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Biblioteca

MARC Lista (tabellare)
Charge dynamics in organic semiconductors : from chemical structures to devices / / Pascal Kordt
Charge dynamics in organic semiconductors : from chemical structures to devices / / Pascal Kordt
Autore Kordt Pascal
Pubbl/distr/stampa Berlin, [Germany] ; ; Boston, [Massachusetts] : , : De Gruyter, , 2016
Descrizione fisica 1 online resource (202 p.)
Disciplina 621.38152
Soggetto topico Organic semiconductors
Soggetto genere / forma Electronic books.
ISBN 3-11-047387-9
3-11-047363-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Frontmatter -- Acknowledgements -- Abstract -- Contents -- Introduction -- 1. Organic Semiconductor Devices -- 2. Experimental Techniques -- 3. Charge Dynamics at Different Scales -- 4. Computational Methods -- 5. Energetics and Dispersive Transport -- 6. Correlated Energetic Landscapes -- 7. Microscopic, Stochastic and Device Simulations -- 8. Parametrization of Lattice Models -- 9. Drift-Diffusion with Microscopic Link -- Conclusions and Outlook -- A. Molecule Abbreviations -- Bibliography -- Index
Record Nr. UNINA-9910467857103321
Kordt Pascal  
Berlin, [Germany] ; ; Boston, [Massachusetts] : , : De Gruyter, , 2016
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Charge dynamics in organic semiconductors : from chemical structures to devices / / Pascal Kordt
Charge dynamics in organic semiconductors : from chemical structures to devices / / Pascal Kordt
Autore Kordt Pascal
Pubbl/distr/stampa Berlin, [Germany] ; ; Boston, [Massachusetts] : , : De Gruyter, , 2016
Descrizione fisica 1 online resource (202 p.)
Disciplina 621.38152
Soggetto topico Organic semiconductors
ISBN 3-11-047387-9
3-11-047363-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Frontmatter -- Acknowledgements -- Abstract -- Contents -- Introduction -- 1. Organic Semiconductor Devices -- 2. Experimental Techniques -- 3. Charge Dynamics at Different Scales -- 4. Computational Methods -- 5. Energetics and Dispersive Transport -- 6. Correlated Energetic Landscapes -- 7. Microscopic, Stochastic and Device Simulations -- 8. Parametrization of Lattice Models -- 9. Drift-Diffusion with Microscopic Link -- Conclusions and Outlook -- A. Molecule Abbreviations -- Bibliography -- Index
Record Nr. UNINA-9910796553203321
Kordt Pascal  
Berlin, [Germany] ; ; Boston, [Massachusetts] : , : De Gruyter, , 2016
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Charge dynamics in organic semiconductors : from chemical structures to devices / / Pascal Kordt
Charge dynamics in organic semiconductors : from chemical structures to devices / / Pascal Kordt
Autore Kordt Pascal
Pubbl/distr/stampa Berlin, [Germany] ; ; Boston, [Massachusetts] : , : De Gruyter, , 2016
Descrizione fisica 1 online resource (202 p.)
Disciplina 621.38152
Soggetto topico Organic semiconductors
ISBN 3-11-047387-9
3-11-047363-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Frontmatter -- Acknowledgements -- Abstract -- Contents -- Introduction -- 1. Organic Semiconductor Devices -- 2. Experimental Techniques -- 3. Charge Dynamics at Different Scales -- 4. Computational Methods -- 5. Energetics and Dispersive Transport -- 6. Correlated Energetic Landscapes -- 7. Microscopic, Stochastic and Device Simulations -- 8. Parametrization of Lattice Models -- 9. Drift-Diffusion with Microscopic Link -- Conclusions and Outlook -- A. Molecule Abbreviations -- Bibliography -- Index
Record Nr. UNINA-9910806874903321
Kordt Pascal  
Berlin, [Germany] ; ; Boston, [Massachusetts] : , : De Gruyter, , 2016
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Defects in Organic Semiconductors and Devices
Defects in Organic Semiconductors and Devices
Autore Nguyen Thien-Phap
Pubbl/distr/stampa Newark : , : John Wiley & Sons, Incorporated, , 2023
Descrizione fisica 1 online resource (279 pages)
Soggetto topico Organic semiconductors
Semiconductor doping
ISBN 9781394229451
1394229453
9781394229437
1394229437
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover -- Title Page -- Copyright Page -- Contents -- Abbreviations -- Introduction -- Chapter 1. Overview of Organic Semiconductors -- 1.1. Organic semiconductors -- 1.2. Doping of organic semiconductors -- 1.3. Organic electronic devices -- 1.3.1. Architectures of organic devices -- 1.3.2. Organic light-emitting diodes (OLEDs) -- 1.3.3. Organic solar cells (OSCs or OPVs) -- 1.3.4. Organic field-effect transistors (OFETs) -- Chapter 2. Defects in Materials -- 2.1. Order and disorder -- 2.2. Crystalline semiconductors -- 2.2.1. Localized states -- 2.2.2. Density of states (DOS) -- 2.3. Amorphous semiconductors -- 2.3.1. Localized states -- 2.3.2. Density of states (DOS) -- 2.4. Organic semiconductors -- 2.4.1. Polymer structure -- 2.4.2. Polymer crystallinity -- 2.4.3. Defects in conjugated polymers -- 2.4.4. Defects in small-molecule crystals -- 2.4.5. Localized states -- 2.4.6. Density of states -- 2.5. Distribution of the energetic states -- Chapter 3. Defects and Physical Properties of Semiconductors -- 3.1. Carrier transport in organic semiconductors -- 3.1.1. Hopping conduction -- 3.1.2. Uniform density of states model -- 3.1.3. Non-uniform density of states models -- 3.2. Effects of defects on the carrier transport -- 3.2.1. Traps and recombination centers -- 3.2.2. Trapping mechanisms and trap parameters -- 3.3. Optical properties of semiconductors and defects -- 3.3.1. Defects and absorption -- 3.3.2. Defects and luminescence -- Chapter 4. Techniques for Studying Defects in Semiconductors -- 4.1. Electron spin resonance (ESR) -- 4.1.1. Basic concepts of ESR -- 4.1.2. Interpretation of ESR line -- 4.1.3. Electron nuclear double resonance (ENDOR) -- 4.1.4. Investigation of defects using the ESR technique -- 4.2. Optical techniques -- 4.2.1. Fluorescence spectroscopy (FL) -- 4.2.2. Thermally stimulated luminescence (TSL) spectroscopy.
4.3. Electrical techniques -- 4.3.1. Thermally stimulated current (TSC) technique -- 4.3.2. Current-voltage measurements: space charge-limited current (SCLC) -- 4.3.3. Impedance spectroscopy (IS) -- 4.3.4. Deep-level transient spectroscopy (DLTS) -- 4.3.5. Time of flight (TOF) and charge carrier extraction by linearly increasing voltage (CELIV) techniques -- Chapter 5. Defect Origins -- 5.1. Defects in organic semiconductors -- 5.1.1. Structural defects -- 5.1.2. Impurity defects -- 5.2. Defects in organic devices -- 5.2.1. Defects from the semiconductor -- 5.2.2. Defects from the surface and the interface -- 5.2.3. Defects from diffused impurities -- Chapter 6. Defects, Performance and Reliability of Organic Devices -- 6.1. Impact of defects on the performance of organic devices -- 6.1.1. Defects and efficiency of OLEDs -- 6.1.2. Defects and efficiency of OPVs -- 6.1.3. Defects and performance of OFETs -- 6.2. Impact of defects on the stability of organic devices -- 6.2.1. Overview of degradation mechanisms in organic semiconductors and devices -- 6.2.2. Defects and degradation of organic semiconductor and devices -- Future Prospects -- References -- Index -- EULA.
Record Nr. UNINA-9911019272603321
Nguyen Thien-Phap  
Newark : , : John Wiley & Sons, Incorporated, , 2023
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Economic on-grid solar energy via organic thin film technology [[electronic resource] ] : 28 September 2007 - 27 October 2008 / / D. Laird ... [and others]
Economic on-grid solar energy via organic thin film technology [[electronic resource] ] : 28 September 2007 - 27 October 2008 / / D. Laird ... [and others]
Pubbl/distr/stampa Golden, CO : , : National Renewable Energy Laboratory, , [2009]
Descrizione fisica 1 online resource (iv, 40 pages) : illustrations (some color)
Altri autori (Persone) LairdD
Von RoedernBolko G
Soggetto topico Photovoltaic power systems - Design and construction
Solar cells
Organic semiconductors
Thin films
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Economic On-Grid Solar Energy via Organic Thin Film Technology
Record Nr. UNINA-9910698442103321
Golden, CO : , : National Renewable Energy Laboratory, , [2009]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Electrical characterization of organic electronic materials and devices [[electronic resource] /] / Peter Stallinga
Electrical characterization of organic electronic materials and devices [[electronic resource] /] / Peter Stallinga
Autore Stallinga Peter <1966->
Pubbl/distr/stampa Hoboken, NJ, : John Wiley & Sons, 2009
Descrizione fisica 1 online resource (317 p.)
Disciplina 621.381
Soggetto topico Electronics - Materials
Organic electronics
Organic semiconductors
Electronic apparatus and appliances - Materials
ISBN 1-282-31679-6
9786612316791
0-470-75016-2
0-470-75017-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Electrical Characterization of Organic Electronic Materials and Devices; Contents; Preface; 1 General concepts; 1.1 Introduction; 1.2 Conduction mechanism; 1.3 Chemistry and the energy diagram; 1.3.1 Energy diagram of crystalline materials; 1.3.2 Energy diagram of amorphous materials; 1.4 Disordered materials and the Meyer-Neldel Rule; 1.5 Devices; 1.5.1 Resistor; 1.5.2 Schottky diode; 1.5.3 MIS diode and MIS tunnel diode; 1.5.4 Thin-film transistor; 1.6 Optoelectronics/photovoltaics; 2 Two-terminal devices: DC current; 2.1 Conductance; 2.1.1 Ohmic conduction; 2.1.2 Poole-Frenkel
2.1.3 Tunneling2.1.4 Space-charge-limited current; 2.1.5 Granular materials; grain boundaries; 2.2 DC current of a Schottky barrier; 2.2.1 High-current regime; 2.2.2 Displacement current; 2.3 DC measurements; 2.3.1 van der Pauw; 2.3.2 Hall effect; 3 Two-terminal devices: Admittance spectroscopy; 3.1 Admittance spectroscopy; 3.1.1 Low-frequency RCL bridge; 3.1.2 DC admittance; 3.2 Geometrical capacitance; 3.3 Equivalent circuits; 3.4 Resistor; SCLC; 3.5 Schottky diodes; 3.5.1 Schottky diode; nonuniform doping; 3.5.2 Schottky diode; adding an abundant deep acceptor level
3.5.3 Schottky diode minority levels; 3.5.4 Schottky barrier; temperature dependence; 3.6 MIS diodes; 3.6.1 MIS of doped semiconductors; 3.6.2 MIS with interface states; 3.6.3 MIS of low-mobility semiconductors; 3.7 MIS tunnel diode; 3.8 Noise measurements; 4 Two-terminal devices: Transient techniques; 4.1 Kinetics: Emission and capture of carriers; 4.1.1 Emission and capture in organic materials; 4.2 Current transient spectroscopy; 4.2.1 Example of an emission experiment; 4.2.2 Example of a capture experiment; 4.3 Thermally stimulated current; 4.4 Capacitance transient spectroscopy
4.4.1 Case study: Example of a capacitance transient measurement4.5 Deep-level transient spectroscopy; 4.6 Q-DLTS; 5 Time-of-flight; 5.1 Introduction; 5.2 Drift transient; 5.3 Diffusive transient; 5.4 Violating Einstein's Relation; 5.5 Multi-trap-and-release; 5.6 Anomalous transients; 5.7 High current (space charge) transients; 5.8 Summary of the ToF technique; 6 Thin-film transistors; 6.1 Field-effect transistors; 6.2 MOS-FET; 6.2.1 MOS-FET threshold voltage; 6.2.2 MOS-FET current; 6.2.3 Exact solution; 6.2.4 MOS-FET subthreshold current and subthreshold swing; 6.3 Introducing TFTs
6.4 Basic model6.4.1 Threshold voltage and subthreshold current; 6.5 Justification for the two-dimensional approach; 6.6 Ambipolar materials and devices; 6.7 Contact effects and other simple nonidealities; 6.7.1 Insulator leakage; 6.7.2 Contact resistance; 6.7.3 Contact barriers; 6.7.4 Grain boundaries; 6.7.5 Parallel conductance; 6.8 Metallic contacts in TFTs; 6.9 Normally-on TFTs; 6.9.1 Narrow gap semiconductors; 6.9.2 Thick TFTs; 6.9.3 Doped semiconductors and inversion-channel TFT; 6.9.4 Metal-insulator-metal TFT; 6.10 Effects of traps; 6.10.1 Traps and threshold voltage
6.10.2 Traps and output curves
Record Nr. UNINA-9910139545903321
Stallinga Peter <1966->  
Hoboken, NJ, : John Wiley & Sons, 2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Electrical characterization of organic electronic materials and devices / / Peter Stallinga
Electrical characterization of organic electronic materials and devices / / Peter Stallinga
Autore Stallinga Peter <1966->
Edizione [1st ed.]
Pubbl/distr/stampa Hoboken, NJ, : John Wiley & Sons, 2009
Descrizione fisica 1 online resource (317 p.)
Disciplina 621.381
Soggetto topico Electronics - Materials
Organic electronics
Organic semiconductors
Electronic apparatus and appliances - Materials
ISBN 9786612316791
9781282316799
1282316796
9780470750162
0470750162
9780470750179
0470750170
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Electrical Characterization of Organic Electronic Materials and Devices; Contents; Preface; 1 General concepts; 1.1 Introduction; 1.2 Conduction mechanism; 1.3 Chemistry and the energy diagram; 1.3.1 Energy diagram of crystalline materials; 1.3.2 Energy diagram of amorphous materials; 1.4 Disordered materials and the Meyer-Neldel Rule; 1.5 Devices; 1.5.1 Resistor; 1.5.2 Schottky diode; 1.5.3 MIS diode and MIS tunnel diode; 1.5.4 Thin-film transistor; 1.6 Optoelectronics/photovoltaics; 2 Two-terminal devices: DC current; 2.1 Conductance; 2.1.1 Ohmic conduction; 2.1.2 Poole-Frenkel
2.1.3 Tunneling2.1.4 Space-charge-limited current; 2.1.5 Granular materials; grain boundaries; 2.2 DC current of a Schottky barrier; 2.2.1 High-current regime; 2.2.2 Displacement current; 2.3 DC measurements; 2.3.1 van der Pauw; 2.3.2 Hall effect; 3 Two-terminal devices: Admittance spectroscopy; 3.1 Admittance spectroscopy; 3.1.1 Low-frequency RCL bridge; 3.1.2 DC admittance; 3.2 Geometrical capacitance; 3.3 Equivalent circuits; 3.4 Resistor; SCLC; 3.5 Schottky diodes; 3.5.1 Schottky diode; nonuniform doping; 3.5.2 Schottky diode; adding an abundant deep acceptor level
3.5.3 Schottky diode minority levels; 3.5.4 Schottky barrier; temperature dependence; 3.6 MIS diodes; 3.6.1 MIS of doped semiconductors; 3.6.2 MIS with interface states; 3.6.3 MIS of low-mobility semiconductors; 3.7 MIS tunnel diode; 3.8 Noise measurements; 4 Two-terminal devices: Transient techniques; 4.1 Kinetics: Emission and capture of carriers; 4.1.1 Emission and capture in organic materials; 4.2 Current transient spectroscopy; 4.2.1 Example of an emission experiment; 4.2.2 Example of a capture experiment; 4.3 Thermally stimulated current; 4.4 Capacitance transient spectroscopy
4.4.1 Case study: Example of a capacitance transient measurement4.5 Deep-level transient spectroscopy; 4.6 Q-DLTS; 5 Time-of-flight; 5.1 Introduction; 5.2 Drift transient; 5.3 Diffusive transient; 5.4 Violating Einstein's Relation; 5.5 Multi-trap-and-release; 5.6 Anomalous transients; 5.7 High current (space charge) transients; 5.8 Summary of the ToF technique; 6 Thin-film transistors; 6.1 Field-effect transistors; 6.2 MOS-FET; 6.2.1 MOS-FET threshold voltage; 6.2.2 MOS-FET current; 6.2.3 Exact solution; 6.2.4 MOS-FET subthreshold current and subthreshold swing; 6.3 Introducing TFTs
6.4 Basic model6.4.1 Threshold voltage and subthreshold current; 6.5 Justification for the two-dimensional approach; 6.6 Ambipolar materials and devices; 6.7 Contact effects and other simple nonidealities; 6.7.1 Insulator leakage; 6.7.2 Contact resistance; 6.7.3 Contact barriers; 6.7.4 Grain boundaries; 6.7.5 Parallel conductance; 6.8 Metallic contacts in TFTs; 6.9 Normally-on TFTs; 6.9.1 Narrow gap semiconductors; 6.9.2 Thick TFTs; 6.9.3 Doped semiconductors and inversion-channel TFT; 6.9.4 Metal-insulator-metal TFT; 6.10 Effects of traps; 6.10.1 Traps and threshold voltage
6.10.2 Traps and output curves
Record Nr. UNINA-9910816874403321
Stallinga Peter <1966->  
Hoboken, NJ, : John Wiley & Sons, 2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
IEEE standard for test methods for the characterization of organic transistors and materials / / Institute of Electrical and Electronics Engineers
IEEE standard for test methods for the characterization of organic transistors and materials / / Institute of Electrical and Electronics Engineers
Pubbl/distr/stampa New York, NY : , : IEEE, , 2004
Descrizione fisica 1 online resource (vi, 13 pages)
Disciplina 621.3815284
Soggetto topico Field-effect transistors
Organic semiconductors
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti IEEE Std 1620-2004
Record Nr. UNINA-9910147230703321
New York, NY : , : IEEE, , 2004
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
IEEE standard for test methods for the characterization of organic transistors and materials / / Institute of Electrical and Electronics Engineers
IEEE standard for test methods for the characterization of organic transistors and materials / / Institute of Electrical and Electronics Engineers
Pubbl/distr/stampa New York, NY : , : IEEE, , 2004
Descrizione fisica 1 online resource (vi, 13 pages)
Disciplina 621.3815284
Soggetto topico Field-effect transistors
Organic semiconductors
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti IEEE Std 1620-2004
Record Nr. UNISA-996278279303316
New York, NY : , : IEEE, , 2004
Materiale a stampa
Lo trovi qui: Univ. di Salerno
Opac: Controlla la disponibilità qui
Introduction to organic electronic and optoelectronic materials and devices / edited by Sam-Shajing Sun, Larry R. Dalton
Introduction to organic electronic and optoelectronic materials and devices / edited by Sam-Shajing Sun, Larry R. Dalton
Pubbl/distr/stampa Boca Raton : CRC Press, c2008
Descrizione fisica xxiv, 910 p. : ill. ; 26 cm
Disciplina 621.36
Altri autori (Persone) Sun, Sam-Shajing
Dalton, Larry R.
Collana Optical science and engineering ; 133
Soggetto topico Semiconductors - Materials
Optoelectronics - Materials
Organic semiconductors
Organic compounds - Electric properties
ISBN 9780849392849
Classificazione LC TK7871
621.3.2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISALENTO-991002784299707536
Boca Raton : CRC Press, c2008
Materiale a stampa
Lo trovi qui: Univ. del Salento
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