Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Porous silicon in practice [[electronic resource] ] : preparation, characterization and applications / / Michael J. Sailor
| Porous silicon in practice [[electronic resource] ] : preparation, characterization and applications / / Michael J. Sailor |
| Autore | Sailor Michael J |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, 2012 |
| Descrizione fisica | 1 online resource (263 p.) |
| Disciplina | 620.193 |
| Soggetto topico | Porous silicon |
| ISBN |
3-527-64191-2
1-283-86989-6 3-527-64192-0 3-527-64190-4 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Porous Silicon in Practice: Preparation, Characterization and Applications; Contents; Preface; 1: Fundamentals of Porous Silicon Preparation; 1.1 Introduction; 1.2 Chemical Reactions Governing the Dissolution of Silicon; 1.2.1 Silicon Oxides and Their Dissolution in HF; 1.2.2 Silicon Oxides and Their Dissolution in Basic Media; 1.2.3 Silicon Hydrides; 1.3 Experimental Set-up and Terminology for Electrochemical Etching of Porous Silicon; 1.3.1 Two-Electrode Cell; 1.3.2 Three-Electrode Cell; 1.4 Electrochemical Reactions in the Silicon System
1.4.1 Four-Electron Electrochemical Oxidation of Silicon1.4.2 Two-Electron Electrochemical Oxidation of Silicon; 1.4.3 Electropolishing; 1.5 Density, Porosity, and Pore Size Definitions; 1.6 Mechanisms of Electrochemical Dissolution and Pore Formation; 1.6.1 Chemical Factors Controlling the Electrochemical Etch; 1.6.2 Crystal Face Selectivity; 1.6.3 Physical Factors Controlling the Electrochemical Etch; 1.7 Resume of the Properties of Crystalline Silicon; 1.7.1 Orientation; 1.7.2 Band Structure; 1.7.3 Electrons and Holes; 1.7.4 Photoexcitation of Semiconductors; 1.7.5 Dopants 1.7.6 Conductivity1.7.7 Evolution of Energy Bands upon Immersion in an Electrolyte; 1.7.8 Charge Transport at p-Type Si Liquid Junctions; 1.7.9 Idealized Current-Voltage Curve at p-Type Liquid Junctions; 1.7.10 Energetics at n-Type Si Liquid Junctions; 1.7.11 Idealized Current-Voltage Curve at n-type Liquid Junctions; 1.8 Choosing, Characterizing, and Preparing a Silicon Wafer; 1.8.1 Measurement of Wafer Resistivity; 1.8.2 Cleaving a Silicon Wafer; 1.8.3 Determination of Carrier Type by the Hot-Probe Method; 1.8.4 Ohmic Contacts; 1.8.4.1 Making an Ohmic Contact by Metal Evaporation 1.8.4.2 Making an Ohmic Contact by Mechanical AbrasionReferences; 2: Preparation of Micro-, Meso-, and Macro-Porous Silicon Layers; 2.1 Etch Cell: Materials and Construction; 2.2 Power Supply; 2.3 Other Supplies; 2.4 Safety Precautions and Handling of Waste; 2.5 Preparing HF Electrolyte Solutions; 2.6 Cleaning Wafers Prior to Etching; 2.6.1 No Precleaning; 2.6.2 Ultrasonic Cleaning; 2.6.3 RCA Cleaning; 2.6.4 Removal of a Sacrificial Porous Layer with Strong Base; 2.7 Preparation of Microporous Silicon from a p-Type Wafer; 2.8 Preparation of Mesoporous Silicon from a p++-Type Wafer 2.9 Preparation of Macroporous, Luminescent Porous Silicon from an n-Type Wafer (Frontside Illumination)2.9.1 Power Supply Limitations; 2.10 Preparation of Macroporous, Luminescent Porous Silicon from an n-Type Wafer (Back Side Illumination); 2.11 Preparation of Porous Silicon by Stain Etching; 2.12 Preparation of Silicon Nanowire Arrays by Metal-Assisted Etching; References; 3: Preparation of Spatially Modulated Porous Silicon Layers; 3.1 Time-Programmable Current Source; 3.1.1 Time Resolution Issues; 3.1.2 Etching with an Analog Source; 3.1.3 Etching with a Digital Source 3.2 Pore Modulation in the z-Direction: Double Layer |
| Record Nr. | UNINA-9910130957603321 |
Sailor Michael J
|
||
| Weinheim, : Wiley-VCH, 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Porous silicon in practice : preparation, characterization and applications / / Michael J. Sailor
| Porous silicon in practice : preparation, characterization and applications / / Michael J. Sailor |
| Autore | Sailor Michael J |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, 2012 |
| Descrizione fisica | 1 online resource (263 p.) |
| Disciplina | 620.193 |
| Soggetto topico | Porous silicon |
| ISBN |
9783527641918
3527641912 9781283869898 1283869896 9783527641925 3527641920 9783527641901 3527641904 |
| Classificazione |
ZM 5300
ZM 7030 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Porous Silicon in Practice: Preparation, Characterization and Applications; Contents; Preface; 1: Fundamentals of Porous Silicon Preparation; 1.1 Introduction; 1.2 Chemical Reactions Governing the Dissolution of Silicon; 1.2.1 Silicon Oxides and Their Dissolution in HF; 1.2.2 Silicon Oxides and Their Dissolution in Basic Media; 1.2.3 Silicon Hydrides; 1.3 Experimental Set-up and Terminology for Electrochemical Etching of Porous Silicon; 1.3.1 Two-Electrode Cell; 1.3.2 Three-Electrode Cell; 1.4 Electrochemical Reactions in the Silicon System
1.4.1 Four-Electron Electrochemical Oxidation of Silicon1.4.2 Two-Electron Electrochemical Oxidation of Silicon; 1.4.3 Electropolishing; 1.5 Density, Porosity, and Pore Size Definitions; 1.6 Mechanisms of Electrochemical Dissolution and Pore Formation; 1.6.1 Chemical Factors Controlling the Electrochemical Etch; 1.6.2 Crystal Face Selectivity; 1.6.3 Physical Factors Controlling the Electrochemical Etch; 1.7 Resume of the Properties of Crystalline Silicon; 1.7.1 Orientation; 1.7.2 Band Structure; 1.7.3 Electrons and Holes; 1.7.4 Photoexcitation of Semiconductors; 1.7.5 Dopants 1.7.6 Conductivity1.7.7 Evolution of Energy Bands upon Immersion in an Electrolyte; 1.7.8 Charge Transport at p-Type Si Liquid Junctions; 1.7.9 Idealized Current-Voltage Curve at p-Type Liquid Junctions; 1.7.10 Energetics at n-Type Si Liquid Junctions; 1.7.11 Idealized Current-Voltage Curve at n-type Liquid Junctions; 1.8 Choosing, Characterizing, and Preparing a Silicon Wafer; 1.8.1 Measurement of Wafer Resistivity; 1.8.2 Cleaving a Silicon Wafer; 1.8.3 Determination of Carrier Type by the Hot-Probe Method; 1.8.4 Ohmic Contacts; 1.8.4.1 Making an Ohmic Contact by Metal Evaporation 1.8.4.2 Making an Ohmic Contact by Mechanical AbrasionReferences; 2: Preparation of Micro-, Meso-, and Macro-Porous Silicon Layers; 2.1 Etch Cell: Materials and Construction; 2.2 Power Supply; 2.3 Other Supplies; 2.4 Safety Precautions and Handling of Waste; 2.5 Preparing HF Electrolyte Solutions; 2.6 Cleaning Wafers Prior to Etching; 2.6.1 No Precleaning; 2.6.2 Ultrasonic Cleaning; 2.6.3 RCA Cleaning; 2.6.4 Removal of a Sacrificial Porous Layer with Strong Base; 2.7 Preparation of Microporous Silicon from a p-Type Wafer; 2.8 Preparation of Mesoporous Silicon from a p++-Type Wafer 2.9 Preparation of Macroporous, Luminescent Porous Silicon from an n-Type Wafer (Frontside Illumination)2.9.1 Power Supply Limitations; 2.10 Preparation of Macroporous, Luminescent Porous Silicon from an n-Type Wafer (Back Side Illumination); 2.11 Preparation of Porous Silicon by Stain Etching; 2.12 Preparation of Silicon Nanowire Arrays by Metal-Assisted Etching; References; 3: Preparation of Spatially Modulated Porous Silicon Layers; 3.1 Time-Programmable Current Source; 3.1.1 Time Resolution Issues; 3.1.2 Etching with an Analog Source; 3.1.3 Etching with a Digital Source 3.2 Pore Modulation in the z-Direction: Double Layer |
| Record Nr. | UNINA-9910826827303321 |
|
Sailor Michael J
|
||
| Weinheim, : Wiley-VCH, 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Preparation of nanoporous silicon [[electronic resource] /] / Wayne A. Churaman and Luke Currano
| Preparation of nanoporous silicon [[electronic resource] /] / Wayne A. Churaman and Luke Currano |
| Autore | Churaman Wayne A |
| Pubbl/distr/stampa | Adelphi, MD : , : Army Research Laboratory, , [2007] |
| Descrizione fisica | v, 13 pages : digital, PDF file |
| Altri autori (Persone) | CurranoLuke |
| Collana | ARL-TR |
| Soggetto topico |
Porous silicon
Nanotechnology |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910698175403321 |
|
Churaman Wayne A
|
||
| Adelphi, MD : , : Army Research Laboratory, , [2007] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
