Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
| 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 1997 |
| Disciplina | 621.381/045 |
| Soggetto topico |
Semiconductors
Optoelectronic devices Microwave integrated circuits Transistors Electrical & Computer Engineering Electrical Engineering Engineering & Applied Sciences |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996212479203316 |
| [Place of publication not identified], : IEEE, 1997 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
| 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 1997 |
| Disciplina | 621.381/045 |
| Soggetto topico |
Semiconductors
Optoelectronic devices Microwave integrated circuits Transistors Electrical & Computer Engineering Electrical Engineering Engineering & Applied Sciences |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872425503321 |
| [Place of publication not identified], : IEEE, 1997 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
25 kW resonant dc/dc power converter : final report / / R.R. Robson
| 25 kW resonant dc/dc power converter : final report / / R.R. Robson |
| Autore | Robson R. R. |
| Pubbl/distr/stampa | Cleveland, OH : , : NASA Lewis Research Center, , January 1984 |
| Descrizione fisica | 1 online resource (152 pages) : illustrations |
| Collana | NASA/CR |
| Soggetto topico |
Resonant frequencies
Transistors Electric bridges Circuit breakers Voltage converters (DC to DC) |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 25 kW resonant dc/dc power converter |
| Record Nr. | UNINA-9910709828003321 |
Robson R. R.
|
||
| Cleveland, OH : , : NASA Lewis Research Center, , January 1984 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
75th anniversary of the transistor / / edited by Arokia Nathan, Samar Saha, Ravi M. Todi
| 75th anniversary of the transistor / / edited by Arokia Nathan, Samar Saha, Ravi M. Todi |
| Edizione | [First edition.] |
| Pubbl/distr/stampa | Hoboken, NJ : , : John Wiley & Sons, Inc., , [2023] |
| Descrizione fisica | 1 online resource (479 pages) |
| Disciplina | 621.38152809 |
| Soggetto topico |
Transistors
Integrated circuits |
| Soggetto non controllato |
Integrated Circuits
Semiconductors Technology & Engineering |
| ISBN |
1-394-20247-4
1-394-20245-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910735564703321 |
| Hoboken, NJ : , : John Wiley & Sons, Inc., , [2023] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced high speed devices [[electronic resource] /] / editors, Michael S. Shur, Paul Maki
| Advanced high speed devices [[electronic resource] /] / editors, Michael S. Shur, Paul Maki |
| Pubbl/distr/stampa | Hackensack, N.J., : World Scientific, 2010 |
| Descrizione fisica | 1 online resource (203 p.) |
| Disciplina | 621.3815 |
| Altri autori (Persone) |
ShurMichael S
MakiPaul |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Very high speed integrated circuits
Semiconductors Transistors Integrated circuits - Very large scale integration |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-76159-5
9786612761591 981-4287-87-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; Preface; Simulation and Experimental Results on GaN Based Ultra-Short Planar Negative Di.erential Conductivity Diodes for THz Power Generation B. Aslan, L. F. Eastman and Q. Diduck; 1. Introduction; 2. Simulation Results; 3. Experimental results and discussion; 4. Conclusion; References; 5-Terminal THz GaN Based Transistor with Field- and Space-Charge Control Electrodes G. Simin, M. S. Shur and R. Gaska; 1. Introduction; 2. GaN Heterostructure Field-Effect Transistors; 3. Proposed novel five-terminal GaN based THz HFET; 4. Acknowledgement; References
Performance Comparison of Scaled III-V and Si Ballistic Nanowire MOSFETs L. Wang, B. Yu, P. M. Asbeck, Y. Taur and M. Rodwell1. Introduction; 2. Numerical Simulation; 3. Analysis and Discussion; 4. Conclusions; 5. Acknowledgement; References; A Room Temperature Ballistic Deflection Transistor for High Performance Applications Q. Diduck, H. Irie and M. Margala; 1. Introduction; 2. Background; 3. Theory of Operation; 4. Experiments and Results; 5. Conclusion; Acknowledgments; References Emission and Intensity Modulation of Terahertz Electromagnetic Radiation Utilizing 2-Dimensional Plasmons in Dual-Grating-Gate HEMT's T. Otsuji, T. Nishimura, Y. Tsuda, Y. M. Meziani, T. Suemitsu and E. Sano1. Introduction; 2. Plasmon-Resonant Terahertz Emitter; 2.1. Device structure and operation principle; 2.2. Characteristic parameters and design scheme; 2.3. Device fabrication; 2.4. Experimental Results and Discussions; 2.4.1. DC-current-driven self oscillation; 2.4.2. CW-pumped optically excited stimulated terahertz emission 2.4.3. Two-photon injection-locked difference-frequency terahertz emission2.4.4. Impulsive laser excited terahertz emission; 3. Terahertz Intensity Modulator Based on Controlling 2D Plasmon Dispersion; 4. Conclusion; Acknowledgements; References; Millimeter Wave to Terahertz in CMOS K. K. O, S. Sankaran, C. Cao, E.-Y. Seok, D. Shim, C. Mao and R. Han; 1. Introduction; 2. Transistors and Diodes in CMOS; 2.1. Speed Performance of NMOS Transistor; 2.2. Schottky Diode and Other devices for THz detection; 3. Signal Sources; 3.1. A. Fundamental Mode VCO; 3.2. Push-Push VCO; 3.3. Phase Locked Loop 4. Detector Circuits5. Conclusions; 6. Acknowledgments; References; The Effects of Increasing AlN Mole Fraction on the Performance of AlGaN Active Regions Containing Nanometer Scale Compositionally Inhomogeneities A. V. Sampath, M. L. Reed, C. Moe, G. A. Garrett, E. D. Readinger, W. L. Sarney, H. Shen, M. Wraback, C. Ch; 1. Introduction; 2. Method; 3. Results; 3.1. Temperature dependent cw-Pl studies; 3.2. Time resolved photoluminescence studies; 3.3. Transmission electron microscopy studies; 3.4. 290 nm Double Heterostructure Ultraviolet Light Emitting Diodes; 4. Discussion; 5. Conclusions 6. Acknowledgements |
| Record Nr. | UNINA-9910455567803321 |
| Hackensack, N.J., : World Scientific, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced high speed devices [[electronic resource] /] / editors, Michael S. Shur, Paul Maki
| Advanced high speed devices [[electronic resource] /] / editors, Michael S. Shur, Paul Maki |
| Pubbl/distr/stampa | Hackensack, N.J., : World Scientific, 2010 |
| Descrizione fisica | 1 online resource (203 p.) |
| Disciplina | 621.3815 |
| Altri autori (Persone) |
ShurMichael S
MakiPaul |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Very high speed integrated circuits
Semiconductors Transistors Integrated circuits - Very large scale integration |
| ISBN |
1-282-76159-5
9786612761591 981-4287-87-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; Preface; Simulation and Experimental Results on GaN Based Ultra-Short Planar Negative Di.erential Conductivity Diodes for THz Power Generation B. Aslan, L. F. Eastman and Q. Diduck; 1. Introduction; 2. Simulation Results; 3. Experimental results and discussion; 4. Conclusion; References; 5-Terminal THz GaN Based Transistor with Field- and Space-Charge Control Electrodes G. Simin, M. S. Shur and R. Gaska; 1. Introduction; 2. GaN Heterostructure Field-Effect Transistors; 3. Proposed novel five-terminal GaN based THz HFET; 4. Acknowledgement; References
Performance Comparison of Scaled III-V and Si Ballistic Nanowire MOSFETs L. Wang, B. Yu, P. M. Asbeck, Y. Taur and M. Rodwell1. Introduction; 2. Numerical Simulation; 3. Analysis and Discussion; 4. Conclusions; 5. Acknowledgement; References; A Room Temperature Ballistic Deflection Transistor for High Performance Applications Q. Diduck, H. Irie and M. Margala; 1. Introduction; 2. Background; 3. Theory of Operation; 4. Experiments and Results; 5. Conclusion; Acknowledgments; References Emission and Intensity Modulation of Terahertz Electromagnetic Radiation Utilizing 2-Dimensional Plasmons in Dual-Grating-Gate HEMT's T. Otsuji, T. Nishimura, Y. Tsuda, Y. M. Meziani, T. Suemitsu and E. Sano1. Introduction; 2. Plasmon-Resonant Terahertz Emitter; 2.1. Device structure and operation principle; 2.2. Characteristic parameters and design scheme; 2.3. Device fabrication; 2.4. Experimental Results and Discussions; 2.4.1. DC-current-driven self oscillation; 2.4.2. CW-pumped optically excited stimulated terahertz emission 2.4.3. Two-photon injection-locked difference-frequency terahertz emission2.4.4. Impulsive laser excited terahertz emission; 3. Terahertz Intensity Modulator Based on Controlling 2D Plasmon Dispersion; 4. Conclusion; Acknowledgements; References; Millimeter Wave to Terahertz in CMOS K. K. O, S. Sankaran, C. Cao, E.-Y. Seok, D. Shim, C. Mao and R. Han; 1. Introduction; 2. Transistors and Diodes in CMOS; 2.1. Speed Performance of NMOS Transistor; 2.2. Schottky Diode and Other devices for THz detection; 3. Signal Sources; 3.1. A. Fundamental Mode VCO; 3.2. Push-Push VCO; 3.3. Phase Locked Loop 4. Detector Circuits5. Conclusions; 6. Acknowledgments; References; The Effects of Increasing AlN Mole Fraction on the Performance of AlGaN Active Regions Containing Nanometer Scale Compositionally Inhomogeneities A. V. Sampath, M. L. Reed, C. Moe, G. A. Garrett, E. D. Readinger, W. L. Sarney, H. Shen, M. Wraback, C. Ch; 1. Introduction; 2. Method; 3. Results; 3.1. Temperature dependent cw-Pl studies; 3.2. Time resolved photoluminescence studies; 3.3. Transmission electron microscopy studies; 3.4. 290 nm Double Heterostructure Ultraviolet Light Emitting Diodes; 4. Discussion; 5. Conclusions 6. Acknowledgements |
| Record Nr. | UNINA-9910780893003321 |
| Hackensack, N.J., : World Scientific, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced high speed devices / / editors, Michael S. Shur, Paul Maki
| Advanced high speed devices / / editors, Michael S. Shur, Paul Maki |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Hackensack, N.J., : World Scientific, 2010 |
| Descrizione fisica | 1 online resource (203 p.) |
| Disciplina | 621.3815 |
| Altri autori (Persone) |
ShurMichael S
MakiPaul |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Very high speed integrated circuits
Semiconductors Transistors Integrated circuits - Very large scale integration |
| ISBN |
1-282-76159-5
9786612761591 981-4287-87-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; Preface; Simulation and Experimental Results on GaN Based Ultra-Short Planar Negative Di.erential Conductivity Diodes for THz Power Generation B. Aslan, L. F. Eastman and Q. Diduck; 1. Introduction; 2. Simulation Results; 3. Experimental results and discussion; 4. Conclusion; References; 5-Terminal THz GaN Based Transistor with Field- and Space-Charge Control Electrodes G. Simin, M. S. Shur and R. Gaska; 1. Introduction; 2. GaN Heterostructure Field-Effect Transistors; 3. Proposed novel five-terminal GaN based THz HFET; 4. Acknowledgement; References
Performance Comparison of Scaled III-V and Si Ballistic Nanowire MOSFETs L. Wang, B. Yu, P. M. Asbeck, Y. Taur and M. Rodwell1. Introduction; 2. Numerical Simulation; 3. Analysis and Discussion; 4. Conclusions; 5. Acknowledgement; References; A Room Temperature Ballistic Deflection Transistor for High Performance Applications Q. Diduck, H. Irie and M. Margala; 1. Introduction; 2. Background; 3. Theory of Operation; 4. Experiments and Results; 5. Conclusion; Acknowledgments; References Emission and Intensity Modulation of Terahertz Electromagnetic Radiation Utilizing 2-Dimensional Plasmons in Dual-Grating-Gate HEMT's T. Otsuji, T. Nishimura, Y. Tsuda, Y. M. Meziani, T. Suemitsu and E. Sano1. Introduction; 2. Plasmon-Resonant Terahertz Emitter; 2.1. Device structure and operation principle; 2.2. Characteristic parameters and design scheme; 2.3. Device fabrication; 2.4. Experimental Results and Discussions; 2.4.1. DC-current-driven self oscillation; 2.4.2. CW-pumped optically excited stimulated terahertz emission 2.4.3. Two-photon injection-locked difference-frequency terahertz emission2.4.4. Impulsive laser excited terahertz emission; 3. Terahertz Intensity Modulator Based on Controlling 2D Plasmon Dispersion; 4. Conclusion; Acknowledgements; References; Millimeter Wave to Terahertz in CMOS K. K. O, S. Sankaran, C. Cao, E.-Y. Seok, D. Shim, C. Mao and R. Han; 1. Introduction; 2. Transistors and Diodes in CMOS; 2.1. Speed Performance of NMOS Transistor; 2.2. Schottky Diode and Other devices for THz detection; 3. Signal Sources; 3.1. A. Fundamental Mode VCO; 3.2. Push-Push VCO; 3.3. Phase Locked Loop 4. Detector Circuits5. Conclusions; 6. Acknowledgments; References; The Effects of Increasing AlN Mole Fraction on the Performance of AlGaN Active Regions Containing Nanometer Scale Compositionally Inhomogeneities A. V. Sampath, M. L. Reed, C. Moe, G. A. Garrett, E. D. Readinger, W. L. Sarney, H. Shen, M. Wraback, C. Ch; 1. Introduction; 2. Method; 3. Results; 3.1. Temperature dependent cw-Pl studies; 3.2. Time resolved photoluminescence studies; 3.3. Transmission electron microscopy studies; 3.4. 290 nm Double Heterostructure Ultraviolet Light Emitting Diodes; 4. Discussion; 5. Conclusions 6. Acknowledgements |
| Record Nr. | UNINA-9910826381303321 |
| Hackensack, N.J., : World Scientific, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
ANSI/IEEE Std 449-1984 : IEEE Standard for Ferroresonant Voltage Regulators / / Institute of Electrical and Electronics Engineers
| ANSI/IEEE Std 449-1984 : IEEE Standard for Ferroresonant Voltage Regulators / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | New York, N.Y. : , : IEEE, , 1982 |
| Descrizione fisica | 1 online resource (26 pages) : illustrations |
| Disciplina | 621.3815 |
| Soggetto topico |
Voltage regulators
Transistors |
| ISBN | 1-5044-0346-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | ANSI/IEEE Std 449-1984 |
| Record Nr. | UNINA-9910136434303321 |
| New York, N.Y. : , : IEEE, , 1982 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
ANSI/IEEE Std 449-1984 : IEEE Standard for Ferroresonant Voltage Regulators / / Institute of Electrical and Electronics Engineers
| ANSI/IEEE Std 449-1984 : IEEE Standard for Ferroresonant Voltage Regulators / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | New York, N.Y. : , : IEEE, , 1982 |
| Descrizione fisica | 1 online resource (26 pages) : illustrations |
| Disciplina | 621.3815 |
| Soggetto topico |
Voltage regulators
Transistors |
| ISBN | 1-5044-0346-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | ANSI/IEEE Std 449-1984 |
| Record Nr. | UNISA-996279867603316 |
| New York, N.Y. : , : IEEE, , 1982 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Characteristics and limitations of transistors / Richard D. Thornton...[et al.]
| Characteristics and limitations of transistors / Richard D. Thornton...[et al.] |
| Autore | Thornton, Richard D. |
| Pubbl/distr/stampa | New York : John Wiley & Sons, 1966 |
| Descrizione fisica | xii, 180 p. : ill. ; 22 cm. |
| Collana | Semiconductor electronics education committee books ; 4 |
| Soggetto topico | Transistors |
| Classificazione |
621.3.1
621.3.2 621.381528 TK7872.T73 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISALENTO-991000848319707536 |
|
Thornton, Richard D.
|
||
| New York : John Wiley & Sons, 1966 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Salento | ||
| ||
