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Computational Quantum Physics and Chemistry of Nanomaterials
| Computational Quantum Physics and Chemistry of Nanomaterials |
| Autore | Šob Mojmír |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (198 p.) |
| Soggetto topico | Research & information: general |
| Soggetto non controllato |
ab initio
ab initio calculations AlN atomic cluster azobenzene BTF CL-20 cocrystal critical size CsPb2Br5 CsPbBr3 CTAB decahedron defects defects binding energies density functional theory density-functional theory DFT dye-sensitized solar cells electronic structure energetic materials environment and health excess energy fcc Ni ferroelectricity first-principles first-principles physics generalized stacking fault energy gold grain boundary energy hazardous gas high-entropy alloys HSE06 hybrid functional interfacial energy large-scale ab initio molecular dynamics simulations low-dimensional material magnetic doping magnetism molecular mechanics n/a nanoflakes nanoparticles nanoribbon phase transition segregation energy shock sensitivity Si and Al impurity silver SnTe solvent polarity surface energy TATB thermodynamics tilt Σ5(210) grain boundary topological insulators vacancy |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557583503321 |
Šob Mojmír
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Metal Matrix Composites
| Metal Matrix Composites |
| Autore | Gupta Manoj |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 online resource (102 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
7075 Al alloy
Al-Zn-Cr alloys Al11La3 phase AlN aluminum aluminum matrix composites carbon nanotube carbon nanotubes cold/hot PM composite composite strengthening compressibility factor compression compression properties compressive properties constitutive model copper corrosion Cu-TiC Cu@Ag composite nanoparticle damping deformation behavior dispersion dry sliding wear elastoplastic properties electrical resistance extrusion fracture fracture behavior graphene Halpin-Tsai-Kardos model hardness high entropy alloy high temperature ignition in situ titanium composites in-situ composites interfacial adhesion interfacial debonding iron aluminum alloys magnesium Magnesium magnesium alloy magnesium alloy AM60 magnesium-alloy-based composite magnesium-based composite mechanical milling mechanical properties metal matrix composites metal matrix nanocomposite metal matrix nanocomposite (MMNC) metal mesh Mg-3Al-0.4Ce alloy Mg-Al-RE alloy microstructural characterization microstructure microstructure analysis microstructures n/a nano ZnO particles nano-sized SiCp nanocomposite nanoparticles nanosize reinforcement nickel phase transformation physicomechanical properties powder metallurgy reduced graphene oxide screen printing Sm2O3 nanoparticles spark plasma sintering strength strengthening strengthening mechanism strengthening mechanisms synthesis of core-shell metal nanoparticles tensile strength thermal conductivity thermal expansion coefficient thixoforging TiB precipitates titanium matrix composite touch screen panel tricalcium phosphate tungsten composites tungsten-fibre-net reinforcement ultrasonication uniform distribution wear resistance |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557714403321 |
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Gupta Manoj
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Micro- and Nanotechnology of Wide Bandgap Semiconductors
| Micro- and Nanotechnology of Wide Bandgap Semiconductors |
| Autore | Piotrowska Anna B |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (114 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
AlGaN
AlGaN/GaN AlGaN/GaN heterostructures AlN ammonothermal method conductance-frequency crystal growth diffusion diffusion coefficients edge effects effective diffusion length gallium nitride gallium nitride nanowires GaN GaN HEMT growth polarity HVPE interface state density ion implantation Kelvin probe force microscopy laser diode LEDs LTE microwave power amplifier MISHEMT molecular beam epitaxy MOVPE n/a nanowires nitrides polarity selective area growth selective epitaxy self-heating effect thermal equivalent circuit thermal impedance thermal time constant thermodynamics tunnel junction ultra-high-pressure annealing |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557343303321 |
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Piotrowska Anna B
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanostructured Light-Emitters
| Nanostructured Light-Emitters |
| Autore | Nguyen Hieu Pham Trung |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 online resource (208 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
AlN
blue organic light emitting diodes Brewster mode compound semiconductor core-shell structure current distribution distributed Bragg reflectors encapsulation epsilon-near-zero flip-chip LED GaN GaN nanowires GaN-based lasers gratings hexagonal arrangement high-power hole transport layer hole-pattern host-dopant III-nitride thin film III-Nitrides InGaN/GaN light-emitting diode light extraction efficiency light-emitting diode (LED) linewidth Liquid phase deposition method localized surface plasmon luminescence luminescence intensity micro-scale light emitting diode molecular beam epitaxy monoclinic n/a nanoparticles nanostructure nanostructured light-emitting devices nanostructured materials nanostructures non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals one-pot approach patterning efficiency PEDOT:PSS/MoO3-ammonia composite perovskite light-emitting diodes photoluminescence properties photon emission efficiency photonic crystals photonic nanojet photonic nanojet array physical mechanism plasmon mode Pt nanoparticles Purcell effect sapphire substrate self-assembly silver nanoparticle surface passivation surface plasmon surface/interface control surface/interface modification surface/interface properties template-assisted self-assembly three-step spin coating transport materials tunable fluorescence emission ultraviolet ultraviolet (UV) emitter ultraviolet emitters vertical structure LED visible light communication wideband absorber zinc oxide β-Ga2O3 μLED displays μLEDs |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557105503321 |
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Nguyen Hieu Pham Trung
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
| Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II |
| Autore | Verzellesi Giovanni |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (320 p.) |
| Soggetto topico |
Energy industries and utilities
History of engineering and technology Technology: general issues |
| Soggetto non controllato |
2DEG
AlGaN/GaN AlGaN/GaN heterojunction AlGaN/GaN heterostructures AlN AlN buffer layer aluminum nitride annealing temperature auto-compensation band structure bias stability blue and yellow luminescence breakdown field breakdown voltage buffer layer carbon doping charge traps compensation ratio crystal growth crystallite size cubic and hexagonal structure current collapse density functional theory density of states digital signal processor driving technology dry processing electrochromic device electron lifetime energy storage system equivalent-circuit modeling fabrication first-principles gallium nitride gallium nitride (GaN) GaN GaN power HEMTs GaN-based LED GaN-HEMT mesa structures gate bias modulation heterogeneous integration high electron mobility transistor high electron mobility transistor (HEMT) high electron-mobility transistor (HEMT) high-electron mobility devices high-electron mobility transistor high-temperature HTA HVPE indium oxide thin film laser micromachining laser processing laser thermal separation low defect density low-resistance SiC substrate magnetron sputtering metal-oxide-semiconductor field effect transistor (MOSFET) microwave frequency MIS-HEMTs n/a NH3 growth interruption nickel oxide nitridation nitrogen dioxide gas sensor noise non-polar normally off optical absorption optical band gap p-GaN gate p-GaN gate HEMT p-type doping palladium catalyst photovoltaic module piezoelectric micromachined ultrasonic transducers plasma surface treatment polar power conditioning system pure β-Ga2O3 QST radio frequency radio frequency sputtering ranging rectifying electrode sapphire scattering-parameter measurements Schottky barrier diode Schottky barrier diodes semi-polar SiC silicon carbide silicon carbide (SiC) SOI solution method Sr-doped β-Ga2O3 stealth dicing strain relaxation supercritical technology synchronous buck converter temperature threshold voltage stability time of flight (TOF) time to digital converter circuit (TDC) unidirectional operation vanadium redox flow batteries wafer dicing wide bandgap semiconductor wide-bandgap (WBG) X-ray diffraction X-ray imaging X-ray photoelectron spectroscopy X-ray sensor |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910576886103321 |
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Verzellesi Giovanni
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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