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Advanced DC-DC Power Converters and Switching Converters
| Advanced DC-DC Power Converters and Switching Converters |
| Autore | Musumeci Salvatore |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (188 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
automotive
battery charger bidirectional bidirectional converter buck-boost converter burst-mode switching circuit modelling Component Connection Method DC-DC converters DC/DC converter electric vehicle (EV) energy storage fast charging GaN high efficiency high step-up DC-DC converter high switching frequency high-frequency transformer configurations interleaved dc-dc converter interleaved operation intermittent switching multi-input-port multi-port dual-active bridge (DAB) converter phase-shift modulation photovoltaics power converter power electronics power electronics-based systems Si devices SiC SiC devices SiC MOSFET silicon carbide (SiC) MOSFETs single-diode model stability analysis state-space state-space methods three-phase bidirectional isolated DC-DC converter three-phase dual-active bridge three-winding coupled inductor virtual synchronous generators wide-band-gap (WBG) semiconductors |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557117103321 |
Musumeci Salvatore
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Feature Papers in Electronic Materials Section
| Feature Papers in Electronic Materials Section |
| Autore | Roccaforte Fabrizio |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (438 p.) |
| Soggetto topico |
Energy industries and utilities
History of engineering and technology Technology: general issues |
| Soggetto non controllato |
2D materials
3C-SiC 4H-SiC aluminum oxide arrhythmia detection binary oxides bulk growth cardiovascular monitoring charge removal rate chemical vapour deposition compensation compliant substrates cubic silicon carbide CVD CVD graphene defects degradation diamond diodes doping electrical characterization electron microscopy energy electronics epitaxial lift-off Fabry-Perot filter flexible bioelectronics flexible electronics Ga2O3 GaAs gallium oxide GaN GaN-on-diamond gate dielectric graphene absorption HEMT heteroepitaxy high-throughput method high-κ dielectrics hybrid integration InGaAs channel instability insulators interface iron-based superconductor irradiation temperature KOH etching material printing MOS MoS2 MPCVD growth nanomanufacturing nanomembrane ohmic contact optical fibers power electronics proton and electron irradiation pulsed laser deposition quasi-vertical GaN radiation effects radiation hardness radio frequency sputtering reliability Schottky barrier Schottky diodes silica point defects silicon carbide SIMS simulation soft biosensors spinel stacking faults stress thermal management thin film threshold voltage Ti3SiC2 transistors transmission electron microscopy trapping traps trench MOS ultra-wide bandgap van der Waals vertical GaN wearable sensors wide band gap semiconductors ZnGa2O4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557620303321 |
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Roccaforte Fabrizio
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Micro- and Nanotechnology of Wide Bandgap Semiconductors
| Micro- and Nanotechnology of Wide Bandgap Semiconductors |
| Autore | Piotrowska Anna B |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (114 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
AlGaN
AlGaN/GaN AlGaN/GaN heterostructures AlN ammonothermal method conductance-frequency crystal growth diffusion diffusion coefficients edge effects effective diffusion length gallium nitride gallium nitride nanowires GaN GaN HEMT growth polarity HVPE interface state density ion implantation Kelvin probe force microscopy laser diode LEDs LTE microwave power amplifier MISHEMT molecular beam epitaxy MOVPE n/a nanowires nitrides polarity selective area growth selective epitaxy self-heating effect thermal equivalent circuit thermal impedance thermal time constant thermodynamics tunnel junction ultra-high-pressure annealing |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557343303321 |
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Piotrowska Anna B
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (352 p.) |
| Soggetto topico |
Mathematics & science
Research & information: general |
| Soggetto non controllato |
1200 V SiC MOSFET
2D hole gas (2DHG) 4H-SiC 4H-SiC MESFET active layers active noise control AlGaN/GaN HEMTs avalanche photodiode average subthreshold swing band-to-band tunnelling (BTBT) bandwidth bias temperature instabilities (BTI) body diode circuit design CMOS CMOS compatible technology CMOS device compact circuit style confinement effective mass control gate core-insulator defects device processing device reliability DGSOI diamond dielectrics direct source-to-drain tunneling electron trapping F-N plot field effect transistor field emission FinFET FinFETs flexible transistors floating gate transistor GAA GaN gate structures gate-all-around germanium-around-source gate-all-around TFET (GAS GAA TFET) grain boundary HEMT high gate high responsivity IMRD structure integrated circuits Landauer-Büttiker formalism mean free path MESFET metal oxides MoO3 mosfet MOSFET multi-recessed buffer multi-subband ensemble Monte Carlo multiple epitaxial layers n/a nanocomposites nanoscale nanoscale transistor nanotransistor nanowire new device non-equilibrium Green's function non-radiative multiphonon (NMP) model one-transistor dynamic random-access memory (1T-DRAM) oxide defects particle trajectory model polymers polysilicon power added efficiency power added efficiency (PAE) power density power-added efficiency prototype pulse width quantum current quantum transport R-matrix method random telegraph noise reliability silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) silicon photodiode silvaco simulation simulation single-defect spectroscopy SiO2 solid state circuit breaker (SSCB) space-charge-limited currents specific on-resistance SPICE model split-gate trench power MOSFET surface transfer doping surge reliability T-channel thermal simulation three-input transistor time-dependent defect spectroscopy transient channel temperature transport effective mass tunnelling field-effect transistor (TFET) V2O5 vacuum channel vertical air-channel diode vertical transistor |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
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Filipovic Lado
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanostructured Light-Emitters
| Nanostructured Light-Emitters |
| Autore | Nguyen Hieu Pham Trung |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 online resource (208 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
AlN
blue organic light emitting diodes Brewster mode compound semiconductor core-shell structure current distribution distributed Bragg reflectors encapsulation epsilon-near-zero flip-chip LED GaN GaN nanowires GaN-based lasers gratings hexagonal arrangement high-power hole transport layer hole-pattern host-dopant III-nitride thin film III-Nitrides InGaN/GaN light-emitting diode light extraction efficiency light-emitting diode (LED) linewidth Liquid phase deposition method localized surface plasmon luminescence luminescence intensity micro-scale light emitting diode molecular beam epitaxy monoclinic n/a nanoparticles nanostructure nanostructured light-emitting devices nanostructured materials nanostructures non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals one-pot approach patterning efficiency PEDOT:PSS/MoO3-ammonia composite perovskite light-emitting diodes photoluminescence properties photon emission efficiency photonic crystals photonic nanojet photonic nanojet array physical mechanism plasmon mode Pt nanoparticles Purcell effect sapphire substrate self-assembly silver nanoparticle surface passivation surface plasmon surface/interface control surface/interface modification surface/interface properties template-assisted self-assembly three-step spin coating transport materials tunable fluorescence emission ultraviolet ultraviolet (UV) emitter ultraviolet emitters vertical structure LED visible light communication wideband absorber zinc oxide β-Ga2O3 μLED displays μLEDs |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557105503321 |
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Nguyen Hieu Pham Trung
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Optoelectronic Nanodevices
| Optoelectronic Nanodevices |
| Autore | Stylianakis Minas M |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 online resource (338 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
2D perovskite
actively tunable nanodevices Ag film air-processed AlGaN-based ultraviolet light-emitting diode antireflective coating (ARC) cascade effect cathodoluminescence CdTe microdots charge transfer cold cathode color-conversion efficiency colorimetry compact controllable synthesis counter electrode current spreading double-layer ITO electromagnetically induced transparency effect electrowetting erbium excitation wavelength external quantum efficiency FDTD field emission flexible substrate flip-chip mini-LED Fowler-Nordheim functionalization Ga2O3 GaN gold split-ring graded indium composition graphene graphene ink graphene oxide graphene split-ring green LED green LEDs high-efficiency hole injection indium nanoparticles (In NPs) InGaN/GaN superlattice InN/p-GaN heterojunction interface LED light extraction light output power light-emitting diode light-emitting diodes liquid crystals localized surface plasmon metamaterials metasurfaces mid infrared n/a nano-grating NiCo2S4 nanotubes nucleation layer OAB organic organic solar cell orthogonal polarization oxidation p-type InGaN PeLEDs perovskite perovskite solar cells photocurrent photodetector photoelectric performance photoluminescence photomultiplication photovoltaics piezo-phototronic effect pinhole pattern plasmon resonance plasmonic forward scattering plasmonics polarization analyzer polymer composites prism-structured sidewall quantum confinement effect quantum dot quantum dots quantum efficiency reduced graphene oxide Schottky barrier sheet resistance silicon transistor smooth solar cells solvent stability subwavelength metal grating ternary organic solar cells textured silicon solar cells Ti porous film transmittance transparent conductive electrode transparent electrode tunable absorbers tunneling UV LEDs V-pits waveguide photons |
| ISBN | 3-03928-697-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910404090103321 |
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Stylianakis Minas M
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| MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Recent Advances in III-Nitride Semiconductors
| Recent Advances in III-Nitride Semiconductors |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2023 |
| Descrizione fisica | 1 online resource (236 p.) |
| Soggetto topico |
History of engineering & technology
Technology: general issues |
| Soggetto non controllato |
AlGaN
electro-optics devices epitaxy GaN heterostructures InGaN micro-electronics devices Nitrides photonic crystal and plasmonics photonic crystal enhanced light-matter interaction power devices tunable devices |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910743270503321 |
| MDPI - Multidisciplinary Digital Publishing Institute, 2023 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Reliability Analysis of Electrotechnical Devices
| Reliability Analysis of Electrotechnical Devices |
| Autore | Tan Cher Ming |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (174 p.) |
| Soggetto topico |
History of engineering & technology
Technology: general issues |
| Soggetto non controllato |
3D X-ray
3D-IC (three-dimensional integrated circuit) BGA bias temperature-humidity reliability test conductive anodic filament (CAF) de-penalization deconvolution deep space environment elastic mechanical properties electrochemistry based electrical model electromagnetic interference extreme thermal shocks factorial design of experiment finite element analysis fracture failure gamma process GaN genetic algorithm optimization lifetime lineal energy linear energy transfer low temperature measurement system analysis microdosimetry Monte Carlo simulation multiple-input multiple-output (MIMO) n/a near field measurement operational amplifier pressureless sintered micron silver joints prompt gamma imaging proton therapy quality and reliability assurance radiation hardness reconstruction reliability estimation remaining useful life return loss SAC305 semi-empirical capacity fading model simulation single event effect single event effects state of health useful life distribution |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910585945603321 |
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Tan Cher Ming
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices : Design, Fabrication and Applications
| Wide Bandgap Based Devices : Design, Fabrication and Applications |
| Autore | Medjdoub Farid |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (242 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
4H-SiC
active power filter (APF) AESA radars Ag sinter paste AlGaN/GaN amorphous InGaZnO asymmetric multiple quantum wells barrier thickness breakdown voltage (BV) buffer trapping effect buried-channel composition-graded AlxGa1−xN electron blocking layer (EBL) copper metallization cosolvent direct bonded copper (DBC) substrate distortions distributed feedback (DFB) double barrier electrochromism electron leakage electron leakage current flexible devices gallium nitride gallium nitride (GaN) Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) GaN GaN 5G GaN laser diode GaN-based vertical-cavity surface-emitting laser (VCSEL) GaN-on-GaN grooved-anode diode HEMT hierarchical nanostructures high electron mobility transistors high electron mobility transistors (HEMT) high-electron-mobility transistor (HEMT) high-electron-mobility transistors high-energy α-particle detection IGBT InGaN laser diodes jammer system low voltage metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) millimeter wave morphology n/a new radio nitrogen-doping normally off normally-off operation numerical simulation ON-state voltage optical absorption loss optical band gap optimization photon extraction efficiency photonic emitter polyol method power amplifier power cycle test power quality (PQ) power switching device proton irradiation recessed gate reliability RF front-end schottky barrier diodes self-align SiC micro-heater chip sidewall gratings silver nanoring silver nanowire spin coating stability surface gratings terahertz Gunn diode thermal resistance thick depletion width detectors thin-film transistor time-dependent dielectric breakdown (TDDB) transmittance tungsten trioxide film turn-off loss ultra-wide band gap vertical breakdown voltage vertical gate structure wide band gap semiconductors wide band-gap (WBG) wide bandgap semiconductors wide-bandgap semiconductor wideband ZnO nanorod/NiO nanosheet |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910557351703321 |
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Medjdoub Farid
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
| Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II |
| Autore | Verzellesi Giovanni |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (320 p.) |
| Soggetto topico |
Energy industries and utilities
History of engineering and technology Technology: general issues |
| Soggetto non controllato |
2DEG
AlGaN/GaN AlGaN/GaN heterojunction AlGaN/GaN heterostructures AlN AlN buffer layer aluminum nitride annealing temperature auto-compensation band structure bias stability blue and yellow luminescence breakdown field breakdown voltage buffer layer carbon doping charge traps compensation ratio crystal growth crystallite size cubic and hexagonal structure current collapse density functional theory density of states digital signal processor driving technology dry processing electrochromic device electron lifetime energy storage system equivalent-circuit modeling fabrication first-principles gallium nitride gallium nitride (GaN) GaN GaN power HEMTs GaN-based LED GaN-HEMT mesa structures gate bias modulation heterogeneous integration high electron mobility transistor high electron mobility transistor (HEMT) high electron-mobility transistor (HEMT) high-electron mobility devices high-electron mobility transistor high-temperature HTA HVPE indium oxide thin film laser micromachining laser processing laser thermal separation low defect density low-resistance SiC substrate magnetron sputtering metal-oxide-semiconductor field effect transistor (MOSFET) microwave frequency MIS-HEMTs n/a NH3 growth interruption nickel oxide nitridation nitrogen dioxide gas sensor noise non-polar normally off optical absorption optical band gap p-GaN gate p-GaN gate HEMT p-type doping palladium catalyst photovoltaic module piezoelectric micromachined ultrasonic transducers plasma surface treatment polar power conditioning system pure β-Ga2O3 QST radio frequency radio frequency sputtering ranging rectifying electrode sapphire scattering-parameter measurements Schottky barrier diode Schottky barrier diodes semi-polar SiC silicon carbide silicon carbide (SiC) SOI solution method Sr-doped β-Ga2O3 stealth dicing strain relaxation supercritical technology synchronous buck converter temperature threshold voltage stability time of flight (TOF) time to digital converter circuit (TDC) unidirectional operation vanadium redox flow batteries wafer dicing wide bandgap semiconductor wide-bandgap (WBG) X-ray diffraction X-ray imaging X-ray photoelectron spectroscopy X-ray sensor |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910576886103321 |
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Verzellesi Giovanni
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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