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Advances in SiC / SiC ceramic composites : developments and applications in energy systems, ceramic transactions / / edited by Kohyama, Akira [and three others]
| Advances in SiC / SiC ceramic composites : developments and applications in energy systems, ceramic transactions / / edited by Kohyama, Akira [and three others] |
| Pubbl/distr/stampa | Westerville, Ohio : , : The American Ceramic Society, , 2002 |
| Descrizione fisica | 1 online resource (390 p.) |
| Disciplina | 546.6832 |
| Collana | Ceramic Transactions Series |
| Soggetto topico |
Silicon carbide
Ceramic materials Composite materials |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-118-40602-8
1-118-40601-X |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Advanced SiC/SiC Ceramic Composites: Developments and Applications in Energy Systems; Contents; Preface; Processing for SiC/SiC Composites; Overview of CREST-ACE Program for SiC/SiC Ceramic Composites and Their Energy System Applications; Processing of SiC/SiC Fibrous Composites According to CVI-Techniques; Research on the High Performance Silicon Carbide Ceramics and Silicon Carbide Based Composites; Optimization and Characterization of Chemical Vapor Infiltrated SiC/SiC Composites
Optimizing the Fabrication Process for Excellent Mechanical Properties in Stoichiometric SiC Fiber/FCVI SiC Matrix CompositesA Novel Processing Technique of Silicon Carbide-Based Ceramic Composites for High Temperature Applications; Facile Fabrication of SiC Matrix Composites Using Novel Preceramic Polymers; Process Design for SiC/SiC Composite with Polymeric Precursor; Matrix Filling Behavior of SiC/SiC Composite by Whiskering and the CVI Process; Development of SiC/SiC Composites by the Melt Infiltration Process; Processing for SiC/SiC Composite Constituent Mechanical,Thermochemical, and Microstructural Characterization of AHPCS-Derived SiCPolysilane-Based Precursors for SiC/SiC Composites; Present Status and Future Trends on the Development and Application of Continuous SiC Fibers; Properties of BN Coating on SiC Fiber by the Continuous CVD Process; SiC Ceramic Fibers Synthesized from Polycarbosilane-Polymethylsilane Polymer Blends; Effect of Residual Silicon Phase on Reaction-Sintered Silicon Carbide; Characterization of Thermomechanical Performance; Development of Test Standards for Continuous Fiber Ceramic Composites in the United States Effects of Interlayers on Interfacial Shear Strength and Flexural Properties of Tyranno-SA Fiber-Reinforced CVI-SiC/SiC CompositesFlexural Properties of Several SiC Fiber-Reinforced CVI-SiC Matrix Composites; A Finite-Element Analysis of the Thermal Diffusivity/Conductivity of SiC/SiC Composites; Microstructure Evolution in Highly Crystalline SiC Fiber Under Applied Stress Environments; Joining Technologies and Advanced Energy Applications; High Temperature Brazing for SiC and SiCf/SiC Ceramic Matrix Composites; Joining SiC-Based Ceramics and Composites with Preceramic Polymers Modeling of Fracture Strength of SiC/SiC Composite Joints by Using Interface Elements |
| Record Nr. | UNINA-9910137711503321 |
| Westerville, Ohio : , : The American Ceramic Society, , 2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in SiC / SiC ceramic composites : developments and applications in energy systems, ceramic transactions / / edited by Kohyama, Akira [and three others]
| Advances in SiC / SiC ceramic composites : developments and applications in energy systems, ceramic transactions / / edited by Kohyama, Akira [and three others] |
| Pubbl/distr/stampa | Westerville, Ohio : , : The American Ceramic Society, , 2002 |
| Descrizione fisica | 1 online resource (390 p.) |
| Disciplina | 546.6832 |
| Collana | Ceramic Transactions Series |
| Soggetto topico |
Silicon carbide
Ceramic materials Composite materials |
| ISBN |
1-118-40602-8
1-118-40601-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Advanced SiC/SiC Ceramic Composites: Developments and Applications in Energy Systems; Contents; Preface; Processing for SiC/SiC Composites; Overview of CREST-ACE Program for SiC/SiC Ceramic Composites and Their Energy System Applications; Processing of SiC/SiC Fibrous Composites According to CVI-Techniques; Research on the High Performance Silicon Carbide Ceramics and Silicon Carbide Based Composites; Optimization and Characterization of Chemical Vapor Infiltrated SiC/SiC Composites
Optimizing the Fabrication Process for Excellent Mechanical Properties in Stoichiometric SiC Fiber/FCVI SiC Matrix CompositesA Novel Processing Technique of Silicon Carbide-Based Ceramic Composites for High Temperature Applications; Facile Fabrication of SiC Matrix Composites Using Novel Preceramic Polymers; Process Design for SiC/SiC Composite with Polymeric Precursor; Matrix Filling Behavior of SiC/SiC Composite by Whiskering and the CVI Process; Development of SiC/SiC Composites by the Melt Infiltration Process; Processing for SiC/SiC Composite Constituent Mechanical,Thermochemical, and Microstructural Characterization of AHPCS-Derived SiCPolysilane-Based Precursors for SiC/SiC Composites; Present Status and Future Trends on the Development and Application of Continuous SiC Fibers; Properties of BN Coating on SiC Fiber by the Continuous CVD Process; SiC Ceramic Fibers Synthesized from Polycarbosilane-Polymethylsilane Polymer Blends; Effect of Residual Silicon Phase on Reaction-Sintered Silicon Carbide; Characterization of Thermomechanical Performance; Development of Test Standards for Continuous Fiber Ceramic Composites in the United States Effects of Interlayers on Interfacial Shear Strength and Flexural Properties of Tyranno-SA Fiber-Reinforced CVI-SiC/SiC CompositesFlexural Properties of Several SiC Fiber-Reinforced CVI-SiC Matrix Composites; A Finite-Element Analysis of the Thermal Diffusivity/Conductivity of SiC/SiC Composites; Microstructure Evolution in Highly Crystalline SiC Fiber Under Applied Stress Environments; Joining Technologies and Advanced Energy Applications; High Temperature Brazing for SiC and SiCf/SiC Ceramic Matrix Composites; Joining SiC-Based Ceramics and Composites with Preceramic Polymers Modeling of Fracture Strength of SiC/SiC Composite Joints by Using Interface Elements |
| Record Nr. | UNISA-996198972503316 |
| Westerville, Ohio : , : The American Ceramic Society, , 2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Advances in SiC / SiC ceramic composites : developments and applications in energy systems, ceramic transactions / / edited by Kohyama, Akira [and three others]
| Advances in SiC / SiC ceramic composites : developments and applications in energy systems, ceramic transactions / / edited by Kohyama, Akira [and three others] |
| Pubbl/distr/stampa | Westerville, Ohio : , : The American Ceramic Society, , 2002 |
| Descrizione fisica | 1 online resource (390 p.) |
| Disciplina | 546.6832 |
| Collana | Ceramic Transactions Series |
| Soggetto topico |
Silicon carbide
Ceramic materials Composite materials |
| ISBN |
1-118-40602-8
1-118-40601-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Advanced SiC/SiC Ceramic Composites: Developments and Applications in Energy Systems; Contents; Preface; Processing for SiC/SiC Composites; Overview of CREST-ACE Program for SiC/SiC Ceramic Composites and Their Energy System Applications; Processing of SiC/SiC Fibrous Composites According to CVI-Techniques; Research on the High Performance Silicon Carbide Ceramics and Silicon Carbide Based Composites; Optimization and Characterization of Chemical Vapor Infiltrated SiC/SiC Composites
Optimizing the Fabrication Process for Excellent Mechanical Properties in Stoichiometric SiC Fiber/FCVI SiC Matrix CompositesA Novel Processing Technique of Silicon Carbide-Based Ceramic Composites for High Temperature Applications; Facile Fabrication of SiC Matrix Composites Using Novel Preceramic Polymers; Process Design for SiC/SiC Composite with Polymeric Precursor; Matrix Filling Behavior of SiC/SiC Composite by Whiskering and the CVI Process; Development of SiC/SiC Composites by the Melt Infiltration Process; Processing for SiC/SiC Composite Constituent Mechanical,Thermochemical, and Microstructural Characterization of AHPCS-Derived SiCPolysilane-Based Precursors for SiC/SiC Composites; Present Status and Future Trends on the Development and Application of Continuous SiC Fibers; Properties of BN Coating on SiC Fiber by the Continuous CVD Process; SiC Ceramic Fibers Synthesized from Polycarbosilane-Polymethylsilane Polymer Blends; Effect of Residual Silicon Phase on Reaction-Sintered Silicon Carbide; Characterization of Thermomechanical Performance; Development of Test Standards for Continuous Fiber Ceramic Composites in the United States Effects of Interlayers on Interfacial Shear Strength and Flexural Properties of Tyranno-SA Fiber-Reinforced CVI-SiC/SiC CompositesFlexural Properties of Several SiC Fiber-Reinforced CVI-SiC Matrix Composites; A Finite-Element Analysis of the Thermal Diffusivity/Conductivity of SiC/SiC Composites; Microstructure Evolution in Highly Crystalline SiC Fiber Under Applied Stress Environments; Joining Technologies and Advanced Energy Applications; High Temperature Brazing for SiC and SiCf/SiC Ceramic Matrix Composites; Joining SiC-Based Ceramics and Composites with Preceramic Polymers Modeling of Fracture Strength of SiC/SiC Composite Joints by Using Interface Elements |
| Record Nr. | UNINA-9910830228303321 |
| Westerville, Ohio : , : The American Ceramic Society, , 2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in silicon carbide processing and applications / / Stephen E. Saddow, Anant Agarwal, editors
| Advances in silicon carbide processing and applications / / Stephen E. Saddow, Anant Agarwal, editors |
| Pubbl/distr/stampa | Boston : , : Artech House, , [2004] |
| Descrizione fisica | 1 online resource (227 p.) |
| Disciplina | 621.3815/2 |
| Collana | Semiconductor materials and devices series |
| Soggetto topico |
Silicon carbide
Semiconductors |
| Soggetto genere / forma | Electronic books. |
| ISBN | 1-58053-741-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen [and others] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour. |
| Record Nr. | UNINA-9910450093003321 |
| Boston : , : Artech House, , [2004] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in silicon carbide processing and applications / / Stephen E. Saddow, Anant Agarwal, editors
| Advances in silicon carbide processing and applications / / Stephen E. Saddow, Anant Agarwal, editors |
| Pubbl/distr/stampa | Boston : , : Artech House, , [2004] |
| Descrizione fisica | 1 online resource (227 p.) |
| Disciplina | 621.3815/2 |
| Collana | Semiconductor materials and devices series |
| Soggetto topico |
Silicon carbide
Semiconductors |
| ISBN | 1-58053-741-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen [and others] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour. |
| Record Nr. | UNINA-9910783462303321 |
| Boston : , : Artech House, , [2004] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in silicon carbide processing and applications / / Stephen E. Saddow, Anant Agarwal, editors
| Advances in silicon carbide processing and applications / / Stephen E. Saddow, Anant Agarwal, editors |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Boston, : Artech House, c2004 |
| Descrizione fisica | 1 online resource (227 p.) |
| Disciplina | 621.3815/2 |
| Altri autori (Persone) |
SaddowStephen E
AgarwalAnant (Anant K.) |
| Collana | Semiconductor materials and devices series |
| Soggetto topico |
Silicon carbide
Semiconductors |
| ISBN |
9781580537414
1580537413 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen [and others] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour. |
| Record Nr. | UNINA-9910973068903321 |
| Boston, : Artech House, c2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Capacitive discharge circuit for surge current evaluation of SiC / / Mark R. Morgenstern
| Capacitive discharge circuit for surge current evaluation of SiC / / Mark R. Morgenstern |
| Autore | Morgenstern Mark R. |
| Pubbl/distr/stampa | Adelphi, MD : , : Army Research Laboratory, , [2009] |
| Descrizione fisica | 1 online resource (iv, 4 pages) : color illustrations |
| Soggetto topico |
Transients (Electricity)
Electric circuits Silicon carbide |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Capacitive discharge circuit for surge current evaluation of silicon carbide |
| Record Nr. | UNINA-9910699577003321 |
Morgenstern Mark R.
|
||
| Adelphi, MD : , : Army Research Laboratory, , [2009] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Defects of Solid Semiconductor Structures
| Defects of Solid Semiconductor Structures |
| Autore | Riccio Michele |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Zurich : , : Trans Tech Publications, Limited, , 2024 |
| Descrizione fisica | 1 online resource (179 pages) |
| Altri autori (Persone) |
IraceAndrea
BreglioGiovanni |
| Collana | Defect and Diffusion Forum |
| Soggetto topico |
Defects
Silicon carbide |
| ISBN |
9783036416359
3036416358 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Defects of Solid Semiconductor Structures -- Preface -- Table of Contents -- Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface -- Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter -- Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer -- Study on Quantification of Correlation between Current Density and UV Irradiation Intensity, Leading to Bar Shaped 1SSF Expansion -- Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging -- Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates -- Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment -- The Role of Defects on SiC Device Performance and Ways to Mitigate them -- Emission of Trapped Electrons from the 4H-SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures -- SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control -- Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography -- Crystal Originated Defect Monitoring and Reduction in Production Grade SmartSiC™ Engineered Substrates -- Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures -- Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations -- Differences between Polar-Face and Non-Polar Face 4H-SiC/SiO2 Interfaces Revealed by Magnetic Resonance Spectroscopy -- Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs -- Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers.
Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy -- A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC -- Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects -- Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals -- Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography -- High-Volume SiC Epitaxial Layer Manufacturing-Maintaining High Materials Quality of Lab Results in Production -- Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering -- Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing® -- Charge Carrier Capture by Prominent Defect Centers in 4H-SiC -- Keyword Index -- Author Index. |
| Record Nr. | UNINA-9911006725003321 |
|
Riccio Michele
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| Zurich : , : Trans Tech Publications, Limited, , 2024 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Design and analysis of a 15-kV package for wide bandgap semiconductor devices [[electronic resource] /] / by Dimeji Ibitayo and C. Wesley Tipton
| Design and analysis of a 15-kV package for wide bandgap semiconductor devices [[electronic resource] /] / by Dimeji Ibitayo and C. Wesley Tipton |
| Autore | Ibitayo Dimeji |
| Pubbl/distr/stampa | Adelphi, MD : , : Army Research Laboratory, , [2004] |
| Descrizione fisica | 1 online resource (iv, 12 pages) : color illustrations |
| Altri autori (Persone) | TiptonCharles W (Charles Wesley) |
| Collana | ARL-TR |
| Soggetto topico |
Wide gap semiconductors - Design and construction
Silicon carbide |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910697176603321 |
|
Ibitayo Dimeji
|
||
| Adelphi, MD : , : Army Research Laboratory, , [2004] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Design and test evaluation of SiC diode modules [[electronic resource] /] / by Timothy E. Griffin and M. Gail Koebke
| Design and test evaluation of SiC diode modules [[electronic resource] /] / by Timothy E. Griffin and M. Gail Koebke |
| Autore | Griffin Timothy E |
| Pubbl/distr/stampa | Adelphi, MD : , : Army Research Laboratory, , [2004] |
| Descrizione fisica | 1 online resource (vi, 36 pages) : color illustrations |
| Altri autori (Persone) | KoebkeM. Gail |
| Collana | ARL-TR |
| Soggetto topico |
Silicon carbide
Diodes, Schottky-barrier - Evaluation |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910697176703321 |
|
Griffin Timothy E
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| Adelphi, MD : , : Army Research Laboratory, , [2004] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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