Cross-linked polymers as dielectrics for organic field-effect transistors / / von Zied Fahem |
Autore | Fahem Zied |
Edizione | [1. Auflage.] |
Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2013 |
Descrizione fisica | 1 online resource (104 pages) : illustrations |
Disciplina | 537.622 |
Soggetto topico |
Organic field-effect transistors
Polymer networks |
Soggetto genere / forma | Electronic books. |
ISBN | 3-7369-4561-2 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910511656203321 |
Fahem Zied | ||
Gottingen, [Germany] : , : Cuvillier Verlag, , 2013 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Cross-linked polymers as dielectrics for organic field-effect transistors / / von Zied Fahem |
Autore | Fahem Zied |
Edizione | [1. Auflage.] |
Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2013 |
Descrizione fisica | 1 online resource (104 pages) : illustrations |
Disciplina | 537.622 |
Soggetto topico |
Organic field-effect transistors
Polymer networks |
ISBN | 3-7369-4561-2 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910795098703321 |
Fahem Zied | ||
Gottingen, [Germany] : , : Cuvillier Verlag, , 2013 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Cross-linked polymers as dielectrics for organic field-effect transistors / / von Zied Fahem |
Autore | Fahem Zied |
Edizione | [1. Auflage.] |
Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2013 |
Descrizione fisica | 1 online resource (104 pages) : illustrations |
Disciplina | 537.622 |
Soggetto topico |
Organic field-effect transistors
Polymer networks |
ISBN | 3-7369-4561-2 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910813321003321 |
Fahem Zied | ||
Gottingen, [Germany] : , : Cuvillier Verlag, , 2013 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Integrated circuits, photodiodes and organic field effect transistors [[electronic resource] /] / Robert McIntire and Pierre Donnell, editors |
Pubbl/distr/stampa | New York, : Nova Science Publishers, c2009 |
Descrizione fisica | 1 online resource (458 p.) |
Disciplina | 621.3815 |
Altri autori (Persone) |
McIntireRobert
DonnellPierre |
Collana | Environmental Research Advances |
Soggetto topico |
Diodes
Organic field-effect transistors |
Soggetto genere / forma | Electronic books. |
ISBN | 1-61761-868-3 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
""INTEGRATED CIRCUITS,PHOTODIODES AND ORGANIC FIELDEFFECT TRANSISTORS""; ""CONTENTS""; ""PREFACE""; ""RESEARCH AND REVIEW STUDIES""; ""METAMATERIALS TECHNOLOGY: APPLICATIONTO RADIOFREQUENCY AND MICROWAVE CIRCUITS""; ""ABSTRACT""; ""1. INTRODUCTION TO METAMATERIALS""; ""2. METAMATERIALS IN PLANAR TECHNOLOGY:METAMATERIAL TRANSMISSION LINES""; ""2.1. The Dual Transmission Line Concept""; ""2.2. CL-Loaded Lines: The Composite Right/Left Handed TransmissionLine Concept""; ""2.3. Resonant Type Metamaterial Transmission Lines""; ""3. APPLICATIONS OF METAMATERIAL TRANSMISSION LINES""
""3.1. Metamaterial Filters""""3.1.1. Stop Band Filters: Application to Spurious Suppression in ConventionalFilters""; ""3.1.2. Narrow Band Pass Filters and Diplexers""; ""3.1.3. Wide and Ultra Wide Band (UWB) Pass Filters""; ""3.1.4. Metamaterial Based Filters Subjected to Standard Responses:A Design Methodology""; ""3.2. Enhanced Bandwidth Components""; ""3.3. Multiband Components""; ""4. CONCLUSION""; ""REFERENCES""; ""RELIABILITY ASSESSMENT OF INTEGRATEDCIRCUITS AND ITS MISCONCEPTION""; ""ABSTRACT""; ""I. THE IMPORTANCE OF INTEGRATED CIRCUIT RELIABILITY"" ""II. COMMON RELIABILITY PRACTICES IN INTEGRATEDCIRCUIT INDUSTRY""""1. Process Reliability Test in Wafer Fabrication Manufacturers""; ""2. Product Reliability Tests in IC Assembly and Packaging Manufacturers""; ""3. Highly Accelerated Stress Test (HAST)""; ""III. MISCONCEPTIONS IN COMMON RELIABILITY ASSESSMENTOF INTEGRATED CIRCUITS""; ""1. Zero Failure Represents Good Reliability""; ""2. Higher MTTF Represents Better Reliability""; ""3. MTTF Is the Mean Failure Time""; ""4. Exponential Distribution Is Sufficient to Analyze the Test Data"" ""5. The Higher the Stress, the More Effective Is the Reliability Test""""A. Masked Failure Mechanism""; ""B. Variation of Failure Mechanism""; ""6. All Test Data Are Valid""; ""7. Only One Failure Mechanism Exist in the Failed Units""; ""8. Probability Plot Is Sufficient for Test Data Analysis""; ""9. Small Sample Size Is Sufficient""; ""10. The Important of Confidence Interval""; ""IV. CONCLUSION""; ""REFERENCES""; ""DESIGN OF A MULTICHANNEL INTEGRATEDBIOSENSOR CHIP AND MICROELECTRONIC SYSTEMFOR EXTRACELLULAR NEURAL RECORDING""; ""ABSTRACT""; ""1. INTRODUCTION""; ""2. SYSTEM OVERVIEW"" ""3. SYSTEM ARCHITECTURE AND DESIGN""""3.1. Neural Signal Input""; ""3.2. Preamplifier Buffers""; ""3.3. Analysis and Design of the Two-Stage Amplifier BasedPreamplifier Buffer""; ""3.3.1. Device Model""; ""3.3.2. Frequency Response and Pole/Zero Locations""; ""3.3.3. Output Swing""; ""3.3.4. Common-Mode Input Range""; ""3.3.5. Internal Slew Rate""; ""3.3.6. External Slew Rate""; ""3.3.7. Systematic Input-Referred Offset Voltage Minimization""; ""3.3.8. Input-Referred Thermal Noise""; ""3.3.9. Preamplifier Buffer Design""; ""3.4. Channels Addressing and Sequencing"" ""3.5. Biasing Circuitry"" |
Record Nr. | UNINA-9910465406503321 |
New York, : Nova Science Publishers, c2009 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Integrated circuits, photodiodes and organic field effect transistors [[electronic resource] /] / Robert McIntire and Pierre Donnell, editors |
Pubbl/distr/stampa | New York, : Nova Science Publishers, c2009 |
Descrizione fisica | 1 online resource (458 p.) |
Disciplina | 621.3815 |
Altri autori (Persone) |
McIntireRobert
DonnellPierre |
Collana | Environmental Research Advances |
Soggetto topico |
Diodes
Organic field-effect transistors |
ISBN | 1-61761-868-3 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
""INTEGRATED CIRCUITS,PHOTODIODES AND ORGANIC FIELDEFFECT TRANSISTORS""; ""CONTENTS""; ""PREFACE""; ""RESEARCH AND REVIEW STUDIES""; ""METAMATERIALS TECHNOLOGY: APPLICATIONTO RADIOFREQUENCY AND MICROWAVE CIRCUITS""; ""ABSTRACT""; ""1. INTRODUCTION TO METAMATERIALS""; ""2. METAMATERIALS IN PLANAR TECHNOLOGY:METAMATERIAL TRANSMISSION LINES""; ""2.1. The Dual Transmission Line Concept""; ""2.2. CL-Loaded Lines: The Composite Right/Left Handed TransmissionLine Concept""; ""2.3. Resonant Type Metamaterial Transmission Lines""; ""3. APPLICATIONS OF METAMATERIAL TRANSMISSION LINES""
""3.1. Metamaterial Filters""""3.1.1. Stop Band Filters: Application to Spurious Suppression in ConventionalFilters""; ""3.1.2. Narrow Band Pass Filters and Diplexers""; ""3.1.3. Wide and Ultra Wide Band (UWB) Pass Filters""; ""3.1.4. Metamaterial Based Filters Subjected to Standard Responses:A Design Methodology""; ""3.2. Enhanced Bandwidth Components""; ""3.3. Multiband Components""; ""4. CONCLUSION""; ""REFERENCES""; ""RELIABILITY ASSESSMENT OF INTEGRATEDCIRCUITS AND ITS MISCONCEPTION""; ""ABSTRACT""; ""I. THE IMPORTANCE OF INTEGRATED CIRCUIT RELIABILITY"" ""II. COMMON RELIABILITY PRACTICES IN INTEGRATEDCIRCUIT INDUSTRY""""1. Process Reliability Test in Wafer Fabrication Manufacturers""; ""2. Product Reliability Tests in IC Assembly and Packaging Manufacturers""; ""3. Highly Accelerated Stress Test (HAST)""; ""III. MISCONCEPTIONS IN COMMON RELIABILITY ASSESSMENTOF INTEGRATED CIRCUITS""; ""1. Zero Failure Represents Good Reliability""; ""2. Higher MTTF Represents Better Reliability""; ""3. MTTF Is the Mean Failure Time""; ""4. Exponential Distribution Is Sufficient to Analyze the Test Data"" ""5. The Higher the Stress, the More Effective Is the Reliability Test""""A. Masked Failure Mechanism""; ""B. Variation of Failure Mechanism""; ""6. All Test Data Are Valid""; ""7. Only One Failure Mechanism Exist in the Failed Units""; ""8. Probability Plot Is Sufficient for Test Data Analysis""; ""9. Small Sample Size Is Sufficient""; ""10. The Important of Confidence Interval""; ""IV. CONCLUSION""; ""REFERENCES""; ""DESIGN OF A MULTICHANNEL INTEGRATEDBIOSENSOR CHIP AND MICROELECTRONIC SYSTEMFOR EXTRACELLULAR NEURAL RECORDING""; ""ABSTRACT""; ""1. INTRODUCTION""; ""2. SYSTEM OVERVIEW"" ""3. SYSTEM ARCHITECTURE AND DESIGN""""3.1. Neural Signal Input""; ""3.2. Preamplifier Buffers""; ""3.3. Analysis and Design of the Two-Stage Amplifier BasedPreamplifier Buffer""; ""3.3.1. Device Model""; ""3.3.2. Frequency Response and Pole/Zero Locations""; ""3.3.3. Output Swing""; ""3.3.4. Common-Mode Input Range""; ""3.3.5. Internal Slew Rate""; ""3.3.6. External Slew Rate""; ""3.3.7. Systematic Input-Referred Offset Voltage Minimization""; ""3.3.8. Input-Referred Thermal Noise""; ""3.3.9. Preamplifier Buffer Design""; ""3.4. Channels Addressing and Sequencing"" ""3.5. Biasing Circuitry"" |
Record Nr. | UNINA-9910791834003321 |
New York, : Nova Science Publishers, c2009 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Integrated circuits, photodiodes and organic field effect transistors / / Robert McIntire and Pierre Donnell, editors |
Edizione | [1st ed.] |
Pubbl/distr/stampa | New York, : Nova Science Publishers, c2009 |
Descrizione fisica | 1 online resource (458 p.) |
Disciplina | 621.3815 |
Altri autori (Persone) |
McIntireRobert
DonnellPierre |
Collana | Environmental Research Advances |
Soggetto topico |
Diodes
Organic field-effect transistors |
ISBN | 1-61761-868-3 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
""INTEGRATED CIRCUITS,PHOTODIODES AND ORGANIC FIELDEFFECT TRANSISTORS""; ""CONTENTS""; ""PREFACE""; ""RESEARCH AND REVIEW STUDIES""; ""METAMATERIALS TECHNOLOGY: APPLICATIONTO RADIOFREQUENCY AND MICROWAVE CIRCUITS""; ""ABSTRACT""; ""1. INTRODUCTION TO METAMATERIALS""; ""2. METAMATERIALS IN PLANAR TECHNOLOGY:METAMATERIAL TRANSMISSION LINES""; ""2.1. The Dual Transmission Line Concept""; ""2.2. CL-Loaded Lines: The Composite Right/Left Handed TransmissionLine Concept""; ""2.3. Resonant Type Metamaterial Transmission Lines""; ""3. APPLICATIONS OF METAMATERIAL TRANSMISSION LINES""
""3.1. Metamaterial Filters""""3.1.1. Stop Band Filters: Application to Spurious Suppression in ConventionalFilters""; ""3.1.2. Narrow Band Pass Filters and Diplexers""; ""3.1.3. Wide and Ultra Wide Band (UWB) Pass Filters""; ""3.1.4. Metamaterial Based Filters Subjected to Standard Responses:A Design Methodology""; ""3.2. Enhanced Bandwidth Components""; ""3.3. Multiband Components""; ""4. CONCLUSION""; ""REFERENCES""; ""RELIABILITY ASSESSMENT OF INTEGRATEDCIRCUITS AND ITS MISCONCEPTION""; ""ABSTRACT""; ""I. THE IMPORTANCE OF INTEGRATED CIRCUIT RELIABILITY"" ""II. COMMON RELIABILITY PRACTICES IN INTEGRATEDCIRCUIT INDUSTRY""""1. Process Reliability Test in Wafer Fabrication Manufacturers""; ""2. Product Reliability Tests in IC Assembly and Packaging Manufacturers""; ""3. Highly Accelerated Stress Test (HAST)""; ""III. MISCONCEPTIONS IN COMMON RELIABILITY ASSESSMENTOF INTEGRATED CIRCUITS""; ""1. Zero Failure Represents Good Reliability""; ""2. Higher MTTF Represents Better Reliability""; ""3. MTTF Is the Mean Failure Time""; ""4. Exponential Distribution Is Sufficient to Analyze the Test Data"" ""5. The Higher the Stress, the More Effective Is the Reliability Test""""A. Masked Failure Mechanism""; ""B. Variation of Failure Mechanism""; ""6. All Test Data Are Valid""; ""7. Only One Failure Mechanism Exist in the Failed Units""; ""8. Probability Plot Is Sufficient for Test Data Analysis""; ""9. Small Sample Size Is Sufficient""; ""10. The Important of Confidence Interval""; ""IV. CONCLUSION""; ""REFERENCES""; ""DESIGN OF A MULTICHANNEL INTEGRATEDBIOSENSOR CHIP AND MICROELECTRONIC SYSTEMFOR EXTRACELLULAR NEURAL RECORDING""; ""ABSTRACT""; ""1. INTRODUCTION""; ""2. SYSTEM OVERVIEW"" ""3. SYSTEM ARCHITECTURE AND DESIGN""""3.1. Neural Signal Input""; ""3.2. Preamplifier Buffers""; ""3.3. Analysis and Design of the Two-Stage Amplifier BasedPreamplifier Buffer""; ""3.3.1. Device Model""; ""3.3.2. Frequency Response and Pole/Zero Locations""; ""3.3.3. Output Swing""; ""3.3.4. Common-Mode Input Range""; ""3.3.5. Internal Slew Rate""; ""3.3.6. External Slew Rate""; ""3.3.7. Systematic Input-Referred Offset Voltage Minimization""; ""3.3.8. Input-Referred Thermal Noise""; ""3.3.9. Preamplifier Buffer Design""; ""3.4. Channels Addressing and Sequencing"" ""3.5. Biasing Circuitry"" |
Record Nr. | UNINA-9910810477403321 |
New York, : Nova Science Publishers, c2009 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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Interface Engineering in Organic Field-Effect Transistors / / Xuefeng Guo and Hongliang Chen |
Autore | Guo Xuefeng |
Edizione | [First edition.] |
Pubbl/distr/stampa | Weinheim, Germany : , : WILEY-VCH GmbH, , [2023] |
Descrizione fisica | 1 online resource (273 pages) |
Disciplina | 530.417 |
Soggetto topico |
Interfaces (Physical sciences)
Organic field-effect transistors |
Soggetto non controllato |
Chemistry, Physical And Theoretical
Semiconductors Science Technology & Engineering |
ISBN |
3-527-84048-6
3-527-84047-8 3-527-84046-X |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Cover -- Title Page -- Copyright -- Contents -- Preface -- Author Biographies -- List of Acronyms and Abbreviations -- Chapter 1 Introduction -- 1.1 Different Interfaces in OFETs -- 1.2 Brief Historic Overview of Interface Engineering in OFETs -- 1.3 Scope of the Book -- Chapter 2 Interfacial Modification Methods -- 2.1 Noncovalent Modification Methods -- 2.1.1 Charge Insertion Layer at the Electrode Surface -- 2.1.2 Dielectric Surface Passivation Methods -- 2.2 Covalent Modification Methods -- 2.2.1 SAM Modification of Electrodes -- 2.2.2 SAM Modification of Dielectrics -- 2.2.2.1 SAM/SiO2 Dielectrics -- 2.2.2.2 SAM/High‐k Dielectrics -- 2.2.2.3 Self‐Assembled Monolayer Field‐Effect Transistors (SAMFETs) -- 2.3 Efforts in Developing New Methods -- Chapter 3 Semiconductor/Semiconductor Interface -- 3.1 Influence of Additives on a Material's Nucleation and Morphology -- 3.1.1 Solvent Additives -- 3.1.2 Nucleating Agents -- 3.1.3 Template‐Mediated Crystallization -- 3.1.4 Blending with Insulating Polymers -- 3.1.5 Blending with Polymer Elastomer: Nanoconfinement Effect -- 3.2 Enhancing the Performance Through Semiconductor Heterojunctions -- 3.2.1 Planar Bilayer Heterostructures -- 3.2.2 Molecular‐Level Heterojunction -- 3.2.3 Supramolecular Arrangement of the Heterojunctions -- 3.3 Integrating Molecular Functionalities into Electrical Circuits -- 3.3.1 Charge‐Trapping‐Induced Memory Effect -- 3.3.2 Photochromism‐Induced Switching Effect -- Chapter 4 Semiconductor/Electrode Interface -- 4.1 Work Function Tuning for Better Contact -- 4.1.1 SAM Modification -- 4.1.2 Charge Insertion Layer Modification -- 4.1.3 Polymer‐Based Electrodes -- 4.1.4 Carbon Nanomaterial‐Based Electrodes -- 4.1.5 Covalent Bond Formation at the Molecular Level -- 4.2 Installing Switching Effects at Semiconductor/Electrode Interface.
Chapter 5 Semiconductor/Dielectric Interface -- 5.1 Dielectric Modification to Tune Semiconductor Morphology -- 5.1.1 Dielectric Surface Energy Control -- 5.1.1.1 Modify with SAM -- 5.1.1.2 Surface Modification with Polymers -- 5.1.2 Dielectric Microstructure Design -- 5.1.2.1 Roughness Effect -- 5.1.2.2 Nano‐fabrication Created Microstructure -- 5.1.2.3 Self‐assembled Morphology of Dielectric -- 5.2 Eliminating Interfacial Traps -- 5.2.1 Dielectric Surface Passivation (Treatment) Methods -- 5.2.1.1 Polymer Encapsulation of Dielectrics -- 5.2.1.2 Gap Dielectrics -- 5.2.2 SAM/SiO2 Dielectrics -- 5.2.2.1 Provide Efficient Insulating Barrier Height -- 5.2.2.2 Control Surface Polarity and Carrier Density -- 5.2.3 SAM/High‐k Dielectrics -- 5.2.3.1 Fundamentals of SAM‐Modified High‐k Dielectrics -- 5.2.3.2 SAM/High‐k Hybrid Dielectrics for Flexible Substrate -- 5.2.4 Self‐assembled Monolayer Field‐Effect Transistors (SAMFETs) -- 5.2.4.1 Molecule Design for SAMFETs -- 5.2.4.2 Morphology Control of SAMFET -- 5.3 Integrating New Functionalities -- 5.3.1 Photoresponsive Dielectrics -- 5.3.2 Other External Stimuli‐Responsive Dielectrics -- 5.3.2.1 Pressure Sensor -- 5.3.2.2 Thermal Sensor -- 5.3.2.3 Magnetic Sensor -- 5.3.2.4 Multifunctional Sensor -- 5.3.3 Integrating Memory Effect at the Dielectrics -- Chapter 6 Semiconductor/Environment Interface -- 6.1 Device Optimization to Improve Sensing Performance -- 6.1.1 Monolayer Functionalization -- 6.1.2 Bilayer Heterojunction Approach -- 6.1.3 Remote Floating Gate -- 6.2 OECT‐Based and EGOFET‐Based Sensors -- Chapter 7 Interfacing Organic Electronics with Biology -- 7.1 Integration of OFETs/OECTs with Nonelectrogenic Cells -- 7.2 Integration of Flexible Bioelectronics with Electrogenic Cells -- 7.3 Light/Cell/Device Interfaces -- Chapter 8 Concluding Remarks and Outlook -- 8.1 New Challenges in Molecular Design. 8.2 High‐Quality OSC Films: Self‐Assembly Control -- 8.3 High‐Performance Scalable Flexible Optoelectronics -- 8.4 Exploration of Novel Structures: Organic/2D Heterostructures and Vertical Structures -- 8.5 Instability: Stability in Aqueous Media and Thermal Stability in Hygienic Applications -- 8.6 Multifunctional Sensor Systems -- References -- Index -- EULA. |
Record Nr. | UNINA-9910830898303321 |
Guo Xuefeng | ||
Weinheim, Germany : , : WILEY-VCH GmbH, , [2023] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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Organic electronics II : more materials and applications / / edited by Hagen Klauk |
Edizione | [1st ed.] |
Pubbl/distr/stampa | Weinheim, : Wiley-VCH, 2012 |
Descrizione fisica | 1 online resource (442 p.) |
Disciplina | 621.3815284 |
Altri autori (Persone) | KlaukHagen |
Soggetto topico |
Organic electronics
Organic field-effect transistors Thin film transistors Organic thin films |
ISBN |
3-527-64022-3
1-283-86985-3 3-527-64021-5 3-527-64023-1 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | pt. 1. Materials -- pt. 2. Manufacturing -- pt. 3. Applications. |
Record Nr. | UNINA-9910141252403321 |
Weinheim, : Wiley-VCH, 2012 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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