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Bahan Semikonduktor III-Nitrida : Aplikasi bagi Peranti Optoelektronik dan Elektronik / / Zainuriah Hassan
| Bahan Semikonduktor III-Nitrida : Aplikasi bagi Peranti Optoelektronik dan Elektronik / / Zainuriah Hassan |
| Autore | Hassan Zainuriah |
| Pubbl/distr/stampa | Pulau Pinang, Malaysia : , : Penerbit Universiti Sains Malaysia, , [2016] |
| Descrizione fisica | 1 online resource (44 pages) |
| Disciplina | 621.381045 |
| Soggetto topico |
Optoelectronic devices - Design and construction
Semiconductors - Analysis |
| Soggetto genere / forma | Electronic books. |
| ISBN | 983-861-804-7 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | may |
| Record Nr. | UNINA-9910467900403321 |
Hassan Zainuriah
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| Pulau Pinang, Malaysia : , : Penerbit Universiti Sains Malaysia, , [2016] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Bahan Semikonduktor III-Nitrida : Aplikasi bagi Peranti Optoelektronik dan Elektronik / / Zainuriah Hassan
| Bahan Semikonduktor III-Nitrida : Aplikasi bagi Peranti Optoelektronik dan Elektronik / / Zainuriah Hassan |
| Autore | Hassan Zainuriah |
| Pubbl/distr/stampa | Pulau Pinang, Malaysia : , : Penerbit Universiti Sains Malaysia, , [2016] |
| Descrizione fisica | 1 online resource (44 pages) |
| Disciplina | 621.381045 |
| Soggetto topico |
Optoelectronic devices - Design and construction
Semiconductors - Analysis |
| ISBN | 983-861-804-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | may |
| Record Nr. | UNINA-9910795076703321 |
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Hassan Zainuriah
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| Pulau Pinang, Malaysia : , : Penerbit Universiti Sains Malaysia, , [2016] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Bahan Semikonduktor III-Nitrida : Aplikasi bagi Peranti Optoelektronik dan Elektronik / / Zainuriah Hassan
| Bahan Semikonduktor III-Nitrida : Aplikasi bagi Peranti Optoelektronik dan Elektronik / / Zainuriah Hassan |
| Autore | Hassan Zainuriah |
| Pubbl/distr/stampa | Pulau Pinang, Malaysia : , : Penerbit Universiti Sains Malaysia, , [2016] |
| Descrizione fisica | 1 online resource (44 pages) |
| Disciplina | 621.381045 |
| Soggetto topico |
Optoelectronic devices - Design and construction
Semiconductors - Analysis |
| ISBN | 983-861-804-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | may |
| Record Nr. | UNINA-9910815870103321 |
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Hassan Zainuriah
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| Pulau Pinang, Malaysia : , : Penerbit Universiti Sains Malaysia, , [2016] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Handbook of Semiconductor Technology
| Handbook of Semiconductor Technology |
| Pubbl/distr/stampa | [Place of publication not identified], : Wiley VCH Imprint, 2000 |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Semiconductors - Analysis
Semiconductors - Materials Semiconductors - Design and construction Electronic structure - Defects Semiconductors Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| ISBN | 3-527-61929-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910144686403321 |
| [Place of publication not identified], : Wiley VCH Imprint, 2000 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Handbook of Semiconductor Technology
| Handbook of Semiconductor Technology |
| Pubbl/distr/stampa | [Place of publication not identified], : Wiley VCH Imprint, 2000 |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Semiconductors - Analysis
Semiconductors - Materials Semiconductors - Design and construction Electronic structure - Defects Semiconductors Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| ISBN | 3-527-61929-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910830491703321 |
| [Place of publication not identified], : Wiley VCH Imprint, 2000 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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IRE28.S1-1960 - IEEE Standards on Solid-State Devices : Definitions of Semiconductor Terms 1960 / / Institute of Electrical and Electronics Engineers
| IRE28.S1-1960 - IEEE Standards on Solid-State Devices : Definitions of Semiconductor Terms 1960 / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | [Place of publication not identified] : , : IEEE, , 1959 |
| Descrizione fisica | 1 online resource (103 pages) |
| Disciplina | 621.38152 |
| Soggetto topico | Semiconductors - Analysis |
| ISBN | 1-5044-0546-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | IRE28.S1-1960 - IEEE Standards on Solid-State Devices |
| Record Nr. | UNINA-9910341953103321 |
| [Place of publication not identified] : , : IEEE, , 1959 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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IRE28.S1-1960 - IEEE Standards on Solid-State Devices : Definitions of Semiconductor Terms 1960 / / Institute of Electrical and Electronics Engineers
| IRE28.S1-1960 - IEEE Standards on Solid-State Devices : Definitions of Semiconductor Terms 1960 / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | [Place of publication not identified] : , : IEEE, , 1959 |
| Descrizione fisica | 1 online resource (103 pages) |
| Disciplina | 621.38152 |
| Soggetto topico | Semiconductors - Analysis |
| ISBN | 1-5044-0546-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | IRE28.S1-1960 - IEEE Standards on Solid-State Devices |
| Record Nr. | UNISA-996577967603316 |
| [Place of publication not identified] : , : IEEE, , 1959 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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Nanostructured semiconductors / / Serge Zhuiykov
| Nanostructured semiconductors / / Serge Zhuiykov |
| Autore | Zhuiykov Serge |
| Edizione | [Second edition.] |
| Pubbl/distr/stampa | Duxford, England : , : Woodhead Publishing, , 2018 |
| Descrizione fisica | 1 online resource (551 pages) : illustrations |
| Disciplina | 621.38152 |
| Collana | Woodhead Publishing Series in Electronic and Optical Materials |
| Soggetto topico | Semiconductors - Analysis |
| ISBN | 0-08-101920-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910583079103321 |
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Zhuiykov Serge
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| Duxford, England : , : Woodhead Publishing, , 2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Properties of group-IV, III-V and II-VI semiconductors [[electronic resource] /] / Sadao Adachi
| Properties of group-IV, III-V and II-VI semiconductors [[electronic resource] /] / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
| Descrizione fisica | 1 online resource (407 p.) |
| Disciplina |
621.3815/2
621.38152 |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Semiconductors - Analysis |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-26896-4
9786610268962 0-470-09034-0 0-470-09033-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Properties of Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Acknowledgments/Dedication; 1 Structural Properties; 1.1 Ionicity; 1.1.1 Definition; (a) Phillips ionicity; (b) Pauling ionicity; (c) Harrison ionicity; 1.1.2 Ionicity Value; 1.2 Elemental Isotopic Abundance and Molecular Weight; 1.2.1 Elemental Isotopic Abundance; 1.2.2 Molecular Weight; 1.3 Crystal Structure and Space Group; 1.3.1 Crystal Structure; (a) Diamond, zinc-blende and wurtzite structures; (b) Hexagonal and rhombohedral structures; (c) Rocksalt structure; 1.3.2 Space Group
1.4 Lattice Constant and Related Parameters1.4.1 Lattice Constant; (a) Room-temperature value; (b) Near-neighbor distance; (c) External perturbation effect; 1.4.2 Molecular and Crystal Densities; 1.5 Structural Phase Transitions; 1.6 Cleavage; 1.6.1 Cleavage Plane; 1.6.2 Surface Energy; (a) Theoretical value; (b) Experimental value; References; 2 Thermal Properties; 2.1 Melting Point and Related Parameters; 2.1.1 Phase Diagram; 2.1.2 Melting Point; 2.2 Specific Heat; 2.3 Debye Temperature; 2.4 Thermal Expansion Coefficient; 2.5 Thermal Conductivity and Diffusivity; 2.5.1 Thermal Conductivity 2.5.2 Thermal DiffusivityReferences; 3 Elastic Properties; 3.1 Elastic Constant; 3.1.1 General Remarks; 3.1.2 Room-temperature Value; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 Third-order Elastic Constant; 3.3 Young's Modulus, Poisson's Ratio and Similar Properties; 3.3.1 Young's Modulus and Poisson's Ratio: Cubic Lattice; 3.3.2 Bulk Modulus, Shear Modulus and Similar Properties: Cubic Lattice; 3.3.3 Young's Modulus and Poisson's Ratio: Hexagonal Lattice; 3.3.4 Bulk Modulus, Shear Modulus and Similar Properties: Hexagonal Lattice; 3.4 Microhardness 3.5 Sound VelocityReferences; 4 Lattice Dynamic Properties; 4.1 Phonon Dispersion Relation; 4.1.1 Brillouin Zone; (a) Face-centered cubic lattice; (b) Hexagonal lattice; (c) Rhombohedral lattice; 4.1.2 Phonon Dispersion Curve; (a) Cubic lattice; (b) Hexagonal lattice; 4.1.3 Phonon Density of States; 4.2 Phonon Frequency; 4.2.1 Room-temperature Value; 4.2.2 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 4.3 Mode Grüneisen Parameter; 4.4 Phonon Deformation Potential; 4.4.1 Cubic Lattice; 4.4.2 Hexagonal Lattice; References 5 Collective Effects and Some Response Characteristics5.1 Piezoelectric and Electromechanical Constants; 5.1.1 Piezoelectric Constant; (a) Piezoelectric stress constant; (b) Piezoelectric strain constant; 5.1.2 Electromechanical Coupling Constant; 5.2 Fröhlich Coupling Constant; References; 6 Energy-band Structure: Energy-band Gaps; 6.1 Basic Properties; 6.1.1 Energy-band Structure; (a) Diamond-type semiconductor; (b) Zinc-blende-type semiconductor; (c) Wurtzite-type semiconductor; 6.1.2 Electronic Density of States; 6.2 E(0)-gap Region; 6.2.1 Effective G-point Hamiltonian 6.2.2 Room-temperature Value |
| Record Nr. | UNINA-9910142692403321 |
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Adachi Sadao <1950->
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| Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Properties of group-IV, III-V and II-VI semiconductors [[electronic resource] /] / Sadao Adachi
| Properties of group-IV, III-V and II-VI semiconductors [[electronic resource] /] / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
| Descrizione fisica | 1 online resource (407 p.) |
| Disciplina |
621.3815/2
621.38152 |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Semiconductors - Analysis |
| ISBN |
1-280-26896-4
9786610268962 0-470-09034-0 0-470-09033-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Properties of Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Acknowledgments/Dedication; 1 Structural Properties; 1.1 Ionicity; 1.1.1 Definition; (a) Phillips ionicity; (b) Pauling ionicity; (c) Harrison ionicity; 1.1.2 Ionicity Value; 1.2 Elemental Isotopic Abundance and Molecular Weight; 1.2.1 Elemental Isotopic Abundance; 1.2.2 Molecular Weight; 1.3 Crystal Structure and Space Group; 1.3.1 Crystal Structure; (a) Diamond, zinc-blende and wurtzite structures; (b) Hexagonal and rhombohedral structures; (c) Rocksalt structure; 1.3.2 Space Group
1.4 Lattice Constant and Related Parameters1.4.1 Lattice Constant; (a) Room-temperature value; (b) Near-neighbor distance; (c) External perturbation effect; 1.4.2 Molecular and Crystal Densities; 1.5 Structural Phase Transitions; 1.6 Cleavage; 1.6.1 Cleavage Plane; 1.6.2 Surface Energy; (a) Theoretical value; (b) Experimental value; References; 2 Thermal Properties; 2.1 Melting Point and Related Parameters; 2.1.1 Phase Diagram; 2.1.2 Melting Point; 2.2 Specific Heat; 2.3 Debye Temperature; 2.4 Thermal Expansion Coefficient; 2.5 Thermal Conductivity and Diffusivity; 2.5.1 Thermal Conductivity 2.5.2 Thermal DiffusivityReferences; 3 Elastic Properties; 3.1 Elastic Constant; 3.1.1 General Remarks; 3.1.2 Room-temperature Value; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 Third-order Elastic Constant; 3.3 Young's Modulus, Poisson's Ratio and Similar Properties; 3.3.1 Young's Modulus and Poisson's Ratio: Cubic Lattice; 3.3.2 Bulk Modulus, Shear Modulus and Similar Properties: Cubic Lattice; 3.3.3 Young's Modulus and Poisson's Ratio: Hexagonal Lattice; 3.3.4 Bulk Modulus, Shear Modulus and Similar Properties: Hexagonal Lattice; 3.4 Microhardness 3.5 Sound VelocityReferences; 4 Lattice Dynamic Properties; 4.1 Phonon Dispersion Relation; 4.1.1 Brillouin Zone; (a) Face-centered cubic lattice; (b) Hexagonal lattice; (c) Rhombohedral lattice; 4.1.2 Phonon Dispersion Curve; (a) Cubic lattice; (b) Hexagonal lattice; 4.1.3 Phonon Density of States; 4.2 Phonon Frequency; 4.2.1 Room-temperature Value; 4.2.2 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 4.3 Mode Grüneisen Parameter; 4.4 Phonon Deformation Potential; 4.4.1 Cubic Lattice; 4.4.2 Hexagonal Lattice; References 5 Collective Effects and Some Response Characteristics5.1 Piezoelectric and Electromechanical Constants; 5.1.1 Piezoelectric Constant; (a) Piezoelectric stress constant; (b) Piezoelectric strain constant; 5.1.2 Electromechanical Coupling Constant; 5.2 Fröhlich Coupling Constant; References; 6 Energy-band Structure: Energy-band Gaps; 6.1 Basic Properties; 6.1.1 Energy-band Structure; (a) Diamond-type semiconductor; (b) Zinc-blende-type semiconductor; (c) Wurtzite-type semiconductor; 6.1.2 Electronic Density of States; 6.2 E(0)-gap Region; 6.2.1 Effective G-point Hamiltonian 6.2.2 Room-temperature Value |
| Record Nr. | UNINA-9910830087103321 |
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Adachi Sadao <1950->
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| Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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