Advanced CMOS cell design / Etienne Sicard, Sonia Delmas Bendhia |
Autore | Sicard, Etienne <1961- > |
Pubbl/distr/stampa | New York : McGraw-Hill, 2007 |
Descrizione fisica | x, 364 p. : ill. ; 25 cm |
Disciplina | 621.381'5 |
Altri autori (Persone) | Delmas Bendhia, Sonia <1972- > |
Soggetto non controllato | CMOS |
ISBN |
978-0-07-148836-5
0-07-148836-5 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-990008798280403321 |
Sicard, Etienne <1961- >
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New York : McGraw-Hill, 2007 | ||
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Lo trovi qui: Univ. Federico II | ||
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Advanced CMOS Integrated Circuit Design and Application |
Autore | Yang Jong-Ryul |
Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
Descrizione fisica | 1 electronic resource (198 p.) |
Soggetto topico |
Technology: general issues
History of engineering & technology |
Soggetto non controllato |
spin memristor
mask operation memristor switch memristor crossbar image processing CMOS voltage-controlled oscillator switched-biasing flicker noise phase noise current source figure-of-merit pixel-level ADC current-input ADC readout circuit microbolometer high SNR wide dynamic range current-reuse injection-locked frequency divider radar sensor wideband RF receiver blocker second-order intermodulation (IM2) orthogonal frequency division modulation (OFDM) MedRadio medical implanted communication service (MICS) biomedical device biosensors LC-VCO current-shaping 90 nm current tail varactor LC tank on-wafer vibration energy harvester power management circuit CMOS rectifier dynamic threshold cancellation technique high power conversion efficiency CMOS circuit analog system signal processing learning algorithm artificial neural network freeware open science analog microelectronics design long channel transistors short channel transistors integrated circuit design CMOS design VLSI higher education educational innovation integrated circuit layout complex thinking CMOS detector concurrent-mode differential detector IC imaging SNR integrated folded-dipole antenna sub-terahertz imaging voltage responsivity |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910566458003321 |
Yang Jong-Ryul
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Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
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Lo trovi qui: Univ. Federico II | ||
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Basics of CMOS cell design / Etienne Sicard, Sonia Delmas Bendhia |
Autore | Sicard, Etienne <1961- > |
Pubbl/distr/stampa | New York : McGraw-Hill, 2007 |
Descrizione fisica | 24 cm : ill. ; XV, 429 p. |
Disciplina | 621.381'5 |
Altri autori (Persone) | Delmas Bendhia, Sonia <1972- > |
Soggetto non controllato | CMOS |
ISBN |
0-07-148839-1
978-0-07148839-6 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-990008496790403321 |
Sicard, Etienne <1961- >
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New York : McGraw-Hill, 2007 | ||
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Lo trovi qui: Univ. Federico II | ||
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Closing the Loop Around Neural Systems |
Autore | Ahmed El Hady |
Pubbl/distr/stampa | Frontiers Media SA, 2014 |
Descrizione fisica | 1 electronic resource (423 p.) |
Collana |
Frontiers Research Topics
Frontiers in Neural Circuits |
Soggetto topico |
Neurophysiology
Neurophysiology - methods |
Soggetto non controllato |
microelectrode array
CMOS DBS Feedback Real-time BCI stimulation |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910136400203321 |
Ahmed El Hady
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Frontiers Media SA, 2014 | ||
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Lo trovi qui: Univ. Federico II | ||
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CMOS : circuit design, layout, and simulation / R. Jacob Baker, Harry W. Li, David E. Boyce |
Autore | Baker, R. Jacob <Russell ; <1964- |
Pubbl/distr/stampa | New York : IEEE, ©1998 |
Descrizione fisica | 902 p. : ill. ; 24 cm |
Disciplina | 621.381'6 |
Altri autori (Persone) |
Li, Harry W. <1960- >
Boyce, David E. <1940- > |
Collana | IEEE press series on microelectronic systems |
Soggetto non controllato |
Circuiti integrati - Progettazione
CMOS |
ISBN | 0-7803-3416-7 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-990009358990403321 |
Baker, R. Jacob <Russell ; <1964-
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New York : IEEE, ©1998 | ||
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Lo trovi qui: Univ. Federico II | ||
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Development of CMOS-MEMS/NEMS Devices / Jaume Verd, Jaume Segura |
Autore | Verd Jaume |
Pubbl/distr/stampa | Basel, Switzerland : , : MDPI, , 2019 |
Descrizione fisica | 1 electronic resource (165 p.) |
Soggetto non controllato |
encapsulation
NEM memory switch magnetotransistor gas sensor nano-system array metal oxide (MOX) sensor capacitive pressure sensor real-time temperature compensation loop mechanical relays single-crystal silicon (SC-Si) MEMS relays MEMS oscillator micro-electro-mechanical system (MEMS) uncooled IR-bolometer microelectromechanical systems microbolometer programmable sustaining amplifier micro sensor CMOS-MEMS pierce oscillator MEMS resonators micro/nanoelectromechanical systems (MEMS/NEMS) resonator microhotplate NEMS application-specific integrated circuit (ASIC) MEMS modelling magnetic field chopper instrumentation amplifier microresonators interface circuit Hall effect thermal detector temperature sensor infrared sensor CMOS-NEMS CMOS atomic force microscope MEMS switches stent micro-electro-mechanical systems (MEMS) sensors nano resonator silicon-on-insulator (SOI) MEMS-ASIC integration Sigma-Delta MEMS characterization high-Q capacitive accelerometer mass sensors M3D |
ISBN |
9783039210695
3039210696 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910346840003321 |
Verd Jaume
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Basel, Switzerland : , : MDPI, , 2019 | ||
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Lo trovi qui: Univ. Federico II | ||
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Electronics for Sensors |
Autore | Ferri Giuseppe |
Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
Descrizione fisica | 1 electronic resource (272 p.) |
Soggetto topico | Technology: general issues |
Soggetto non controllato |
CMOS image sensor
linearity adaptive nonlinear ramp fully differential pipeline double auto-zeroing high framerate fixed pattern noise floating diffusion readout scheme ramp generator circuit ultrasound PMUT high-voltage (HV) transmitter low-voltage receiver (RX) amplifier ultrasound application-specific integrated circuit (ASIC) monolithical integration CMOS MEMS electrical impedance spectroscopy (EIS) time-to-digital converter (TDC) time interpolator phase polar demodulator quantization reconfigurability current mode sensor interface silicon photomultiplier transimpedance amplifier voltage current conveyor field-programmable gate arrays (FPGA) non-uniform multiphase (NUMP) method temperature correction radiation sensor interface silicon photomultiplier (SiPM) mobile dosimeter analog-to-digital converter (ADC) magnetic bioreactor magnetoactive scaffolds tissue engineering magnetic actuator magnetoelectric stimulation selectable gain amplifier resistive-sensor current divider current reference front-end electronics single-photon response timing accuracy ultrasonic gas flowmeter the principle of time-difference method data filtering low-power measurement auto-balancing bridge method FIR filter FPGA impedance inductive-loop sensor multifrequency vehicle magnetic profile vector voltmeter signal processing background radiation monitoring system Atmel AVR ATmega328 microcontroller (MC) Geiger-Mueller counter Petri net model fifth-order low-pass filter operational transconductance amplifier multiple-input bulk-driven technique subthreshold region nanopower temperature compensation hysteresis quartz flexible accelerometer aerial inertial navigation system thermal effect creep effect electronic nose convolutional neural network component analysis xenon TPC trigger concepts data acquisition circuits |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910557345203321 |
Ferri Giuseppe
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Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
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Lo trovi qui: Univ. Federico II | ||
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Integrated Circuits and Systems for Smart Sensory Applications |
Autore | Serra-Graells Francesc |
Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
Descrizione fisica | 1 electronic resource (206 p.) |
Soggetto topico |
Technology: general issues
History of engineering & technology |
Soggetto non controllato |
wake-up receiver
digital controller reliability electronic toll collection (ETC) system dedicated short range communication (DSRC) temperature compensation piezoresistive pressure sensor negative temperature coefficient ACE-Q100 CMOS epilepsy seizure multichannel neural recording feature extraction closed-loop neurostimulator low-power low-noise amplifier implantable medical device switched capacitor voltage converter wide load range multiphase operation variable frequency integrated circuits EEPROM reprogrammable fuses memory cells trimming techniques with fuses digital temperature sensor temperature sensor with digital serial interface asynchronous control logic successive approximation register (SAR) wireless access in vehicular environments (WAVE) low power consumption capacitive digital to analog converter (CDAC) CMOS neural amplifier AC coupling pseudoresistor nonlinear distortion area-efficient design sensor node power mode wireless sensor networks power management spiking neural network leaky integrate and fire neuromorphic artificial neural networks artificial intelligence image classification capacitance-to-digital converter iterative-delay-chain discharge CMOS capacitive sensor interface |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910580214903321 |
Serra-Graells Francesc
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Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
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Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors / Lado Filipovic, Tibor Grasser |
Autore | Filipovic Lado |
Pubbl/distr/stampa | Basel, Switzerland : , : MDPI, , 2019 |
Descrizione fisica | 1 electronic resource (202 p.) |
Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
ISBN |
9783039210114
3039210114 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910346680003321 |
Filipovic Lado
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Basel, Switzerland : , : MDPI, , 2019 | ||
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Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors, Volume II |
Autore | Filipovic Lado |
Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
Descrizione fisica | 1 electronic resource (352 p.) |
Soggetto topico |
Research & information: general
Mathematics & science |
Soggetto non controllato |
FinFETs
CMOS device processing integrated circuits silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) solid state circuit breaker (SSCB) prototype circuit design GaN HEMT high gate multi-recessed buffer power density power-added efficiency 4H-SiC MESFET IMRD structure power added efficiency 1200 V SiC MOSFET body diode surge reliability silvaco simulation floating gate transistor control gate CMOS device active noise control vacuum channel mean free path vertical air-channel diode vertical transistor field emission particle trajectory model F-N plot space-charge-limited currents 4H-SiC MESFET simulation power added efficiency (PAE) new device three-input transistor T-channel compact circuit style CMOS compatible technology avalanche photodiode SPICE model bandwidth high responsivity silicon photodiode AlGaN/GaN HEMTs thermal simulation transient channel temperature pulse width gate structures band-to-band tunnelling (BTBT) tunnelling field-effect transistor (TFET) germanium-around-source gate-all-around TFET (GAS GAA TFET) average subthreshold swing direct source-to-drain tunneling transport effective mass confinement effective mass multi-subband ensemble Monte Carlo non-equilibrium Green's function DGSOI FinFET core-insulator gate-all-around field effect transistor GAA nanowire one-transistor dynamic random-access memory (1T-DRAM) polysilicon grain boundary electron trapping flexible transistors polymers metal oxides nanocomposites dielectrics active layers nanotransistor quantum transport Landauer-Büttiker formalism R-matrix method nanoscale mosfet quantum current surface transfer doping 2D hole gas (2DHG) diamond MoO3 V2O5 MOSFET reliability random telegraph noise oxide defects SiO2 split-gate trench power MOSFET multiple epitaxial layers specific on-resistance device reliability nanoscale transistor bias temperature instabilities (BTI) defects single-defect spectroscopy non-radiative multiphonon (NMP) model time-dependent defect spectroscopy |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910580205803321 |
Filipovic Lado
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Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
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Lo trovi qui: Univ. Federico II | ||
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