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Advanced CMOS cell design / Etienne Sicard, Sonia Delmas Bendhia
Advanced CMOS cell design / Etienne Sicard, Sonia Delmas Bendhia
Autore Sicard, Etienne <1961- >
Pubbl/distr/stampa New York : McGraw-Hill, 2007
Descrizione fisica x, 364 p. : ill. ; 25 cm
Disciplina 621.381'5
Altri autori (Persone) Delmas Bendhia, Sonia <1972- >
Soggetto non controllato CMOS
ISBN 978-0-07-148836-5
0-07-148836-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-990008798280403321
Sicard, Etienne <1961- >  
New York : McGraw-Hill, 2007
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Advanced CMOS Integrated Circuit Design and Application
Advanced CMOS Integrated Circuit Design and Application
Autore Yang Jong-Ryul
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 online resource (198 p.)
Soggetto topico History of engineering & technology
Technology: general issues
Soggetto non controllato 90 nm
analog microelectronics design
analog system
artificial neural network
biomedical device
biosensors
blocker
CMOS
CMOS circuit
CMOS design
CMOS detector
CMOS rectifier
complex thinking
concurrent-mode
current source
current tail
current-input ADC
current-reuse
current-shaping
differential detector IC
dynamic threshold cancellation technique
educational innovation
figure-of-merit
flicker noise
freeware
high power conversion efficiency
high SNR
higher education
image processing
imaging SNR
injection-locked frequency divider
integrated circuit design
integrated circuit layout
integrated folded-dipole antenna
LC tank
LC-VCO
learning algorithm
long channel transistors
mask operation
medical implanted communication service (MICS)
MedRadio
memristor crossbar
memristor switch
microbolometer
on-wafer
open science
orthogonal frequency division modulation (OFDM)
phase noise
pixel-level ADC
power management circuit
radar sensor
readout circuit
RF receiver
second-order intermodulation (IM2)
short channel transistors
signal processing
spin memristor
sub-terahertz imaging
switched-biasing
varactor
vibration energy harvester
VLSI
voltage responsivity
voltage-controlled oscillator
wide dynamic range
wideband
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910566458003321
Yang Jong-Ryul  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Basics of CMOS cell design / Etienne Sicard, Sonia Delmas Bendhia
Basics of CMOS cell design / Etienne Sicard, Sonia Delmas Bendhia
Autore Sicard, Etienne <1961- >
Pubbl/distr/stampa New York : McGraw-Hill, 2007
Descrizione fisica 24 cm : ill. ; XV, 429 p.
Disciplina 621.381'5
Altri autori (Persone) Delmas Bendhia, Sonia <1972- >
Soggetto non controllato CMOS
ISBN 0-07-148839-1
978-0-07148839-6
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-990008496790403321
Sicard, Etienne <1961- >  
New York : McGraw-Hill, 2007
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Closing the Loop Around Neural Systems
Closing the Loop Around Neural Systems
Autore Ahmed El Hady
Pubbl/distr/stampa Frontiers Media SA, 2014
Descrizione fisica 1 online resource (423 p.)
Collana Frontiers Research Topics
Frontiers in Neural Circuits
Soggetto topico Neurosciences
Soggetto non controllato BCI
CMOS
DBS
Feedback
microelectrode array
Real-time
stimulation
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910136400203321
Ahmed El Hady  
Frontiers Media SA, 2014
Materiale a stampa
Lo trovi qui: Univ. Federico II
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CMOS : circuit design, layout, and simulation / R. Jacob Baker, Harry W. Li, David E. Boyce
CMOS : circuit design, layout, and simulation / R. Jacob Baker, Harry W. Li, David E. Boyce
Autore Baker, R. Jacob <Russell ; <1964-
Pubbl/distr/stampa New York : IEEE, ©1998
Descrizione fisica 902 p. : ill. ; 24 cm
Disciplina 621.381'6
Altri autori (Persone) Li, Harry W. <1960- >
Boyce, David E. <1940- >
Collana IEEE press series on microelectronic systems
Soggetto non controllato Circuiti integrati - Progettazione
CMOS
ISBN 0-7803-3416-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-990009358990403321
Baker, R. Jacob <Russell ; <1964-  
New York : IEEE, ©1998
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Development of CMOS-MEMS/NEMS Devices / Jaume Verd, Jaume Segura
Development of CMOS-MEMS/NEMS Devices / Jaume Verd, Jaume Segura
Autore Verd Jaume
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2019
Descrizione fisica 1 electronic resource (165 p.)
Soggetto topico History of engineering and technology
Soggetto non controllato encapsulation
NEM memory switch
magnetotransistor
gas sensor
nano-system array
metal oxide (MOX) sensor
capacitive pressure sensor
real-time temperature compensation loop
mechanical relays
single-crystal silicon (SC-Si)
MEMS relays
MEMS
oscillator
micro-electro-mechanical system (MEMS)
uncooled IR-bolometer
microelectromechanical systems
microbolometer
programmable sustaining amplifier
micro sensor
CMOS-MEMS
pierce oscillator
MEMS resonators
micro/nanoelectromechanical systems (MEMS/NEMS)
resonator
microhotplate
NEMS
application-specific integrated circuit (ASIC)
MEMS modelling
magnetic field
chopper instrumentation amplifier
microresonators
interface circuit
Hall effect
thermal detector
temperature sensor
infrared sensor
CMOS-NEMS
CMOS
atomic force microscope
MEMS switches
stent
micro-electro-mechanical systems (MEMS) sensors
nano resonator
silicon-on-insulator (SOI)
MEMS-ASIC integration
Sigma-Delta
MEMS characterization
high-Q capacitive accelerometer
mass sensors
M3D
ISBN 9783039210695
3039210696
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910346840003321
Verd Jaume  
MDPI - Multidisciplinary Digital Publishing Institute, 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Electronics for Sensors
Electronics for Sensors
Autore Ferri Giuseppe
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 online resource (272 p.)
Soggetto topico Technology: general issues
Soggetto non controllato adaptive nonlinear ramp
aerial inertial navigation system
analog-to-digital converter (ADC)
Atmel AVR ATmega328 microcontroller (MC)
auto-balancing bridge method
background radiation monitoring system
CMOS
CMOS image sensor
component analysis
convolutional neural network
creep effect
current divider
current mode
current reference
data acquisition circuits
data filtering
double auto-zeroing
electrical impedance spectroscopy (EIS)
electronic nose
field-programmable gate arrays (FPGA)
fifth-order low-pass filter
FIR filter
fixed pattern noise
floating diffusion
FPGA
front-end electronics
fully differential pipeline
Geiger-Mueller counter
high framerate
high-voltage (HV) transmitter
hysteresis
impedance
inductive-loop sensor
linearity
low-power measurement
low-voltage receiver (RX) amplifier
magnetic actuator
magnetic bioreactor
magnetoactive scaffolds
magnetoelectric stimulation
MEMS
mobile dosimeter
monolithical integration
multifrequency
multiple-input bulk-driven technique
n/a
nanopower
non-uniform multiphase (NUMP) method
operational transconductance amplifier
Petri net model
phase
PMUT
polar demodulator
quantization
quartz flexible accelerometer
radiation sensor interface
ramp generator circuit
readout scheme
reconfigurability
resistive-sensor
selectable gain amplifier
sensor interface
signal processing
silicon photomultiplier
silicon photomultiplier (SiPM)
single-photon response
subthreshold region
temperature compensation
temperature correction
the principle of time-difference method
thermal effect
time interpolator
time-to-digital converter (TDC)
timing accuracy
tissue engineering
transimpedance amplifier
trigger concepts
ultrasonic gas flowmeter
ultrasound
ultrasound application-specific integrated circuit (ASIC)
vector voltmeter
vehicle magnetic profile
voltage current conveyor
xenon TPC
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557345203321
Ferri Giuseppe  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Integrated Circuits and Systems for Smart Sensory Applications
Integrated Circuits and Systems for Smart Sensory Applications
Autore Serra-Graells Francesc
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 online resource (206 p.)
Soggetto topico History of engineering & technology
Technology: general issues
Soggetto non controllato AC coupling
ACE-Q100
area-efficient design
artificial intelligence
artificial neural networks
asynchronous control logic
capacitance-to-digital converter
capacitive digital to analog converter (CDAC)
closed-loop neurostimulator
CMOS
CMOS capacitive sensor interface
CMOS neural amplifier
dedicated short range communication (DSRC)
digital controller
digital temperature sensor
EEPROM reprogrammable fuses
electronic toll collection (ETC) system
epilepsy
feature extraction
image classification
implantable medical device
integrated circuits
iterative-delay-chain discharge
leaky integrate and fire
low power consumption
low-noise amplifier
low-power
memory cells
multichannel neural recording
multiphase operation
negative temperature coefficient
neuromorphic
nonlinear distortion
piezoresistive
power management
power mode
pressure sensor
pseudoresistor
reliability
seizure
sensor node
spiking neural network
successive approximation register (SAR)
switched capacitor
temperature compensation
temperature sensor with digital serial interface
trimming techniques with fuses
variable frequency
voltage converter
wake-up receiver
wide load range
wireless access in vehicular environments (WAVE)
wireless sensor networks
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910580214903321
Serra-Graells Francesc  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Miniaturized Transistors / Lado Filipovic, Tibor Grasser
Miniaturized Transistors / Lado Filipovic, Tibor Grasser
Autore Filipovic Lado
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2019
Descrizione fisica 1 electronic resource (202 p.)
Soggetto topico History of engineering and technology
Soggetto non controllato MOSFET
total ionizing dose (TID)
low power consumption
process simulation
two-dimensional material
negative-capacitance
power consumption
technology computer aided design (TCAD)
thin-film transistors (TFTs)
band-to-band tunneling (BTBT)
nanowires
inversion channel
metal oxide semiconductor field effect transistor (MOSFET)
spike-timing-dependent plasticity (STDP)
field effect transistor
segregation
systematic variations
Sentaurus TCAD
indium selenide
nanosheets
technology computer-aided design (TCAD)
high-? dielectric
subthreshold bias range
statistical variations
fin field effect transistor (FinFET)
compact models
non-equilibrium Green's function
etching simulation
highly miniaturized transistor structure
compact model
silicon nanowire
surface potential
Silicon-Germanium source/drain (SiGe S/D)
nanowire
plasma-aided molecular beam epitaxy (MBE)
phonon scattering
mobility
silicon-on-insulator
drain engineered
device simulation
variability
semi-floating gate
synaptic transistor
neuromorphic system
theoretical model
CMOS
ferroelectrics
tunnel field-effect transistor (TFET)
SiGe
metal gate granularity
buried channel
ON-state
bulk NMOS devices
ambipolar
piezoelectrics
tunnel field effect transistor (TFET)
FinFETs
polarization
field-effect transistor
line edge roughness
random discrete dopants
radiation hardened by design (RHBD)
low energy
flux calculation
doping incorporation
low voltage
topography simulation
MOS devices
low-frequency noise
high-k
layout
level set
process variations
subthreshold
metal gate stack
electrostatic discharge (ESD)
ISBN 9783039210114
3039210114
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910346680003321
Filipovic Lado  
MDPI - Multidisciplinary Digital Publishing Institute, 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Miniaturized Transistors, Volume II
Miniaturized Transistors, Volume II
Autore Filipovic Lado
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 online resource (352 p.)
Soggetto topico Mathematics & science
Research & information: general
Soggetto non controllato 1200 V SiC MOSFET
2D hole gas (2DHG)
4H-SiC
4H-SiC MESFET
active layers
active noise control
AlGaN/GaN HEMTs
avalanche photodiode
average subthreshold swing
band-to-band tunnelling (BTBT)
bandwidth
bias temperature instabilities (BTI)
body diode
circuit design
CMOS
CMOS compatible technology
CMOS device
compact circuit style
confinement effective mass
control gate
core-insulator
defects
device processing
device reliability
DGSOI
diamond
dielectrics
direct source-to-drain tunneling
electron trapping
F-N plot
field effect transistor
field emission
FinFET
FinFETs
flexible transistors
floating gate transistor
GAA
GaN
gate structures
gate-all-around
germanium-around-source gate-all-around TFET (GAS GAA TFET)
grain boundary
HEMT
high gate
high responsivity
IMRD structure
integrated circuits
Landauer-Büttiker formalism
mean free path
MESFET
metal oxides
MoO3
mosfet
MOSFET
multi-recessed buffer
multi-subband ensemble Monte Carlo
multiple epitaxial layers
n/a
nanocomposites
nanoscale
nanoscale transistor
nanotransistor
nanowire
new device
non-equilibrium Green's function
non-radiative multiphonon (NMP) model
one-transistor dynamic random-access memory (1T-DRAM)
oxide defects
particle trajectory model
polymers
polysilicon
power added efficiency
power added efficiency (PAE)
power density
power-added efficiency
prototype
pulse width
quantum current
quantum transport
R-matrix method
random telegraph noise
reliability
silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)
silicon photodiode
silvaco simulation
simulation
single-defect spectroscopy
SiO2
solid state circuit breaker (SSCB)
space-charge-limited currents
specific on-resistance
SPICE model
split-gate trench power MOSFET
surface transfer doping
surge reliability
T-channel
thermal simulation
three-input transistor
time-dependent defect spectroscopy
transient channel temperature
transport effective mass
tunnelling field-effect transistor (TFET)
V2O5
vacuum channel
vertical air-channel diode
vertical transistor
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910580205803321
Filipovic Lado  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui