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Computational Quantum Physics and Chemistry of Nanomaterials
| Computational Quantum Physics and Chemistry of Nanomaterials |
| Autore | Šob Mojmír |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (198 p.) |
| Soggetto topico | Research & information: general |
| Soggetto non controllato |
BTF
TATB CL-20 cocrystal energetic materials shock sensitivity large-scale ab initio molecular dynamics simulations AlN low-dimensional material atomic cluster electronic structure HSE06 hybrid functional CsPbBr3 CsPb2Br5 solvent polarity CTAB phase transition high-entropy alloys generalized stacking fault energy first-principles interfacial energy surface energy nanoparticles gold ab initio molecular mechanics fcc Ni tilt Σ5(210) grain boundary vacancy Si and Al impurity grain boundary energy segregation energy defects binding energies magnetism ferroelectricity SnTe nanoribbon nanoflakes critical size density-functional theory thermodynamics silver decahedron excess energy ab initio calculations dye-sensitized solar cells azobenzene density functional theory topological insulators magnetic doping defects environment and health first-principles physics DFT hazardous gas |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557583503321 |
Šob Mojmír
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Metal Matrix Composites
| Metal Matrix Composites |
| Autore | Gupta Manoj |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (102 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
Mg-3Al-0.4Ce alloy
nano ZnO particles uniform distribution strength titanium matrix composite constitutive model interfacial debonding high temperature elastoplastic properties nano-sized SiCp aluminum matrix composites mechanical properties microstructures Mg-Al-RE alloy magnesium alloy damping Al11La3 phase nanosize reinforcement spark plasma sintering Cu-TiC in-situ composites mechanical milling iron aluminum alloys cold/hot PM compressibility factor wear resistance Al-Zn-Cr alloys powder metallurgy strengthening extrusion dry sliding wear synthesis of core-shell metal nanoparticles Cu@Ag composite nanoparticle metal mesh screen printing touch screen panel tungsten composites tungsten-fibre-net reinforcement tensile strength metal matrix composites nickel aluminum carbon nanotubes ultrasonication microstructural characterization Magnesium Sm2O3 nanoparticles compression properties microstructure ignition carbon nanotube nanocomposite dispersion interfacial adhesion phase transformation physicomechanical properties nanoparticles metal matrix nanocomposite (MMNC) AlN magnesium alloy AM60 strengthening mechanisms in situ titanium composites microstructure analysis TiB precipitates 7075 Al alloy reduced graphene oxide strengthening mechanism metal matrix nanocomposite copper graphene thermal expansion coefficient thermal conductivity electrical resistance thixoforging magnesium-based composite fracture magnesium-alloy-based composite Halpin-Tsai-Kardos model deformation behavior composite strengthening fracture behavior magnesium high entropy alloy composite hardness compressive properties tricalcium phosphate compression corrosion |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557714403321 |
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Gupta Manoj
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Micro- and Nanotechnology of Wide Bandgap Semiconductors
| Micro- and Nanotechnology of Wide Bandgap Semiconductors |
| Autore | Piotrowska Anna B |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (114 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
GaN HEMT
self-heating effect microwave power amplifier thermal impedance thermal time constant thermal equivalent circuit GaN crystal growth ammonothermal method HVPE ion implantation gallium nitride thermodynamics ultra-high-pressure annealing diffusion diffusion coefficients molecular beam epitaxy nitrides laser diode tunnel junction LTE AlN AlGaN/GaN interface state density conductance-frequency MISHEMT gallium nitride nanowires polarity Kelvin probe force microscopy selective area growth selective epitaxy AlGaN/GaN heterostructures edge effects effective diffusion length MOVPE nanowires AlGaN LEDs growth polarity |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557343303321 |
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Piotrowska Anna B
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanostructured Light-Emitters
| Nanostructured Light-Emitters |
| Autore | Nguyen Hieu Pham Trung |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (208 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
Liquid phase deposition method
InGaN/GaN light-emitting diode silver nanoparticle zinc oxide localized surface plasmon β-Ga2O3 III-Nitrides monoclinic hexagonal arrangement high-power current distribution vertical structure LED blue organic light emitting diodes transport materials host-dopant nanoparticles luminescence non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals photoluminescence properties tunable fluorescence emission one-pot approach perovskite light-emitting diodes three-step spin coating hole transport layer PEDOT:PSS/MoO3-ammonia composite μLED displays μLEDs GaN nanowires core-shell structure ultraviolet (UV) emitter surface plasmon Pt nanoparticles hole-pattern photon emission efficiency distributed Bragg reflectors gratings GaN-based lasers linewidth epsilon-near-zero wideband absorber plasmon mode Brewster mode visible light communication photonic crystals flip-chip LED Purcell effect light extraction efficiency nanostructured materials surface/interface properties nanostructured light-emitting devices physical mechanism surface/interface modification surface/interface control micro-scale light emitting diode sapphire substrate encapsulation compound semiconductor nanostructure ultraviolet light-emitting diode (LED) molecular beam epitaxy GaN AlN photonic nanojet photonic nanojet array self-assembly template-assisted self-assembly patterning efficiency III-nitride thin film nanostructures ultraviolet emitters surface passivation luminescence intensity |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557105503321 |
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Nguyen Hieu Pham Trung
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
| Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II |
| Autore | Verzellesi Giovanni |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (320 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology Energy industries & utilities |
| Soggetto non controllato |
energy storage system
power conditioning system silicon carbide vanadium redox flow batteries AlGaN/GaN SiC high electron mobility transistor Schottky barrier diode breakdown field noise charge traps radio frequency wide-bandgap (WBG) gallium nitride (GaN) silicon carbide (SiC) high electron mobility transistor (HEMT) metal-oxide-semiconductor field effect transistor (MOSFET) driving technology nickel oxide annealing temperature crystallite size optical band gap electrochromic device indium oxide thin film solution method plasma surface treatment bias stability aluminum nitride Schottky barrier diodes radio frequency sputtering X-ray diffraction X-ray photoelectron spectroscopy piezoelectric micromachined ultrasonic transducers ranging time of flight (TOF) time to digital converter circuit (TDC) AlGaN/GaN heterojunction p-GaN gate unidirectional operation rectifying electrode first-principles density functional theory pure β-Ga2O3 Sr-doped β-Ga2O3 p-type doping band structure density of states optical absorption AlN buffer layer NH3 growth interruption strain relaxation GaN-based LED low defect density gate bias modulation palladium catalyst gallium nitride nitrogen dioxide gas sensor laser micromachining sapphire AlGaN/GaN heterostructures high-electron mobility devices p-GaN gate HEMT normally off low-resistance SiC substrate temperature high electron-mobility transistor (HEMT) equivalent-circuit modeling microwave frequency scattering-parameter measurements GaN MIS-HEMTs fabrication threshold voltage stability supercritical technology GaN power HEMTs breakdown voltage current collapse compensation ratio auto-compensation carbon doping HVPE AlN high-temperature buffer layer nitridation high-electron mobility transistor heterogeneous integration SOI QST crystal growth cubic and hexagonal structure blue and yellow luminescence electron lifetime wafer dicing stealth dicing laser thermal separation dry processing laser processing wide bandgap semiconductor photovoltaic module digital signal processor synchronous buck converter polar semi-polar non-polar magnetron sputtering HTA GaN-HEMT mesa structures 2DEG X-ray sensor X-ray imaging |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910576886103321 |
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Verzellesi Giovanni
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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