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Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (352 p.) |
| Soggetto topico |
Research & information: general
Mathematics & science |
| Soggetto non controllato |
FinFETs
CMOS device processing integrated circuits silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) solid state circuit breaker (SSCB) prototype circuit design GaN HEMT high gate multi-recessed buffer power density power-added efficiency 4H-SiC MESFET IMRD structure power added efficiency 1200 V SiC MOSFET body diode surge reliability silvaco simulation floating gate transistor control gate CMOS device active noise control vacuum channel mean free path vertical air-channel diode vertical transistor field emission particle trajectory model F-N plot space-charge-limited currents 4H-SiC MESFET simulation power added efficiency (PAE) new device three-input transistor T-channel compact circuit style CMOS compatible technology avalanche photodiode SPICE model bandwidth high responsivity silicon photodiode AlGaN/GaN HEMTs thermal simulation transient channel temperature pulse width gate structures band-to-band tunnelling (BTBT) tunnelling field-effect transistor (TFET) germanium-around-source gate-all-around TFET (GAS GAA TFET) average subthreshold swing direct source-to-drain tunneling transport effective mass confinement effective mass multi-subband ensemble Monte Carlo non-equilibrium Green's function DGSOI FinFET core-insulator gate-all-around field effect transistor GAA nanowire one-transistor dynamic random-access memory (1T-DRAM) polysilicon grain boundary electron trapping flexible transistors polymers metal oxides nanocomposites dielectrics active layers nanotransistor quantum transport Landauer-Büttiker formalism R-matrix method nanoscale mosfet quantum current surface transfer doping 2D hole gas (2DHG) diamond MoO3 V2O5 MOSFET reliability random telegraph noise oxide defects SiO2 split-gate trench power MOSFET multiple epitaxial layers specific on-resistance device reliability nanoscale transistor bias temperature instabilities (BTI) defects single-defect spectroscopy non-radiative multiphonon (NMP) model time-dependent defect spectroscopy |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
Filipovic Lado
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon Nanodevices
| Silicon Nanodevices |
| Autore | Radamson Henry |
| Pubbl/distr/stampa | Basel, : MDPI Books, 2022 |
| Descrizione fisica | 1 electronic resource (238 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
silicon
yolk−shell structure anode lithium-ion batteries in-plane nanowire site-controlled epitaxial growth germanium nanowire-based quantum devices HfO2/Si0.7Ge0.3 gate stack ozone oxidation Si-cap interface state density passivation GOI photodetectors dark current responsivity prussian blue nanoparticles organotrialkoxysilane silica beads arsenite arsenate water decontamination vertical gate-all-around (vGAA) digital etch quasi-atomic-layer etching (q-ALE) selective wet etching HNO3 concentration doping effect vertical Gate-all-around (vGAA) p+-Ge0.8Si0.2/Ge stack dual-selective wet etching atomic layer etching (ALE) stacked SiGe/Si epitaxial grown Fin etching FinFET short-term potentiation (STP) long-term potentiation (LTP) charge-trap synaptic transistor band-to-band tunneling pattern recognition neural network neuromorphic system Si-MOS quantum dot spin qubits quantum computing GeSn CVD lasers detectors transistors III-V on Si heteroepitaxy threading dislocation densities (TDDs) anti-phase boundaries (APBs) selective epitaxial growth (SEG) |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910595076903321 |
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Radamson Henry
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| Basel, : MDPI Books, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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