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Fractional kinetics in solids [[electronic resource] ] : anomalous charge transport in semiconductors, dielectrics, and nanosystems / / Vladimir Uchaikin, Ulyanovsk State University, Russia, Renat Sibatov, Ulyanovsk State University, Russia
| Fractional kinetics in solids [[electronic resource] ] : anomalous charge transport in semiconductors, dielectrics, and nanosystems / / Vladimir Uchaikin, Ulyanovsk State University, Russia, Renat Sibatov, Ulyanovsk State University, Russia |
| Autore | Uchaĭkin V. V (Vladimir Vasilʹevich) |
| Pubbl/distr/stampa | Singapore, : World Scientific, 2013 |
| Descrizione fisica | 1 online resource (274 p.) |
| Disciplina |
530.4/16
530.416 531.3 |
| Altri autori (Persone) | SibatovRenat |
| Soggetto topico |
Solid state physics - Mathematics
Electric discharges - Mathematical models Fractional calculus Semiconductors - Electric properties Electron transport - Mathematical models Chemical kinetics - Mathematics |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-283-89998-1
981-4355-43-7 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; Preface; 1. Statistical grounds; 1.1 Levy stable statistics; 1.1.1 Generalized limit theorems; 1.1.2 Two subclasses of stable distributions; 1.1.3 Fractional stable distributions; 1.1.4 Self-similar processes: Brownian motion and Levy motion; 1.1.5 Space-fractional equations; 1.2 Random flight models; 1.2.1 Continuous time random flights; 1.2.2 Counting process for number of jumps; 1.2.3 The Poisson process; 1.2.4 The Fractional Poisson process; 1.2.5 Simulation of waiting times; 1.3 Some properties of the fractional Poisson process; 1.3.1 The nth arrival time distribution
1.3.2 The fractional Poisson distribution1.3.3 Limit fractional Poisson distributions; 1.3.4 Fractional Furry process; 1.3.5 Time-fractional equation; 1.4 Random flights on a one-dimensional Levy-Lorentz gas; 1.4.1 One-dimensional Levy-Lorentz gas; 1.4.2 The flight process on the fractal gas; 1.4.3 Propagators; 1.4.4 Fractional equation for flights on fractal; 1.5 Subdiffusion; 1.5.1 Integral equations of diffusion in a medium with traps; Necessary and sufficient condition for subdiffusion; 1.5.2 Differential equations of subdiffusion; 1.5.3 Subdiffusion distribution density 1.5.4 Analysis of subdiffusion distributions1.5.5 Discussion; 2. Fractional kinetics of dispersive transport; 2.1 Macroscopic phenomenology; 2.1.1 A role of phenomenology in studying complex systems; 2.1.2 Universality of transient current curves; 2.1.3 From self-similarity to fractional derivatives; 2.1.4 From transient current to waiting time distribution; 2.2 Microscopic backgrounds of dispersive transport; 2.2.1 From the Scher-Montroll model to fractional derivatives; 2.2.2 Physical basis of the power-law waiting time distribution; 2.2.3 Multiple trapping regime 2.2.4 Hopping conductivity2.2.5 Bassler's model of Gaussian disorder; 2.3 Fractional formalism of multiple trapping; 2.3.1 Prime statements; 2.3.2 Multiple trapping regime and Arkhipov-Rudenko approach; 2.3.3 Fractional equations for delocalized carriers; 2.3.4 Fractional equation for the total concentration; 2.3.5 Two-state dynamics; 2.3.6 Delocalized carrier concentration; 2.3.7 Percolation and fractional kinetics; 2.3.8 The case of Gaussian disorder; 2.4 Some applications; 2.4.1 Dispersive diffusion; 2.4.2 Photoluminescence decay; 2.4.3 Including recombination; 2.4.4 Including generation 2.4.5 Bipolar dispersive transport2.4.6 The family of fractional dispersive transport equations; 3. Transient processes in disordered semiconductor structures; 3.1 Time-of-flight method; 3.1.1 Transient current in disordered semiconductors; 3.1.2 Transient current for truncated waiting time distributions; 3.1.3 Distributed dispersion parameter; 3.1.4 Transient current curves in case of Gaussian disorder; 3.1.5 Percolation in porous semiconductors; 3.1.6 Non-stationary radiation-induced conductivity; 3.2 Non-homogeneous distribution of traps 3.2.1 Non-uniform spatial distribution of localized states |
| Record Nr. | UNINA-9910463661503321 |
Uchaĭkin V. V (Vladimir Vasilʹevich)
|
||
| Singapore, : World Scientific, 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Fractional kinetics in solids [[electronic resource] ] : anomalous charge transport in semiconductors, dielectrics, and nanosystems / / Vladimir Uchaikin, Ulyanovsk State University, Russia, Renat Sibatov, Ulyanovsk State University, Russia
| Fractional kinetics in solids [[electronic resource] ] : anomalous charge transport in semiconductors, dielectrics, and nanosystems / / Vladimir Uchaikin, Ulyanovsk State University, Russia, Renat Sibatov, Ulyanovsk State University, Russia |
| Autore | Uchaĭkin V. V (Vladimir Vasilʹevich) |
| Pubbl/distr/stampa | Singapore, : World Scientific, 2013 |
| Descrizione fisica | 1 online resource (274 p.) |
| Disciplina |
530.4/16
530.416 531.3 |
| Altri autori (Persone) | SibatovRenat |
| Soggetto topico |
Solid state physics - Mathematics
Electric discharges - Mathematical models Fractional calculus Semiconductors - Electric properties Electron transport - Mathematical models Chemical kinetics - Mathematics |
| ISBN |
1-283-89998-1
981-4355-43-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; Preface; 1. Statistical grounds; 1.1 Levy stable statistics; 1.1.1 Generalized limit theorems; 1.1.2 Two subclasses of stable distributions; 1.1.3 Fractional stable distributions; 1.1.4 Self-similar processes: Brownian motion and Levy motion; 1.1.5 Space-fractional equations; 1.2 Random flight models; 1.2.1 Continuous time random flights; 1.2.2 Counting process for number of jumps; 1.2.3 The Poisson process; 1.2.4 The Fractional Poisson process; 1.2.5 Simulation of waiting times; 1.3 Some properties of the fractional Poisson process; 1.3.1 The nth arrival time distribution
1.3.2 The fractional Poisson distribution1.3.3 Limit fractional Poisson distributions; 1.3.4 Fractional Furry process; 1.3.5 Time-fractional equation; 1.4 Random flights on a one-dimensional Levy-Lorentz gas; 1.4.1 One-dimensional Levy-Lorentz gas; 1.4.2 The flight process on the fractal gas; 1.4.3 Propagators; 1.4.4 Fractional equation for flights on fractal; 1.5 Subdiffusion; 1.5.1 Integral equations of diffusion in a medium with traps; Necessary and sufficient condition for subdiffusion; 1.5.2 Differential equations of subdiffusion; 1.5.3 Subdiffusion distribution density 1.5.4 Analysis of subdiffusion distributions1.5.5 Discussion; 2. Fractional kinetics of dispersive transport; 2.1 Macroscopic phenomenology; 2.1.1 A role of phenomenology in studying complex systems; 2.1.2 Universality of transient current curves; 2.1.3 From self-similarity to fractional derivatives; 2.1.4 From transient current to waiting time distribution; 2.2 Microscopic backgrounds of dispersive transport; 2.2.1 From the Scher-Montroll model to fractional derivatives; 2.2.2 Physical basis of the power-law waiting time distribution; 2.2.3 Multiple trapping regime 2.2.4 Hopping conductivity2.2.5 Bassler's model of Gaussian disorder; 2.3 Fractional formalism of multiple trapping; 2.3.1 Prime statements; 2.3.2 Multiple trapping regime and Arkhipov-Rudenko approach; 2.3.3 Fractional equations for delocalized carriers; 2.3.4 Fractional equation for the total concentration; 2.3.5 Two-state dynamics; 2.3.6 Delocalized carrier concentration; 2.3.7 Percolation and fractional kinetics; 2.3.8 The case of Gaussian disorder; 2.4 Some applications; 2.4.1 Dispersive diffusion; 2.4.2 Photoluminescence decay; 2.4.3 Including recombination; 2.4.4 Including generation 2.4.5 Bipolar dispersive transport2.4.6 The family of fractional dispersive transport equations; 3. Transient processes in disordered semiconductor structures; 3.1 Time-of-flight method; 3.1.1 Transient current in disordered semiconductors; 3.1.2 Transient current for truncated waiting time distributions; 3.1.3 Distributed dispersion parameter; 3.1.4 Transient current curves in case of Gaussian disorder; 3.1.5 Percolation in porous semiconductors; 3.1.6 Non-stationary radiation-induced conductivity; 3.2 Non-homogeneous distribution of traps 3.2.1 Non-uniform spatial distribution of localized states |
| Record Nr. | UNINA-9910788622503321 |
|
Uchaĭkin V. V (Vladimir Vasilʹevich)
|
||
| Singapore, : World Scientific, 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
IEEE Std C62.35-2010/Cor 1-2018 (Corrigendum to IEEE Std C62.35-2010) IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components . Corrigendum 1 / / Surge Protective Devices/Low Voltage of the IEEE Power and Energy Society
| IEEE Std C62.35-2010/Cor 1-2018 (Corrigendum to IEEE Std C62.35-2010) IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components . Corrigendum 1 / / Surge Protective Devices/Low Voltage of the IEEE Power and Energy Society |
| Pubbl/distr/stampa | New York : , : IEEE, , 2018 |
| Descrizione fisica | 1 online resource (11 pages) |
| Disciplina | 621.3815 |
| Collana | IEEE Std |
| Soggetto topico |
Voltage regulators
Avalanche photodiodes Breakdown (Electricity) Semiconductors - Electric properties |
| ISBN | 1-5044-5314-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | IEEE Std C62.35-2010/Cor 1-2018 |
| Record Nr. | UNINA-9910296451403321 |
| New York : , : IEEE, , 2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
IEEE Std C62.35-2010/Cor 1-2018 (Corrigendum to IEEE Std C62.35-2010) IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components . Corrigendum 1 / / Surge Protective Devices/Low Voltage of the IEEE Power and Energy Society
| IEEE Std C62.35-2010/Cor 1-2018 (Corrigendum to IEEE Std C62.35-2010) IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components . Corrigendum 1 / / Surge Protective Devices/Low Voltage of the IEEE Power and Energy Society |
| Pubbl/distr/stampa | New York : , : IEEE, , 2018 |
| Descrizione fisica | 1 online resource (11 pages) |
| Disciplina | 621.3815 |
| Collana | IEEE Std |
| Soggetto topico |
Voltage regulators
Avalanche photodiodes Breakdown (Electricity) Semiconductors - Electric properties |
| ISBN | 1-5044-5314-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | IEEE Std C62.35-2010/Cor 1-2018 |
| Record Nr. | UNISA-996280055303316 |
| New York : , : IEEE, , 2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications / / Maheshwar Sharon
| An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications / / Maheshwar Sharon |
| Autore | Sharon Maheshwar |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : John Wiley & Sons |
| Descrizione fisica | 1 online resource (342 p.) |
| Disciplina | 537.6/22 |
| Soggetto topico |
Semiconductors - Electric properties
Semiconductors - Materials |
| ISBN |
1-119-27435-4
1-119-27434-6 1-119-27436-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Title Page; Copyright Page; Dedication; Contents; Foreword; Preface; 1 Our Universe and the Sun; 1.1 Formation of the Universe; 1.2 Formation of Stars; 1.2.1 Formation of Energy in the Sun; 1.2.2 Description of the Sun; 1.2.3 Transfer of Solar Rays through the Ozone Layer; 1.2.4 Transfer of Solar Layers through Other Layers; 1.2.5 Effect of Position of the Sun vis-à-vis the Earth; 1.2.6 Distribution of Solar Energy; 1.2.7 Solar Intensity Calculation; 1.3 Summary; Reference; 2 Solar Energy and Its Applications; 2.1 Introduction to a Semiconductor; 2.2 Formation of a Compound
2.2.1 A Classical Approach2.2.2 Why Call It a Band and Not a Level?; 2.2.3 Quantum Chemistry Approach; 2.2.3.1 Wave Nature of an Electron in a Fixed Potential; 2.2.3.2 Wave Nature of an Electron under a Periodically Changing Potential; 2.2.3.3 Concept of a Forbidden Gap in a Material; 2.2.4 Band Model to Explain Conductivity in Solids; 2.2.4.1 Which of the Total Electrons Will Accept the External Energy for Their Excitation?; 2.2.4.2 Density of States; 2.2.4.3 How Do We Find the Numbers of Electrons in These Bands?; 2.2.5 Useful Deductions; 2.2.5.1 Extrinsic Semiconductor 2.2.5.2 Role of Dopants in the Semiconductor2.3 Quantum Theory Approach to Explain the Effect of Doping; 2.3.1 A Mathematical Approach to Understanding This Problem; 2.3.2 Representation of Various Energy Levels in a Semiconductor; 2.4 Types of Carriers in a Semiconductor; 2.4.1 Majority and Minority Carriers; 2.4.2 Direction of Movement of Carriers in a Semiconductor; 2.5 Nature of Band Gaps in Semiconductors; 2.6 Can the Band Gap of a Semiconductor Be Changed?; 2.7 Summary; Further Reading; 3 Theory of Junction Formation; 3.1 Flow of Carriers across the Junction 3.1.1 Why Do Carriers Flow across an Interface When n- and p-Type Semiconductors Are Joined Together with No Air Gap?3.1.2 Does the Vacuum Level Remain Unaltered, and What Is the Significance of Showing a Bend in the Diagram?; 3.1.3 Why Do We Draw a Horizontal or Exponential Line to Represent the Energy Level in the Semiconductor with a Long Line?; 3.1.4 What Are the Impacts of Migration of Carriers toward the Interface?; 3.2 Representing Energy Levels Graphically; 3.3 Depth of Charge Separation at the Interface of n- and p-Type Semiconductors; 3.4 Nature of Potential at the Interface 3.4.1 Does Any Current Flow through the Interface?3.4.2 Effect of Application of External Potential to the p:n Junction Formed by the Two Semiconductors; 3.4.2.1 Flow of Carriers from n-Type to p-Type; 3.4.2.2 Flow of Carriers from p-Type to n-Type; 3.4.2.3 Flow of Current due to Holes; 3.4.2.4 Flow of Current due to Electrons; 3.4.3 What Would Happen If Negative Potential Were Applied to a p-Type Semiconductor?; 3.4.3.1 Flow of Majority Carriers from p- to n-Type Semiconductors; 3.4.3.2 Flow of Majority Carriers from n- to p-Type 3.4.3.3 Flow of Minority Carrier from p- to n-Type Semiconductors |
| Record Nr. | UNINA-9910135020203321 |
|
Sharon Maheshwar
|
||
| Hoboken, New Jersey : , : John Wiley & Sons | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications / / Maheshwar Sharon
| An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications / / Maheshwar Sharon |
| Autore | Sharon Maheshwar |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : John Wiley & Sons |
| Descrizione fisica | 1 online resource (342 p.) |
| Disciplina | 537.6/22 |
| Soggetto topico |
Semiconductors - Electric properties
Semiconductors - Materials |
| ISBN |
1-119-27435-4
1-119-27434-6 1-119-27436-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Title Page; Copyright Page; Dedication; Contents; Foreword; Preface; 1 Our Universe and the Sun; 1.1 Formation of the Universe; 1.2 Formation of Stars; 1.2.1 Formation of Energy in the Sun; 1.2.2 Description of the Sun; 1.2.3 Transfer of Solar Rays through the Ozone Layer; 1.2.4 Transfer of Solar Layers through Other Layers; 1.2.5 Effect of Position of the Sun vis-à-vis the Earth; 1.2.6 Distribution of Solar Energy; 1.2.7 Solar Intensity Calculation; 1.3 Summary; Reference; 2 Solar Energy and Its Applications; 2.1 Introduction to a Semiconductor; 2.2 Formation of a Compound
2.2.1 A Classical Approach2.2.2 Why Call It a Band and Not a Level?; 2.2.3 Quantum Chemistry Approach; 2.2.3.1 Wave Nature of an Electron in a Fixed Potential; 2.2.3.2 Wave Nature of an Electron under a Periodically Changing Potential; 2.2.3.3 Concept of a Forbidden Gap in a Material; 2.2.4 Band Model to Explain Conductivity in Solids; 2.2.4.1 Which of the Total Electrons Will Accept the External Energy for Their Excitation?; 2.2.4.2 Density of States; 2.2.4.3 How Do We Find the Numbers of Electrons in These Bands?; 2.2.5 Useful Deductions; 2.2.5.1 Extrinsic Semiconductor 2.2.5.2 Role of Dopants in the Semiconductor2.3 Quantum Theory Approach to Explain the Effect of Doping; 2.3.1 A Mathematical Approach to Understanding This Problem; 2.3.2 Representation of Various Energy Levels in a Semiconductor; 2.4 Types of Carriers in a Semiconductor; 2.4.1 Majority and Minority Carriers; 2.4.2 Direction of Movement of Carriers in a Semiconductor; 2.5 Nature of Band Gaps in Semiconductors; 2.6 Can the Band Gap of a Semiconductor Be Changed?; 2.7 Summary; Further Reading; 3 Theory of Junction Formation; 3.1 Flow of Carriers across the Junction 3.1.1 Why Do Carriers Flow across an Interface When n- and p-Type Semiconductors Are Joined Together with No Air Gap?3.1.2 Does the Vacuum Level Remain Unaltered, and What Is the Significance of Showing a Bend in the Diagram?; 3.1.3 Why Do We Draw a Horizontal or Exponential Line to Represent the Energy Level in the Semiconductor with a Long Line?; 3.1.4 What Are the Impacts of Migration of Carriers toward the Interface?; 3.2 Representing Energy Levels Graphically; 3.3 Depth of Charge Separation at the Interface of n- and p-Type Semiconductors; 3.4 Nature of Potential at the Interface 3.4.1 Does Any Current Flow through the Interface?3.4.2 Effect of Application of External Potential to the p:n Junction Formed by the Two Semiconductors; 3.4.2.1 Flow of Carriers from n-Type to p-Type; 3.4.2.2 Flow of Carriers from p-Type to n-Type; 3.4.2.3 Flow of Current due to Holes; 3.4.2.4 Flow of Current due to Electrons; 3.4.3 What Would Happen If Negative Potential Were Applied to a p-Type Semiconductor?; 3.4.3.1 Flow of Majority Carriers from p- to n-Type Semiconductors; 3.4.3.2 Flow of Majority Carriers from n- to p-Type 3.4.3.3 Flow of Minority Carrier from p- to n-Type Semiconductors |
| Record Nr. | UNINA-9910812217703321 |
|
Sharon Maheshwar
|
||
| Hoboken, New Jersey : , : John Wiley & Sons | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Semiconductor physics, quantum electronics, and optoelectronics
| Semiconductor physics, quantum electronics, and optoelectronics |
| Pubbl/distr/stampa | Kyïv, : National Academy of Sciences of Ukraine, Institut of Semiconductor Physics, 1999- |
| Descrizione fisica | 1 online resource |
| Soggetto topico |
Semiconductors - Electric properties
Quantum electronics Optoelectronics |
| Soggetto genere / forma | Periodicals. |
| ISSN | 1605-6582 |
| Formato | Materiale a stampa |
| Livello bibliografico | Periodico |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996290950403316 |
| Kyïv, : National Academy of Sciences of Ukraine, Institut of Semiconductor Physics, 1999- | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Semiconductor physics, quantum electronics, and optoelectronics
| Semiconductor physics, quantum electronics, and optoelectronics |
| Pubbl/distr/stampa | Kyïv, : National Academy of Sciences of Ukraine, Institut of Semiconductor Physics, 1999- |
| Descrizione fisica | 1 online resource |
| Soggetto topico |
Semiconductors - Electric properties
Quantum electronics Optoelectronics |
| Soggetto genere / forma | Periodicals. |
| ISSN | 1605-6582 |
| Formato | Materiale a stampa |
| Livello bibliografico | Periodico |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910142791403321 |
| Kyïv, : National Academy of Sciences of Ukraine, Institut of Semiconductor Physics, 1999- | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
