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Feature Papers in Electronic Materials Section
| Feature Papers in Electronic Materials Section |
| Autore | Roccaforte Fabrizio |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (438 p.) |
| Soggetto topico |
Energy industries and utilities
History of engineering and technology Technology: general issues |
| Soggetto non controllato |
2D materials
3C-SiC 4H-SiC aluminum oxide arrhythmia detection binary oxides bulk growth cardiovascular monitoring charge removal rate chemical vapour deposition compensation compliant substrates cubic silicon carbide CVD CVD graphene defects degradation diamond diodes doping electrical characterization electron microscopy energy electronics epitaxial lift-off Fabry-Perot filter flexible bioelectronics flexible electronics Ga2O3 GaAs gallium oxide GaN GaN-on-diamond gate dielectric graphene absorption HEMT heteroepitaxy high-throughput method high-κ dielectrics hybrid integration InGaAs channel instability insulators interface iron-based superconductor irradiation temperature KOH etching material printing MOS MoS2 MPCVD growth nanomanufacturing nanomembrane ohmic contact optical fibers power electronics proton and electron irradiation pulsed laser deposition quasi-vertical GaN radiation effects radiation hardness radio frequency sputtering reliability Schottky barrier Schottky diodes silica point defects silicon carbide SIMS simulation soft biosensors spinel stacking faults stress thermal management thin film threshold voltage Ti3SiC2 transistors transmission electron microscopy trapping traps trench MOS ultra-wide bandgap van der Waals vertical GaN wearable sensors wide band gap semiconductors ZnGa2O4 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557620303321 |
Roccaforte Fabrizio
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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SiC based Miniaturized Devices
| SiC based Miniaturized Devices |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 online resource (170 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
3C-SiC
4H-SiC 4H-SiC, epitaxial layer 6H-SiC aluminum nitride amorphous SiC Berkovich indenter bulge test bulk micromachining circular membrane cleavage strength critical depth of cut critical load deep level transient spectroscopy (DLTS) deformation doped SiC electrochemical characterization electrochemical etching electron beam induced current spectroscopy (EBIC) epitaxial growth FEM grazing incidence X-ray diffraction (GIXRD) high-power impulse magnetron sputtering (HiPIMS) high-temperature converters indentation material removal mechanisms MEA mechanical properties MEMS devices MESFET microelectrode array microstrip detector n-type n/a nanoscratching negative gate-source voltage spike neural implant neural interface neural probe p-type PAE point defects power electronics power module pulse height spectroscopy (PHS) radiation detector Raman spectroscopy residual stress Rutherford backscattering spectrometry (RBS) Schottky barrier semiconductor radiation detector SiC SiC power electronic devices silicon carbide simulation thermally stimulated current spectroscopy (TSC) thin film vibrometry Young's modulus |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557498703321 |
| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||