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1.083 micron tunable CW semiconductor laser / / submitted by General Optronics Corp. to NASA Resident Office, JET Propulsion Laboratory
| 1.083 micron tunable CW semiconductor laser / / submitted by General Optronics Corp. to NASA Resident Office, JET Propulsion Laboratory |
| Pubbl/distr/stampa | Edison, NJ : , : General Optronics Corp., , June 28, 1991 |
| Descrizione fisica | 1 online resource (3 unnumbered pages, 39 pages) : illustrations |
| Collana | NASA CR |
| Soggetto topico |
Continuous wave lasers
Semiconductor lasers Solid state lasers Tunable lasers Optical pumping |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 1.083 micron tunable continuous wave semiconductor laser |
| Record Nr. | UNINA-9910703735803321 |
| Edison, NJ : , : General Optronics Corp., , June 28, 1991 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Distributed feedback laser diodes and optical tunable filters [[electronic resource] /] / H. Ghafouri-Shiraz
| Distributed feedback laser diodes and optical tunable filters [[electronic resource] /] / H. Ghafouri-Shiraz |
| Autore | Ghafouri-Shiraz H |
| Pubbl/distr/stampa | West Sussex, England ; ; Hoboken, NJ, : J. Wiley, 2003 |
| Descrizione fisica | 1 online resource (343 p.) |
| Disciplina |
621.36/6
621.38275 |
| Soggetto topico |
Light emitting diodes
Solid-state lasers Tunable lasers Light filters |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-27040-3
9786610270408 0-470-30003-5 0-470-85622-X 0-470-85623-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Distributed Feedback Laser Diodes and Optical Tunable Filters; Contents; Preface; Acknowledgements; Glossary of Abbreviations; Glossary of Symbols; 1. An Introduction to Optical Communication Systems; 1.1 Introduction; 1.2 Historical Progress; 1.3 Optical Fibre Communication Systems; 1.3.1 Intensity Modulation with a Direct Detection Scheme; 1.3.2 Coherent Detection Schemes; 1.4 System Requirements for High-Speed Optical Coherent Communication; 1.4.1 Spectral Purity Requirements; 1.4.2 Spectral Linewidth Requirements; 1.5 Summary; 1.6 References
2. Principles of Distributed Feedback Semiconductor Laser Diodes: Coupled Wave Theory2.1 Introduction; 2.2 Basic Principle of Lasers; 2.2.1 Absorption and Emission of Radiation; 2.2.2 The Einstein Relations and the Concept of Population Inversion; 2.2.3 Dispersive Properties of Atomic Transitions; 2.3 Basic Principles of Semiconductor Lasers; 2.3.1 Population Inversion in Semiconductor Junctions; 2.3.2 Principle of the Fabry-Perot Etalon; 2.3.3 Structural Improvements in Semiconductor Lasers; 2.3.4 Material Gain in Semiconductor Lasers 2.3.5 Total Radiative Recombination Rate in Semiconductors2.4 Coupled Wave Equations in Distributed Feedback Semiconductor Laser Diodes; 2.4.1 A Purely Index-coupled DFB Laser Diode; 2.4.2 A Mixed-coupled DFB Laser Diode; 2.4.3 A Gain-coupled or Loss-coupled DFB Laser Diode; 2.5 Coupling Coefficient; 2.5.1 A Structural Definition of the Coupling Coefficient for DFB Semiconductor Lasers; 2.5.2 The Effect of Corrugation Shape on Coupling Coefficient; 2.5.3 Transverse Field Distribution in an Unperturbed Waveguide; 2.5.4 Results Based upon the Trapezoidal Corrugation; 2.6 Summary; 2.7 References 3. Structural Impacts on the Solutions of Coupled Wave Equations: An Overview3.1 Introduction; 3.2 Solutions of the Coupled Wave Equations; 3.3 Solutions of Complex Transcendental Equations using the Newton-Raphson Approximation; 3.4 Concepts of Mode Discrimination and Gain Margin; 3.5 Threshold Analysis of a Conventional DFB Laser; 3.6 Impact of Corrugation Phase at Laser Facets; 3.7 The Effects of Phase Discontinuity along the DFB Laser Cavity; 3.7.1 Effects of Phase Shift on the Lasing Characteristics of a 1PS DFB Laser Diode 3.7.2 Effects of Phase Shift Position (PSP) on the Lasing Characteristics of a 1PS DFB Laser Diode3.8 Advantages and Disadvantages of QWS DFB Laser Diodes; 3.9 Summary; 3.10 References; 4. Transfer Matrix Modelling in DFB Semiconductor Lasers; 4.1 Introduction; 4.2 Brief Review of Matrix Methods; 4.2.1 Formulation of Transfer Matrices; 4.2.2 Introduction of Phase Shift (or Phase Discontinuity); 4.2.3 Effects of Finite Facet Reflectivities; 4.3 Threshold Condition for the N-Sectioned Laser Cavity; 4.4 Formulation of the Amplified Spontaneous Emission Spectrum using the TMM 4.4.1 Green's Function Method Based on the Transfer Matrix Formulation |
| Record Nr. | UNINA-9910143213303321 |
Ghafouri-Shiraz H
|
||
| West Sussex, England ; ; Hoboken, NJ, : J. Wiley, 2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Distributed feedback laser diodes and optical tunable filters [[electronic resource] /] / H. Ghafouri-Shiraz
| Distributed feedback laser diodes and optical tunable filters [[electronic resource] /] / H. Ghafouri-Shiraz |
| Autore | Ghafouri-Shiraz H |
| Pubbl/distr/stampa | West Sussex, England ; ; Hoboken, NJ, : J. Wiley, 2003 |
| Descrizione fisica | 1 online resource (343 p.) |
| Disciplina |
621.36/6
621.38275 |
| Soggetto topico |
Light emitting diodes
Solid-state lasers Tunable lasers Light filters |
| ISBN |
1-280-27040-3
9786610270408 0-470-30003-5 0-470-85622-X 0-470-85623-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Distributed Feedback Laser Diodes and Optical Tunable Filters; Contents; Preface; Acknowledgements; Glossary of Abbreviations; Glossary of Symbols; 1. An Introduction to Optical Communication Systems; 1.1 Introduction; 1.2 Historical Progress; 1.3 Optical Fibre Communication Systems; 1.3.1 Intensity Modulation with a Direct Detection Scheme; 1.3.2 Coherent Detection Schemes; 1.4 System Requirements for High-Speed Optical Coherent Communication; 1.4.1 Spectral Purity Requirements; 1.4.2 Spectral Linewidth Requirements; 1.5 Summary; 1.6 References
2. Principles of Distributed Feedback Semiconductor Laser Diodes: Coupled Wave Theory2.1 Introduction; 2.2 Basic Principle of Lasers; 2.2.1 Absorption and Emission of Radiation; 2.2.2 The Einstein Relations and the Concept of Population Inversion; 2.2.3 Dispersive Properties of Atomic Transitions; 2.3 Basic Principles of Semiconductor Lasers; 2.3.1 Population Inversion in Semiconductor Junctions; 2.3.2 Principle of the Fabry-Perot Etalon; 2.3.3 Structural Improvements in Semiconductor Lasers; 2.3.4 Material Gain in Semiconductor Lasers 2.3.5 Total Radiative Recombination Rate in Semiconductors2.4 Coupled Wave Equations in Distributed Feedback Semiconductor Laser Diodes; 2.4.1 A Purely Index-coupled DFB Laser Diode; 2.4.2 A Mixed-coupled DFB Laser Diode; 2.4.3 A Gain-coupled or Loss-coupled DFB Laser Diode; 2.5 Coupling Coefficient; 2.5.1 A Structural Definition of the Coupling Coefficient for DFB Semiconductor Lasers; 2.5.2 The Effect of Corrugation Shape on Coupling Coefficient; 2.5.3 Transverse Field Distribution in an Unperturbed Waveguide; 2.5.4 Results Based upon the Trapezoidal Corrugation; 2.6 Summary; 2.7 References 3. Structural Impacts on the Solutions of Coupled Wave Equations: An Overview3.1 Introduction; 3.2 Solutions of the Coupled Wave Equations; 3.3 Solutions of Complex Transcendental Equations using the Newton-Raphson Approximation; 3.4 Concepts of Mode Discrimination and Gain Margin; 3.5 Threshold Analysis of a Conventional DFB Laser; 3.6 Impact of Corrugation Phase at Laser Facets; 3.7 The Effects of Phase Discontinuity along the DFB Laser Cavity; 3.7.1 Effects of Phase Shift on the Lasing Characteristics of a 1PS DFB Laser Diode 3.7.2 Effects of Phase Shift Position (PSP) on the Lasing Characteristics of a 1PS DFB Laser Diode3.8 Advantages and Disadvantages of QWS DFB Laser Diodes; 3.9 Summary; 3.10 References; 4. Transfer Matrix Modelling in DFB Semiconductor Lasers; 4.1 Introduction; 4.2 Brief Review of Matrix Methods; 4.2.1 Formulation of Transfer Matrices; 4.2.2 Introduction of Phase Shift (or Phase Discontinuity); 4.2.3 Effects of Finite Facet Reflectivities; 4.3 Threshold Condition for the N-Sectioned Laser Cavity; 4.4 Formulation of the Amplified Spontaneous Emission Spectrum using the TMM 4.4.1 Green's Function Method Based on the Transfer Matrix Formulation |
| Record Nr. | UNINA-9910830451603321 |
|
Ghafouri-Shiraz H
|
||
| West Sussex, England ; ; Hoboken, NJ, : J. Wiley, 2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Distributed feedback laser diodes and optical tunable filters / / H. Ghafouri-Shiraz
| Distributed feedback laser diodes and optical tunable filters / / H. Ghafouri-Shiraz |
| Autore | Ghafouri-Shiraz H |
| Pubbl/distr/stampa | West Sussex, England ; ; Hoboken, NJ, : J. Wiley, 2003 |
| Descrizione fisica | 1 online resource (343 p.) |
| Disciplina | 621.36/6 |
| Soggetto topico |
Light emitting diodes
Solid-state lasers Tunable lasers Light filters |
| ISBN |
9786610270408
9781280270406 1280270403 9780470300039 0470300035 9780470856222 047085622X 9780470856239 0470856238 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Distributed Feedback Laser Diodes and Optical Tunable Filters; Contents; Preface; Acknowledgements; Glossary of Abbreviations; Glossary of Symbols; 1. An Introduction to Optical Communication Systems; 1.1 Introduction; 1.2 Historical Progress; 1.3 Optical Fibre Communication Systems; 1.3.1 Intensity Modulation with a Direct Detection Scheme; 1.3.2 Coherent Detection Schemes; 1.4 System Requirements for High-Speed Optical Coherent Communication; 1.4.1 Spectral Purity Requirements; 1.4.2 Spectral Linewidth Requirements; 1.5 Summary; 1.6 References
2. Principles of Distributed Feedback Semiconductor Laser Diodes: Coupled Wave Theory2.1 Introduction; 2.2 Basic Principle of Lasers; 2.2.1 Absorption and Emission of Radiation; 2.2.2 The Einstein Relations and the Concept of Population Inversion; 2.2.3 Dispersive Properties of Atomic Transitions; 2.3 Basic Principles of Semiconductor Lasers; 2.3.1 Population Inversion in Semiconductor Junctions; 2.3.2 Principle of the Fabry-Perot Etalon; 2.3.3 Structural Improvements in Semiconductor Lasers; 2.3.4 Material Gain in Semiconductor Lasers 2.3.5 Total Radiative Recombination Rate in Semiconductors2.4 Coupled Wave Equations in Distributed Feedback Semiconductor Laser Diodes; 2.4.1 A Purely Index-coupled DFB Laser Diode; 2.4.2 A Mixed-coupled DFB Laser Diode; 2.4.3 A Gain-coupled or Loss-coupled DFB Laser Diode; 2.5 Coupling Coefficient; 2.5.1 A Structural Definition of the Coupling Coefficient for DFB Semiconductor Lasers; 2.5.2 The Effect of Corrugation Shape on Coupling Coefficient; 2.5.3 Transverse Field Distribution in an Unperturbed Waveguide; 2.5.4 Results Based upon the Trapezoidal Corrugation; 2.6 Summary; 2.7 References 3. Structural Impacts on the Solutions of Coupled Wave Equations: An Overview3.1 Introduction; 3.2 Solutions of the Coupled Wave Equations; 3.3 Solutions of Complex Transcendental Equations using the Newton-Raphson Approximation; 3.4 Concepts of Mode Discrimination and Gain Margin; 3.5 Threshold Analysis of a Conventional DFB Laser; 3.6 Impact of Corrugation Phase at Laser Facets; 3.7 The Effects of Phase Discontinuity along the DFB Laser Cavity; 3.7.1 Effects of Phase Shift on the Lasing Characteristics of a 1PS DFB Laser Diode 3.7.2 Effects of Phase Shift Position (PSP) on the Lasing Characteristics of a 1PS DFB Laser Diode3.8 Advantages and Disadvantages of QWS DFB Laser Diodes; 3.9 Summary; 3.10 References; 4. Transfer Matrix Modelling in DFB Semiconductor Lasers; 4.1 Introduction; 4.2 Brief Review of Matrix Methods; 4.2.1 Formulation of Transfer Matrices; 4.2.2 Introduction of Phase Shift (or Phase Discontinuity); 4.2.3 Effects of Finite Facet Reflectivities; 4.3 Threshold Condition for the N-Sectioned Laser Cavity; 4.4 Formulation of the Amplified Spontaneous Emission Spectrum using the TMM 4.4.1 Green's Function Method Based on the Transfer Matrix Formulation |
| Record Nr. | UNINA-9911019535603321 |
|
Ghafouri-Shiraz H
|
||
| West Sussex, England ; ; Hoboken, NJ, : J. Wiley, 2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Precision spectroscopy, diode lasers, and optical frequency measurement technology : selected publications of the Optical Frequency Measurement Group of the Time and Frequency Division / / Leo Hollberg
| Precision spectroscopy, diode lasers, and optical frequency measurement technology : selected publications of the Optical Frequency Measurement Group of the Time and Frequency Division / / Leo Hollberg |
| Autore | Hollberg Leo (Leo William) |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1998 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) | HollbergLeo (Leo William) |
| Collana | NIST technical note |
| Soggetto topico |
Laser spectroscopy
Optical measurements Semiconductor lasers Tunable lasers |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Precision spectroscopy, diode lasers, and optical frequency measurement technology |
| Record Nr. | UNINA-9910711203003321 |
|
Hollberg Leo (Leo William)
|
||
| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1998 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Raman shifting a tunable ArF excimer laser to wavelengths of 190 to 240 nm with a forced convection Raman cell / / R. Jeffrey Balla and G.C. Herring
| Raman shifting a tunable ArF excimer laser to wavelengths of 190 to 240 nm with a forced convection Raman cell / / R. Jeffrey Balla and G.C. Herring |
| Autore | Balla R. Jeffrey |
| Pubbl/distr/stampa | Hampton, Virginia : , : National Aeronautics and Space Administration, Langley Research Center, , April 2000 |
| Descrizione fisica | 1 online resource (49 pages) : illustrations |
| Collana | NASA/TM |
| Soggetto topico |
Tunable lasers
Argon Fluorides Forced convection Raman spectra Frequency ranges |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910706230703321 |
|
Balla R. Jeffrey
|
||
| Hampton, Virginia : , : National Aeronautics and Space Administration, Langley Research Center, , April 2000 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Toward extended-cavity grating-tuned mid-infrared diode laser operation / / Manfred. Murtz
| Toward extended-cavity grating-tuned mid-infrared diode laser operation / / Manfred. Murtz |
| Autore | Mürtz Manfred |
| Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1997 |
| Descrizione fisica | 1 online resource |
| Altri autori (Persone) | MürtzManfred |
| Collana | NIST technical note |
| Soggetto topico |
Diodes
Tunable lasers |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910711207603321 |
|
Mürtz Manfred
|
||
| Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1997 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
