top

  Info

  • Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.

  Info

  • Utilizzare questo link per rimuovere la selezione effettuata.

Biblioteca

MARC Lista (tabellare)
1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Pubbl/distr/stampa [Place of publication not identified], : IEEE, 1997
Descrizione fisica 1 online resource (580 pages)
Disciplina 621.38152
Soggetto topico Semiconductors
Transistors
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910872401603321
[Place of publication not identified], : IEEE, 1997
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
Pubbl/distr/stampa [Place of publication not identified], : IEEE, 1997
Disciplina 621.381/045
Soggetto topico Semiconductors
Optoelectronic devices
Microwave integrated circuits
Transistors
Electrical & Computer Engineering
Electrical Engineering
Engineering & Applied Sciences
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996212479203316
[Place of publication not identified], : IEEE, 1997
Materiale a stampa
Lo trovi qui: Univ. di Salerno
Opac: Controlla la disponibilità qui
1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
Pubbl/distr/stampa [Place of publication not identified], : IEEE, 1997
Disciplina 621.381/045
Soggetto topico Semiconductors
Optoelectronic devices
Microwave integrated circuits
Transistors
Electrical & Computer Engineering
Electrical Engineering
Engineering & Applied Sciences
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910872425503321
[Place of publication not identified], : IEEE, 1997
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
25 kW resonant dc/dc power converter : final report / / R.R. Robson
25 kW resonant dc/dc power converter : final report / / R.R. Robson
Autore Robson R. R.
Pubbl/distr/stampa Cleveland, OH : , : NASA Lewis Research Center, , January 1984
Descrizione fisica 1 online resource (152 pages) : illustrations
Collana NASA/CR
Soggetto topico Resonant frequencies
Transistors
Electric bridges
Circuit breakers
Voltage converters (DC to DC)
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti 25 kW resonant dc/dc power converter
Record Nr. UNINA-9910709828003321
Robson R. R.  
Cleveland, OH : , : NASA Lewis Research Center, , January 1984
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
75th anniversary of the transistor / / edited by Arokia Nathan, Samar Saha, Ravi M. Todi
75th anniversary of the transistor / / edited by Arokia Nathan, Samar Saha, Ravi M. Todi
Edizione [First edition.]
Pubbl/distr/stampa Hoboken, NJ : , : John Wiley & Sons, Inc., , [2023]
Descrizione fisica 1 online resource (479 pages)
Disciplina 621.38152809
Soggetto topico Transistors
Integrated circuits
Soggetto non controllato Integrated Circuits
Semiconductors
Technology & Engineering
ISBN 1-394-20247-4
1-394-20245-8
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910735564703321
Hoboken, NJ : , : John Wiley & Sons, Inc., , [2023]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Advanced high speed devices [[electronic resource] /] / editors, Michael S. Shur, Paul Maki
Advanced high speed devices [[electronic resource] /] / editors, Michael S. Shur, Paul Maki
Pubbl/distr/stampa Hackensack, N.J., : World Scientific, 2010
Descrizione fisica 1 online resource (203 p.)
Disciplina 621.3815
Altri autori (Persone) ShurMichael S
MakiPaul
Collana Selected topics in electronics and systems
Soggetto topico Very high speed integrated circuits
Semiconductors
Transistors
Integrated circuits - Very large scale integration
Soggetto genere / forma Electronic books.
ISBN 1-282-76159-5
9786612761591
981-4287-87-3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto CONTENTS; Preface; Simulation and Experimental Results on GaN Based Ultra-Short Planar Negative Di.erential Conductivity Diodes for THz Power Generation B. Aslan, L. F. Eastman and Q. Diduck; 1. Introduction; 2. Simulation Results; 3. Experimental results and discussion; 4. Conclusion; References; 5-Terminal THz GaN Based Transistor with Field- and Space-Charge Control Electrodes G. Simin, M. S. Shur and R. Gaska; 1. Introduction; 2. GaN Heterostructure Field-Effect Transistors; 3. Proposed novel five-terminal GaN based THz HFET; 4. Acknowledgement; References
Performance Comparison of Scaled III-V and Si Ballistic Nanowire MOSFETs L. Wang, B. Yu, P. M. Asbeck, Y. Taur and M. Rodwell1. Introduction; 2. Numerical Simulation; 3. Analysis and Discussion; 4. Conclusions; 5. Acknowledgement; References; A Room Temperature Ballistic Deflection Transistor for High Performance Applications Q. Diduck, H. Irie and M. Margala; 1. Introduction; 2. Background; 3. Theory of Operation; 4. Experiments and Results; 5. Conclusion; Acknowledgments; References
Emission and Intensity Modulation of Terahertz Electromagnetic Radiation Utilizing 2-Dimensional Plasmons in Dual-Grating-Gate HEMT's T. Otsuji, T. Nishimura, Y. Tsuda, Y. M. Meziani, T. Suemitsu and E. Sano1. Introduction; 2. Plasmon-Resonant Terahertz Emitter; 2.1. Device structure and operation principle; 2.2. Characteristic parameters and design scheme; 2.3. Device fabrication; 2.4. Experimental Results and Discussions; 2.4.1. DC-current-driven self oscillation; 2.4.2. CW-pumped optically excited stimulated terahertz emission
2.4.3. Two-photon injection-locked difference-frequency terahertz emission2.4.4. Impulsive laser excited terahertz emission; 3. Terahertz Intensity Modulator Based on Controlling 2D Plasmon Dispersion; 4. Conclusion; Acknowledgements; References; Millimeter Wave to Terahertz in CMOS K. K. O, S. Sankaran, C. Cao, E.-Y. Seok, D. Shim, C. Mao and R. Han; 1. Introduction; 2. Transistors and Diodes in CMOS; 2.1. Speed Performance of NMOS Transistor; 2.2. Schottky Diode and Other devices for THz detection; 3. Signal Sources; 3.1. A. Fundamental Mode VCO; 3.2. Push-Push VCO; 3.3. Phase Locked Loop
4. Detector Circuits5. Conclusions; 6. Acknowledgments; References; The Effects of Increasing AlN Mole Fraction on the Performance of AlGaN Active Regions Containing Nanometer Scale Compositionally Inhomogeneities A. V. Sampath, M. L. Reed, C. Moe, G. A. Garrett, E. D. Readinger, W. L. Sarney, H. Shen, M. Wraback, C. Ch; 1. Introduction; 2. Method; 3. Results; 3.1. Temperature dependent cw-Pl studies; 3.2. Time resolved photoluminescence studies; 3.3. Transmission electron microscopy studies; 3.4. 290 nm Double Heterostructure Ultraviolet Light Emitting Diodes; 4. Discussion; 5. Conclusions
6. Acknowledgements
Record Nr. UNINA-9910455567803321
Hackensack, N.J., : World Scientific, 2010
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Advanced high speed devices [[electronic resource] /] / editors, Michael S. Shur, Paul Maki
Advanced high speed devices [[electronic resource] /] / editors, Michael S. Shur, Paul Maki
Pubbl/distr/stampa Hackensack, N.J., : World Scientific, 2010
Descrizione fisica 1 online resource (203 p.)
Disciplina 621.3815
Altri autori (Persone) ShurMichael S
MakiPaul
Collana Selected topics in electronics and systems
Soggetto topico Very high speed integrated circuits
Semiconductors
Transistors
Integrated circuits - Very large scale integration
ISBN 1-282-76159-5
9786612761591
981-4287-87-3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto CONTENTS; Preface; Simulation and Experimental Results on GaN Based Ultra-Short Planar Negative Di.erential Conductivity Diodes for THz Power Generation B. Aslan, L. F. Eastman and Q. Diduck; 1. Introduction; 2. Simulation Results; 3. Experimental results and discussion; 4. Conclusion; References; 5-Terminal THz GaN Based Transistor with Field- and Space-Charge Control Electrodes G. Simin, M. S. Shur and R. Gaska; 1. Introduction; 2. GaN Heterostructure Field-Effect Transistors; 3. Proposed novel five-terminal GaN based THz HFET; 4. Acknowledgement; References
Performance Comparison of Scaled III-V and Si Ballistic Nanowire MOSFETs L. Wang, B. Yu, P. M. Asbeck, Y. Taur and M. Rodwell1. Introduction; 2. Numerical Simulation; 3. Analysis and Discussion; 4. Conclusions; 5. Acknowledgement; References; A Room Temperature Ballistic Deflection Transistor for High Performance Applications Q. Diduck, H. Irie and M. Margala; 1. Introduction; 2. Background; 3. Theory of Operation; 4. Experiments and Results; 5. Conclusion; Acknowledgments; References
Emission and Intensity Modulation of Terahertz Electromagnetic Radiation Utilizing 2-Dimensional Plasmons in Dual-Grating-Gate HEMT's T. Otsuji, T. Nishimura, Y. Tsuda, Y. M. Meziani, T. Suemitsu and E. Sano1. Introduction; 2. Plasmon-Resonant Terahertz Emitter; 2.1. Device structure and operation principle; 2.2. Characteristic parameters and design scheme; 2.3. Device fabrication; 2.4. Experimental Results and Discussions; 2.4.1. DC-current-driven self oscillation; 2.4.2. CW-pumped optically excited stimulated terahertz emission
2.4.3. Two-photon injection-locked difference-frequency terahertz emission2.4.4. Impulsive laser excited terahertz emission; 3. Terahertz Intensity Modulator Based on Controlling 2D Plasmon Dispersion; 4. Conclusion; Acknowledgements; References; Millimeter Wave to Terahertz in CMOS K. K. O, S. Sankaran, C. Cao, E.-Y. Seok, D. Shim, C. Mao and R. Han; 1. Introduction; 2. Transistors and Diodes in CMOS; 2.1. Speed Performance of NMOS Transistor; 2.2. Schottky Diode and Other devices for THz detection; 3. Signal Sources; 3.1. A. Fundamental Mode VCO; 3.2. Push-Push VCO; 3.3. Phase Locked Loop
4. Detector Circuits5. Conclusions; 6. Acknowledgments; References; The Effects of Increasing AlN Mole Fraction on the Performance of AlGaN Active Regions Containing Nanometer Scale Compositionally Inhomogeneities A. V. Sampath, M. L. Reed, C. Moe, G. A. Garrett, E. D. Readinger, W. L. Sarney, H. Shen, M. Wraback, C. Ch; 1. Introduction; 2. Method; 3. Results; 3.1. Temperature dependent cw-Pl studies; 3.2. Time resolved photoluminescence studies; 3.3. Transmission electron microscopy studies; 3.4. 290 nm Double Heterostructure Ultraviolet Light Emitting Diodes; 4. Discussion; 5. Conclusions
6. Acknowledgements
Record Nr. UNINA-9910780893003321
Hackensack, N.J., : World Scientific, 2010
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Advanced high speed devices / / editors, Michael S. Shur, Paul Maki
Advanced high speed devices / / editors, Michael S. Shur, Paul Maki
Edizione [1st ed.]
Pubbl/distr/stampa Hackensack, N.J., : World Scientific, 2010
Descrizione fisica 1 online resource (203 p.)
Disciplina 621.3815
Altri autori (Persone) ShurMichael
MakiPaul A. <1956->
Collana Selected topics in electronics and systems
Soggetto topico Very high speed integrated circuits
Semiconductors
Transistors
Integrated circuits - Very large scale integration
ISBN 9786612761591
9781282761599
1282761595
9789814287876
9814287873
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto CONTENTS; Preface; Simulation and Experimental Results on GaN Based Ultra-Short Planar Negative Di.erential Conductivity Diodes for THz Power Generation B. Aslan, L. F. Eastman and Q. Diduck; 1. Introduction; 2. Simulation Results; 3. Experimental results and discussion; 4. Conclusion; References; 5-Terminal THz GaN Based Transistor with Field- and Space-Charge Control Electrodes G. Simin, M. S. Shur and R. Gaska; 1. Introduction; 2. GaN Heterostructure Field-Effect Transistors; 3. Proposed novel five-terminal GaN based THz HFET; 4. Acknowledgement; References
Performance Comparison of Scaled III-V and Si Ballistic Nanowire MOSFETs L. Wang, B. Yu, P. M. Asbeck, Y. Taur and M. Rodwell1. Introduction; 2. Numerical Simulation; 3. Analysis and Discussion; 4. Conclusions; 5. Acknowledgement; References; A Room Temperature Ballistic Deflection Transistor for High Performance Applications Q. Diduck, H. Irie and M. Margala; 1. Introduction; 2. Background; 3. Theory of Operation; 4. Experiments and Results; 5. Conclusion; Acknowledgments; References
Emission and Intensity Modulation of Terahertz Electromagnetic Radiation Utilizing 2-Dimensional Plasmons in Dual-Grating-Gate HEMT's T. Otsuji, T. Nishimura, Y. Tsuda, Y. M. Meziani, T. Suemitsu and E. Sano1. Introduction; 2. Plasmon-Resonant Terahertz Emitter; 2.1. Device structure and operation principle; 2.2. Characteristic parameters and design scheme; 2.3. Device fabrication; 2.4. Experimental Results and Discussions; 2.4.1. DC-current-driven self oscillation; 2.4.2. CW-pumped optically excited stimulated terahertz emission
2.4.3. Two-photon injection-locked difference-frequency terahertz emission2.4.4. Impulsive laser excited terahertz emission; 3. Terahertz Intensity Modulator Based on Controlling 2D Plasmon Dispersion; 4. Conclusion; Acknowledgements; References; Millimeter Wave to Terahertz in CMOS K. K. O, S. Sankaran, C. Cao, E.-Y. Seok, D. Shim, C. Mao and R. Han; 1. Introduction; 2. Transistors and Diodes in CMOS; 2.1. Speed Performance of NMOS Transistor; 2.2. Schottky Diode and Other devices for THz detection; 3. Signal Sources; 3.1. A. Fundamental Mode VCO; 3.2. Push-Push VCO; 3.3. Phase Locked Loop
4. Detector Circuits5. Conclusions; 6. Acknowledgments; References; The Effects of Increasing AlN Mole Fraction on the Performance of AlGaN Active Regions Containing Nanometer Scale Compositionally Inhomogeneities A. V. Sampath, M. L. Reed, C. Moe, G. A. Garrett, E. D. Readinger, W. L. Sarney, H. Shen, M. Wraback, C. Ch; 1. Introduction; 2. Method; 3. Results; 3.1. Temperature dependent cw-Pl studies; 3.2. Time resolved photoluminescence studies; 3.3. Transmission electron microscopy studies; 3.4. 290 nm Double Heterostructure Ultraviolet Light Emitting Diodes; 4. Discussion; 5. Conclusions
6. Acknowledgements
Record Nr. UNINA-9910966824503321
Hackensack, N.J., : World Scientific, 2010
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Advanced Ultra Low-Power Semiconductor Devices : Design and Applications
Advanced Ultra Low-Power Semiconductor Devices : Design and Applications
Autore Tayal Shubham
Edizione [1st ed.]
Pubbl/distr/stampa Newark : , : John Wiley & Sons, Incorporated, , 2023
Descrizione fisica 1 online resource (313 pages)
Altri autori (Persone) UpadhyayAbhishek Kumar
RahiShiromani Balmukund
SongYoung Suh
Soggetto topico Transistors
Metal oxide semiconductor field-effect transistors
ISBN 9781394167647
1394167644
9781394167630
1394167636
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover -- Title Page -- Copyright Page -- Contents -- Preface -- Chapter 1 Subthreshold Transistors: Concept and Technology -- 1.1 Introduction -- 1.2 Major Sources of Leakage and Possible Methods of Prevention -- 1.2.1 Leakage Mechanisms in MOS Transistors -- 1.2.1.1 Current I1 -- 1.2.1.2 Current I2 -- 1.2.1.3 Current I3 -- 1.2.1.4 Current I4 -- 1.2.1.5 Current I5 -- 1.2.1.6 Current I6 -- 1.2.2 Leakage Reduction Techniques -- 1.2.2.1 Leakage Reduction by Channel Processing -- 1.2.2.2 Leakage Reduction Through Different Circuit Techniques -- 1.2.2.3 Scaling of Supply Voltage -- 1.3 Possibilities and Challenges -- 1.4 Conclusions -- References -- Chapter 2 Introduction to Conventional MOSFET and Advanced Transistor TFET -- 2.1 Introduction -- 2.2 Device Structure -- 2.3 TFET Principle of Operation -- 2.3.1 OFF State -- 2.3.2 ON State -- 2.4 Material Characterization -- 2.4.1 Group IV Materials -- 2.4.2 Group III-V Materials -- 2.4.3 Heterostructures -- 2.4.4 2D Materials -- 2.5 Characteristics of TFET -- 2.5.1 Subthreshold Swing -- 2.5.2 ION/IOFF Ratio -- 2.5.3 Ambipolar Effect -- 2.6 Comparison of OFF-State Characteristics -- 2.7 Phonon Scattering's Impact -- 2.8 ON-State Performance Comparison -- 2.9 Performance Analysis Based on Intrinsic Delay -- 2.10 Bandgap's Effect on Device Performance -- 2.11 MOSFET and TFET Scaling Behaviour -- 2.12 Surface Potential of an N-TFET and N-MOSFET -- 2.13 Professional Advantages of TFET over MOSFET -- 2.14 Conclusion -- References -- Chapter 3 Operation Principle and Fabrication of TFET -- 3.1 Introduction -- 3.2 Planar MOSFET's Limitations -- 3.2.1 Effects of Short Channels -- 3.3 Demand for Low Power Operation -- 3.4 TFET: Operation Principle of TFET -- 3.5 TFET: Recent Design Issues in TFET -- 3.5.1 TFET: Subthreshold Swing Perspective -- 3.5.2 TFET: Power Consumption Perspective.
3.6 TFET: Modeling and Application -- 3.6.1 TFET: Modeling -- 3.6.2 TFET: Application -- 3.7 TFET: Fabrication Perspective -- 3.8 TFET: Applications and Future of Low-Power Electronics -- 3.9 Expected Challenges in Replacing MOSFET with TFET -- 3.10 Conclusion -- References -- Chapter 4 Mathematical Modeling of TFET and Its Future Applications: Ultra Low.Power SRAM Circuit and III-IV TFET -- 4.1 Introduction -- 4.2 Modeling Approaches -- 4.2.1 Atomistic Modeling -- 4.2.2 Analytical Modeling -- 4.3 Structure -- 4.3.1 Effect Transistor -- 4.3.2 Compact Models -- 4.4 Applications of Tunnel Field-Effect Transistor -- 4.4.1 TFET for Biosensor Applications -- 4.4.2 TFET-Based Memory Devices -- 4.4.3 TFETs for Mixed Signal Applications -- 4.4.4 TFETs for Analog/RF Applications -- 4.4.5 TFETs for Low-Power Applications -- 4.5 Road Ahead for Tunnel Field Effect Transistors -- References -- Chapter 5 Analysis of Channel Doping Variation on Transfer Characteristics to High Frequency Performance of F-TFET -- 5.1 Introduction -- 5.2 Simulated Device Structure and Parameters -- 5.3 DC Characteristics -- 5.4 Analysis of Analog/RF FOMs -- 5.5 Conclusion -- References -- Chapter 6 Comparative Study of Gate Engineered TFETs and Optimization of Ferroelectric Heterogate TFET Structure -- 6.1 Introduction -- 6.2 Study of Different TFET Structures -- 6.2.1 Simulation Configuration -- 6.2.2 Comparison of Electrical Parameters of Different Structures of TFET -- 6.3 Proposed Structure -- 6.4 Results and Discussion -- 6.4.1 2-D Model for Surface Potential -- 6.4.2 Study of Electrical Characteristics -- 6.4.2.1 Average Subthreshold Swing and ION/IOFF -- 6.4.2.2 DIBL -- 6.4.2.3 RDF Effect -- 6.4.2.4 Temperature Dependence -- 6.4.2.5 Study of Interface Traps -- 6.4.3 Memory Window -- 6.5 Conclusion -- 6.6 Future Scope -- References.
Chapter 7 State of the Art Tunnel FETs for Low Power Memory Applications -- 7.1 Static Random Access Memory -- 7.1.1 Working of 6T-SRAM Cell -- 7.1.1.1 Read Operation -- 7.1.1.2 Write Operation -- 7.2 Performance Parameters of SRAM Cell -- 7.3 TFET-Based SRAM Cell Design -- 7.3.1 6T SRAM Designs -- 7.3.2 7T- SRAM Cell Design -- 7.3.3 8T- SRAM Cell -- 7.3.4 10 T- SRAM Cell -- 7.3.5 SRAM Cell Design Based on Negative Differential Resistance Property -- 7.4 Conclusion -- References -- Chapter 8 Epitaxial Layer-Based Si/SiGe Hetero-Junction Line Tunnel FETs: A Physical Insight -- 8.1 Fundamental Limitation of CMOS: Tunnel FETs -- 8.2 Working Principle of Tunnel FET -- 8.3 Point and Line TFETs: Tunneling Direction -- 8.4 Perspective of Line TFETs -- 8.4.1 Planar Line Tunnel FETs -- 8.4.2 3D Line TFETs -- 8.5 Analytical Models of Line TFETs -- 8.6 Line TFETs for Analog & -- Digital Circuits Design -- 8.7 Other Steep Slope Devices -- 8.8 Conclusion -- References -- Chapter 9 Investigation of Thermal Performance on Conventional and Junctionless Nanosheet Field Effect Transistors -- 9.1 Introduction -- 9.2 Device Simulation Details -- 9.3 Results and Discussion -- 9.3.1 Comparison of Thermal Characteristics of Conventional (CL) and Junctionless (JL) NSFET -- 9.3.2 Comparison of Thermal Performance of High-k Gate Dielectrics for CL NSFET and JL NSFET -- 9.3.3 Comparison of Thermal Performance of Spacer Dielectrics for CL NSFET and JL NSFET -- 9.4 Conclusion -- Acknowledgement -- References -- Chapter 10 Introduction to Newly Adopted NCFET and Ferroelectrics for Low-Power Application -- 10.1 Introduction -- 10.2 NCFET and Its Design Constraints -- 10.2.1 Ferroelectric Materials -- 10.2.2 NCFET Structure -- 10.2.3 Capacitance Matching and Ferroelectric Parameters -- 10.3 NCFET for Low-Power Applications -- 10.3.1 NCFET for Circuit and System Design.
10.3.2 Impact of Process Variations on NCFET -- 10.3.3 Analytical Models for NCFET -- 10.4 Summary -- References -- Chapter 11 Application of Ferroelectrics: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses -- 11.1 Introduction -- 11.2 Ferroelectricity in Hafnium Oxide -- 11.2.1 Thermodynamic and Kinetic Origin of the Ferroelectric Phase -- 11.2.2 Microstructure-Based Variability in Ferroelectric Response -- 11.3 IGZO Based Ferroelectric Thin Film Transistor -- 11.3.1 Integration and Performance of FeTFT Devices -- 11.3.2 Characterization of FeTFT-Based Neuromorphic Devices -- 11.4 Applications in Neural Networks -- 11.4.1 Monolithic 3D Inference Engine -- 11.5 Conclusion -- References -- Chapter 12 Radiation Effects and Their Impact on SRAM Design: A Comprehensive Survey with Contemporary Challenges -- 12.1 Introduction -- 12.2 Literature Survey -- 12.3 Impact of Radiation Effects on Sram Cells -- 12.4 Results and Discussion -- 12.5 Conclusion -- Declarations -- Data Availability -- References -- Chapter 13 Final Summary and Future of Advanced Ultra Low Power Metal Oxide Semiconductor Field Effect Transistors -- 13.1 Introduction -- 13.2 Challenges in Future Ultra-Low Power Semiconductors -- 13.3 Conclusion -- References -- Index -- EULA.
Record Nr. UNINA-9911019744103321
Tayal Shubham  
Newark : , : John Wiley & Sons, Incorporated, , 2023
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
ANSI/IEEE Std 449-1984 : IEEE Standard for Ferroresonant Voltage Regulators / / Institute of Electrical and Electronics Engineers
ANSI/IEEE Std 449-1984 : IEEE Standard for Ferroresonant Voltage Regulators / / Institute of Electrical and Electronics Engineers
Pubbl/distr/stampa New York, N.Y. : , : IEEE, , 1982
Descrizione fisica 1 online resource (26 pages) : illustrations
Disciplina 621.3815
Soggetto topico Voltage regulators
Transistors
ISBN 1-5044-0346-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti ANSI/IEEE Std 449-1984
Record Nr. UNINA-9910136434303321
New York, N.Y. : , : IEEE, , 1982
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui