Advantages of oxide films as bases for aluminum pigmented surface coatings for aluminum alloys / / by R.W. Buzzard and W.H. Mutchler |
Autore | Buzzard R. W. |
Pubbl/distr/stampa | Washington, [D.C.] : , : National Advisory Committee for Aeronautics, , 1931 |
Descrizione fisica | 1 online resource (16 pages, 9 unnumbered pages) : illustrations |
Collana | Technical notes / National Advisory Committee for Aeronautics |
Soggetto topico |
Protective coatings
Aluminum alloys Oxides |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910713651603321 |
Buzzard R. W.
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Washington, [D.C.] : , : National Advisory Committee for Aeronautics, , 1931 | ||
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Lo trovi qui: Univ. Federico II | ||
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CaO-SiO2-Al2O3-Fe oxides chemical system : description and applications / / Francois Sorrentino, Denis Damidot, Charles Fentiman |
Autore | Sorrentino Francois |
Pubbl/distr/stampa | [Place of publication not identified] : , : EDP Sciences, , [2021] |
Descrizione fisica | 1 online resource (352 pages) |
Disciplina | 546.7212 |
Collana | Materials |
Soggetto topico | Oxides |
ISBN | 2-7598-2536-1 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | Front matter -- Preface -- Contents -- Part I Description of the CaO–SiO2–Al2O3–Fe Oxides Chemical System -- Chapter 1 One-Component Chemical Systems: CaO, SiO2, Al2O3 and Fe Oxides -- Chapter 2 Binary Chemical Systems -- Chapter 3 Ternary Chemical Systems -- Chapter 4 Quaternary Chemical Systems -- Chapter 5 Quinary Chemical Systems -- Part II Applications of the CaO–SiO2–Al2O3–Fe Oxides Chemical System -- Chapter 6 Applications to Hydraulic Binders -- Chapter 7 Application to Metal Refining -- Chapter 8 Application to Refractory Materials -- Chapter 9 Application of the Glassy Products -- Chapter 10 Application of Ceramic Products -- Chapter 11 Application as Fillers |
Record Nr. | UNINA-9910550489003321 |
Sorrentino Francois
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[Place of publication not identified] : , : EDP Sciences, , [2021] | ||
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Lo trovi qui: Univ. Federico II | ||
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Characterization of potential sources of magnetic anomalies within the crust in a tectonically active region [[electronic resource] ] : amphibolites and migmatites from Portillo Maar, New Mexico / / Frank S. Spear and Elaine Padovanni |
Autore | Spear Frank S |
Pubbl/distr/stampa | [Cambridge, Mass.] : , : [Massachusetts Institute of Technology] |
Descrizione fisica | 1 online resource (1 volumes (various pagings)) : digital, PDF file |
Altri autori (Persone) | PadovanniElaine |
Collana | NASA CR |
Soggetto topico |
Magnetic anomalies
Mineralogy New Mexico Oxides Petrology Rocks Tectonics |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Altri titoli varianti | Characterization of potential sources of magnetic anomalies within the crust in a tectonically active region |
Record Nr. | UNINA-9910700194103321 |
Spear Frank S
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[Cambridge, Mass.] : , : [Massachusetts Institute of Technology] | ||
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Lo trovi qui: Univ. Federico II | ||
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Gallium oxide : technology, devices and applications / / edited by Stephen Pearton, Fan Ren, Michael Mastro |
Pubbl/distr/stampa | Amsterdam, Netherlands : , : Elsevier, , [2018] |
Descrizione fisica | 1 online resource (481 pages) |
Disciplina | 621.38152 |
Collana | Metal oxides series |
Soggetto topico |
Gallium compounds
Oxides |
ISBN | 0-12-814522-6 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Front Cover -- Gallium Oxide: Technology, Devices and Applications -- Copyright -- Contents -- List of contributors -- Series editor's biography -- Editors biography -- Preface to the series -- Preface -- Part One: Growth technology of Ga2O3 -- Chapter 1: Progress in MOVPE growth of Ga2O3 -- 1.1. Introduction -- 1.2. Homoepitaxial deposition of β-Ga2O3 -- 1.3. Heteroepitaxial deposition of β-Ga2O3 -- 1.4. Heteroepitaxial deposition of -Ga2O3 -- References -- Chapter 2: MBE growth and characterization of gallium oxide -- 2.1. Introduction -- 2.2. MBE growth of Ga2O3 and materials characterization -- 2.2.1. Oxide MBE equipment considerations -- 2.2.2. Amorphous Ga2O3 for gate dielectrics -- 2.2.3. Heteroepitaxy of Ga2O3 -- 2.2.4. Homoepitaxy of Ga2O3 -- 2.2.4.1. Substrate selection -- 2.2.4.2. Substrate cleaning -- 2.2.4.3. MBE growth optimization -- Substrate temperature -- Ga and oxygen flux -- 2.2.5. Stabilizing metastable phases -- 2.2.5.1. Tin-assisted -Ga2O3 -- 2.2.5.2. Indium-assisted -Ga2O3 -- 2.3. Current status and future prospects -- 2.4. Summary -- Acknowledgments -- References -- Chapter 3: Properties of sputter-deposited gallium oxide -- 3.1. Introduction -- 3.2. Experimental -- 3.2.1. Film fabrication -- 3.2.2. Characterization -- 3.2.2.1. Rutherford backscattering spectroscopy (RBS) -- 3.2.2.2. X-ray photoelectron spectroscopy (XPS) -- 3.2.2.3. Grazing incidence X-ray diffraction (GIXRD) -- 3.2.2.4. UV-vis spectroscopy -- 3.2.2.5. Spectroscopic ellipsoemetry -- 3.2.2.6. Mechanical characterization -- 3.3. Results and discussion -- 3.3.1. Chemical composition -- 3.3.1.1. RBS -- 3.3.1.2. XPS -- 3.3.2. Crystal structure -- 3.3.3. Optical properties -- 3.3.3.1. Spectrophotometry -- 3.3.4. Mechanical properties -- 3.4. Summary and conclusions -- Acknowledgments -- References.
Chapter 4: Synthesis, optical characterization, and environmental applications of β-Ga2O3 nanowires -- 4.1. Introduction -- 4.2. Ambient controlled synthesis of β-Ga2O3 nanowires -- 4.3. Optical characterization of β-Ga2O3 nanowires -- 4.4. Photocatalytic property of β-Ga2O3 nanowires -- 4.5. Summary -- References -- Chapter 5: Growth, properties, and applications of β-Ga2O3 nanostructures -- 5.1. Introduction -- 5.2. Study of β-Ga2O3 nanostructures -- 5.2.1. β-Ga2O3 nanostructures using the CVD technique -- 5.2.2. β-Ga2O3 nanowires: Morphological and structural properties -- 5.2.3. Optical properties of β-Ga2O3 nanostructures -- 5.2.4. Application of β-Ga2O3 nanostructures -- 5.3. Functional nanowires based on β-Ga2O3 -- 5.3.1. Coaxial β-Ga2O3/GaN nanowires through ammonification of β-Ga2O3 nanowires -- 5.3.2. ZnGa2O4 nanowires through coaxial ZnO/β-Ga2O3 nanowires -- 5.3.3. β-Ga2O3 nanowires template mediated high-quality ultralong GaN nanowires -- 5.4. Conclusions and future perspective -- Acknowledgments -- References -- Part Two: Properties and Processing -- Chapter 6: Properties of (In,Ga)2O3 alloys -- 6.1. Introduction -- 6.2. Overview on crystal structures observed in (In,Ga)2O3 -- 6.3. Lattice parameters of bulk material -- 6.3.1. Rhombohedral (InxGa1-x)2O3 -- 6.3.2. Monoclinic β-(InxGa1-x)2O3 -- 6.3.3. Cubic (GaxIn1-x)2O3 -- 6.3.4. Hexagonal InGaO3 -- 6.4. Thin film growth -- 6.4.1. Growth of (In,Ga)2O3 thin films with lateral composition spread by PLD -- 6.4.2. Growth and phase formation of (In,Ga)2O3 thin films -- 6.5. Deep-UV absorption and band gap engineering -- 6.6. Phonon modes -- 6.7. Dielectric function and index of refraction -- 6.8. Schottky barrier diodes -- 6.9. Photodetectors -- 6.10. Summary and outlook -- References -- Further reading -- Chapter 7: Low-field and high-field transport in β-Ga2O3 -- 7.1. Introduction. 7.2. Electron-phonon interaction in β-Ga2O3 -- 7.2.1. Electron-LO phonon coupling -- 7.2.2. Electron-LO phonon-plasmon coupling -- 7.2.3. Short-range (nonpolar) electron-phonon coupling -- 7.3. Electron mobility in β-Ga2O3 -- 7.3.1. Bulk electron mobility -- 7.3.2. 2DEG mobility -- 7.4. Velocity-field curves in β-Ga2O3 -- 7.5. Summary -- Acknowledgments -- References -- Chapter 8: Electron paramagnetic resonance (EPR) from β-Ga2O3 crystals -- 8.1. Introduction -- 8.2. Crystal structure of β-Ga2O3 -- 8.3. Shallow donors and conduction electrons -- 8.4. Acceptors and self-trapped holes -- 8.4.1. Doubly ionized gallium vacancies -- 8.4.2. Neutral Mg acceptors -- 8.4.3. Self-trapped holes -- 8.5. Transition-metal and rare-earth ions -- 8.5.1. Cr3+ ions -- 8.5.2. Fe3+ ions -- 8.5.3. Mn2+ ions -- 8.5.4. Ti3+ ions -- 8.5.5. Er3+ ions -- 8.6. Oxygen vacancies -- Acknowledgments -- References -- Chapter 9: Hydrogen in Ga2O3 -- 9.1. Introduction -- 9.2. Hydrogen in the transparent conducting oxides ZnO, SnO2, and In2O3 -- 9.3. Hydrogen in β-Ga2O3 -- 9.3.1. Theory -- 9.3.2. Thermal stability of deuterium in Ga2O3 -- 9.3.3. Muon spin resonance -- 9.3.4. Vibrational properties of H in Ga2O3 -- 9.3.4.1. Vibrational spectroscopy -- 9.3.4.2. Evidence for a ``hidden hydrogen´´ species -- 9.3.4.3. Theory of defect structures and their vibrational properties -- 9.3.4.4. Additional IR lines -- 9.4. Conclusion -- Acknowlegments -- References -- Chapter 10: Ohmic contacts to gallium oxide -- 10.1 Introduction -- 10.2 Ohmic contacts and contact resistance -- 10.3 Ohmic contacts to gallium oxide -- 10.4 Development of Ohmic contacts for Ga2O3 microelectronics -- 10.5 Research opportunities for Ohmic contacts to Ga2O3 -- Acknowledgment -- References -- Chapter 11: Schottky contacts to β-Ga2O3 -- Chapter Outline -- 11.1. Introduction. 11.2. Physics of Schottky contacts and SBH measurements -- 11.2.1. Physics of Schottky contacts -- 11.2.2. Shottky Barrier Height measurements -- 11.2.2.1. phiB calculation from I-V measurements -- 11.2.2.2. phiB calculation from I-V-T measurements (Richardson plot) -- 11.2.2.3. phiB calculation from C-V measurements -- 11.2.2.4. phiB calculation from IPE measurements -- 11.3. Properties of Ga2O3 for SBDs -- 11.4. Schottky contacts on β-Ga2O3: Materials and processing -- 11.5. Defects relevant to β-Ga2O3 Schottky contacts -- 11.5.1. Point defects and impurities -- 11.5.2. Extended crystallographic defects -- 11.5.3. Defect states in the band gap -- 11.6. Nonideal and inhomogeneous Schottky barriers -- 11.7. β-Ga2O3 Schottky devices -- 11.7.1. SBDs as rectifiers -- 11.7.2. Metal-semiconductor field-effect transistors -- 11.8. Summary -- Acknowledgments -- References -- Chapter 12: Dry etching of Ga2O3 -- 12.1. Introduction -- 12.2. Dry etching -- 12.2.1. Mechanisms of dry etching -- 12.3. Dry etching techniques -- 12.4. Etch results for Ga2O3 -- 12.4.1. Etch rates -- 12.4.2. Damage induced by dry etching -- 12.5. Summary -- Acknowledgments -- References -- Chapter 13: Band alignments of dielectrics on (-201) β-Ga2O3 -- 13.1. Introduction -- 13.2. Methods -- 13.2.1. Determination of bandgap -- 13.2.2. Determination of band offset -- 13.3. Band offsets -- 13.3.1. Aluminum oxide -- 13.3.2. Lanthanum aluminate -- 13.3.3. SiO2 and HfSiO4 -- 13.3.4. Indium tin oxide -- 13.3.5. Aluminum zinc oxide (AZO) -- 13.4. Conclusion -- References -- Chapter 14: Radiation damage in Ga2O3 -- 14.1. Introduction -- 14.2. Radiation damage in wide bandgap semiconductors -- 14.3. Properties of Ga2O3 -- 14.4. Radiation damage effects in Ga2O3 -- 14.5. Summary and conclusion -- Acknowledgments -- References -- Part Three: Applications -- Chapter 15: Ga2O3 nanobelt devices. 15.1. Introduction -- 15.1.1. Bottom-up methods -- 15.1.2. Top-down methods -- 15.2. β-Ga2O3-based optoelectronic nanodevice -- 15.2.1. Introduction of β-Ga2O3-based optoelectronic nanodevice -- 15.2.2. Development of β-Ga2O3-based photodetectors -- 15.2.2.1. Photoconductive detectors -- 15.2.2.2. Metal-semiconductor-metal (MSM) structure -- 15.2.2.3. Photovoltaic structure -- 15.3. β-Ga2O3-based nanoelectronic devices -- 15.3.1. Introduction of β-Ga2O3 nanobelt-based transistors -- 15.3.2. Development of β-Ga2O3 nanobelt-based transistors -- 15.3.2.1. Back-gated FETs -- 15.3.2.2. Top-gated FETs -- 15.3.2.3. Heterostructure MISFETs -- 15.4. Summary -- References -- Chapter 16: Advances in Ga2O3 solar-blind UV photodetectors -- 16.1. Introduction -- 16.1.1. The UV spectrum -- 16.1.2. Applications: UV spectrum -- 16.1.3. Ga2O3-Background -- 16.2. Figures of merit for photodetectors -- 16.2.1. Quantum efficiency and spectral responsivity -- 16.2.2. Bandwidth, rise/fall times, and persistent photoconductivity -- 16.2.3. Noise equivalent power and specific detectivity -- 16.2.4. UV-to-visible rejection ratio -- 16.2.5. Linearity -- 16.3. β-Ga2O3 UV photodetectors: Types, operational principles, and status -- 16.3.1. Metal-semiconductor-metal photodetectors -- 16.3.2. Schottky photodetectors -- 16.4. Gain mechanism and barrier height calculation -- 16.5. Comparison with AlGaN deep-UV photodetectors -- 16.6. Design consideration, possible geometries, and arrays of detectors for deep UV detection -- 16.7. Summary, conclusion/future work -- References -- Chapter 17: Power MOSFETs and diodes -- 17.1. Introduction -- 17.2. Properties -- 17.3. Schottky diodes -- 17.4. Power MOSFETs -- 17.5. Application space and competing technologies -- 17.6. Future -- References -- Chapter 18: Ga2O3-photoassisted decomposition of insecticides -- 18.1. Introduction. 18.2. Photochemical and photocatalytic degradation reactions. |
Record Nr. | UNINA-9910583355203321 |
Amsterdam, Netherlands : , : Elsevier, , [2018] | ||
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Lo trovi qui: Univ. Federico II | ||
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High temperature oxides . Part IV Refractory glasses, glass-ceramics, and ceramics / / editor, Allen M. Alper |
Pubbl/distr/stampa | New York : , : Academic Press, , 1971 |
Descrizione fisica | 1 online resource (xviii, 254 pages) : illustrations |
Disciplina |
666.72
666/.72 |
Altri autori (Persone) | AlperAllen M. <1932-> |
Collana | Refractory materials : a series of monographs |
Soggetto topico |
Refractory materials
Oxides |
ISBN |
1-299-48122-1
0-323-15834-X |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Copyright Page; High Temperature Oxides: Refractory Glasses, Glass-Ceramics, and Ceramics; Front Cover; Table of Contents; List of Contributors; Foreword; Preface; Contents of Other Volumes; Chapter 1. Refractory Glasses; I. Introduction; II. Vitreous Silica; III. Reconstructed Glasses; IV. High-Silica Glasses; V. Aluminosilicate Glasses; VI. Aluminate Glasses; References; Chapter 2. Refractory Glass-Ceramics; I. Introduction; II. Factors Controlling the Crystallization of Glass; III. Refractory Glass-Ceramic-Forming Systems; IV. Mullite Glass-Ceramics; V. Barium Feldspar Glass-Ceramics
VI. Summary References; Chapter 3. Mullite; I. Introduction; II. The Al2O3-SiO2 System; III. The Structures of Sillimanite and Mullite; IV. The Formation of Mullite; V. Physical Chemistry of Mullite Formation; VI. The Effect of Mineralizers on Mullite Formation; VII. Properties of Mullite; VIII. High-Alumina and Mullite Refractories; Acknowledgment; References; Chapter 4. Oxide Spinels; I. Introduction; II. Structure; III. Preparation of Spinels; IV. Physical Properties; V. Ferrites; VI. Summary; References; Chapter 5. Oxides Containing Tungsten; I. Simple Oxides; II. Complex Oxides References Chapter 6. Zinc Oxide; I. Introduction; II. Physical Properties; III. Applications; References; Chapter 7. Slip-Cast Ceramics; I. Introduction; II. Chemistry of Deflocculation; III. Other Factors in Slip-Casting; References; Chapter 8. Zirconia-Aliimina-Silica Refractories; I. Introduction; II. Manufacture; III. Properties; IV. Use Characteristics for Glass Industry Service; V. Applications; References; Chapter 9. Theory of Glass Networks; I. Introduction; II. Model; III. Vitreous Silica; IV. Soda Silica Glasses; V. Viscous Flow; VI. Thermal Expansion; VII. Internal Friction, Conduction, and DiffusionVIII. Densities and Molar Volumes; References; Author Index; Subject Index |
Record Nr. | UNINA-9910786467103321 |
New York : , : Academic Press, , 1971 | ||
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Lo trovi qui: Univ. Federico II | ||
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High temperature oxides . Part IV Refractory glasses, glass-ceramics, and ceramics / / editor, Allen M. Alper |
Pubbl/distr/stampa | New York : , : Academic Press, , 1971 |
Descrizione fisica | 1 online resource (xviii, 254 pages) : illustrations |
Disciplina |
666.72
666/.72 |
Altri autori (Persone) | AlperAllen M. <1932-> |
Collana | Refractory materials : a series of monographs |
Soggetto topico |
Refractory materials
Oxides |
ISBN |
1-299-48122-1
0-323-15834-X |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Copyright Page; High Temperature Oxides: Refractory Glasses, Glass-Ceramics, and Ceramics; Front Cover; Table of Contents; List of Contributors; Foreword; Preface; Contents of Other Volumes; Chapter 1. Refractory Glasses; I. Introduction; II. Vitreous Silica; III. Reconstructed Glasses; IV. High-Silica Glasses; V. Aluminosilicate Glasses; VI. Aluminate Glasses; References; Chapter 2. Refractory Glass-Ceramics; I. Introduction; II. Factors Controlling the Crystallization of Glass; III. Refractory Glass-Ceramic-Forming Systems; IV. Mullite Glass-Ceramics; V. Barium Feldspar Glass-Ceramics
VI. Summary References; Chapter 3. Mullite; I. Introduction; II. The Al2O3-SiO2 System; III. The Structures of Sillimanite and Mullite; IV. The Formation of Mullite; V. Physical Chemistry of Mullite Formation; VI. The Effect of Mineralizers on Mullite Formation; VII. Properties of Mullite; VIII. High-Alumina and Mullite Refractories; Acknowledgment; References; Chapter 4. Oxide Spinels; I. Introduction; II. Structure; III. Preparation of Spinels; IV. Physical Properties; V. Ferrites; VI. Summary; References; Chapter 5. Oxides Containing Tungsten; I. Simple Oxides; II. Complex Oxides References Chapter 6. Zinc Oxide; I. Introduction; II. Physical Properties; III. Applications; References; Chapter 7. Slip-Cast Ceramics; I. Introduction; II. Chemistry of Deflocculation; III. Other Factors in Slip-Casting; References; Chapter 8. Zirconia-Aliimina-Silica Refractories; I. Introduction; II. Manufacture; III. Properties; IV. Use Characteristics for Glass Industry Service; V. Applications; References; Chapter 9. Theory of Glass Networks; I. Introduction; II. Model; III. Vitreous Silica; IV. Soda Silica Glasses; V. Viscous Flow; VI. Thermal Expansion; VII. Internal Friction, Conduction, and DiffusionVIII. Densities and Molar Volumes; References; Author Index; Subject Index |
Record Nr. | UNINA-9910809216603321 |
New York : , : Academic Press, , 1971 | ||
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Lo trovi qui: Univ. Federico II | ||
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High-pressure silicates and oxides : phase transition and thermodynamics / / Masaki Akaogi |
Autore | Akaogi Masaki |
Pubbl/distr/stampa | Singapore : , : Springer, , [2022] |
Descrizione fisica | 1 online resource (215 pages) |
Disciplina | 546.7212 |
Collana | Advances in geological science |
Soggetto topico | Oxides |
ISBN |
9789811963636
9789811963629 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910631094903321 |
Akaogi Masaki
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Singapore : , : Springer, , [2022] | ||
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Lo trovi qui: Univ. Federico II | ||
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Inhaled nitric oxide in preterm infants |
Pubbl/distr/stampa | [Place of publication not identified], : Agency for Healthcare Research and Quality, 2010 |
Descrizione fisica | 1 online resource (ix, 92 p.) |
Disciplina | 618.92/2004636 |
Collana | AHRQ publication Inhaled nitric oxide in preterm infants |
Soggetto topico |
Bronchopulmonary dysplasia
Nitric oxide Premature infants - Diseases Nitrogen Oxides Free Radicals Reactive Nitrogen Species Infant, Newborn Infant, Premature, Diseases Ventilator-Induced Lung Injury Oxides Lung Injury Nitrogen Compounds Infant, Newborn, Diseases Infant Inorganic Chemicals Age Groups Lung Diseases Congenital, Hereditary, and Neonatal Diseases and Abnormalities Oxygen Compounds Persons Diseases Respiratory Tract Diseases Bronchopulmonary Dysplasia Infant, Premature Nitric Oxide Medicine Health & Biological Sciences Pediatrics |
Soggetto genere / forma | Study Characteristics |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910703239003321 |
[Place of publication not identified], : Agency for Healthcare Research and Quality, 2010 | ||
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Lo trovi qui: Univ. Federico II | ||
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Interactions of organic surfactants with oxide nanoparticles grown in aqueous environments [[electronic resource] /] / Jennifer Synowczynski |
Autore | Synowczynski Jennifer |
Pubbl/distr/stampa | Aberdeen Proving Ground, MD : , : Army Research Laboratory, , [2007] |
Descrizione fisica | 1 online resource (vi, 20 pages) : illustrations |
Collana | ARL-TR |
Soggetto topico |
Surface active agents
Nanochemistry Oxides |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910699009203321 |
Synowczynski Jennifer
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Aberdeen Proving Ground, MD : , : Army Research Laboratory, , [2007] | ||
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Lo trovi qui: Univ. Federico II | ||
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New materials III : transparent conducting and semiconducting oxides, solid state lighting, novel superconductors and electromagnetic metamaterials : proceedings of the 5th Forum on New Materials, part of CIMTEC 2010--12th International Ceramics Congress and 5th Forum on New Materials, Montecatini Terme, Italy, June 13-18, 2010 / / edited by Pietro Vincenzini ; co-edited by David S. Ginley [and three others] |
Pubbl/distr/stampa | Stafa-Zuerich ; ; Enfield, NH : , : Trans Tech Pubs. ltd. on behalf of Techna Group, , [2010] |
Descrizione fisica | 1 online resource (282 p.) |
Disciplina | 621.3815 |
Altri autori (Persone) |
VincenziniP. <1939->
GinleyD. S (David S.) |
Collana | Advances in science and technology |
Soggetto topico |
Electronics - Materials
Superconductors Metamaterials Oxides Light emitting diodes |
Soggetto genere / forma | Electronic books. |
ISBN | 3-03813-432-5 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | section I. Transparent conducting and semiconducting oxides -- section II. Materials for solid state lighting -- section III. Science and engineering of novel superconductors -- section IV. Electromagnetic metamaterials. |
Record Nr. | UNINA-9910462504103321 |
Stafa-Zuerich ; ; Enfield, NH : , : Trans Tech Pubs. ltd. on behalf of Techna Group, , [2010] | ||
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Lo trovi qui: Univ. Federico II | ||
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