Ion implantation, sputtering and their applications / by P.D. Townsend, J.C. Kelly, N.E.W. Hartley |
Autore | Townsend, P.D. |
Pubbl/distr/stampa | London ; New York : Academic Press, 1976 |
Descrizione fisica | ix, 333 p. : ill. ; 24 cm. |
Altri autori (Persone) |
Kelly, John Clive
Hartley, N.E.W. |
Soggetto topico |
Ion implantation
Sputtering (Physics) |
ISBN | 0126969507 |
Classificazione |
53.7.16
53.7.18 530.4'1 QC702.7 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNISALENTO-991001037629707536 |
Townsend, P.D. | ||
London ; New York : Academic Press, 1976 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. del Salento | ||
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Sputtering by particle bombardment : experiments and computer calculations from threshold to MeV energies / / Rainer Behrisch, Wolfgang Eckstein (eds.) |
Edizione | [1st ed. 2007.] |
Pubbl/distr/stampa | Berlin, : Springer, c2007 |
Descrizione fisica | 1 online resource (526 p.) |
Disciplina | 530.416 |
Altri autori (Persone) |
BehrischRainer
EcksteinWolfgang |
Collana | Topics in applied physics |
Soggetto topico |
Solid state physics
Sputtering (Physics) |
ISBN |
1-280-96030-2
9786610960309 3-540-44502-1 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | and Overview -- Computer Simulation of the Sputtering Process -- Sputtering Yields -- Results of Molecular Dynamics Calculations -- Energy and Angular Distributions of Sputtered Species -- Chemical Sputtering -- Electronic Sputtering with Swift Heavy Ions. |
Altri titoli varianti | Experiments and computer calculations from threshold to MeV energies |
Record Nr. | UNINA-9910634050103321 |
Berlin, : Springer, c2007 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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Sputtering materials for VLSI and thin film devices / / by Jaydeep Sarkar |
Autore | Sarkar Jaydeep |
Edizione | [First edition.] |
Pubbl/distr/stampa | Oxford ; ; Boston : , : William Andrew Publishing, , 2014 |
Descrizione fisica | 1 online resource (614 p.) |
Disciplina | 621.381 |
Soggetto topico |
Microelectronics - Materials
Flat panel displays - Materials Sputtering (Physics) |
Soggetto genere / forma | Electronic books. |
ISBN |
0-12-810080-X
0-8155-1987-7 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Front Cover; Sputtering Materials for VLSI and Thin Film Devices; Copyright Page; Contents; Preface; 1 Sputtering Targets and Sputtered Films for the Microelectronic Industry; 1.1 Materials for microelectronics; 1.1.1 Introduction; 1.1.1.1 Electrical conductivity; 1.1.2 Conductors; 1.1.3 Semiconductors; 1.1.4 Insulators; 1.2 Scope of sputtering in microelectronics; 1.3 Sputtering materials for integrated circuits; 1.3.1 Introduction; 1.3.2 Silicide contact; 1.3.3 Conductor, liner, barrier and anti-reflection coating; 1.3.4 Assembly and packaging (back-end processes)
1.3.4.1 Under bump metallization (UBM) and bond pad1.3.4.2 Through-silicon-via (TSV); 1.4 Sputtering materials for liquid crystal displays; 1.4.1 Introduction; 1.4.2 Active-matrix liquid crystal displays; 1.4.2.1 TFT array fabrication; 1.4.2.2 Cell assembly and Module assembly fabrication; 1.5 Sputtering materials for magnetic storage systems; 1.5.1 Introduction; 1.5.2 Thin film heads; 1.5.2.1 Inductive head; 1.5.2.2 Magnetoresistive head (MR heads); 1.5.2.3 Giant magnetoresistive head (GMR head); 1.5.3 Magnetic recording media; 1.6 Sputtering materials for optical storage media 1.7 Sputtering materials for photovoltaic devices1.7.1 Silicon wafer based solar cells; 1.7.2 Thin film solar cells; 1.8 Sputtering target industry; References; 2 Sputtering and Thin Film Deposition; 2.1 Introduction; 2.2 Physical vapor deposition; 2.3 Plasma and glow discharge; 2.4 Sputter deposition of thin films; 2.4.1 DC sputtering; 2.4.2 RF sputtering; 2.4.3 Reactive sputtering; 2.4.4 Magnetron sputtering; 2.4.4.1 Directional sputter deposition; 2.4.4.1.1 Long-throw sputter deposition; 2.4.4.1.2 Collimated sputter deposition; 2.4.4.2 Ionized physical vapor deposition (I-PVD) 2.4.4.3 Hollow cathode magnetron2.4.4.4 Magnetrons for large area coating; 2.5 Thin film characteristics; References; 3 Performance of Sputtering Targets and Productivity; 3.1 Introduction; 3.2 Target chemistry; 3.3 Target metallurgy; 3.3.1 Grain size inhomogeneity and banding of grains; 3.3.2 Second-phase particles, inclusions and porosity; 3.3.3 Preferred orientation of grains; 3.3.4 Sputter surface roughness and overall finish; 3.3.5 Particle performance; 3.3.6 Target bond characteristics; 3.4 Ferromagnetic targets; 3.5 Target cleaning and packaging; 3.6 Target burn-in 3.7 Target utilizationReferences; 4 Sputtering Target Manufacturing; 4.1 Introduction; 4.2 Designing sputtering targets; 4.3 Target material fabrication; 4.3.1 Liquid metallurgy processing of targets; 4.3.1.1 Cast structure; 4.3.1.1.1 Phase diagram and microstructure; 4.3.1.1.2 Melting and casting practice; 4.3.1.2 Segregation and inclusion; 4.3.1.3 Pipe and porosity; 4.3.2 Powder metallurgy processing of targets; 4.3.2.1 Powder preparation; 4.3.2.2 Powder compaction; 4.3.2.3 Powder consolidation using sintering; 4.3.2.3.1 Solid phase sintering; 4.3.2.3.2 Liquid phase sintering 4.3.2.3.3 Consolidation practice |
Record Nr. | UNINA-9910453224803321 |
Sarkar Jaydeep | ||
Oxford ; ; Boston : , : William Andrew Publishing, , 2014 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Sputtering materials for VLSI and thin film devices / / by Jaydeep Sarkar |
Autore | Sarkar Jaydeep |
Edizione | [First edition.] |
Pubbl/distr/stampa | Oxford ; ; Boston : , : William Andrew Publishing, , 2014 |
Descrizione fisica | 1 online resource (614 p.) |
Disciplina | 621.381 |
Soggetto topico |
Microelectronics - Materials
Flat panel displays - Materials Sputtering (Physics) |
ISBN |
0-12-810080-X
0-8155-1987-7 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Front Cover; Sputtering Materials for VLSI and Thin Film Devices; Copyright Page; Contents; Preface; 1 Sputtering Targets and Sputtered Films for the Microelectronic Industry; 1.1 Materials for microelectronics; 1.1.1 Introduction; 1.1.1.1 Electrical conductivity; 1.1.2 Conductors; 1.1.3 Semiconductors; 1.1.4 Insulators; 1.2 Scope of sputtering in microelectronics; 1.3 Sputtering materials for integrated circuits; 1.3.1 Introduction; 1.3.2 Silicide contact; 1.3.3 Conductor, liner, barrier and anti-reflection coating; 1.3.4 Assembly and packaging (back-end processes)
1.3.4.1 Under bump metallization (UBM) and bond pad1.3.4.2 Through-silicon-via (TSV); 1.4 Sputtering materials for liquid crystal displays; 1.4.1 Introduction; 1.4.2 Active-matrix liquid crystal displays; 1.4.2.1 TFT array fabrication; 1.4.2.2 Cell assembly and Module assembly fabrication; 1.5 Sputtering materials for magnetic storage systems; 1.5.1 Introduction; 1.5.2 Thin film heads; 1.5.2.1 Inductive head; 1.5.2.2 Magnetoresistive head (MR heads); 1.5.2.3 Giant magnetoresistive head (GMR head); 1.5.3 Magnetic recording media; 1.6 Sputtering materials for optical storage media 1.7 Sputtering materials for photovoltaic devices1.7.1 Silicon wafer based solar cells; 1.7.2 Thin film solar cells; 1.8 Sputtering target industry; References; 2 Sputtering and Thin Film Deposition; 2.1 Introduction; 2.2 Physical vapor deposition; 2.3 Plasma and glow discharge; 2.4 Sputter deposition of thin films; 2.4.1 DC sputtering; 2.4.2 RF sputtering; 2.4.3 Reactive sputtering; 2.4.4 Magnetron sputtering; 2.4.4.1 Directional sputter deposition; 2.4.4.1.1 Long-throw sputter deposition; 2.4.4.1.2 Collimated sputter deposition; 2.4.4.2 Ionized physical vapor deposition (I-PVD) 2.4.4.3 Hollow cathode magnetron2.4.4.4 Magnetrons for large area coating; 2.5 Thin film characteristics; References; 3 Performance of Sputtering Targets and Productivity; 3.1 Introduction; 3.2 Target chemistry; 3.3 Target metallurgy; 3.3.1 Grain size inhomogeneity and banding of grains; 3.3.2 Second-phase particles, inclusions and porosity; 3.3.3 Preferred orientation of grains; 3.3.4 Sputter surface roughness and overall finish; 3.3.5 Particle performance; 3.3.6 Target bond characteristics; 3.4 Ferromagnetic targets; 3.5 Target cleaning and packaging; 3.6 Target burn-in 3.7 Target utilizationReferences; 4 Sputtering Target Manufacturing; 4.1 Introduction; 4.2 Designing sputtering targets; 4.3 Target material fabrication; 4.3.1 Liquid metallurgy processing of targets; 4.3.1.1 Cast structure; 4.3.1.1.1 Phase diagram and microstructure; 4.3.1.1.2 Melting and casting practice; 4.3.1.2 Segregation and inclusion; 4.3.1.3 Pipe and porosity; 4.3.2 Powder metallurgy processing of targets; 4.3.2.1 Powder preparation; 4.3.2.2 Powder compaction; 4.3.2.3 Powder consolidation using sintering; 4.3.2.3.1 Solid phase sintering; 4.3.2.3.2 Liquid phase sintering 4.3.2.3.3 Consolidation practice |
Record Nr. | UNINA-9910790864503321 |
Sarkar Jaydeep | ||
Oxford ; ; Boston : , : William Andrew Publishing, , 2014 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Sputtering materials for VLSI and thin film devices / / by Jaydeep Sarkar |
Autore | Sarkar Jaydeep |
Edizione | [First edition.] |
Pubbl/distr/stampa | Oxford ; ; Boston : , : William Andrew Publishing, , 2014 |
Descrizione fisica | 1 online resource (614 p.) |
Disciplina | 621.381 |
Soggetto topico |
Microelectronics - Materials
Flat panel displays - Materials Sputtering (Physics) |
ISBN |
0-12-810080-X
0-8155-1987-7 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Front Cover; Sputtering Materials for VLSI and Thin Film Devices; Copyright Page; Contents; Preface; 1 Sputtering Targets and Sputtered Films for the Microelectronic Industry; 1.1 Materials for microelectronics; 1.1.1 Introduction; 1.1.1.1 Electrical conductivity; 1.1.2 Conductors; 1.1.3 Semiconductors; 1.1.4 Insulators; 1.2 Scope of sputtering in microelectronics; 1.3 Sputtering materials for integrated circuits; 1.3.1 Introduction; 1.3.2 Silicide contact; 1.3.3 Conductor, liner, barrier and anti-reflection coating; 1.3.4 Assembly and packaging (back-end processes)
1.3.4.1 Under bump metallization (UBM) and bond pad1.3.4.2 Through-silicon-via (TSV); 1.4 Sputtering materials for liquid crystal displays; 1.4.1 Introduction; 1.4.2 Active-matrix liquid crystal displays; 1.4.2.1 TFT array fabrication; 1.4.2.2 Cell assembly and Module assembly fabrication; 1.5 Sputtering materials for magnetic storage systems; 1.5.1 Introduction; 1.5.2 Thin film heads; 1.5.2.1 Inductive head; 1.5.2.2 Magnetoresistive head (MR heads); 1.5.2.3 Giant magnetoresistive head (GMR head); 1.5.3 Magnetic recording media; 1.6 Sputtering materials for optical storage media 1.7 Sputtering materials for photovoltaic devices1.7.1 Silicon wafer based solar cells; 1.7.2 Thin film solar cells; 1.8 Sputtering target industry; References; 2 Sputtering and Thin Film Deposition; 2.1 Introduction; 2.2 Physical vapor deposition; 2.3 Plasma and glow discharge; 2.4 Sputter deposition of thin films; 2.4.1 DC sputtering; 2.4.2 RF sputtering; 2.4.3 Reactive sputtering; 2.4.4 Magnetron sputtering; 2.4.4.1 Directional sputter deposition; 2.4.4.1.1 Long-throw sputter deposition; 2.4.4.1.2 Collimated sputter deposition; 2.4.4.2 Ionized physical vapor deposition (I-PVD) 2.4.4.3 Hollow cathode magnetron2.4.4.4 Magnetrons for large area coating; 2.5 Thin film characteristics; References; 3 Performance of Sputtering Targets and Productivity; 3.1 Introduction; 3.2 Target chemistry; 3.3 Target metallurgy; 3.3.1 Grain size inhomogeneity and banding of grains; 3.3.2 Second-phase particles, inclusions and porosity; 3.3.3 Preferred orientation of grains; 3.3.4 Sputter surface roughness and overall finish; 3.3.5 Particle performance; 3.3.6 Target bond characteristics; 3.4 Ferromagnetic targets; 3.5 Target cleaning and packaging; 3.6 Target burn-in 3.7 Target utilizationReferences; 4 Sputtering Target Manufacturing; 4.1 Introduction; 4.2 Designing sputtering targets; 4.3 Target material fabrication; 4.3.1 Liquid metallurgy processing of targets; 4.3.1.1 Cast structure; 4.3.1.1.1 Phase diagram and microstructure; 4.3.1.1.2 Melting and casting practice; 4.3.1.2 Segregation and inclusion; 4.3.1.3 Pipe and porosity; 4.3.2 Powder metallurgy processing of targets; 4.3.2.1 Powder preparation; 4.3.2.2 Powder compaction; 4.3.2.3 Powder consolidation using sintering; 4.3.2.3.1 Solid phase sintering; 4.3.2.3.2 Liquid phase sintering 4.3.2.3.3 Consolidation practice |
Record Nr. | UNINA-9910812651903321 |
Sarkar Jaydeep | ||
Oxford ; ; Boston : , : William Andrew Publishing, , 2014 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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