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Miniaturized Transistors, Volume II
Miniaturized Transistors, Volume II
Autore Filipovic Lado
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 online resource (352 p.)
Soggetto topico Mathematics & science
Research & information: general
Soggetto non controllato 1200 V SiC MOSFET
2D hole gas (2DHG)
4H-SiC
4H-SiC MESFET
active layers
active noise control
AlGaN/GaN HEMTs
avalanche photodiode
average subthreshold swing
band-to-band tunnelling (BTBT)
bandwidth
bias temperature instabilities (BTI)
body diode
circuit design
CMOS
CMOS compatible technology
CMOS device
compact circuit style
confinement effective mass
control gate
core-insulator
defects
device processing
device reliability
DGSOI
diamond
dielectrics
direct source-to-drain tunneling
electron trapping
F-N plot
field effect transistor
field emission
FinFET
FinFETs
flexible transistors
floating gate transistor
GAA
GaN
gate structures
gate-all-around
germanium-around-source gate-all-around TFET (GAS GAA TFET)
grain boundary
HEMT
high gate
high responsivity
IMRD structure
integrated circuits
Landauer-Büttiker formalism
mean free path
MESFET
metal oxides
MoO3
mosfet
MOSFET
multi-recessed buffer
multi-subband ensemble Monte Carlo
multiple epitaxial layers
n/a
nanocomposites
nanoscale
nanoscale transistor
nanotransistor
nanowire
new device
non-equilibrium Green's function
non-radiative multiphonon (NMP) model
one-transistor dynamic random-access memory (1T-DRAM)
oxide defects
particle trajectory model
polymers
polysilicon
power added efficiency
power added efficiency (PAE)
power density
power-added efficiency
prototype
pulse width
quantum current
quantum transport
R-matrix method
random telegraph noise
reliability
silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)
silicon photodiode
silvaco simulation
simulation
single-defect spectroscopy
SiO2
solid state circuit breaker (SSCB)
space-charge-limited currents
specific on-resistance
SPICE model
split-gate trench power MOSFET
surface transfer doping
surge reliability
T-channel
thermal simulation
three-input transistor
time-dependent defect spectroscopy
transient channel temperature
transport effective mass
tunnelling field-effect transistor (TFET)
V2O5
vacuum channel
vertical air-channel diode
vertical transistor
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910580205803321
Filipovic Lado  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Silicon Nanodevices
Silicon Nanodevices
Autore Radamson Henry
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 online resource (238 p.)
Soggetto topico Technology: general issues
Soggetto non controllato anode
anti-phase boundaries (APBs)
arsenate
arsenite
atomic layer etching (ALE)
band-to-band tunneling
charge-trap synaptic transistor
CVD
dark current
detectors
digital etch
doping effect
dual-selective wet etching
epitaxial grown
epitaxial growth
Fin etching
FinFET
germanium
GeSn
GOI
heteroepitaxy
HfO2/Si0.7Ge0.3 gate stack
HNO3 concentration
III-V on Si
in-plane nanowire
interface state density
lasers
lithium-ion batteries
long-term potentiation (LTP)
n/a
nanowire-based quantum devices
neural network
neuromorphic system
organotrialkoxysilane
ozone oxidation
p+-Ge0.8Si0.2/Ge stack
passivation
pattern recognition
photodetectors
prussian blue nanoparticles
quantum computing
quantum dot
quasi-atomic-layer etching (q-ALE)
responsivity
selective epitaxial growth (SEG)
selective wet etching
short-term potentiation (STP)
Si-cap
Si-MOS
silica beads
silicon
site-controlled
spin qubits
stacked SiGe/Si
threading dislocation densities (TDDs)
transistors
vertical gate-all-around (vGAA)
vertical Gate-all-around (vGAA)
water decontamination
yolk−shell structure
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910595076903321
Radamson Henry  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui