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Atomic layer processing : semiconductor dry etching technology / / Thorsten Lill
Atomic layer processing : semiconductor dry etching technology / / Thorsten Lill
Autore Lill Thorsten
Pubbl/distr/stampa Weinheim, Germany : , : Wiley-VCH GmbH, , [2021]
Descrizione fisica 1 online resource (301 pages)
Disciplina 621.38152
Soggetto topico Semiconductors - Etching
Soggetto genere / forma Electronic books.
ISBN 3-527-82419-7
3-527-82420-0
3-527-82418-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover -- Title Page -- Copyright -- Contents -- List of Abbreviations -- Chapter 1 Introduction -- References -- Chapter 2 Fundamentals -- 2.1 Important Performance Metrics of Etching Processes -- 2.1.1 Etching Rate (ER) -- 2.1.2 Etching Rate Nonuniformity (ERNU) -- 2.1.3 Selectivity -- 2.1.4 Profile -- 2.1.5 Critical Dimension (CD) -- 2.1.6 Line Width and Edge Roughness (LWR and LER) -- 2.1.7 Edge Placement Error (EPE) -- 2.1.8 Aspect Ratio‐Dependent Etching (ARDE) -- 2.2 Physisorption and Chemisorption -- 2.3 Desorption -- 2.4 Surface Reactions -- 2.5 Sputtering -- 2.6 Implantation -- 2.7 Diffusion -- 2.8 Transport Phenomena in 3D Features -- 2.8.1 Neutral Transport -- 2.8.2 Ion Transport -- 2.8.3 Transport of Reaction Products -- 2.9 Classification of Etching Technologies -- Problems -- References -- Chapter 3 Thermal Etching -- 3.1 Mechanism and Performance Metrics of Thermal Etching -- 3.1.1 Etching Rate and ERNU -- 3.1.2 Selectivity -- 3.1.3 Profile and CD Control -- 3.1.4 ARDE -- 3.2 Applications Examples -- Problems -- References -- Chapter 4 Thermal Isotropic ALE -- 4.1 Mechanism of Thermal Isotropic ALE -- 4.1.1 Chelation/Condensation ALE -- 4.1.2 Ligand Exchange ALE -- 4.1.3 Conversion ALE -- 4.1.4 Oxidation/Fluorination ALE -- 4.2 Performance Metrics -- 4.2.1 Etching Rate (EPC) -- 4.2.2 ERNU (EPC Nonuniformity) -- 4.2.3 Selectivity -- 4.2.4 Profile and ARDE -- 4.2.5 CD Control -- 4.2.6 Surface Smoothness -- 4.3 Plasma‐Assisted Thermal Isotropic ALE -- 4.4 Applications Examples -- 4.4.1 Area‐Selective Deposition -- 4.4.2 Formation of Lateral Devices -- Problems -- References -- Chapter 5 Radical Etching -- 5.1 Mechanism of Radical Etching -- 5.2 Performance Metrics -- 5.2.1 Etching Rate and ERNU -- 5.2.2 Selectivity -- 5.2.3 Profile and ARDE -- 5.2.4 CD Control -- 5.3 Applications Examples -- Problems -- References.
Chapter 6 Directional ALE -- 6.1 Mechanism of Directional ALE -- 6.1.1 ALE with Directional Modification Step -- 6.1.2 ALE with Directional Removal Step and Modification by Chemisorption and Diffusion -- 6.1.3 ALE with Directional Removal Step and Modification by Reactive Layer Deposition -- 6.2 Performance Metrics -- 6.2.1 Etching Rate (EPC) -- 6.2.2 ERNU (EPC Nonuniformity) -- 6.2.3 Selectivity -- 6.2.4 Profile and ARDE -- 6.2.5 Surface Smoothness and LWR/LER -- 6.3 Applications Examples -- 6.3.1 ALE with Directional Modification Step -- 6.3.2 ALE with Directional Removal Step and Modification by Chemisorption and Diffusion -- 6.3.3 ALE with Directional Removal Step and Modification by Reactive Layer Deposition -- Problems -- References -- Chapter 7 Reactive Ion Etching -- 7.1 Reactive Ion Etching Mechanisms -- 7.1.1 Simultaneous Species Fluxes -- 7.1.2 Chemical Sputtering -- 7.1.3 Mixed Layer Formation -- 7.1.4 Role of Etching Products -- 7.2 Performance Metrics -- 7.2.1 Etching Rate -- 7.2.2 ERNU -- 7.2.3 ARDE -- 7.2.4 Selectivity -- 7.2.5 Profile Control -- 7.2.5.1 Sidewall Passivation -- 7.2.5.2 Selection of Etching Species -- 7.2.5.3 Temperature -- 7.2.6 CD Control -- 7.2.7 Surface Smoothness -- 7.2.8 LWR/LER -- 7.3 Applications Examples -- 7.3.1 Patterning -- 7.3.1.1 Self‐aligned Patterning -- 7.3.1.2 Extreme Ultraviolet (EUV) Lithography -- 7.3.2 Logic Devices -- 7.3.2.1 Fin Etch -- 7.3.2.2 Gate Etch -- 7.3.2.3 Spacer Etch -- 7.3.2.4 Contact Etch -- 7.3.2.5 BEOL Etch -- 7.3.3 DRAM and 3D NAND Memory -- 7.3.3.1 DRAM Capacitor Cell Etch -- 7.3.3.2 High Aspect Ratio 3D NAND Etch -- 7.3.4 Emerging Memories -- 7.3.4.1 Phase Change Memory (PCM) -- 7.3.4.2 ReRAM -- Problems -- References -- Chapter 8 Ion Beam Etching -- 8.1 Mechanism and Performance Metrics of Ion Beam Etching -- 8.2 Applications Examples -- Problems -- References.
Chapter 9 Etching Species Generation -- 9.1 Introduction of Low‐Temperature Plasmas -- 9.2 Capacitively Coupled Plasmas -- 9.3 Inductively Coupled Plasmas -- 9.4 Ion Energy Distribution Modulation -- 9.5 Plasma Pulsing -- 9.6 Grid Sources -- Problems -- References -- Chapter 10 Emerging Etching Technologies -- 10.1 Electron‐Assisted Chemical Etching -- 10.2 Photon‐Assisted Chemical Etching -- Problems -- References -- Index -- EULA.
Record Nr. UNINA-9910586084803321
Lill Thorsten  
Weinheim, Germany : , : Wiley-VCH GmbH, , [2021]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Atomic layer processing : semiconductor dry etching technology / / Thorsten Lill
Atomic layer processing : semiconductor dry etching technology / / Thorsten Lill
Autore Lill Thorsten
Pubbl/distr/stampa Weinheim, Germany : , : Wiley-VCH GmbH, , [2021]
Descrizione fisica 1 online resource (301 pages)
Disciplina 621.38152
Soggetto topico Semiconductors - Etching
ISBN 3-527-82419-7
3-527-82420-0
3-527-82418-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover -- Title Page -- Copyright -- Contents -- List of Abbreviations -- Chapter 1 Introduction -- References -- Chapter 2 Fundamentals -- 2.1 Important Performance Metrics of Etching Processes -- 2.1.1 Etching Rate (ER) -- 2.1.2 Etching Rate Nonuniformity (ERNU) -- 2.1.3 Selectivity -- 2.1.4 Profile -- 2.1.5 Critical Dimension (CD) -- 2.1.6 Line Width and Edge Roughness (LWR and LER) -- 2.1.7 Edge Placement Error (EPE) -- 2.1.8 Aspect Ratio‐Dependent Etching (ARDE) -- 2.2 Physisorption and Chemisorption -- 2.3 Desorption -- 2.4 Surface Reactions -- 2.5 Sputtering -- 2.6 Implantation -- 2.7 Diffusion -- 2.8 Transport Phenomena in 3D Features -- 2.8.1 Neutral Transport -- 2.8.2 Ion Transport -- 2.8.3 Transport of Reaction Products -- 2.9 Classification of Etching Technologies -- Problems -- References -- Chapter 3 Thermal Etching -- 3.1 Mechanism and Performance Metrics of Thermal Etching -- 3.1.1 Etching Rate and ERNU -- 3.1.2 Selectivity -- 3.1.3 Profile and CD Control -- 3.1.4 ARDE -- 3.2 Applications Examples -- Problems -- References -- Chapter 4 Thermal Isotropic ALE -- 4.1 Mechanism of Thermal Isotropic ALE -- 4.1.1 Chelation/Condensation ALE -- 4.1.2 Ligand Exchange ALE -- 4.1.3 Conversion ALE -- 4.1.4 Oxidation/Fluorination ALE -- 4.2 Performance Metrics -- 4.2.1 Etching Rate (EPC) -- 4.2.2 ERNU (EPC Nonuniformity) -- 4.2.3 Selectivity -- 4.2.4 Profile and ARDE -- 4.2.5 CD Control -- 4.2.6 Surface Smoothness -- 4.3 Plasma‐Assisted Thermal Isotropic ALE -- 4.4 Applications Examples -- 4.4.1 Area‐Selective Deposition -- 4.4.2 Formation of Lateral Devices -- Problems -- References -- Chapter 5 Radical Etching -- 5.1 Mechanism of Radical Etching -- 5.2 Performance Metrics -- 5.2.1 Etching Rate and ERNU -- 5.2.2 Selectivity -- 5.2.3 Profile and ARDE -- 5.2.4 CD Control -- 5.3 Applications Examples -- Problems -- References.
Chapter 6 Directional ALE -- 6.1 Mechanism of Directional ALE -- 6.1.1 ALE with Directional Modification Step -- 6.1.2 ALE with Directional Removal Step and Modification by Chemisorption and Diffusion -- 6.1.3 ALE with Directional Removal Step and Modification by Reactive Layer Deposition -- 6.2 Performance Metrics -- 6.2.1 Etching Rate (EPC) -- 6.2.2 ERNU (EPC Nonuniformity) -- 6.2.3 Selectivity -- 6.2.4 Profile and ARDE -- 6.2.5 Surface Smoothness and LWR/LER -- 6.3 Applications Examples -- 6.3.1 ALE with Directional Modification Step -- 6.3.2 ALE with Directional Removal Step and Modification by Chemisorption and Diffusion -- 6.3.3 ALE with Directional Removal Step and Modification by Reactive Layer Deposition -- Problems -- References -- Chapter 7 Reactive Ion Etching -- 7.1 Reactive Ion Etching Mechanisms -- 7.1.1 Simultaneous Species Fluxes -- 7.1.2 Chemical Sputtering -- 7.1.3 Mixed Layer Formation -- 7.1.4 Role of Etching Products -- 7.2 Performance Metrics -- 7.2.1 Etching Rate -- 7.2.2 ERNU -- 7.2.3 ARDE -- 7.2.4 Selectivity -- 7.2.5 Profile Control -- 7.2.5.1 Sidewall Passivation -- 7.2.5.2 Selection of Etching Species -- 7.2.5.3 Temperature -- 7.2.6 CD Control -- 7.2.7 Surface Smoothness -- 7.2.8 LWR/LER -- 7.3 Applications Examples -- 7.3.1 Patterning -- 7.3.1.1 Self‐aligned Patterning -- 7.3.1.2 Extreme Ultraviolet (EUV) Lithography -- 7.3.2 Logic Devices -- 7.3.2.1 Fin Etch -- 7.3.2.2 Gate Etch -- 7.3.2.3 Spacer Etch -- 7.3.2.4 Contact Etch -- 7.3.2.5 BEOL Etch -- 7.3.3 DRAM and 3D NAND Memory -- 7.3.3.1 DRAM Capacitor Cell Etch -- 7.3.3.2 High Aspect Ratio 3D NAND Etch -- 7.3.4 Emerging Memories -- 7.3.4.1 Phase Change Memory (PCM) -- 7.3.4.2 ReRAM -- Problems -- References -- Chapter 8 Ion Beam Etching -- 8.1 Mechanism and Performance Metrics of Ion Beam Etching -- 8.2 Applications Examples -- Problems -- References.
Chapter 9 Etching Species Generation -- 9.1 Introduction of Low‐Temperature Plasmas -- 9.2 Capacitively Coupled Plasmas -- 9.3 Inductively Coupled Plasmas -- 9.4 Ion Energy Distribution Modulation -- 9.5 Plasma Pulsing -- 9.6 Grid Sources -- Problems -- References -- Chapter 10 Emerging Etching Technologies -- 10.1 Electron‐Assisted Chemical Etching -- 10.2 Photon‐Assisted Chemical Etching -- Problems -- References -- Index -- EULA.
Record Nr. UNINA-9910830463403321
Lill Thorsten  
Weinheim, Germany : , : Wiley-VCH GmbH, , [2021]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Plasma processing and processing science [[electronic resource] /] / Panel on Plasma Processing, Naval Studies Board, Commission on Physical Sciences, Mathematics, and Applications, National Research Council
Plasma processing and processing science [[electronic resource] /] / Panel on Plasma Processing, Naval Studies Board, Commission on Physical Sciences, Mathematics, and Applications, National Research Council
Pubbl/distr/stampa Washington, D.C., : National Academy Press, 1995
Descrizione fisica 1 online resource (45 p.)
Disciplina 621.044
Altri autori (Persone) ChenFrancis F. <1929->
Collana NRL strategic series
Soggetto topico Plasma engineering
Semiconductors - Etching
Plasma etching
Soggetto genere / forma Electronic books.
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto ""Plasma Processing and Processing Science""; ""Copyright""; ""Preface""; ""Contents""; ""Chapter 1 Introduction and Summary""; ""Chapter 2 Modeling and Simulation of Plasma Processing""; ""RESEARCH OPPORTUNITIES""; ""Requirements of the Microelectronics Fabrication Industry""; ""Multidimensional Models""; ""Plasma Chemistry""; ""Surface Chemistry""; ""Electromagnetics""; ""Current Status of Modeling and Simulation""; ""Particle-in-Cell Simulations""; ""Kinetic Models""; ""Fluid or Hydrodynamic Models""; ""Hybrid Models""; ""A ROLE FOR NRL""; ""Chapter 3 Semiconductor Processing""
""RESEARCH OPPORTUNITIES""""A ROLE FOR NRL""; ""Development and Characterization of Precompetitive Materials and Processes""; ""Comparative Analysis and Characterization of Tools and Processes in Development""; ""Sensor Development for Control and Fingerprinting of Manufacturing Processes""; ""Chapter 4 Plasma Deposition and Polymerization""; ""RESEARCH OPPORTUNITIES""; ""Semiconductor Fabrication""; ""Barrier Coatings""; ""Fibrous Materials""; ""Optical Coatings and Photonics""; ""Plasma Polymerization""; ""A ROLE FOR NRL""; ""Chapter 5 Ion Implantation and Surface Modification""
""RESEARCH OPPORTUNITIES""""Introduction""; ""Plasma and Ion Beam Implantation Technology""; ""Ion Beam Implantation""; ""Plasma Source Ion Implantation""; ""Applications""; ""Implantation of Metals""; ""Implantation of Nonmetals""; ""A ROLE FOR NRL""; ""Chapter 6 Thermal Plasmas""; ""RESEARCH OPPORTUNITIES""; ""Introduction""; ""Plasma Spraying""; ""Plasma Chemical Vapor Deposition""; ""Plasma Waste Destruction""; ""Plasma Metallurgy""; ""Thermal Plasma Synthesis""; ""Plasma Consolidation""; ""A ROLE FOR NRL""; ""Thermal Plasma Waste Destruction""; ""Plasma Chemical Vapor Deposition""
""Diamond Films""""Cubic Boron Nitride Films""; ""Carbon Nitride""; ""Chapter 7 Flat Panel Displays""; ""RESEARCH OPPORTUNITIES""; ""Introduction""; ""Passive Matrix Liquid Crystal Display""; ""Active Matrix Liquid Crystal Display""; ""Amorphous Silicon""; ""Polycrystalline Silicon""; ""Transfer Silicon""; ""Thin Film Electroluminescent Displays""; ""Digital Micromirror Devices""; ""Plasma Displays""; ""Field Emission Displays""; ""A ROLE FOR NRL""; ""Chapter 8 Low-Temperature Plasma Physics""; ""RESEARCH OPPORTUNITIES""; ""A ROLE FOR NRL""; ""Chapter 9 Conclusions and Recommendations""
""RECOMMENDATION FOR A PROGRAM IN PLASMA PROCESSING AND PROCESSING SCIENCE""""CONCLUSIONS BASED ON NRL'S PRESENT RESEARCH CAPABILITIES""
Record Nr. UNINA-9910451786303321
Washington, D.C., : National Academy Press, 1995
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Plasma processing and processing science [[electronic resource] /] / Panel on Plasma Processing, Naval Studies Board, Commission on Physical Sciences, Mathematics, and Applications, National Research Council
Plasma processing and processing science [[electronic resource] /] / Panel on Plasma Processing, Naval Studies Board, Commission on Physical Sciences, Mathematics, and Applications, National Research Council
Pubbl/distr/stampa Washington, D.C., : National Academy Press, 1995
Descrizione fisica 1 online resource (45 p.)
Disciplina 621.044
Altri autori (Persone) ChenFrancis F. <1929->
Collana NRL strategic series
Soggetto topico Plasma engineering
Semiconductors - Etching
Plasma etching
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto ""Plasma Processing and Processing Science""; ""Copyright""; ""Preface""; ""Contents""; ""Chapter 1 Introduction and Summary""; ""Chapter 2 Modeling and Simulation of Plasma Processing""; ""RESEARCH OPPORTUNITIES""; ""Requirements of the Microelectronics Fabrication Industry""; ""Multidimensional Models""; ""Plasma Chemistry""; ""Surface Chemistry""; ""Electromagnetics""; ""Current Status of Modeling and Simulation""; ""Particle-in-Cell Simulations""; ""Kinetic Models""; ""Fluid or Hydrodynamic Models""; ""Hybrid Models""; ""A ROLE FOR NRL""; ""Chapter 3 Semiconductor Processing""
""RESEARCH OPPORTUNITIES""""A ROLE FOR NRL""; ""Development and Characterization of Precompetitive Materials and Processes""; ""Comparative Analysis and Characterization of Tools and Processes in Development""; ""Sensor Development for Control and Fingerprinting of Manufacturing Processes""; ""Chapter 4 Plasma Deposition and Polymerization""; ""RESEARCH OPPORTUNITIES""; ""Semiconductor Fabrication""; ""Barrier Coatings""; ""Fibrous Materials""; ""Optical Coatings and Photonics""; ""Plasma Polymerization""; ""A ROLE FOR NRL""; ""Chapter 5 Ion Implantation and Surface Modification""
""RESEARCH OPPORTUNITIES""""Introduction""; ""Plasma and Ion Beam Implantation Technology""; ""Ion Beam Implantation""; ""Plasma Source Ion Implantation""; ""Applications""; ""Implantation of Metals""; ""Implantation of Nonmetals""; ""A ROLE FOR NRL""; ""Chapter 6 Thermal Plasmas""; ""RESEARCH OPPORTUNITIES""; ""Introduction""; ""Plasma Spraying""; ""Plasma Chemical Vapor Deposition""; ""Plasma Waste Destruction""; ""Plasma Metallurgy""; ""Thermal Plasma Synthesis""; ""Plasma Consolidation""; ""A ROLE FOR NRL""; ""Thermal Plasma Waste Destruction""; ""Plasma Chemical Vapor Deposition""
""Diamond Films""""Cubic Boron Nitride Films""; ""Carbon Nitride""; ""Chapter 7 Flat Panel Displays""; ""RESEARCH OPPORTUNITIES""; ""Introduction""; ""Passive Matrix Liquid Crystal Display""; ""Active Matrix Liquid Crystal Display""; ""Amorphous Silicon""; ""Polycrystalline Silicon""; ""Transfer Silicon""; ""Thin Film Electroluminescent Displays""; ""Digital Micromirror Devices""; ""Plasma Displays""; ""Field Emission Displays""; ""A ROLE FOR NRL""; ""Chapter 8 Low-Temperature Plasma Physics""; ""RESEARCH OPPORTUNITIES""; ""A ROLE FOR NRL""; ""Chapter 9 Conclusions and Recommendations""
""RECOMMENDATION FOR A PROGRAM IN PLASMA PROCESSING AND PROCESSING SCIENCE""""CONCLUSIONS BASED ON NRL'S PRESENT RESEARCH CAPABILITIES""
Record Nr. UNINA-9910777418303321
Washington, D.C., : National Academy Press, 1995
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Plasma processing and processing science [[electronic resource] /] / Panel on Plasma Processing, Naval Studies Board, Commission on Physical Sciences, Mathematics, and Applications, National Research Council
Plasma processing and processing science [[electronic resource] /] / Panel on Plasma Processing, Naval Studies Board, Commission on Physical Sciences, Mathematics, and Applications, National Research Council
Pubbl/distr/stampa Washington, D.C., : National Academy Press, 1995
Descrizione fisica 1 online resource (45 p.)
Disciplina 621.044
Altri autori (Persone) ChenFrancis F. <1929->
Collana NRL strategic series
Soggetto topico Plasma engineering
Semiconductors - Etching
Plasma etching
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto ""Plasma Processing and Processing Science""; ""Copyright""; ""Preface""; ""Contents""; ""Chapter 1 Introduction and Summary""; ""Chapter 2 Modeling and Simulation of Plasma Processing""; ""RESEARCH OPPORTUNITIES""; ""Requirements of the Microelectronics Fabrication Industry""; ""Multidimensional Models""; ""Plasma Chemistry""; ""Surface Chemistry""; ""Electromagnetics""; ""Current Status of Modeling and Simulation""; ""Particle-in-Cell Simulations""; ""Kinetic Models""; ""Fluid or Hydrodynamic Models""; ""Hybrid Models""; ""A ROLE FOR NRL""; ""Chapter 3 Semiconductor Processing""
""RESEARCH OPPORTUNITIES""""A ROLE FOR NRL""; ""Development and Characterization of Precompetitive Materials and Processes""; ""Comparative Analysis and Characterization of Tools and Processes in Development""; ""Sensor Development for Control and Fingerprinting of Manufacturing Processes""; ""Chapter 4 Plasma Deposition and Polymerization""; ""RESEARCH OPPORTUNITIES""; ""Semiconductor Fabrication""; ""Barrier Coatings""; ""Fibrous Materials""; ""Optical Coatings and Photonics""; ""Plasma Polymerization""; ""A ROLE FOR NRL""; ""Chapter 5 Ion Implantation and Surface Modification""
""RESEARCH OPPORTUNITIES""""Introduction""; ""Plasma and Ion Beam Implantation Technology""; ""Ion Beam Implantation""; ""Plasma Source Ion Implantation""; ""Applications""; ""Implantation of Metals""; ""Implantation of Nonmetals""; ""A ROLE FOR NRL""; ""Chapter 6 Thermal Plasmas""; ""RESEARCH OPPORTUNITIES""; ""Introduction""; ""Plasma Spraying""; ""Plasma Chemical Vapor Deposition""; ""Plasma Waste Destruction""; ""Plasma Metallurgy""; ""Thermal Plasma Synthesis""; ""Plasma Consolidation""; ""A ROLE FOR NRL""; ""Thermal Plasma Waste Destruction""; ""Plasma Chemical Vapor Deposition""
""Diamond Films""""Cubic Boron Nitride Films""; ""Carbon Nitride""; ""Chapter 7 Flat Panel Displays""; ""RESEARCH OPPORTUNITIES""; ""Introduction""; ""Passive Matrix Liquid Crystal Display""; ""Active Matrix Liquid Crystal Display""; ""Amorphous Silicon""; ""Polycrystalline Silicon""; ""Transfer Silicon""; ""Thin Film Electroluminescent Displays""; ""Digital Micromirror Devices""; ""Plasma Displays""; ""Field Emission Displays""; ""A ROLE FOR NRL""; ""Chapter 8 Low-Temperature Plasma Physics""; ""RESEARCH OPPORTUNITIES""; ""A ROLE FOR NRL""; ""Chapter 9 Conclusions and Recommendations""
""RECOMMENDATION FOR A PROGRAM IN PLASMA PROCESSING AND PROCESSING SCIENCE""""CONCLUSIONS BASED ON NRL'S PRESENT RESEARCH CAPABILITIES""
Record Nr. UNINA-9910828377903321
Washington, D.C., : National Academy Press, 1995
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
A study on reactive ion etching of barium strontium titanate films using mixtures of argon (Ar), carbon tetrafluoride (CF4), and sulfur hexafluoride (SF6) / / Samuel G. Hirsch [and four others]
A study on reactive ion etching of barium strontium titanate films using mixtures of argon (Ar), carbon tetrafluoride (CF4), and sulfur hexafluoride (SF6) / / Samuel G. Hirsch [and four others]
Autore Hirsch Samuel G.
Pubbl/distr/stampa Aberdeen Proving Ground, MD : , : Army Research Laboratory, , July 2014
Descrizione fisica 1 online resource (iv, 7 pages) : illustrations
Collana ARL-TR
Soggetto topico Semiconductors - Etching
Varactors
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Study on reactive ion etching of barium strontium titanate films using mixtures of argon
Record Nr. UNINA-9910698628803321
Hirsch Samuel G.  
Aberdeen Proving Ground, MD : , : Army Research Laboratory, , July 2014
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui