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Advanced CMOS Integrated Circuit Design and Application
| Advanced CMOS Integrated Circuit Design and Application |
| Autore | Yang Jong-Ryul |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (198 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology |
| Soggetto non controllato |
spin memristor
mask operation memristor switch memristor crossbar image processing CMOS voltage-controlled oscillator switched-biasing flicker noise phase noise current source figure-of-merit pixel-level ADC current-input ADC readout circuit microbolometer high SNR wide dynamic range current-reuse injection-locked frequency divider radar sensor wideband RF receiver blocker second-order intermodulation (IM2) orthogonal frequency division modulation (OFDM) MedRadio medical implanted communication service (MICS) biomedical device biosensors LC-VCO current-shaping 90 nm current tail varactor LC tank on-wafer vibration energy harvester power management circuit CMOS rectifier dynamic threshold cancellation technique high power conversion efficiency CMOS circuit analog system signal processing learning algorithm artificial neural network freeware open science analog microelectronics design long channel transistors short channel transistors integrated circuit design CMOS design VLSI higher education educational innovation integrated circuit layout complex thinking CMOS detector concurrent-mode differential detector IC imaging SNR integrated folded-dipole antenna sub-terahertz imaging voltage responsivity |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910566458003321 |
Yang Jong-Ryul
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanowire Field-Effect Transistor (FET)
| Nanowire Field-Effect Transistor (FET) |
| Autore | García-Loureiro Antonio |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (96 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
random dopant
drift-diffusion variability device simulation nanodevice screening Coulomb interaction III-V TASE MOSFETs Integration nanowire field-effect transistors silicon nanomaterials charge transport one-dimensional multi-subband scattering models Kubo–Greenwood formalism schrödinger-poisson solvers DC and AC characteristic fluctuations gate-all-around nanowire work function fluctuation aspect ratio of channel cross-section timing fluctuation noise margin fluctuation power fluctuation CMOS circuit statistical device simulation variability effects Monte Carlo Schrödinger based quantum corrections quantum modeling nonequilibrium Green’s function nanowire transistor electron–phonon interaction phonon–phonon interaction self-consistent Born approximation lowest order approximation Padé approximants Richardson extrapolation ZnO field effect transistor conduction mechanism metal gate material properties fabrication modelling nanojunction constriction quantum electron transport quantum confinement dimensionality reduction stochastic Schrödinger equations geometric correlations silicon nanowires nano-transistors quantum transport hot electrons self-cooling nano-cooling thermoelectricity heat equation non-equilibrium Green functions power dissipation |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Nanowire Field-Effect Transistor |
| Record Nr. | UNINA-9910557553303321 |
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García-Loureiro Antonio
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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