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Feature Papers in Electronic Materials Section
| Feature Papers in Electronic Materials Section |
| Autore | Roccaforte Fabrizio |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (438 p.) |
| Soggetto topico |
Energy industries and utilities
History of engineering and technology Technology: general issues |
| Soggetto non controllato |
2D materials
3C-SiC 4H-SiC aluminum oxide arrhythmia detection binary oxides bulk growth cardiovascular monitoring charge removal rate chemical vapour deposition compensation compliant substrates cubic silicon carbide CVD CVD graphene defects degradation diamond diodes doping electrical characterization electron microscopy energy electronics epitaxial lift-off Fabry-Perot filter flexible bioelectronics flexible electronics Ga2O3 GaAs gallium oxide GaN GaN-on-diamond gate dielectric graphene absorption HEMT heteroepitaxy high-throughput method high-κ dielectrics hybrid integration InGaAs channel instability insulators interface iron-based superconductor irradiation temperature KOH etching material printing MOS MoS2 MPCVD growth nanomanufacturing nanomembrane ohmic contact optical fibers power electronics proton and electron irradiation pulsed laser deposition quasi-vertical GaN radiation effects radiation hardness radio frequency sputtering reliability Schottky barrier Schottky diodes silica point defects silicon carbide SIMS simulation soft biosensors spinel stacking faults stress thermal management thin film threshold voltage Ti3SiC2 transistors transmission electron microscopy trapping traps trench MOS ultra-wide bandgap van der Waals vertical GaN wearable sensors wide band gap semiconductors ZnGa2O4 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557620303321 |
Roccaforte Fabrizio
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (352 p.) |
| Soggetto topico |
Mathematics & science
Research & information: general |
| Soggetto non controllato |
1200 V SiC MOSFET
2D hole gas (2DHG) 4H-SiC 4H-SiC MESFET active layers active noise control AlGaN/GaN HEMTs avalanche photodiode average subthreshold swing band-to-band tunnelling (BTBT) bandwidth bias temperature instabilities (BTI) body diode circuit design CMOS CMOS compatible technology CMOS device compact circuit style confinement effective mass control gate core-insulator defects device processing device reliability DGSOI diamond dielectrics direct source-to-drain tunneling electron trapping F-N plot field effect transistor field emission FinFET FinFETs flexible transistors floating gate transistor GAA GaN gate structures gate-all-around germanium-around-source gate-all-around TFET (GAS GAA TFET) grain boundary HEMT high gate high responsivity IMRD structure integrated circuits Landauer-Büttiker formalism mean free path MESFET metal oxides MoO3 mosfet MOSFET multi-recessed buffer multi-subband ensemble Monte Carlo multiple epitaxial layers n/a nanocomposites nanoscale nanoscale transistor nanotransistor nanowire new device non-equilibrium Green's function non-radiative multiphonon (NMP) model one-transistor dynamic random-access memory (1T-DRAM) oxide defects particle trajectory model polymers polysilicon power added efficiency power added efficiency (PAE) power density power-added efficiency prototype pulse width quantum current quantum transport R-matrix method random telegraph noise reliability silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) silicon photodiode silvaco simulation simulation single-defect spectroscopy SiO2 solid state circuit breaker (SSCB) space-charge-limited currents specific on-resistance SPICE model split-gate trench power MOSFET surface transfer doping surge reliability T-channel thermal simulation three-input transistor time-dependent defect spectroscopy transient channel temperature transport effective mass tunnelling field-effect transistor (TFET) V2O5 vacuum channel vertical air-channel diode vertical transistor |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
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Filipovic Lado
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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SiC based Miniaturized Devices
| SiC based Miniaturized Devices |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 online resource (170 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
3C-SiC
4H-SiC 4H-SiC, epitaxial layer 6H-SiC aluminum nitride amorphous SiC Berkovich indenter bulge test bulk micromachining circular membrane cleavage strength critical depth of cut critical load deep level transient spectroscopy (DLTS) deformation doped SiC electrochemical characterization electrochemical etching electron beam induced current spectroscopy (EBIC) epitaxial growth FEM grazing incidence X-ray diffraction (GIXRD) high-power impulse magnetron sputtering (HiPIMS) high-temperature converters indentation material removal mechanisms MEA mechanical properties MEMS devices MESFET microelectrode array microstrip detector n-type n/a nanoscratching negative gate-source voltage spike neural implant neural interface neural probe p-type PAE point defects power electronics power module pulse height spectroscopy (PHS) radiation detector Raman spectroscopy residual stress Rutherford backscattering spectrometry (RBS) Schottky barrier semiconductor radiation detector SiC SiC power electronic devices silicon carbide simulation thermally stimulated current spectroscopy (TSC) thin film vibrometry Young's modulus |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557498703321 |
| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices : Design, Fabrication and Applications
| Wide Bandgap Based Devices : Design, Fabrication and Applications |
| Autore | Medjdoub Farid |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (242 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
4H-SiC
active power filter (APF) AESA radars Ag sinter paste AlGaN/GaN amorphous InGaZnO asymmetric multiple quantum wells barrier thickness breakdown voltage (BV) buffer trapping effect buried-channel composition-graded AlxGa1−xN electron blocking layer (EBL) copper metallization cosolvent direct bonded copper (DBC) substrate distortions distributed feedback (DFB) double barrier electrochromism electron leakage electron leakage current flexible devices gallium nitride gallium nitride (GaN) Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) GaN GaN 5G GaN laser diode GaN-based vertical-cavity surface-emitting laser (VCSEL) GaN-on-GaN grooved-anode diode HEMT hierarchical nanostructures high electron mobility transistors high electron mobility transistors (HEMT) high-electron-mobility transistor (HEMT) high-electron-mobility transistors high-energy α-particle detection IGBT InGaN laser diodes jammer system low voltage metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) millimeter wave morphology n/a new radio nitrogen-doping normally off normally-off operation numerical simulation ON-state voltage optical absorption loss optical band gap optimization photon extraction efficiency photonic emitter polyol method power amplifier power cycle test power quality (PQ) power switching device proton irradiation recessed gate reliability RF front-end schottky barrier diodes self-align SiC micro-heater chip sidewall gratings silver nanoring silver nanowire spin coating stability surface gratings terahertz Gunn diode thermal resistance thick depletion width detectors thin-film transistor time-dependent dielectric breakdown (TDDB) transmittance tungsten trioxide film turn-off loss ultra-wide band gap vertical breakdown voltage vertical gate structure wide band gap semiconductors wide band-gap (WBG) wide bandgap semiconductors wide-bandgap semiconductor wideband ZnO nanorod/NiO nanosheet |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910557351703321 |
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Medjdoub Farid
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo
| Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo |
| Autore | Seo Jung-Hun |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
ohmic contact
MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I-V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) |
| ISBN |
9783038978435
3038978434 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346846903321 |
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Seo Jung-Hun
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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