Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets : Doctoral Thesis accepted by The Complutense University of Madrid, Spain / María Ángela Pampillón Arce |
Autore | Pampillón Arce, María Á. |
Pubbl/distr/stampa | Cham, : Springer, 2017 |
Descrizione fisica | xxiii, 164 p. : ill. ; 24 cm |
Soggetto topico |
00A79 (77-XX) - Physics [MSC 2020]
74K35 - Thin films [MSC 2020] 74A50 - Structured surfaces and interfaces, coexistent phases [MSC 2020] |
Soggetto non controllato |
Gadolinium Oxide
Gadolinium Scandate High Permittivity Dielectrics High Pressure Sputtering InP Substrates MIS Devices MOSFET Plasma Oxidation Scandium Oxide Scavenging Effect |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Titolo uniforme | |
Record Nr. | UNICAMPANIA-VAN0187568 |
Pampillón Arce, María Á. | ||
Cham, : Springer, 2017 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Vanvitelli | ||
|
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets : Doctoral Thesis accepted by The Complutense University of Madrid, Spain / María Ángela Pampillón Arce |
Autore | Pampillón Arce, María Á. |
Pubbl/distr/stampa | Cham, : Springer, 2017 |
Descrizione fisica | xxiii, 164 p. : ill. ; 24 cm |
Soggetto topico |
00A79 (77-XX) - Physics [MSC 2020]
74A50 - Structured surfaces and interfaces, coexistent phases [MSC 2020] 74K35 - Thin films [MSC 2020] |
Soggetto non controllato |
Gadolinium Oxide
Gadolinium Scandate High Permittivity Dielectrics High Pressure Sputtering InP Substrates MIS Devices MOSFET Plasma Oxidation Scandium Oxide Scavenging Effect |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Titolo uniforme | |
Record Nr. | UNICAMPANIA-VAN00187568 |
Pampillón Arce, María Á. | ||
Cham, : Springer, 2017 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Vanvitelli | ||
|