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Effect of oxygen-nitrogen ratio on sinterability of Sialons / / Alan Arias
| Effect of oxygen-nitrogen ratio on sinterability of Sialons / / Alan Arias |
| Autore | Arias Alan |
| Pubbl/distr/stampa | [Washington, D.C.] : , : National Aeronautics and Space Administration, Scientific and Technical Information Office, , April 1979 |
| Descrizione fisica | 1 online resource (approximately 25 pages) : illustrations |
| Collana | NASA/TP |
| Soggetto topico |
Sintering
Ceramics Silicon alloys |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910717092603321 |
Arias Alan
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| [Washington, D.C.] : , : National Aeronautics and Space Administration, Scientific and Technical Information Office, , April 1979 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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High-efficiency amorphous silicon and nanocrystalline silicon-based solar cells and modules [[electronic resource] ] : final technical progress report, 30 January 2006 - 29 January 2008 / / S. Guha and J. Yang
| High-efficiency amorphous silicon and nanocrystalline silicon-based solar cells and modules [[electronic resource] ] : final technical progress report, 30 January 2006 - 29 January 2008 / / S. Guha and J. Yang |
| Autore | Guha S |
| Pubbl/distr/stampa | Golden, Colo. : , : National Renewable Energy Laboratory, , [2008] |
| Descrizione fisica | 1 online resource (xi, 79 pages) : illustrations |
| Altri autori (Persone) | YangJeffrey |
| Collana | NREL/SR |
| Soggetto topico |
Photovoltaic cells - Research
Solar cells Silicon alloys |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | High-Efficiency Amorphous Silicon and Nanocrystalline Silicon-Based Solar Cells and Modules |
| Record Nr. | UNINA-9910698521503321 |
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Guha S
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| Golden, Colo. : , : National Renewable Energy Laboratory, , [2008] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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ISTDM : 2014 7th International Silicon-Germanium Technology and Device Meeting : 2-4 June 2014
| ISTDM : 2014 7th International Silicon-Germanium Technology and Device Meeting : 2-4 June 2014 |
| Pubbl/distr/stampa | New York : , : IEEE, , 2014 |
| Descrizione fisica | 1 online resource (102 pages) |
| Soggetto topico |
Silicon alloys
Semiconductors Germanium alloys |
| ISBN | 1-4799-5428-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996279696003316 |
| New York : , : IEEE, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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ISTDM : 2014 7th International Silicon-Germanium Technology and Device Meeting : 2-4 June 2014
| ISTDM : 2014 7th International Silicon-Germanium Technology and Device Meeting : 2-4 June 2014 |
| Pubbl/distr/stampa | New York : , : IEEE, , 2014 |
| Descrizione fisica | 1 online resource (102 pages) |
| Soggetto topico |
Silicon alloys
Semiconductors Germanium alloys |
| ISBN | 1-4799-5428-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910141900103321 |
| New York : , : IEEE, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Properties of amorphous silicon and its alloys
| Properties of amorphous silicon and its alloys |
| Pubbl/distr/stampa | [Place of publication not identified], : INSPEC IEE, 1998 |
| Disciplina | 620.1/93 |
| Collana | EMIS datareviews series Properties of amorphous silicon and its alloys |
| Soggetto topico |
Silicon
Silicon alloys Amorphous semiconductors Chemistry Physical Sciences & Mathematics Inorganic Chemistry |
| ISBN | 1-59124-876-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Amorphous silicon and its alloys |
| Record Nr. | UNINA-9911004813003321 |
| [Place of publication not identified], : INSPEC IEE, 1998 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Properties of semiconductor alloys [[electronic resource] ] : group-IV, III-V and II-VI semiconductors / / Sadao Adachi
| Properties of semiconductor alloys [[electronic resource] ] : group-IV, III-V and II-VI semiconductors / / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009 |
| Descrizione fisica | 1 online resource (424 p.) |
| Disciplina | 621.3815/2 |
| Collana | Wiley series in materials for electronic & optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Semiconductors - Analysis Silicon alloys |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-12352-1
9786612123528 0-470-74438-3 0-470-74439-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Abbreviations and Acronyms; Introductory Remarks; A.1 AN ALLOY AND A COMPOUND; A.2 GRIMM-SOMMERFELD RULE; A.3 AN INTERPOLATION SCHEME; REFERENCES; 1 Structural Properties; 1.1 IONICITY; 1.2 ELEMENTAL ISOTOPIC ABUNDANCE AND MOLECULAR WEIGHT; 1.3 CRYSTAL STRUCTURE; 1.3.1 Random Alloy; 1.3.2 Spontaneous Ordering; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 1.4 LATTICE CONSTANT AND RELATED PARAMETERS
1.4.1 CuAu Alloy: Ordered and Disordered States1.4.2 Non-alloyed Semiconductor; 1.4.3 Semiconductor Alloy; (a) Group-IV semiconductor; (b) III-V semiconductor; (c) II-VI semiconductor; 1.5 COHERENT EPITAXY AND STRAIN PROBLEM; 1.5.1 Bilayer Model; 1.5.2 Elastic Strain and Lattice Deformation; 1.5.3 Critical Thickness; 1.6 STRUCTURAL PHASE TRANSITION; 1.7 CLEAVAGE PLANE; 1.7.1 Cleavage; 1.7.2 Surface Energy; REFERENCES; 2 Thermal Properties; 2.1 MELTING POINT AND RELATED PARAMETERS; 2.1.1 Phase Diagram; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy (c) II-VI semiconductor alloy2.1.2 Melting Point; 2.2 SPECIFIC HEAT; 2.2.1 Group-IV Semiconductor Alloy; 2.2.2 III-V Semiconductor Alloy; 2.2.3 II-VI Semiconductor Alloy; 2.3 DEBYE TEMPERATURE; 2.3.1 General Considerations; 2.3.2 Group-IV Semiconductor Alloy; 2.3.3 III-V Semiconductor Alloy; 2.3.4 II-VI Semiconductor Alloy; 2.4 THERMAL EXPANSION COEFFICIENT; 2.4.1 Group-IV Semiconductor Alloy; 2.4.2 III-V Semiconductor Alloy; 2.4.3 II-VI Semiconductor Alloy; 2.5 THERMAL CONDUCTIVITY AND DIFFUSIVITY; 2.5.1 Thermal Conductivity; (a) General considerations; (b) Group-IV semiconductor alloy (c) III-V semiconductor alloy(d) II-VI semiconductor alloy; 2.5.2 Thermal Diffusivity; (a) General considerations; (b) Alloy value; REFERENCES; 3 Elastic Properties; 3.1 ELASTIC CONSTANT; 3.1.1 General Considerations; 3.1.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 THIRD-ORDER ELASTIC CONSTANT; 3.3 YOUNG'S MODULUS, POISSON'S RATIO AND SIMILAR PROPERTIES; 3.3.1 Group-IV Semiconductor Alloy; 3.3.2 III-V Semiconductor Alloy 3.3.3 II-VI Semiconductor Alloy3.4 MICROHARDNESS; 3.4.1 Group-IV Semiconductor Alloy; 3.4.2 III-V Semiconductor Alloy; 3.4.3 II-VI Semiconductor Alloy; 3.5 SOUND VELOCITY; REFERENCES; 4 Lattice Dynamic Properties; 4.1 PHONON DISPERSION RELATIONSHIPS; 4.2 PHONON FREQUENCY; 4.2.1 General Considerations; 4.2.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.2.3 External Perturbation Effect; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.3 MODE GRÜNEISEN PARAMETER 4.3.1 Phonon Deformation Potential |
| Record Nr. | UNINA-9910146134903321 |
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Adachi Sadao <1950->
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| Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Properties of semiconductor alloys [[electronic resource] ] : group-IV, III-V and II-VI semiconductors / / Sadao Adachi
| Properties of semiconductor alloys [[electronic resource] ] : group-IV, III-V and II-VI semiconductors / / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009 |
| Descrizione fisica | 1 online resource (424 p.) |
| Disciplina | 621.3815/2 |
| Collana | Wiley series in materials for electronic & optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Semiconductors - Analysis Silicon alloys |
| ISBN |
1-282-12352-1
9786612123528 0-470-74438-3 0-470-74439-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Abbreviations and Acronyms; Introductory Remarks; A.1 AN ALLOY AND A COMPOUND; A.2 GRIMM-SOMMERFELD RULE; A.3 AN INTERPOLATION SCHEME; REFERENCES; 1 Structural Properties; 1.1 IONICITY; 1.2 ELEMENTAL ISOTOPIC ABUNDANCE AND MOLECULAR WEIGHT; 1.3 CRYSTAL STRUCTURE; 1.3.1 Random Alloy; 1.3.2 Spontaneous Ordering; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 1.4 LATTICE CONSTANT AND RELATED PARAMETERS
1.4.1 CuAu Alloy: Ordered and Disordered States1.4.2 Non-alloyed Semiconductor; 1.4.3 Semiconductor Alloy; (a) Group-IV semiconductor; (b) III-V semiconductor; (c) II-VI semiconductor; 1.5 COHERENT EPITAXY AND STRAIN PROBLEM; 1.5.1 Bilayer Model; 1.5.2 Elastic Strain and Lattice Deformation; 1.5.3 Critical Thickness; 1.6 STRUCTURAL PHASE TRANSITION; 1.7 CLEAVAGE PLANE; 1.7.1 Cleavage; 1.7.2 Surface Energy; REFERENCES; 2 Thermal Properties; 2.1 MELTING POINT AND RELATED PARAMETERS; 2.1.1 Phase Diagram; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy (c) II-VI semiconductor alloy2.1.2 Melting Point; 2.2 SPECIFIC HEAT; 2.2.1 Group-IV Semiconductor Alloy; 2.2.2 III-V Semiconductor Alloy; 2.2.3 II-VI Semiconductor Alloy; 2.3 DEBYE TEMPERATURE; 2.3.1 General Considerations; 2.3.2 Group-IV Semiconductor Alloy; 2.3.3 III-V Semiconductor Alloy; 2.3.4 II-VI Semiconductor Alloy; 2.4 THERMAL EXPANSION COEFFICIENT; 2.4.1 Group-IV Semiconductor Alloy; 2.4.2 III-V Semiconductor Alloy; 2.4.3 II-VI Semiconductor Alloy; 2.5 THERMAL CONDUCTIVITY AND DIFFUSIVITY; 2.5.1 Thermal Conductivity; (a) General considerations; (b) Group-IV semiconductor alloy (c) III-V semiconductor alloy(d) II-VI semiconductor alloy; 2.5.2 Thermal Diffusivity; (a) General considerations; (b) Alloy value; REFERENCES; 3 Elastic Properties; 3.1 ELASTIC CONSTANT; 3.1.1 General Considerations; 3.1.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 THIRD-ORDER ELASTIC CONSTANT; 3.3 YOUNG'S MODULUS, POISSON'S RATIO AND SIMILAR PROPERTIES; 3.3.1 Group-IV Semiconductor Alloy; 3.3.2 III-V Semiconductor Alloy 3.3.3 II-VI Semiconductor Alloy3.4 MICROHARDNESS; 3.4.1 Group-IV Semiconductor Alloy; 3.4.2 III-V Semiconductor Alloy; 3.4.3 II-VI Semiconductor Alloy; 3.5 SOUND VELOCITY; REFERENCES; 4 Lattice Dynamic Properties; 4.1 PHONON DISPERSION RELATIONSHIPS; 4.2 PHONON FREQUENCY; 4.2.1 General Considerations; 4.2.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.2.3 External Perturbation Effect; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.3 MODE GRÜNEISEN PARAMETER 4.3.1 Phonon Deformation Potential |
| Record Nr. | UNINA-9910830624003321 |
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Adachi Sadao <1950->
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| Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Properties of semiconductor alloys : group-IV, III-V and II-VI semiconductors / / Sadao Adachi
| Properties of semiconductor alloys : group-IV, III-V and II-VI semiconductors / / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009 |
| Descrizione fisica | 1 online resource (424 p.) |
| Disciplina | 621.3815/2 |
| Collana | Wiley series in materials for electronic & optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Semiconductors - Analysis Silicon alloys |
| ISBN |
9786612123528
9781282123526 1282123521 9780470744383 0470744383 9780470744390 0470744391 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Abbreviations and Acronyms; Introductory Remarks; A.1 AN ALLOY AND A COMPOUND; A.2 GRIMM-SOMMERFELD RULE; A.3 AN INTERPOLATION SCHEME; REFERENCES; 1 Structural Properties; 1.1 IONICITY; 1.2 ELEMENTAL ISOTOPIC ABUNDANCE AND MOLECULAR WEIGHT; 1.3 CRYSTAL STRUCTURE; 1.3.1 Random Alloy; 1.3.2 Spontaneous Ordering; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 1.4 LATTICE CONSTANT AND RELATED PARAMETERS
1.4.1 CuAu Alloy: Ordered and Disordered States1.4.2 Non-alloyed Semiconductor; 1.4.3 Semiconductor Alloy; (a) Group-IV semiconductor; (b) III-V semiconductor; (c) II-VI semiconductor; 1.5 COHERENT EPITAXY AND STRAIN PROBLEM; 1.5.1 Bilayer Model; 1.5.2 Elastic Strain and Lattice Deformation; 1.5.3 Critical Thickness; 1.6 STRUCTURAL PHASE TRANSITION; 1.7 CLEAVAGE PLANE; 1.7.1 Cleavage; 1.7.2 Surface Energy; REFERENCES; 2 Thermal Properties; 2.1 MELTING POINT AND RELATED PARAMETERS; 2.1.1 Phase Diagram; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy (c) II-VI semiconductor alloy2.1.2 Melting Point; 2.2 SPECIFIC HEAT; 2.2.1 Group-IV Semiconductor Alloy; 2.2.2 III-V Semiconductor Alloy; 2.2.3 II-VI Semiconductor Alloy; 2.3 DEBYE TEMPERATURE; 2.3.1 General Considerations; 2.3.2 Group-IV Semiconductor Alloy; 2.3.3 III-V Semiconductor Alloy; 2.3.4 II-VI Semiconductor Alloy; 2.4 THERMAL EXPANSION COEFFICIENT; 2.4.1 Group-IV Semiconductor Alloy; 2.4.2 III-V Semiconductor Alloy; 2.4.3 II-VI Semiconductor Alloy; 2.5 THERMAL CONDUCTIVITY AND DIFFUSIVITY; 2.5.1 Thermal Conductivity; (a) General considerations; (b) Group-IV semiconductor alloy (c) III-V semiconductor alloy(d) II-VI semiconductor alloy; 2.5.2 Thermal Diffusivity; (a) General considerations; (b) Alloy value; REFERENCES; 3 Elastic Properties; 3.1 ELASTIC CONSTANT; 3.1.1 General Considerations; 3.1.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 THIRD-ORDER ELASTIC CONSTANT; 3.3 YOUNG'S MODULUS, POISSON'S RATIO AND SIMILAR PROPERTIES; 3.3.1 Group-IV Semiconductor Alloy; 3.3.2 III-V Semiconductor Alloy 3.3.3 II-VI Semiconductor Alloy3.4 MICROHARDNESS; 3.4.1 Group-IV Semiconductor Alloy; 3.4.2 III-V Semiconductor Alloy; 3.4.3 II-VI Semiconductor Alloy; 3.5 SOUND VELOCITY; REFERENCES; 4 Lattice Dynamic Properties; 4.1 PHONON DISPERSION RELATIONSHIPS; 4.2 PHONON FREQUENCY; 4.2.1 General Considerations; 4.2.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.2.3 External Perturbation Effect; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.3 MODE GRÜNEISEN PARAMETER 4.3.1 Phonon Deformation Potential |
| Record Nr. | UNINA-9911020072703321 |
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Adachi Sadao <1950->
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| Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon-based materials and devices / / edited by Hari Singh Nalwa
| Silicon-based materials and devices / / edited by Hari Singh Nalwa |
| Pubbl/distr/stampa | San Diego, : Academic Press, c2001 |
| Descrizione fisica | 1 online resource (646 p.) |
| Disciplina | 620.1/93 |
| Altri autori (Persone) | NalwaHari Singh <1954-> |
| Soggetto topico |
Silicon
Silicon alloys Silicon compounds Silicon - Electric properties |
| ISBN |
1-283-15155-3
9786613151551 0-08-054123-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | v. 1. Materials and processing -- v. 2. Properties and devices. |
| Record Nr. | UNINA-9911004760303321 |
| San Diego, : Academic Press, c2001 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon-germanium (SiGe) nanostructures : production, properties and applications in electronics / / edited by Yasuhiro Shiraki and Noritaka Usami
| Silicon-germanium (SiGe) nanostructures : production, properties and applications in electronics / / edited by Yasuhiro Shiraki and Noritaka Usami |
| Pubbl/distr/stampa | Oxford, : Woodhead Pub., 2011 |
| Descrizione fisica | 1 online resource (649 p.) |
| Disciplina | 620.118 |
| Altri autori (Persone) |
ShirakiYasuhiro
UsamiNoritaka |
| Collana | Woodhead Publishing in materials |
| Soggetto topico |
Nanostructured materials
Silicon alloys Germanium alloys Electronic circuits Nanoelectronics |
| ISBN |
0-85709-142-5
1-61344-372-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | pt. 1. Introduction -- pt. 2. Formation of nanostructures -- pt. 3. Material properties of SiGe nanostructures -- pt. 4. Devices using silicon, germanium and silicon-germanium (Si, Ge and SiGe) alloys. |
| Record Nr. | UNINA-9911004730303321 |
| Oxford, : Woodhead Pub., 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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