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AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
| AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications |
| Autore | Kühn Jutta |
| Pubbl/distr/stampa | KIT Scientific Publishing, 2011 |
| Descrizione fisica | 1 online resource (XI, 230 p. p.) |
| Collana | Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
AlGaN/GaN HEMT
MMIC design power amplifier power-added efficiency X-band |
| ISBN | 1000021579 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346908503321 |
Kühn Jutta
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| KIT Scientific Publishing, 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Challenges and New Trends in Power Electronic Devices Reliability
| Challenges and New Trends in Power Electronic Devices Reliability |
| Autore | Falco Pasquale De |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (207 p.) |
| Soggetto topico |
Energy industries & utilities
Technology: general issues |
| Soggetto non controllato |
AC motor drive
AC-coupled configuration accelerated test AlGaN/GaN HEMT availability battery bond wire cables capacitors cascode structure condition monitoring cracks current harmonics DC-coupled configuration DC/AC converter electromagnetic launching field failure monitoring fusion algorithm heavy-ion irradiation experiment high-light mode high-power thyristors IGBT reliability junction temperature LED lifetime prediction loss modeling low-light mode maintenance microgrid inverter mission profile module transconductance multi-chip IGBT module n/a online evaluation photovoltaic system photovoltaic systems power device power electronic converters power electronics power MOSFET power system faults PPS reliability reverse recovery currents segmented LSTM sensor lamp SiC MOSFET single event effects solder joint technology computer-aided design simulation temperature calibration thermal cycling test voltage harmonics |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910674042803321 |
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Falco Pasquale De
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo
| Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo |
| Autore | Seo Jung-Hun |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
ohmic contact
MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I-V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) |
| ISBN |
9783038978435
3038978434 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346846903321 |
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Seo Jung-Hun
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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