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Micro- and Nanotechnology of Wide Bandgap Semiconductors
Micro- and Nanotechnology of Wide Bandgap Semiconductors
Autore Piotrowska Anna B
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 electronic resource (114 p.)
Soggetto topico Technology: general issues
Soggetto non controllato GaN HEMT
self-heating effect
microwave power amplifier
thermal impedance
thermal time constant
thermal equivalent circuit
GaN
crystal growth
ammonothermal method
HVPE
ion implantation
gallium nitride
thermodynamics
ultra-high-pressure annealing
diffusion
diffusion coefficients
molecular beam epitaxy
nitrides
laser diode
tunnel junction
LTE
AlN
AlGaN/GaN
interface state density
conductance-frequency
MISHEMT
gallium nitride nanowires
polarity
Kelvin probe force microscopy
selective area growth
selective epitaxy
AlGaN/GaN heterostructures
edge effects
effective diffusion length
MOVPE
nanowires
AlGaN
LEDs
growth polarity
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557343303321
Piotrowska Anna B  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Nanoelectronic Materials, Devices and Modeling
Nanoelectronic Materials, Devices and Modeling
Autore Li Qiliang
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2019
Descrizione fisica 1 electronic resource (242 p.)
Soggetto non controllato quantum mechanical
neuromorphic computation
off-current (Ioff)
double-gate tunnel field-effect-transistor
topological insulator
back current blocking layer (BCBL)
CMOS power amplifier IC
information integration
distributed Bragg
spike-timing-dependent plasticity
electron affinity
enhancement-mode
current collapse
gallium nitride (GaN)
band-to-band tunneling
vertical field-effect transistor (VFET)
ionic liquid
luminescent centres
thermal coupling
vision localization
PC1D
UAV
ZnO/Si
dual-switching transistor
memristor
field-effect transistor
higher order synchronization
shallow trench isolation (STI)
memristive device
on-current (Ion)
low voltage
reflection transmision method
dielectric layer
source/drain (S/D)
high efficiency
nanostructure synthesis
InAlN/GaN heterostructure
supercapacitor
high-electron mobility transistor (HEMTs)
heterojunction
p-GaN
recessed channel array transistor (RCAT)
gate field effect
charge injection
saddle FinFET (S-FinFET)
L-shaped tunnel field-effect-transistor
conductivity
energy storage
hierarchical
PECVD
sample grating
MISHEMT
bistability
threshold voltage (VTH)
bandgap tuning
oscillatory neural networks
UV irradiation
Mott transition
third harmonic tuning
topological magnetoelectric effect
cross-gain modulation
2D material
solar cells
silicon on insulator (SOI)
Green's function
optoelectronic devices
semiconductor optical amplifier
ZnO films
graphene
AlGaN/GaN
polarization effect
two-photon process
conductive atomic force microscopy (cAFM)
2DEG density
vanadium dioxide
interface traps
potential drop width (PDW)
pattern recognition
drain-induced barrier lowering (DIBL)
atomic layer deposition (ALD)
normally off power devices
gate-induced drain leakage (GIDL)
insulator-metal transition (IMT)
zinc oxide
synaptic device
subthreshold slope (SS)
landing
silicon
corner-effect
conditioned reflex
quantum dot
gallium nitride
bismuth ions
conduction band offset
variational form
ISBN 3-03921-226-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910346664303321
Li Qiliang  
MDPI - Multidisciplinary Digital Publishing Institute, 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Wide Bandgap Based Devices : Design, Fabrication and Applications
Wide Bandgap Based Devices : Design, Fabrication and Applications
Autore Medjdoub Farid
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 electronic resource (242 p.)
Soggetto topico Technology: general issues
Soggetto non controllato GaN
high-electron-mobility transistor (HEMT)
ultra-wide band gap
GaN-based vertical-cavity surface-emitting laser (VCSEL)
composition-graded AlxGa1−xN electron blocking layer (EBL)
electron leakage
GaN laser diode
distributed feedback (DFB)
surface gratings
sidewall gratings
AlGaN/GaN
proton irradiation
time-dependent dielectric breakdown (TDDB)
reliability
normally off
power cycle test
SiC micro-heater chip
direct bonded copper (DBC) substrate
Ag sinter paste
wide band-gap (WBG)
thermal resistance
amorphous InGaZnO
thin-film transistor
nitrogen-doping
buried-channel
stability
4H-SiC
turn-off loss
ON-state voltage
breakdown voltage (BV)
IGBT
wide-bandgap semiconductor
high electron mobility transistors
vertical gate structure
normally-off operation
gallium nitride
asymmetric multiple quantum wells
barrier thickness
InGaN laser diodes
optical absorption loss
electron leakage current
wide band gap semiconductors
numerical simulation
terahertz Gunn diode
grooved-anode diode
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs)
vertical breakdown voltage
buffer trapping effect
gallium nitride (GaN)
power switching device
active power filter (APF)
power quality (PQ)
metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT)
recessed gate
double barrier
high-electron-mobility transistors
copper metallization
millimeter wave
wide bandgap semiconductors
flexible devices
silver nanoring
silver nanowire
polyol method
cosolvent
tungsten trioxide film
spin coating
optical band gap
morphology
electrochromism
self-align
hierarchical nanostructures
ZnO nanorod/NiO nanosheet
photon extraction efficiency
photonic emitter
wideband
HEMT
power amplifier
jammer system
GaN 5G
high electron mobility transistors (HEMT)
new radio
RF front-end
AESA radars
transmittance
distortions
optimization
GaN-on-GaN
schottky barrier diodes
high-energy α-particle detection
low voltage
thick depletion width detectors
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Wide Bandgap Based Devices
Record Nr. UNINA-9910557351703321
Medjdoub Farid  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
Autore Verzellesi Giovanni
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 electronic resource (320 p.)
Soggetto topico Technology: general issues
History of engineering & technology
Energy industries & utilities
Soggetto non controllato energy storage system
power conditioning system
silicon carbide
vanadium redox flow batteries
AlGaN/GaN
SiC
high electron mobility transistor
Schottky barrier diode
breakdown field
noise
charge traps
radio frequency
wide-bandgap (WBG)
gallium nitride (GaN)
silicon carbide (SiC)
high electron mobility transistor (HEMT)
metal-oxide-semiconductor field effect transistor (MOSFET)
driving technology
nickel oxide
annealing temperature
crystallite size
optical band gap
electrochromic device
indium oxide thin film
solution method
plasma surface treatment
bias stability
aluminum nitride
Schottky barrier diodes
radio frequency sputtering
X-ray diffraction
X-ray photoelectron spectroscopy
piezoelectric micromachined ultrasonic transducers
ranging
time of flight (TOF)
time to digital converter circuit (TDC)
AlGaN/GaN heterojunction
p-GaN gate
unidirectional operation
rectifying electrode
first-principles
density functional theory
pure β-Ga2O3
Sr-doped β-Ga2O3
p-type doping
band structure
density of states
optical absorption
AlN buffer layer
NH3 growth interruption
strain relaxation
GaN-based LED
low defect density
gate bias modulation
palladium catalyst
gallium nitride
nitrogen dioxide gas sensor
laser micromachining
sapphire
AlGaN/GaN heterostructures
high-electron mobility devices
p-GaN gate HEMT
normally off
low-resistance SiC substrate
temperature
high electron-mobility transistor (HEMT)
equivalent-circuit modeling
microwave frequency
scattering-parameter measurements
GaN
MIS-HEMTs
fabrication
threshold voltage stability
supercritical technology
GaN power HEMTs
breakdown voltage
current collapse
compensation ratio
auto-compensation
carbon doping
HVPE
AlN
high-temperature
buffer layer
nitridation
high-electron mobility transistor
heterogeneous integration
SOI
QST
crystal growth
cubic and hexagonal structure
blue and yellow luminescence
electron lifetime
wafer dicing
stealth dicing
laser thermal separation
dry processing
laser processing
wide bandgap semiconductor
photovoltaic module
digital signal processor
synchronous buck converter
polar
semi-polar
non-polar
magnetron sputtering
HTA
GaN-HEMT mesa structures
2DEG
X-ray sensor
X-ray imaging
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Wide Bandgap Based Devices
Record Nr. UNINA-9910576886103321
Verzellesi Giovanni  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Wide Bandgap Semiconductor Based Micro/Nano Devices
Wide Bandgap Semiconductor Based Micro/Nano Devices
Autore Seo Jung-Hun
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2019
Descrizione fisica 1 electronic resource (138 p.)
Soggetto non controllato ohmic contact
MESFET
optical band gap
wide-bandgap semiconductor
annealing temperature
junction termination extension (JTE)
channel length modulation
silicon carbide (SiC)
amorphous InGaZnO (a-IGZO)
light output power
GaN
electrochromism
large signal performance
passivation layer
4H-SiC
positive gate bias stress (PGBS)
asymmetric power combining
ultrahigh upper gate height
high electron mobility transistors
space application
gallium nitride (GaN)
phase balance
edge termination
distributed Bragg reflector
cathode field plate (CFP)
ammonothermal GaN
anode field plate (AFP)
W band
GaN high electron mobility transistor (HEMT)
1T DRAM
growth of GaN
tungsten trioxide film
thin-film transistor (TFT)
micron-sized patterned sapphire substrate
power added efficiency
T-anode
analytical model
AlGaN/GaN
harsh environment
high-temperature operation
amplitude balance
buffer layer
characteristic length
Ku-band
DIBL effect
I-V kink effect
flip-chip light-emitting diodes
high electron mobility transistors (HEMTs)
power amplifier
sidewall GaN
external quantum efficiency
breakdown voltage (BV)
threshold voltage (Vth) stability
regrown contact
AlGaN/GaN HEMT
TCAD
high electron mobility transistor (HEMT)
ISBN 3-03897-843-4
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910346846903321
Seo Jung-Hun  
MDPI - Multidisciplinary Digital Publishing Institute, 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui