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1999 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium : digest of papers
| 1999 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium : digest of papers |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 1999 |
| Disciplina | 621.384/12 |
| Soggetto topico |
Very high speed integrated circuits
Radio frequency integrated circuits Wireless communication systems Electrical & Computer Engineering Electrical Engineering Engineering & Applied Sciences |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996215086703316 |
| [Place of publication not identified], : IEEE, 1999 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : digest of papers : [10-12 January 2007, Long Beach, CA, USA] / / Rhonda Franklin Drayton, editor ; sponsored by IEEE Microwave Theory and Techniques Society
| 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : digest of papers : [10-12 January 2007, Long Beach, CA, USA] / / Rhonda Franklin Drayton, editor ; sponsored by IEEE Microwave Theory and Techniques Society |
| Pubbl/distr/stampa | IEEE |
| Disciplina | 621.384/12 |
| Altri autori (Persone) | DraytonRhonda Franklin |
| Soggetto topico |
Integrated circuits - Design and construction
Radio circuits - Design and construction Very high speed integrated circuits Wireless communication systems - Equipment and supplies |
| ISBN | 1-5090-8237-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti |
Systems, Signals and Image Processing held with 2007 6th EURASIP Conference Focused on Speech and Image Processing, Multimedia Communication and Services
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems |
| Record Nr. | UNISA-996279697503316 |
| IEEE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : digest of papers : [10-12 January 2007, Long Beach, CA, USA] / / Rhonda Franklin Drayton, editor ; sponsored by IEEE Microwave Theory and Techniques Society
| 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : digest of papers : [10-12 January 2007, Long Beach, CA, USA] / / Rhonda Franklin Drayton, editor ; sponsored by IEEE Microwave Theory and Techniques Society |
| Pubbl/distr/stampa | IEEE |
| Disciplina | 621.384/12 |
| Altri autori (Persone) | DraytonRhonda Franklin |
| Soggetto topico |
Integrated circuits - Design and construction
Radio circuits - Design and construction Very high speed integrated circuits Wireless communication systems - Equipment and supplies |
| ISBN | 1-5090-8237-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti |
Systems, Signals and Image Processing held with 2007 6th EURASIP Conference Focused on Speech and Image Processing, Multimedia Communication and Services
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems |
| Record Nr. | UNINA-9910142663503321 |
| IEEE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
2014 IEEE COOL Chips XVII : 14-16 April 2014
| 2014 IEEE COOL Chips XVII : 14-16 April 2014 |
| Pubbl/distr/stampa | New York : , : IEEE, , 2014 |
| Descrizione fisica | 1 online resource (90 pages) |
| Soggetto topico |
Integrated circuits
Very high speed integrated circuits Low voltage integrated circuits |
| ISBN | 1-4799-3810-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996279312903316 |
| New York : , : IEEE, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
2014 IEEE COOL Chips XVII : 14-16 April 2014
| 2014 IEEE COOL Chips XVII : 14-16 April 2014 |
| Pubbl/distr/stampa | New York : , : IEEE, , 2014 |
| Descrizione fisica | 1 online resource (90 pages) |
| Soggetto topico |
Integrated circuits
Very high speed integrated circuits Low voltage integrated circuits |
| ISBN | 1-4799-3810-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910135051703321 |
| New York : , : IEEE, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : 14-17 January 2018, Anaheim, California, USA / / Institute of Electrical and Electronics Engineers
| 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : 14-17 January 2018, Anaheim, California, USA / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2018 |
| Descrizione fisica | 1 online resource (53 pages) |
| Disciplina | 621 |
| Soggetto topico |
Wireless communication systems - Equipment and supplies
Very high speed integrated circuits Radio circuits - Design and construction |
| ISBN | 1-5386-1298-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996279512803316 |
| Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : 14-17 January 2018, Anaheim, California, USA / / Institute of Electrical and Electronics Engineers
| 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : 14-17 January 2018, Anaheim, California, USA / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2018 |
| Descrizione fisica | 1 online resource (53 pages) |
| Disciplina | 621 |
| Soggetto topico |
Wireless communication systems - Equipment and supplies
Very high speed integrated circuits Radio circuits - Design and construction |
| ISBN | 1-5386-1298-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910262258603321 |
| Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced high speed devices [[electronic resource] /] / editors, Michael S. Shur, Paul Maki
| Advanced high speed devices [[electronic resource] /] / editors, Michael S. Shur, Paul Maki |
| Pubbl/distr/stampa | Hackensack, N.J., : World Scientific, 2010 |
| Descrizione fisica | 1 online resource (203 p.) |
| Disciplina | 621.3815 |
| Altri autori (Persone) |
ShurMichael S
MakiPaul |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Very high speed integrated circuits
Semiconductors Transistors Integrated circuits - Very large scale integration |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-76159-5
9786612761591 981-4287-87-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; Preface; Simulation and Experimental Results on GaN Based Ultra-Short Planar Negative Di.erential Conductivity Diodes for THz Power Generation B. Aslan, L. F. Eastman and Q. Diduck; 1. Introduction; 2. Simulation Results; 3. Experimental results and discussion; 4. Conclusion; References; 5-Terminal THz GaN Based Transistor with Field- and Space-Charge Control Electrodes G. Simin, M. S. Shur and R. Gaska; 1. Introduction; 2. GaN Heterostructure Field-Effect Transistors; 3. Proposed novel five-terminal GaN based THz HFET; 4. Acknowledgement; References
Performance Comparison of Scaled III-V and Si Ballistic Nanowire MOSFETs L. Wang, B. Yu, P. M. Asbeck, Y. Taur and M. Rodwell1. Introduction; 2. Numerical Simulation; 3. Analysis and Discussion; 4. Conclusions; 5. Acknowledgement; References; A Room Temperature Ballistic Deflection Transistor for High Performance Applications Q. Diduck, H. Irie and M. Margala; 1. Introduction; 2. Background; 3. Theory of Operation; 4. Experiments and Results; 5. Conclusion; Acknowledgments; References Emission and Intensity Modulation of Terahertz Electromagnetic Radiation Utilizing 2-Dimensional Plasmons in Dual-Grating-Gate HEMT's T. Otsuji, T. Nishimura, Y. Tsuda, Y. M. Meziani, T. Suemitsu and E. Sano1. Introduction; 2. Plasmon-Resonant Terahertz Emitter; 2.1. Device structure and operation principle; 2.2. Characteristic parameters and design scheme; 2.3. Device fabrication; 2.4. Experimental Results and Discussions; 2.4.1. DC-current-driven self oscillation; 2.4.2. CW-pumped optically excited stimulated terahertz emission 2.4.3. Two-photon injection-locked difference-frequency terahertz emission2.4.4. Impulsive laser excited terahertz emission; 3. Terahertz Intensity Modulator Based on Controlling 2D Plasmon Dispersion; 4. Conclusion; Acknowledgements; References; Millimeter Wave to Terahertz in CMOS K. K. O, S. Sankaran, C. Cao, E.-Y. Seok, D. Shim, C. Mao and R. Han; 1. Introduction; 2. Transistors and Diodes in CMOS; 2.1. Speed Performance of NMOS Transistor; 2.2. Schottky Diode and Other devices for THz detection; 3. Signal Sources; 3.1. A. Fundamental Mode VCO; 3.2. Push-Push VCO; 3.3. Phase Locked Loop 4. Detector Circuits5. Conclusions; 6. Acknowledgments; References; The Effects of Increasing AlN Mole Fraction on the Performance of AlGaN Active Regions Containing Nanometer Scale Compositionally Inhomogeneities A. V. Sampath, M. L. Reed, C. Moe, G. A. Garrett, E. D. Readinger, W. L. Sarney, H. Shen, M. Wraback, C. Ch; 1. Introduction; 2. Method; 3. Results; 3.1. Temperature dependent cw-Pl studies; 3.2. Time resolved photoluminescence studies; 3.3. Transmission electron microscopy studies; 3.4. 290 nm Double Heterostructure Ultraviolet Light Emitting Diodes; 4. Discussion; 5. Conclusions 6. Acknowledgements |
| Record Nr. | UNINA-9910455567803321 |
| Hackensack, N.J., : World Scientific, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced high speed devices [[electronic resource] /] / editors, Michael S. Shur, Paul Maki
| Advanced high speed devices [[electronic resource] /] / editors, Michael S. Shur, Paul Maki |
| Pubbl/distr/stampa | Hackensack, N.J., : World Scientific, 2010 |
| Descrizione fisica | 1 online resource (203 p.) |
| Disciplina | 621.3815 |
| Altri autori (Persone) |
ShurMichael S
MakiPaul |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Very high speed integrated circuits
Semiconductors Transistors Integrated circuits - Very large scale integration |
| ISBN |
1-282-76159-5
9786612761591 981-4287-87-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; Preface; Simulation and Experimental Results on GaN Based Ultra-Short Planar Negative Di.erential Conductivity Diodes for THz Power Generation B. Aslan, L. F. Eastman and Q. Diduck; 1. Introduction; 2. Simulation Results; 3. Experimental results and discussion; 4. Conclusion; References; 5-Terminal THz GaN Based Transistor with Field- and Space-Charge Control Electrodes G. Simin, M. S. Shur and R. Gaska; 1. Introduction; 2. GaN Heterostructure Field-Effect Transistors; 3. Proposed novel five-terminal GaN based THz HFET; 4. Acknowledgement; References
Performance Comparison of Scaled III-V and Si Ballistic Nanowire MOSFETs L. Wang, B. Yu, P. M. Asbeck, Y. Taur and M. Rodwell1. Introduction; 2. Numerical Simulation; 3. Analysis and Discussion; 4. Conclusions; 5. Acknowledgement; References; A Room Temperature Ballistic Deflection Transistor for High Performance Applications Q. Diduck, H. Irie and M. Margala; 1. Introduction; 2. Background; 3. Theory of Operation; 4. Experiments and Results; 5. Conclusion; Acknowledgments; References Emission and Intensity Modulation of Terahertz Electromagnetic Radiation Utilizing 2-Dimensional Plasmons in Dual-Grating-Gate HEMT's T. Otsuji, T. Nishimura, Y. Tsuda, Y. M. Meziani, T. Suemitsu and E. Sano1. Introduction; 2. Plasmon-Resonant Terahertz Emitter; 2.1. Device structure and operation principle; 2.2. Characteristic parameters and design scheme; 2.3. Device fabrication; 2.4. Experimental Results and Discussions; 2.4.1. DC-current-driven self oscillation; 2.4.2. CW-pumped optically excited stimulated terahertz emission 2.4.3. Two-photon injection-locked difference-frequency terahertz emission2.4.4. Impulsive laser excited terahertz emission; 3. Terahertz Intensity Modulator Based on Controlling 2D Plasmon Dispersion; 4. Conclusion; Acknowledgements; References; Millimeter Wave to Terahertz in CMOS K. K. O, S. Sankaran, C. Cao, E.-Y. Seok, D. Shim, C. Mao and R. Han; 1. Introduction; 2. Transistors and Diodes in CMOS; 2.1. Speed Performance of NMOS Transistor; 2.2. Schottky Diode and Other devices for THz detection; 3. Signal Sources; 3.1. A. Fundamental Mode VCO; 3.2. Push-Push VCO; 3.3. Phase Locked Loop 4. Detector Circuits5. Conclusions; 6. Acknowledgments; References; The Effects of Increasing AlN Mole Fraction on the Performance of AlGaN Active Regions Containing Nanometer Scale Compositionally Inhomogeneities A. V. Sampath, M. L. Reed, C. Moe, G. A. Garrett, E. D. Readinger, W. L. Sarney, H. Shen, M. Wraback, C. Ch; 1. Introduction; 2. Method; 3. Results; 3.1. Temperature dependent cw-Pl studies; 3.2. Time resolved photoluminescence studies; 3.3. Transmission electron microscopy studies; 3.4. 290 nm Double Heterostructure Ultraviolet Light Emitting Diodes; 4. Discussion; 5. Conclusions 6. Acknowledgements |
| Record Nr. | UNINA-9910780893003321 |
| Hackensack, N.J., : World Scientific, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced high speed devices [[electronic resource] /] / editors, Michael S. Shur, Paul Maki
| Advanced high speed devices [[electronic resource] /] / editors, Michael S. Shur, Paul Maki |
| Pubbl/distr/stampa | Hackensack, N.J., : World Scientific, 2010 |
| Descrizione fisica | 1 online resource (203 p.) |
| Disciplina | 621.3815 |
| Altri autori (Persone) |
ShurMichael S
MakiPaul |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Very high speed integrated circuits
Semiconductors Transistors Integrated circuits - Very large scale integration |
| ISBN |
1-282-76159-5
9786612761591 981-4287-87-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; Preface; Simulation and Experimental Results on GaN Based Ultra-Short Planar Negative Di.erential Conductivity Diodes for THz Power Generation B. Aslan, L. F. Eastman and Q. Diduck; 1. Introduction; 2. Simulation Results; 3. Experimental results and discussion; 4. Conclusion; References; 5-Terminal THz GaN Based Transistor with Field- and Space-Charge Control Electrodes G. Simin, M. S. Shur and R. Gaska; 1. Introduction; 2. GaN Heterostructure Field-Effect Transistors; 3. Proposed novel five-terminal GaN based THz HFET; 4. Acknowledgement; References
Performance Comparison of Scaled III-V and Si Ballistic Nanowire MOSFETs L. Wang, B. Yu, P. M. Asbeck, Y. Taur and M. Rodwell1. Introduction; 2. Numerical Simulation; 3. Analysis and Discussion; 4. Conclusions; 5. Acknowledgement; References; A Room Temperature Ballistic Deflection Transistor for High Performance Applications Q. Diduck, H. Irie and M. Margala; 1. Introduction; 2. Background; 3. Theory of Operation; 4. Experiments and Results; 5. Conclusion; Acknowledgments; References Emission and Intensity Modulation of Terahertz Electromagnetic Radiation Utilizing 2-Dimensional Plasmons in Dual-Grating-Gate HEMT's T. Otsuji, T. Nishimura, Y. Tsuda, Y. M. Meziani, T. Suemitsu and E. Sano1. Introduction; 2. Plasmon-Resonant Terahertz Emitter; 2.1. Device structure and operation principle; 2.2. Characteristic parameters and design scheme; 2.3. Device fabrication; 2.4. Experimental Results and Discussions; 2.4.1. DC-current-driven self oscillation; 2.4.2. CW-pumped optically excited stimulated terahertz emission 2.4.3. Two-photon injection-locked difference-frequency terahertz emission2.4.4. Impulsive laser excited terahertz emission; 3. Terahertz Intensity Modulator Based on Controlling 2D Plasmon Dispersion; 4. Conclusion; Acknowledgements; References; Millimeter Wave to Terahertz in CMOS K. K. O, S. Sankaran, C. Cao, E.-Y. Seok, D. Shim, C. Mao and R. Han; 1. Introduction; 2. Transistors and Diodes in CMOS; 2.1. Speed Performance of NMOS Transistor; 2.2. Schottky Diode and Other devices for THz detection; 3. Signal Sources; 3.1. A. Fundamental Mode VCO; 3.2. Push-Push VCO; 3.3. Phase Locked Loop 4. Detector Circuits5. Conclusions; 6. Acknowledgments; References; The Effects of Increasing AlN Mole Fraction on the Performance of AlGaN Active Regions Containing Nanometer Scale Compositionally Inhomogeneities A. V. Sampath, M. L. Reed, C. Moe, G. A. Garrett, E. D. Readinger, W. L. Sarney, H. Shen, M. Wraback, C. Ch; 1. Introduction; 2. Method; 3. Results; 3.1. Temperature dependent cw-Pl studies; 3.2. Time resolved photoluminescence studies; 3.3. Transmission electron microscopy studies; 3.4. 290 nm Double Heterostructure Ultraviolet Light Emitting Diodes; 4. Discussion; 5. Conclusions 6. Acknowledgements |
| Record Nr. | UNINA-9910826381303321 |
| Hackensack, N.J., : World Scientific, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
