Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Band theory and electronic properties of solids / / John Singleton
| Band theory and electronic properties of solids / / John Singleton |
| Autore | Singleton John <1960 December 11-> |
| Pubbl/distr/stampa | Oxford : , : Oxford University Press, , 2012 |
| Descrizione fisica | 1 online resource (xvi, 222 pages) : illustrations |
| Disciplina | 530.412 |
| Soggetto topico |
Energy-band theory of solids
Solids - Electric properties |
| Soggetto genere / forma | Electronic books. |
| ISBN | 0-19-105746-0 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910467697703321 |
Singleton John <1960 December 11->
|
||
| Oxford : , : Oxford University Press, , 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Band theory and electronic properties of solids / / John Singleton
| Band theory and electronic properties of solids / / John Singleton |
| Autore | Singleton John <1960 December 11-> |
| Pubbl/distr/stampa | Oxford : , : Oxford University Press, , 2012 |
| Descrizione fisica | 1 online resource (xvi, 222 pages) : illustrations |
| Disciplina | 530.412 |
| Soggetto topico |
Energy-band theory of solids
Solids - Electric properties |
| ISBN | 0-19-105746-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910793710203321 |
|
Singleton John <1960 December 11->
|
||
| Oxford : , : Oxford University Press, , 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Band theory and electronic properties of solids / / John Singleton
| Band theory and electronic properties of solids / / John Singleton |
| Autore | Singleton John <1960 December 11-> |
| Pubbl/distr/stampa | Oxford : , : Oxford University Press, , 2012 |
| Descrizione fisica | 1 online resource (xvi, 222 pages) : illustrations |
| Disciplina | 530.412 |
| Soggetto topico |
Energy-band theory of solids
Solids - Electric properties |
| ISBN | 0-19-105746-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910818833503321 |
|
Singleton John <1960 December 11->
|
||
| Oxford : , : Oxford University Press, , 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Charge transport in disordered solids with applications in electronics [[electronic resource] /] / edited by Sergei Baranovski
| Charge transport in disordered solids with applications in electronics [[electronic resource] /] / edited by Sergei Baranovski |
| Pubbl/distr/stampa | Hoboken, NJ, : Wiley, c2006 |
| Descrizione fisica | 1 online resource (499 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | BaranovskiSergei |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Amorphous semiconductors - Electric properties
Solids - Electric properties Semiconductors - Materials |
| ISBN |
1-280-64946-1
9786610649464 0-470-09506-7 0-470-09505-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Contents; Series Preface; Preface; 1: Charge Transport via Delocalized States in Disordered Materials; 1.1 INTRODUCTION; 1.2 TRANSPORT BY ELECTRONS IN EXTENDED STATES FAR FROM THE MOBILITY EDGES; 1.2.1 Weak-scattering theories; 1.2.2 Weak localization; 1.2.3 Interaction effects; 1.3 SCALING THEORY OF LOCALIZATION; 1.3.1 Main ideas of the scaling theory of localization; 1.3.2 The main equations of one-parameter scaling; 1.3.3 Model solutions; 1.3.4 Some predictions of the scaling theory; 1.3.5 Minimum metallic conductivity; 1.4 EXTENDED-STATE CONDUCTION IN THREE DIMENSIONS
1.4.1 Activated conduction1.4.2 Extended-state conduction near the metal-insulator transition; 1.5 APPARENT MOBILITY EDGE AND EXTENDED-STATE CONDUCTION IN TWO-DIMENSIONAL SYSTEMS; 1.5.1 Experimental studies of the mobility edge in low-mobility two-dimensional systems; 1.5.2 Evidence for a true metal-insulator transition in high-mobility two-dimensional systems; 1.5.3 Evidence against a true metal-insulator transition in two-dimensional systems; 1.5.4 Temperature-dependent charge carrier scattering; 1.6 CONCLUSIONS; REFERENCES; 2: Description of Charge Transport in Amorphous Semiconductors 2.1 INTRODUCTION2.2 GENERAL REMARKS ON CHARGE TRANSPORT IN DISORDERED MATERIALS; 2.3 HOPPING CHARGE TRANSPORT IN DISORDERED MATERIALS VIA LOCALIZED STATES; 2.3.1 Nearest-neighbor hopping; 2.3.2 Variable-range hopping; 2.4 DESCRIPTION OF CHARGE-CARRIER ENERGY RELAXATION AND HOPPING CONDUCTION IN INORGANIC NONCRYSTALLINE MATERIALS; 2.4.1 Dispersive transport in disordered materials; 2.4.2 The concept of the transport energy; 2.5 EINSTEIN'S RELATIONSHIP FOR HOPPING ELECTRONS; 2.5.1 Nonequilibrium charge carriers; 2.5.2 Equilibrium charge carriers; 2.6 STEADY-STATE PHOTOCONDUCTIVITY 2.6.1 Low-temperature photoconductivity2.6.2 Temperature dependence of the photoconductivity; 2.7 THERMALLY STIMULATED CURRENTS-A TOOL TO DETERMINE DOS?; 2.8 DARK CONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS; 2.9 NONLINEAR FIELD EFFECTS; 2.10 CONCLUDING REMARKS; REFERENCES; 3: Hydrogenated Amorphous Silicon-Material Properties and Device Applications; 3.1 INTRODUCTION; 3.2 PREPARATION AND STRUCTURAL PROPERTIES OF AMORPHOUS SILICON; 3.3 DENSITY OF STATES DISTRIBUTION IN THE ENERGY GAP; 3.3.1 Model of the density of states distribution; 3.3.2 Band-tail states; 3.3.3 Deep defect states 3.4 OPTICAL PROPERTIES3.5 TRANSPORT PROPERTIES; 3.6 RECOMBINATION OF EXCESS CARRIERS; 3.6.1 Low-temperature regime (T 60 K); 3.7 DEVICE APPLICATIONS; 3.7.1 Schottky barrier diodes; 3.7.2 p-i-n diodes; 3.7.3 Thin-film transistors; 3.8 THIN-FILM SOLAR CELLS; REFERENCES; 4: Applications of Disordered Semiconductors in Modern Electronics: Selected Examples; 4.1 PERSPECTIVES ON AMORPHOUS SEMICONDUCTORS; 4.2 DIRECT CONVERSION DIGITAL X-RAY IMAGE DETECTORS; 4.3 X-RAY PHOTOCONDUCTORS; 4.4 STABILIZED AMORPHOUS SELENIUM (a-Se) 4.5 AVALANCHE MULTIPLICATION AND ULTRA-HIGH-SENSITIVE HARP VIDEO TUBE |
| Record Nr. | UNINA-9910143716103321 |
| Hoboken, NJ, : Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Charge transport in disordered solids with applications in electronics [[electronic resource] /] / edited by Sergei Baranovski
| Charge transport in disordered solids with applications in electronics [[electronic resource] /] / edited by Sergei Baranovski |
| Pubbl/distr/stampa | Hoboken, NJ, : Wiley, c2006 |
| Descrizione fisica | 1 online resource (499 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | BaranovskiSergei |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Amorphous semiconductors - Electric properties
Solids - Electric properties Semiconductors - Materials |
| ISBN |
1-280-64946-1
9786610649464 0-470-09506-7 0-470-09505-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Contents; Series Preface; Preface; 1: Charge Transport via Delocalized States in Disordered Materials; 1.1 INTRODUCTION; 1.2 TRANSPORT BY ELECTRONS IN EXTENDED STATES FAR FROM THE MOBILITY EDGES; 1.2.1 Weak-scattering theories; 1.2.2 Weak localization; 1.2.3 Interaction effects; 1.3 SCALING THEORY OF LOCALIZATION; 1.3.1 Main ideas of the scaling theory of localization; 1.3.2 The main equations of one-parameter scaling; 1.3.3 Model solutions; 1.3.4 Some predictions of the scaling theory; 1.3.5 Minimum metallic conductivity; 1.4 EXTENDED-STATE CONDUCTION IN THREE DIMENSIONS
1.4.1 Activated conduction1.4.2 Extended-state conduction near the metal-insulator transition; 1.5 APPARENT MOBILITY EDGE AND EXTENDED-STATE CONDUCTION IN TWO-DIMENSIONAL SYSTEMS; 1.5.1 Experimental studies of the mobility edge in low-mobility two-dimensional systems; 1.5.2 Evidence for a true metal-insulator transition in high-mobility two-dimensional systems; 1.5.3 Evidence against a true metal-insulator transition in two-dimensional systems; 1.5.4 Temperature-dependent charge carrier scattering; 1.6 CONCLUSIONS; REFERENCES; 2: Description of Charge Transport in Amorphous Semiconductors 2.1 INTRODUCTION2.2 GENERAL REMARKS ON CHARGE TRANSPORT IN DISORDERED MATERIALS; 2.3 HOPPING CHARGE TRANSPORT IN DISORDERED MATERIALS VIA LOCALIZED STATES; 2.3.1 Nearest-neighbor hopping; 2.3.2 Variable-range hopping; 2.4 DESCRIPTION OF CHARGE-CARRIER ENERGY RELAXATION AND HOPPING CONDUCTION IN INORGANIC NONCRYSTALLINE MATERIALS; 2.4.1 Dispersive transport in disordered materials; 2.4.2 The concept of the transport energy; 2.5 EINSTEIN'S RELATIONSHIP FOR HOPPING ELECTRONS; 2.5.1 Nonequilibrium charge carriers; 2.5.2 Equilibrium charge carriers; 2.6 STEADY-STATE PHOTOCONDUCTIVITY 2.6.1 Low-temperature photoconductivity2.6.2 Temperature dependence of the photoconductivity; 2.7 THERMALLY STIMULATED CURRENTS-A TOOL TO DETERMINE DOS?; 2.8 DARK CONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS; 2.9 NONLINEAR FIELD EFFECTS; 2.10 CONCLUDING REMARKS; REFERENCES; 3: Hydrogenated Amorphous Silicon-Material Properties and Device Applications; 3.1 INTRODUCTION; 3.2 PREPARATION AND STRUCTURAL PROPERTIES OF AMORPHOUS SILICON; 3.3 DENSITY OF STATES DISTRIBUTION IN THE ENERGY GAP; 3.3.1 Model of the density of states distribution; 3.3.2 Band-tail states; 3.3.3 Deep defect states 3.4 OPTICAL PROPERTIES3.5 TRANSPORT PROPERTIES; 3.6 RECOMBINATION OF EXCESS CARRIERS; 3.6.1 Low-temperature regime (T 60 K); 3.7 DEVICE APPLICATIONS; 3.7.1 Schottky barrier diodes; 3.7.2 p-i-n diodes; 3.7.3 Thin-film transistors; 3.8 THIN-FILM SOLAR CELLS; REFERENCES; 4: Applications of Disordered Semiconductors in Modern Electronics: Selected Examples; 4.1 PERSPECTIVES ON AMORPHOUS SEMICONDUCTORS; 4.2 DIRECT CONVERSION DIGITAL X-RAY IMAGE DETECTORS; 4.3 X-RAY PHOTOCONDUCTORS; 4.4 STABILIZED AMORPHOUS SELENIUM (a-Se) 4.5 AVALANCHE MULTIPLICATION AND ULTRA-HIGH-SENSITIVE HARP VIDEO TUBE |
| Record Nr. | UNINA-9910830902203321 |
| Hoboken, NJ, : Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Charge transport in disordered solids with applications in electronics / / edited by Sergei Baranovski
| Charge transport in disordered solids with applications in electronics / / edited by Sergei Baranovski |
| Pubbl/distr/stampa | Hoboken, NJ, : Wiley, c2006 |
| Descrizione fisica | 1 online resource (499 p.) |
| Disciplina | 621.3815/2 |
| Altri autori (Persone) | BaranovskiSergei |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Amorphous semiconductors - Electric properties
Solids - Electric properties Semiconductors - Materials |
| ISBN |
9786610649464
9781280649462 1280649461 9780470095065 0470095067 9780470095058 0470095059 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Contents; Series Preface; Preface; 1: Charge Transport via Delocalized States in Disordered Materials; 1.1 INTRODUCTION; 1.2 TRANSPORT BY ELECTRONS IN EXTENDED STATES FAR FROM THE MOBILITY EDGES; 1.2.1 Weak-scattering theories; 1.2.2 Weak localization; 1.2.3 Interaction effects; 1.3 SCALING THEORY OF LOCALIZATION; 1.3.1 Main ideas of the scaling theory of localization; 1.3.2 The main equations of one-parameter scaling; 1.3.3 Model solutions; 1.3.4 Some predictions of the scaling theory; 1.3.5 Minimum metallic conductivity; 1.4 EXTENDED-STATE CONDUCTION IN THREE DIMENSIONS
1.4.1 Activated conduction1.4.2 Extended-state conduction near the metal-insulator transition; 1.5 APPARENT MOBILITY EDGE AND EXTENDED-STATE CONDUCTION IN TWO-DIMENSIONAL SYSTEMS; 1.5.1 Experimental studies of the mobility edge in low-mobility two-dimensional systems; 1.5.2 Evidence for a true metal-insulator transition in high-mobility two-dimensional systems; 1.5.3 Evidence against a true metal-insulator transition in two-dimensional systems; 1.5.4 Temperature-dependent charge carrier scattering; 1.6 CONCLUSIONS; REFERENCES; 2: Description of Charge Transport in Amorphous Semiconductors 2.1 INTRODUCTION2.2 GENERAL REMARKS ON CHARGE TRANSPORT IN DISORDERED MATERIALS; 2.3 HOPPING CHARGE TRANSPORT IN DISORDERED MATERIALS VIA LOCALIZED STATES; 2.3.1 Nearest-neighbor hopping; 2.3.2 Variable-range hopping; 2.4 DESCRIPTION OF CHARGE-CARRIER ENERGY RELAXATION AND HOPPING CONDUCTION IN INORGANIC NONCRYSTALLINE MATERIALS; 2.4.1 Dispersive transport in disordered materials; 2.4.2 The concept of the transport energy; 2.5 EINSTEIN'S RELATIONSHIP FOR HOPPING ELECTRONS; 2.5.1 Nonequilibrium charge carriers; 2.5.2 Equilibrium charge carriers; 2.6 STEADY-STATE PHOTOCONDUCTIVITY 2.6.1 Low-temperature photoconductivity2.6.2 Temperature dependence of the photoconductivity; 2.7 THERMALLY STIMULATED CURRENTS-A TOOL TO DETERMINE DOS?; 2.8 DARK CONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS; 2.9 NONLINEAR FIELD EFFECTS; 2.10 CONCLUDING REMARKS; REFERENCES; 3: Hydrogenated Amorphous Silicon-Material Properties and Device Applications; 3.1 INTRODUCTION; 3.2 PREPARATION AND STRUCTURAL PROPERTIES OF AMORPHOUS SILICON; 3.3 DENSITY OF STATES DISTRIBUTION IN THE ENERGY GAP; 3.3.1 Model of the density of states distribution; 3.3.2 Band-tail states; 3.3.3 Deep defect states 3.4 OPTICAL PROPERTIES3.5 TRANSPORT PROPERTIES; 3.6 RECOMBINATION OF EXCESS CARRIERS; 3.6.1 Low-temperature regime (T 60 K); 3.7 DEVICE APPLICATIONS; 3.7.1 Schottky barrier diodes; 3.7.2 p-i-n diodes; 3.7.3 Thin-film transistors; 3.8 THIN-FILM SOLAR CELLS; REFERENCES; 4: Applications of Disordered Semiconductors in Modern Electronics: Selected Examples; 4.1 PERSPECTIVES ON AMORPHOUS SEMICONDUCTORS; 4.2 DIRECT CONVERSION DIGITAL X-RAY IMAGE DETECTORS; 4.3 X-RAY PHOTOCONDUCTORS; 4.4 STABILIZED AMORPHOUS SELENIUM (a-Se) 4.5 AVALANCHE MULTIPLICATION AND ULTRA-HIGH-SENSITIVE HARP VIDEO TUBE |
| Record Nr. | UNINA-9911020362203321 |
| Hoboken, NJ, : Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Defects in solids [[electronic resource] /] / Richard J.D. Tilley
| Defects in solids [[electronic resource] /] / Richard J.D. Tilley |
| Autore | Tilley R. J. D |
| Pubbl/distr/stampa | Hoboken, N.J., : Wiley, c2008 |
| Descrizione fisica | 1 online resource (549 p.) |
| Disciplina |
620.1/1
620.11 |
| Collana | Special Topics in Inorganic Chemistry |
| Soggetto topico |
Solids - Defects
Solids - Electric properties Solids - Magnetic properties Solids - Optical properties |
| ISBN |
1-283-20329-4
9786613203298 0-470-38075-6 0-470-38073-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
DEFECTS IN SOLIDS; CONTENTS; Preface; 1. Point Defects; 1.1 Introduction; 1.2 Point and Electronic Defects in Crystalline Solids; 1.3 Electronic Properties: Doped Silicon and Germanium as Examples; 1.4 Optical Properties: F Centers and Ruby as Examples; 1.5 Bulk Properties; 1.5.1 Unit Cell Dimensions; 1.5.2 Density; 1.5.3 Volume; 1.5.4 Young's Modulus (the Elastic Modulus); 1.6 Thermoelectric Properties: The Seebeck Coefficient as an Example; 1.7 Point Defect Notation; 1.8 Charges on Defects; 1.8.1 Electrons and Electron Holes; 1.8.2 Atomic and Ionic Defects
1.9 Balanced Populations of Point Defects: Schottky and Frenkel Defects 1.9.1 Schottky Defects; 1.9.2 Frenkel Defects; 1.10 Antisite Defects; 1.11 Defect Formation and Reaction Equations; 1.11.1 Addition and Subtraction of Atoms; 1.11.2 Equation Formalism; 1.11.3 Formation of Antisite Defects; 1.11.4 Nickel Oxide; 1.11.5 Cadmium Oxide; 1.11.6 Calcia-stabilized Zirconia; 1.11.7 Ternary Oxides; 1.12 Combinations of Point Defects in Pure Materials; 1.13 Structural Consequences of Point Defect Populations; 1.14 Answers to Introductory Questions; Problems and Exercises; References; Further Reading 2. Intrinsic Point Defects in Stoichiometric Compounds 2.1 Equilibrium Population of Vacancies in a Monatomic Crystal; 2.2 Equilibrium Population of Self-Interstitials in a Monatomic Crystal; 2.3 Equilibrium Population of Schottky Defects in a Crystal; 2.4 Lithium Iodide Battery; 2.5 Equilibrium Population of Frenkel Defects in a Crystal; 2.6 Photographic Film; 2.7 Photochromic Glasses; 2.8 Equilibrium Population of Antisite Defects in a Crystal; 2.9 Intrinsic Defects: Trends and Further Considerations; 2.10 Computation of Defect Energies; 2.10.1 Defect Calculations 2.10.2 Point Defect Interactions 2.10.3 Atomistic Simulation; 2.10.4 The Shell Model; 2.10.5 Defect Formation Energy; 2.10.6 Quantum Mechanical Calculations; 2.11 Answers to Introductory Questions; Problems and Exercises; References; Further Reading; 3. Extended Defects; 3.1 Dislocations; 3.2 Edge Dislocations; 3.3 Screw Dislocations; 3.4 Mixed Dislocations; 3.5 Unit and Partial Dislocations; 3.6 Multiplication of Dislocations; 3.7 Interaction of Dislocations and Point Defects; 3.7.1 Dislocation Loops; 3.7.2 Dislocation Climb; 3.7.3 Decoration of Dislocations 3.8 Dislocations in Nonmetallic Crystals 3.9 Internal Boundaries; 3.10 Low-Angle Grain Boundaries; 3.11 Twin Boundaries; 3.12 Antiphase Boundaries; 3.13 Domains and Ferroic Materials; 3.13.1 Magnetic Structures; 3.13.2 Ferroelectric Structures; 3.13.3 Ferroic Structures; 3.14 External Surfaces and Grain Boundaries; 3.14.1 Optical Characteristics of Polycrystalline Solids; 3.14.2 Electronic Properties of Interfaces; 3.14.3 Varistors; 3.14.4 Positive Temperature Coefficient Thermistors; 3.15 Volume Defects and Precipitates; 3.16 Answers to Introductory Questions; Problems and Exercises Further Reading |
| Record Nr. | UNINA-9910144103303321 |
|
Tilley R. J. D
|
||
| Hoboken, N.J., : Wiley, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Defects in solids [[electronic resource] /] / Richard J.D. Tilley
| Defects in solids [[electronic resource] /] / Richard J.D. Tilley |
| Autore | Tilley R. J. D |
| Pubbl/distr/stampa | Hoboken, N.J., : Wiley, c2008 |
| Descrizione fisica | 1 online resource (549 p.) |
| Disciplina |
620.1/1
620.11 |
| Collana | Special Topics in Inorganic Chemistry |
| Soggetto topico |
Solids - Defects
Solids - Electric properties Solids - Magnetic properties Solids - Optical properties |
| ISBN |
1-283-20329-4
9786613203298 0-470-38075-6 0-470-38073-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
DEFECTS IN SOLIDS; CONTENTS; Preface; 1. Point Defects; 1.1 Introduction; 1.2 Point and Electronic Defects in Crystalline Solids; 1.3 Electronic Properties: Doped Silicon and Germanium as Examples; 1.4 Optical Properties: F Centers and Ruby as Examples; 1.5 Bulk Properties; 1.5.1 Unit Cell Dimensions; 1.5.2 Density; 1.5.3 Volume; 1.5.4 Young's Modulus (the Elastic Modulus); 1.6 Thermoelectric Properties: The Seebeck Coefficient as an Example; 1.7 Point Defect Notation; 1.8 Charges on Defects; 1.8.1 Electrons and Electron Holes; 1.8.2 Atomic and Ionic Defects
1.9 Balanced Populations of Point Defects: Schottky and Frenkel Defects 1.9.1 Schottky Defects; 1.9.2 Frenkel Defects; 1.10 Antisite Defects; 1.11 Defect Formation and Reaction Equations; 1.11.1 Addition and Subtraction of Atoms; 1.11.2 Equation Formalism; 1.11.3 Formation of Antisite Defects; 1.11.4 Nickel Oxide; 1.11.5 Cadmium Oxide; 1.11.6 Calcia-stabilized Zirconia; 1.11.7 Ternary Oxides; 1.12 Combinations of Point Defects in Pure Materials; 1.13 Structural Consequences of Point Defect Populations; 1.14 Answers to Introductory Questions; Problems and Exercises; References; Further Reading 2. Intrinsic Point Defects in Stoichiometric Compounds 2.1 Equilibrium Population of Vacancies in a Monatomic Crystal; 2.2 Equilibrium Population of Self-Interstitials in a Monatomic Crystal; 2.3 Equilibrium Population of Schottky Defects in a Crystal; 2.4 Lithium Iodide Battery; 2.5 Equilibrium Population of Frenkel Defects in a Crystal; 2.6 Photographic Film; 2.7 Photochromic Glasses; 2.8 Equilibrium Population of Antisite Defects in a Crystal; 2.9 Intrinsic Defects: Trends and Further Considerations; 2.10 Computation of Defect Energies; 2.10.1 Defect Calculations 2.10.2 Point Defect Interactions 2.10.3 Atomistic Simulation; 2.10.4 The Shell Model; 2.10.5 Defect Formation Energy; 2.10.6 Quantum Mechanical Calculations; 2.11 Answers to Introductory Questions; Problems and Exercises; References; Further Reading; 3. Extended Defects; 3.1 Dislocations; 3.2 Edge Dislocations; 3.3 Screw Dislocations; 3.4 Mixed Dislocations; 3.5 Unit and Partial Dislocations; 3.6 Multiplication of Dislocations; 3.7 Interaction of Dislocations and Point Defects; 3.7.1 Dislocation Loops; 3.7.2 Dislocation Climb; 3.7.3 Decoration of Dislocations 3.8 Dislocations in Nonmetallic Crystals 3.9 Internal Boundaries; 3.10 Low-Angle Grain Boundaries; 3.11 Twin Boundaries; 3.12 Antiphase Boundaries; 3.13 Domains and Ferroic Materials; 3.13.1 Magnetic Structures; 3.13.2 Ferroelectric Structures; 3.13.3 Ferroic Structures; 3.14 External Surfaces and Grain Boundaries; 3.14.1 Optical Characteristics of Polycrystalline Solids; 3.14.2 Electronic Properties of Interfaces; 3.14.3 Varistors; 3.14.4 Positive Temperature Coefficient Thermistors; 3.15 Volume Defects and Precipitates; 3.16 Answers to Introductory Questions; Problems and Exercises Further Reading |
| Record Nr. | UNINA-9910830722503321 |
|
Tilley R. J. D
|
||
| Hoboken, N.J., : Wiley, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Defects in solids / / Richard J.D. Tilley
| Defects in solids / / Richard J.D. Tilley |
| Autore | Tilley R. J. D |
| Pubbl/distr/stampa | Hoboken, N.J., : Wiley, c2008 |
| Descrizione fisica | 1 online resource (549 p.) |
| Disciplina |
620.1/1
620.11 |
| Collana | Special Topics in Inorganic Chemistry |
| Soggetto topico |
Solids - Defects
Solids - Electric properties Solids - Magnetic properties Solids - Optical properties |
| ISBN |
9786613203298
9781283203296 1283203294 9780470380758 0470380756 9780470380734 047038073X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
DEFECTS IN SOLIDS; CONTENTS; Preface; 1. Point Defects; 1.1 Introduction; 1.2 Point and Electronic Defects in Crystalline Solids; 1.3 Electronic Properties: Doped Silicon and Germanium as Examples; 1.4 Optical Properties: F Centers and Ruby as Examples; 1.5 Bulk Properties; 1.5.1 Unit Cell Dimensions; 1.5.2 Density; 1.5.3 Volume; 1.5.4 Young's Modulus (the Elastic Modulus); 1.6 Thermoelectric Properties: The Seebeck Coefficient as an Example; 1.7 Point Defect Notation; 1.8 Charges on Defects; 1.8.1 Electrons and Electron Holes; 1.8.2 Atomic and Ionic Defects
1.9 Balanced Populations of Point Defects: Schottky and Frenkel Defects 1.9.1 Schottky Defects; 1.9.2 Frenkel Defects; 1.10 Antisite Defects; 1.11 Defect Formation and Reaction Equations; 1.11.1 Addition and Subtraction of Atoms; 1.11.2 Equation Formalism; 1.11.3 Formation of Antisite Defects; 1.11.4 Nickel Oxide; 1.11.5 Cadmium Oxide; 1.11.6 Calcia-stabilized Zirconia; 1.11.7 Ternary Oxides; 1.12 Combinations of Point Defects in Pure Materials; 1.13 Structural Consequences of Point Defect Populations; 1.14 Answers to Introductory Questions; Problems and Exercises; References; Further Reading 2. Intrinsic Point Defects in Stoichiometric Compounds 2.1 Equilibrium Population of Vacancies in a Monatomic Crystal; 2.2 Equilibrium Population of Self-Interstitials in a Monatomic Crystal; 2.3 Equilibrium Population of Schottky Defects in a Crystal; 2.4 Lithium Iodide Battery; 2.5 Equilibrium Population of Frenkel Defects in a Crystal; 2.6 Photographic Film; 2.7 Photochromic Glasses; 2.8 Equilibrium Population of Antisite Defects in a Crystal; 2.9 Intrinsic Defects: Trends and Further Considerations; 2.10 Computation of Defect Energies; 2.10.1 Defect Calculations 2.10.2 Point Defect Interactions 2.10.3 Atomistic Simulation; 2.10.4 The Shell Model; 2.10.5 Defect Formation Energy; 2.10.6 Quantum Mechanical Calculations; 2.11 Answers to Introductory Questions; Problems and Exercises; References; Further Reading; 3. Extended Defects; 3.1 Dislocations; 3.2 Edge Dislocations; 3.3 Screw Dislocations; 3.4 Mixed Dislocations; 3.5 Unit and Partial Dislocations; 3.6 Multiplication of Dislocations; 3.7 Interaction of Dislocations and Point Defects; 3.7.1 Dislocation Loops; 3.7.2 Dislocation Climb; 3.7.3 Decoration of Dislocations 3.8 Dislocations in Nonmetallic Crystals 3.9 Internal Boundaries; 3.10 Low-Angle Grain Boundaries; 3.11 Twin Boundaries; 3.12 Antiphase Boundaries; 3.13 Domains and Ferroic Materials; 3.13.1 Magnetic Structures; 3.13.2 Ferroelectric Structures; 3.13.3 Ferroic Structures; 3.14 External Surfaces and Grain Boundaries; 3.14.1 Optical Characteristics of Polycrystalline Solids; 3.14.2 Electronic Properties of Interfaces; 3.14.3 Varistors; 3.14.4 Positive Temperature Coefficient Thermistors; 3.15 Volume Defects and Precipitates; 3.16 Answers to Introductory Questions; Problems and Exercises Further Reading |
| Record Nr. | UNINA-9911020161603321 |
|
Tilley R. J. D
|
||
| Hoboken, N.J., : Wiley, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Electrical properties of materials
| Electrical properties of materials |
| Autore | Solymar L |
| Pubbl/distr/stampa | [Place of publication not identified], : Oxford University Press, 2010 |
| Soggetto topico |
Solids - Electric properties
Materials - Electric properties Energy-band theory of solids Free electron theory of metals Physics Physical Sciences & Mathematics Atomic Physics |
| ISBN | 1-61344-784-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9911006587503321 |
|
Solymar L
|
||
| [Place of publication not identified], : Oxford University Press, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
