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Charge dynamics in organic semiconductors : from chemical structures to devices / / Pascal Kordt
| Charge dynamics in organic semiconductors : from chemical structures to devices / / Pascal Kordt |
| Autore | Kordt Pascal |
| Pubbl/distr/stampa | Berlin, [Germany] ; ; Boston, [Massachusetts] : , : De Gruyter, , 2016 |
| Descrizione fisica | 1 online resource (202 p.) |
| Disciplina | 621.38152 |
| Soggetto topico | Organic semiconductors |
| Soggetto genere / forma | Electronic books. |
| ISBN |
3-11-047387-9
3-11-047363-1 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Frontmatter -- Acknowledgements -- Abstract -- Contents -- Introduction -- 1. Organic Semiconductor Devices -- 2. Experimental Techniques -- 3. Charge Dynamics at Different Scales -- 4. Computational Methods -- 5. Energetics and Dispersive Transport -- 6. Correlated Energetic Landscapes -- 7. Microscopic, Stochastic and Device Simulations -- 8. Parametrization of Lattice Models -- 9. Drift-Diffusion with Microscopic Link -- Conclusions and Outlook -- A. Molecule Abbreviations -- Bibliography -- Index |
| Record Nr. | UNINA-9910467857103321 |
Kordt Pascal
|
||
| Berlin, [Germany] ; ; Boston, [Massachusetts] : , : De Gruyter, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Charge dynamics in organic semiconductors : from chemical structures to devices / / Pascal Kordt
| Charge dynamics in organic semiconductors : from chemical structures to devices / / Pascal Kordt |
| Autore | Kordt Pascal |
| Pubbl/distr/stampa | Berlin, [Germany] ; ; Boston, [Massachusetts] : , : De Gruyter, , 2016 |
| Descrizione fisica | 1 online resource (202 p.) |
| Disciplina | 621.38152 |
| Soggetto topico | Organic semiconductors |
| ISBN |
3-11-047387-9
3-11-047363-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Frontmatter -- Acknowledgements -- Abstract -- Contents -- Introduction -- 1. Organic Semiconductor Devices -- 2. Experimental Techniques -- 3. Charge Dynamics at Different Scales -- 4. Computational Methods -- 5. Energetics and Dispersive Transport -- 6. Correlated Energetic Landscapes -- 7. Microscopic, Stochastic and Device Simulations -- 8. Parametrization of Lattice Models -- 9. Drift-Diffusion with Microscopic Link -- Conclusions and Outlook -- A. Molecule Abbreviations -- Bibliography -- Index |
| Record Nr. | UNINA-9910796553203321 |
|
Kordt Pascal
|
||
| Berlin, [Germany] ; ; Boston, [Massachusetts] : , : De Gruyter, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Charge dynamics in organic semiconductors : from chemical structures to devices / / Pascal Kordt
| Charge dynamics in organic semiconductors : from chemical structures to devices / / Pascal Kordt |
| Autore | Kordt Pascal |
| Pubbl/distr/stampa | Berlin, [Germany] ; ; Boston, [Massachusetts] : , : De Gruyter, , 2016 |
| Descrizione fisica | 1 online resource (202 p.) |
| Disciplina | 621.38152 |
| Soggetto topico | Organic semiconductors |
| ISBN |
3-11-047387-9
3-11-047363-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Frontmatter -- Acknowledgements -- Abstract -- Contents -- Introduction -- 1. Organic Semiconductor Devices -- 2. Experimental Techniques -- 3. Charge Dynamics at Different Scales -- 4. Computational Methods -- 5. Energetics and Dispersive Transport -- 6. Correlated Energetic Landscapes -- 7. Microscopic, Stochastic and Device Simulations -- 8. Parametrization of Lattice Models -- 9. Drift-Diffusion with Microscopic Link -- Conclusions and Outlook -- A. Molecule Abbreviations -- Bibliography -- Index |
| Record Nr. | UNINA-9910806874903321 |
|
Kordt Pascal
|
||
| Berlin, [Germany] ; ; Boston, [Massachusetts] : , : De Gruyter, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Economic on-grid solar energy via organic thin film technology [[electronic resource] ] : 28 September 2007 - 27 October 2008 / / D. Laird ... [and others]
| Economic on-grid solar energy via organic thin film technology [[electronic resource] ] : 28 September 2007 - 27 October 2008 / / D. Laird ... [and others] |
| Pubbl/distr/stampa | Golden, CO : , : National Renewable Energy Laboratory, , [2009] |
| Descrizione fisica | 1 online resource (iv, 40 pages) : illustrations (some color) |
| Altri autori (Persone) |
LairdD
Von RoedernBolko G |
| Soggetto topico |
Photovoltaic power systems - Design and construction
Solar cells Organic semiconductors Thin films |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Economic On-Grid Solar Energy via Organic Thin Film Technology |
| Record Nr. | UNINA-9910698442103321 |
| Golden, CO : , : National Renewable Energy Laboratory, , [2009] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Electrical characterization of organic electronic materials and devices [[electronic resource] /] / Peter Stallinga
| Electrical characterization of organic electronic materials and devices [[electronic resource] /] / Peter Stallinga |
| Autore | Stallinga Peter <1966-> |
| Pubbl/distr/stampa | Hoboken, NJ, : John Wiley & Sons, 2009 |
| Descrizione fisica | 1 online resource (317 p.) |
| Disciplina | 621.381 |
| Soggetto topico |
Electronics - Materials
Organic electronics Organic semiconductors Electronic apparatus and appliances - Materials |
| ISBN |
1-282-31679-6
9786612316791 0-470-75016-2 0-470-75017-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Electrical Characterization of Organic Electronic Materials and Devices; Contents; Preface; 1 General concepts; 1.1 Introduction; 1.2 Conduction mechanism; 1.3 Chemistry and the energy diagram; 1.3.1 Energy diagram of crystalline materials; 1.3.2 Energy diagram of amorphous materials; 1.4 Disordered materials and the Meyer-Neldel Rule; 1.5 Devices; 1.5.1 Resistor; 1.5.2 Schottky diode; 1.5.3 MIS diode and MIS tunnel diode; 1.5.4 Thin-film transistor; 1.6 Optoelectronics/photovoltaics; 2 Two-terminal devices: DC current; 2.1 Conductance; 2.1.1 Ohmic conduction; 2.1.2 Poole-Frenkel
2.1.3 Tunneling2.1.4 Space-charge-limited current; 2.1.5 Granular materials; grain boundaries; 2.2 DC current of a Schottky barrier; 2.2.1 High-current regime; 2.2.2 Displacement current; 2.3 DC measurements; 2.3.1 van der Pauw; 2.3.2 Hall effect; 3 Two-terminal devices: Admittance spectroscopy; 3.1 Admittance spectroscopy; 3.1.1 Low-frequency RCL bridge; 3.1.2 DC admittance; 3.2 Geometrical capacitance; 3.3 Equivalent circuits; 3.4 Resistor; SCLC; 3.5 Schottky diodes; 3.5.1 Schottky diode; nonuniform doping; 3.5.2 Schottky diode; adding an abundant deep acceptor level 3.5.3 Schottky diode minority levels; 3.5.4 Schottky barrier; temperature dependence; 3.6 MIS diodes; 3.6.1 MIS of doped semiconductors; 3.6.2 MIS with interface states; 3.6.3 MIS of low-mobility semiconductors; 3.7 MIS tunnel diode; 3.8 Noise measurements; 4 Two-terminal devices: Transient techniques; 4.1 Kinetics: Emission and capture of carriers; 4.1.1 Emission and capture in organic materials; 4.2 Current transient spectroscopy; 4.2.1 Example of an emission experiment; 4.2.2 Example of a capture experiment; 4.3 Thermally stimulated current; 4.4 Capacitance transient spectroscopy 4.4.1 Case study: Example of a capacitance transient measurement4.5 Deep-level transient spectroscopy; 4.6 Q-DLTS; 5 Time-of-flight; 5.1 Introduction; 5.2 Drift transient; 5.3 Diffusive transient; 5.4 Violating Einstein's Relation; 5.5 Multi-trap-and-release; 5.6 Anomalous transients; 5.7 High current (space charge) transients; 5.8 Summary of the ToF technique; 6 Thin-film transistors; 6.1 Field-effect transistors; 6.2 MOS-FET; 6.2.1 MOS-FET threshold voltage; 6.2.2 MOS-FET current; 6.2.3 Exact solution; 6.2.4 MOS-FET subthreshold current and subthreshold swing; 6.3 Introducing TFTs 6.4 Basic model6.4.1 Threshold voltage and subthreshold current; 6.5 Justification for the two-dimensional approach; 6.6 Ambipolar materials and devices; 6.7 Contact effects and other simple nonidealities; 6.7.1 Insulator leakage; 6.7.2 Contact resistance; 6.7.3 Contact barriers; 6.7.4 Grain boundaries; 6.7.5 Parallel conductance; 6.8 Metallic contacts in TFTs; 6.9 Normally-on TFTs; 6.9.1 Narrow gap semiconductors; 6.9.2 Thick TFTs; 6.9.3 Doped semiconductors and inversion-channel TFT; 6.9.4 Metal-insulator-metal TFT; 6.10 Effects of traps; 6.10.1 Traps and threshold voltage 6.10.2 Traps and output curves |
| Record Nr. | UNINA-9910139545903321 |
|
Stallinga Peter <1966->
|
||
| Hoboken, NJ, : John Wiley & Sons, 2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Electrical characterization of organic electronic materials and devices [[electronic resource] /] / Peter Stallinga
| Electrical characterization of organic electronic materials and devices [[electronic resource] /] / Peter Stallinga |
| Autore | Stallinga Peter <1966-> |
| Pubbl/distr/stampa | Hoboken, NJ, : John Wiley & Sons, 2009 |
| Descrizione fisica | 1 online resource (317 p.) |
| Disciplina | 621.381 |
| Soggetto topico |
Electronics - Materials
Organic electronics Organic semiconductors Electronic apparatus and appliances - Materials |
| ISBN |
1-282-31679-6
9786612316791 0-470-75016-2 0-470-75017-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Electrical Characterization of Organic Electronic Materials and Devices; Contents; Preface; 1 General concepts; 1.1 Introduction; 1.2 Conduction mechanism; 1.3 Chemistry and the energy diagram; 1.3.1 Energy diagram of crystalline materials; 1.3.2 Energy diagram of amorphous materials; 1.4 Disordered materials and the Meyer-Neldel Rule; 1.5 Devices; 1.5.1 Resistor; 1.5.2 Schottky diode; 1.5.3 MIS diode and MIS tunnel diode; 1.5.4 Thin-film transistor; 1.6 Optoelectronics/photovoltaics; 2 Two-terminal devices: DC current; 2.1 Conductance; 2.1.1 Ohmic conduction; 2.1.2 Poole-Frenkel
2.1.3 Tunneling2.1.4 Space-charge-limited current; 2.1.5 Granular materials; grain boundaries; 2.2 DC current of a Schottky barrier; 2.2.1 High-current regime; 2.2.2 Displacement current; 2.3 DC measurements; 2.3.1 van der Pauw; 2.3.2 Hall effect; 3 Two-terminal devices: Admittance spectroscopy; 3.1 Admittance spectroscopy; 3.1.1 Low-frequency RCL bridge; 3.1.2 DC admittance; 3.2 Geometrical capacitance; 3.3 Equivalent circuits; 3.4 Resistor; SCLC; 3.5 Schottky diodes; 3.5.1 Schottky diode; nonuniform doping; 3.5.2 Schottky diode; adding an abundant deep acceptor level 3.5.3 Schottky diode minority levels; 3.5.4 Schottky barrier; temperature dependence; 3.6 MIS diodes; 3.6.1 MIS of doped semiconductors; 3.6.2 MIS with interface states; 3.6.3 MIS of low-mobility semiconductors; 3.7 MIS tunnel diode; 3.8 Noise measurements; 4 Two-terminal devices: Transient techniques; 4.1 Kinetics: Emission and capture of carriers; 4.1.1 Emission and capture in organic materials; 4.2 Current transient spectroscopy; 4.2.1 Example of an emission experiment; 4.2.2 Example of a capture experiment; 4.3 Thermally stimulated current; 4.4 Capacitance transient spectroscopy 4.4.1 Case study: Example of a capacitance transient measurement4.5 Deep-level transient spectroscopy; 4.6 Q-DLTS; 5 Time-of-flight; 5.1 Introduction; 5.2 Drift transient; 5.3 Diffusive transient; 5.4 Violating Einstein's Relation; 5.5 Multi-trap-and-release; 5.6 Anomalous transients; 5.7 High current (space charge) transients; 5.8 Summary of the ToF technique; 6 Thin-film transistors; 6.1 Field-effect transistors; 6.2 MOS-FET; 6.2.1 MOS-FET threshold voltage; 6.2.2 MOS-FET current; 6.2.3 Exact solution; 6.2.4 MOS-FET subthreshold current and subthreshold swing; 6.3 Introducing TFTs 6.4 Basic model6.4.1 Threshold voltage and subthreshold current; 6.5 Justification for the two-dimensional approach; 6.6 Ambipolar materials and devices; 6.7 Contact effects and other simple nonidealities; 6.7.1 Insulator leakage; 6.7.2 Contact resistance; 6.7.3 Contact barriers; 6.7.4 Grain boundaries; 6.7.5 Parallel conductance; 6.8 Metallic contacts in TFTs; 6.9 Normally-on TFTs; 6.9.1 Narrow gap semiconductors; 6.9.2 Thick TFTs; 6.9.3 Doped semiconductors and inversion-channel TFT; 6.9.4 Metal-insulator-metal TFT; 6.10 Effects of traps; 6.10.1 Traps and threshold voltage 6.10.2 Traps and output curves |
| Record Nr. | UNINA-9910816874403321 |
|
Stallinga Peter <1966->
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| Hoboken, NJ, : John Wiley & Sons, 2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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IEEE standard for test methods for the characterization of organic transistors and materials / / Institute of Electrical and Electronics Engineers
| IEEE standard for test methods for the characterization of organic transistors and materials / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | New York, NY : , : IEEE, , 2004 |
| Descrizione fisica | 1 online resource (vi, 13 pages) |
| Disciplina | 621.3815284 |
| Soggetto topico |
Field-effect transistors
Organic semiconductors |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | IEEE Std 1620-2004 |
| Record Nr. | UNINA-9910147230703321 |
| New York, NY : , : IEEE, , 2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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IEEE standard for test methods for the characterization of organic transistors and materials / / Institute of Electrical and Electronics Engineers
| IEEE standard for test methods for the characterization of organic transistors and materials / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | New York, NY : , : IEEE, , 2004 |
| Descrizione fisica | 1 online resource (vi, 13 pages) |
| Disciplina | 621.3815284 |
| Soggetto topico |
Field-effect transistors
Organic semiconductors |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | IEEE Std 1620-2004 |
| Record Nr. | UNISA-996278279303316 |
| New York, NY : , : IEEE, , 2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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Introduction to organic electronic and optoelectronic materials and devices / edited by Sam-Shajing Sun, Larry R. Dalton
| Introduction to organic electronic and optoelectronic materials and devices / edited by Sam-Shajing Sun, Larry R. Dalton |
| Pubbl/distr/stampa | Boca Raton : CRC Press, c2008 |
| Descrizione fisica | xxiv, 910 p. : ill. ; 26 cm |
| Disciplina | 621.36 |
| Altri autori (Persone) |
Sun, Sam-Shajing
Dalton, Larry R. |
| Collana | Optical science and engineering ; 133 |
| Soggetto topico |
Semiconductors - Materials
Optoelectronics - Materials Organic semiconductors Organic compounds - Electric properties |
| ISBN | 9780849392849 |
| Classificazione |
LC TK7871
621.3.2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISALENTO-991002784299707536 |
| Boca Raton : CRC Press, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Salento | ||
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Introduction to organic semiconductor heterojunctions [[electronic resource] /] / Donghang Yan, Haibo Wang, Baoxun Du
| Introduction to organic semiconductor heterojunctions [[electronic resource] /] / Donghang Yan, Haibo Wang, Baoxun Du |
| Autore | Yan Donghang |
| Pubbl/distr/stampa | Singapore, : Wiley, c2010 |
| Descrizione fisica | 1 online resource (262 p.) |
| Disciplina | 621.3815/2 |
| Altri autori (Persone) |
WangHaibo <1978->
DuBaoxun |
| Soggetto topico |
Heterojunctions
Organic semiconductors |
| ISBN |
1-282-81681-0
9786612816819 0-470-82595-2 0-470-82596-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
INTRODUCTION TO ORGANIC SEMICONDUCTOR HETEROJUNCTIONS; Contents; Foreword; Preface; About the Authors; 1 Organic Heterostructure in Electronic Devices; 1.1 Organic Light-Emitting Diodes; 1.2 Ambipolar Organic Field-Effect Transistors; 1.3 Organic Photovoltaic Cells; 1.4 Parameters in Thin-Film Transistors; References; 2 Weak Epitaxy Growth of Organic Semiconductor Thin Film; 2.1 Fabrication of Organic Ultrathin Film by Vacuum Deposition; 2.1.1 Organic Thin Film of Molecular Beam Epitaxy; 2.1.2 Organic Thin Film of Vapor Deposition; 2.1.3 Oriented Organic Molecular Thin Film
2.1.4 Organic Molecular Thin Film of Vapor Deposition Controlled by Kinetics and Thermodynamics2.2 Vapor-Deposited Thin Film of Rod-Like and Banana-Shaped Organic Molecules; 2.2.1 Vapor-Deposited Thin Film of Pentacene; 2.2.2 Vapor-Deposited Thin Film of α-Hexathiophene; 2.2.3 Vapor-Deposited Thin Film of Banana-Shaped Organic Molecule; 2.2.4 Vapor-Deposited Thin Film of Para-Sexiphenyl; 2.3 Heteroepitaxy of Disk-Like Organic Molecule on Para-Sexiphenyl Ultrathin Film by Vapor Deposition; 2.3.1 p-6P and Planar Metal Phthalocyanines; 2.3.2 p-6P and Nonplanar Metal Phthalocyanine 2.3.3 Heteroepitaxy Growth of Perylene Diimide Derivatives on p-6P2.4 Evolution of Film Growth 2,5-Bis (4-Biphenylyl) Bithiophene (BP2T); 2.4.1 Growth Behavior of BP2T Thin Films; 2.4.2 Heteroepitaxy Growth of ZnPc on BP2T Thin Films; 2.5 Heteroepitaxy Between Disk-Like Molecules; 2.5.1 Stability of H2Pc Film Fabricated by WEG; 2.5.2 WEG of H2Pc Film by Kinetic Control; 2.5.3 Heteroepitaxy Growth of F16CuPc on H2Pc Thin Film; 2.6 Perspectives; 2.6.1 Nucleation Process of Organic Ultrathin Film; 2.6.2 Contacted and Oriented Process of the Nucleus on the Substrate 2.6.3 Liquid-Crystal-Like Behavior and Flexible Boundary of Organic Ultrathin Film2.6.4 Extent of Liquid-Crystal-Like Behavior of Organic Ultrathin Film; 2.6.5 Weak Epitaxy Growth of Organic Ultrathin Film; References; 3 Interfacial Electronic Structure in Organic Semiconductor Heterojunctions; 3.1 Ambipolar Organic Transistors and Organic Heterostructures; 3.2 CuPc/F16CuPc Heterojunction Effect; 3.2.1 Normally On Operation Mode of CuPc/F16CuPc Heterojunction Transistors; 3.2.2 Experiment of Planar Heterojunction Diode; 3.2.3 Carrier Accumulation at CuPc/F16CuPc Heterojunction Interface 3.2.4 CuPc/F16CuPc Heterojunction Diodes with Reverse Rectifying Characteristics3.2.5 Charge Accumulation Thickness in CuPc/F16CuPc Heterojunction Films; 3.2.6 Direct Measurement of CuPc/F16CuPc Interfacial Electronic Structure by UPS; 3.2.7 Difference in UPS Measurement Results; 3.3 Anderson Rule and Ideal Interfacial Electronic Structure of CuPc/F16CuPc Heterojunction; 3.3.1 Anderson Affinity Rule; 3.3.2 Ideal Interfacial Electronic Structure for the CuPc/F16CuPc Heterojunction; 3.4 Organic and Inorganic Semiconductor Heterojunction 3.4.1 Comparison of the Organic Accumulation Heterojunction and Inorganic p-n Homojunction |
| Record Nr. | UNINA-9910139397403321 |
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Yan Donghang
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| Singapore, : Wiley, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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