Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Band theory and electronic properties of solids / / John Singleton
| Band theory and electronic properties of solids / / John Singleton |
| Autore | Singleton John <1960 December 11-> |
| Pubbl/distr/stampa | Oxford : , : Oxford University Press, , 2012 |
| Descrizione fisica | 1 online resource (xvi, 222 pages) : illustrations |
| Disciplina | 530.412 |
| Soggetto topico |
Energy-band theory of solids
Solids - Electric properties |
| Soggetto genere / forma | Electronic books. |
| ISBN | 0-19-105746-0 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910467697703321 |
Singleton John <1960 December 11->
|
||
| Oxford : , : Oxford University Press, , 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Band theory and electronic properties of solids / / John Singleton
| Band theory and electronic properties of solids / / John Singleton |
| Autore | Singleton John <1960 December 11-> |
| Pubbl/distr/stampa | Oxford : , : Oxford University Press, , 2012 |
| Descrizione fisica | 1 online resource (xvi, 222 pages) : illustrations |
| Disciplina | 530.412 |
| Soggetto topico |
Energy-band theory of solids
Solids - Electric properties |
| ISBN | 0-19-105746-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910793710203321 |
|
Singleton John <1960 December 11->
|
||
| Oxford : , : Oxford University Press, , 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Band theory and electronic properties of solids / / John Singleton
| Band theory and electronic properties of solids / / John Singleton |
| Autore | Singleton John <1960 December 11-> |
| Pubbl/distr/stampa | Oxford : , : Oxford University Press, , 2012 |
| Descrizione fisica | 1 online resource (xvi, 222 pages) : illustrations |
| Disciplina | 530.412 |
| Soggetto topico |
Energy-band theory of solids
Solids - Electric properties |
| ISBN | 0-19-105746-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910818833503321 |
|
Singleton John <1960 December 11->
|
||
| Oxford : , : Oxford University Press, , 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Charge transport in disordered solids with applications in electronics [[electronic resource] /] / edited by Sergei Baranovski
| Charge transport in disordered solids with applications in electronics [[electronic resource] /] / edited by Sergei Baranovski |
| Pubbl/distr/stampa | Hoboken, NJ, : Wiley, c2006 |
| Descrizione fisica | 1 online resource (499 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | BaranovskiSergei |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Amorphous semiconductors - Electric properties
Solids - Electric properties Semiconductors - Materials |
| ISBN |
1-280-64946-1
9786610649464 0-470-09506-7 0-470-09505-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Contents; Series Preface; Preface; 1: Charge Transport via Delocalized States in Disordered Materials; 1.1 INTRODUCTION; 1.2 TRANSPORT BY ELECTRONS IN EXTENDED STATES FAR FROM THE MOBILITY EDGES; 1.2.1 Weak-scattering theories; 1.2.2 Weak localization; 1.2.3 Interaction effects; 1.3 SCALING THEORY OF LOCALIZATION; 1.3.1 Main ideas of the scaling theory of localization; 1.3.2 The main equations of one-parameter scaling; 1.3.3 Model solutions; 1.3.4 Some predictions of the scaling theory; 1.3.5 Minimum metallic conductivity; 1.4 EXTENDED-STATE CONDUCTION IN THREE DIMENSIONS
1.4.1 Activated conduction1.4.2 Extended-state conduction near the metal-insulator transition; 1.5 APPARENT MOBILITY EDGE AND EXTENDED-STATE CONDUCTION IN TWO-DIMENSIONAL SYSTEMS; 1.5.1 Experimental studies of the mobility edge in low-mobility two-dimensional systems; 1.5.2 Evidence for a true metal-insulator transition in high-mobility two-dimensional systems; 1.5.3 Evidence against a true metal-insulator transition in two-dimensional systems; 1.5.4 Temperature-dependent charge carrier scattering; 1.6 CONCLUSIONS; REFERENCES; 2: Description of Charge Transport in Amorphous Semiconductors 2.1 INTRODUCTION2.2 GENERAL REMARKS ON CHARGE TRANSPORT IN DISORDERED MATERIALS; 2.3 HOPPING CHARGE TRANSPORT IN DISORDERED MATERIALS VIA LOCALIZED STATES; 2.3.1 Nearest-neighbor hopping; 2.3.2 Variable-range hopping; 2.4 DESCRIPTION OF CHARGE-CARRIER ENERGY RELAXATION AND HOPPING CONDUCTION IN INORGANIC NONCRYSTALLINE MATERIALS; 2.4.1 Dispersive transport in disordered materials; 2.4.2 The concept of the transport energy; 2.5 EINSTEIN'S RELATIONSHIP FOR HOPPING ELECTRONS; 2.5.1 Nonequilibrium charge carriers; 2.5.2 Equilibrium charge carriers; 2.6 STEADY-STATE PHOTOCONDUCTIVITY 2.6.1 Low-temperature photoconductivity2.6.2 Temperature dependence of the photoconductivity; 2.7 THERMALLY STIMULATED CURRENTS-A TOOL TO DETERMINE DOS?; 2.8 DARK CONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS; 2.9 NONLINEAR FIELD EFFECTS; 2.10 CONCLUDING REMARKS; REFERENCES; 3: Hydrogenated Amorphous Silicon-Material Properties and Device Applications; 3.1 INTRODUCTION; 3.2 PREPARATION AND STRUCTURAL PROPERTIES OF AMORPHOUS SILICON; 3.3 DENSITY OF STATES DISTRIBUTION IN THE ENERGY GAP; 3.3.1 Model of the density of states distribution; 3.3.2 Band-tail states; 3.3.3 Deep defect states 3.4 OPTICAL PROPERTIES3.5 TRANSPORT PROPERTIES; 3.6 RECOMBINATION OF EXCESS CARRIERS; 3.6.1 Low-temperature regime (T 60 K); 3.7 DEVICE APPLICATIONS; 3.7.1 Schottky barrier diodes; 3.7.2 p-i-n diodes; 3.7.3 Thin-film transistors; 3.8 THIN-FILM SOLAR CELLS; REFERENCES; 4: Applications of Disordered Semiconductors in Modern Electronics: Selected Examples; 4.1 PERSPECTIVES ON AMORPHOUS SEMICONDUCTORS; 4.2 DIRECT CONVERSION DIGITAL X-RAY IMAGE DETECTORS; 4.3 X-RAY PHOTOCONDUCTORS; 4.4 STABILIZED AMORPHOUS SELENIUM (a-Se) 4.5 AVALANCHE MULTIPLICATION AND ULTRA-HIGH-SENSITIVE HARP VIDEO TUBE |
| Record Nr. | UNINA-9910143716103321 |
| Hoboken, NJ, : Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Charge transport in disordered solids with applications in electronics [[electronic resource] /] / edited by Sergei Baranovski
| Charge transport in disordered solids with applications in electronics [[electronic resource] /] / edited by Sergei Baranovski |
| Pubbl/distr/stampa | Hoboken, NJ, : Wiley, c2006 |
| Descrizione fisica | 1 online resource (499 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | BaranovskiSergei |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Amorphous semiconductors - Electric properties
Solids - Electric properties Semiconductors - Materials |
| ISBN |
1-280-64946-1
9786610649464 0-470-09506-7 0-470-09505-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Contents; Series Preface; Preface; 1: Charge Transport via Delocalized States in Disordered Materials; 1.1 INTRODUCTION; 1.2 TRANSPORT BY ELECTRONS IN EXTENDED STATES FAR FROM THE MOBILITY EDGES; 1.2.1 Weak-scattering theories; 1.2.2 Weak localization; 1.2.3 Interaction effects; 1.3 SCALING THEORY OF LOCALIZATION; 1.3.1 Main ideas of the scaling theory of localization; 1.3.2 The main equations of one-parameter scaling; 1.3.3 Model solutions; 1.3.4 Some predictions of the scaling theory; 1.3.5 Minimum metallic conductivity; 1.4 EXTENDED-STATE CONDUCTION IN THREE DIMENSIONS
1.4.1 Activated conduction1.4.2 Extended-state conduction near the metal-insulator transition; 1.5 APPARENT MOBILITY EDGE AND EXTENDED-STATE CONDUCTION IN TWO-DIMENSIONAL SYSTEMS; 1.5.1 Experimental studies of the mobility edge in low-mobility two-dimensional systems; 1.5.2 Evidence for a true metal-insulator transition in high-mobility two-dimensional systems; 1.5.3 Evidence against a true metal-insulator transition in two-dimensional systems; 1.5.4 Temperature-dependent charge carrier scattering; 1.6 CONCLUSIONS; REFERENCES; 2: Description of Charge Transport in Amorphous Semiconductors 2.1 INTRODUCTION2.2 GENERAL REMARKS ON CHARGE TRANSPORT IN DISORDERED MATERIALS; 2.3 HOPPING CHARGE TRANSPORT IN DISORDERED MATERIALS VIA LOCALIZED STATES; 2.3.1 Nearest-neighbor hopping; 2.3.2 Variable-range hopping; 2.4 DESCRIPTION OF CHARGE-CARRIER ENERGY RELAXATION AND HOPPING CONDUCTION IN INORGANIC NONCRYSTALLINE MATERIALS; 2.4.1 Dispersive transport in disordered materials; 2.4.2 The concept of the transport energy; 2.5 EINSTEIN'S RELATIONSHIP FOR HOPPING ELECTRONS; 2.5.1 Nonequilibrium charge carriers; 2.5.2 Equilibrium charge carriers; 2.6 STEADY-STATE PHOTOCONDUCTIVITY 2.6.1 Low-temperature photoconductivity2.6.2 Temperature dependence of the photoconductivity; 2.7 THERMALLY STIMULATED CURRENTS-A TOOL TO DETERMINE DOS?; 2.8 DARK CONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS; 2.9 NONLINEAR FIELD EFFECTS; 2.10 CONCLUDING REMARKS; REFERENCES; 3: Hydrogenated Amorphous Silicon-Material Properties and Device Applications; 3.1 INTRODUCTION; 3.2 PREPARATION AND STRUCTURAL PROPERTIES OF AMORPHOUS SILICON; 3.3 DENSITY OF STATES DISTRIBUTION IN THE ENERGY GAP; 3.3.1 Model of the density of states distribution; 3.3.2 Band-tail states; 3.3.3 Deep defect states 3.4 OPTICAL PROPERTIES3.5 TRANSPORT PROPERTIES; 3.6 RECOMBINATION OF EXCESS CARRIERS; 3.6.1 Low-temperature regime (T 60 K); 3.7 DEVICE APPLICATIONS; 3.7.1 Schottky barrier diodes; 3.7.2 p-i-n diodes; 3.7.3 Thin-film transistors; 3.8 THIN-FILM SOLAR CELLS; REFERENCES; 4: Applications of Disordered Semiconductors in Modern Electronics: Selected Examples; 4.1 PERSPECTIVES ON AMORPHOUS SEMICONDUCTORS; 4.2 DIRECT CONVERSION DIGITAL X-RAY IMAGE DETECTORS; 4.3 X-RAY PHOTOCONDUCTORS; 4.4 STABILIZED AMORPHOUS SELENIUM (a-Se) 4.5 AVALANCHE MULTIPLICATION AND ULTRA-HIGH-SENSITIVE HARP VIDEO TUBE |
| Record Nr. | UNINA-9910830902203321 |
| Hoboken, NJ, : Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Defects in solids [[electronic resource] /] / Richard J.D. Tilley
| Defects in solids [[electronic resource] /] / Richard J.D. Tilley |
| Autore | Tilley R. J. D |
| Pubbl/distr/stampa | Hoboken, N.J., : Wiley, c2008 |
| Descrizione fisica | 1 online resource (549 p.) |
| Disciplina |
620.1/1
620.11 |
| Collana | Special Topics in Inorganic Chemistry |
| Soggetto topico |
Solids - Defects
Solids - Electric properties Solids - Magnetic properties Solids - Optical properties |
| ISBN |
1-283-20329-4
9786613203298 0-470-38075-6 0-470-38073-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
DEFECTS IN SOLIDS; CONTENTS; Preface; 1. Point Defects; 1.1 Introduction; 1.2 Point and Electronic Defects in Crystalline Solids; 1.3 Electronic Properties: Doped Silicon and Germanium as Examples; 1.4 Optical Properties: F Centers and Ruby as Examples; 1.5 Bulk Properties; 1.5.1 Unit Cell Dimensions; 1.5.2 Density; 1.5.3 Volume; 1.5.4 Young's Modulus (the Elastic Modulus); 1.6 Thermoelectric Properties: The Seebeck Coefficient as an Example; 1.7 Point Defect Notation; 1.8 Charges on Defects; 1.8.1 Electrons and Electron Holes; 1.8.2 Atomic and Ionic Defects
1.9 Balanced Populations of Point Defects: Schottky and Frenkel Defects 1.9.1 Schottky Defects; 1.9.2 Frenkel Defects; 1.10 Antisite Defects; 1.11 Defect Formation and Reaction Equations; 1.11.1 Addition and Subtraction of Atoms; 1.11.2 Equation Formalism; 1.11.3 Formation of Antisite Defects; 1.11.4 Nickel Oxide; 1.11.5 Cadmium Oxide; 1.11.6 Calcia-stabilized Zirconia; 1.11.7 Ternary Oxides; 1.12 Combinations of Point Defects in Pure Materials; 1.13 Structural Consequences of Point Defect Populations; 1.14 Answers to Introductory Questions; Problems and Exercises; References; Further Reading 2. Intrinsic Point Defects in Stoichiometric Compounds 2.1 Equilibrium Population of Vacancies in a Monatomic Crystal; 2.2 Equilibrium Population of Self-Interstitials in a Monatomic Crystal; 2.3 Equilibrium Population of Schottky Defects in a Crystal; 2.4 Lithium Iodide Battery; 2.5 Equilibrium Population of Frenkel Defects in a Crystal; 2.6 Photographic Film; 2.7 Photochromic Glasses; 2.8 Equilibrium Population of Antisite Defects in a Crystal; 2.9 Intrinsic Defects: Trends and Further Considerations; 2.10 Computation of Defect Energies; 2.10.1 Defect Calculations 2.10.2 Point Defect Interactions 2.10.3 Atomistic Simulation; 2.10.4 The Shell Model; 2.10.5 Defect Formation Energy; 2.10.6 Quantum Mechanical Calculations; 2.11 Answers to Introductory Questions; Problems and Exercises; References; Further Reading; 3. Extended Defects; 3.1 Dislocations; 3.2 Edge Dislocations; 3.3 Screw Dislocations; 3.4 Mixed Dislocations; 3.5 Unit and Partial Dislocations; 3.6 Multiplication of Dislocations; 3.7 Interaction of Dislocations and Point Defects; 3.7.1 Dislocation Loops; 3.7.2 Dislocation Climb; 3.7.3 Decoration of Dislocations 3.8 Dislocations in Nonmetallic Crystals 3.9 Internal Boundaries; 3.10 Low-Angle Grain Boundaries; 3.11 Twin Boundaries; 3.12 Antiphase Boundaries; 3.13 Domains and Ferroic Materials; 3.13.1 Magnetic Structures; 3.13.2 Ferroelectric Structures; 3.13.3 Ferroic Structures; 3.14 External Surfaces and Grain Boundaries; 3.14.1 Optical Characteristics of Polycrystalline Solids; 3.14.2 Electronic Properties of Interfaces; 3.14.3 Varistors; 3.14.4 Positive Temperature Coefficient Thermistors; 3.15 Volume Defects and Precipitates; 3.16 Answers to Introductory Questions; Problems and Exercises Further Reading |
| Record Nr. | UNINA-9910144103303321 |
|
Tilley R. J. D
|
||
| Hoboken, N.J., : Wiley, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Defects in solids [[electronic resource] /] / Richard J.D. Tilley
| Defects in solids [[electronic resource] /] / Richard J.D. Tilley |
| Autore | Tilley R. J. D |
| Pubbl/distr/stampa | Hoboken, N.J., : Wiley, c2008 |
| Descrizione fisica | 1 online resource (549 p.) |
| Disciplina |
620.1/1
620.11 |
| Collana | Special Topics in Inorganic Chemistry |
| Soggetto topico |
Solids - Defects
Solids - Electric properties Solids - Magnetic properties Solids - Optical properties |
| ISBN |
1-283-20329-4
9786613203298 0-470-38075-6 0-470-38073-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
DEFECTS IN SOLIDS; CONTENTS; Preface; 1. Point Defects; 1.1 Introduction; 1.2 Point and Electronic Defects in Crystalline Solids; 1.3 Electronic Properties: Doped Silicon and Germanium as Examples; 1.4 Optical Properties: F Centers and Ruby as Examples; 1.5 Bulk Properties; 1.5.1 Unit Cell Dimensions; 1.5.2 Density; 1.5.3 Volume; 1.5.4 Young's Modulus (the Elastic Modulus); 1.6 Thermoelectric Properties: The Seebeck Coefficient as an Example; 1.7 Point Defect Notation; 1.8 Charges on Defects; 1.8.1 Electrons and Electron Holes; 1.8.2 Atomic and Ionic Defects
1.9 Balanced Populations of Point Defects: Schottky and Frenkel Defects 1.9.1 Schottky Defects; 1.9.2 Frenkel Defects; 1.10 Antisite Defects; 1.11 Defect Formation and Reaction Equations; 1.11.1 Addition and Subtraction of Atoms; 1.11.2 Equation Formalism; 1.11.3 Formation of Antisite Defects; 1.11.4 Nickel Oxide; 1.11.5 Cadmium Oxide; 1.11.6 Calcia-stabilized Zirconia; 1.11.7 Ternary Oxides; 1.12 Combinations of Point Defects in Pure Materials; 1.13 Structural Consequences of Point Defect Populations; 1.14 Answers to Introductory Questions; Problems and Exercises; References; Further Reading 2. Intrinsic Point Defects in Stoichiometric Compounds 2.1 Equilibrium Population of Vacancies in a Monatomic Crystal; 2.2 Equilibrium Population of Self-Interstitials in a Monatomic Crystal; 2.3 Equilibrium Population of Schottky Defects in a Crystal; 2.4 Lithium Iodide Battery; 2.5 Equilibrium Population of Frenkel Defects in a Crystal; 2.6 Photographic Film; 2.7 Photochromic Glasses; 2.8 Equilibrium Population of Antisite Defects in a Crystal; 2.9 Intrinsic Defects: Trends and Further Considerations; 2.10 Computation of Defect Energies; 2.10.1 Defect Calculations 2.10.2 Point Defect Interactions 2.10.3 Atomistic Simulation; 2.10.4 The Shell Model; 2.10.5 Defect Formation Energy; 2.10.6 Quantum Mechanical Calculations; 2.11 Answers to Introductory Questions; Problems and Exercises; References; Further Reading; 3. Extended Defects; 3.1 Dislocations; 3.2 Edge Dislocations; 3.3 Screw Dislocations; 3.4 Mixed Dislocations; 3.5 Unit and Partial Dislocations; 3.6 Multiplication of Dislocations; 3.7 Interaction of Dislocations and Point Defects; 3.7.1 Dislocation Loops; 3.7.2 Dislocation Climb; 3.7.3 Decoration of Dislocations 3.8 Dislocations in Nonmetallic Crystals 3.9 Internal Boundaries; 3.10 Low-Angle Grain Boundaries; 3.11 Twin Boundaries; 3.12 Antiphase Boundaries; 3.13 Domains and Ferroic Materials; 3.13.1 Magnetic Structures; 3.13.2 Ferroelectric Structures; 3.13.3 Ferroic Structures; 3.14 External Surfaces and Grain Boundaries; 3.14.1 Optical Characteristics of Polycrystalline Solids; 3.14.2 Electronic Properties of Interfaces; 3.14.3 Varistors; 3.14.4 Positive Temperature Coefficient Thermistors; 3.15 Volume Defects and Precipitates; 3.16 Answers to Introductory Questions; Problems and Exercises Further Reading |
| Record Nr. | UNINA-9910830722503321 |
|
Tilley R. J. D
|
||
| Hoboken, N.J., : Wiley, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Physical chemistry of ionic materials [[electronic resource] ] : ions and electrons in solids / / Joachim Maier
| Physical chemistry of ionic materials [[electronic resource] ] : ions and electrons in solids / / Joachim Maier |
| Autore | Maier Joachim |
| Pubbl/distr/stampa | Chichester ; ; Hoboken, NJ, : Wiley, c2004 |
| Descrizione fisica | 1 online resource (539 p.) |
| Disciplina |
541.0421
541.3723 |
| Soggetto topico |
Solids - Electric properties
Solid state chemistry Solids - Defects |
| Soggetto genere / forma | Electronic books. |
| ISBN |
9786610274871
0-470-02022-9 1-280-27487-5 0-470-02021-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; 1 Introduction; 1.1 Motivation; 1.2 The defect concept: Point defects as the main actors; 2 Bonding aspects: From atoms to solid state; 2.1 Chemical bonding in simple molecules; 2.1.1 Ideal covalent bonding; 2.1.2 Polar covalent bonding; 2.1.3 The ionic bonding; 2.1.4 Metallic bonding; 2.1.5 Further intermediate forms of chemical bonding; 2.1.6 Two-body potential functions; 2.2 Many atoms in contact: The solid state as a giant molecule; 2.2.1 The band model; 2.2.2 Ionic crystals; 2.2.3 Molecular crystals; 2.2.4 Covalent crystals; 2.2.5 Metallic crystals
2.2.6 Mixed forms of bonding in solids 2.2.7 Crystal structure and solid state structure; 3 Phonons; 3.1 Einstein and Debye models; 3.2 Complications; 4 Equilibrium thermodynamics of the perfect solid; 4.1 Preliminary remarks; 4.2 The formalism of equilibrium thermodynamics; 4.3 Examples of equilibrium thermodynamics; 4.3.1 Solid-solid phase transition; 4.3.2 Melting and evaporation; 4.3.3 Solid-solid reaction; 4.3.4 Solid-gas reaction; 4.3.5 Phase equilibria and mixing reactions; 4.3.6 Spatial equilibria in inhomogeneous systems; 4.3.7 Thermodynamics of elastically deformed solids 4.3.8 The thermodynamic functions of state of the perfect solid 5 Equilibrium thermodynamics of the real solid; 5.1 Preliminary remarks; 5.2 Equilibrium thermodynamics of point defect formation; 5.3 Equilibrium thermodynamics of electronic defects; 5.4 Higher-dimensional defects; 5.4.1 Equilibrium concentration; 5.4.2 Dislocations: Structure and energetics; 5.4.3 Interfaces: Structure and energetics; 5.4.4 Interfacial thermodynamics and local mechanical equilibria; 5.5 Point defect reactions; 5.5.1 Simple internal defect equilibria; 5.5.2 External defect equilibria; 5.6 Doping effects 5.7 Interactions between defects 5.7.1 Associates; 5.7.2 Activity coefficients; 5.8 Boundary layers and size effects; 5.8.1 General; 5.8.2 Concentration profiles in the space charge zones; 5.8.3 Conductivity effects; 5.8.4 Defect thermodynamics of the interface; 5.8.5 Examples and supplementary comments; 6 Kinetics and irreversible thermodynamics; 6.1 Transport and reaction; 6.1.1 Transport and reaction in the light of irreversible thermodynamics; 6.1.2 Transport and reaction in the light of chemical kinetics; 6.2 Electrical mobility; 6.2.1 Ion mobility; 6.2.2 Electron mobility 6.3 Phenomenological diffusion coefficients 6.3.1 Ion conduction and self-diffusion; 6.3.2 Tracer diffusion; 6.3.3 Chemical diffusion; 6.3.4 A comparison of the phenomenological diffusion coefficients; 6.4 Concentration profiles; 6.5 Diffusion kinetics of stoichiometry change; 6.6 Complications of matter transport; 6.6.1 Internal interactions; 6.6.2 Boundary layers and grain boundaries; 6.7 Surface reactions; 6.7.1 Elementary processes; 6.7.2 Coupled reactions; 6.7.3 Phenomenological rate constants; 6.7.4 Reactivity, chemical resistance and chemical capacitance; 6.8 Catalysis 6.9 Solid state reactions |
| Record Nr. | UNINA-9910143558503321 |
|
Maier Joachim
|
||
| Chichester ; ; Hoboken, NJ, : Wiley, c2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Physical chemistry of ionic materials [[electronic resource] ] : ions and electrons in solids / / Joachim Maier
| Physical chemistry of ionic materials [[electronic resource] ] : ions and electrons in solids / / Joachim Maier |
| Autore | Maier Joachim |
| Pubbl/distr/stampa | Chichester ; ; Hoboken, NJ, : Wiley, c2004 |
| Descrizione fisica | 1 online resource (539 p.) |
| Disciplina |
541.0421
541.3723 |
| Soggetto topico |
Solids - Electric properties
Solid state chemistry Solids - Defects |
| ISBN |
9786610274871
0-470-02022-9 1-280-27487-5 0-470-02021-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; 1 Introduction; 1.1 Motivation; 1.2 The defect concept: Point defects as the main actors; 2 Bonding aspects: From atoms to solid state; 2.1 Chemical bonding in simple molecules; 2.1.1 Ideal covalent bonding; 2.1.2 Polar covalent bonding; 2.1.3 The ionic bonding; 2.1.4 Metallic bonding; 2.1.5 Further intermediate forms of chemical bonding; 2.1.6 Two-body potential functions; 2.2 Many atoms in contact: The solid state as a giant molecule; 2.2.1 The band model; 2.2.2 Ionic crystals; 2.2.3 Molecular crystals; 2.2.4 Covalent crystals; 2.2.5 Metallic crystals
2.2.6 Mixed forms of bonding in solids 2.2.7 Crystal structure and solid state structure; 3 Phonons; 3.1 Einstein and Debye models; 3.2 Complications; 4 Equilibrium thermodynamics of the perfect solid; 4.1 Preliminary remarks; 4.2 The formalism of equilibrium thermodynamics; 4.3 Examples of equilibrium thermodynamics; 4.3.1 Solid-solid phase transition; 4.3.2 Melting and evaporation; 4.3.3 Solid-solid reaction; 4.3.4 Solid-gas reaction; 4.3.5 Phase equilibria and mixing reactions; 4.3.6 Spatial equilibria in inhomogeneous systems; 4.3.7 Thermodynamics of elastically deformed solids 4.3.8 The thermodynamic functions of state of the perfect solid 5 Equilibrium thermodynamics of the real solid; 5.1 Preliminary remarks; 5.2 Equilibrium thermodynamics of point defect formation; 5.3 Equilibrium thermodynamics of electronic defects; 5.4 Higher-dimensional defects; 5.4.1 Equilibrium concentration; 5.4.2 Dislocations: Structure and energetics; 5.4.3 Interfaces: Structure and energetics; 5.4.4 Interfacial thermodynamics and local mechanical equilibria; 5.5 Point defect reactions; 5.5.1 Simple internal defect equilibria; 5.5.2 External defect equilibria; 5.6 Doping effects 5.7 Interactions between defects 5.7.1 Associates; 5.7.2 Activity coefficients; 5.8 Boundary layers and size effects; 5.8.1 General; 5.8.2 Concentration profiles in the space charge zones; 5.8.3 Conductivity effects; 5.8.4 Defect thermodynamics of the interface; 5.8.5 Examples and supplementary comments; 6 Kinetics and irreversible thermodynamics; 6.1 Transport and reaction; 6.1.1 Transport and reaction in the light of irreversible thermodynamics; 6.1.2 Transport and reaction in the light of chemical kinetics; 6.2 Electrical mobility; 6.2.1 Ion mobility; 6.2.2 Electron mobility 6.3 Phenomenological diffusion coefficients 6.3.1 Ion conduction and self-diffusion; 6.3.2 Tracer diffusion; 6.3.3 Chemical diffusion; 6.3.4 A comparison of the phenomenological diffusion coefficients; 6.4 Concentration profiles; 6.5 Diffusion kinetics of stoichiometry change; 6.6 Complications of matter transport; 6.6.1 Internal interactions; 6.6.2 Boundary layers and grain boundaries; 6.7 Surface reactions; 6.7.1 Elementary processes; 6.7.2 Coupled reactions; 6.7.3 Phenomenological rate constants; 6.7.4 Reactivity, chemical resistance and chemical capacitance; 6.8 Catalysis 6.9 Solid state reactions |
| Record Nr. | UNINA-9910677945303321 |
|
Maier Joachim
|
||
| Chichester ; ; Hoboken, NJ, : Wiley, c2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Quantum mechanics with applications to nanotechnology and information science / / Yehuda B. Band and Yshai Avishai
| Quantum mechanics with applications to nanotechnology and information science / / Yehuda B. Band and Yshai Avishai |
| Autore | Band Yehuda B |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Oxford, : Academic Press, 2013 |
| Descrizione fisica | 1 online resource (xx, 971 pages) : illustrations (some color) |
| Disciplina | 530.12 |
| Collana | Gale eBooks |
| Soggetto topico |
Quantum theory
Nanotechnology Information science Solids - Electric properties Scattering (Mathematics) |
| ISBN |
1-283-89178-6
0-444-53787-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Quantum Mechanics: with Applications to Nanotechnology and Information Science; Copyright; Table of Contents; Preface; Acknowledgments; 1 Introduction to Quantum Mechanics; 1.1 What is Quantum Mechanics?; 1.1.1 A Brief Early History of Quantum Mechanics; 1.1.2 Energy Quantization; 1.1.3 Waves, Light, and Blackbody Radiation; 1.1.4 Wave-Particle Duality; 1.1.5 Angular Momentum Quantization; 1.1.6 Tunneling; 1.1.7 Photoelectric Effect; 1.2 Nanotechnology and Information Technology; 1.2.1 STM and AFM Microscopies; 1.2.2 Molecular Electronics
1.2.3 Quantum Dots, Wires and Wells, and Nanotubes1.2.4 Bio-Nanotechnology; 1.2.5 Information Technology; 1.3 A First Taste of Quantum Mechanics; 1.3.1 Quantum States and Probability Distributions; 1.3.2 Observable Operators; 1.3.3 Quantum Entanglement; 1.3.4 The Postulates of Quantum Mechanics; Postulates; Wave function form of the postulates; 1.3.5 Time-Dependent and -Independent Schrödinger Equations; 1.3.6 Momentum, Energy, and Angular Momentum; Generators of Galilean Transformations; Plane Waves; Generators of Galilean Transformations Continued; 1.3.7 Dirac Delta Functions 1.3.8 Position and Momentum States, |x> and |p>1.3.9 Ehrenfest's Theorem; 1.3.10 One-Dimensional Wave Equations; 1.3.11 Particle-in-a-Box and Piecewise-Constant Potentials; Bound States in a Potential Well; 2D and 3D Wells; Tunneling Through a Double Barrier: Resonances; Metal-Vacuum and Semiconductor-Vacuum Interfaces; 1.3.12 The Delta Function Potential; 1.3.13 Wave Packets; 1.3.14 The Linear Potential and Quantum Tunneling; 1.3.15 The Harmonic Oscillator; 2 The Formalism of Quantum Mechanics; 2.1 Hilbert Space and Dirac Notation; 2.1.1 Position and Momentum Representations 2.1.2 Basis-State Expansions 2.2 Hermitian and Anti-Hermitian Operators; 2.2.1 Compatible Operators and Degeneracy; 2.3 The Uncertainty Principle; 2.4 The Measurement Problem; 2.5 Mixed States: Density Matrix Formulation; 2.5.1 Many-Particle Systems: Correlation Functions; 2.5.2 Purity and von Neumann Entropy; 2.5.3 Distance Between States; 2.5.4 The Measurement Problem Revisited; 2.6 The Wigner Representation; 2.7 Schrödinger and Heisenberg Representations; 2.7.1 Interaction Representation; 2.7.2 Harmonic Oscillator Raising-Lowering Operators; 2.7.3 Coherent States and Squeezed States Squeezed States and the Uncertainty Principle 2.8 The Correspondence Principle and the Classical Limit; 2.9 Symmetry and Conservation Laws in Quantum Mechanics; 2.9.1 Exchange Symmetry; 2.9.2 Inversion Symmetry; 2.9.3 Time-Reversal Symmetry; 2.9.4 Additional Generators of Galilean Transformations; 3 Angular Momentum and Spherical Symmetry; 3.1 Angular Momentum in Quantum Mechanics; 3.1.1 Angular Momentum Raising and Lowering Operators; 3.1.2 Electron Spin: j = 1/2; 3.1.3 Angular Momentum in Spherical Coordinates; 3.1.4 Spherical Harmonics; 3.2 Spherically Symmetric Systems 3.2.1 Angular Momentum Decomposition of Plane Waves |
| Record Nr. | UNINA-9910826355103321 |
|
Band Yehuda B
|
||
| Oxford, : Academic Press, 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
