Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (352 p.) |
| Soggetto topico |
Mathematics & science
Research & information: general |
| Soggetto non controllato |
1200 V SiC MOSFET
2D hole gas (2DHG) 4H-SiC 4H-SiC MESFET active layers active noise control AlGaN/GaN HEMTs avalanche photodiode average subthreshold swing band-to-band tunnelling (BTBT) bandwidth bias temperature instabilities (BTI) body diode circuit design CMOS CMOS compatible technology CMOS device compact circuit style confinement effective mass control gate core-insulator defects device processing device reliability DGSOI diamond dielectrics direct source-to-drain tunneling electron trapping F-N plot field effect transistor field emission FinFET FinFETs flexible transistors floating gate transistor GAA GaN gate structures gate-all-around germanium-around-source gate-all-around TFET (GAS GAA TFET) grain boundary HEMT high gate high responsivity IMRD structure integrated circuits Landauer-Büttiker formalism mean free path MESFET metal oxides MoO3 mosfet MOSFET multi-recessed buffer multi-subband ensemble Monte Carlo multiple epitaxial layers n/a nanocomposites nanoscale nanoscale transistor nanotransistor nanowire new device non-equilibrium Green's function non-radiative multiphonon (NMP) model one-transistor dynamic random-access memory (1T-DRAM) oxide defects particle trajectory model polymers polysilicon power added efficiency power added efficiency (PAE) power density power-added efficiency prototype pulse width quantum current quantum transport R-matrix method random telegraph noise reliability silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) silicon photodiode silvaco simulation simulation single-defect spectroscopy SiO2 solid state circuit breaker (SSCB) space-charge-limited currents specific on-resistance SPICE model split-gate trench power MOSFET surface transfer doping surge reliability T-channel thermal simulation three-input transistor time-dependent defect spectroscopy transient channel temperature transport effective mass tunnelling field-effect transistor (TFET) V2O5 vacuum channel vertical air-channel diode vertical transistor |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
Filipovic Lado
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon Nanodevices
| Silicon Nanodevices |
| Autore | Radamson Henry |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (238 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
anode
anti-phase boundaries (APBs) arsenate arsenite atomic layer etching (ALE) band-to-band tunneling charge-trap synaptic transistor CVD dark current detectors digital etch doping effect dual-selective wet etching epitaxial grown epitaxial growth Fin etching FinFET germanium GeSn GOI heteroepitaxy HfO2/Si0.7Ge0.3 gate stack HNO3 concentration III-V on Si in-plane nanowire interface state density lasers lithium-ion batteries long-term potentiation (LTP) n/a nanowire-based quantum devices neural network neuromorphic system organotrialkoxysilane ozone oxidation p+-Ge0.8Si0.2/Ge stack passivation pattern recognition photodetectors prussian blue nanoparticles quantum computing quantum dot quasi-atomic-layer etching (q-ALE) responsivity selective epitaxial growth (SEG) selective wet etching short-term potentiation (STP) Si-cap Si-MOS silica beads silicon site-controlled spin qubits stacked SiGe/Si threading dislocation densities (TDDs) transistors vertical gate-all-around (vGAA) vertical Gate-all-around (vGAA) water decontamination yolk−shell structure |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910595076903321 |
Radamson Henry
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Lo trovi qui: Univ. Federico II | ||
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