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Advanced DC-DC Power Converters and Switching Converters
| Advanced DC-DC Power Converters and Switching Converters |
| Autore | Musumeci Salvatore |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (188 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
interleaved operation
three-winding coupled inductor high step-up DC–DC converter DC/DC converter multi-input-port bidirectional energy storage three-phase bidirectional isolated DC-DC converter burst-mode switching high-frequency transformer configurations phase-shift modulation intermittent switching three-phase dual-active bridge bidirectional converter high efficiency GaN SiC buck-boost converter high switching frequency electric vehicle (EV) fast charging interleaved dc–dc converter SiC devices Si devices Component Connection Method power electronics-based systems stability analysis state-space methods virtual synchronous generators DC-DC converters photovoltaics single-diode model state-space multi-port dual-active bridge (DAB) converter wide-band-gap (WBG) semiconductors silicon carbide (SiC) MOSFETs power converter automotive battery charger circuit modelling power electronics SiC MOSFET |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557117103321 |
Musumeci Salvatore
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Feature Papers in Electronic Materials Section
| Feature Papers in Electronic Materials Section |
| Autore | Roccaforte Fabrizio |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (438 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology Energy industries & utilities |
| Soggetto non controllato |
vertical GaN
quasi-vertical GaN reliability trapping degradation MOS trench MOS threshold voltage nanomanufacturing high-throughput method material printing flexible bioelectronics nanomembrane hybrid integration GaAs InGaAs channel epitaxial lift-off HEMT van der Waals 3C-SiC stacking faults doping KOH etching silicon carbide radiation hardness proton and electron irradiation charge removal rate compensation irradiation temperature heteroepitaxy bulk growth compliant substrates defects stress cubic silicon carbide power electronics thin film iron-based superconductor pulsed laser deposition transmission electron microscopy diamond MPCVD growth electron microscopy chemical vapour deposition 2D materials MoS2 silica point defects optical fibers radiation effects 4H-SiC ohmic contact SIMS Ti3SiC2 simulation Schottky barrier Schottky diodes electrical characterization graphene absorption Fabry–Perot filter radio frequency sputtering CVD graphene GaN thermal management GaN-on-diamond CVD arrhythmia detection cardiovascular monitoring soft biosensors wearable sensors flexible electronics gate dielectric aluminum oxide interface traps instability insulators binary oxides high-κ dielectrics wide band gap semiconductors energy electronics ultra-wide bandgap diodes transistors gallium oxide Ga2O3 spinel ZnGa2O4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557620303321 |
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Roccaforte Fabrizio
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Micro- and Nanotechnology of Wide Bandgap Semiconductors
| Micro- and Nanotechnology of Wide Bandgap Semiconductors |
| Autore | Piotrowska Anna B |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (114 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
GaN HEMT
self-heating effect microwave power amplifier thermal impedance thermal time constant thermal equivalent circuit GaN crystal growth ammonothermal method HVPE ion implantation gallium nitride thermodynamics ultra-high-pressure annealing diffusion diffusion coefficients molecular beam epitaxy nitrides laser diode tunnel junction LTE AlN AlGaN/GaN interface state density conductance-frequency MISHEMT gallium nitride nanowires polarity Kelvin probe force microscopy selective area growth selective epitaxy AlGaN/GaN heterostructures edge effects effective diffusion length MOVPE nanowires AlGaN LEDs growth polarity |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557343303321 |
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Piotrowska Anna B
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (352 p.) |
| Soggetto topico |
Research & information: general
Mathematics & science |
| Soggetto non controllato |
FinFETs
CMOS device processing integrated circuits silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) solid state circuit breaker (SSCB) prototype circuit design GaN HEMT high gate multi-recessed buffer power density power-added efficiency 4H-SiC MESFET IMRD structure power added efficiency 1200 V SiC MOSFET body diode surge reliability silvaco simulation floating gate transistor control gate CMOS device active noise control vacuum channel mean free path vertical air-channel diode vertical transistor field emission particle trajectory model F-N plot space-charge-limited currents 4H-SiC MESFET simulation power added efficiency (PAE) new device three-input transistor T-channel compact circuit style CMOS compatible technology avalanche photodiode SPICE model bandwidth high responsivity silicon photodiode AlGaN/GaN HEMTs thermal simulation transient channel temperature pulse width gate structures band-to-band tunnelling (BTBT) tunnelling field-effect transistor (TFET) germanium-around-source gate-all-around TFET (GAS GAA TFET) average subthreshold swing direct source-to-drain tunneling transport effective mass confinement effective mass multi-subband ensemble Monte Carlo non-equilibrium Green's function DGSOI FinFET core-insulator gate-all-around field effect transistor GAA nanowire one-transistor dynamic random-access memory (1T-DRAM) polysilicon grain boundary electron trapping flexible transistors polymers metal oxides nanocomposites dielectrics active layers nanotransistor quantum transport Landauer-Büttiker formalism R-matrix method nanoscale mosfet quantum current surface transfer doping 2D hole gas (2DHG) diamond MoO3 V2O5 MOSFET reliability random telegraph noise oxide defects SiO2 split-gate trench power MOSFET multiple epitaxial layers specific on-resistance device reliability nanoscale transistor bias temperature instabilities (BTI) defects single-defect spectroscopy non-radiative multiphonon (NMP) model time-dependent defect spectroscopy |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
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Filipovic Lado
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanostructured Light-Emitters
| Nanostructured Light-Emitters |
| Autore | Nguyen Hieu Pham Trung |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (208 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
Liquid phase deposition method
InGaN/GaN light-emitting diode silver nanoparticle zinc oxide localized surface plasmon β-Ga2O3 III-Nitrides monoclinic hexagonal arrangement high-power current distribution vertical structure LED blue organic light emitting diodes transport materials host-dopant nanoparticles luminescence non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals photoluminescence properties tunable fluorescence emission one-pot approach perovskite light-emitting diodes three-step spin coating hole transport layer PEDOT:PSS/MoO3-ammonia composite μLED displays μLEDs GaN nanowires core-shell structure ultraviolet (UV) emitter surface plasmon Pt nanoparticles hole-pattern photon emission efficiency distributed Bragg reflectors gratings GaN-based lasers linewidth epsilon-near-zero wideband absorber plasmon mode Brewster mode visible light communication photonic crystals flip-chip LED Purcell effect light extraction efficiency nanostructured materials surface/interface properties nanostructured light-emitting devices physical mechanism surface/interface modification surface/interface control micro-scale light emitting diode sapphire substrate encapsulation compound semiconductor nanostructure ultraviolet light-emitting diode (LED) molecular beam epitaxy GaN AlN photonic nanojet photonic nanojet array self-assembly template-assisted self-assembly patterning efficiency III-nitride thin film nanostructures ultraviolet emitters surface passivation luminescence intensity |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557105503321 |
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Nguyen Hieu Pham Trung
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Optoelectronic Nanodevices
| Optoelectronic Nanodevices |
| Autore | Stylianakis Minas M |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (338 p.) |
| Soggetto non controllato |
graphene oxide
textured silicon solar cells high-efficiency CdTe microdots piezo-phototronic effect electromagnetically induced transparency effect waveguide photons light output power hole injection ternary organic solar cells UV LEDs cathodoluminescence V-pits quantum confinement effect nano-grating metamaterials Ga2O3 tunneling transmittance graphene ink perovskite solar cells counter electrode nucleation layer Ag film AlGaN-based ultraviolet light-emitting diode color-conversion efficiency PeLEDs photoelectric performance photocurrent charge transfer double-layer ITO green LED liquid crystals photovoltaics electrowetting oxidation Fowler-Nordheim field emission excitation wavelength functionalization quantum dots gold split-ring cascade effect erbium transparent conductive electrode compact plasmon resonance air-processed FDTD prism-structured sidewall sheet resistance GaN Ti porous film stability flip-chip mini-LED flexible substrate actively tunable nanodevices green LEDs metasurfaces antireflective coating (ARC) NiCo2S4 nanotubes InN/p-GaN heterojunction InGaN/GaN superlattice OAB graded indium composition plasmonics polymer composites photomultiplication cold cathode solvent solar cells controllable synthesis tunable absorbers interface graphene silicon transistor colorimetry light extraction reduced graphene oxide pinhole pattern indium nanoparticles (In NPs) graphene split-ring organic solar cell light-emitting diode organic plasmonic forward scattering smooth subwavelength metal grating perovskite photoluminescence mid infrared polarization analyzer transparent electrode external quantum efficiency LED light-emitting diodes photodetector p-type InGaN quantum efficiency 2D perovskite quantum dot orthogonal polarization current spreading localized surface plasmon Schottky barrier |
| ISBN | 3-03928-697-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910404090103321 |
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Stylianakis Minas M
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| MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Reliability Analysis of Electrotechnical Devices
| Reliability Analysis of Electrotechnical Devices |
| Autore | Tan Cher Ming |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (174 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology |
| Soggetto non controllato |
3D-IC (three-dimensional integrated circuit)
electromagnetic interference near field measurement SAC305 BGA low temperature fracture failure factorial design of experiment genetic algorithm optimization return loss multiple-input multiple-output (MIMO) single event effects linear energy transfer Monte Carlo simulation radiation hardness pressureless sintered micron silver joints deep space environment extreme thermal shocks reconstruction simulation elastic mechanical properties state of health remaining useful life electrochemistry based electrical model semi-empirical capacity fading model useful life distribution quality and reliability assurance single event effect microdosimetry lineal energy deconvolution gamma process lifetime measurement system analysis reliability estimation GaN operational amplifier proton therapy prompt gamma imaging 3D X-ray bias temperature-humidity reliability test conductive anodic filament (CAF) de-penalization finite element analysis |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910585945603321 |
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Tan Cher Ming
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices : Design, Fabrication and Applications
| Wide Bandgap Based Devices : Design, Fabrication and Applications |
| Autore | Medjdoub Farid |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (242 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
GaN
high-electron-mobility transistor (HEMT) ultra-wide band gap GaN-based vertical-cavity surface-emitting laser (VCSEL) composition-graded AlxGa1−xN electron blocking layer (EBL) electron leakage GaN laser diode distributed feedback (DFB) surface gratings sidewall gratings AlGaN/GaN proton irradiation time-dependent dielectric breakdown (TDDB) reliability normally off power cycle test SiC micro-heater chip direct bonded copper (DBC) substrate Ag sinter paste wide band-gap (WBG) thermal resistance amorphous InGaZnO thin-film transistor nitrogen-doping buried-channel stability 4H-SiC turn-off loss ON-state voltage breakdown voltage (BV) IGBT wide-bandgap semiconductor high electron mobility transistors vertical gate structure normally-off operation gallium nitride asymmetric multiple quantum wells barrier thickness InGaN laser diodes optical absorption loss electron leakage current wide band gap semiconductors numerical simulation terahertz Gunn diode grooved-anode diode Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) vertical breakdown voltage buffer trapping effect gallium nitride (GaN) power switching device active power filter (APF) power quality (PQ) metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) recessed gate double barrier high-electron-mobility transistors copper metallization millimeter wave wide bandgap semiconductors flexible devices silver nanoring silver nanowire polyol method cosolvent tungsten trioxide film spin coating optical band gap morphology electrochromism self-align hierarchical nanostructures ZnO nanorod/NiO nanosheet photon extraction efficiency photonic emitter wideband HEMT power amplifier jammer system GaN 5G high electron mobility transistors (HEMT) new radio RF front-end AESA radars transmittance distortions optimization GaN-on-GaN schottky barrier diodes high-energy α-particle detection low voltage thick depletion width detectors |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910557351703321 |
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Medjdoub Farid
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
| Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II |
| Autore | Verzellesi Giovanni |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (320 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology Energy industries & utilities |
| Soggetto non controllato |
energy storage system
power conditioning system silicon carbide vanadium redox flow batteries AlGaN/GaN SiC high electron mobility transistor Schottky barrier diode breakdown field noise charge traps radio frequency wide-bandgap (WBG) gallium nitride (GaN) silicon carbide (SiC) high electron mobility transistor (HEMT) metal-oxide-semiconductor field effect transistor (MOSFET) driving technology nickel oxide annealing temperature crystallite size optical band gap electrochromic device indium oxide thin film solution method plasma surface treatment bias stability aluminum nitride Schottky barrier diodes radio frequency sputtering X-ray diffraction X-ray photoelectron spectroscopy piezoelectric micromachined ultrasonic transducers ranging time of flight (TOF) time to digital converter circuit (TDC) AlGaN/GaN heterojunction p-GaN gate unidirectional operation rectifying electrode first-principles density functional theory pure β-Ga2O3 Sr-doped β-Ga2O3 p-type doping band structure density of states optical absorption AlN buffer layer NH3 growth interruption strain relaxation GaN-based LED low defect density gate bias modulation palladium catalyst gallium nitride nitrogen dioxide gas sensor laser micromachining sapphire AlGaN/GaN heterostructures high-electron mobility devices p-GaN gate HEMT normally off low-resistance SiC substrate temperature high electron-mobility transistor (HEMT) equivalent-circuit modeling microwave frequency scattering-parameter measurements GaN MIS-HEMTs fabrication threshold voltage stability supercritical technology GaN power HEMTs breakdown voltage current collapse compensation ratio auto-compensation carbon doping HVPE AlN high-temperature buffer layer nitridation high-electron mobility transistor heterogeneous integration SOI QST crystal growth cubic and hexagonal structure blue and yellow luminescence electron lifetime wafer dicing stealth dicing laser thermal separation dry processing laser processing wide bandgap semiconductor photovoltaic module digital signal processor synchronous buck converter polar semi-polar non-polar magnetron sputtering HTA GaN-HEMT mesa structures 2DEG X-ray sensor X-ray imaging |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910576886103321 |
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Verzellesi Giovanni
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Semiconductor Based Micro/Nano Devices
| Wide Bandgap Semiconductor Based Micro/Nano Devices |
| Autore | Seo Jung-Hun |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto non controllato |
ohmic contact
MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I-V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) |
| ISBN | 3-03897-843-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346846903321 |
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Seo Jung-Hun
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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