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Synthesis of zinc oxide by sol-gel method for photoelectrochemical cells / / Siti Salwa Alias, Ahmad Azmin Mohamad
Synthesis of zinc oxide by sol-gel method for photoelectrochemical cells / / Siti Salwa Alias, Ahmad Azmin Mohamad
Autore Alias Siti Salwa
Edizione [1st ed. 2014.]
Pubbl/distr/stampa Singapore : , : Springer, , 2014
Descrizione fisica 1 online resource (x, 52 pages) : illustrations (some color)
Disciplina 537.622
Collana SpringerBriefs in Materials
Soggetto topico Zinc oxide
Solar cells
ISBN 981-4560-77-4
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Introduction -- Nanocrystalline Metal Oxide Semiconductor -- ZnO: Effect of pH on Sol–Gel Process -- ZnO: Effect of Centrifugation and Storage on Sol–Gel Process -- ZnO: Photoelectrochemical Analysis.
Record Nr. UNINA-9910298648403321
Alias Siti Salwa  
Singapore : , : Springer, , 2014
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Zinc oxide [[electronic resource] ] : fundamentals, materials and device technology / / Hadis Morko ̇and Ümit Özgür
Zinc oxide [[electronic resource] ] : fundamentals, materials and device technology / / Hadis Morko ̇and Ümit Özgür
Autore Morko ̇ Hadis
Pubbl/distr/stampa Weinheim, : Wiley-VCH, c2009
Descrizione fisica 1 online resource (491 p.)
Disciplina 546.6612
621.38152
Altri autori (Persone) ÖzgürÜmit <1973->
Soggetto topico Zinc oxide
Zinc compounds
ISBN 1-282-69157-0
9786612691577
3-527-62394-9
3-527-62395-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Zinc Oxide: Fundamentals, Materials and Device Technology; Contents; Preface; 1 General Properties of ZnO; 1.1 Crystal Structure; 1.2 Lattice Parameters; 1.3 Electronic Band Structure; 1.4 Mechanical Properties; 1.5 Vibrational Properties; 1.6 Thermal Properties; 1.6.1 Thermal Expansion Coefficients; 1.6.2 Thermal Conductivity; 1.6.3 Specific Heat; 1.6.4 Pyroelectricity; 1.7 Electrical Properties of Undoped ZnO; 1.7.1 Low-Field Transport; 1.7.2 High-Field Transport; References; 2 ZnO Growth; 2.1 Bulk Growth; 2.2 Substrates; 2.2.1 Sapphire Substrates for ZnO Epitaxy
2.2.2 Other Substrates for ZnO Epitaxy (ScAlMgO4, CaF2, LiTaO3, LiNbO3)2.2.3 ZnO Homoepitaxy; 2.3 Epitaxial Growth Techniques; 2.3.1 RF Magnetron Sputtering; 2.3.2 Molecular Beam Epitaxy; 2.3.2.1 Growth on c-Plane Sapphire; 2.3.2.2 Growth on a-Plane Sapphire; 2.3.2.3 Growth on GaN Templates; 2.3.2.4 Growth on ZnO Substrates; 2.3.3 Pulsed Laser Deposition; 2.3.4 Chemical Vapor Deposition; References; 3 Optical Properties; 3.1 Optical Processes in Semiconductors; 3.1.1 Fundamentals of the Absorption and Emission Processes; 3.1.2 Optical Absorption and Emission in Semiconductors
3.1.3 Band-to-Band Transitions3.1.4 Excitonic Transitions; 3.2 Optical Transitions in ZnO; 3.2.1 Free Excitons and Polaritons; 3.2.2 Bound Excitons; 3.2.3 Two-Electron Satellites in PL; 3.2.4 DAP and Shallow Acceptor-Bound Exciton Transitions and LO-Phonon Replicas in PL; 3.2.5 Temperature-Dependent PL Measurements; 3.3 Defects in ZnO; 3.3.1 Predictions from First Principles; 3.3.2 Defect-Related Optical Transitions in ZnO; 3.3.2.1 Green Luminescence Band; 3.3.2.2 Yellow Luminescence Band; 3.3.2.3 Red Luminescence Band; 3.4 Refractive Index of ZnO and MgZnO; 3.5 Stimulated Emission in ZnO
3.5.1 Polycrystalline ZnO Films and''Random Lasers''3.5.2 Multiple Quantum Wells; 3.6 Recombination Dynamics in ZnO; 3.7 Nonlinear Optical Properties; 3.7.1 Second-Order Nonlinear Optical Properties; 3.7.1.1 Second-Harmonic Generation; 3.7.2 Third-Order Nonlinear Optical Properties; 3.7.2.1 Third Harmonic Generation; 3.7.3 Intensity Dependent Refractive Index; 3.7.4 Two-Photon Absorption; References; 4 Doping of ZnO; 4.1 n-Type Doping; 4.2 p-Type Doping; 4.2.1 Nitrogen Doping; 4.2.2 Codoping Method; 4.2.3 Other Dopants in Group V; 4.2.4 Concluding Remarks on Reliability of p-Type ZnO
References5 ZnO-Based Dilute Magnetic Semiconductors; 5.1 Doping with Transition Metals; 5.2 General Remarks About Dilute Magnetic Semiconductors; 5.3 Classification of Magnetic Materials; 5.4 A Brief Theory of Magnetization; 5.5 Dilute Magnetic Semiconductor Theoretical Aspects; 5.6 Measurements Techniques for Identification of Ferromagnetism; 5.7 Magnetic Interactions in DMS; 5.7.1 Carrier-Single Magnetic Ion Interaction; 5.7.2 Interaction Between Magnetic Ions; 5.7.2.1 Superexchange Mechanism; 5.7.2.2 Blombergen-Rowland Mechanism; 5.7.2.3 Double Exchange Interaction
5.7.2.4 Ruderman-Kittel-Kasuya-Yoshida Mechanism
Record Nr. UNINA-9910145448703321
Morko ̇ Hadis  
Weinheim, : Wiley-VCH, c2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Zinc oxide [[electronic resource] ] : fundamentals, materials and device technology / / Hadis Morko ̇and Ümit Özgür
Zinc oxide [[electronic resource] ] : fundamentals, materials and device technology / / Hadis Morko ̇and Ümit Özgür
Autore Morko ̇ Hadis
Pubbl/distr/stampa Weinheim, : Wiley-VCH, c2009
Descrizione fisica 1 online resource (491 p.)
Disciplina 546.6612
621.38152
Altri autori (Persone) ÖzgürÜmit <1973->
Soggetto topico Zinc oxide
Zinc compounds
ISBN 1-282-69157-0
9786612691577
3-527-62394-9
3-527-62395-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Zinc Oxide: Fundamentals, Materials and Device Technology; Contents; Preface; 1 General Properties of ZnO; 1.1 Crystal Structure; 1.2 Lattice Parameters; 1.3 Electronic Band Structure; 1.4 Mechanical Properties; 1.5 Vibrational Properties; 1.6 Thermal Properties; 1.6.1 Thermal Expansion Coefficients; 1.6.2 Thermal Conductivity; 1.6.3 Specific Heat; 1.6.4 Pyroelectricity; 1.7 Electrical Properties of Undoped ZnO; 1.7.1 Low-Field Transport; 1.7.2 High-Field Transport; References; 2 ZnO Growth; 2.1 Bulk Growth; 2.2 Substrates; 2.2.1 Sapphire Substrates for ZnO Epitaxy
2.2.2 Other Substrates for ZnO Epitaxy (ScAlMgO4, CaF2, LiTaO3, LiNbO3)2.2.3 ZnO Homoepitaxy; 2.3 Epitaxial Growth Techniques; 2.3.1 RF Magnetron Sputtering; 2.3.2 Molecular Beam Epitaxy; 2.3.2.1 Growth on c-Plane Sapphire; 2.3.2.2 Growth on a-Plane Sapphire; 2.3.2.3 Growth on GaN Templates; 2.3.2.4 Growth on ZnO Substrates; 2.3.3 Pulsed Laser Deposition; 2.3.4 Chemical Vapor Deposition; References; 3 Optical Properties; 3.1 Optical Processes in Semiconductors; 3.1.1 Fundamentals of the Absorption and Emission Processes; 3.1.2 Optical Absorption and Emission in Semiconductors
3.1.3 Band-to-Band Transitions3.1.4 Excitonic Transitions; 3.2 Optical Transitions in ZnO; 3.2.1 Free Excitons and Polaritons; 3.2.2 Bound Excitons; 3.2.3 Two-Electron Satellites in PL; 3.2.4 DAP and Shallow Acceptor-Bound Exciton Transitions and LO-Phonon Replicas in PL; 3.2.5 Temperature-Dependent PL Measurements; 3.3 Defects in ZnO; 3.3.1 Predictions from First Principles; 3.3.2 Defect-Related Optical Transitions in ZnO; 3.3.2.1 Green Luminescence Band; 3.3.2.2 Yellow Luminescence Band; 3.3.2.3 Red Luminescence Band; 3.4 Refractive Index of ZnO and MgZnO; 3.5 Stimulated Emission in ZnO
3.5.1 Polycrystalline ZnO Films and''Random Lasers''3.5.2 Multiple Quantum Wells; 3.6 Recombination Dynamics in ZnO; 3.7 Nonlinear Optical Properties; 3.7.1 Second-Order Nonlinear Optical Properties; 3.7.1.1 Second-Harmonic Generation; 3.7.2 Third-Order Nonlinear Optical Properties; 3.7.2.1 Third Harmonic Generation; 3.7.3 Intensity Dependent Refractive Index; 3.7.4 Two-Photon Absorption; References; 4 Doping of ZnO; 4.1 n-Type Doping; 4.2 p-Type Doping; 4.2.1 Nitrogen Doping; 4.2.2 Codoping Method; 4.2.3 Other Dopants in Group V; 4.2.4 Concluding Remarks on Reliability of p-Type ZnO
References5 ZnO-Based Dilute Magnetic Semiconductors; 5.1 Doping with Transition Metals; 5.2 General Remarks About Dilute Magnetic Semiconductors; 5.3 Classification of Magnetic Materials; 5.4 A Brief Theory of Magnetization; 5.5 Dilute Magnetic Semiconductor Theoretical Aspects; 5.6 Measurements Techniques for Identification of Ferromagnetism; 5.7 Magnetic Interactions in DMS; 5.7.1 Carrier-Single Magnetic Ion Interaction; 5.7.2 Interaction Between Magnetic Ions; 5.7.2.1 Superexchange Mechanism; 5.7.2.2 Blombergen-Rowland Mechanism; 5.7.2.3 Double Exchange Interaction
5.7.2.4 Ruderman-Kittel-Kasuya-Yoshida Mechanism
Record Nr. UNINA-9910830331703321
Morko ̇ Hadis  
Weinheim, : Wiley-VCH, c2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Zinc oxide [[electronic resource] ] : fundamentals, materials and device technology / / Hadis Morko ̇and Ümit Özgür
Zinc oxide [[electronic resource] ] : fundamentals, materials and device technology / / Hadis Morko ̇and Ümit Özgür
Autore Morko ̇ Hadis
Pubbl/distr/stampa Weinheim, : Wiley-VCH, c2009
Descrizione fisica 1 online resource (491 p.)
Disciplina 546.6612
621.38152
Altri autori (Persone) ÖzgürÜmit <1973->
Soggetto topico Zinc oxide
Zinc compounds
ISBN 1-282-69157-0
9786612691577
3-527-62394-9
3-527-62395-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Zinc Oxide: Fundamentals, Materials and Device Technology; Contents; Preface; 1 General Properties of ZnO; 1.1 Crystal Structure; 1.2 Lattice Parameters; 1.3 Electronic Band Structure; 1.4 Mechanical Properties; 1.5 Vibrational Properties; 1.6 Thermal Properties; 1.6.1 Thermal Expansion Coefficients; 1.6.2 Thermal Conductivity; 1.6.3 Specific Heat; 1.6.4 Pyroelectricity; 1.7 Electrical Properties of Undoped ZnO; 1.7.1 Low-Field Transport; 1.7.2 High-Field Transport; References; 2 ZnO Growth; 2.1 Bulk Growth; 2.2 Substrates; 2.2.1 Sapphire Substrates for ZnO Epitaxy
2.2.2 Other Substrates for ZnO Epitaxy (ScAlMgO4, CaF2, LiTaO3, LiNbO3)2.2.3 ZnO Homoepitaxy; 2.3 Epitaxial Growth Techniques; 2.3.1 RF Magnetron Sputtering; 2.3.2 Molecular Beam Epitaxy; 2.3.2.1 Growth on c-Plane Sapphire; 2.3.2.2 Growth on a-Plane Sapphire; 2.3.2.3 Growth on GaN Templates; 2.3.2.4 Growth on ZnO Substrates; 2.3.3 Pulsed Laser Deposition; 2.3.4 Chemical Vapor Deposition; References; 3 Optical Properties; 3.1 Optical Processes in Semiconductors; 3.1.1 Fundamentals of the Absorption and Emission Processes; 3.1.2 Optical Absorption and Emission in Semiconductors
3.1.3 Band-to-Band Transitions3.1.4 Excitonic Transitions; 3.2 Optical Transitions in ZnO; 3.2.1 Free Excitons and Polaritons; 3.2.2 Bound Excitons; 3.2.3 Two-Electron Satellites in PL; 3.2.4 DAP and Shallow Acceptor-Bound Exciton Transitions and LO-Phonon Replicas in PL; 3.2.5 Temperature-Dependent PL Measurements; 3.3 Defects in ZnO; 3.3.1 Predictions from First Principles; 3.3.2 Defect-Related Optical Transitions in ZnO; 3.3.2.1 Green Luminescence Band; 3.3.2.2 Yellow Luminescence Band; 3.3.2.3 Red Luminescence Band; 3.4 Refractive Index of ZnO and MgZnO; 3.5 Stimulated Emission in ZnO
3.5.1 Polycrystalline ZnO Films and''Random Lasers''3.5.2 Multiple Quantum Wells; 3.6 Recombination Dynamics in ZnO; 3.7 Nonlinear Optical Properties; 3.7.1 Second-Order Nonlinear Optical Properties; 3.7.1.1 Second-Harmonic Generation; 3.7.2 Third-Order Nonlinear Optical Properties; 3.7.2.1 Third Harmonic Generation; 3.7.3 Intensity Dependent Refractive Index; 3.7.4 Two-Photon Absorption; References; 4 Doping of ZnO; 4.1 n-Type Doping; 4.2 p-Type Doping; 4.2.1 Nitrogen Doping; 4.2.2 Codoping Method; 4.2.3 Other Dopants in Group V; 4.2.4 Concluding Remarks on Reliability of p-Type ZnO
References5 ZnO-Based Dilute Magnetic Semiconductors; 5.1 Doping with Transition Metals; 5.2 General Remarks About Dilute Magnetic Semiconductors; 5.3 Classification of Magnetic Materials; 5.4 A Brief Theory of Magnetization; 5.5 Dilute Magnetic Semiconductor Theoretical Aspects; 5.6 Measurements Techniques for Identification of Ferromagnetism; 5.7 Magnetic Interactions in DMS; 5.7.1 Carrier-Single Magnetic Ion Interaction; 5.7.2 Interaction Between Magnetic Ions; 5.7.2.1 Superexchange Mechanism; 5.7.2.2 Blombergen-Rowland Mechanism; 5.7.2.3 Double Exchange Interaction
5.7.2.4 Ruderman-Kittel-Kasuya-Yoshida Mechanism
Record Nr. UNINA-9910840846603321
Morko ̇ Hadis  
Weinheim, : Wiley-VCH, c2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Zinc oxide (ZnO) nanobridge-based sensor platform and functionalization for explosive sensing [[electronic resource]]
Zinc oxide (ZnO) nanobridge-based sensor platform and functionalization for explosive sensing [[electronic resource]]
Autore Mason Ashley D
Pubbl/distr/stampa Adelphi, MD : , : U.S. Army Research Laboratory, , [2011]
Descrizione fisica 1 online resource (vi, 14 pages) : illustrations (chiefly color)
Altri autori (Persone) PiekarskiBrett H
Collana ARL-TR
Soggetto topico Zinc oxide
Nanowires
Nanochemistry
Detectors
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Zinc oxide
Record Nr. UNINA-9910700214703321
Mason Ashley D  
Adelphi, MD : , : U.S. Army Research Laboratory, , [2011]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Zinc oxide materials for electronic and optoelectronic device applications [[electronic resource] /] / edited by Cole W. Litton, Donald C. Reynolds, Thomas C. Collins
Zinc oxide materials for electronic and optoelectronic device applications [[electronic resource] /] / edited by Cole W. Litton, Donald C. Reynolds, Thomas C. Collins
Pubbl/distr/stampa Chichester, West Sussex, : Wiley, 2011
Descrizione fisica 1 online resource (387 p.)
Disciplina 669/.52
Altri autori (Persone) LittonCole W
ReynoldsDonald C
CollinsThomas C. <1936->
Collana Wiley series in materials for electronic and optoelectronic applications
Soggetto topico Zinc oxide
Electronic apparatus and appliances - Materials
Optoelectronic devices - Materials
Soggetto genere / forma Electronic books.
ISBN 1-283-40526-1
9786613405265
1-119-99104-8
1-119-99103-X
Classificazione TEC021000
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Zinc Oxide Materials for Electronic and Optoelectronic Device Applications; Contents; Series Preface; Preface; List of Contributors; 1 Fundamental Properties of ZnO; 1.1 Introduction; 1.1.1 Overview; 1.1.2 Organization of Chapter; 1.2 Band Structure; 1.2.1 Valence and Conduction Bands; 1.3 Optical Properties; 1.3.1 Free and Bound Excitons; 1.3.2 Effects of External Magnetic Field on ZnO Excitons; 1.3.3 Strain Field; 1.3.4 Spatial Resonance Dispersion; 1.4 Electrical Properties; 1.4.1 Intrinsic Electronic Transport Properties; 1.4.2 n-type Doping and Donor Levels
1.4.3 p-type Doping and Dopability1.4.4 Schottky Barriers and Ohmic Contacts; 1.5 Band Gap Engineering; 1.5.1 Homovalent Heterostructures; 1.5.2 Heterovalent Heterostructures; 1.6 Spintronics; 1.7 Summary; References; 2 Optical Properties of ZnO; 2.1 Introduction; 2.2 Free Excitons; 2.3 Strain Splitting of the Γ5 and Γ6 Free Excitons in ZnO; 2.4 Photoluminescence from the Two Polar Faces of ZnO; 2.5 Bound-Exciton Complexes in ZnO; 2.6 Similarities in the Photoluminescence Mechanisms of ZnO and GaN
2.7 The Combined Effects of Screening and Band Gap Renormalization on the Energy of Optical Transitions in ZnO and GaN2.8 Closely Spaced Donor-Acceptor Pairs in ZnO; 2.9 Summary; References; 3 Electrical Transport Properties in Zinc Oxide; 3.1 Introduction; 3.2 Hall-Effect Analysis; 3.2.1 Single-Band Conduction; 3.2.2 Two-Band Mixed Conduction; 3.2.3 Conducting Surface Layers; 3.3 Donor States and n-type Doping; 3.3.1 Native Point Defects - Donors; 3.3.2 Substitutional Donors; 3.4 Hydrogen; 3.5 Acceptor States and p-type Doping; 3.5.1 Native Point Defects - Acceptors
3.5.2 Substitutional Acceptors3.6 Photoconductivity; 3.7 Summary; References; 4 ZnO Surface Properties and Schottky Contacts; 4.1 Historical Background of Schottky Contacts on ZnO; 4.1.1 ZnO Surface Effects; 4.1.2 Early Schottky Barrier Studies; 4.2 Recent Schottky Barrier Studies; 4.2.1 Surface Cleaning in Vacuum; 4.2.2 Surface Cleaning Effects on Impurities and Defects; 4.3 The Influence of Surface Preparation on Schottky Barriers; 4.4 The Influence of Defects on Schottky Barriers; 4.5 The Influence of ZnO Polarity on Schottky Barriers; 4.6 The Influence of Chemistry
4.7 Charge Transport and Extended Metal-ZnO Schottky Barriers4.8 Conclusion; Acknowledgements; References; 5 Native Point Defects and Doping in ZnO; 5.1 Introduction; 5.2 Theoretical Framework; 5.3 Native Point Defects; 5.3.1 Oxygen Vacancies; 5.3.2 Zinc Interstitials; 5.3.3 Zinc Antisites; 5.3.4 Zinc Vacancies; 5.3.5 Defect Migration; 5.4 Donor Impurities; 5.4.1 Aluminum, Gallium and Indium; 5.4.2 Fluorine; 5.4.3 Hydrogen; 5.5 Acceptor Impurities; 5.5.1 Lithium; 5.5.2 Copper; 5.5.3 Nitrogen; 5.5.4 Phosphorous, Arsenic and Antimony; 5.5.5 Co-Doping; 5.6 Isoelectronic Impurities
Acknowledgements
Record Nr. UNINA-9910130877303321
Chichester, West Sussex, : Wiley, 2011
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Zinc oxide materials for electronic and optoelectronic device applications [[electronic resource] /] / edited by Cole W. Litton, Donald C. Reynolds, Thomas C. Collins
Zinc oxide materials for electronic and optoelectronic device applications [[electronic resource] /] / edited by Cole W. Litton, Donald C. Reynolds, Thomas C. Collins
Pubbl/distr/stampa Chichester, West Sussex, : Wiley, 2011
Descrizione fisica 1 online resource (387 p.)
Disciplina 669/.52
Altri autori (Persone) LittonCole W
ReynoldsDonald C
CollinsThomas C. <1936->
Collana Wiley series in materials for electronic and optoelectronic applications
Soggetto topico Zinc oxide
Electronic apparatus and appliances - Materials
Optoelectronic devices - Materials
ISBN 1-283-40526-1
9786613405265
1-119-99104-8
1-119-99103-X
Classificazione TEC021000
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Zinc Oxide Materials for Electronic and Optoelectronic Device Applications; Contents; Series Preface; Preface; List of Contributors; 1 Fundamental Properties of ZnO; 1.1 Introduction; 1.1.1 Overview; 1.1.2 Organization of Chapter; 1.2 Band Structure; 1.2.1 Valence and Conduction Bands; 1.3 Optical Properties; 1.3.1 Free and Bound Excitons; 1.3.2 Effects of External Magnetic Field on ZnO Excitons; 1.3.3 Strain Field; 1.3.4 Spatial Resonance Dispersion; 1.4 Electrical Properties; 1.4.1 Intrinsic Electronic Transport Properties; 1.4.2 n-type Doping and Donor Levels
1.4.3 p-type Doping and Dopability1.4.4 Schottky Barriers and Ohmic Contacts; 1.5 Band Gap Engineering; 1.5.1 Homovalent Heterostructures; 1.5.2 Heterovalent Heterostructures; 1.6 Spintronics; 1.7 Summary; References; 2 Optical Properties of ZnO; 2.1 Introduction; 2.2 Free Excitons; 2.3 Strain Splitting of the Γ5 and Γ6 Free Excitons in ZnO; 2.4 Photoluminescence from the Two Polar Faces of ZnO; 2.5 Bound-Exciton Complexes in ZnO; 2.6 Similarities in the Photoluminescence Mechanisms of ZnO and GaN
2.7 The Combined Effects of Screening and Band Gap Renormalization on the Energy of Optical Transitions in ZnO and GaN2.8 Closely Spaced Donor-Acceptor Pairs in ZnO; 2.9 Summary; References; 3 Electrical Transport Properties in Zinc Oxide; 3.1 Introduction; 3.2 Hall-Effect Analysis; 3.2.1 Single-Band Conduction; 3.2.2 Two-Band Mixed Conduction; 3.2.3 Conducting Surface Layers; 3.3 Donor States and n-type Doping; 3.3.1 Native Point Defects - Donors; 3.3.2 Substitutional Donors; 3.4 Hydrogen; 3.5 Acceptor States and p-type Doping; 3.5.1 Native Point Defects - Acceptors
3.5.2 Substitutional Acceptors3.6 Photoconductivity; 3.7 Summary; References; 4 ZnO Surface Properties and Schottky Contacts; 4.1 Historical Background of Schottky Contacts on ZnO; 4.1.1 ZnO Surface Effects; 4.1.2 Early Schottky Barrier Studies; 4.2 Recent Schottky Barrier Studies; 4.2.1 Surface Cleaning in Vacuum; 4.2.2 Surface Cleaning Effects on Impurities and Defects; 4.3 The Influence of Surface Preparation on Schottky Barriers; 4.4 The Influence of Defects on Schottky Barriers; 4.5 The Influence of ZnO Polarity on Schottky Barriers; 4.6 The Influence of Chemistry
4.7 Charge Transport and Extended Metal-ZnO Schottky Barriers4.8 Conclusion; Acknowledgements; References; 5 Native Point Defects and Doping in ZnO; 5.1 Introduction; 5.2 Theoretical Framework; 5.3 Native Point Defects; 5.3.1 Oxygen Vacancies; 5.3.2 Zinc Interstitials; 5.3.3 Zinc Antisites; 5.3.4 Zinc Vacancies; 5.3.5 Defect Migration; 5.4 Donor Impurities; 5.4.1 Aluminum, Gallium and Indium; 5.4.2 Fluorine; 5.4.3 Hydrogen; 5.5 Acceptor Impurities; 5.5.1 Lithium; 5.5.2 Copper; 5.5.3 Nitrogen; 5.5.4 Phosphorous, Arsenic and Antimony; 5.5.5 Co-Doping; 5.6 Isoelectronic Impurities
Acknowledgements
Record Nr. UNINA-9910830329803321
Chichester, West Sussex, : Wiley, 2011
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Zinc oxide materials for electronic and optoelectronic device applications [[electronic resource] /] / edited by Cole W. Litton, Donald C. Reynolds, Thomas C. Collins
Zinc oxide materials for electronic and optoelectronic device applications [[electronic resource] /] / edited by Cole W. Litton, Donald C. Reynolds, Thomas C. Collins
Pubbl/distr/stampa Chichester, West Sussex, : Wiley, 2011
Descrizione fisica 1 online resource (387 p.)
Disciplina 669/.52
Altri autori (Persone) LittonCole W
ReynoldsDonald C
CollinsThomas C. <1936->
Collana Wiley series in materials for electronic and optoelectronic applications
Soggetto topico Zinc oxide
Electronic apparatus and appliances - Materials
Optoelectronic devices - Materials
ISBN 1-283-40526-1
9786613405265
1-119-99104-8
1-119-99103-X
Classificazione TEC021000
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Zinc Oxide Materials for Electronic and Optoelectronic Device Applications; Contents; Series Preface; Preface; List of Contributors; 1 Fundamental Properties of ZnO; 1.1 Introduction; 1.1.1 Overview; 1.1.2 Organization of Chapter; 1.2 Band Structure; 1.2.1 Valence and Conduction Bands; 1.3 Optical Properties; 1.3.1 Free and Bound Excitons; 1.3.2 Effects of External Magnetic Field on ZnO Excitons; 1.3.3 Strain Field; 1.3.4 Spatial Resonance Dispersion; 1.4 Electrical Properties; 1.4.1 Intrinsic Electronic Transport Properties; 1.4.2 n-type Doping and Donor Levels
1.4.3 p-type Doping and Dopability1.4.4 Schottky Barriers and Ohmic Contacts; 1.5 Band Gap Engineering; 1.5.1 Homovalent Heterostructures; 1.5.2 Heterovalent Heterostructures; 1.6 Spintronics; 1.7 Summary; References; 2 Optical Properties of ZnO; 2.1 Introduction; 2.2 Free Excitons; 2.3 Strain Splitting of the Γ5 and Γ6 Free Excitons in ZnO; 2.4 Photoluminescence from the Two Polar Faces of ZnO; 2.5 Bound-Exciton Complexes in ZnO; 2.6 Similarities in the Photoluminescence Mechanisms of ZnO and GaN
2.7 The Combined Effects of Screening and Band Gap Renormalization on the Energy of Optical Transitions in ZnO and GaN2.8 Closely Spaced Donor-Acceptor Pairs in ZnO; 2.9 Summary; References; 3 Electrical Transport Properties in Zinc Oxide; 3.1 Introduction; 3.2 Hall-Effect Analysis; 3.2.1 Single-Band Conduction; 3.2.2 Two-Band Mixed Conduction; 3.2.3 Conducting Surface Layers; 3.3 Donor States and n-type Doping; 3.3.1 Native Point Defects - Donors; 3.3.2 Substitutional Donors; 3.4 Hydrogen; 3.5 Acceptor States and p-type Doping; 3.5.1 Native Point Defects - Acceptors
3.5.2 Substitutional Acceptors3.6 Photoconductivity; 3.7 Summary; References; 4 ZnO Surface Properties and Schottky Contacts; 4.1 Historical Background of Schottky Contacts on ZnO; 4.1.1 ZnO Surface Effects; 4.1.2 Early Schottky Barrier Studies; 4.2 Recent Schottky Barrier Studies; 4.2.1 Surface Cleaning in Vacuum; 4.2.2 Surface Cleaning Effects on Impurities and Defects; 4.3 The Influence of Surface Preparation on Schottky Barriers; 4.4 The Influence of Defects on Schottky Barriers; 4.5 The Influence of ZnO Polarity on Schottky Barriers; 4.6 The Influence of Chemistry
4.7 Charge Transport and Extended Metal-ZnO Schottky Barriers4.8 Conclusion; Acknowledgements; References; 5 Native Point Defects and Doping in ZnO; 5.1 Introduction; 5.2 Theoretical Framework; 5.3 Native Point Defects; 5.3.1 Oxygen Vacancies; 5.3.2 Zinc Interstitials; 5.3.3 Zinc Antisites; 5.3.4 Zinc Vacancies; 5.3.5 Defect Migration; 5.4 Donor Impurities; 5.4.1 Aluminum, Gallium and Indium; 5.4.2 Fluorine; 5.4.3 Hydrogen; 5.5 Acceptor Impurities; 5.5.1 Lithium; 5.5.2 Copper; 5.5.3 Nitrogen; 5.5.4 Phosphorous, Arsenic and Antimony; 5.5.5 Co-Doping; 5.6 Isoelectronic Impurities
Acknowledgements
Record Nr. UNINA-9910840844103321
Chichester, West Sussex, : Wiley, 2011
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ZnMgO by APCVD enabling high-performance mid-bandgap CIGS on polyimide modules [[electronic resource] ] : October 2009 - October 2010 / / Lawrence Woods, Ascent Solar Technologies, Inc
ZnMgO by APCVD enabling high-performance mid-bandgap CIGS on polyimide modules [[electronic resource] ] : October 2009 - October 2010 / / Lawrence Woods, Ascent Solar Technologies, Inc
Autore Woods Lawrence M
Pubbl/distr/stampa Golden, CO : , : National Renewable Energy Laboratory, , [2011]
Descrizione fisica 1 online resource (19 pages) : illustrations
Collana NREL/SR
Soggetto topico Photovoltaic cells - Research
Zinc oxide
Chemical vapor deposition
Copper indium selenide
Gallium
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti ZnMgO by APCVD Enabling High-Performance Mid-bandgap CIGS on Polyimide Modules
Record Nr. UNINA-9910703133003321
Woods Lawrence M  
Golden, CO : , : National Renewable Energy Laboratory, , [2011]
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ZnO nano-structures for biosensing applications [[electronic resource] ] : molecular dynamic simulations / / Safaa Al-Hilli and Magnus Willander
ZnO nano-structures for biosensing applications [[electronic resource] ] : molecular dynamic simulations / / Safaa Al-Hilli and Magnus Willander
Autore Al-Hilli Safaa
Pubbl/distr/stampa Hauppauge, NY, : Nova Science Publishers, c2010
Descrizione fisica 1 online resource (66 p.)
Disciplina 681/.2
Altri autori (Persone) WillanderM
Collana Nanotechnology science and technology
Soggetto topico Zinc oxide
Nanotubes
Molecular dynamics
Electrolytes - Conductivity
Biosensors
Soggetto genere / forma Electronic books.
ISBN 1-61761-861-6
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto ""ZNO NANO-STRUCTURES FOR BIOSENSING APPLICATIONS: MOLECULAR DYNAMIC SIMULATIONS ""; ""ZNO NANO-STRUCTURES FOR BIOSENSING APPLICATIONS: MOLECULAR DYNAMIC SIMULATIONS ""; ""CONTENTS ""; ""PREFACE ""; ""INTRODUCTION ""; ""CASES STUDY ""; ""2.1. ZNO HEXAGONAL POLAR SURFACES SLAB-WATER INTERACTION (WETTING AND ELECTROWETTING)""; ""2.2. ZNO NANORODS OR TUBES ARRAY-WATER INTERACTION (WETTING AND ELECTROWETTING)""; ""2.3. WATER PERMEATION THROUGH ZNO NANOTUBE""; ""2.4. IONIC CURRENTS OF MG2+, CA2+, K+, AND NA+ IONS THROUGH ZNO NANOTUBE ""; ""METHOD ""; ""3.1. MOLECULAR DYNAMICS ""
""3.2. BUILDING ZNO STRUCTURES """"3.2.1. ZnO Hexagonal Polar Slab ""; "" 3.2.2. ZnO Nanorods ""; ""3.2.3. ZnO Nanotube ""; ""3.3. ZNO-WATER SYSTEMS""; ""3.3.1. Wetting ""; ""3.3.2. Electrowetting ""; ""3.3.3. Water Permeation ""; ""3.3.4. Ionic Currents ""; ""3.4. WATER DENSITY PROFILES""; ""RESULTS AND DISCUSSION ""; ""4.1. DENSITY PROFILES AND WCA ""; ""4.2. WATER PERMEATION THROUGH ZNO NANOTUBE""; ""4.3. SALT CONCENTRATION DEPENDENCE ON ZNO NANOTUBE IONIC CURRENTS ""; ""CONCLUSION ""; ""REFERENCES ""; ""INDEX ""
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Al-Hilli Safaa  
Hauppauge, NY, : Nova Science Publishers, c2010
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