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Advanced characterization techniques for thin film solar cells / / edited by Daniel Abou-Ras, Thomas Kirchartz, and Uwe Rau
Advanced characterization techniques for thin film solar cells / / edited by Daniel Abou-Ras, Thomas Kirchartz, and Uwe Rau
Edizione [2nd ed.]
Pubbl/distr/stampa Weinheim, Germany : , : Wiley-VCH Verlag GmbH & Co. KGaA, , 2016
Descrizione fisica 1 online resource (731 p.)
Disciplina 621.31244
Soggetto topico Photovoltaic cells - Materials
Soggetto genere / forma Electronic books.
ISBN 3-527-69904-X
3-527-69901-5
3-527-69902-3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover ; Title Page ; Copyright ; Dedication ; Contents; List of Contributors ; Preface of the Second Edition ; Preface of the First Edition ; Abbreviations ; Volume 1; Part I Introduction ; Chapter 1 Introduction to Thin-Film Photovoltaics ; 1.1 Introduction
1.2 The Photovoltaic Principle 1.2.1 The Shockley-Queisser Theory ; 1.2.2 From the Ideal Solar Cell to Real Solar Cells ; 1.2.3 Light Absorption and Light Trapping ; 1.2.4 Charge Extraction ; 1.2.5 Nonradiative Recombination ; 1.3 Functional Layers in Thin-Film Solar Cells
1.4 Comparison of Various Thin-Film Solar-Cell Types 1.4.1 Cu(In,Ga)Se2 ; 1.4.1.1 Basic Properties and Technology ; 1.4.1.2 Layer-Stacking Sequence and Band Diagram of the Heterostructure ; 1.4.2 CdTe ; 1.4.2.1 Basic Properties and Technology
1.4.2.2 Layer-Stacking Sequence and Band Diagram of the Heterostructure 1.4.3 Cu2ZnSn(S,Se)4 ; 1.4.4 Thin-Film Silicon Solar Cells ; 1.4.4.1 Hydrogenated Amorphous Si (a-Si:H) ; 1.4.4.2 Metastability in a-Si:H: The Staebler-Wronski Effect ; 1.4.4.3 Hydrogenated Microcrystalline Silicon ( c-Si:H)
1.4.4.4 Micromorph Tandem Solar Cells 1.4.4.5 Liquid-Phase Crystallized Si ; 1.4.5 Metal-Halide Perovskite Solar Cells ; 1.4.6 Organic Solar Cells ; 1.5 Conclusions ; Acknowledgments ; References ; Part II Device Characterization
Chapter 2 Fundamental Electrical Characterization of Thin-Film Solar Cells
Record Nr. UNINA-9910134852103321
Weinheim, Germany : , : Wiley-VCH Verlag GmbH & Co. KGaA, , 2016
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Advanced characterization techniques for thin film solar cells / / edited by Daniel Abou-Ras, Thomas Kirchartz, and Uwe Rau
Advanced characterization techniques for thin film solar cells / / edited by Daniel Abou-Ras, Thomas Kirchartz, and Uwe Rau
Edizione [2nd ed.]
Pubbl/distr/stampa Weinheim, Germany : , : Wiley-VCH Verlag GmbH & Co. KGaA, , 2016
Descrizione fisica 1 online resource (731 p.)
Disciplina 621.31244
Soggetto topico Photovoltaic cells - Materials
ISBN 3-527-69904-X
3-527-69901-5
3-527-69902-3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover ; Title Page ; Copyright ; Dedication ; Contents; List of Contributors ; Preface of the Second Edition ; Preface of the First Edition ; Abbreviations ; Volume 1; Part I Introduction ; Chapter 1 Introduction to Thin-Film Photovoltaics ; 1.1 Introduction
1.2 The Photovoltaic Principle 1.2.1 The Shockley-Queisser Theory ; 1.2.2 From the Ideal Solar Cell to Real Solar Cells ; 1.2.3 Light Absorption and Light Trapping ; 1.2.4 Charge Extraction ; 1.2.5 Nonradiative Recombination ; 1.3 Functional Layers in Thin-Film Solar Cells
1.4 Comparison of Various Thin-Film Solar-Cell Types 1.4.1 Cu(In,Ga)Se2 ; 1.4.1.1 Basic Properties and Technology ; 1.4.1.2 Layer-Stacking Sequence and Band Diagram of the Heterostructure ; 1.4.2 CdTe ; 1.4.2.1 Basic Properties and Technology
1.4.2.2 Layer-Stacking Sequence and Band Diagram of the Heterostructure 1.4.3 Cu2ZnSn(S,Se)4 ; 1.4.4 Thin-Film Silicon Solar Cells ; 1.4.4.1 Hydrogenated Amorphous Si (a-Si:H) ; 1.4.4.2 Metastability in a-Si:H: The Staebler-Wronski Effect ; 1.4.4.3 Hydrogenated Microcrystalline Silicon ( c-Si:H)
1.4.4.4 Micromorph Tandem Solar Cells 1.4.4.5 Liquid-Phase Crystallized Si ; 1.4.5 Metal-Halide Perovskite Solar Cells ; 1.4.6 Organic Solar Cells ; 1.5 Conclusions ; Acknowledgments ; References ; Part II Device Characterization
Chapter 2 Fundamental Electrical Characterization of Thin-Film Solar Cells
Record Nr. UNINA-9910830224203321
Weinheim, Germany : , : Wiley-VCH Verlag GmbH & Co. KGaA, , 2016
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Advanced Silicon Materials for Photovoltaic Applications [[electronic resource]]
Advanced Silicon Materials for Photovoltaic Applications [[electronic resource]]
Autore Pizzini Sergio
Pubbl/distr/stampa Hoboken, : Wiley, 2012
Descrizione fisica 1 online resource (423 p.)
Disciplina 621.3815/42
621.381542
Soggetto topico Photovoltaic cells - Materials
Photovoltaic cells -- Materials
Silicon solar cells
Silicon solar cells - Materials
Photovoltaic cells
Electrical & Computer Engineering
Engineering & Applied Sciences
Electrical Engineering
ISBN 1-118-31216-3
1-280-69946-9
9786613676443
1-118-31207-4
1-118-31219-8
1-118-31218-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Advanced Silicon Materials for Photovoltaic Applications; Contents; Preface; List of Contributors; Chapter 1 Silicon Science and Technology as the Background of the Current and Future Knowledge Society; 1.1 Introduction; 1.2 Silicon Birth from a Thermonuclear Nucleosynthetic Process; 1.3 Silicon Key Properties; 1.3.1 Chemical and Structural Properties; 1.3.2 Point Defects; 1.3.3 Radiation Damage and Radiation Hardness; 1.4 Advanced Silicon Applications; 1.4.1 Silicon Radiation Detectors; 1.4.2 Photovoltaic Cells for Space Vehicles and Satellite Applications
1.4.3 Advanced Components Based on the Dislocation oxLuminescence in Silicon1.4.4 Silicon Nanostructures; References; Chapter 2 Processes; 2.1 Introduction; 2.2 Gas-Phase Processes; 2.2.1 Preparation and Synthesis of Volatile Silicon Compounds; 2.2.2 Purification of Volatile Silicon Compounds; 2.2.3 Decomposition of Volatile Precursors to Elemental Silicon; 2.2.4 Most Common Reactors; 2.2.5 Recovery of By-Products; 2.3 Production of MG and UMG Silicon and Further Refining Up to Solar Grade by Chemical and Physical Processes; 2.3.1 MG Silicon Production; 2.3.2 Metallurgical Refining Processes
2.3.3 Metal-Metal Extraction Processes2.3.4 Solid/Liquid Extraction Techniques; 2.3.5 Final Purification by Directional Solidification; 2.3.6 Solar-Grade Silicon Production from Pure Raw Materials or Via the Direct Route; 2.4 Fluoride Processes; 2.5 Silicon Production/Refining with High-Temperature Plasmochemical Processes; 2.5.1 Silicon Production Via Plasma Processes; 2.5.2 Silicon Refining Via Plasma Processes; 2.6 Electrochemical Processes: Production of Silicon Without Carbon as Reductant; 2.7 Conclusions; Acknowledgements; References; Chapter 3 Role of Impurities in Solar Silicon
3.1 Introduction3.2 Sources and Refinements of Impurities; 3.3 Segregation of Impurities During Silicon Growth; 3.3.1 Equilibrium Segregation Coefficients; 3.3.2 Effective Segregation Coefficient; 3.3.3 Distribution of Impurities in Silicon Crystal Due to Segregation; 3.4 Role of Metallic Impurities; 3.4.1 Solubility and Diffusivity; 3.4.2 Impact on Charge-Carrier Recombination; 3.4.3 Modeling the Impact of Metallic Impurities on the Solar-Cell Performance; 3.5 Role of Dopants; 3.5.1 Carrier Mobilities in Compensated Silicon; 3.5.2 Recombination in Compensated Silicon
3.5.3 Dopant-Related Recombination Centers3.5.4 Segregation Effects During Ingot Growth; 3.5.5 Detecting Dopants in Compensated Silicon; 3.6 Role of Light Elements; 3.6.1 Oxygen; 3.6.2 Carbon; 3.6.3 Nitrogen; 3.6.4 Germanium; 3.7 Arriving at Solar-Grade Silicon Feedstock Definitions; References; Chapter 4 Gettering Processes and the Role of Extended Defects; 4.1 Introduction; 4.2 Properties of Transition-Metal Impurities in Silicon; 4.2.1 Solubility of Transition-Metal Impurities; 4.2.2 Diffusion of Transition-Metal Impurities; 4.3 Gettering Mechanisms and their Modeling
4.3.1 Segregation Gettering
Record Nr. UNINA-9910141263703321
Pizzini Sergio  
Hoboken, : Wiley, 2012
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Advanced Silicon Materials for Photovoltaic Applications [[electronic resource]]
Advanced Silicon Materials for Photovoltaic Applications [[electronic resource]]
Autore Pizzini Sergio
Edizione [1st ed.]
Pubbl/distr/stampa Hoboken, : Wiley, 2012
Descrizione fisica 1 online resource (423 p.)
Disciplina 621.3815/42
621.381542
Soggetto topico Photovoltaic cells - Materials
Photovoltaic cells -- Materials
Silicon solar cells
Silicon solar cells - Materials
Photovoltaic cells
Electrical & Computer Engineering
Engineering & Applied Sciences
Electrical Engineering
ISBN 1-118-31216-3
1-280-69946-9
9786613676443
1-118-31207-4
1-118-31219-8
1-118-31218-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Advanced Silicon Materials for Photovoltaic Applications; Contents; Preface; List of Contributors; Chapter 1 Silicon Science and Technology as the Background of the Current and Future Knowledge Society; 1.1 Introduction; 1.2 Silicon Birth from a Thermonuclear Nucleosynthetic Process; 1.3 Silicon Key Properties; 1.3.1 Chemical and Structural Properties; 1.3.2 Point Defects; 1.3.3 Radiation Damage and Radiation Hardness; 1.4 Advanced Silicon Applications; 1.4.1 Silicon Radiation Detectors; 1.4.2 Photovoltaic Cells for Space Vehicles and Satellite Applications
1.4.3 Advanced Components Based on the Dislocation oxLuminescence in Silicon1.4.4 Silicon Nanostructures; References; Chapter 2 Processes; 2.1 Introduction; 2.2 Gas-Phase Processes; 2.2.1 Preparation and Synthesis of Volatile Silicon Compounds; 2.2.2 Purification of Volatile Silicon Compounds; 2.2.3 Decomposition of Volatile Precursors to Elemental Silicon; 2.2.4 Most Common Reactors; 2.2.5 Recovery of By-Products; 2.3 Production of MG and UMG Silicon and Further Refining Up to Solar Grade by Chemical and Physical Processes; 2.3.1 MG Silicon Production; 2.3.2 Metallurgical Refining Processes
2.3.3 Metal-Metal Extraction Processes2.3.4 Solid/Liquid Extraction Techniques; 2.3.5 Final Purification by Directional Solidification; 2.3.6 Solar-Grade Silicon Production from Pure Raw Materials or Via the Direct Route; 2.4 Fluoride Processes; 2.5 Silicon Production/Refining with High-Temperature Plasmochemical Processes; 2.5.1 Silicon Production Via Plasma Processes; 2.5.2 Silicon Refining Via Plasma Processes; 2.6 Electrochemical Processes: Production of Silicon Without Carbon as Reductant; 2.7 Conclusions; Acknowledgements; References; Chapter 3 Role of Impurities in Solar Silicon
3.1 Introduction3.2 Sources and Refinements of Impurities; 3.3 Segregation of Impurities During Silicon Growth; 3.3.1 Equilibrium Segregation Coefficients; 3.3.2 Effective Segregation Coefficient; 3.3.3 Distribution of Impurities in Silicon Crystal Due to Segregation; 3.4 Role of Metallic Impurities; 3.4.1 Solubility and Diffusivity; 3.4.2 Impact on Charge-Carrier Recombination; 3.4.3 Modeling the Impact of Metallic Impurities on the Solar-Cell Performance; 3.5 Role of Dopants; 3.5.1 Carrier Mobilities in Compensated Silicon; 3.5.2 Recombination in Compensated Silicon
3.5.3 Dopant-Related Recombination Centers3.5.4 Segregation Effects During Ingot Growth; 3.5.5 Detecting Dopants in Compensated Silicon; 3.6 Role of Light Elements; 3.6.1 Oxygen; 3.6.2 Carbon; 3.6.3 Nitrogen; 3.6.4 Germanium; 3.7 Arriving at Solar-Grade Silicon Feedstock Definitions; References; Chapter 4 Gettering Processes and the Role of Extended Defects; 4.1 Introduction; 4.2 Properties of Transition-Metal Impurities in Silicon; 4.2.1 Solubility of Transition-Metal Impurities; 4.2.2 Diffusion of Transition-Metal Impurities; 4.3 Gettering Mechanisms and their Modeling
4.3.1 Segregation Gettering
Record Nr. UNINA-9910808006703321
Pizzini Sergio  
Hoboken, : Wiley, 2012
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
Autore Scheer Roland
Pubbl/distr/stampa Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011
Descrizione fisica 1 online resource (386 p.)
Disciplina 621.31244
Altri autori (Persone) SchockH. W (Hans-Werner)
Soggetto topico Photovoltaic cells - Materials
Chalcogenides
Compound semiconductors
Soggetto genere / forma Electronic books.
ISBN 1-283-30246-2
9786613302465
3-527-63371-5
3-527-63370-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Chalcogenide Photovoltaics; Contents; Preface; Symbols and Acronyms; 1 Introduction; 1.1 History of Cu(In,Ga)(S,Se)2 Solar Cells; 1.1.1 Milestones of Cu(In,Ga)(S,Se)2 Development; 1.2 History of CdTe Solar Cells; 1.2.1 Milestones of CdTe Development; 1.3 Prospects of Chalcogenide Photovoltaics; 2 Thin Film Heterostructures; 2.1 Energies and Potentials; 2.2 Charge Densities and Fluxes; 2.3 Energy Band Diagrams; 2.3.1 Rules and Conventions; 2.3.2 Absorber/Window; 2.3.3 Absorber/Buffer/Window; 2.3.4 Interface States; 2.3.5 Interface Dipoles; 2.3.6 Deep Bulk States; 2.3.7 Bandgap Gradients
2.4 Diode Currents2.4.1 Superposition Principle and Shifting Approximation; 2.4.2 Regions of Recombination; 2.4.3 Radiative Recombination; 2.4.4 Auger Recombination; 2.4.5 Defect Related Recombination; 2.4.5.1 SCR Recombination; 2.4.5.2 QNR Recombination; 2.4.5.3 Back Surface Recombination; 2.4.5.4 Interface Recombination; 2.4.6 Parallel Processes; 2.4.6.1 SCR and QNR Recombination; 2.4.6.2 SCR and IF Recombination; 2.4.7 Barriers for Diode Current; 2.4.8 Bias Dependence; 2.4.9 Non-Homogeneities; 2.5 Light Generated Currents; 2.5.1 Generation Currents; 2.5.2 Generation Function
2.5.3 Photo Current2.5.4 Collection Function; 2.5.4.1 Absorber Quasi Neutral Region; 2.5.4.2 QNR with Graded Bandgap; 2.5.4.3 QNR with Back Surface Field; 2.5.4.4 Absorber Space Charge Region; 2.5.4.5 Buffer Layer; 2.5.4.6 Simulating the Collection Function; 2.5.5 Quantum Efficiency and Charge Collection Efficiency; 2.5.6 Barriers for Photo Current; 2.5.7 Voltage Dependence of Photo Current; 2.5.7.1 Width of SCR; 2.5.7.2 Interface Recombination; 2.5.7.3 Photo Current Barriers; 2.6 Device Analysis and Parameters; 2.6.1 Equivalent Circuits; 2.6.1.1 DC Equivalent Circuit
2.6.1.2 AC Equivalent Circuit2.6.1.3 Module Equivalent Circuit; 2.6.2 Current-Voltage Analysis; 2.6.2.1 External Collection Efficiency; 2.6.2.2 Diode Parameters; 2.6.2.3 Open Circuit Voltage; 2.6.2.4 Fill Factor; 2.6.3 Capacitance-Voltage Analysis; 2.6.4 Admittance Spectroscopy; 3 Design Rules for Heterostructure Solar Cells and Modules; 3.1 Absorber Bandgap; 3.2 Band Alignment; 3.3 Emitter Doping and Doping Ratio; 3.4 Fermi Level Pinning; 3.5 Absorber Doping; 3.6 Absorber Thickness; 3.7 Grain Boundaries; 3.8 Back Contact Barrier; 3.9 Buffer Thickness; 3.10 Front Surface Gradient
3.11 Back Surface Gradients3.12 Monolithic Series Interconnection; 4 Thin Film Material Properties; 4.1 AII-BVI Absorbers; 4.1.1 Physico-Chemical Properties; 4.1.2 Lattice Dynamics; 4.1.3 Electronic Properties; 4.1.3.1 Practical Doping Limits; 4.1.3.2 Defect Spectroscopy; 4.1.3.3 Minority Carrier Lifetime; 4.1.4 Optical Properties; 4.1.4.1 CdTe; 4.1.4.2 Multinary Phases; 4.1.5 Surface Properties; 4.1.6 Properties of Grain Boundaries; 4.2 AI-BIII-CVI 2 Absorbers; 4.2.1 Physico-Chemical Properties; 4.2.1.1 Ternary Phase Diagrams; 4.2.1.2 Multinary Phases; 4.2.1.3 Diffusion Coefficients
4.2.2 Lattice Dynamics
Record Nr. UNINA-9910130882403321
Scheer Roland  
Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
Autore Scheer Roland
Pubbl/distr/stampa Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011
Descrizione fisica 1 online resource (386 p.)
Disciplina 621.31244
Altri autori (Persone) SchockH. W (Hans-Werner)
Soggetto topico Photovoltaic cells - Materials
Chalcogenides
Compound semiconductors
ISBN 1-283-30246-2
9786613302465
3-527-63371-5
3-527-63370-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Chalcogenide Photovoltaics; Contents; Preface; Symbols and Acronyms; 1 Introduction; 1.1 History of Cu(In,Ga)(S,Se)2 Solar Cells; 1.1.1 Milestones of Cu(In,Ga)(S,Se)2 Development; 1.2 History of CdTe Solar Cells; 1.2.1 Milestones of CdTe Development; 1.3 Prospects of Chalcogenide Photovoltaics; 2 Thin Film Heterostructures; 2.1 Energies and Potentials; 2.2 Charge Densities and Fluxes; 2.3 Energy Band Diagrams; 2.3.1 Rules and Conventions; 2.3.2 Absorber/Window; 2.3.3 Absorber/Buffer/Window; 2.3.4 Interface States; 2.3.5 Interface Dipoles; 2.3.6 Deep Bulk States; 2.3.7 Bandgap Gradients
2.4 Diode Currents2.4.1 Superposition Principle and Shifting Approximation; 2.4.2 Regions of Recombination; 2.4.3 Radiative Recombination; 2.4.4 Auger Recombination; 2.4.5 Defect Related Recombination; 2.4.5.1 SCR Recombination; 2.4.5.2 QNR Recombination; 2.4.5.3 Back Surface Recombination; 2.4.5.4 Interface Recombination; 2.4.6 Parallel Processes; 2.4.6.1 SCR and QNR Recombination; 2.4.6.2 SCR and IF Recombination; 2.4.7 Barriers for Diode Current; 2.4.8 Bias Dependence; 2.4.9 Non-Homogeneities; 2.5 Light Generated Currents; 2.5.1 Generation Currents; 2.5.2 Generation Function
2.5.3 Photo Current2.5.4 Collection Function; 2.5.4.1 Absorber Quasi Neutral Region; 2.5.4.2 QNR with Graded Bandgap; 2.5.4.3 QNR with Back Surface Field; 2.5.4.4 Absorber Space Charge Region; 2.5.4.5 Buffer Layer; 2.5.4.6 Simulating the Collection Function; 2.5.5 Quantum Efficiency and Charge Collection Efficiency; 2.5.6 Barriers for Photo Current; 2.5.7 Voltage Dependence of Photo Current; 2.5.7.1 Width of SCR; 2.5.7.2 Interface Recombination; 2.5.7.3 Photo Current Barriers; 2.6 Device Analysis and Parameters; 2.6.1 Equivalent Circuits; 2.6.1.1 DC Equivalent Circuit
2.6.1.2 AC Equivalent Circuit2.6.1.3 Module Equivalent Circuit; 2.6.2 Current-Voltage Analysis; 2.6.2.1 External Collection Efficiency; 2.6.2.2 Diode Parameters; 2.6.2.3 Open Circuit Voltage; 2.6.2.4 Fill Factor; 2.6.3 Capacitance-Voltage Analysis; 2.6.4 Admittance Spectroscopy; 3 Design Rules for Heterostructure Solar Cells and Modules; 3.1 Absorber Bandgap; 3.2 Band Alignment; 3.3 Emitter Doping and Doping Ratio; 3.4 Fermi Level Pinning; 3.5 Absorber Doping; 3.6 Absorber Thickness; 3.7 Grain Boundaries; 3.8 Back Contact Barrier; 3.9 Buffer Thickness; 3.10 Front Surface Gradient
3.11 Back Surface Gradients3.12 Monolithic Series Interconnection; 4 Thin Film Material Properties; 4.1 AII-BVI Absorbers; 4.1.1 Physico-Chemical Properties; 4.1.2 Lattice Dynamics; 4.1.3 Electronic Properties; 4.1.3.1 Practical Doping Limits; 4.1.3.2 Defect Spectroscopy; 4.1.3.3 Minority Carrier Lifetime; 4.1.4 Optical Properties; 4.1.4.1 CdTe; 4.1.4.2 Multinary Phases; 4.1.5 Surface Properties; 4.1.6 Properties of Grain Boundaries; 4.2 AI-BIII-CVI 2 Absorbers; 4.2.1 Physico-Chemical Properties; 4.2.1.1 Ternary Phase Diagrams; 4.2.1.2 Multinary Phases; 4.2.1.3 Diffusion Coefficients
4.2.2 Lattice Dynamics
Record Nr. UNINA-9910829904203321
Scheer Roland  
Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
Autore Scheer Roland
Pubbl/distr/stampa Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011
Descrizione fisica 1 online resource (386 p.)
Disciplina 621.31244
Altri autori (Persone) SchockH. W (Hans-Werner)
Soggetto topico Photovoltaic cells - Materials
Chalcogenides
Compound semiconductors
ISBN 1-283-30246-2
9786613302465
3-527-63371-5
3-527-63370-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Chalcogenide Photovoltaics; Contents; Preface; Symbols and Acronyms; 1 Introduction; 1.1 History of Cu(In,Ga)(S,Se)2 Solar Cells; 1.1.1 Milestones of Cu(In,Ga)(S,Se)2 Development; 1.2 History of CdTe Solar Cells; 1.2.1 Milestones of CdTe Development; 1.3 Prospects of Chalcogenide Photovoltaics; 2 Thin Film Heterostructures; 2.1 Energies and Potentials; 2.2 Charge Densities and Fluxes; 2.3 Energy Band Diagrams; 2.3.1 Rules and Conventions; 2.3.2 Absorber/Window; 2.3.3 Absorber/Buffer/Window; 2.3.4 Interface States; 2.3.5 Interface Dipoles; 2.3.6 Deep Bulk States; 2.3.7 Bandgap Gradients
2.4 Diode Currents2.4.1 Superposition Principle and Shifting Approximation; 2.4.2 Regions of Recombination; 2.4.3 Radiative Recombination; 2.4.4 Auger Recombination; 2.4.5 Defect Related Recombination; 2.4.5.1 SCR Recombination; 2.4.5.2 QNR Recombination; 2.4.5.3 Back Surface Recombination; 2.4.5.4 Interface Recombination; 2.4.6 Parallel Processes; 2.4.6.1 SCR and QNR Recombination; 2.4.6.2 SCR and IF Recombination; 2.4.7 Barriers for Diode Current; 2.4.8 Bias Dependence; 2.4.9 Non-Homogeneities; 2.5 Light Generated Currents; 2.5.1 Generation Currents; 2.5.2 Generation Function
2.5.3 Photo Current2.5.4 Collection Function; 2.5.4.1 Absorber Quasi Neutral Region; 2.5.4.2 QNR with Graded Bandgap; 2.5.4.3 QNR with Back Surface Field; 2.5.4.4 Absorber Space Charge Region; 2.5.4.5 Buffer Layer; 2.5.4.6 Simulating the Collection Function; 2.5.5 Quantum Efficiency and Charge Collection Efficiency; 2.5.6 Barriers for Photo Current; 2.5.7 Voltage Dependence of Photo Current; 2.5.7.1 Width of SCR; 2.5.7.2 Interface Recombination; 2.5.7.3 Photo Current Barriers; 2.6 Device Analysis and Parameters; 2.6.1 Equivalent Circuits; 2.6.1.1 DC Equivalent Circuit
2.6.1.2 AC Equivalent Circuit2.6.1.3 Module Equivalent Circuit; 2.6.2 Current-Voltage Analysis; 2.6.2.1 External Collection Efficiency; 2.6.2.2 Diode Parameters; 2.6.2.3 Open Circuit Voltage; 2.6.2.4 Fill Factor; 2.6.3 Capacitance-Voltage Analysis; 2.6.4 Admittance Spectroscopy; 3 Design Rules for Heterostructure Solar Cells and Modules; 3.1 Absorber Bandgap; 3.2 Band Alignment; 3.3 Emitter Doping and Doping Ratio; 3.4 Fermi Level Pinning; 3.5 Absorber Doping; 3.6 Absorber Thickness; 3.7 Grain Boundaries; 3.8 Back Contact Barrier; 3.9 Buffer Thickness; 3.10 Front Surface Gradient
3.11 Back Surface Gradients3.12 Monolithic Series Interconnection; 4 Thin Film Material Properties; 4.1 AII-BVI Absorbers; 4.1.1 Physico-Chemical Properties; 4.1.2 Lattice Dynamics; 4.1.3 Electronic Properties; 4.1.3.1 Practical Doping Limits; 4.1.3.2 Defect Spectroscopy; 4.1.3.3 Minority Carrier Lifetime; 4.1.4 Optical Properties; 4.1.4.1 CdTe; 4.1.4.2 Multinary Phases; 4.1.5 Surface Properties; 4.1.6 Properties of Grain Boundaries; 4.2 AI-BIII-CVI 2 Absorbers; 4.2.1 Physico-Chemical Properties; 4.2.1.1 Ternary Phase Diagrams; 4.2.1.2 Multinary Phases; 4.2.1.3 Diffusion Coefficients
4.2.2 Lattice Dynamics
Record Nr. UNINA-9910841650303321
Scheer Roland  
Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Combinatorial optimization of transparent conducting oxides (TCOs) for PV [[electronic resource] /] / J.D. Perkins ... [and others]
Combinatorial optimization of transparent conducting oxides (TCOs) for PV [[electronic resource] /] / J.D. Perkins ... [and others]
Pubbl/distr/stampa Golden, Colo. : , : National Renewable Energy Laboratory, , [2005]
Descrizione fisica 1 volume : digital, PDF file
Altri autori (Persone) PerkinsJohn D (John Dillard)
Collana Conference paper
Soggetto topico Photovoltaic cells - Materials
Oxides - Electric properties
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Combinatorial Optimization of Transparent Conducting Oxides
Record Nr. UNINA-9910698274403321
Golden, Colo. : , : National Renewable Energy Laboratory, , [2005]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Copper zinc tin sulphide-based thin film solar cells / / edited by Kentaro Ito
Copper zinc tin sulphide-based thin film solar cells / / edited by Kentaro Ito
Pubbl/distr/stampa Chichester, England : , : Wiley, , 2015
Descrizione fisica 1 online resource (452 p.)
Disciplina 621.31/244
Soggetto topico Photovoltaic cells - Materials
Solar cells - Materials
Copper-zinc alloys
Thin film devices
ISBN 1-118-43786-1
1-118-43785-3
1-118-43784-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Title Page; Copyright Page; Contents; Preface; List of Contributors; Part I Introduction; Chapter 1 An Overview of CZTS-Based Thin-Film Solar Cells; 1.1 Introduction; 1.2 The Photovoltaic Effect; 1.3 In Pursuit of an Optimal Semiconductor for Photovoltaics; 1.4 Conclusions; Acknowledgements; References; Chapter 2 Market Challenges for CZTS-Based Thin-Film Solar Cells; 2.1 Introduction; 2.2 Compound Thin-Film Technologies and Manufacturing; 2.3 Challenges for CZTS Solar Cells in the Market; 2.4 Conclusion; References; Part II The Physics and Chemistry of Quaternary Chalcogenide Semiconductors
Chapter 3 Crystallographic Aspects of Cu2ZnSnS4 (CZTS)3.1 Introduction: What Defines a Crystal Structure?; 3.2 The Crystal Structure of CZTS; 3.3 Point Defects in CZTS and the Role of Stoichiometry; 3.4 Differentiation between Intergrown Kesterite- and Stannite-Type Phases: A Simulational Approach; 3.5 Summary; References; Chapter 4 Electronic Structure and Optical Properties from First-Principles Modeling; 4.1 Introduction; 4.2 Computational Background; 4.3 Crystal Structure; 4.4 Electronic Structure; 4.5 Optical Properties; 4.6 Summary; Acknowledgements; References
Chapter 5 Kesterites: Equilibria and Secondary Phase Identification5.1 Introduction; 5.2 Chemistry of the Kesterite Reaction; 5.3 Phase Identification; Acknowledgements; References; Chapter 6 Growth of CZTS Single Crystals; 6.1 Introduction; 6.2 Growth Process; 6.3 Properties of CZTS Single Crystals; 6.4 Conclusion; Acknowledgements; References; Chapter 7 Physical Properties: Compiled Experimental Data; 7.1 Introduction; 7.2 Structural Properties; 7.3 Thermal Properties; 7.4 Mechanical and Lattice Dynamic Properties; 7.5 Electronic Energy-Band Structure; 7.6 Optical Properties
7.7 Carrier Transport PropertiesReferences; Part III Synthesis of Thin Films and Their Application to Solar Cells; Chapter 8 Sulfurization of Physical Vapor-Deposited Precursor Layers; 8.1 Introduction; 8.2 First CZTS Thin-Film Solar Cells; 8.3 ZnS as Zn-Source in Precursor; 8.4 Influence of Absorber Thickness; 8.5 New Sulfurization System; 8.6 Influence of Morphology; 8.7 Co-Sputtering System with Annealing Chamber; 8.8 Active Composition; 8.9 CZTS Compound Target; 8.10 Conclusions; References; Chapter 9 Reactive Sputtering of CZTS; 9.1 Introduction; 9.2 The Reactive Sputtering Process
9.3 Properties of Sputtered Precursors9.4 Annealing of Sputtered Precursors; 9.5 Device Performance; 9.6 Summary; References; Chapter 10 Coevaporation of CZTS Films and Solar Cells; 10.1 Introduction; 10.2 Basic Principles; 10.3 Process Variations; Acknowledgements; References; Chapter 11 Synthesis of CZTSSe Thin Films from Nanocrystal Inks; 11.1 Introduction; 11.2 Nanocrystal Synthesis; 11.3 Nanocrystal Characterization; 11.4 Sintering; 11.5 Conclusion; References; Chapter 12 CZTS Thin Films Prepared by a Non-Vacuum Process; 12.1 Introduction; 12.2 Sol-Gel Sulfurization Method
12.3 Preparation of CZTS Thin Films by Sol-Gel Sulfurization Method
Record Nr. UNINA-9910132308603321
Chichester, England : , : Wiley, , 2015
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Copper zinc tin sulphide-based thin film solar cells / / edited by Kentaro Ito
Copper zinc tin sulphide-based thin film solar cells / / edited by Kentaro Ito
Pubbl/distr/stampa Chichester, England : , : Wiley, , 2015
Descrizione fisica 1 online resource (452 p.)
Disciplina 621.31/244
Soggetto topico Photovoltaic cells - Materials
Solar cells - Materials
Copper-zinc alloys
Thin film devices
ISBN 1-118-43786-1
1-118-43785-3
1-118-43784-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Title Page; Copyright Page; Contents; Preface; List of Contributors; Part I Introduction; Chapter 1 An Overview of CZTS-Based Thin-Film Solar Cells; 1.1 Introduction; 1.2 The Photovoltaic Effect; 1.3 In Pursuit of an Optimal Semiconductor for Photovoltaics; 1.4 Conclusions; Acknowledgements; References; Chapter 2 Market Challenges for CZTS-Based Thin-Film Solar Cells; 2.1 Introduction; 2.2 Compound Thin-Film Technologies and Manufacturing; 2.3 Challenges for CZTS Solar Cells in the Market; 2.4 Conclusion; References; Part II The Physics and Chemistry of Quaternary Chalcogenide Semiconductors
Chapter 3 Crystallographic Aspects of Cu2ZnSnS4 (CZTS)3.1 Introduction: What Defines a Crystal Structure?; 3.2 The Crystal Structure of CZTS; 3.3 Point Defects in CZTS and the Role of Stoichiometry; 3.4 Differentiation between Intergrown Kesterite- and Stannite-Type Phases: A Simulational Approach; 3.5 Summary; References; Chapter 4 Electronic Structure and Optical Properties from First-Principles Modeling; 4.1 Introduction; 4.2 Computational Background; 4.3 Crystal Structure; 4.4 Electronic Structure; 4.5 Optical Properties; 4.6 Summary; Acknowledgements; References
Chapter 5 Kesterites: Equilibria and Secondary Phase Identification5.1 Introduction; 5.2 Chemistry of the Kesterite Reaction; 5.3 Phase Identification; Acknowledgements; References; Chapter 6 Growth of CZTS Single Crystals; 6.1 Introduction; 6.2 Growth Process; 6.3 Properties of CZTS Single Crystals; 6.4 Conclusion; Acknowledgements; References; Chapter 7 Physical Properties: Compiled Experimental Data; 7.1 Introduction; 7.2 Structural Properties; 7.3 Thermal Properties; 7.4 Mechanical and Lattice Dynamic Properties; 7.5 Electronic Energy-Band Structure; 7.6 Optical Properties
7.7 Carrier Transport PropertiesReferences; Part III Synthesis of Thin Films and Their Application to Solar Cells; Chapter 8 Sulfurization of Physical Vapor-Deposited Precursor Layers; 8.1 Introduction; 8.2 First CZTS Thin-Film Solar Cells; 8.3 ZnS as Zn-Source in Precursor; 8.4 Influence of Absorber Thickness; 8.5 New Sulfurization System; 8.6 Influence of Morphology; 8.7 Co-Sputtering System with Annealing Chamber; 8.8 Active Composition; 8.9 CZTS Compound Target; 8.10 Conclusions; References; Chapter 9 Reactive Sputtering of CZTS; 9.1 Introduction; 9.2 The Reactive Sputtering Process
9.3 Properties of Sputtered Precursors9.4 Annealing of Sputtered Precursors; 9.5 Device Performance; 9.6 Summary; References; Chapter 10 Coevaporation of CZTS Films and Solar Cells; 10.1 Introduction; 10.2 Basic Principles; 10.3 Process Variations; Acknowledgements; References; Chapter 11 Synthesis of CZTSSe Thin Films from Nanocrystal Inks; 11.1 Introduction; 11.2 Nanocrystal Synthesis; 11.3 Nanocrystal Characterization; 11.4 Sintering; 11.5 Conclusion; References; Chapter 12 CZTS Thin Films Prepared by a Non-Vacuum Process; 12.1 Introduction; 12.2 Sol-Gel Sulfurization Method
12.3 Preparation of CZTS Thin Films by Sol-Gel Sulfurization Method
Record Nr. UNINA-9910814974003321
Chichester, England : , : Wiley, , 2015
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui