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1998 3rd International Symposium on Plasma Process-Induced Damage : June 4-5, 1998, Honolulu, Hawaii, USA
1998 3rd International Symposium on Plasma Process-Induced Damage : June 4-5, 1998, Honolulu, Hawaii, USA
Pubbl/distr/stampa [Place of publication not identified], : Northern California Chapter of the American Vacuum Society, 1998
Disciplina 621.3815/2
Soggetto topico Semiconductor wafers - Defects
Semiconductors - Effect of radiation on
Plasma etching
Electrical & Computer Engineering
Engineering & Applied Sciences
Electrical Engineering
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996206560303316
[Place of publication not identified], : Northern California Chapter of the American Vacuum Society, 1998
Materiale a stampa
Lo trovi qui: Univ. di Salerno
Opac: Controlla la disponibilità qui
Atzverfahren Fur Die Mikrotechnik
Atzverfahren Fur Die Mikrotechnik
Autore Kohler
Pubbl/distr/stampa [Place of publication not identified], : Wiley VCH Imprint, 1998
Descrizione fisica 1 online resource (409 pages)
Disciplina 540
Soggetto topico Masks (Electronics)
Microlithography
Plasma etching
ISBN 1-280-55937-3
9786610559374
3-527-60291-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione ger
Nota di contenuto Einführung -- Besonderheiten mikrotechnischer Ätzverfahren -- Nassätzverfahren -- Trockenätzverfahren -- Mikroformgebung durch Ätzen von lokal verändertem Material -- Ausgewählte Vorschriften.
Record Nr. UNINA-9910830441103321
Kohler  
[Place of publication not identified], : Wiley VCH Imprint, 1998
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Atzverfahren Fur Die Mikrotechnik
Atzverfahren Fur Die Mikrotechnik
Autore Kohler
Pubbl/distr/stampa [Place of publication not identified], : Wiley VCH Imprint, 1998
Descrizione fisica 1 online resource (409 pages)
Disciplina 540
Soggetto topico Masks (Electronics)
Microlithography
Plasma etching
ISBN 1-280-55937-3
9786610559374
3-527-60291-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione ger
Nota di contenuto Einführung -- Besonderheiten mikrotechnischer Ätzverfahren -- Nassätzverfahren -- Trockenätzverfahren -- Mikroformgebung durch Ätzen von lokal verändertem Material -- Ausgewählte Vorschriften.
Record Nr. UNINA-9910840845003321
Kohler  
[Place of publication not identified], : Wiley VCH Imprint, 1998
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching [[electronic resource] /] / Fred Semendy, Phillip Boyd, and Unchul Lee
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching [[electronic resource] /] / Fred Semendy, Phillip Boyd, and Unchul Lee
Autore Semendy Fred
Pubbl/distr/stampa Adelphi, MD : , : Army Research Laboratory, , [2004]
Descrizione fisica 1 online resource (iv, 15 pages) : illustrations (chiefly color), color charts
Altri autori (Persone) BoydPhillip
LeeUnchul
Collana ARL-TR
Soggetto topico Plasma etching
Gallium nitride
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma
Record Nr. UNINA-9910697103903321
Semendy Fred  
Adelphi, MD : , : Army Research Laboratory, , [2004]
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Etching in microsystem technology [[electronic resource] /] / Michael Köhler ; translated by Antje Wiegand
Etching in microsystem technology [[electronic resource] /] / Michael Köhler ; translated by Antje Wiegand
Autore Köhler J. M (J. Michael), <1956->
Pubbl/distr/stampa Weinheim ; ; New York, : Wiley-VCH, c1999
Descrizione fisica 1 online resource (386 p.)
Disciplina 621.381531
660
Soggetto topico Masks (Electronics)
Microlithography
Plasma etching
Soggetto genere / forma Electronic books.
ISBN 1-281-76426-4
9786611764265
3-527-61378-1
3-527-61379-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Etching in Microsystem Technology; Preface; Contents; Table of Contents; Symbols; Abbreviations; 1 Introduction; 2 Distinctive Features of Microtechnical Etching; 2.1 Etching as a Fashioning Method; 2.1.1 Limits of Additive Microtechnical Pattern Generation; 2.1.2 Subtractive Pattern Generation; 2.2 Etch Rate and Selectivity; 2.2.1 Etch Rate and Time Request; 2.2.2 The Etching Process; 2.2.3 Transport Processes; 2.2.4 Process Velocities; 2.3. Isotropic and Anisotropic Etching; 2.4 Edge Geometry and Roughness; 2.4.1 Deviations from Ideal Geometry; 2.4.2 Flank Geometry in Isotropic Etching
2.4.3 Fabrication of Low Slope Angles by Isotropic Etching2.4.4 Flank Geometries in Anisotropic Etching; 2.4.5 Setting the Flank Geometry by Partial Anisotropic Etching; 2.5 Accuracy; 2.6 Monitoring of Etching Processes; 3 Wet-Chemical Etching Methods; 3.1 Etching at the Interface Solid-Liquid; 3.2 Preparation of the Surface; 3.2.1 Surface Condition; 3.2.2 Cleaning; 3.2.3 Digital Etching; 3.3 Etching of Dielectric Materials; 3.3.1 Wet Etching by Physical Dissolution; 3.3.2 Wet-Chemical Etching of Non-Metals; 3.4 Etching of Metals and Semiconductors; 3.4.1 Outer-Currentless Etching
3.4.2 Selectivity in Outer-Currentless Etching3.4.3 Etching of Multilayer Systems Forming Local Elements; 3.4.4 Geometry-Dependent Etch Rates; 3.4.5 Geometry-Dependent Passivation; 3.4.6 Electrochemical Etching; 3.4.7 Photochemical Wet Etching; 3.4.8 Photoelectrochemical Etching(PEC); 3.5 Crystallographic Etching; 3.5.1 Chemical Wet-Etching of Monocrystalline Surfaces; 3.5.2 Anisotropic Etching of Monocrystalline Metals; 3.5.3 Anisotropic Etching of Silicon; 3.5.4 Anisotropic Electrochemical and Photoelectrochemical Etching; 3.5.5 Porous Silicon
3 S.6 Anisotropic Etching of Compound Semiconductors3.6 Preparation of Free-Standing Micropatterns; 3.6.1 Surface Micromachining; 3.6.2 Bulk Micromachining; 3.6.3 Porous Silicon as Sacrificial Material; 4 Dry-Etching Methods; 4.1 Removal at the Interface Solid-Gas; 4.2 Plasma-Free Etching in the Gas Phase; 4.2.1 Plasma-Free Dry-Etching with Reactive Gases; 4.2.2 Photo-Assisted Dry Etching with Reactive Gases; 4.2.3 Directly Writing Micropatterning by Laser Scanning Etching; 4.2.4 Electron-Beam-Assisted Vapour Etching; 4.3 Plasma Etching Methods
4.3.1 Material Removal by Reactions with Plasma Species4.3.2 Plasma Generation; 4.3.3 Plasma Etching in the Barrel Reactor; 4.3.4 Plasma Etching in the Down-Stream Reactor; 4.3.5 Plasma Etching in the Planar-Plate Reactor; 4.3.6 Magnetic-Field-Enhanced Plasma Etching; 4.3.7 Plasma Etching at Low Pressure and High Ion Density; 4.3.8 Forming of Etch Structures in Plasma Etching; 4.3.9 Geometry Influence on Plasma Etching; 4.3.10 Plasma Jet Etching (PJE); 4.3.11 Applications of Plasma Etching; 4.4 Etchig Methods with Energized Particles; 4.4.1 Sputter-Etching; 4.4.2 Reactive Ion Etching (RIE)
4.4.3 Magnetic-Field-Enhanced Reactive Ion Etching (MERIE)
Record Nr. UNINA-9910144331103321
Köhler J. M (J. Michael), <1956->  
Weinheim ; ; New York, : Wiley-VCH, c1999
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Etching in microsystem technology [[electronic resource] /] / Michael Köhler ; translated by Antje Wiegand
Etching in microsystem technology [[electronic resource] /] / Michael Köhler ; translated by Antje Wiegand
Autore Köhler J. M (J. Michael), <1956->
Pubbl/distr/stampa Weinheim ; ; New York, : Wiley-VCH, c1999
Descrizione fisica 1 online resource (386 p.)
Disciplina 621.381531
660
Soggetto topico Masks (Electronics)
Microlithography
Plasma etching
ISBN 1-281-76426-4
9786611764265
3-527-61378-1
3-527-61379-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Etching in Microsystem Technology; Preface; Contents; Table of Contents; Symbols; Abbreviations; 1 Introduction; 2 Distinctive Features of Microtechnical Etching; 2.1 Etching as a Fashioning Method; 2.1.1 Limits of Additive Microtechnical Pattern Generation; 2.1.2 Subtractive Pattern Generation; 2.2 Etch Rate and Selectivity; 2.2.1 Etch Rate and Time Request; 2.2.2 The Etching Process; 2.2.3 Transport Processes; 2.2.4 Process Velocities; 2.3. Isotropic and Anisotropic Etching; 2.4 Edge Geometry and Roughness; 2.4.1 Deviations from Ideal Geometry; 2.4.2 Flank Geometry in Isotropic Etching
2.4.3 Fabrication of Low Slope Angles by Isotropic Etching2.4.4 Flank Geometries in Anisotropic Etching; 2.4.5 Setting the Flank Geometry by Partial Anisotropic Etching; 2.5 Accuracy; 2.6 Monitoring of Etching Processes; 3 Wet-Chemical Etching Methods; 3.1 Etching at the Interface Solid-Liquid; 3.2 Preparation of the Surface; 3.2.1 Surface Condition; 3.2.2 Cleaning; 3.2.3 Digital Etching; 3.3 Etching of Dielectric Materials; 3.3.1 Wet Etching by Physical Dissolution; 3.3.2 Wet-Chemical Etching of Non-Metals; 3.4 Etching of Metals and Semiconductors; 3.4.1 Outer-Currentless Etching
3.4.2 Selectivity in Outer-Currentless Etching3.4.3 Etching of Multilayer Systems Forming Local Elements; 3.4.4 Geometry-Dependent Etch Rates; 3.4.5 Geometry-Dependent Passivation; 3.4.6 Electrochemical Etching; 3.4.7 Photochemical Wet Etching; 3.4.8 Photoelectrochemical Etching(PEC); 3.5 Crystallographic Etching; 3.5.1 Chemical Wet-Etching of Monocrystalline Surfaces; 3.5.2 Anisotropic Etching of Monocrystalline Metals; 3.5.3 Anisotropic Etching of Silicon; 3.5.4 Anisotropic Electrochemical and Photoelectrochemical Etching; 3.5.5 Porous Silicon
3 S.6 Anisotropic Etching of Compound Semiconductors3.6 Preparation of Free-Standing Micropatterns; 3.6.1 Surface Micromachining; 3.6.2 Bulk Micromachining; 3.6.3 Porous Silicon as Sacrificial Material; 4 Dry-Etching Methods; 4.1 Removal at the Interface Solid-Gas; 4.2 Plasma-Free Etching in the Gas Phase; 4.2.1 Plasma-Free Dry-Etching with Reactive Gases; 4.2.2 Photo-Assisted Dry Etching with Reactive Gases; 4.2.3 Directly Writing Micropatterning by Laser Scanning Etching; 4.2.4 Electron-Beam-Assisted Vapour Etching; 4.3 Plasma Etching Methods
4.3.1 Material Removal by Reactions with Plasma Species4.3.2 Plasma Generation; 4.3.3 Plasma Etching in the Barrel Reactor; 4.3.4 Plasma Etching in the Down-Stream Reactor; 4.3.5 Plasma Etching in the Planar-Plate Reactor; 4.3.6 Magnetic-Field-Enhanced Plasma Etching; 4.3.7 Plasma Etching at Low Pressure and High Ion Density; 4.3.8 Forming of Etch Structures in Plasma Etching; 4.3.9 Geometry Influence on Plasma Etching; 4.3.10 Plasma Jet Etching (PJE); 4.3.11 Applications of Plasma Etching; 4.4 Etchig Methods with Energized Particles; 4.4.1 Sputter-Etching; 4.4.2 Reactive Ion Etching (RIE)
4.4.3 Magnetic-Field-Enhanced Reactive Ion Etching (MERIE)
Record Nr. UNINA-9910829980103321
Köhler J. M (J. Michael), <1956->  
Weinheim ; ; New York, : Wiley-VCH, c1999
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Etching in microsystem technology [[electronic resource] /] / Michael Köhler ; translated by Antje Wiegand
Etching in microsystem technology [[electronic resource] /] / Michael Köhler ; translated by Antje Wiegand
Autore Köhler J. M (J. Michael), <1956->
Pubbl/distr/stampa Weinheim ; ; New York, : Wiley-VCH, c1999
Descrizione fisica 1 online resource (386 p.)
Disciplina 621.381531
660
Soggetto topico Masks (Electronics)
Microlithography
Plasma etching
ISBN 1-281-76426-4
9786611764265
3-527-61378-1
3-527-61379-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Etching in Microsystem Technology; Preface; Contents; Table of Contents; Symbols; Abbreviations; 1 Introduction; 2 Distinctive Features of Microtechnical Etching; 2.1 Etching as a Fashioning Method; 2.1.1 Limits of Additive Microtechnical Pattern Generation; 2.1.2 Subtractive Pattern Generation; 2.2 Etch Rate and Selectivity; 2.2.1 Etch Rate and Time Request; 2.2.2 The Etching Process; 2.2.3 Transport Processes; 2.2.4 Process Velocities; 2.3. Isotropic and Anisotropic Etching; 2.4 Edge Geometry and Roughness; 2.4.1 Deviations from Ideal Geometry; 2.4.2 Flank Geometry in Isotropic Etching
2.4.3 Fabrication of Low Slope Angles by Isotropic Etching2.4.4 Flank Geometries in Anisotropic Etching; 2.4.5 Setting the Flank Geometry by Partial Anisotropic Etching; 2.5 Accuracy; 2.6 Monitoring of Etching Processes; 3 Wet-Chemical Etching Methods; 3.1 Etching at the Interface Solid-Liquid; 3.2 Preparation of the Surface; 3.2.1 Surface Condition; 3.2.2 Cleaning; 3.2.3 Digital Etching; 3.3 Etching of Dielectric Materials; 3.3.1 Wet Etching by Physical Dissolution; 3.3.2 Wet-Chemical Etching of Non-Metals; 3.4 Etching of Metals and Semiconductors; 3.4.1 Outer-Currentless Etching
3.4.2 Selectivity in Outer-Currentless Etching3.4.3 Etching of Multilayer Systems Forming Local Elements; 3.4.4 Geometry-Dependent Etch Rates; 3.4.5 Geometry-Dependent Passivation; 3.4.6 Electrochemical Etching; 3.4.7 Photochemical Wet Etching; 3.4.8 Photoelectrochemical Etching(PEC); 3.5 Crystallographic Etching; 3.5.1 Chemical Wet-Etching of Monocrystalline Surfaces; 3.5.2 Anisotropic Etching of Monocrystalline Metals; 3.5.3 Anisotropic Etching of Silicon; 3.5.4 Anisotropic Electrochemical and Photoelectrochemical Etching; 3.5.5 Porous Silicon
3 S.6 Anisotropic Etching of Compound Semiconductors3.6 Preparation of Free-Standing Micropatterns; 3.6.1 Surface Micromachining; 3.6.2 Bulk Micromachining; 3.6.3 Porous Silicon as Sacrificial Material; 4 Dry-Etching Methods; 4.1 Removal at the Interface Solid-Gas; 4.2 Plasma-Free Etching in the Gas Phase; 4.2.1 Plasma-Free Dry-Etching with Reactive Gases; 4.2.2 Photo-Assisted Dry Etching with Reactive Gases; 4.2.3 Directly Writing Micropatterning by Laser Scanning Etching; 4.2.4 Electron-Beam-Assisted Vapour Etching; 4.3 Plasma Etching Methods
4.3.1 Material Removal by Reactions with Plasma Species4.3.2 Plasma Generation; 4.3.3 Plasma Etching in the Barrel Reactor; 4.3.4 Plasma Etching in the Down-Stream Reactor; 4.3.5 Plasma Etching in the Planar-Plate Reactor; 4.3.6 Magnetic-Field-Enhanced Plasma Etching; 4.3.7 Plasma Etching at Low Pressure and High Ion Density; 4.3.8 Forming of Etch Structures in Plasma Etching; 4.3.9 Geometry Influence on Plasma Etching; 4.3.10 Plasma Jet Etching (PJE); 4.3.11 Applications of Plasma Etching; 4.4 Etchig Methods with Energized Particles; 4.4.1 Sputter-Etching; 4.4.2 Reactive Ion Etching (RIE)
4.4.3 Magnetic-Field-Enhanced Reactive Ion Etching (MERIE)
Record Nr. UNINA-9910841565003321
Köhler J. M (J. Michael), <1956->  
Weinheim ; ; New York, : Wiley-VCH, c1999
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Plasma processing and processing science [[electronic resource] /] / Panel on Plasma Processing, Naval Studies Board, Commission on Physical Sciences, Mathematics, and Applications, National Research Council
Plasma processing and processing science [[electronic resource] /] / Panel on Plasma Processing, Naval Studies Board, Commission on Physical Sciences, Mathematics, and Applications, National Research Council
Pubbl/distr/stampa Washington, D.C., : National Academy Press, 1995
Descrizione fisica 1 online resource (45 p.)
Disciplina 621.044
Altri autori (Persone) ChenFrancis F. <1929->
Collana NRL strategic series
Soggetto topico Plasma engineering
Semiconductors - Etching
Plasma etching
Soggetto genere / forma Electronic books.
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto ""Plasma Processing and Processing Science""; ""Copyright""; ""Preface""; ""Contents""; ""Chapter 1 Introduction and Summary""; ""Chapter 2 Modeling and Simulation of Plasma Processing""; ""RESEARCH OPPORTUNITIES""; ""Requirements of the Microelectronics Fabrication Industry""; ""Multidimensional Models""; ""Plasma Chemistry""; ""Surface Chemistry""; ""Electromagnetics""; ""Current Status of Modeling and Simulation""; ""Particle-in-Cell Simulations""; ""Kinetic Models""; ""Fluid or Hydrodynamic Models""; ""Hybrid Models""; ""A ROLE FOR NRL""; ""Chapter 3 Semiconductor Processing""
""RESEARCH OPPORTUNITIES""""A ROLE FOR NRL""; ""Development and Characterization of Precompetitive Materials and Processes""; ""Comparative Analysis and Characterization of Tools and Processes in Development""; ""Sensor Development for Control and Fingerprinting of Manufacturing Processes""; ""Chapter 4 Plasma Deposition and Polymerization""; ""RESEARCH OPPORTUNITIES""; ""Semiconductor Fabrication""; ""Barrier Coatings""; ""Fibrous Materials""; ""Optical Coatings and Photonics""; ""Plasma Polymerization""; ""A ROLE FOR NRL""; ""Chapter 5 Ion Implantation and Surface Modification""
""RESEARCH OPPORTUNITIES""""Introduction""; ""Plasma and Ion Beam Implantation Technology""; ""Ion Beam Implantation""; ""Plasma Source Ion Implantation""; ""Applications""; ""Implantation of Metals""; ""Implantation of Nonmetals""; ""A ROLE FOR NRL""; ""Chapter 6 Thermal Plasmas""; ""RESEARCH OPPORTUNITIES""; ""Introduction""; ""Plasma Spraying""; ""Plasma Chemical Vapor Deposition""; ""Plasma Waste Destruction""; ""Plasma Metallurgy""; ""Thermal Plasma Synthesis""; ""Plasma Consolidation""; ""A ROLE FOR NRL""; ""Thermal Plasma Waste Destruction""; ""Plasma Chemical Vapor Deposition""
""Diamond Films""""Cubic Boron Nitride Films""; ""Carbon Nitride""; ""Chapter 7 Flat Panel Displays""; ""RESEARCH OPPORTUNITIES""; ""Introduction""; ""Passive Matrix Liquid Crystal Display""; ""Active Matrix Liquid Crystal Display""; ""Amorphous Silicon""; ""Polycrystalline Silicon""; ""Transfer Silicon""; ""Thin Film Electroluminescent Displays""; ""Digital Micromirror Devices""; ""Plasma Displays""; ""Field Emission Displays""; ""A ROLE FOR NRL""; ""Chapter 8 Low-Temperature Plasma Physics""; ""RESEARCH OPPORTUNITIES""; ""A ROLE FOR NRL""; ""Chapter 9 Conclusions and Recommendations""
""RECOMMENDATION FOR A PROGRAM IN PLASMA PROCESSING AND PROCESSING SCIENCE""""CONCLUSIONS BASED ON NRL'S PRESENT RESEARCH CAPABILITIES""
Record Nr. UNINA-9910451786303321
Washington, D.C., : National Academy Press, 1995
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Plasma processing and processing science [[electronic resource] /] / Panel on Plasma Processing, Naval Studies Board, Commission on Physical Sciences, Mathematics, and Applications, National Research Council
Plasma processing and processing science [[electronic resource] /] / Panel on Plasma Processing, Naval Studies Board, Commission on Physical Sciences, Mathematics, and Applications, National Research Council
Pubbl/distr/stampa Washington, D.C., : National Academy Press, 1995
Descrizione fisica 1 online resource (45 p.)
Disciplina 621.044
Altri autori (Persone) ChenFrancis F. <1929->
Collana NRL strategic series
Soggetto topico Plasma engineering
Semiconductors - Etching
Plasma etching
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto ""Plasma Processing and Processing Science""; ""Copyright""; ""Preface""; ""Contents""; ""Chapter 1 Introduction and Summary""; ""Chapter 2 Modeling and Simulation of Plasma Processing""; ""RESEARCH OPPORTUNITIES""; ""Requirements of the Microelectronics Fabrication Industry""; ""Multidimensional Models""; ""Plasma Chemistry""; ""Surface Chemistry""; ""Electromagnetics""; ""Current Status of Modeling and Simulation""; ""Particle-in-Cell Simulations""; ""Kinetic Models""; ""Fluid or Hydrodynamic Models""; ""Hybrid Models""; ""A ROLE FOR NRL""; ""Chapter 3 Semiconductor Processing""
""RESEARCH OPPORTUNITIES""""A ROLE FOR NRL""; ""Development and Characterization of Precompetitive Materials and Processes""; ""Comparative Analysis and Characterization of Tools and Processes in Development""; ""Sensor Development for Control and Fingerprinting of Manufacturing Processes""; ""Chapter 4 Plasma Deposition and Polymerization""; ""RESEARCH OPPORTUNITIES""; ""Semiconductor Fabrication""; ""Barrier Coatings""; ""Fibrous Materials""; ""Optical Coatings and Photonics""; ""Plasma Polymerization""; ""A ROLE FOR NRL""; ""Chapter 5 Ion Implantation and Surface Modification""
""RESEARCH OPPORTUNITIES""""Introduction""; ""Plasma and Ion Beam Implantation Technology""; ""Ion Beam Implantation""; ""Plasma Source Ion Implantation""; ""Applications""; ""Implantation of Metals""; ""Implantation of Nonmetals""; ""A ROLE FOR NRL""; ""Chapter 6 Thermal Plasmas""; ""RESEARCH OPPORTUNITIES""; ""Introduction""; ""Plasma Spraying""; ""Plasma Chemical Vapor Deposition""; ""Plasma Waste Destruction""; ""Plasma Metallurgy""; ""Thermal Plasma Synthesis""; ""Plasma Consolidation""; ""A ROLE FOR NRL""; ""Thermal Plasma Waste Destruction""; ""Plasma Chemical Vapor Deposition""
""Diamond Films""""Cubic Boron Nitride Films""; ""Carbon Nitride""; ""Chapter 7 Flat Panel Displays""; ""RESEARCH OPPORTUNITIES""; ""Introduction""; ""Passive Matrix Liquid Crystal Display""; ""Active Matrix Liquid Crystal Display""; ""Amorphous Silicon""; ""Polycrystalline Silicon""; ""Transfer Silicon""; ""Thin Film Electroluminescent Displays""; ""Digital Micromirror Devices""; ""Plasma Displays""; ""Field Emission Displays""; ""A ROLE FOR NRL""; ""Chapter 8 Low-Temperature Plasma Physics""; ""RESEARCH OPPORTUNITIES""; ""A ROLE FOR NRL""; ""Chapter 9 Conclusions and Recommendations""
""RECOMMENDATION FOR A PROGRAM IN PLASMA PROCESSING AND PROCESSING SCIENCE""""CONCLUSIONS BASED ON NRL'S PRESENT RESEARCH CAPABILITIES""
Record Nr. UNINA-9910777418303321
Washington, D.C., : National Academy Press, 1995
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Plasma processing and processing science [[electronic resource] /] / Panel on Plasma Processing, Naval Studies Board, Commission on Physical Sciences, Mathematics, and Applications, National Research Council
Plasma processing and processing science [[electronic resource] /] / Panel on Plasma Processing, Naval Studies Board, Commission on Physical Sciences, Mathematics, and Applications, National Research Council
Pubbl/distr/stampa Washington, D.C., : National Academy Press, 1995
Descrizione fisica 1 online resource (45 p.)
Disciplina 621.044
Altri autori (Persone) ChenFrancis F. <1929->
Collana NRL strategic series
Soggetto topico Plasma engineering
Semiconductors - Etching
Plasma etching
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto ""Plasma Processing and Processing Science""; ""Copyright""; ""Preface""; ""Contents""; ""Chapter 1 Introduction and Summary""; ""Chapter 2 Modeling and Simulation of Plasma Processing""; ""RESEARCH OPPORTUNITIES""; ""Requirements of the Microelectronics Fabrication Industry""; ""Multidimensional Models""; ""Plasma Chemistry""; ""Surface Chemistry""; ""Electromagnetics""; ""Current Status of Modeling and Simulation""; ""Particle-in-Cell Simulations""; ""Kinetic Models""; ""Fluid or Hydrodynamic Models""; ""Hybrid Models""; ""A ROLE FOR NRL""; ""Chapter 3 Semiconductor Processing""
""RESEARCH OPPORTUNITIES""""A ROLE FOR NRL""; ""Development and Characterization of Precompetitive Materials and Processes""; ""Comparative Analysis and Characterization of Tools and Processes in Development""; ""Sensor Development for Control and Fingerprinting of Manufacturing Processes""; ""Chapter 4 Plasma Deposition and Polymerization""; ""RESEARCH OPPORTUNITIES""; ""Semiconductor Fabrication""; ""Barrier Coatings""; ""Fibrous Materials""; ""Optical Coatings and Photonics""; ""Plasma Polymerization""; ""A ROLE FOR NRL""; ""Chapter 5 Ion Implantation and Surface Modification""
""RESEARCH OPPORTUNITIES""""Introduction""; ""Plasma and Ion Beam Implantation Technology""; ""Ion Beam Implantation""; ""Plasma Source Ion Implantation""; ""Applications""; ""Implantation of Metals""; ""Implantation of Nonmetals""; ""A ROLE FOR NRL""; ""Chapter 6 Thermal Plasmas""; ""RESEARCH OPPORTUNITIES""; ""Introduction""; ""Plasma Spraying""; ""Plasma Chemical Vapor Deposition""; ""Plasma Waste Destruction""; ""Plasma Metallurgy""; ""Thermal Plasma Synthesis""; ""Plasma Consolidation""; ""A ROLE FOR NRL""; ""Thermal Plasma Waste Destruction""; ""Plasma Chemical Vapor Deposition""
""Diamond Films""""Cubic Boron Nitride Films""; ""Carbon Nitride""; ""Chapter 7 Flat Panel Displays""; ""RESEARCH OPPORTUNITIES""; ""Introduction""; ""Passive Matrix Liquid Crystal Display""; ""Active Matrix Liquid Crystal Display""; ""Amorphous Silicon""; ""Polycrystalline Silicon""; ""Transfer Silicon""; ""Thin Film Electroluminescent Displays""; ""Digital Micromirror Devices""; ""Plasma Displays""; ""Field Emission Displays""; ""A ROLE FOR NRL""; ""Chapter 8 Low-Temperature Plasma Physics""; ""RESEARCH OPPORTUNITIES""; ""A ROLE FOR NRL""; ""Chapter 9 Conclusions and Recommendations""
""RECOMMENDATION FOR A PROGRAM IN PLASMA PROCESSING AND PROCESSING SCIENCE""""CONCLUSIONS BASED ON NRL'S PRESENT RESEARCH CAPABILITIES""
Record Nr. UNINA-9910828377903321
Washington, D.C., : National Academy Press, 1995
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui