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Effect of oxygen-nitrogen ratio on sinterability of Sialons / / Alan Arias
Effect of oxygen-nitrogen ratio on sinterability of Sialons / / Alan Arias
Autore Arias Alan
Pubbl/distr/stampa [Washington, D.C.] : , : National Aeronautics and Space Administration, Scientific and Technical Information Office, , April 1979
Descrizione fisica 1 online resource (approximately 25 pages) : illustrations
Collana NASA/TP
Soggetto topico Sintering
Ceramics
Silicon alloys
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910717092603321
Arias Alan  
[Washington, D.C.] : , : National Aeronautics and Space Administration, Scientific and Technical Information Office, , April 1979
Materiale a stampa
Lo trovi qui: Univ. Federico II
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High-efficiency amorphous silicon and nanocrystalline silicon-based solar cells and modules [[electronic resource] ] : final technical progress report, 30 January 2006 - 29 January 2008 / / S. Guha and J. Yang
High-efficiency amorphous silicon and nanocrystalline silicon-based solar cells and modules [[electronic resource] ] : final technical progress report, 30 January 2006 - 29 January 2008 / / S. Guha and J. Yang
Autore Guha S
Pubbl/distr/stampa Golden, Colo. : , : National Renewable Energy Laboratory, , [2008]
Descrizione fisica 1 online resource (xi, 79 pages) : illustrations
Altri autori (Persone) YangJeffrey
Collana NREL/SR
Soggetto topico Photovoltaic cells - Research
Solar cells
Silicon alloys
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti High-Efficiency Amorphous Silicon and Nanocrystalline Silicon-Based Solar Cells and Modules
Record Nr. UNINA-9910698521503321
Guha S  
Golden, Colo. : , : National Renewable Energy Laboratory, , [2008]
Materiale a stampa
Lo trovi qui: Univ. Federico II
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ISTDM : 2014 7th International Silicon-Germanium Technology and Device Meeting : 2-4 June 2014
ISTDM : 2014 7th International Silicon-Germanium Technology and Device Meeting : 2-4 June 2014
Pubbl/distr/stampa New York : , : IEEE, , 2014
Descrizione fisica 1 online resource (102 pages)
Soggetto topico Silicon alloys
Semiconductors
Germanium alloys
ISBN 1-4799-5428-4
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996279696003316
New York : , : IEEE, , 2014
Materiale a stampa
Lo trovi qui: Univ. di Salerno
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ISTDM : 2014 7th International Silicon-Germanium Technology and Device Meeting : 2-4 June 2014
ISTDM : 2014 7th International Silicon-Germanium Technology and Device Meeting : 2-4 June 2014
Pubbl/distr/stampa New York : , : IEEE, , 2014
Descrizione fisica 1 online resource (102 pages)
Soggetto topico Silicon alloys
Semiconductors
Germanium alloys
ISBN 1-4799-5428-4
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910141900103321
New York : , : IEEE, , 2014
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Properties of semiconductor alloys [[electronic resource] ] : group-IV, III-V and II-VI semiconductors / / Sadao Adachi
Properties of semiconductor alloys [[electronic resource] ] : group-IV, III-V and II-VI semiconductors / / Sadao Adachi
Autore Adachi Sadao <1950->
Pubbl/distr/stampa Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009
Descrizione fisica 1 online resource (424 p.)
Disciplina 621.3815/2
Collana Wiley series in materials for electronic & optoelectronic applications
Soggetto topico Semiconductors - Materials
Semiconductors - Analysis
Silicon alloys
Soggetto genere / forma Electronic books.
ISBN 1-282-12352-1
9786612123528
0-470-74438-3
0-470-74439-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Abbreviations and Acronyms; Introductory Remarks; A.1 AN ALLOY AND A COMPOUND; A.2 GRIMM-SOMMERFELD RULE; A.3 AN INTERPOLATION SCHEME; REFERENCES; 1 Structural Properties; 1.1 IONICITY; 1.2 ELEMENTAL ISOTOPIC ABUNDANCE AND MOLECULAR WEIGHT; 1.3 CRYSTAL STRUCTURE; 1.3.1 Random Alloy; 1.3.2 Spontaneous Ordering; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 1.4 LATTICE CONSTANT AND RELATED PARAMETERS
1.4.1 CuAu Alloy: Ordered and Disordered States1.4.2 Non-alloyed Semiconductor; 1.4.3 Semiconductor Alloy; (a) Group-IV semiconductor; (b) III-V semiconductor; (c) II-VI semiconductor; 1.5 COHERENT EPITAXY AND STRAIN PROBLEM; 1.5.1 Bilayer Model; 1.5.2 Elastic Strain and Lattice Deformation; 1.5.3 Critical Thickness; 1.6 STRUCTURAL PHASE TRANSITION; 1.7 CLEAVAGE PLANE; 1.7.1 Cleavage; 1.7.2 Surface Energy; REFERENCES; 2 Thermal Properties; 2.1 MELTING POINT AND RELATED PARAMETERS; 2.1.1 Phase Diagram; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy
(c) II-VI semiconductor alloy2.1.2 Melting Point; 2.2 SPECIFIC HEAT; 2.2.1 Group-IV Semiconductor Alloy; 2.2.2 III-V Semiconductor Alloy; 2.2.3 II-VI Semiconductor Alloy; 2.3 DEBYE TEMPERATURE; 2.3.1 General Considerations; 2.3.2 Group-IV Semiconductor Alloy; 2.3.3 III-V Semiconductor Alloy; 2.3.4 II-VI Semiconductor Alloy; 2.4 THERMAL EXPANSION COEFFICIENT; 2.4.1 Group-IV Semiconductor Alloy; 2.4.2 III-V Semiconductor Alloy; 2.4.3 II-VI Semiconductor Alloy; 2.5 THERMAL CONDUCTIVITY AND DIFFUSIVITY; 2.5.1 Thermal Conductivity; (a) General considerations; (b) Group-IV semiconductor alloy
(c) III-V semiconductor alloy(d) II-VI semiconductor alloy; 2.5.2 Thermal Diffusivity; (a) General considerations; (b) Alloy value; REFERENCES; 3 Elastic Properties; 3.1 ELASTIC CONSTANT; 3.1.1 General Considerations; 3.1.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 THIRD-ORDER ELASTIC CONSTANT; 3.3 YOUNG'S MODULUS, POISSON'S RATIO AND SIMILAR PROPERTIES; 3.3.1 Group-IV Semiconductor Alloy; 3.3.2 III-V Semiconductor Alloy
3.3.3 II-VI Semiconductor Alloy3.4 MICROHARDNESS; 3.4.1 Group-IV Semiconductor Alloy; 3.4.2 III-V Semiconductor Alloy; 3.4.3 II-VI Semiconductor Alloy; 3.5 SOUND VELOCITY; REFERENCES; 4 Lattice Dynamic Properties; 4.1 PHONON DISPERSION RELATIONSHIPS; 4.2 PHONON FREQUENCY; 4.2.1 General Considerations; 4.2.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.2.3 External Perturbation Effect; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.3 MODE GRÜNEISEN PARAMETER
4.3.1 Phonon Deformation Potential
Record Nr. UNINA-9910146134903321
Adachi Sadao <1950->  
Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Properties of semiconductor alloys [[electronic resource] ] : group-IV, III-V and II-VI semiconductors / / Sadao Adachi
Properties of semiconductor alloys [[electronic resource] ] : group-IV, III-V and II-VI semiconductors / / Sadao Adachi
Autore Adachi Sadao <1950->
Pubbl/distr/stampa Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009
Descrizione fisica 1 online resource (424 p.)
Disciplina 621.3815/2
Collana Wiley series in materials for electronic & optoelectronic applications
Soggetto topico Semiconductors - Materials
Semiconductors - Analysis
Silicon alloys
ISBN 1-282-12352-1
9786612123528
0-470-74438-3
0-470-74439-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Abbreviations and Acronyms; Introductory Remarks; A.1 AN ALLOY AND A COMPOUND; A.2 GRIMM-SOMMERFELD RULE; A.3 AN INTERPOLATION SCHEME; REFERENCES; 1 Structural Properties; 1.1 IONICITY; 1.2 ELEMENTAL ISOTOPIC ABUNDANCE AND MOLECULAR WEIGHT; 1.3 CRYSTAL STRUCTURE; 1.3.1 Random Alloy; 1.3.2 Spontaneous Ordering; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 1.4 LATTICE CONSTANT AND RELATED PARAMETERS
1.4.1 CuAu Alloy: Ordered and Disordered States1.4.2 Non-alloyed Semiconductor; 1.4.3 Semiconductor Alloy; (a) Group-IV semiconductor; (b) III-V semiconductor; (c) II-VI semiconductor; 1.5 COHERENT EPITAXY AND STRAIN PROBLEM; 1.5.1 Bilayer Model; 1.5.2 Elastic Strain and Lattice Deformation; 1.5.3 Critical Thickness; 1.6 STRUCTURAL PHASE TRANSITION; 1.7 CLEAVAGE PLANE; 1.7.1 Cleavage; 1.7.2 Surface Energy; REFERENCES; 2 Thermal Properties; 2.1 MELTING POINT AND RELATED PARAMETERS; 2.1.1 Phase Diagram; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy
(c) II-VI semiconductor alloy2.1.2 Melting Point; 2.2 SPECIFIC HEAT; 2.2.1 Group-IV Semiconductor Alloy; 2.2.2 III-V Semiconductor Alloy; 2.2.3 II-VI Semiconductor Alloy; 2.3 DEBYE TEMPERATURE; 2.3.1 General Considerations; 2.3.2 Group-IV Semiconductor Alloy; 2.3.3 III-V Semiconductor Alloy; 2.3.4 II-VI Semiconductor Alloy; 2.4 THERMAL EXPANSION COEFFICIENT; 2.4.1 Group-IV Semiconductor Alloy; 2.4.2 III-V Semiconductor Alloy; 2.4.3 II-VI Semiconductor Alloy; 2.5 THERMAL CONDUCTIVITY AND DIFFUSIVITY; 2.5.1 Thermal Conductivity; (a) General considerations; (b) Group-IV semiconductor alloy
(c) III-V semiconductor alloy(d) II-VI semiconductor alloy; 2.5.2 Thermal Diffusivity; (a) General considerations; (b) Alloy value; REFERENCES; 3 Elastic Properties; 3.1 ELASTIC CONSTANT; 3.1.1 General Considerations; 3.1.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 THIRD-ORDER ELASTIC CONSTANT; 3.3 YOUNG'S MODULUS, POISSON'S RATIO AND SIMILAR PROPERTIES; 3.3.1 Group-IV Semiconductor Alloy; 3.3.2 III-V Semiconductor Alloy
3.3.3 II-VI Semiconductor Alloy3.4 MICROHARDNESS; 3.4.1 Group-IV Semiconductor Alloy; 3.4.2 III-V Semiconductor Alloy; 3.4.3 II-VI Semiconductor Alloy; 3.5 SOUND VELOCITY; REFERENCES; 4 Lattice Dynamic Properties; 4.1 PHONON DISPERSION RELATIONSHIPS; 4.2 PHONON FREQUENCY; 4.2.1 General Considerations; 4.2.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.2.3 External Perturbation Effect; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.3 MODE GRÜNEISEN PARAMETER
4.3.1 Phonon Deformation Potential
Record Nr. UNINA-9910830624003321
Adachi Sadao <1950->  
Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Properties of semiconductor alloys : group-IV, III-V and II-VI semiconductors / / Sadao Adachi
Properties of semiconductor alloys : group-IV, III-V and II-VI semiconductors / / Sadao Adachi
Autore Adachi Sadao <1950->
Pubbl/distr/stampa Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009
Descrizione fisica 1 online resource (424 p.)
Disciplina 621.3815/2
Collana Wiley series in materials for electronic & optoelectronic applications
Soggetto topico Semiconductors - Materials
Semiconductors - Analysis
Silicon alloys
ISBN 1-282-12352-1
9786612123528
0-470-74438-3
0-470-74439-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Abbreviations and Acronyms; Introductory Remarks; A.1 AN ALLOY AND A COMPOUND; A.2 GRIMM-SOMMERFELD RULE; A.3 AN INTERPOLATION SCHEME; REFERENCES; 1 Structural Properties; 1.1 IONICITY; 1.2 ELEMENTAL ISOTOPIC ABUNDANCE AND MOLECULAR WEIGHT; 1.3 CRYSTAL STRUCTURE; 1.3.1 Random Alloy; 1.3.2 Spontaneous Ordering; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 1.4 LATTICE CONSTANT AND RELATED PARAMETERS
1.4.1 CuAu Alloy: Ordered and Disordered States1.4.2 Non-alloyed Semiconductor; 1.4.3 Semiconductor Alloy; (a) Group-IV semiconductor; (b) III-V semiconductor; (c) II-VI semiconductor; 1.5 COHERENT EPITAXY AND STRAIN PROBLEM; 1.5.1 Bilayer Model; 1.5.2 Elastic Strain and Lattice Deformation; 1.5.3 Critical Thickness; 1.6 STRUCTURAL PHASE TRANSITION; 1.7 CLEAVAGE PLANE; 1.7.1 Cleavage; 1.7.2 Surface Energy; REFERENCES; 2 Thermal Properties; 2.1 MELTING POINT AND RELATED PARAMETERS; 2.1.1 Phase Diagram; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy
(c) II-VI semiconductor alloy2.1.2 Melting Point; 2.2 SPECIFIC HEAT; 2.2.1 Group-IV Semiconductor Alloy; 2.2.2 III-V Semiconductor Alloy; 2.2.3 II-VI Semiconductor Alloy; 2.3 DEBYE TEMPERATURE; 2.3.1 General Considerations; 2.3.2 Group-IV Semiconductor Alloy; 2.3.3 III-V Semiconductor Alloy; 2.3.4 II-VI Semiconductor Alloy; 2.4 THERMAL EXPANSION COEFFICIENT; 2.4.1 Group-IV Semiconductor Alloy; 2.4.2 III-V Semiconductor Alloy; 2.4.3 II-VI Semiconductor Alloy; 2.5 THERMAL CONDUCTIVITY AND DIFFUSIVITY; 2.5.1 Thermal Conductivity; (a) General considerations; (b) Group-IV semiconductor alloy
(c) III-V semiconductor alloy(d) II-VI semiconductor alloy; 2.5.2 Thermal Diffusivity; (a) General considerations; (b) Alloy value; REFERENCES; 3 Elastic Properties; 3.1 ELASTIC CONSTANT; 3.1.1 General Considerations; 3.1.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 THIRD-ORDER ELASTIC CONSTANT; 3.3 YOUNG'S MODULUS, POISSON'S RATIO AND SIMILAR PROPERTIES; 3.3.1 Group-IV Semiconductor Alloy; 3.3.2 III-V Semiconductor Alloy
3.3.3 II-VI Semiconductor Alloy3.4 MICROHARDNESS; 3.4.1 Group-IV Semiconductor Alloy; 3.4.2 III-V Semiconductor Alloy; 3.4.3 II-VI Semiconductor Alloy; 3.5 SOUND VELOCITY; REFERENCES; 4 Lattice Dynamic Properties; 4.1 PHONON DISPERSION RELATIONSHIPS; 4.2 PHONON FREQUENCY; 4.2.1 General Considerations; 4.2.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.2.3 External Perturbation Effect; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.3 MODE GRÜNEISEN PARAMETER
4.3.1 Phonon Deformation Potential
Record Nr. UNINA-9910877439303321
Adachi Sadao <1950->  
Chichester, West Sussex, U.K. ; ; Hoboken, N.J., : Wiley, 2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Silicon-germanium heterojunction bipolar transistors for mm-wave systems : technology, modeling and circuit applications / / editors, Niccolò Rinaldi, Michael Schröter
Silicon-germanium heterojunction bipolar transistors for mm-wave systems : technology, modeling and circuit applications / / editors, Niccolò Rinaldi, Michael Schröter
Pubbl/distr/stampa Gistrup, Denmark ; ; Delft, Netherlands : , : River Publishers, , [2018]
Descrizione fisica 1 online resource (378 pages)
Disciplina 621.381528
Collana River Publishers Series in Electronic Materials and Devices
Soggetto topico Bipolar transistors
Silicon alloys
Soggetto genere / forma Electronic books.
ISBN 87-93519-60-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910480906203321
Gistrup, Denmark ; ; Delft, Netherlands : , : River Publishers, , [2018]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Silicon-germanium heterojunction bipolar transistors for mm-wave systems : technology, modeling and circuit applications / / Niccolò Rinaldi and Niccolò Rinaldi, editors
Silicon-germanium heterojunction bipolar transistors for mm-wave systems : technology, modeling and circuit applications / / Niccolò Rinaldi and Niccolò Rinaldi, editors
Edizione [1st ed.]
Pubbl/distr/stampa Gistrup, Denmark : , : River Publishers, , [2018]
Descrizione fisica 1 online resource (378 pages)
Disciplina 621.381528
Collana River Publishers Series in Electronic Materials and Devices
Soggetto topico Bipolar transistors
Digital communications
Silicon alloys
ISBN 1-00-333951-4
1-000-79128-9
1-003-33951-4
1-000-79440-7
87-93519-60-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910632998403321
Gistrup, Denmark : , : River Publishers, , [2018]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Some observations concerning the oxidation of the cobalt-base superalloy L-605 (HS-25) / / by James S. Wolf and Gary D. Sandrock
Some observations concerning the oxidation of the cobalt-base superalloy L-605 (HS-25) / / by James S. Wolf and Gary D. Sandrock
Autore Wolf James S.
Pubbl/distr/stampa Washington, D.C. : , : National Aeronautics and Space Administration, , August 1968
Descrizione fisica 1 online resource (ii, 37 pages) : illustrations
Collana NASA/TN
Soggetto topico Oxidation
Heat resistant alloys
Manganese alloys
Silicon alloys
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Some observations concerning the oxidation of the cobalt-base superalloy L-605
Record Nr. UNINA-9910715976603321
Wolf James S.  
Washington, D.C. : , : National Aeronautics and Space Administration, , August 1968
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui