Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
ANSI/IEEE Std C62.2-1987 : IEEE Guide for the Application of Gapped Silicon-Carbide Surge Arresters for Alternating Current Systems / / IEEE Power Engineering Society Surge Protective Devices Committee, IEEE Standards Board, American National Standards Institute
| ANSI/IEEE Std C62.2-1987 : IEEE Guide for the Application of Gapped Silicon-Carbide Surge Arresters for Alternating Current Systems / / IEEE Power Engineering Society Surge Protective Devices Committee, IEEE Standards Board, American National Standards Institute |
| Pubbl/distr/stampa | Piscataway : , : IEEE, , 1989 |
| Descrizione fisica | 1 online resource (56 pages) |
| Disciplina | 621.317 |
| Soggetto topico |
Electric apparatus and appliances - Protection
Transients (Electricity) - Standards Electric power system stability - Standards Silicon carbide - Electric properties Electric currents, Alternating |
| ISBN | 0-7381-3016-8 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | ANSI/IEEE Std C62.2-1987: IEEE Guide for the Application of Gapped Silicon-Carbide Surge Arresters for Alternating Current Systems |
| Record Nr. | UNINA-9910135767303321 |
| Piscataway : , : IEEE, , 1989 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
ANSI/IEEE Std C62.2-1987 : IEEE Guide for the Application of Gapped Silicon-Carbide Surge Arresters for Alternating Current Systems / / IEEE Power Engineering Society Surge Protective Devices Committee, IEEE Standards Board, American National Standards Institute
| ANSI/IEEE Std C62.2-1987 : IEEE Guide for the Application of Gapped Silicon-Carbide Surge Arresters for Alternating Current Systems / / IEEE Power Engineering Society Surge Protective Devices Committee, IEEE Standards Board, American National Standards Institute |
| Pubbl/distr/stampa | Piscataway : , : IEEE, , 1989 |
| Descrizione fisica | 1 online resource (56 pages) |
| Disciplina | 621.317 |
| Soggetto topico |
Electric apparatus and appliances - Protection
Transients (Electricity) - Standards Electric power system stability - Standards Silicon carbide - Electric properties Electric currents, Alternating |
| ISBN | 0-7381-3016-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | ANSI/IEEE Std C62.2-1987: IEEE Guide for the Application of Gapped Silicon-Carbide Surge Arresters for Alternating Current Systems |
| Record Nr. | UNISA-996279556903316 |
| Piscataway : , : IEEE, , 1989 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Evaluation of electrical resistivity characteristics of metalized 4H-SiC for application to electric guns [[electronic resource] /] / by Gary L. Katulka
| Evaluation of electrical resistivity characteristics of metalized 4H-SiC for application to electric guns [[electronic resource] /] / by Gary L. Katulka |
| Autore | Katulka Gary L |
| Pubbl/distr/stampa | [Aberdeen Proving Ground, MD] : , : Army Research Laboratory, , [1999] |
| Descrizione fisica | 1 online resource (viii, 20 pages) : illustrations |
| Collana | ARL-TR |
| Soggetto topico |
Silicon carbide - Electric properties
Stun guns Energy storage |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910697670403321 |
Katulka Gary L
|
||
| [Aberdeen Proving Ground, MD] : , : Army Research Laboratory, , [1999] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
GaAs high breakdown voltage front and back side processed Schottky detectors for x-ray detection [[electronic resource] /] / Fred Semendy ... [and others]
| GaAs high breakdown voltage front and back side processed Schottky detectors for x-ray detection [[electronic resource] /] / Fred Semendy ... [and others] |
| Pubbl/distr/stampa | Adelphi, MD : , : Army Research Laboratory, , [2007] |
| Descrizione fisica | iv, 13 pages : digital, PDF file |
| Altri autori (Persone) | SemendyFred |
| Collana | ARL-TR |
| Soggetto topico |
Semiconductors
Silicon carbide - Electric properties Gallium nitride - Electric properties |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910698194203321 |
| Adelphi, MD : , : Army Research Laboratory, , [2007] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Physics and Technology of Silicon Carbide Devices / / edited by Yasuto Hijikata
| Physics and Technology of Silicon Carbide Devices / / edited by Yasuto Hijikata |
| Pubbl/distr/stampa | Rijeka, Croatia : , : IntechOpen, , 2012 |
| Descrizione fisica | 1 online resource (414 pages) : illustrations |
| Disciplina | 621.3 |
| Soggetto topico | Silicon carbide - Electric properties |
| ISBN | 953-51-6283-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910317561803321 |
| Rijeka, Croatia : , : IntechOpen, , 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
SiC materials and devices [[electronic resource] /] / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein
| SiC materials and devices [[electronic resource] /] / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
| Pubbl/distr/stampa | New Jersey ; ; London, : World Scientific, 2007 |
| Descrizione fisica | 1 online resource (143 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
ShurMichael
RumyantsevSergey L LevinshteĭnM. E (Mikhail Efimovich) |
| Collana |
Selected topics in electronics and systems
SiC materials and devices |
| Soggetto topico |
Silicon carbide - Electric properties
Semiconductors |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-12124-X
9786611121242 981-270-685-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Preface; CONTENTS; Growth of Sic Substrates A. Powell, J. Jenny, S. Muller, H. Mcd. Hobgood, V. Tsvetkov, R. Lenoard and C. Carter, Jr.; 1. Introduction; 2. Sic Bulk Growth; 3. Crystal Orientation; 4. Crystal Diameter Enlargement; 5. Substrate Defects; 6. Doping in SIC; 7. Sic Substrates for Microwave Devices; 8. Wafering and Polish; 9. Substrate Cost; 10. Conclusions; Acknowledgments; References; Deep Level Defects in Silicon Carbide A. A. Lebedev; 1. Introduction; 2. Parameters of Deep Centers in Sic; 3. Influence of Impurities on the Growth of Epitaxial Sic Layers
4. Deep Centers and Recombination Processes in Sic5. Conclusion; Acknowledgements; References; Silicon Carbide Junction Field Effect Transistors D. Stephani and P. Friedrichs; 1. Introduction; 2. Lateral SiC-JFETs; 3. The Vertical JFET (VJFET); References; Sic BJTs T. P. Chow and A. K. Agarwal; 1. Introduction; 2, Figures of Merit; 3. Power Bipolar Transistors; 4. Commercialization Challenges; References |
| Record Nr. | UNINA-9910450666403321 |
| New Jersey ; ; London, : World Scientific, 2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
SiC materials and devices [[electronic resource] /] / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein
| SiC materials and devices [[electronic resource] /] / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
| Pubbl/distr/stampa | New Jersey ; ; London, : World Scientific, 2007 |
| Descrizione fisica | 1 online resource (143 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
ShurMichael
RumyantsevSergey L LevinshteĭnM. E (Mikhail Efimovich) |
| Collana |
Selected topics in electronics and systems
SiC materials and devices |
| Soggetto topico |
Silicon carbide - Electric properties
Semiconductors |
| ISBN |
1-281-12124-X
9786611121242 981-270-685-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Preface; CONTENTS; Growth of Sic Substrates A. Powell, J. Jenny, S. Muller, H. Mcd. Hobgood, V. Tsvetkov, R. Lenoard and C. Carter, Jr.; 1. Introduction; 2. Sic Bulk Growth; 3. Crystal Orientation; 4. Crystal Diameter Enlargement; 5. Substrate Defects; 6. Doping in SIC; 7. Sic Substrates for Microwave Devices; 8. Wafering and Polish; 9. Substrate Cost; 10. Conclusions; Acknowledgments; References; Deep Level Defects in Silicon Carbide A. A. Lebedev; 1. Introduction; 2. Parameters of Deep Centers in Sic; 3. Influence of Impurities on the Growth of Epitaxial Sic Layers
4. Deep Centers and Recombination Processes in Sic5. Conclusion; Acknowledgements; References; Silicon Carbide Junction Field Effect Transistors D. Stephani and P. Friedrichs; 1. Introduction; 2. Lateral SiC-JFETs; 3. The Vertical JFET (VJFET); References; Sic BJTs T. P. Chow and A. K. Agarwal; 1. Introduction; 2, Figures of Merit; 3. Power Bipolar Transistors; 4. Commercialization Challenges; References |
| Record Nr. | UNINA-9910784042103321 |
| New Jersey ; ; London, : World Scientific, 2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
SiC materials and devices / / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein
| SiC materials and devices / / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | New Jersey ; ; London, : World Scientific, 2007 |
| Descrizione fisica | 1 online resource (143 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
ShurMichael
RumyantsevSergey LevinshteinM. E (Mikhail Efimovich) |
| Collana |
Selected topics in electronics and systems
SiC materials and devices |
| Soggetto topico |
Silicon carbide - Electric properties
Semiconductors |
| ISBN |
1-281-12124-X
9786611121242 981-270-685-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Preface; CONTENTS; Growth of Sic Substrates A. Powell, J. Jenny, S. Muller, H. Mcd. Hobgood, V. Tsvetkov, R. Lenoard and C. Carter, Jr.; 1. Introduction; 2. Sic Bulk Growth; 3. Crystal Orientation; 4. Crystal Diameter Enlargement; 5. Substrate Defects; 6. Doping in SIC; 7. Sic Substrates for Microwave Devices; 8. Wafering and Polish; 9. Substrate Cost; 10. Conclusions; Acknowledgments; References; Deep Level Defects in Silicon Carbide A. A. Lebedev; 1. Introduction; 2. Parameters of Deep Centers in Sic; 3. Influence of Impurities on the Growth of Epitaxial Sic Layers
4. Deep Centers and Recombination Processes in Sic5. Conclusion; Acknowledgements; References; Silicon Carbide Junction Field Effect Transistors D. Stephani and P. Friedrichs; 1. Introduction; 2. Lateral SiC-JFETs; 3. The Vertical JFET (VJFET); References; Sic BJTs T. P. Chow and A. K. Agarwal; 1. Introduction; 2, Figures of Merit; 3. Power Bipolar Transistors; 4. Commercialization Challenges; References |
| Record Nr. | UNINA-9910814896703321 |
| New Jersey ; ; London, : World Scientific, 2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
SiC materials and devices . Vol. 1 [[electronic resource] /] / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein
| SiC materials and devices . Vol. 1 [[electronic resource] /] / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
| Pubbl/distr/stampa | New Jersey, : World Scientific, 2006 |
| Descrizione fisica | 1 online resource (342 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
ShurMichael
RumyantsevSergey L LevinshteĭnM. E (Mikhail Efimovich) |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Silicon carbide - Electric properties
Semiconductors |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-37331-1
9786611373313 981-277-337-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; Preface; Sic Material Properties; 1 Introduction; 2 Polytypism; 3 Band Structure and Effective Masses; 4 Thermal Properties; 5 Dopants and free charge carriers; 6 Diffusion of Dopants; 7 Impurity Conduction; 8 Minority Carrier Lifetime
9 Properties of SiC/SiO2 Interfaces Acknowledgments; References; SiC Homoepitaxy and Heteroepitaxy; 1 Introduction; 2 SiC homoepitaxial growth; 3 SiC heteroepitaxial growth; 4 Summary; References; Ohmic Contacts to SiC; 1 Introduction; 2 Metal-Semiconductor Contacts 3 Specific Contact Resistance 4 Ohmic Contacts to n-type SiC; 5 Ohmic Contacts to p-type SiC; 6 Long-Term Thermal Stability of Ohmic Contacts to SiC; 8 Conclusion; References; Silicon Carbide Schottky Barrier Diode 1 Introduction 2 SiC Schottky Contacts; 3 High Voltage SiC SBD JBS and MPS diodes; 4 Applications in Power Electronics Circuits; 5 Other Applications of SiC SBD; 6 Summary and Future Challenges; References; High Power SiC PiN Rectifiers; 1 Introduction 2 PiN Rectifier Design and Operation 3 Experimental Results on PiN Rectifiers; 4 Yield and Reliability of SiC Rectifiers; 5 Conclusions; Acknowledgements; References; Silicon Carbide Diodes for Microwave Applications; 1 Introduction; 2 Silicon Carbide Point-Contact Detectors 3 Silicon Carbide Varactors |
| Record Nr. | UNINA-9910450831603321 |
| New Jersey, : World Scientific, 2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
SiC materials and devices . Vol. 1 [[electronic resource] /] / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein
| SiC materials and devices . Vol. 1 [[electronic resource] /] / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
| Pubbl/distr/stampa | New Jersey, : World Scientific, 2006 |
| Descrizione fisica | 1 online resource (342 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
ShurMichael
RumyantsevSergey L LevinshteĭnM. E (Mikhail Efimovich) |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Silicon carbide - Electric properties
Semiconductors |
| ISBN |
1-281-37331-1
9786611373313 981-277-337-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; Preface; Sic Material Properties; 1 Introduction; 2 Polytypism; 3 Band Structure and Effective Masses; 4 Thermal Properties; 5 Dopants and free charge carriers; 6 Diffusion of Dopants; 7 Impurity Conduction; 8 Minority Carrier Lifetime
9 Properties of SiC/SiO2 Interfaces Acknowledgments; References; SiC Homoepitaxy and Heteroepitaxy; 1 Introduction; 2 SiC homoepitaxial growth; 3 SiC heteroepitaxial growth; 4 Summary; References; Ohmic Contacts to SiC; 1 Introduction; 2 Metal-Semiconductor Contacts 3 Specific Contact Resistance 4 Ohmic Contacts to n-type SiC; 5 Ohmic Contacts to p-type SiC; 6 Long-Term Thermal Stability of Ohmic Contacts to SiC; 8 Conclusion; References; Silicon Carbide Schottky Barrier Diode 1 Introduction 2 SiC Schottky Contacts; 3 High Voltage SiC SBD JBS and MPS diodes; 4 Applications in Power Electronics Circuits; 5 Other Applications of SiC SBD; 6 Summary and Future Challenges; References; High Power SiC PiN Rectifiers; 1 Introduction 2 PiN Rectifier Design and Operation 3 Experimental Results on PiN Rectifiers; 4 Yield and Reliability of SiC Rectifiers; 5 Conclusions; Acknowledgements; References; Silicon Carbide Diodes for Microwave Applications; 1 Introduction; 2 Silicon Carbide Point-Contact Detectors 3 Silicon Carbide Varactors |
| Record Nr. | UNINA-9910784807003321 |
| New Jersey, : World Scientific, 2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
