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Deep diode arrays for X-ray detection / / principal investigator, Jay N. Zemel
| Deep diode arrays for X-ray detection / / principal investigator, Jay N. Zemel |
| Autore | Zemel Jay N. |
| Pubbl/distr/stampa | Philadelphia, Pa. : , : University of Pennsylvania, The Moore School of Electrical Engineering |
| Descrizione fisica | 1 online resource (4 unnumbered pages, 83 pages) : illustrations |
| Collana | NASA CR |
| Soggetto topico |
P-n junctions
Temperature gradients X ray spectroscopy Diodes Energy spectra |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910702696803321 |
Zemel Jay N.
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| Philadelphia, Pa. : , : University of Pennsylvania, The Moore School of Electrical Engineering | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Fast risetime reverse bias pulse failures in SiC PN junction diodes / / Philip G. Nuedeck, Christian Faziz, James D. Parsons
| Fast risetime reverse bias pulse failures in SiC PN junction diodes / / Philip G. Nuedeck, Christian Faziz, James D. Parsons |
| Autore | Nuedeck Philip G. |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Lewis Research Center, , June 1996 |
| Descrizione fisica | 1 online resource (6 pages) : illustrations |
| Collana | NASA technical memorandum |
| Soggetto topico |
P-n junctions
Semiconductors (materials) Silicon carbides High temperature environments Bias Doped crystals Energy gaps (solid state) |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910707379203321 |
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Nuedeck Philip G.
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| Cleveland, Ohio : , : National Aeronautics and Space Administration, Lewis Research Center, , June 1996 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C [[electronic resource] /] / Janis M. Niedra, Gene E. Schwarze ; prepared for the Third International Energy Conversion Engineering Conference sponsored by the American Institute of Aeronautics and Astronautics, San Francisco, California, August 15-18, 2005
| Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C [[electronic resource] /] / Janis M. Niedra, Gene E. Schwarze ; prepared for the Third International Energy Conversion Engineering Conference sponsored by the American Institute of Aeronautics and Astronautics, San Francisco, California, August 15-18, 2005 |
| Autore | Niedra Janis M |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2005] |
| Descrizione fisica | 1 online resource (9 pages) : illustrations |
| Altri autori (Persone) | SchwarzeGene E |
| Collana | NASA/TM- |
| Soggetto topico |
Static characteristics
Silicon carbides Transistors Switching Electric potential P-n junctions |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910697164203321 |
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Niedra Janis M
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| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2005] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Soggetto topico
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P-n junctions
(3)
- Silicon carbides (2)
- Bias (1)
- Diodes (1)
- Doped crystals (1)