Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors : Doctoral Thesis accepted by the Peking University, Beijing, China / Mengqi Fu |
Autore | Fu, Mengqi |
Pubbl/distr/stampa | Singapore, : Springer, 2018 |
Descrizione fisica | xv, 102 p. : ill. ; 24 cm |
Soggetto topico |
82-XX - Statistical mechanics, structure of matter [MSC 2020]
78-XX - Optics, electromagnetic theory [MSC 2020] 00A79 (77-XX) - Physics [MSC 2020] |
Soggetto non controllato |
Crystal orientation
Crystal phase Electrical properties Electron microscope Field-effect transistors Growth methods In-situ material characterization InAs nanowires Indium Arsenide MBE and MOCVD Ultrathin nanowires |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Titolo uniforme | |
Record Nr. | UNICAMPANIA-VAN0212110 |
Fu, Mengqi | ||
Singapore, : Springer, 2018 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Vanvitelli | ||
|
Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors : Doctoral Thesis accepted by the Peking University, Beijing, China / Mengqi Fu |
Autore | Fu, Mengqi |
Pubbl/distr/stampa | Singapore, : Springer, 2018 |
Descrizione fisica | xv, 102 p. : ill. ; 24 cm |
Soggetto topico |
00A79 (77-XX) - Physics [MSC 2020]
78-XX - Optics, electromagnetic theory [MSC 2020] 82-XX - Statistical mechanics, structure of matter [MSC 2020] |
Soggetto non controllato |
Crystal orientation
Crystal phase Electrical properties Electron microscope Field-effect transistors Growth methods In-situ material characterization InAs nanowires Indium Arsenide MBE and MOCVD Ultrathin nanowires |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Titolo uniforme | |
Record Nr. | UNICAMPANIA-VAN00212110 |
Fu, Mengqi | ||
Singapore, : Springer, 2018 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Vanvitelli | ||
|