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Advanced device materials
| Advanced device materials |
| Pubbl/distr/stampa | [Leeds] : , : Maney Publishing, , 2015-2018 |
| Descrizione fisica | 1 online resource |
| Disciplina | 620.115 |
| Soggetto topico |
Nanostructured materials
Optoelectronics - Materials Optoelectronics - Devices |
| Soggetto genere / forma | Periodicals. |
| ISSN | 2055-0316 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Periodico |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910315220303321 |
| [Leeds] : , : Maney Publishing, , 2015-2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced device materials
| Advanced device materials |
| Pubbl/distr/stampa | [Leeds] : , : Maney Publishing, , 2015-2018 |
| Descrizione fisica | 1 online resource |
| Disciplina | 620.115 |
| Soggetto topico |
Nanostructured materials
Optoelectronics - Materials Optoelectronics - Devices |
| Soggetto genere / forma | Periodicals. |
| ISSN | 2055-0316 |
| Formato | Materiale a stampa |
| Livello bibliografico | Periodico |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996335850803316 |
| [Leeds] : , : Maney Publishing, , 2015-2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Advanced functional materials
| Advanced functional materials |
| Pubbl/distr/stampa | Weinheim, Fed. Rep. of Germany, : Wiley-VCH Verlag, ©2001- |
| Descrizione fisica | 1 online resource |
| Soggetto topico |
Molecular electronics - Materials
Electrooptics - Materials Optoelectronics - Materials Materials Electronics - Materials Optical materials Biophysics Chemistry Nanotechnology Matériaux Électronique - Matériaux Matériaux optiques Électronique moléculaire - Matériaux Matériaux électro-optiques Optoélectronique - Matériaux Biophysique Chimie Nanotechnologie chemistry |
| Soggetto genere / forma | Periodicals. |
| ISSN | 1616-3028 |
| Formato | Materiale a stampa |
| Livello bibliografico | Periodico |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910134733403321 |
| Weinheim, Fed. Rep. of Germany, : Wiley-VCH Verlag, ©2001- | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced functional materials
| Advanced functional materials |
| Pubbl/distr/stampa | Weinheim, Fed. Rep. of Germany, : Wiley-VCH Verlag, ©2001- |
| Descrizione fisica | 1 online resource |
| Soggetto topico |
Molecular electronics - Materials
Electrooptics - Materials Optoelectronics - Materials Materials Electronics - Materials Optical materials Biophysics Chemistry Nanotechnology Matériaux Électronique - Matériaux Matériaux optiques Électronique moléculaire - Matériaux Matériaux électro-optiques Optoélectronique - Matériaux Biophysique Chimie Nanotechnologie chemistry |
| Soggetto genere / forma | Periodicals. |
| ISSN | 1616-3028 |
| Formato | Materiale a stampa |
| Livello bibliografico | Periodico |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996203318103316 |
| Weinheim, Fed. Rep. of Germany, : Wiley-VCH Verlag, ©2001- | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Advanced materials for optics and electronics
| Advanced materials for optics and electronics |
| Pubbl/distr/stampa | [Chichester, England], : John Wiley & Sons, Ltd., c1992-c2000 |
| Disciplina | 621 |
| Soggetto topico |
Molecular electronics - Materials
Electrooptics - Materials Optoelectronics - Materials |
| ISSN | 1099-0712 |
| Formato | Materiale a stampa |
| Livello bibliografico | Periodico |
| Lingua di pubblicazione | eng |
| Altri titoli varianti |
Adv. mater. opt. electron
Advanced Materials for Optics and Electronics (currently known as Advanced Functional Materials) Advanced Functional Materials |
| Record Nr. | UNISA-996198574103316 |
| [Chichester, England], : John Wiley & Sons, Ltd., c1992-c2000 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Advanced materials for optics and electronics
| Advanced materials for optics and electronics |
| Pubbl/distr/stampa | [Chichester, England], : John Wiley & Sons, Ltd., c1992-c2000 |
| Disciplina | 621 |
| Soggetto topico |
Molecular electronics - Materials
Electrooptics - Materials Optoelectronics - Materials |
| ISSN | 1099-0712 |
| Formato | Materiale a stampa |
| Livello bibliografico | Periodico |
| Lingua di pubblicazione | eng |
| Altri titoli varianti |
Adv. mater. opt. electron
Advanced Materials for Optics and Electronics (currently known as Advanced Functional Materials) Advanced Functional Materials |
| Record Nr. | UNINA-9910329458103321 |
| [Chichester, England], : John Wiley & Sons, Ltd., c1992-c2000 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper
| Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper |
| Pubbl/distr/stampa | Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
| Descrizione fisica | 1 online resource (579 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | CapperPeter |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Optoelectronics - Materials Crystal growth |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-24169-1
9786610241699 0-470-01208-0 0-470-01207-2 |
| Classificazione | 51.12 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; Series Preface; Preface; Acknowledgements; List of Contributors; Abbreviations; 1 Silicon; 1.1 Introduction; 1.2 Crystal-growth method and technology; 1.2.1 High-purity polycrystalline silicon; 1.2.2 CZ-Si growth apparatus and related furnace parts; 1.2.3 CZ-Si crystal growth; 1.2.4 FZ (float-zone) Si crystal growth; 1.2.5 Wafer processing; 1.3 Melt process; 1.3.1 Analysis of heat- and mass-transfer processes; 1.3.2 Oxygen transportation process and mechanism; 1.3.3 Control of oxygen concentration by application of cusp magnetic field; 1.4 Defect and wafer quality
1.4.1 Oxygen precipitation and gettering1.4.2 Grown-in defects; 1.5 Concluding remarks; References; 2 Growth of Gallium Arsenide; 2.1 Introduction; 2.2 Doping considerations; 2.3 Growth techniques; 2.3.1 Horizontal Bridgman and horizontal gradient freeze techniques; 2.3.2 Liquid encapsulated Czochralski (LEC) technique; 2.3.3 Vertical gradient freeze (VGF) technique; 2.4 Crystalline defects in GaAs; 2.4.1 Defects in melt-grown, semi-insulating GaAs; 2.5 Impurity and defect analysis of GaAs (chemical); 2.6 Impurity and defect analysis of GaAs (electrical) 2.6.1 Introduction to the electrical analysis of defects in GaAs2.7 Impurity and defect analysis of GaAs (optical); 2.7.1 Optical analysis of defects in GaAs; 2.8 Conclusions; Acknowledgments; References; 3 Computer Modelling of Bulk Crystal Growth; 3.1 Introduction; 3.2 Present state of bulk crystal growth modelling; 3.3 Bulk crystal growth processes; 3.4 Transport modelling in bulk crystal growth; 3.4.1 Governing equations; 3.4.2 Boundary conditions; 3.4.3 Continuum interface representation; 3.4.4 Radiation heat-transfer modelling; 3.4.5 Noninertial reference frames; 3.4.6 Magnetic fields 3.4.7 Turbulence3.5 Computer-aided analysis; 3.5.1 Discretization; 3.5.2 Numerical interface representation; 3.5.3 Deforming grids and ALE methods; 3.5.4 A simple fixed-grid method; 3.5.5 Quasi-steady-state models; 3.6 Modelling examples; 3.6.1 Float-zone refinement of silicon sheets; 3.6.2 Bridgman growth of CZT: axisymmetric analysis; 3.6.3 Bridgman growth of CZT: three-dimensional analysis; 3.6.4 Morphological stability in solution growth of KTP; 3.7 Summary and outlook; Acknowledgments; References; 4 Indium Phosphide Crystal Growth; 4.1 Introduction; 4.2 Material properties; 4.3 Hazards 4.4 Crystal structure4.5 Synthesis; 4.6 Single-crystal growth; 4.7 Defects; 4.7.1 Twins; 4.7.2 Dislocations; 4.8 Dislocation reduction; 4.9 VGF growth; 4.10 Crystal-growth modelling; 4.11 Dopants; 4.11.1 N-type InP; 4.11.2 P-type InP; 4.11.3 Semi-insulating InP; 4.12 Conclusion; Acknowledgements; References; 5 Bulk Growth of InSb and Related Ternary Alloys; 5.1 Introduction-a little history; 5.2 Why the interest?; 5.3 Key properties; 5.3.1 Crystallography; 5.3.2 Growth-critical material parameters; 5.3.3 Common growth conditions; 5.3.4 Impurities and dopants; 5.4 Czochralski growth 5.4.1 Challenges |
| Record Nr. | UNINA-9910143746003321 |
| Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper
| Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper |
| Pubbl/distr/stampa | Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
| Descrizione fisica | 1 online resource (579 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | CapperPeter |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Optoelectronics - Materials Crystal growth |
| ISBN |
1-280-24169-1
9786610241699 0-470-01208-0 0-470-01207-2 |
| Classificazione | 51.12 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; Series Preface; Preface; Acknowledgements; List of Contributors; Abbreviations; 1 Silicon; 1.1 Introduction; 1.2 Crystal-growth method and technology; 1.2.1 High-purity polycrystalline silicon; 1.2.2 CZ-Si growth apparatus and related furnace parts; 1.2.3 CZ-Si crystal growth; 1.2.4 FZ (float-zone) Si crystal growth; 1.2.5 Wafer processing; 1.3 Melt process; 1.3.1 Analysis of heat- and mass-transfer processes; 1.3.2 Oxygen transportation process and mechanism; 1.3.3 Control of oxygen concentration by application of cusp magnetic field; 1.4 Defect and wafer quality
1.4.1 Oxygen precipitation and gettering1.4.2 Grown-in defects; 1.5 Concluding remarks; References; 2 Growth of Gallium Arsenide; 2.1 Introduction; 2.2 Doping considerations; 2.3 Growth techniques; 2.3.1 Horizontal Bridgman and horizontal gradient freeze techniques; 2.3.2 Liquid encapsulated Czochralski (LEC) technique; 2.3.3 Vertical gradient freeze (VGF) technique; 2.4 Crystalline defects in GaAs; 2.4.1 Defects in melt-grown, semi-insulating GaAs; 2.5 Impurity and defect analysis of GaAs (chemical); 2.6 Impurity and defect analysis of GaAs (electrical) 2.6.1 Introduction to the electrical analysis of defects in GaAs2.7 Impurity and defect analysis of GaAs (optical); 2.7.1 Optical analysis of defects in GaAs; 2.8 Conclusions; Acknowledgments; References; 3 Computer Modelling of Bulk Crystal Growth; 3.1 Introduction; 3.2 Present state of bulk crystal growth modelling; 3.3 Bulk crystal growth processes; 3.4 Transport modelling in bulk crystal growth; 3.4.1 Governing equations; 3.4.2 Boundary conditions; 3.4.3 Continuum interface representation; 3.4.4 Radiation heat-transfer modelling; 3.4.5 Noninertial reference frames; 3.4.6 Magnetic fields 3.4.7 Turbulence3.5 Computer-aided analysis; 3.5.1 Discretization; 3.5.2 Numerical interface representation; 3.5.3 Deforming grids and ALE methods; 3.5.4 A simple fixed-grid method; 3.5.5 Quasi-steady-state models; 3.6 Modelling examples; 3.6.1 Float-zone refinement of silicon sheets; 3.6.2 Bridgman growth of CZT: axisymmetric analysis; 3.6.3 Bridgman growth of CZT: three-dimensional analysis; 3.6.4 Morphological stability in solution growth of KTP; 3.7 Summary and outlook; Acknowledgments; References; 4 Indium Phosphide Crystal Growth; 4.1 Introduction; 4.2 Material properties; 4.3 Hazards 4.4 Crystal structure4.5 Synthesis; 4.6 Single-crystal growth; 4.7 Defects; 4.7.1 Twins; 4.7.2 Dislocations; 4.8 Dislocation reduction; 4.9 VGF growth; 4.10 Crystal-growth modelling; 4.11 Dopants; 4.11.1 N-type InP; 4.11.2 P-type InP; 4.11.3 Semi-insulating InP; 4.12 Conclusion; Acknowledgements; References; 5 Bulk Growth of InSb and Related Ternary Alloys; 5.1 Introduction-a little history; 5.2 Why the interest?; 5.3 Key properties; 5.3.1 Crystallography; 5.3.2 Growth-critical material parameters; 5.3.3 Common growth conditions; 5.3.4 Impurities and dopants; 5.4 Czochralski growth 5.4.1 Challenges |
| Record Nr. | UNINA-9910829932303321 |
| Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper
| Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper |
| Pubbl/distr/stampa | Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
| Descrizione fisica | 1 online resource (579 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | CapperPeter |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Optoelectronics - Materials Crystal growth |
| ISBN |
1-280-24169-1
9786610241699 0-470-01208-0 0-470-01207-2 |
| Classificazione | 51.12 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; Series Preface; Preface; Acknowledgements; List of Contributors; Abbreviations; 1 Silicon; 1.1 Introduction; 1.2 Crystal-growth method and technology; 1.2.1 High-purity polycrystalline silicon; 1.2.2 CZ-Si growth apparatus and related furnace parts; 1.2.3 CZ-Si crystal growth; 1.2.4 FZ (float-zone) Si crystal growth; 1.2.5 Wafer processing; 1.3 Melt process; 1.3.1 Analysis of heat- and mass-transfer processes; 1.3.2 Oxygen transportation process and mechanism; 1.3.3 Control of oxygen concentration by application of cusp magnetic field; 1.4 Defect and wafer quality
1.4.1 Oxygen precipitation and gettering1.4.2 Grown-in defects; 1.5 Concluding remarks; References; 2 Growth of Gallium Arsenide; 2.1 Introduction; 2.2 Doping considerations; 2.3 Growth techniques; 2.3.1 Horizontal Bridgman and horizontal gradient freeze techniques; 2.3.2 Liquid encapsulated Czochralski (LEC) technique; 2.3.3 Vertical gradient freeze (VGF) technique; 2.4 Crystalline defects in GaAs; 2.4.1 Defects in melt-grown, semi-insulating GaAs; 2.5 Impurity and defect analysis of GaAs (chemical); 2.6 Impurity and defect analysis of GaAs (electrical) 2.6.1 Introduction to the electrical analysis of defects in GaAs2.7 Impurity and defect analysis of GaAs (optical); 2.7.1 Optical analysis of defects in GaAs; 2.8 Conclusions; Acknowledgments; References; 3 Computer Modelling of Bulk Crystal Growth; 3.1 Introduction; 3.2 Present state of bulk crystal growth modelling; 3.3 Bulk crystal growth processes; 3.4 Transport modelling in bulk crystal growth; 3.4.1 Governing equations; 3.4.2 Boundary conditions; 3.4.3 Continuum interface representation; 3.4.4 Radiation heat-transfer modelling; 3.4.5 Noninertial reference frames; 3.4.6 Magnetic fields 3.4.7 Turbulence3.5 Computer-aided analysis; 3.5.1 Discretization; 3.5.2 Numerical interface representation; 3.5.3 Deforming grids and ALE methods; 3.5.4 A simple fixed-grid method; 3.5.5 Quasi-steady-state models; 3.6 Modelling examples; 3.6.1 Float-zone refinement of silicon sheets; 3.6.2 Bridgman growth of CZT: axisymmetric analysis; 3.6.3 Bridgman growth of CZT: three-dimensional analysis; 3.6.4 Morphological stability in solution growth of KTP; 3.7 Summary and outlook; Acknowledgments; References; 4 Indium Phosphide Crystal Growth; 4.1 Introduction; 4.2 Material properties; 4.3 Hazards 4.4 Crystal structure4.5 Synthesis; 4.6 Single-crystal growth; 4.7 Defects; 4.7.1 Twins; 4.7.2 Dislocations; 4.8 Dislocation reduction; 4.9 VGF growth; 4.10 Crystal-growth modelling; 4.11 Dopants; 4.11.1 N-type InP; 4.11.2 P-type InP; 4.11.3 Semi-insulating InP; 4.12 Conclusion; Acknowledgements; References; 5 Bulk Growth of InSb and Related Ternary Alloys; 5.1 Introduction-a little history; 5.2 Why the interest?; 5.3 Key properties; 5.3.1 Crystallography; 5.3.2 Growth-critical material parameters; 5.3.3 Common growth conditions; 5.3.4 Impurities and dopants; 5.4 Czochralski growth 5.4.1 Challenges |
| Record Nr. | UNINA-9910841721403321 |
| Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Functional materials [[electronic resource] ] : preparation, processing and applications / / [edited by] S. Banerjee, A.K. Tyagi
| Functional materials [[electronic resource] ] : preparation, processing and applications / / [edited by] S. Banerjee, A.K. Tyagi |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | London, : Elsevier, 2012 |
| Descrizione fisica | 1 online resource (731 p.) |
| Disciplina | 620.11 |
| Altri autori (Persone) |
BanerjeeS
TyagiA. K |
| Collana | Elsevier insights |
| Soggetto topico |
Molecular electronics - Materials
Electrooptics - Materials Optoelectronics - Materials |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-283-37488-9
9786613374882 0-12-385143-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Functional Materials; Copyright Page; Contents; Preface; About the Editors; Contributors; 1 Soft Materials - Properties and Applications; 1.1 Introduction to Soft Matter; 1.1.1 Introduction; 1.1.2 Soft Matter: A Viscoelastic Fluid; 1.1.3 Shear Modulus and the Energy Density; 1.2 Intermolecular Interactions in Soft Materials; 1.2.1 Charge-Charge Interaction; 1.2.2 Ion-Dipole Interactions; 1.2.3 Dipole-Dipole Interactions; 1.2.4 Ion-Induced Dipole Interactions; 1.2.5 Dipole-Induced Dipole Interaction; 1.2.6 Induced Dipole-Induced Dipole Interactions; 1.2.7 Hydrogen Bonds
1.2.8 Hydrophobic Interactions1.2.9 Depletion Interactions; 1.3 Colloids; 1.3.1 Interactions Between Colloidal Particles; van der Waals Interaction; Electrostatic Forces Between Surfaces; 1.3.2 DLVO Theory of Colloid Stability; 1.4 Surfactant Assemblies; 1.4.1 Surface Tension and Surface Activity; 1.4.2 Surfactant Aggregation and Hydrophobic Effect; 1.4.3 Thermodynamics of Micelle Formation; 1.4.4 Dynamics of Micelle Formation; 1.4.5 Phase Behaviour of Surfactants; 1.4.6 Packing Parameter and Bending Rigidity; 1.5 Polymer Solutions; 1.5.1 Introduction; 1.5.2 Conformations of Polymer Chains 1.5.3 Size of a Freely Jointed Chain1.5.4 Size of an Ideal Chain with Fixed Bond Angle; 1.5.5 Flexibility of a Polymer Chain; 1.5.6 Polymer Gels; 1.5.7 Theories of Gelation; Classical Theory or Flory-Stockmayer Model; Percolation Theory; 1.5.8 Polyelectrolytes and Counterion Condensation; Counterion condensation; 1.6 Experimental Techniques in Soft Matter; 1.6.1 Scattering Techniques; Light Scattering; Static Light Scattering; Dynamic Light Scattering; Small-Angle Neutron Scattering; Contrast Factor; Determination of Intraparticle Structure; Polydisperse Particles; Guinier Approximation Porod LawDetermination of Interparticle Structure Factor; Small-Angle X-Ray Scattering; 1.6.2 Microscopy; Cryo-Transmission Electron Microscope; 1.6.3 Rheology; 1.7 Applications of Soft Matter; 1.7.1 Stimuli Responsive Materials; 1.7.2 Soft Materials in Drug Delivery; 1.7.3 Nanotechnology Using Soft Materials; 1.7.4 Oil Field Applications; References; 2 Conducting Polymer Sensors, Actuators and Field-Effect Transistors; 2.1 Introduction; 2.2 Synthesis of Conducting Polymers; 2.2.1 Synthesis of Bulk and Fibre Polyindole; 2.2.2 Synthesis of Crystalline Polyaniline 2.2.3 Films of Conducting Polymers2.3 Conducting Polymer Gas Sensors; 2.3.1 Configuration of Chemiresistor Sensors; 2.3.2 Polycarbazole Langmuir-Blodgett Film-Based Sensors; 2.3.3 Polyaniline Nanofibre Sensors; 2.3.4 Composite Poly(3-hexylthiophene):ZnO-Nanowire-Based NO2 Sensors; 2.3.5 Composite Polypyrrole:ZnO-Nanowire-Based Chlorine Sensor; 2.4 Electrochemical Actuators; 2.4.1 Fabrication of PPy-DBS/Au Free-standing Film; 2.4.2 PPy-DBS/Au Free-standing Film as Actuator; 2.5 Conducting Polymer FETs; 2.5.1 Fabrication of Top-Contact FET; 2.5.2 Characteristics of P3HT Active Layer 2.5.3 Transistor Characteristics of P3HT Active Layer |
| Record Nr. | UNINA-9910461644503321 |
| London, : Elsevier, 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
