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Design and characterization of integrated varactors for RF applications [[electronic resource] /] / Íñigo Gutiérrez, Juan Meléndez, Erik Hernández
| Design and characterization of integrated varactors for RF applications [[electronic resource] /] / Íñigo Gutiérrez, Juan Meléndez, Erik Hernández |
| Autore | Gutiérrez Íñigo |
| Pubbl/distr/stampa | Chichester, West Sussex, England ; ; Hoboken, NJ, : Wiley, c2006 |
| Descrizione fisica | 1 online resource (182 p.) |
| Disciplina |
621.3815
621.381522 |
| Altri autori (Persone) |
MeléndezJuan <1974->
HernándezErik |
| Soggetto topico |
Varactors - Design and construction
Radio capacitors - Design and construction Radio circuits - Design and construction Integrated circuits - Design and construction |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-85476-6
9786610854769 0-470-03592-7 1-60119-377-7 0-470-03591-9 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Design and Characterization of Integrated Varactors for RF Applications; Contents; List of Figures; List of Tables; Preface; Acknowledgements; 1 Introduction; 1.1 Passive Elements; 1.2 Figures of Merit of Varactors; 1.2.1 Quality Factor; 1.2.2 Tuning Range; 1.2.3 Self-resonant Frequency(fR); 1.2.4 Effective Silicon Area; 1.2.5 Absolute Capacity Value; 1.3 Principal Types of Varactor Manufacture; 1.3.1 Discrete Varactors; 1.3.2 MEMS Varactors; 1.3.3 BST Varactors; 1.3.4 Integrated Varactors using Standard Technologies; References; 2 PN-junction Varactors
2.1 The Operating Principle of a PN-junction Varactor2.1.1 Electrical Phenomena in a PN-junction Varactor; 2.2 Different Architectures of PN-junction Varactors; 2.2.1 Different Configurations of PN-junction Varactors; 2.3 Influence of Bias Voltage on the Behaviour of a PN-junction Varactor; 2.4 Influence of Geometric Parameters on the Behaviour of a PN-junction Varactor; 2.4.1 Influence in the Variation of the Number of Islands; 2.4.2 Influence of the Size of the Islands; 2.4.3 Influence of the Distance Between Islands; 2.4.4 Variation of the Size of the N Well 2.5 Influence of the Working Frequency on the Results2.5.1 Influence of the Frequency on the Quality of a Varactor; 2.5.2 Influence of the Frequency on the Capacitance of a Varactor; 2.6 Comparison Between the Different Types of PN-junction Varactors; 2.6.1 Comparison According to the Effective Silicon Area; 2.6.2 Comparison According to the Quality Factor; References; 3 MOS Varactors; 3.1 Operating Principles of an NMOS Varactor; 3.1.1 Operating Ranges of the NMOS Varactor; 3.1.2 Electrical Phenomena of an NMOS Varactor in Accumulation Mode 3.1.3 Electrical Phenomena of an NMOS Varactor in Depletion Mode3.2 NMOS Varactors; 3.2.1 Operating Ranges of the NMOS Varactor; 3.3 Influence of the Operating Mode on an NMOS Varactor; 3.4 Influence of Bias Voltage on the Behaviour of an NMOS Accumulation Varactor; 3.5 Influence of Geometric Parameters on the Behaviour of an NMOS Varactor; 3.5.1 Influence of the Variation of the Varactor Size; 3.5.2 Influence of the Varactor Gate Length on its Performance; 3.5.3 Influence of the Varactor Gate Width on its Performance; 3.6 Influence of the Working Frequency on the Results; References 4 Measurement Techniques for Integrated Varactors4.1 Test System; 4.2 Equipment Required for the On-Wafer Testing of Integrated Varactors; 4.2.1 Test Probes; 4.2.2 Connectivity; 4.3 Calibrating the Test System; 4.4 Test Structures; 4.4.1 Choosing the Test Structure Configuration; 4.4.2 Design of the Test Structures; 4.4.3 Effects Introduced by the Test Structures; 4.5 Test Structure DE-embedding Techniques; 4.5.1 Single-Short Structure; 4.5.2 Single-Open Structure; 4.5.3 Thru Structure; 4.6 Characterization of Integrated Varactors; 4.7 Test System Verification 4.7.1 Error Introduced by Positioning the Test Probes on the Pads |
| Record Nr. | UNINA-9910143584503321 |
Gutiérrez Íñigo
|
||
| Chichester, West Sussex, England ; ; Hoboken, NJ, : Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Design and characterization of integrated varactors for RF applications [[electronic resource] /] / Íñigo Gutiérrez, Juan Meléndez, Erik Hernández
| Design and characterization of integrated varactors for RF applications [[electronic resource] /] / Íñigo Gutiérrez, Juan Meléndez, Erik Hernández |
| Autore | Gutiérrez Íñigo |
| Pubbl/distr/stampa | Chichester, West Sussex, England ; ; Hoboken, NJ, : Wiley, c2006 |
| Descrizione fisica | 1 online resource (182 p.) |
| Disciplina |
621.3815
621.381522 |
| Altri autori (Persone) |
MeléndezJuan <1974->
HernándezErik |
| Soggetto topico |
Varactors - Design and construction
Radio capacitors - Design and construction Radio circuits - Design and construction Integrated circuits - Design and construction |
| ISBN |
1-280-85476-6
9786610854769 0-470-03592-7 1-60119-377-7 0-470-03591-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Design and Characterization of Integrated Varactors for RF Applications; Contents; List of Figures; List of Tables; Preface; Acknowledgements; 1 Introduction; 1.1 Passive Elements; 1.2 Figures of Merit of Varactors; 1.2.1 Quality Factor; 1.2.2 Tuning Range; 1.2.3 Self-resonant Frequency(fR); 1.2.4 Effective Silicon Area; 1.2.5 Absolute Capacity Value; 1.3 Principal Types of Varactor Manufacture; 1.3.1 Discrete Varactors; 1.3.2 MEMS Varactors; 1.3.3 BST Varactors; 1.3.4 Integrated Varactors using Standard Technologies; References; 2 PN-junction Varactors
2.1 The Operating Principle of a PN-junction Varactor2.1.1 Electrical Phenomena in a PN-junction Varactor; 2.2 Different Architectures of PN-junction Varactors; 2.2.1 Different Configurations of PN-junction Varactors; 2.3 Influence of Bias Voltage on the Behaviour of a PN-junction Varactor; 2.4 Influence of Geometric Parameters on the Behaviour of a PN-junction Varactor; 2.4.1 Influence in the Variation of the Number of Islands; 2.4.2 Influence of the Size of the Islands; 2.4.3 Influence of the Distance Between Islands; 2.4.4 Variation of the Size of the N Well 2.5 Influence of the Working Frequency on the Results2.5.1 Influence of the Frequency on the Quality of a Varactor; 2.5.2 Influence of the Frequency on the Capacitance of a Varactor; 2.6 Comparison Between the Different Types of PN-junction Varactors; 2.6.1 Comparison According to the Effective Silicon Area; 2.6.2 Comparison According to the Quality Factor; References; 3 MOS Varactors; 3.1 Operating Principles of an NMOS Varactor; 3.1.1 Operating Ranges of the NMOS Varactor; 3.1.2 Electrical Phenomena of an NMOS Varactor in Accumulation Mode 3.1.3 Electrical Phenomena of an NMOS Varactor in Depletion Mode3.2 NMOS Varactors; 3.2.1 Operating Ranges of the NMOS Varactor; 3.3 Influence of the Operating Mode on an NMOS Varactor; 3.4 Influence of Bias Voltage on the Behaviour of an NMOS Accumulation Varactor; 3.5 Influence of Geometric Parameters on the Behaviour of an NMOS Varactor; 3.5.1 Influence of the Variation of the Varactor Size; 3.5.2 Influence of the Varactor Gate Length on its Performance; 3.5.3 Influence of the Varactor Gate Width on its Performance; 3.6 Influence of the Working Frequency on the Results; References 4 Measurement Techniques for Integrated Varactors4.1 Test System; 4.2 Equipment Required for the On-Wafer Testing of Integrated Varactors; 4.2.1 Test Probes; 4.2.2 Connectivity; 4.3 Calibrating the Test System; 4.4 Test Structures; 4.4.1 Choosing the Test Structure Configuration; 4.4.2 Design of the Test Structures; 4.4.3 Effects Introduced by the Test Structures; 4.5 Test Structure DE-embedding Techniques; 4.5.1 Single-Short Structure; 4.5.2 Single-Open Structure; 4.5.3 Thru Structure; 4.6 Characterization of Integrated Varactors; 4.7 Test System Verification 4.7.1 Error Introduced by Positioning the Test Probes on the Pads |
| Record Nr. | UNINA-9910830721603321 |
|
Gutiérrez Íñigo
|
||
| Chichester, West Sussex, England ; ; Hoboken, NJ, : Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Design and characterization of integrated varactors for RF applications [[electronic resource] /] / Íñigo Gutiérrez, Juan Meléndez, Erik Hernández
| Design and characterization of integrated varactors for RF applications [[electronic resource] /] / Íñigo Gutiérrez, Juan Meléndez, Erik Hernández |
| Autore | Gutiérrez Íñigo |
| Pubbl/distr/stampa | Chichester, West Sussex, England ; ; Hoboken, NJ, : Wiley, c2006 |
| Descrizione fisica | 1 online resource (182 p.) |
| Disciplina |
621.3815
621.381522 |
| Altri autori (Persone) |
MeléndezJuan <1974->
HernándezErik |
| Soggetto topico |
Varactors - Design and construction
Radio capacitors - Design and construction Radio circuits - Design and construction Integrated circuits - Design and construction |
| ISBN |
1-280-85476-6
9786610854769 0-470-03592-7 1-60119-377-7 0-470-03591-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Design and Characterization of Integrated Varactors for RF Applications; Contents; List of Figures; List of Tables; Preface; Acknowledgements; 1 Introduction; 1.1 Passive Elements; 1.2 Figures of Merit of Varactors; 1.2.1 Quality Factor; 1.2.2 Tuning Range; 1.2.3 Self-resonant Frequency(fR); 1.2.4 Effective Silicon Area; 1.2.5 Absolute Capacity Value; 1.3 Principal Types of Varactor Manufacture; 1.3.1 Discrete Varactors; 1.3.2 MEMS Varactors; 1.3.3 BST Varactors; 1.3.4 Integrated Varactors using Standard Technologies; References; 2 PN-junction Varactors
2.1 The Operating Principle of a PN-junction Varactor2.1.1 Electrical Phenomena in a PN-junction Varactor; 2.2 Different Architectures of PN-junction Varactors; 2.2.1 Different Configurations of PN-junction Varactors; 2.3 Influence of Bias Voltage on the Behaviour of a PN-junction Varactor; 2.4 Influence of Geometric Parameters on the Behaviour of a PN-junction Varactor; 2.4.1 Influence in the Variation of the Number of Islands; 2.4.2 Influence of the Size of the Islands; 2.4.3 Influence of the Distance Between Islands; 2.4.4 Variation of the Size of the N Well 2.5 Influence of the Working Frequency on the Results2.5.1 Influence of the Frequency on the Quality of a Varactor; 2.5.2 Influence of the Frequency on the Capacitance of a Varactor; 2.6 Comparison Between the Different Types of PN-junction Varactors; 2.6.1 Comparison According to the Effective Silicon Area; 2.6.2 Comparison According to the Quality Factor; References; 3 MOS Varactors; 3.1 Operating Principles of an NMOS Varactor; 3.1.1 Operating Ranges of the NMOS Varactor; 3.1.2 Electrical Phenomena of an NMOS Varactor in Accumulation Mode 3.1.3 Electrical Phenomena of an NMOS Varactor in Depletion Mode3.2 NMOS Varactors; 3.2.1 Operating Ranges of the NMOS Varactor; 3.3 Influence of the Operating Mode on an NMOS Varactor; 3.4 Influence of Bias Voltage on the Behaviour of an NMOS Accumulation Varactor; 3.5 Influence of Geometric Parameters on the Behaviour of an NMOS Varactor; 3.5.1 Influence of the Variation of the Varactor Size; 3.5.2 Influence of the Varactor Gate Length on its Performance; 3.5.3 Influence of the Varactor Gate Width on its Performance; 3.6 Influence of the Working Frequency on the Results; References 4 Measurement Techniques for Integrated Varactors4.1 Test System; 4.2 Equipment Required for the On-Wafer Testing of Integrated Varactors; 4.2.1 Test Probes; 4.2.2 Connectivity; 4.3 Calibrating the Test System; 4.4 Test Structures; 4.4.1 Choosing the Test Structure Configuration; 4.4.2 Design of the Test Structures; 4.4.3 Effects Introduced by the Test Structures; 4.5 Test Structure DE-embedding Techniques; 4.5.1 Single-Short Structure; 4.5.2 Single-Open Structure; 4.5.3 Thru Structure; 4.6 Characterization of Integrated Varactors; 4.7 Test System Verification 4.7.1 Error Introduced by Positioning the Test Probes on the Pads |
| Record Nr. | UNINA-9910841389203321 |
|
Gutiérrez Íñigo
|
||
| Chichester, West Sussex, England ; ; Hoboken, NJ, : Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
