Design and Control of Power Converters 2020 |
Autore | de Azpeitia Manuel Arias Pérez |
Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
Descrizione fisica | 1 electronic resource (188 p.) |
Soggetto topico | Technology: general issues |
Soggetto non controllato |
soft-switching
Superjunction MOSFET LLC resonant converter zero voltage switching COSS hysteresis COSS intrinsic energy losses SiC devices antiparallel diode dual active bridge power electronic transformer high-frequency transformer Artificial Neural Networks (ANN) fault diagnosis Fast Fourier Transform (FFT) Multilevel Inverter (MLI) LabVIEW magnetics modeling variable inductor hysteresis eddy currents saturable core AC/AC conversion decoupling control modulation DC–DC converter phase shift PWM ZVS inrush current MOSFET telecom server modular multilevel converter (MMC) total harmonic distortion (THD) universal mathematical model (UMM) switching state nearest level modulation (NLM) DC-DC converter IGBT averaged model electrothermal model SPICE power electronics converter control power factor correction total harmonic distortion flyback solid-state lighting |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910557326903321 |
de Azpeitia Manuel Arias Pérez | ||
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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Latest Advances in Electrothermal Models |
Autore | Górecki Krzysztof |
Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
Descrizione fisica | 1 electronic resource (140 p.) |
Soggetto topico | History of engineering & technology |
Soggetto non controllato |
Dual-Phase-Lag heat transfer model
thermal simulation algorithm thermal measurements Finite Difference Method scheme Grünwald–Letnikov fractional derivative Krylov subspace-based model order reduction algorithm efficiency analysis relative error analysis algorithm convergence analysis computational complexity analysis finite difference method scheme BJT modelling self-heating silicon carbide SPICE IGBT DC–DC converter electrothermal model averaged model thermal phenomena diode–transistor switch power electronics multi-LED lighting modules device thermal coupling compact thermal models temperature sensors microprocessor throughput improvement inductors ferromagnetic cores thermal model transient thermal impedance thermal resistance electrothermal (ET) simulation finite-element method (FEM) model-order reduction (MOR) multicellular power MOSFET silicon carbide (SiC) |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910557401503321 |
Górecki Krzysztof | ||
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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The insaulated gate bipolar transistor : IGBT : theory and design / Vinod Kumar Khanna |
Autore | Khanna, Vinod Kumar |
Pubbl/distr/stampa | Piscataway, NJ : IEEE |
Descrizione fisica | xix, 627 p. : ill. ; 25 cm |
Disciplina | 621.3815'282 |
Soggetto non controllato |
Transistor IGBT
IGBT |
ISBN | 978-0-471-23845-4 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-990009571170403321 |
Khanna, Vinod Kumar | ||
Piscataway, NJ : IEEE | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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Thermal and Electro-thermal System Simulation |
Autore | Codecasa Lorenzo |
Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
Descrizione fisica | 1 electronic resource (222 p.) |
Soggetto non controllato |
thermal interface material
thermal aging modeling LED compact thermal models niobium pentoxide model-order reduction ferromagnetic cores LED digital twin Cauer RC ladder in-situ characterization electronic packages time domain thermoreflectance multi-domain compact model power LEDs DC–DC converters structure function boundary condition independent electric aircraft multi-LED modelling light emitting diodes thin film JEDEC metrics tool agnostic power losses switching dynamic thermal compact model thermal transient testing reliability thermal transient analysis thermal simulation non-destructive testing IGBT carbon nanotubes compact thermal model power semiconductor devices SPICE phosphor light conversion thermal management LED luminaire design design flow thermal characterization motor cooling thermal phenomena silicone dome LED secondary heat path multi-domain modelling heating and optical power transient analysis thermal testability thermal conductivity multiple heat source |
ISBN | 3-03921-737-2 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910367745603321 |
Codecasa Lorenzo | ||
MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices : Design, Fabrication and Applications |
Autore | Medjdoub Farid |
Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
Descrizione fisica | 1 electronic resource (242 p.) |
Soggetto topico | Technology: general issues |
Soggetto non controllato |
GaN
high-electron-mobility transistor (HEMT) ultra-wide band gap GaN-based vertical-cavity surface-emitting laser (VCSEL) composition-graded AlxGa1−xN electron blocking layer (EBL) electron leakage GaN laser diode distributed feedback (DFB) surface gratings sidewall gratings AlGaN/GaN proton irradiation time-dependent dielectric breakdown (TDDB) reliability normally off power cycle test SiC micro-heater chip direct bonded copper (DBC) substrate Ag sinter paste wide band-gap (WBG) thermal resistance amorphous InGaZnO thin-film transistor nitrogen-doping buried-channel stability 4H-SiC turn-off loss ON-state voltage breakdown voltage (BV) IGBT wide-bandgap semiconductor high electron mobility transistors vertical gate structure normally-off operation gallium nitride asymmetric multiple quantum wells barrier thickness InGaN laser diodes optical absorption loss electron leakage current wide band gap semiconductors numerical simulation terahertz Gunn diode grooved-anode diode Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) vertical breakdown voltage buffer trapping effect gallium nitride (GaN) power switching device active power filter (APF) power quality (PQ) metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) recessed gate double barrier high-electron-mobility transistors copper metallization millimeter wave wide bandgap semiconductors flexible devices silver nanoring silver nanowire polyol method cosolvent tungsten trioxide film spin coating optical band gap morphology electrochromism self-align hierarchical nanostructures ZnO nanorod/NiO nanosheet photon extraction efficiency photonic emitter wideband HEMT power amplifier jammer system GaN 5G high electron mobility transistors (HEMT) new radio RF front-end AESA radars transmittance distortions optimization GaN-on-GaN schottky barrier diodes high-energy α-particle detection low voltage thick depletion width detectors |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Altri titoli varianti | Wide Bandgap Based Devices |
Record Nr. | UNINA-9910557351703321 |
Medjdoub Farid | ||
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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