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Advanced CMOS cell design / Etienne Sicard, Sonia Delmas Bendhia
Advanced CMOS cell design / Etienne Sicard, Sonia Delmas Bendhia
Autore Sicard, Etienne <1961- >
Pubbl/distr/stampa New York : McGraw-Hill, 2007
Descrizione fisica x, 364 p. : ill. ; 25 cm
Disciplina 621.381'5
Altri autori (Persone) Delmas Bendhia, Sonia <1972- >
Soggetto non controllato CMOS
ISBN 978-0-07-148836-5
0-07-148836-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-990008798280403321
Sicard, Etienne <1961- >  
New York : McGraw-Hill, 2007
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Advanced CMOS Integrated Circuit Design and Application
Advanced CMOS Integrated Circuit Design and Application
Autore Yang Jong-Ryul
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 electronic resource (198 p.)
Soggetto topico Technology: general issues
History of engineering & technology
Soggetto non controllato spin memristor
mask operation
memristor switch
memristor crossbar
image processing
CMOS
voltage-controlled oscillator
switched-biasing
flicker noise
phase noise
current source
figure-of-merit
pixel-level ADC
current-input ADC
readout circuit
microbolometer
high SNR
wide dynamic range
current-reuse
injection-locked frequency divider
radar sensor
wideband
RF receiver
blocker
second-order intermodulation (IM2)
orthogonal frequency division modulation (OFDM)
MedRadio
medical implanted communication service (MICS)
biomedical device
biosensors
LC-VCO
current-shaping
90 nm
current tail
varactor
LC tank
on-wafer
vibration energy harvester
power management circuit
CMOS rectifier
dynamic threshold cancellation technique
high power conversion efficiency
CMOS circuit
analog system
signal processing
learning algorithm
artificial neural network
freeware
open science
analog microelectronics design
long channel transistors
short channel transistors
integrated circuit design
CMOS design
VLSI
higher education
educational innovation
integrated circuit layout
complex thinking
CMOS detector
concurrent-mode
differential detector IC
imaging SNR
integrated folded-dipole antenna
sub-terahertz imaging
voltage responsivity
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910566458003321
Yang Jong-Ryul  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Basics of CMOS cell design / Etienne Sicard, Sonia Delmas Bendhia
Basics of CMOS cell design / Etienne Sicard, Sonia Delmas Bendhia
Autore Sicard, Etienne <1961- >
Pubbl/distr/stampa New York : McGraw-Hill, 2007
Descrizione fisica 24 cm : ill. ; XV, 429 p.
Disciplina 621.381'5
Altri autori (Persone) Delmas Bendhia, Sonia <1972- >
Soggetto non controllato CMOS
ISBN 0-07-148839-1
978-0-07148839-6
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-990008496790403321
Sicard, Etienne <1961- >  
New York : McGraw-Hill, 2007
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Closing the Loop Around Neural Systems
Closing the Loop Around Neural Systems
Autore Ahmed El Hady
Pubbl/distr/stampa Frontiers Media SA, 2014
Descrizione fisica 1 electronic resource (423 p.)
Collana Frontiers Research Topics
Frontiers in Neural Circuits
Soggetto topico Neurophysiology
Neurophysiology - methods
Soggetto non controllato microelectrode array
CMOS
DBS
Feedback
Real-time
BCI
stimulation
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910136400203321
Ahmed El Hady  
Frontiers Media SA, 2014
Materiale a stampa
Lo trovi qui: Univ. Federico II
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CMOS : circuit design, layout, and simulation / R. Jacob Baker, Harry W. Li, David E. Boyce
CMOS : circuit design, layout, and simulation / R. Jacob Baker, Harry W. Li, David E. Boyce
Autore Baker, R. Jacob <Russell ; <1964-
Pubbl/distr/stampa New York : IEEE, ©1998
Descrizione fisica 902 p. : ill. ; 24 cm
Disciplina 621.381'6
Altri autori (Persone) Li, Harry W. <1960- >
Boyce, David E. <1940- >
Collana IEEE press series on microelectronic systems
Soggetto non controllato Circuiti integrati - Progettazione
CMOS
ISBN 0-7803-3416-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-990009358990403321
Baker, R. Jacob <Russell ; <1964-  
New York : IEEE, ©1998
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Development of CMOS-MEMS/NEMS Devices
Development of CMOS-MEMS/NEMS Devices
Autore Verd Jaume
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2019
Descrizione fisica 1 electronic resource (165 p.)
Soggetto non controllato encapsulation
NEM memory switch
magnetotransistor
gas sensor
nano-system array
metal oxide (MOX) sensor
capacitive pressure sensor
real-time temperature compensation loop
mechanical relays
single-crystal silicon (SC-Si)
MEMS relays
MEMS
oscillator
micro-electro-mechanical system (MEMS)
uncooled IR-bolometer
microelectromechanical systems
microbolometer
programmable sustaining amplifier
micro sensor
CMOS-MEMS
pierce oscillator
MEMS resonators
micro/nanoelectromechanical systems (MEMS/NEMS)
resonator
microhotplate
NEMS
application-specific integrated circuit (ASIC)
MEMS modelling
magnetic field
chopper instrumentation amplifier
microresonators
interface circuit
Hall effect
thermal detector
temperature sensor
infrared sensor
CMOS-NEMS
CMOS
atomic force microscope
MEMS switches
stent
micro-electro-mechanical systems (MEMS) sensors
nano resonator
silicon-on-insulator (SOI)
MEMS-ASIC integration
Sigma-Delta
MEMS characterization
high-Q capacitive accelerometer
mass sensors
M3D
ISBN 3-03921-069-6
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910346840003321
Verd Jaume  
MDPI - Multidisciplinary Digital Publishing Institute, 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Electronics for Sensors
Electronics for Sensors
Autore Ferri Giuseppe
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 electronic resource (272 p.)
Soggetto topico Technology: general issues
Soggetto non controllato CMOS image sensor
linearity
adaptive nonlinear ramp
fully differential pipeline
double auto-zeroing
high framerate
fixed pattern noise
floating diffusion
readout scheme
ramp generator circuit
ultrasound
PMUT
high-voltage (HV) transmitter
low-voltage receiver (RX) amplifier
ultrasound application-specific integrated circuit (ASIC)
monolithical integration
CMOS
MEMS
electrical impedance spectroscopy (EIS)
time-to-digital converter (TDC)
time interpolator
phase
polar demodulator
quantization
reconfigurability
current mode
sensor interface
silicon photomultiplier
transimpedance amplifier
voltage current conveyor
field-programmable gate arrays (FPGA)
non-uniform multiphase (NUMP) method
temperature correction
radiation sensor interface
silicon photomultiplier (SiPM)
mobile dosimeter
analog-to-digital converter (ADC)
magnetic bioreactor
magnetoactive scaffolds
tissue engineering
magnetic actuator
magnetoelectric stimulation
selectable gain amplifier
resistive-sensor
current divider
current reference
front-end electronics
single-photon response
timing accuracy
ultrasonic gas flowmeter
the principle of time-difference method
data filtering
low-power measurement
auto-balancing bridge method
FIR filter
FPGA
impedance
inductive-loop sensor
multifrequency
vehicle magnetic profile
vector voltmeter
signal processing
background radiation monitoring system
Atmel AVR ATmega328 microcontroller (MC)
Geiger-Mueller counter
Petri net model
fifth-order low-pass filter
operational transconductance amplifier
multiple-input bulk-driven technique
subthreshold region
nanopower
temperature compensation
hysteresis
quartz flexible accelerometer
aerial inertial navigation system
thermal effect
creep effect
electronic nose
convolutional neural network
component analysis
xenon TPC
trigger concepts
data acquisition circuits
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557345203321
Ferri Giuseppe  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Integrated Circuits and Systems for Smart Sensory Applications
Integrated Circuits and Systems for Smart Sensory Applications
Autore Serra-Graells Francesc
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 electronic resource (206 p.)
Soggetto topico Technology: general issues
History of engineering & technology
Soggetto non controllato wake-up receiver
digital controller
reliability
electronic toll collection (ETC) system
dedicated short range communication (DSRC)
temperature compensation
piezoresistive
pressure sensor
negative temperature coefficient
ACE-Q100
CMOS
epilepsy
seizure
multichannel neural recording
feature extraction
closed-loop neurostimulator
low-power
low-noise amplifier
implantable medical device
switched capacitor
voltage converter
wide load range
multiphase operation
variable frequency
integrated circuits
EEPROM reprogrammable fuses
memory cells
trimming techniques with fuses
digital temperature sensor
temperature sensor with digital serial interface
asynchronous control logic
successive approximation register (SAR)
wireless access in vehicular environments (WAVE)
low power consumption
capacitive digital to analog converter (CDAC)
CMOS neural amplifier
AC coupling
pseudoresistor
nonlinear distortion
area-efficient design
sensor node
power mode
wireless sensor networks
power management
spiking neural network
leaky integrate and fire
neuromorphic
artificial neural networks
artificial intelligence
image classification
capacitance-to-digital converter
iterative-delay-chain discharge
CMOS capacitive sensor interface
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910580214903321
Serra-Graells Francesc  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Miniaturized Transistors
Miniaturized Transistors
Autore Grasser Tibor
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2019
Descrizione fisica 1 electronic resource (202 p.)
Soggetto non controllato MOSFET
total ionizing dose (TID)
low power consumption
process simulation
two-dimensional material
negative-capacitance
power consumption
technology computer aided design (TCAD)
thin-film transistors (TFTs)
band-to-band tunneling (BTBT)
nanowires
inversion channel
metal oxide semiconductor field effect transistor (MOSFET)
spike-timing-dependent plasticity (STDP)
field effect transistor
segregation
systematic variations
Sentaurus TCAD
indium selenide
nanosheets
technology computer-aided design (TCAD)
high-? dielectric
subthreshold bias range
statistical variations
fin field effect transistor (FinFET)
compact models
non-equilibrium Green's function
etching simulation
highly miniaturized transistor structure
compact model
silicon nanowire
surface potential
Silicon-Germanium source/drain (SiGe S/D)
nanowire
plasma-aided molecular beam epitaxy (MBE)
phonon scattering
mobility
silicon-on-insulator
drain engineered
device simulation
variability
semi-floating gate
synaptic transistor
neuromorphic system
theoretical model
CMOS
ferroelectrics
tunnel field-effect transistor (TFET)
SiGe
metal gate granularity
buried channel
ON-state
bulk NMOS devices
ambipolar
piezoelectrics
tunnel field effect transistor (TFET)
FinFETs
polarization
field-effect transistor
line edge roughness
random discrete dopants
radiation hardened by design (RHBD)
low energy
flux calculation
doping incorporation
low voltage
topography simulation
MOS devices
low-frequency noise
high-k
layout
level set
process variations
subthreshold
metal gate stack
electrostatic discharge (ESD)
ISBN 3-03921-011-4
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910346680003321
Grasser Tibor  
MDPI - Multidisciplinary Digital Publishing Institute, 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Miniaturized Transistors, Volume II
Miniaturized Transistors, Volume II
Autore Filipovic Lado
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 electronic resource (352 p.)
Soggetto topico Research & information: general
Mathematics & science
Soggetto non controllato FinFETs
CMOS
device processing
integrated circuits
silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)
solid state circuit breaker (SSCB)
prototype
circuit design
GaN
HEMT
high gate
multi-recessed buffer
power density
power-added efficiency
4H-SiC
MESFET
IMRD structure
power added efficiency
1200 V SiC MOSFET
body diode
surge reliability
silvaco simulation
floating gate transistor
control gate
CMOS device
active noise control
vacuum channel
mean free path
vertical air-channel diode
vertical transistor
field emission
particle trajectory model
F-N plot
space-charge-limited currents
4H-SiC MESFET
simulation
power added efficiency (PAE)
new device
three-input transistor
T-channel
compact circuit style
CMOS compatible technology
avalanche photodiode
SPICE model
bandwidth
high responsivity
silicon photodiode
AlGaN/GaN HEMTs
thermal simulation
transient channel temperature
pulse width
gate structures
band-to-band tunnelling (BTBT)
tunnelling field-effect transistor (TFET)
germanium-around-source gate-all-around TFET (GAS GAA TFET)
average subthreshold swing
direct source-to-drain tunneling
transport effective mass
confinement effective mass
multi-subband ensemble Monte Carlo
non-equilibrium Green's function
DGSOI
FinFET
core-insulator
gate-all-around
field effect transistor
GAA
nanowire
one-transistor dynamic random-access memory (1T-DRAM)
polysilicon
grain boundary
electron trapping
flexible transistors
polymers
metal oxides
nanocomposites
dielectrics
active layers
nanotransistor
quantum transport
Landauer-Büttiker formalism
R-matrix method
nanoscale
mosfet
quantum current
surface transfer doping
2D hole gas (2DHG)
diamond
MoO3
V2O5
MOSFET
reliability
random telegraph noise
oxide defects
SiO2
split-gate trench power MOSFET
multiple epitaxial layers
specific on-resistance
device reliability
nanoscale transistor
bias temperature instabilities (BTI)
defects
single-defect spectroscopy
non-radiative multiphonon (NMP) model
time-dependent defect spectroscopy
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910580205803321
Filipovic Lado  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
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