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Physics and technology of crystalline oxide semiconductor CAAC-IGZO Fundamentals / / edited by Noboru Kimizuka, Shunpei Yamazaki
Physics and technology of crystalline oxide semiconductor CAAC-IGZO Fundamentals / / edited by Noboru Kimizuka, Shunpei Yamazaki
Pubbl/distr/stampa Chichester, West Sussex, England : , : Wiley, , 2017
Descrizione fisica 1 online resource (351 p.)
Disciplina 621.38152
Collana Wiley SID Series in Display Technology
Soggetto topico Semiconductors - Materials
Semiconductors - Characterization
Gallium compounds
Zinc compounds
Oxides
ISBN 1-119-24737-3
1-119-24736-5
1-119-24728-4
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Layered compounds in the In2O3-Ga2O3-ZnO system and related compounds in the ternary system -- Systematic view of crystalline CAAC-IGZO and other crystalline IGZO thin films -- Fundamental properties of IGZO -- CAAC-IGZO field-effect transistor -- Device application using CAAC-IGZO.
Record Nr. UNINA-9910166638303321
Chichester, West Sussex, England : , : Wiley, , 2017
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Physics and technology of crystalline oxide semiconductor CAAC-IGZO : application to LSI / / edited by Shunpei Yamazaki, Masahiro Fujita
Physics and technology of crystalline oxide semiconductor CAAC-IGZO : application to LSI / / edited by Shunpei Yamazaki, Masahiro Fujita
Pubbl/distr/stampa Chichester, England : , : Wiley, , 2017
Descrizione fisica 1 online resource (380 pages) : illustrations (some color)
Disciplina 621.39/5
Collana Wiley-SID Series in Display Technology
Soggetto topico Semiconductors - Materials
Semiconductors - Characterization
Gallium compounds
Zinc compounds
Oxides
Integrated circuits - Large scale integration - Materials
ISBN 1-119-24743-8
1-119-24741-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910148719603321
Chichester, England : , : Wiley, , 2017
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Physics and technology of crystalline oxide semiconductor CAAC-IGZO Fundamentals / / edited by Noboru Kimizuka, Shunpei Yamazaki
Physics and technology of crystalline oxide semiconductor CAAC-IGZO Fundamentals / / edited by Noboru Kimizuka, Shunpei Yamazaki
Pubbl/distr/stampa Chichester, West Sussex, England : , : Wiley, , 2017
Descrizione fisica 1 online resource (351 p.)
Disciplina 621.38152
Collana Wiley SID Series in Display Technology
Soggetto topico Semiconductors - Materials
Semiconductors - Characterization
Gallium compounds
Zinc compounds
Oxides
ISBN 1-119-24737-3
1-119-24736-5
1-119-24728-4
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Layered compounds in the In2O3-Ga2O3-ZnO system and related compounds in the ternary system -- Systematic view of crystalline CAAC-IGZO and other crystalline IGZO thin films -- Fundamental properties of IGZO -- CAAC-IGZO field-effect transistor -- Device application using CAAC-IGZO.
Record Nr. UNINA-9910827469903321
Chichester, West Sussex, England : , : Wiley, , 2017
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Physics and technology of crystalline oxide semiconductor CAAC-IGZO : application to LSI / / edited by Shunpei Yamazaki, Masahiro Fujita
Physics and technology of crystalline oxide semiconductor CAAC-IGZO : application to LSI / / edited by Shunpei Yamazaki, Masahiro Fujita
Pubbl/distr/stampa Chichester, England : , : Wiley, , 2017
Descrizione fisica 1 online resource (380 pages) : illustrations (some color)
Disciplina 621.39/5
Collana Wiley-SID Series in Display Technology
Soggetto topico Semiconductors - Materials
Semiconductors - Characterization
Gallium compounds
Zinc compounds
Oxides
Integrated circuits - Large scale integration - Materials
ISBN 1-119-24743-8
1-119-24741-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910828550203321
Chichester, England : , : Wiley, , 2017
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Physics and technology of crystalline oxide semiconductor CAAC-IGZO Application to displays / / edited by Shunpei Yamazaki, Semiconductor Energy Laboratory Co., Ltd, Japan [and] Tetsuo Tsutsui, Kyushu University (Professor Emeritus), Japan
Physics and technology of crystalline oxide semiconductor CAAC-IGZO Application to displays / / edited by Shunpei Yamazaki, Semiconductor Energy Laboratory Co., Ltd, Japan [and] Tetsuo Tsutsui, Kyushu University (Professor Emeritus), Japan
Pubbl/distr/stampa John Wiley & Sons, Inc
Disciplina 621.3815/20284
Soggetto topico Semiconductors - Materials
Semiconductors - Characterization
Gallium compounds
Zinc compounds
Oxides
Electroluminescent display systems - Materials
ISBN 1-119-24748-9
1-119-24744-6
1-119-24739-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910151741703321
John Wiley & Sons, Inc
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Physics and technology of crystalline oxide semiconductor CAAC-IGZO Application to displays / / edited by Shunpei Yamazaki, Semiconductor Energy Laboratory Co., Ltd, Japan [and] Tetsuo Tsutsui, Kyushu University (Professor Emeritus), Japan
Physics and technology of crystalline oxide semiconductor CAAC-IGZO Application to displays / / edited by Shunpei Yamazaki, Semiconductor Energy Laboratory Co., Ltd, Japan [and] Tetsuo Tsutsui, Kyushu University (Professor Emeritus), Japan
Pubbl/distr/stampa John Wiley & Sons, Inc
Disciplina 621.3815/20284
Soggetto topico Semiconductors - Materials
Semiconductors - Characterization
Gallium compounds
Zinc compounds
Oxides
Electroluminescent display systems - Materials
ISBN 1-119-24748-9
1-119-24744-6
1-119-24739-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910817046703321
John Wiley & Sons, Inc
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Ultramafite-Associated Cu-Fe-Co-Ni-Zn Deposits of the Sykesville District, Maryland Piedemont: Sykesville, Maryland, July 17 1989
Ultramafite-Associated Cu-Fe-Co-Ni-Zn Deposits of the Sykesville District, Maryland Piedemont: Sykesville, Maryland, July 17 1989
Pubbl/distr/stampa [Place of publication not identified], : American Geophysical Union, 2013
Descrizione fisica 1 online resource (239 pages)
Disciplina 546.66
Soggetto topico Zinc compounds
ISBN 1-118-66821-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996217167203316
[Place of publication not identified], : American Geophysical Union, 2013
Materiale a stampa
Lo trovi qui: Univ. di Salerno
Opac: Controlla la disponibilità qui
Ultramafite-Associated Cu-Fe-Co-Ni-Zn Deposits of the Sykesville District, Maryland Piedemont: Sykesville, Maryland, July 17 1989
Ultramafite-Associated Cu-Fe-Co-Ni-Zn Deposits of the Sykesville District, Maryland Piedemont: Sykesville, Maryland, July 17 1989
Pubbl/distr/stampa [Place of publication not identified], : American Geophysical Union, 2013
Descrizione fisica 1 online resource (239 pages)
Disciplina 546.66
Soggetto topico Zinc compounds
ISBN 1-118-66821-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910830952503321
[Place of publication not identified], : American Geophysical Union, 2013
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Ultramafite-Associated Cu-Fe-Co-Ni-Zn Deposits of the Sykesville District, Maryland Piedemont: Sykesville, Maryland, July 17 1989
Ultramafite-Associated Cu-Fe-Co-Ni-Zn Deposits of the Sykesville District, Maryland Piedemont: Sykesville, Maryland, July 17 1989
Pubbl/distr/stampa [Place of publication not identified], : American Geophysical Union, 2013
Descrizione fisica 1 online resource (239 pages)
Disciplina 546.66
Soggetto topico Zinc compounds
ISBN 1-118-66821-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910841381203321
[Place of publication not identified], : American Geophysical Union, 2013
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Zinc oxide [[electronic resource] ] : fundamentals, materials and device technology / / Hadis Morko ̇and Ümit Özgür
Zinc oxide [[electronic resource] ] : fundamentals, materials and device technology / / Hadis Morko ̇and Ümit Özgür
Autore Morko ̇ Hadis
Pubbl/distr/stampa Weinheim, : Wiley-VCH, c2009
Descrizione fisica 1 online resource (491 p.)
Disciplina 546.6612
621.38152
Altri autori (Persone) ÖzgürÜmit <1973->
Soggetto topico Zinc oxide
Zinc compounds
ISBN 1-282-69157-0
9786612691577
3-527-62394-9
3-527-62395-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Zinc Oxide: Fundamentals, Materials and Device Technology; Contents; Preface; 1 General Properties of ZnO; 1.1 Crystal Structure; 1.2 Lattice Parameters; 1.3 Electronic Band Structure; 1.4 Mechanical Properties; 1.5 Vibrational Properties; 1.6 Thermal Properties; 1.6.1 Thermal Expansion Coefficients; 1.6.2 Thermal Conductivity; 1.6.3 Specific Heat; 1.6.4 Pyroelectricity; 1.7 Electrical Properties of Undoped ZnO; 1.7.1 Low-Field Transport; 1.7.2 High-Field Transport; References; 2 ZnO Growth; 2.1 Bulk Growth; 2.2 Substrates; 2.2.1 Sapphire Substrates for ZnO Epitaxy
2.2.2 Other Substrates for ZnO Epitaxy (ScAlMgO4, CaF2, LiTaO3, LiNbO3)2.2.3 ZnO Homoepitaxy; 2.3 Epitaxial Growth Techniques; 2.3.1 RF Magnetron Sputtering; 2.3.2 Molecular Beam Epitaxy; 2.3.2.1 Growth on c-Plane Sapphire; 2.3.2.2 Growth on a-Plane Sapphire; 2.3.2.3 Growth on GaN Templates; 2.3.2.4 Growth on ZnO Substrates; 2.3.3 Pulsed Laser Deposition; 2.3.4 Chemical Vapor Deposition; References; 3 Optical Properties; 3.1 Optical Processes in Semiconductors; 3.1.1 Fundamentals of the Absorption and Emission Processes; 3.1.2 Optical Absorption and Emission in Semiconductors
3.1.3 Band-to-Band Transitions3.1.4 Excitonic Transitions; 3.2 Optical Transitions in ZnO; 3.2.1 Free Excitons and Polaritons; 3.2.2 Bound Excitons; 3.2.3 Two-Electron Satellites in PL; 3.2.4 DAP and Shallow Acceptor-Bound Exciton Transitions and LO-Phonon Replicas in PL; 3.2.5 Temperature-Dependent PL Measurements; 3.3 Defects in ZnO; 3.3.1 Predictions from First Principles; 3.3.2 Defect-Related Optical Transitions in ZnO; 3.3.2.1 Green Luminescence Band; 3.3.2.2 Yellow Luminescence Band; 3.3.2.3 Red Luminescence Band; 3.4 Refractive Index of ZnO and MgZnO; 3.5 Stimulated Emission in ZnO
3.5.1 Polycrystalline ZnO Films and''Random Lasers''3.5.2 Multiple Quantum Wells; 3.6 Recombination Dynamics in ZnO; 3.7 Nonlinear Optical Properties; 3.7.1 Second-Order Nonlinear Optical Properties; 3.7.1.1 Second-Harmonic Generation; 3.7.2 Third-Order Nonlinear Optical Properties; 3.7.2.1 Third Harmonic Generation; 3.7.3 Intensity Dependent Refractive Index; 3.7.4 Two-Photon Absorption; References; 4 Doping of ZnO; 4.1 n-Type Doping; 4.2 p-Type Doping; 4.2.1 Nitrogen Doping; 4.2.2 Codoping Method; 4.2.3 Other Dopants in Group V; 4.2.4 Concluding Remarks on Reliability of p-Type ZnO
References5 ZnO-Based Dilute Magnetic Semiconductors; 5.1 Doping with Transition Metals; 5.2 General Remarks About Dilute Magnetic Semiconductors; 5.3 Classification of Magnetic Materials; 5.4 A Brief Theory of Magnetization; 5.5 Dilute Magnetic Semiconductor Theoretical Aspects; 5.6 Measurements Techniques for Identification of Ferromagnetism; 5.7 Magnetic Interactions in DMS; 5.7.1 Carrier-Single Magnetic Ion Interaction; 5.7.2 Interaction Between Magnetic Ions; 5.7.2.1 Superexchange Mechanism; 5.7.2.2 Blombergen-Rowland Mechanism; 5.7.2.3 Double Exchange Interaction
5.7.2.4 Ruderman-Kittel-Kasuya-Yoshida Mechanism
Record Nr. UNINA-9910145448703321
Morko ̇ Hadis  
Weinheim, : Wiley-VCH, c2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui