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Advanced CMOS Integrated Circuit Design and Application
| Advanced CMOS Integrated Circuit Design and Application |
| Autore | Yang Jong-Ryul |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (198 p.) |
| Soggetto topico |
History of engineering & technology
Technology: general issues |
| Soggetto non controllato |
90 nm
analog microelectronics design analog system artificial neural network biomedical device biosensors blocker CMOS CMOS circuit CMOS design CMOS detector CMOS rectifier complex thinking concurrent-mode current source current tail current-input ADC current-reuse current-shaping differential detector IC dynamic threshold cancellation technique educational innovation figure-of-merit flicker noise freeware high power conversion efficiency high SNR higher education image processing imaging SNR injection-locked frequency divider integrated circuit design integrated circuit layout integrated folded-dipole antenna LC tank LC-VCO learning algorithm long channel transistors mask operation medical implanted communication service (MICS) MedRadio memristor crossbar memristor switch microbolometer on-wafer open science orthogonal frequency division modulation (OFDM) phase noise pixel-level ADC power management circuit radar sensor readout circuit RF receiver second-order intermodulation (IM2) short channel transistors signal processing spin memristor sub-terahertz imaging switched-biasing varactor vibration energy harvester VLSI voltage responsivity voltage-controlled oscillator wide dynamic range wideband |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910566458003321 |
Yang Jong-Ryul
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanowire Field-Effect Transistor (FET)
| Nanowire Field-Effect Transistor (FET) |
| Autore | García-Loureiro Antonio |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (96 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
aspect ratio of channel cross-section
charge transport CMOS circuit conduction mechanism constriction Coulomb interaction DC and AC characteristic fluctuations device simulation dimensionality reduction drift-diffusion electron-phonon interaction fabrication field effect transistor gate-all-around geometric correlations heat equation hot electrons III-V Integration Kubo-Greenwood formalism lowest order approximation material properties metal gate modelling Monte Carlo MOSFETs nano-cooling nano-transistors nanodevice nanojunction nanowire nanowire field-effect transistors nanowire transistor noise margin fluctuation non-equilibrium Green functions nonequilibrium Green's function one-dimensional multi-subband scattering models Padé approximants phonon-phonon interaction power dissipation power fluctuation quantum confinement quantum electron transport quantum modeling quantum transport random dopant Richardson extrapolation Schrödinger based quantum corrections schrödinger-poisson solvers screening self-consistent Born approximation self-cooling silicon nanomaterials silicon nanowires statistical device simulation stochastic Schrödinger equations TASE thermoelectricity timing fluctuation variability variability effects work function fluctuation ZnO |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Nanowire Field-Effect Transistor |
| Record Nr. | UNINA-9910557553303321 |
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García-Loureiro Antonio
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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