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Biblioteca

MARC Lista (tabellare)
The load-pull method of RF and microwave power amplifier design / / John Sevic
The load-pull method of RF and microwave power amplifier design / / John Sevic
Autore Sevic John
Pubbl/distr/stampa Hoboken, New Jersey : , : Wiley, , [2020]
Descrizione fisica 1 online resource (xxxii, 151 pages)
Disciplina 621.38412
Soggetto topico Power amplifiers - Design and construction
Amplifiers, Radio frequency - Design and construction
Microwave amplifiers - Design and construction
Soggetto genere / forma Electronic books.
ISBN 1-5231-3746-0
1-119-07806-7
1-119-07812-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910555247003321
Sevic John  
Hoboken, New Jersey : , : Wiley, , [2020]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
The load-pull method of RF and microwave power amplifier design / / John Sevic
The load-pull method of RF and microwave power amplifier design / / John Sevic
Autore Sevic John
Pubbl/distr/stampa Hoboken, New Jersey : , : Wiley, , [2020]
Descrizione fisica 1 online resource (xxxii, 151 pages)
Disciplina 621.38412
Soggetto topico Power amplifiers - Design and construction
Amplifiers, Radio frequency - Design and construction
Microwave amplifiers - Design and construction
ISBN 1-5231-3746-0
1-119-07806-7
1-119-07812-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910830759203321
Sevic John  
Hoboken, New Jersey : , : Wiley, , [2020]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Load-pull techniques with applications to power amplifier design / / Fadhel M. Ghannouchi, Mohammad S. Hashmi
Load-pull techniques with applications to power amplifier design / / Fadhel M. Ghannouchi, Mohammad S. Hashmi
Autore Ghannouchi Fadhel M
Edizione [1st ed.]
Pubbl/distr/stampa New York, : Springer, 2013
Descrizione fisica 1 online resource (240 p.)
Disciplina 621.389/33
Altri autori (Persone) HashmiMohammad S
Collana Springer series in advanced microelectronics
Soggetto topico Power amplifiers - Design and construction
ISBN 1-280-86210-6
9786613712332
94-007-4461-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto 1 Fundamentals -- 2 Passive Load-Pull Systems -- 3 Active Load-Pull Systems -- 4 Six-Port Based Load-Pull System -- 5 High-Power Load-Pull Systems -- 6 Envelope Load-Pull System -- 7 Waveform Measurement and Engineering -- 8 Advanced Configurations and Applications -- Authors -- About the Book -- Index.
Record Nr. UNINA-9910437887703321
Ghannouchi Fadhel M  
New York, : Springer, 2013
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Microwave power amplifier design with MMIC modules / / Howard Hausman
Microwave power amplifier design with MMIC modules / / Howard Hausman
Autore Hausman Howard
Pubbl/distr/stampa Norwood, Massachusetts : , : Artech House, , [2018]
Descrizione fisica 1 online resource (xxii, 366 pages)
Disciplina 621.38412
Collana Artech House microwave library
Soggetto topico Power amplifiers - Design and construction
Microwave amplifiers - Design and construction
Microwave equipment - Circuits
Soggetto genere / forma Electronic books.
ISBN 1-63081-525-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Intro; Microwave Power Amplifier Design with MMIC Modules; Contents; Preface; Introduction; Part I: Useful Microwave Design Concepts; Part II: Designing the Power Amplifier; Part III: Designing the Power Amplifier System; Summary; Chapter 1 Introduction; 1.1 Introduction to Designing Microwave Solid State Power Amplifiers; 1.2 Applications of SSPAs; 1.3 A Typical SSPA Configuration; 1.4 Typical Documents Starting a Project; 1.5 General Format of the SCD; 1.5.1 Paragraph 1.0: Scope; 1.5.2 Paragraph 2.0: Applicable Documents; 1.5.3 Paragraph 3.0: Requirements; 1.5.4 Paragraph 4.0: Verification.
1.5.5 Paragraph 5.0: Packaging1.5.6 Paragraph 6.0: Notes; 1.6 Requirements Section of an SCD; 1.6.1 Electrical Requirements; 1.6.2 Mechanical Requirements; 1.6.3 Environmental Requirements; 1.6.4 Other Design Criteria; References; Part I Useful Microwave Design Concepts; Chapter 2 Lumped Components in RF and Microwave Circuitry; 2.1 Applicability of Lumped Element Analysis; 2.1.1 Calculating Wavelengths; 2.1.2 Example: Calculating Wavelengths for Lumped Circuit Analysis; 2.2 Capacitor Characteristics at High Frequencies; 2.2.1 Single-Layer and Multilayer Capacitor Construction.
2.2.2 High-Frequency Capacitor Models2.2.3 Capacitor Losses (Q); 2.2.4 Capacitor Resonance; 2.3 Resistor Characteristics at High Frequencies; 2.3.1 High-Frequency Surface Mount Resistors; 2.3.2 Flip-Chip Surface Mount Resistors; 2.3.3 Thick-Film and Thin-Film Surface-Mount Resistors; 2.3.4 High-Frequency Effects of Thick-Film and Thin-Film Resistors; 2.3.5 Notes on Thin-Film Resistors; 2.3.6 Notes on Thick-Film Resistors; 2.4 Inductors; 2.4.1 Calculating Inductance of a Cylindrical Coil of Wire; 2.4.2 Inductors at High Frequencies; 2.4.3 Inductors at Resonance.
2.4.4 Inductance of a Straight Wire2.4.5 Planar Spiral Inductors; 2.4.6 Conical Inductors; 2.4.7 Inductance of Via Holes; 2.4.8 Inductance of Bond Wire; 2.4.9 Inductance of Flat or Ribbon Wire; References; Chapter 3 Transmission Lines; 3.1 Introduction to Transmission Line Theory; 3.2 Common Transmission Line Topologies; 3.3 Transmission Line Characteristics Using Lumped Circuit Elements; 3.3.1 Distributed Lumped Constant Model; 3.3.2 Modeling a Microstrip Transmission Line with Distributed Lumped Elements; 3.3.3 Characteristic Impedance of Transmission Line from the Lumped Circuit Model.
Record Nr. UNINA-9910480354303321
Hausman Howard  
Norwood, Massachusetts : , : Artech House, , [2018]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Microwave power amplifier design with MMIC modules / / Howard Hausman
Microwave power amplifier design with MMIC modules / / Howard Hausman
Autore Hausman Howard
Pubbl/distr/stampa Norwood, Massachusetts : , : Artech House, , [2018]
Descrizione fisica 1 online resource (xxii, 366 pages)
Disciplina 621.38412
Collana Artech House microwave library
Soggetto topico Power amplifiers - Design and construction
Microwave amplifiers - Design and construction
Microwave equipment - Circuits
ISBN 1-63081-525-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Intro; Microwave Power Amplifier Design with MMIC Modules; Contents; Preface; Introduction; Part I: Useful Microwave Design Concepts; Part II: Designing the Power Amplifier; Part III: Designing the Power Amplifier System; Summary; Chapter 1 Introduction; 1.1 Introduction to Designing Microwave Solid State Power Amplifiers; 1.2 Applications of SSPAs; 1.3 A Typical SSPA Configuration; 1.4 Typical Documents Starting a Project; 1.5 General Format of the SCD; 1.5.1 Paragraph 1.0: Scope; 1.5.2 Paragraph 2.0: Applicable Documents; 1.5.3 Paragraph 3.0: Requirements; 1.5.4 Paragraph 4.0: Verification.
1.5.5 Paragraph 5.0: Packaging1.5.6 Paragraph 6.0: Notes; 1.6 Requirements Section of an SCD; 1.6.1 Electrical Requirements; 1.6.2 Mechanical Requirements; 1.6.3 Environmental Requirements; 1.6.4 Other Design Criteria; References; Part I Useful Microwave Design Concepts; Chapter 2 Lumped Components in RF and Microwave Circuitry; 2.1 Applicability of Lumped Element Analysis; 2.1.1 Calculating Wavelengths; 2.1.2 Example: Calculating Wavelengths for Lumped Circuit Analysis; 2.2 Capacitor Characteristics at High Frequencies; 2.2.1 Single-Layer and Multilayer Capacitor Construction.
2.2.2 High-Frequency Capacitor Models2.2.3 Capacitor Losses (Q); 2.2.4 Capacitor Resonance; 2.3 Resistor Characteristics at High Frequencies; 2.3.1 High-Frequency Surface Mount Resistors; 2.3.2 Flip-Chip Surface Mount Resistors; 2.3.3 Thick-Film and Thin-Film Surface-Mount Resistors; 2.3.4 High-Frequency Effects of Thick-Film and Thin-Film Resistors; 2.3.5 Notes on Thin-Film Resistors; 2.3.6 Notes on Thick-Film Resistors; 2.4 Inductors; 2.4.1 Calculating Inductance of a Cylindrical Coil of Wire; 2.4.2 Inductors at High Frequencies; 2.4.3 Inductors at Resonance.
2.4.4 Inductance of a Straight Wire2.4.5 Planar Spiral Inductors; 2.4.6 Conical Inductors; 2.4.7 Inductance of Via Holes; 2.4.8 Inductance of Bond Wire; 2.4.9 Inductance of Flat or Ribbon Wire; References; Chapter 3 Transmission Lines; 3.1 Introduction to Transmission Line Theory; 3.2 Common Transmission Line Topologies; 3.3 Transmission Line Characteristics Using Lumped Circuit Elements; 3.3.1 Distributed Lumped Constant Model; 3.3.2 Modeling a Microstrip Transmission Line with Distributed Lumped Elements; 3.3.3 Characteristic Impedance of Transmission Line from the Lumped Circuit Model.
Record Nr. UNINA-9910793011803321
Hausman Howard  
Norwood, Massachusetts : , : Artech House, , [2018]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Microwave power amplifier design with MMIC modules / / Howard Hausman
Microwave power amplifier design with MMIC modules / / Howard Hausman
Autore Hausman Howard
Pubbl/distr/stampa Norwood, Massachusetts : , : Artech House, , [2018]
Descrizione fisica 1 online resource (xxii, 366 pages)
Disciplina 621.38412
Collana Artech House microwave library
Soggetto topico Power amplifiers - Design and construction
Microwave amplifiers - Design and construction
Microwave equipment - Circuits
ISBN 1-63081-525-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Intro; Microwave Power Amplifier Design with MMIC Modules; Contents; Preface; Introduction; Part I: Useful Microwave Design Concepts; Part II: Designing the Power Amplifier; Part III: Designing the Power Amplifier System; Summary; Chapter 1 Introduction; 1.1 Introduction to Designing Microwave Solid State Power Amplifiers; 1.2 Applications of SSPAs; 1.3 A Typical SSPA Configuration; 1.4 Typical Documents Starting a Project; 1.5 General Format of the SCD; 1.5.1 Paragraph 1.0: Scope; 1.5.2 Paragraph 2.0: Applicable Documents; 1.5.3 Paragraph 3.0: Requirements; 1.5.4 Paragraph 4.0: Verification.
1.5.5 Paragraph 5.0: Packaging1.5.6 Paragraph 6.0: Notes; 1.6 Requirements Section of an SCD; 1.6.1 Electrical Requirements; 1.6.2 Mechanical Requirements; 1.6.3 Environmental Requirements; 1.6.4 Other Design Criteria; References; Part I Useful Microwave Design Concepts; Chapter 2 Lumped Components in RF and Microwave Circuitry; 2.1 Applicability of Lumped Element Analysis; 2.1.1 Calculating Wavelengths; 2.1.2 Example: Calculating Wavelengths for Lumped Circuit Analysis; 2.2 Capacitor Characteristics at High Frequencies; 2.2.1 Single-Layer and Multilayer Capacitor Construction.
2.2.2 High-Frequency Capacitor Models2.2.3 Capacitor Losses (Q); 2.2.4 Capacitor Resonance; 2.3 Resistor Characteristics at High Frequencies; 2.3.1 High-Frequency Surface Mount Resistors; 2.3.2 Flip-Chip Surface Mount Resistors; 2.3.3 Thick-Film and Thin-Film Surface-Mount Resistors; 2.3.4 High-Frequency Effects of Thick-Film and Thin-Film Resistors; 2.3.5 Notes on Thin-Film Resistors; 2.3.6 Notes on Thick-Film Resistors; 2.4 Inductors; 2.4.1 Calculating Inductance of a Cylindrical Coil of Wire; 2.4.2 Inductors at High Frequencies; 2.4.3 Inductors at Resonance.
2.4.4 Inductance of a Straight Wire2.4.5 Planar Spiral Inductors; 2.4.6 Conical Inductors; 2.4.7 Inductance of Via Holes; 2.4.8 Inductance of Bond Wire; 2.4.9 Inductance of Flat or Ribbon Wire; References; Chapter 3 Transmission Lines; 3.1 Introduction to Transmission Line Theory; 3.2 Common Transmission Line Topologies; 3.3 Transmission Line Characteristics Using Lumped Circuit Elements; 3.3.1 Distributed Lumped Constant Model; 3.3.2 Modeling a Microstrip Transmission Line with Distributed Lumped Elements; 3.3.3 Characteristic Impedance of Transmission Line from the Lumped Circuit Model.
Record Nr. UNINA-9910817270903321
Hausman Howard  
Norwood, Massachusetts : , : Artech House, , [2018]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Modeling and design techniques for RF power amplifiers [[e-book] /] / Arvind Raghavan, Nuttapong Srirattana, Joy Laskar
Modeling and design techniques for RF power amplifiers [[e-book] /] / Arvind Raghavan, Nuttapong Srirattana, Joy Laskar
Autore Raghavan Arvind
Pubbl/distr/stampa Hoboken, New Jersey : , : Wiley-Interscience, , c2008
Descrizione fisica 1 online resource (220 p.)
Disciplina 621.384/12
Altri autori (Persone) LaskarJoy
SrirattanaNuttapong
Soggetto topico Power amplifiers - Design and construction
Amplifiers, Radio frequency
ISBN 1-281-20401-3
9786611204013
0-470-22831-8
0-470-22830-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto PREFACE ix -- 1 INTRODUCTION 1 -- 1.1 Semiconductor Technology and RF Power Amplifier Design 2 -- 1.2 Device Modeling 3 -- 1.3 Power Amplifier IC Design 4 -- 1.4 Power Amplifier Linearity 5 -- 1.5 Modulation Schemes 5 -- 1.6 Circuit Simulation 9 -- 1.7 Load-Pull Measurements 10 -- References 13 -- 2 DEVICE MODELING FOR CAD 15 -- 2.1 Introduction 15 -- 2.2 Bipolar Junction and Weterojunction Bipolar Transistors 16 -- 2.3 Bipolar Device Models 18 -- 2.3.1 The Ebers-Moll Model 18 -- 2.3.2 The Gummel-Poon Model 20 -- 2.3.3 The VBlC Model 25 -- 2.3.4 MEXTRAM 29 -- 2.3.5 HICUM 32 -- 2.4 MOSFET Device Physics 35 -- 2.5 MOSFET Device Models 38 -- 2.5.1 The Level 1 Model 38 -- 2.5.2 The Level 2 and Level 3 Models 40 -- 2.5.3 BSlM 40 -- 2.5.4 The BSIM2 and HSPICE Level 28 Models 43 -- 2.5.5 BSIM3 44 -- 2.5.6 MOS Model 9 and MOS Model 11 45 -- 2.5.7 BSIM4 45 -- References 46 -- 3 EMPIRICAL MODELING OF BIPOLAR DEVICES 49 -- 3.1 Introduction 49 -- 3.1.1 Modeling the HBT versus the BJT 49 -- 3.1.2 Parameter Extraction 50 -- 3.1.3 Motivation for an Empirical Bipolar Device Model 51 -- 3.1.4 Physics-Based and Empirical Models 53 -- 3.1.5 Compatibility between Large- and Small-Signal Models 53 -- 3.2 Model Construction and Parameter Extraction 54 -- 3.2.1 Current Source Model 54 -- 3.2.2 Current Source Model Parameter Extraction 56 -- 3.2.3 Extraction of Intrinsic Capacitances 58 -- 3.2.4 Extraction of Base Resistance 60 -- 3.2.5 Parameter Extraction Procedure 61 -- 3.3 Temperature-Dependent InGaP/GaAs HBT Large-Signal Model 63 -- 3.4 Empirical Si BJT Large-Signal Model 71 -- 3.5 Extension of the Empirical Modeling Method to the SiGe HBT 77 -- 3.6 Summary 83 -- References 83 -- 4 SCALABLE MODELING OF RF MOSFETS 87 -- 4.1 Introduction 87 -- 4.1.1 NQS Effects 88 -- 4.1.2 Distributed Gate Resistance 89 -- 4.1.3 Distributed Substrate Resistance 89 -- 4.2 Scalable Modified BSIM3v3 Model 91 -- 4.2.1 Scalability of MOSFET Model 91 -- 4.2.2 Extraction of Small-Signal Model Parameters 94 -- 4.2.3 Scalable Substrate Network Modeling 101.
4.2.4 Modified BSIM3v3 Model 116 -- 4.3 Summary 120 -- References 120 -- 5 POWER AMPLIFIEIR IC DESIGN 123 -- 5.1 Introduction 123 -- 5.2 Power Amplifier Design Methodology 124 -- 5.3 Classes of Operation 125 -- 5.4 Performance Metrics 132 -- 5.5 Thermal Instability and Ballasting 136 -- References 138 -- 6 POWER AMPLIFIER DESIGN IN SILICON 141 -- 6.1 Introduction 141 -- 6.2 A 2.4-GHz High-Efficiency SiGe HBT Power Amplifier 142 -- 6.2.1 Circuit Design Considerations 143 -- 6.2.2 Analysis of Ballasting for SiGe HBT Power Amplifiers 146 -- 6.2.3 Harmonic Suppression Filter and Output Match Network 148 -- 6.2.4 Performance of the Power Amplifier Module 150 -- 6.3 RF Power Amplifier Design Using Device Periphery Adjustment 153 -- 6.3.1 Analysis of the Device Periphery Adjustment Technique 155 -- 6.3.2 1.9-GHz CMOS Power Amplifier 157 -- 6.3.3 1.9-GHz CDMA/PCS SiGe HBT Power Amplifier 162 -- 6.3.4 Nonlinear Term Cancellation for Linearity Improvement 166 -- References 169 -- 7 EFFICIENCY ENHANCEMENT OF RF POWER AMPLIFIERS 173 -- 7.1 Introduction 173 -- 7.2 Efficiency Enhancement Techniques 174 -- 7.2.1 Envelope Elimination and Restoration 174 -- 7.2.2 Bias Adaptation 175 -- 7.2.3 The Doherty Amplifier Technique 175 -- 7.2.4 Chireix's Outphasing Amplifier Technique 176 -- 7.3 The Classical Doherty Amplifier 179 -- 7.4 The Multistage Doherty Amplifier 181 -- 7.4.1 Principle of Operation 181 -- 7.4.2 Analysis of Efficiency 186 -- 7.4.3 Practical Considerations 188 -- 7.4.4 Measurement Results 190 -- References 198 -- INDEX 199.
Record Nr. UNINA-9910145749803321
Raghavan Arvind  
Hoboken, New Jersey : , : Wiley-Interscience, , c2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Modeling and design techniques for RF power amplifiers / / Arvind Raghavan, Nuttapong Srirattana, Joy Laskar
Modeling and design techniques for RF power amplifiers / / Arvind Raghavan, Nuttapong Srirattana, Joy Laskar
Autore Raghavan Arvind
Edizione [1st ed.]
Pubbl/distr/stampa Hoboken, N.J., : Wiley-Interscience, : IEEE Press, c2008
Descrizione fisica 1 online resource (220 p.)
Disciplina 621.384/12
Altri autori (Persone) SrirattanaNuttapong
LaskarJoy
Soggetto topico Power amplifiers - Design and construction
Amplifiers, Radio frequency
ISBN 9786611204013
9781281204011
1281204013
9780470228319
0470228318
9780470228302
047022830X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto PREFACE ix -- 1 INTRODUCTION 1 -- 1.1 Semiconductor Technology and RF Power Amplifier Design 2 -- 1.2 Device Modeling 3 -- 1.3 Power Amplifier IC Design 4 -- 1.4 Power Amplifier Linearity 5 -- 1.5 Modulation Schemes 5 -- 1.6 Circuit Simulation 9 -- 1.7 Load-Pull Measurements 10 -- References 13 -- 2 DEVICE MODELING FOR CAD 15 -- 2.1 Introduction 15 -- 2.2 Bipolar Junction and Weterojunction Bipolar Transistors 16 -- 2.3 Bipolar Device Models 18 -- 2.3.1 The Ebers-Moll Model 18 -- 2.3.2 The Gummel-Poon Model 20 -- 2.3.3 The VBlC Model 25 -- 2.3.4 MEXTRAM 29 -- 2.3.5 HICUM 32 -- 2.4 MOSFET Device Physics 35 -- 2.5 MOSFET Device Models 38 -- 2.5.1 The Level 1 Model 38 -- 2.5.2 The Level 2 and Level 3 Models 40 -- 2.5.3 BSlM 40 -- 2.5.4 The BSIM2 and HSPICE Level 28 Models 43 -- 2.5.5 BSIM3 44 -- 2.5.6 MOS Model 9 and MOS Model 11 45 -- 2.5.7 BSIM4 45 -- References 46 -- 3 EMPIRICAL MODELING OF BIPOLAR DEVICES 49 -- 3.1 Introduction 49 -- 3.1.1 Modeling the HBT versus the BJT 49 -- 3.1.2 Parameter Extraction 50 -- 3.1.3 Motivation for an Empirical Bipolar Device Model 51 -- 3.1.4 Physics-Based and Empirical Models 53 -- 3.1.5 Compatibility between Large- and Small-Signal Models 53 -- 3.2 Model Construction and Parameter Extraction 54 -- 3.2.1 Current Source Model 54 -- 3.2.2 Current Source Model Parameter Extraction 56 -- 3.2.3 Extraction of Intrinsic Capacitances 58 -- 3.2.4 Extraction of Base Resistance 60 -- 3.2.5 Parameter Extraction Procedure 61 -- 3.3 Temperature-Dependent InGaP/GaAs HBT Large-Signal Model 63 -- 3.4 Empirical Si BJT Large-Signal Model 71 -- 3.5 Extension of the Empirical Modeling Method to the SiGe HBT 77 -- 3.6 Summary 83 -- References 83 -- 4 SCALABLE MODELING OF RF MOSFETS 87 -- 4.1 Introduction 87 -- 4.1.1 NQS Effects 88 -- 4.1.2 Distributed Gate Resistance 89 -- 4.1.3 Distributed Substrate Resistance 89 -- 4.2 Scalable Modified BSIM3v3 Model 91 -- 4.2.1 Scalability of MOSFET Model 91 -- 4.2.2 Extraction of Small-Signal Model Parameters 94 -- 4.2.3 Scalable Substrate Network Modeling 101.
4.2.4 Modified BSIM3v3 Model 116 -- 4.3 Summary 120 -- References 120 -- 5 POWER AMPLIFIEIR IC DESIGN 123 -- 5.1 Introduction 123 -- 5.2 Power Amplifier Design Methodology 124 -- 5.3 Classes of Operation 125 -- 5.4 Performance Metrics 132 -- 5.5 Thermal Instability and Ballasting 136 -- References 138 -- 6 POWER AMPLIFIER DESIGN IN SILICON 141 -- 6.1 Introduction 141 -- 6.2 A 2.4-GHz High-Efficiency SiGe HBT Power Amplifier 142 -- 6.2.1 Circuit Design Considerations 143 -- 6.2.2 Analysis of Ballasting for SiGe HBT Power Amplifiers 146 -- 6.2.3 Harmonic Suppression Filter and Output Match Network 148 -- 6.2.4 Performance of the Power Amplifier Module 150 -- 6.3 RF Power Amplifier Design Using Device Periphery Adjustment 153 -- 6.3.1 Analysis of the Device Periphery Adjustment Technique 155 -- 6.3.2 1.9-GHz CMOS Power Amplifier 157 -- 6.3.3 1.9-GHz CDMA/PCS SiGe HBT Power Amplifier 162 -- 6.3.4 Nonlinear Term Cancellation for Linearity Improvement 166 -- References 169 -- 7 EFFICIENCY ENHANCEMENT OF RF POWER AMPLIFIERS 173 -- 7.1 Introduction 173 -- 7.2 Efficiency Enhancement Techniques 174 -- 7.2.1 Envelope Elimination and Restoration 174 -- 7.2.2 Bias Adaptation 175 -- 7.2.3 The Doherty Amplifier Technique 175 -- 7.2.4 Chireix's Outphasing Amplifier Technique 176 -- 7.3 The Classical Doherty Amplifier 179 -- 7.4 The Multistage Doherty Amplifier 181 -- 7.4.1 Principle of Operation 181 -- 7.4.2 Analysis of Efficiency 186 -- 7.4.3 Practical Considerations 188 -- 7.4.4 Measurement Results 190 -- References 198 -- INDEX 199.
Record Nr. UNINA-9910826135603321
Raghavan Arvind  
Hoboken, N.J., : Wiley-Interscience, : IEEE Press, c2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Solid-state microwave high-power amplifiers / / Franco Sechi, Marina Bujatti
Solid-state microwave high-power amplifiers / / Franco Sechi, Marina Bujatti
Autore Sechi Franco
Pubbl/distr/stampa Boston : , : Artech House, , ©2009
Descrizione fisica 1 online resource (332 p.)
Disciplina 621.381/325
Altri autori (Persone) BujattiMarina
Collana Artech House microwave library
Soggetto topico Power amplifiers - Design and construction
Microwave amplifiers - Design and construction
Soggetto genere / forma Electronic books.
ISBN 1-59693-320-8
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Machine generated contents note: Ch. 1 Introduction -- Ch. 2 High-Power Amplifiers -- Ch. 3 Physics of Active Devices -- Ch. 4 Device Characterization and Modeling -- Ch. 5
Record Nr. UNINA-9910456926403321
Sechi Franco  
Boston : , : Artech House, , ©2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Solid-state microwave high-power amplifiers / / Franco Sechi, Marina Bujatti
Solid-state microwave high-power amplifiers / / Franco Sechi, Marina Bujatti
Autore Sechi Franco
Pubbl/distr/stampa Boston : , : Artech House, , ©2009
Descrizione fisica 1 online resource (332 p.)
Disciplina 621.381/325
Altri autori (Persone) BujattiMarina
Collana Artech House microwave library
Soggetto topico Power amplifiers - Design and construction
Microwave amplifiers - Design and construction
ISBN 1-59693-320-8
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Machine generated contents note: Ch. 1 Introduction -- Ch. 2 High-Power Amplifiers -- Ch. 3 Physics of Active Devices -- Ch. 4 Device Characterization and Modeling -- Ch. 5
Record Nr. UNINA-9910781095703321
Sechi Franco  
Boston : , : Artech House, , ©2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui