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1997 2nd International Symposium on Plasma Process-Induced Damage : 13-14 May 1997, Monterey, California, USA
| 1997 2nd International Symposium on Plasma Process-Induced Damage : 13-14 May 1997, Monterey, California, USA |
| Pubbl/distr/stampa | [Place of publication not identified], : Northern California Chapter of the American Vacuum Society, 1997 |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Semiconductor wafers - Defects
Semiconductors - Effect of radiation on Plasma etching Electrical & Computer Engineering Electrical Engineering Engineering & Applied Sciences |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872954903321 |
| [Place of publication not identified], : Northern California Chapter of the American Vacuum Society, 1997 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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1998 3rd International Symposium on Plasma Process-Induced Damage : June 4-5, 1998, Honolulu, Hawaii, USA
| 1998 3rd International Symposium on Plasma Process-Induced Damage : June 4-5, 1998, Honolulu, Hawaii, USA |
| Pubbl/distr/stampa | [Place of publication not identified], : Northern California Chapter of the American Vacuum Society, 1998 |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Semiconductor wafers - Defects
Semiconductors - Effect of radiation on Plasma etching Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996206560303316 |
| [Place of publication not identified], : Northern California Chapter of the American Vacuum Society, 1998 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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1998 3rd International Symposium on Plasma Process-Induced Damage : June 4-5, 1998, Honolulu, Hawaii, USA
| 1998 3rd International Symposium on Plasma Process-Induced Damage : June 4-5, 1998, Honolulu, Hawaii, USA |
| Pubbl/distr/stampa | [Place of publication not identified], : Northern California Chapter of the American Vacuum Society, 1998 |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Semiconductor wafers - Defects
Semiconductors - Effect of radiation on Plasma etching Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872956003321 |
| [Place of publication not identified], : Northern California Chapter of the American Vacuum Society, 1998 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Atzverfahren Fur Die Mikrotechnik
| Atzverfahren Fur Die Mikrotechnik |
| Autore | Kohler |
| Pubbl/distr/stampa | [Place of publication not identified], : Wiley VCH Imprint, 1998 |
| Descrizione fisica | 1 online resource (409 pages) |
| Disciplina | 540 |
| Soggetto topico |
Masks (Electronics)
Microlithography Plasma etching |
| ISBN |
1-280-55937-3
9786610559374 3-527-60291-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | ger |
| Nota di contenuto | Einführung -- Besonderheiten mikrotechnischer Ätzverfahren -- Nassätzverfahren -- Trockenätzverfahren -- Mikroformgebung durch Ätzen von lokal verändertem Material -- Ausgewählte Vorschriften. |
| Record Nr. | UNINA-9910830441103321 |
Kohler
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| [Place of publication not identified], : Wiley VCH Imprint, 1998 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Atzverfahren Fur Die Mikrotechnik
| Atzverfahren Fur Die Mikrotechnik |
| Autore | Kohler |
| Pubbl/distr/stampa | [Place of publication not identified], : Wiley VCH Imprint, 1998 |
| Descrizione fisica | 1 online resource (409 pages) |
| Disciplina | 540 |
| Soggetto topico |
Masks (Electronics)
Microlithography Plasma etching |
| ISBN |
1-280-55937-3
9786610559374 3-527-60291-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | ger |
| Nota di contenuto | Einführung -- Besonderheiten mikrotechnischer Ätzverfahren -- Nassätzverfahren -- Trockenätzverfahren -- Mikroformgebung durch Ätzen von lokal verändertem Material -- Ausgewählte Vorschriften. |
| Record Nr. | UNINA-9911019555703321 |
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Kohler
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| [Place of publication not identified], : Wiley VCH Imprint, 1998 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching [[electronic resource] /] / Fred Semendy, Phillip Boyd, and Unchul Lee
| Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching [[electronic resource] /] / Fred Semendy, Phillip Boyd, and Unchul Lee |
| Autore | Semendy Fred |
| Pubbl/distr/stampa | Adelphi, MD : , : Army Research Laboratory, , [2004] |
| Descrizione fisica | 1 online resource (iv, 15 pages) : illustrations (chiefly color), color charts |
| Altri autori (Persone) |
BoydPhillip
LeeUnchul |
| Collana | ARL-TR |
| Soggetto topico |
Plasma etching
Gallium nitride |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma |
| Record Nr. | UNINA-9910697103903321 |
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Semendy Fred
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| Adelphi, MD : , : Army Research Laboratory, , [2004] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Etching in microsystem technology / / Michael Kohler ; translated by Antje Wiegand
| Etching in microsystem technology / / Michael Kohler ; translated by Antje Wiegand |
| Autore | Kohler J. M (J. Michael), <1956-> |
| Pubbl/distr/stampa | Weinheim ; ; New York, : Wiley-VCH, c1999 |
| Descrizione fisica | 1 online resource (386 p.) |
| Disciplina | 621.3815/31 |
| Soggetto topico |
Masks (Electronics)
Microlithography Plasma etching |
| ISBN |
9786611764265
9781281764263 1281764264 9783527613786 3527613781 9783527613793 352761379X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Etching in Microsystem Technology; Preface; Contents; Table of Contents; Symbols; Abbreviations; 1 Introduction; 2 Distinctive Features of Microtechnical Etching; 2.1 Etching as a Fashioning Method; 2.1.1 Limits of Additive Microtechnical Pattern Generation; 2.1.2 Subtractive Pattern Generation; 2.2 Etch Rate and Selectivity; 2.2.1 Etch Rate and Time Request; 2.2.2 The Etching Process; 2.2.3 Transport Processes; 2.2.4 Process Velocities; 2.3. Isotropic and Anisotropic Etching; 2.4 Edge Geometry and Roughness; 2.4.1 Deviations from Ideal Geometry; 2.4.2 Flank Geometry in Isotropic Etching
2.4.3 Fabrication of Low Slope Angles by Isotropic Etching2.4.4 Flank Geometries in Anisotropic Etching; 2.4.5 Setting the Flank Geometry by Partial Anisotropic Etching; 2.5 Accuracy; 2.6 Monitoring of Etching Processes; 3 Wet-Chemical Etching Methods; 3.1 Etching at the Interface Solid-Liquid; 3.2 Preparation of the Surface; 3.2.1 Surface Condition; 3.2.2 Cleaning; 3.2.3 Digital Etching; 3.3 Etching of Dielectric Materials; 3.3.1 Wet Etching by Physical Dissolution; 3.3.2 Wet-Chemical Etching of Non-Metals; 3.4 Etching of Metals and Semiconductors; 3.4.1 Outer-Currentless Etching 3.4.2 Selectivity in Outer-Currentless Etching3.4.3 Etching of Multilayer Systems Forming Local Elements; 3.4.4 Geometry-Dependent Etch Rates; 3.4.5 Geometry-Dependent Passivation; 3.4.6 Electrochemical Etching; 3.4.7 Photochemical Wet Etching; 3.4.8 Photoelectrochemical Etching(PEC); 3.5 Crystallographic Etching; 3.5.1 Chemical Wet-Etching of Monocrystalline Surfaces; 3.5.2 Anisotropic Etching of Monocrystalline Metals; 3.5.3 Anisotropic Etching of Silicon; 3.5.4 Anisotropic Electrochemical and Photoelectrochemical Etching; 3.5.5 Porous Silicon 3 S.6 Anisotropic Etching of Compound Semiconductors3.6 Preparation of Free-Standing Micropatterns; 3.6.1 Surface Micromachining; 3.6.2 Bulk Micromachining; 3.6.3 Porous Silicon as Sacrificial Material; 4 Dry-Etching Methods; 4.1 Removal at the Interface Solid-Gas; 4.2 Plasma-Free Etching in the Gas Phase; 4.2.1 Plasma-Free Dry-Etching with Reactive Gases; 4.2.2 Photo-Assisted Dry Etching with Reactive Gases; 4.2.3 Directly Writing Micropatterning by Laser Scanning Etching; 4.2.4 Electron-Beam-Assisted Vapour Etching; 4.3 Plasma Etching Methods 4.3.1 Material Removal by Reactions with Plasma Species4.3.2 Plasma Generation; 4.3.3 Plasma Etching in the Barrel Reactor; 4.3.4 Plasma Etching in the Down-Stream Reactor; 4.3.5 Plasma Etching in the Planar-Plate Reactor; 4.3.6 Magnetic-Field-Enhanced Plasma Etching; 4.3.7 Plasma Etching at Low Pressure and High Ion Density; 4.3.8 Forming of Etch Structures in Plasma Etching; 4.3.9 Geometry Influence on Plasma Etching; 4.3.10 Plasma Jet Etching (PJE); 4.3.11 Applications of Plasma Etching; 4.4 Etchig Methods with Energized Particles; 4.4.1 Sputter-Etching; 4.4.2 Reactive Ion Etching (RIE) 4.4.3 Magnetic-Field-Enhanced Reactive Ion Etching (MERIE) |
| Record Nr. | UNINA-9911018921803321 |
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Kohler J. M (J. Michael), <1956->
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| Weinheim ; ; New York, : Wiley-VCH, c1999 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Etching in microsystem technology [[electronic resource] /] / Michael Köhler ; translated by Antje Wiegand
| Etching in microsystem technology [[electronic resource] /] / Michael Köhler ; translated by Antje Wiegand |
| Autore | Köhler J. M (J. Michael), <1956-> |
| Pubbl/distr/stampa | Weinheim ; ; New York, : Wiley-VCH, c1999 |
| Descrizione fisica | 1 online resource (386 p.) |
| Disciplina |
621.381531
660 |
| Soggetto topico |
Masks (Electronics)
Microlithography Plasma etching |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-76426-4
9786611764265 3-527-61378-1 3-527-61379-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Etching in Microsystem Technology; Preface; Contents; Table of Contents; Symbols; Abbreviations; 1 Introduction; 2 Distinctive Features of Microtechnical Etching; 2.1 Etching as a Fashioning Method; 2.1.1 Limits of Additive Microtechnical Pattern Generation; 2.1.2 Subtractive Pattern Generation; 2.2 Etch Rate and Selectivity; 2.2.1 Etch Rate and Time Request; 2.2.2 The Etching Process; 2.2.3 Transport Processes; 2.2.4 Process Velocities; 2.3. Isotropic and Anisotropic Etching; 2.4 Edge Geometry and Roughness; 2.4.1 Deviations from Ideal Geometry; 2.4.2 Flank Geometry in Isotropic Etching
2.4.3 Fabrication of Low Slope Angles by Isotropic Etching2.4.4 Flank Geometries in Anisotropic Etching; 2.4.5 Setting the Flank Geometry by Partial Anisotropic Etching; 2.5 Accuracy; 2.6 Monitoring of Etching Processes; 3 Wet-Chemical Etching Methods; 3.1 Etching at the Interface Solid-Liquid; 3.2 Preparation of the Surface; 3.2.1 Surface Condition; 3.2.2 Cleaning; 3.2.3 Digital Etching; 3.3 Etching of Dielectric Materials; 3.3.1 Wet Etching by Physical Dissolution; 3.3.2 Wet-Chemical Etching of Non-Metals; 3.4 Etching of Metals and Semiconductors; 3.4.1 Outer-Currentless Etching 3.4.2 Selectivity in Outer-Currentless Etching3.4.3 Etching of Multilayer Systems Forming Local Elements; 3.4.4 Geometry-Dependent Etch Rates; 3.4.5 Geometry-Dependent Passivation; 3.4.6 Electrochemical Etching; 3.4.7 Photochemical Wet Etching; 3.4.8 Photoelectrochemical Etching(PEC); 3.5 Crystallographic Etching; 3.5.1 Chemical Wet-Etching of Monocrystalline Surfaces; 3.5.2 Anisotropic Etching of Monocrystalline Metals; 3.5.3 Anisotropic Etching of Silicon; 3.5.4 Anisotropic Electrochemical and Photoelectrochemical Etching; 3.5.5 Porous Silicon 3 S.6 Anisotropic Etching of Compound Semiconductors3.6 Preparation of Free-Standing Micropatterns; 3.6.1 Surface Micromachining; 3.6.2 Bulk Micromachining; 3.6.3 Porous Silicon as Sacrificial Material; 4 Dry-Etching Methods; 4.1 Removal at the Interface Solid-Gas; 4.2 Plasma-Free Etching in the Gas Phase; 4.2.1 Plasma-Free Dry-Etching with Reactive Gases; 4.2.2 Photo-Assisted Dry Etching with Reactive Gases; 4.2.3 Directly Writing Micropatterning by Laser Scanning Etching; 4.2.4 Electron-Beam-Assisted Vapour Etching; 4.3 Plasma Etching Methods 4.3.1 Material Removal by Reactions with Plasma Species4.3.2 Plasma Generation; 4.3.3 Plasma Etching in the Barrel Reactor; 4.3.4 Plasma Etching in the Down-Stream Reactor; 4.3.5 Plasma Etching in the Planar-Plate Reactor; 4.3.6 Magnetic-Field-Enhanced Plasma Etching; 4.3.7 Plasma Etching at Low Pressure and High Ion Density; 4.3.8 Forming of Etch Structures in Plasma Etching; 4.3.9 Geometry Influence on Plasma Etching; 4.3.10 Plasma Jet Etching (PJE); 4.3.11 Applications of Plasma Etching; 4.4 Etchig Methods with Energized Particles; 4.4.1 Sputter-Etching; 4.4.2 Reactive Ion Etching (RIE) 4.4.3 Magnetic-Field-Enhanced Reactive Ion Etching (MERIE) |
| Record Nr. | UNINA-9910144331103321 |
|
Köhler J. M (J. Michael), <1956->
|
||
| Weinheim ; ; New York, : Wiley-VCH, c1999 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Etching in microsystem technology [[electronic resource] /] / Michael Köhler ; translated by Antje Wiegand
| Etching in microsystem technology [[electronic resource] /] / Michael Köhler ; translated by Antje Wiegand |
| Autore | Köhler J. M (J. Michael), <1956-> |
| Pubbl/distr/stampa | Weinheim ; ; New York, : Wiley-VCH, c1999 |
| Descrizione fisica | 1 online resource (386 p.) |
| Disciplina |
621.381531
660 |
| Soggetto topico |
Masks (Electronics)
Microlithography Plasma etching |
| ISBN |
1-281-76426-4
9786611764265 3-527-61378-1 3-527-61379-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Etching in Microsystem Technology; Preface; Contents; Table of Contents; Symbols; Abbreviations; 1 Introduction; 2 Distinctive Features of Microtechnical Etching; 2.1 Etching as a Fashioning Method; 2.1.1 Limits of Additive Microtechnical Pattern Generation; 2.1.2 Subtractive Pattern Generation; 2.2 Etch Rate and Selectivity; 2.2.1 Etch Rate and Time Request; 2.2.2 The Etching Process; 2.2.3 Transport Processes; 2.2.4 Process Velocities; 2.3. Isotropic and Anisotropic Etching; 2.4 Edge Geometry and Roughness; 2.4.1 Deviations from Ideal Geometry; 2.4.2 Flank Geometry in Isotropic Etching
2.4.3 Fabrication of Low Slope Angles by Isotropic Etching2.4.4 Flank Geometries in Anisotropic Etching; 2.4.5 Setting the Flank Geometry by Partial Anisotropic Etching; 2.5 Accuracy; 2.6 Monitoring of Etching Processes; 3 Wet-Chemical Etching Methods; 3.1 Etching at the Interface Solid-Liquid; 3.2 Preparation of the Surface; 3.2.1 Surface Condition; 3.2.2 Cleaning; 3.2.3 Digital Etching; 3.3 Etching of Dielectric Materials; 3.3.1 Wet Etching by Physical Dissolution; 3.3.2 Wet-Chemical Etching of Non-Metals; 3.4 Etching of Metals and Semiconductors; 3.4.1 Outer-Currentless Etching 3.4.2 Selectivity in Outer-Currentless Etching3.4.3 Etching of Multilayer Systems Forming Local Elements; 3.4.4 Geometry-Dependent Etch Rates; 3.4.5 Geometry-Dependent Passivation; 3.4.6 Electrochemical Etching; 3.4.7 Photochemical Wet Etching; 3.4.8 Photoelectrochemical Etching(PEC); 3.5 Crystallographic Etching; 3.5.1 Chemical Wet-Etching of Monocrystalline Surfaces; 3.5.2 Anisotropic Etching of Monocrystalline Metals; 3.5.3 Anisotropic Etching of Silicon; 3.5.4 Anisotropic Electrochemical and Photoelectrochemical Etching; 3.5.5 Porous Silicon 3 S.6 Anisotropic Etching of Compound Semiconductors3.6 Preparation of Free-Standing Micropatterns; 3.6.1 Surface Micromachining; 3.6.2 Bulk Micromachining; 3.6.3 Porous Silicon as Sacrificial Material; 4 Dry-Etching Methods; 4.1 Removal at the Interface Solid-Gas; 4.2 Plasma-Free Etching in the Gas Phase; 4.2.1 Plasma-Free Dry-Etching with Reactive Gases; 4.2.2 Photo-Assisted Dry Etching with Reactive Gases; 4.2.3 Directly Writing Micropatterning by Laser Scanning Etching; 4.2.4 Electron-Beam-Assisted Vapour Etching; 4.3 Plasma Etching Methods 4.3.1 Material Removal by Reactions with Plasma Species4.3.2 Plasma Generation; 4.3.3 Plasma Etching in the Barrel Reactor; 4.3.4 Plasma Etching in the Down-Stream Reactor; 4.3.5 Plasma Etching in the Planar-Plate Reactor; 4.3.6 Magnetic-Field-Enhanced Plasma Etching; 4.3.7 Plasma Etching at Low Pressure and High Ion Density; 4.3.8 Forming of Etch Structures in Plasma Etching; 4.3.9 Geometry Influence on Plasma Etching; 4.3.10 Plasma Jet Etching (PJE); 4.3.11 Applications of Plasma Etching; 4.4 Etchig Methods with Energized Particles; 4.4.1 Sputter-Etching; 4.4.2 Reactive Ion Etching (RIE) 4.4.3 Magnetic-Field-Enhanced Reactive Ion Etching (MERIE) |
| Record Nr. | UNINA-9910829980103321 |
|
Köhler J. M (J. Michael), <1956->
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| Weinheim ; ; New York, : Wiley-VCH, c1999 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Handbook of plasma processing technology : fundamentals, etching, deposition, and surface interactions / / edited by Stephen M. Rossnagel, Jerome J. Cuomo, William D. Westwood
| Handbook of plasma processing technology : fundamentals, etching, deposition, and surface interactions / / edited by Stephen M. Rossnagel, Jerome J. Cuomo, William D. Westwood |
| Pubbl/distr/stampa | Park Ridge, N.J., U.S.A., : Noyes Publications, c1990 |
| Descrizione fisica | 1 online resource (548 p.) |
| Disciplina | 621.044 |
| Altri autori (Persone) |
RossnagelStephen M
CuomoJ. J WestwoodWilliam D <1937-> (William Dickson) |
| Collana | Materials science and process technology series |
| Soggetto topico |
Plasma engineering
Semiconductors - Etching Plasma etching |
| ISBN |
1-282-00277-5
9786612002762 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9911006507503321 |
| Park Ridge, N.J., U.S.A., : Noyes Publications, c1990 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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