Info
A current source method for tq measurement of fast switching thyristors [[electronic resource] /] / Janis M. Niedra
| A current source method for tq measurement of fast switching thyristors [[electronic resource] /] / Janis M. Niedra |
| Autore | Niedra Janis M |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006] |
| Descrizione fisica | 1 online resource (7 pages) : illustrations |
| Collana | NASA/CR |
| Soggetto topico |
Pulse generators
Switching Thyristors Circuits |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Current source method for t[subscript q] measurement of fast switching thyristors |
| Record Nr. | UNINA-9910699313503321 |
Niedra Janis M
|
||
| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Electrical impact of SiC structural crystal defects on high electric field devices / / Philip G. Neudeck
| Electrical impact of SiC structural crystal defects on high electric field devices / / Philip G. Neudeck |
| Autore | Neudeck Philip G. |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , December 1999 |
| Descrizione fisica | 1 online resource (6 pages) : illustrations |
| Collana | NASA/TM |
| Soggetto topico |
Crystal defects
Silicon Electric fields Electrical properties Switching |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Electrical impact of silicon carbide structural crystal defects on high electric field devices |
| Record Nr. | UNINA-9910706124003321 |
|
Neudeck Philip G.
|
||
| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , December 1999 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C [[electronic resource] /] / Janis M. Niedra, Gene E. Schwarze ; prepared for the Third International Energy Conversion Engineering Conference sponsored by the American Institute of Aeronautics and Astronautics, San Francisco, California, August 15-18, 2005
| Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C [[electronic resource] /] / Janis M. Niedra, Gene E. Schwarze ; prepared for the Third International Energy Conversion Engineering Conference sponsored by the American Institute of Aeronautics and Astronautics, San Francisco, California, August 15-18, 2005 |
| Autore | Niedra Janis M |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2005] |
| Descrizione fisica | 1 online resource (9 pages) : illustrations |
| Altri autori (Persone) | SchwarzeGene E |
| Collana | NASA/TM- |
| Soggetto topico |
Static characteristics
Silicon carbides Transistors Switching Electric potential P-n junctions |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910697164203321 |
|
Niedra Janis M
|
||
| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2005] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C [[electronic resource] /] / Janis M. Niedra
| Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C [[electronic resource] /] / Janis M. Niedra |
| Autore | Niedra Janis M |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006] |
| Descrizione fisica | 1 online resource (6 pages) : illustrations |
| Collana | NASA/CR- |
| Soggetto topico |
Junction transistors
High temperature Bipolar transistors Switching Static loads Electric potential |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910699314303321 |
|
Niedra Janis M
|
||
| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Wind tunnel testing of a one-dimensional laser beam scanning and laser sheet approach to shock sensing [[electronic resource] /] / Roger Tokars ... [and others]
| Wind tunnel testing of a one-dimensional laser beam scanning and laser sheet approach to shock sensing [[electronic resource] /] / Roger Tokars ... [and others] |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2012] |
| Descrizione fisica | 1 online resource (18 pages) : color illustrations |
| Altri autori (Persone) | TokarsRoger |
| Collana | NASA/TM |
| Soggetto topico |
Supersonic wind tunnels
Imaging techniques Laser beams Systems engineering Laser modes Switching |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910702006403321 |
| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2012] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Soggetto topico
-
Switching
(5)
- Electric potential (2)
- Bipolar transistors (1)
- Circuits (1)
- Crystal defects (1)