Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors : Doctoral Thesis accepted by the Peking University, Beijing, China / Mengqi Fu
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| Autore: |
Fu, Mengqi
|
| Titolo: |
Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors : Doctoral Thesis accepted by the Peking University, Beijing, China / Mengqi Fu
|
| Pubblicazione: | Singapore, : Springer, 2018 |
| Titolo uniforme: | Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors |
| Descrizione fisica: | xv, 102 p. : ill. ; 24 cm |
| Soggetto topico: | 82-XX - Statistical mechanics, structure of matter [MSC 2020] |
| 78-XX - Optics, electromagnetic theory [MSC 2020] | |
| 00A79 (77-XX) - Physics [MSC 2020] | |
| Soggetto non controllato: | Crystal orientation |
| Crystal phase | |
| Electrical properties | |
| Electron microscope | |
| Field-effect transistors | |
| Growth methods | |
| In-situ material characterization | |
| InAs nanowires | |
| Indium Arsenide | |
| MBE and MOCVD | |
| Ultrathin nanowires | |
| Titolo autorizzato: | Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | VAN0212110 |
| Lo trovi qui: | Univ. Vanvitelli |
| Localizzazioni e accesso elettronico | http://doi.org/10.1007/978-981-13-3444-3 |
| Opac: | Controlla la disponibilità qui |
Serie:
Springer theses : recognizing outstanding Ph.D. research Berlin . -Springer , 2010-