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2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003 : proceedings : 14-17 April 2003, Cambridge, UK / / Institute of Electrical and Electronics Engineers
2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003 : proceedings : 14-17 April 2003, Cambridge, UK / / Institute of Electrical and Electronics Engineers
Pubbl/distr/stampa Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2003
Descrizione fisica 1 online resource (113 pages)
Disciplina 621.317
Soggetto topico Power electronics
Power semiconductors
Integrated circuits
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996210238903316
Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2003
Materiale a stampa
Lo trovi qui: Univ. di Salerno
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2004 proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs : 24-27 May 2004
2004 proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs : 24-27 May 2004
Pubbl/distr/stampa New York : , : IEEE, , 2004
Descrizione fisica 1 online resource (477 pages)
Soggetto topico Power electronics
Power semiconductors
Integrated circuits
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996206246803316
New York : , : IEEE, , 2004
Materiale a stampa
Lo trovi qui: Univ. di Salerno
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2010 22nd International Symposium on Power Semiconductor Devices and IC's
2010 22nd International Symposium on Power Semiconductor Devices and IC's
Pubbl/distr/stampa [Place of publication not identified], : I E E E, 2010
Descrizione fisica 1 online resource : illustrations
Disciplina 621.3815
Soggetto topico Integrated circuits
Power semiconductors
ISBN 9784886860699
4886860699
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910140651303321
[Place of publication not identified], : I E E E, 2010
Materiale a stampa
Lo trovi qui: Univ. Federico II
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2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's : 10-14 May 2015, Hong Kong, China / / sponsored by IEEE, Electron Devices Society
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's : 10-14 May 2015, Hong Kong, China / / sponsored by IEEE, Electron Devices Society
Pubbl/distr/stampa Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2015
Descrizione fisica 1 online resource (72 pages)
Disciplina 621.317
Soggetto topico Power electronics
Power semiconductors
Integrated circuits
ISBN 1-4799-6261-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996280938403316
Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2015
Materiale a stampa
Lo trovi qui: Univ. di Salerno
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2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's : 10-14 May 2015, Hong Kong, China / / sponsored by IEEE, Electron Devices Society
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's : 10-14 May 2015, Hong Kong, China / / sponsored by IEEE, Electron Devices Society
Pubbl/distr/stampa Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2015
Descrizione fisica 1 online resource (72 pages)
Disciplina 621.317
Soggetto topico Power electronics
Power semiconductors
Integrated circuits
ISBN 1-4799-6261-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910131438803321
Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2015
Materiale a stampa
Lo trovi qui: Univ. Federico II
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2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs : 13-17 May 2018, Chicago, IL, USA / / IEEE Electron Devices Society
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs : 13-17 May 2018, Chicago, IL, USA / / IEEE Electron Devices Society
Pubbl/distr/stampa Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2018
Descrizione fisica 1 online resource (71 pages)
Disciplina 621.317
Soggetto topico Power electronics
Power semiconductors
Integrated circuits
ISBN 1-5386-2927-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996280696603316
Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2018
Materiale a stampa
Lo trovi qui: Univ. di Salerno
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2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs : 13-17 May 2018, Chicago, IL, USA / / IEEE Electron Devices Society
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs : 13-17 May 2018, Chicago, IL, USA / / IEEE Electron Devices Society
Pubbl/distr/stampa Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2018
Descrizione fisica 1 online resource (71 pages)
Disciplina 621.317
Soggetto topico Power electronics
Power semiconductors
Integrated circuits
ISBN 1-5386-2927-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910280921603321
Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2018
Materiale a stampa
Lo trovi qui: Univ. Federico II
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The BaSIC topology : a revolutionary power device control strategy / / B. Jayant Baliga, Ajit Kanale
The BaSIC topology : a revolutionary power device control strategy / / B. Jayant Baliga, Ajit Kanale
Autore Baliga B. Jayant
Pubbl/distr/stampa Cham : , : Springer, , [2025]
Descrizione fisica 1 online resource (xxii, 316 pages) : illustrations
Disciplina 621.381044
Soggetto topico Power semiconductors
Electric power production
Power electronics
Electronic circuits
Electronics
Power Electronics
Electronic Circuits and Systems
Electronics and Microelectronics, Instrumentation
Electrical Power Engineering
ISBN 9783031866302
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Introduction -- Short-circuit withstand capability -- Conventional current sensing in devices -- The BaSIC topology concept -- Application of the BaSIC Topology to Si IGBTs -- Application of the BaSIC Topology to SiC Power MOSFETs -- Application of the BaSIC Topology to GaN HEMT devices -- Current Sensing using the BaSIC Topology -- Eliminating repetitive short-circuit failure using the BaSIC Topology -- Avalanche ruggedness of the BaSIC Topology to GaN HEMT devices -- Optimization of Silicon Depletion-Mode MOSFETs for the BaSIC Topology -- Selection Methodology for Silicon Enhancement-Mode MOSFETs for the BaSIC Topology -- Comparison of the BaSIC Topology to the conventional DESAT topology -- Synopsys.
Record Nr. UNINA-9911003588303321
Baliga B. Jayant  
Cham : , : Springer, , [2025]
Materiale a stampa
Lo trovi qui: Univ. Federico II
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IEEE International Symposium on Power Semiconductor Devices and IC's, 1991
IEEE International Symposium on Power Semiconductor Devices and IC's, 1991
Pubbl/distr/stampa [Place of publication not identified], : IEEE, 1991
Descrizione fisica 1 online resource (viii, 260 pages) : illustrations
Disciplina 621.317
Soggetto topico Power semiconductors
Power electronics
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996218267203316
[Place of publication not identified], : IEEE, 1991
Materiale a stampa
Lo trovi qui: Univ. di Salerno
Opac: Controlla la disponibilità qui
IEEE International Symposium on Power Semiconductor Devices and IC's, 1991
IEEE International Symposium on Power Semiconductor Devices and IC's, 1991
Pubbl/distr/stampa [Place of publication not identified], : IEEE, 1991
Descrizione fisica 1 online resource (viii, 260 pages) : illustrations
Disciplina 621.317
Soggetto topico Power semiconductors
Power electronics
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910872417103321
[Place of publication not identified], : IEEE, 1991
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui