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Design and Control of Power Converters 2020
Design and Control of Power Converters 2020
Autore de Azpeitia Manuel Arias Pérez
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 electronic resource (188 p.)
Soggetto topico Technology: general issues
Soggetto non controllato soft-switching
Superjunction MOSFET
LLC resonant converter
zero voltage switching
COSS hysteresis
COSS intrinsic energy losses
SiC devices
antiparallel diode
dual active bridge
power electronic transformer
high-frequency transformer
Artificial Neural Networks (ANN)
fault diagnosis
Fast Fourier Transform (FFT)
Multilevel Inverter (MLI)
LabVIEW
magnetics modeling
variable inductor
hysteresis
eddy currents
saturable core
AC/AC conversion
decoupling control
modulation
DC–DC converter
phase shift PWM
ZVS
inrush current
MOSFET
telecom server
modular multilevel converter (MMC)
total harmonic distortion (THD)
universal mathematical model (UMM)
switching state
nearest level modulation (NLM)
DC-DC converter
IGBT
averaged model
electrothermal model
SPICE
power electronics
converter control
power factor correction
total harmonic distortion
flyback
solid-state lighting
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557326903321
de Azpeitia Manuel Arias Pérez  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Latest Advances in Electrothermal Models
Latest Advances in Electrothermal Models
Autore Górecki Krzysztof
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 electronic resource (140 p.)
Soggetto topico History of engineering & technology
Soggetto non controllato Dual-Phase-Lag heat transfer model
thermal simulation algorithm
thermal measurements
Finite Difference Method scheme
Grünwald–Letnikov fractional derivative
Krylov subspace-based model order reduction
algorithm efficiency analysis
relative error analysis
algorithm convergence analysis
computational complexity analysis
finite difference method scheme
BJT
modelling
self-heating
silicon carbide
SPICE
IGBT
DC–DC converter
electrothermal model
averaged model
thermal phenomena
diode–transistor switch
power electronics
multi-LED lighting modules
device thermal coupling
compact thermal models
temperature sensors
microprocessor
throughput improvement
inductors
ferromagnetic cores
thermal model
transient thermal impedance
thermal resistance
electrothermal (ET) simulation
finite-element method (FEM)
model-order reduction (MOR)
multicellular power MOSFET
silicon carbide (SiC)
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557401503321
Górecki Krzysztof  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
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The insaulated gate bipolar transistor : IGBT : theory and design / Vinod Kumar Khanna
The insaulated gate bipolar transistor : IGBT : theory and design / Vinod Kumar Khanna
Autore Khanna, Vinod Kumar
Pubbl/distr/stampa Piscataway, NJ : IEEE
Descrizione fisica xix, 627 p. : ill. ; 25 cm
Disciplina 621.3815'282
Soggetto non controllato Transistor IGBT
IGBT
ISBN 978-0-471-23845-4
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-990009571170403321
Khanna, Vinod Kumar  
Piscataway, NJ : IEEE
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Thermal and Electro-thermal System Simulation
Thermal and Electro-thermal System Simulation
Autore Codecasa Lorenzo
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2019
Descrizione fisica 1 electronic resource (222 p.)
Soggetto non controllato thermal interface material
thermal aging
modeling
LED compact thermal models
niobium pentoxide
model-order reduction
ferromagnetic cores
LED digital twin
Cauer RC ladder
in-situ characterization
electronic packages
time domain thermoreflectance
multi-domain compact model
power LEDs
DC–DC converters
structure function
boundary condition independent
electric aircraft
multi-LED
modelling
light emitting diodes
thin film
JEDEC metrics
tool agnostic
power losses
switching
dynamic thermal compact model
thermal transient testing
reliability
thermal transient analysis
thermal simulation
non-destructive testing
IGBT
carbon nanotubes
compact thermal model
power semiconductor devices
SPICE
phosphor light conversion
thermal management
LED luminaire design
design flow
thermal characterization
motor cooling
thermal phenomena
silicone dome
LED
secondary heat path
multi-domain modelling
heating and optical power
transient analysis
thermal testability
thermal conductivity
multiple heat source
ISBN 3-03921-737-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910367745603321
Codecasa Lorenzo  
MDPI - Multidisciplinary Digital Publishing Institute, 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Wide Bandgap Based Devices : Design, Fabrication and Applications
Wide Bandgap Based Devices : Design, Fabrication and Applications
Autore Medjdoub Farid
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 electronic resource (242 p.)
Soggetto topico Technology: general issues
Soggetto non controllato GaN
high-electron-mobility transistor (HEMT)
ultra-wide band gap
GaN-based vertical-cavity surface-emitting laser (VCSEL)
composition-graded AlxGa1−xN electron blocking layer (EBL)
electron leakage
GaN laser diode
distributed feedback (DFB)
surface gratings
sidewall gratings
AlGaN/GaN
proton irradiation
time-dependent dielectric breakdown (TDDB)
reliability
normally off
power cycle test
SiC micro-heater chip
direct bonded copper (DBC) substrate
Ag sinter paste
wide band-gap (WBG)
thermal resistance
amorphous InGaZnO
thin-film transistor
nitrogen-doping
buried-channel
stability
4H-SiC
turn-off loss
ON-state voltage
breakdown voltage (BV)
IGBT
wide-bandgap semiconductor
high electron mobility transistors
vertical gate structure
normally-off operation
gallium nitride
asymmetric multiple quantum wells
barrier thickness
InGaN laser diodes
optical absorption loss
electron leakage current
wide band gap semiconductors
numerical simulation
terahertz Gunn diode
grooved-anode diode
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs)
vertical breakdown voltage
buffer trapping effect
gallium nitride (GaN)
power switching device
active power filter (APF)
power quality (PQ)
metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT)
recessed gate
double barrier
high-electron-mobility transistors
copper metallization
millimeter wave
wide bandgap semiconductors
flexible devices
silver nanoring
silver nanowire
polyol method
cosolvent
tungsten trioxide film
spin coating
optical band gap
morphology
electrochromism
self-align
hierarchical nanostructures
ZnO nanorod/NiO nanosheet
photon extraction efficiency
photonic emitter
wideband
HEMT
power amplifier
jammer system
GaN 5G
high electron mobility transistors (HEMT)
new radio
RF front-end
AESA radars
transmittance
distortions
optimization
GaN-on-GaN
schottky barrier diodes
high-energy α-particle detection
low voltage
thick depletion width detectors
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Wide Bandgap Based Devices
Record Nr. UNINA-9910557351703321
Medjdoub Farid  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui