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Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
| Conference proceedings. ... International Conference on Indium Phosphide and Related Materials |
| Pubbl/distr/stampa | New York, : Institute of Electrical and Electronic Engineers |
| Disciplina | 621.38152 |
| Soggetto topico |
Indium phosphide
Semiconductors - Materials Optoelectronic devices - Materials Indium compounds Electrooptical devices - Materials |
| Soggetto genere / forma | Conference papers and proceedings. |
| Formato | Materiale a stampa  |
| Livello bibliografico | Periodico |
| Lingua di pubblicazione | eng |
| Altri titoli varianti |
IPRM ... conference proceedings
Indium Phosphide and Related Materials Conference International Conference, Indium Phosphide and Related Materials International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week and ... International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (includes ... International Conference on Indium Phosphide & Related Materials (IPRM) & ... International Symposium on Compound Semiconductors (ISCS)) |
| Record Nr. | UNISA-996280119303316 |
| New York, : Institute of Electrical and Electronic Engineers | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
| Conference proceedings. ... International Conference on Indium Phosphide and Related Materials |
| Pubbl/distr/stampa | New York, : Institute of Electrical and Electronic Engineers |
| Disciplina | 621.38152 |
| Soggetto topico |
Indium phosphide
Semiconductors - Materials Optoelectronic devices - Materials Indium compounds Electrooptical devices - Materials |
| Soggetto genere / forma | Conference papers and proceedings. |
| Formato | Materiale a stampa |
| Livello bibliografico | Periodico |
| Lingua di pubblicazione | eng |
| Altri titoli varianti |
IPRM ... conference proceedings
Indium Phosphide and Related Materials Conference International Conference, Indium Phosphide and Related Materials International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week and ... International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (includes ... International Conference on Indium Phosphide & Related Materials (IPRM) & ... International Symposium on Compound Semiconductors (ISCS)) |
| Record Nr. | UNINA-9910626182403321 |
| New York, : Institute of Electrical and Electronic Engineers | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Handbook of organic materials for optical and (opto)electronic devices : properties and applications / / edited by Oksana Ostroverkhova
| Handbook of organic materials for optical and (opto)electronic devices : properties and applications / / edited by Oksana Ostroverkhova |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | Philadelphia, PA : , : Woodhead Pub., , 2013 |
| Descrizione fisica | 1 online resource (832 p.) |
| Disciplina | 621.381045 |
| Altri autori (Persone) | OstroverkhovaOksana |
| Collana | Woodhead Publishing series in electronic and optical materials |
| Soggetto topico |
Optical instruments - Materials
Optoelectronic devices - Materials Organic compounds - Optical properties |
| Soggetto genere / forma | Electronic books. |
| ISBN | 0-85709-876-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | part I. Materials for organic (opto)electronics and nonlinear optics : structure-property relations -- part II. (Opto)electronic and nonlinear optical properties of organic materials and their characterization -- part III. Applications of (opto)electronic and nonlinear optical organic materials in devices. |
| Record Nr. | UNINA-9910462675503321 |
| Philadelphia, PA : , : Woodhead Pub., , 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Handbook of organic materials for optical and (opto)electronic devices : properties and applications / / edited by Oksana Ostroverkhova
| Handbook of organic materials for optical and (opto)electronic devices : properties and applications / / edited by Oksana Ostroverkhova |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | Cambridge, UK : , : Woodhead Publishing, , 2013 |
| Descrizione fisica | 1 online resource (xxvii, 804 pages) : illustrations |
| Disciplina | 621.381045 |
| Collana | Woodhead Publishing series in electronic and optical materials |
| Soggetto topico |
Optoelectronic devices - Materials
Electrooptical devices Optical materials Nonlinear optics Electronic apparatus and appliances - Materials |
| ISBN | 0-85709-876-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | part I. Materials for organic (opto)electronics and nonlinear optics : structure-property relations -- part II. (Opto)electronic and nonlinear optical properties of organic materials and their characterization -- part III. Applications of (opto)electronic and nonlinear optical organic materials in devices. |
| Record Nr. | UNINA-9910787688103321 |
| Cambridge, UK : , : Woodhead Publishing, , 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Handbook of organic materials for optical and (opto)electronic devices : properties and applications / / edited by Oksana Ostroverkhova
| Handbook of organic materials for optical and (opto)electronic devices : properties and applications / / edited by Oksana Ostroverkhova |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | Cambridge, UK : , : Woodhead Publishing, , 2013 |
| Descrizione fisica | 1 online resource (xxvii, 804 pages) : illustrations |
| Disciplina | 621.381045 |
| Collana | Woodhead Publishing series in electronic and optical materials |
| Soggetto topico |
Optoelectronic devices - Materials
Electrooptical devices Optical materials Nonlinear optics Electronic apparatus and appliances - Materials |
| ISBN | 0-85709-876-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | part I. Materials for organic (opto)electronics and nonlinear optics : structure-property relations -- part II. (Opto)electronic and nonlinear optical properties of organic materials and their characterization -- part III. Applications of (opto)electronic and nonlinear optical organic materials in devices. |
| Record Nr. | UNINA-9910814892703321 |
| Cambridge, UK : , : Woodhead Publishing, , 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Liquid phase epitaxy of electronic, optical, and optoelectronic materials [[electronic resource] /] / edited by Peter Capper, Michael Mauk
| Liquid phase epitaxy of electronic, optical, and optoelectronic materials [[electronic resource] /] / edited by Peter Capper, Michael Mauk |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 |
| Descrizione fisica | 1 online resource (465 p.) |
| Disciplina |
537.622
621.3815/2 621.38152 |
| Altri autori (Persone) |
CapperPeter
MaukMichael |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Electronics - Materials
Optical materials Optoelectronic devices - Materials Semiconductors Liquid phase epitaxy Crystal growth |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-03220-4
9786611032203 0-470-31950-X 0-470-31949-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials; Contents; Series Preface; Preface; Acknowledgements; List of Contributors; 1 Introduction to Liquid Phase Epitaxy; 1.1 General aspects of liquid phase epitaxy; 1.2 Epitaxial growth modes, growth mechanisms and layer thicknesses; 1.3 The substrate problem; 1.4 Conclusions; Acknowledgements; References; 2 Liquid Phase Epitaxy in Russia Prior to 1990; 2.1 Introduction; 2.2 Specific features of growth of quantum-well heterostructures by LPE; 2.2.1 LPE growth from a capillary; 2.2.2 Low-temperature LPE
2.2.3 LPE growth of InGaAsP quantum well heterostructures2.3 Rare-earth elements in LPE technology of some III-V binary compounds and solid solutions; 2.4 Conclusions; Acknowledgements; References; 3 Phase Diagrams and Modeling in Liquid Phase Epitaxy; 3.1 Introduction; 3.2 Equilibrium phase diagrams; 3.2.1 Binary, ternary and quaternary phase diagrams; 3.2.2 Calculation of binary, ternary and quaternary phase diagrams; 3.2.3 Calculation of phase diagrams considering the surface, interface and strain energies; 3.2.4 Experimental determination of phase diagrams; 3.2.5 Miscibility gap 3.3 Technologies of LPE growth3.4 III-V materials for LPE growth; 3.5 Lattice matching; 3.6 Growth of misfit-dislocation-free wafers; 3.7 Phase diagrams of growth mode; 3.8 Growth kinetics; 3.8.1 Calculation of III-V layer thickness; 3.8.2 Compositional variation in III-V ternary layers; 3.9 Summary; References; Appendix; 4 Equipment and Instrumentation for Liquid Phase Epitaxy; 4.1 Introduction; 4.2 Overview, general description and operation of horizontal slideboat LPE system; 4.3 Crucibles and slideboats; 4.4 Alternative slideboat designs; 4.5 Furnaces and heating; 4.6 LPE ambient 4.7 Tubes, sealing and gas handling4.8 Controllers and heating; 4.9 Temperature measurements and other instrumentation; 4.10 Safety; 4.11 Production LPE systems; References; 5 Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy; 5.1 Introduction and scope of review; 5.2 Historical perspective; 5.3 Basis of silicon and germanium LPE; 5.3.1 Nucleation of silicon from a molten metal solution; 5.4 Silicon LPE methods; 5.4.1 Steady-state methods of solution growth and LPE; 5.5 Solvent selection; 5.6 Low-temperature silicon LPE 5.7 Purification of silicon for solar cells in an LPE process5.8 Electrical properties of LPE-grown silicon; 5.9 LPE of Si- and Ge-based alloys; 5.10 Selective LPE and liquid phase ELO; 5.11 Solar cells; 5.11.1 Epitaxial silicon solar cells by LPE; 5.11.2 Si solution growth on nonsilicon substrates for solar cells; 5.12 Other applications of silicon and germanium LPE; 5.13 Conclusions and outlook; References; Appendix 1. Phase equilibria modeling: The silicon-metal liquidus; A1.1 The silicon-metal binary liquidus; A1.2 Alloy solvents; Appendix 2. Impurities and doping in silicon LPE Appendix 3. Effects of oxygen and water vapor in Si LPE |
| Record Nr. | UNINA-9910144593503321 |
| Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Liquid phase epitaxy of electronic, optical, and optoelectronic materials [[electronic resource] /] / edited by Peter Capper, Michael Mauk
| Liquid phase epitaxy of electronic, optical, and optoelectronic materials [[electronic resource] /] / edited by Peter Capper, Michael Mauk |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 |
| Descrizione fisica | 1 online resource (465 p.) |
| Disciplina |
537.622
621.3815/2 621.38152 |
| Altri autori (Persone) |
CapperPeter
MaukMichael |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Electronics - Materials
Optical materials Optoelectronic devices - Materials Semiconductors Liquid phase epitaxy Crystal growth |
| ISBN |
1-281-03220-4
9786611032203 0-470-31950-X 0-470-31949-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials; Contents; Series Preface; Preface; Acknowledgements; List of Contributors; 1 Introduction to Liquid Phase Epitaxy; 1.1 General aspects of liquid phase epitaxy; 1.2 Epitaxial growth modes, growth mechanisms and layer thicknesses; 1.3 The substrate problem; 1.4 Conclusions; Acknowledgements; References; 2 Liquid Phase Epitaxy in Russia Prior to 1990; 2.1 Introduction; 2.2 Specific features of growth of quantum-well heterostructures by LPE; 2.2.1 LPE growth from a capillary; 2.2.2 Low-temperature LPE
2.2.3 LPE growth of InGaAsP quantum well heterostructures2.3 Rare-earth elements in LPE technology of some III-V binary compounds and solid solutions; 2.4 Conclusions; Acknowledgements; References; 3 Phase Diagrams and Modeling in Liquid Phase Epitaxy; 3.1 Introduction; 3.2 Equilibrium phase diagrams; 3.2.1 Binary, ternary and quaternary phase diagrams; 3.2.2 Calculation of binary, ternary and quaternary phase diagrams; 3.2.3 Calculation of phase diagrams considering the surface, interface and strain energies; 3.2.4 Experimental determination of phase diagrams; 3.2.5 Miscibility gap 3.3 Technologies of LPE growth3.4 III-V materials for LPE growth; 3.5 Lattice matching; 3.6 Growth of misfit-dislocation-free wafers; 3.7 Phase diagrams of growth mode; 3.8 Growth kinetics; 3.8.1 Calculation of III-V layer thickness; 3.8.2 Compositional variation in III-V ternary layers; 3.9 Summary; References; Appendix; 4 Equipment and Instrumentation for Liquid Phase Epitaxy; 4.1 Introduction; 4.2 Overview, general description and operation of horizontal slideboat LPE system; 4.3 Crucibles and slideboats; 4.4 Alternative slideboat designs; 4.5 Furnaces and heating; 4.6 LPE ambient 4.7 Tubes, sealing and gas handling4.8 Controllers and heating; 4.9 Temperature measurements and other instrumentation; 4.10 Safety; 4.11 Production LPE systems; References; 5 Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy; 5.1 Introduction and scope of review; 5.2 Historical perspective; 5.3 Basis of silicon and germanium LPE; 5.3.1 Nucleation of silicon from a molten metal solution; 5.4 Silicon LPE methods; 5.4.1 Steady-state methods of solution growth and LPE; 5.5 Solvent selection; 5.6 Low-temperature silicon LPE 5.7 Purification of silicon for solar cells in an LPE process5.8 Electrical properties of LPE-grown silicon; 5.9 LPE of Si- and Ge-based alloys; 5.10 Selective LPE and liquid phase ELO; 5.11 Solar cells; 5.11.1 Epitaxial silicon solar cells by LPE; 5.11.2 Si solution growth on nonsilicon substrates for solar cells; 5.12 Other applications of silicon and germanium LPE; 5.13 Conclusions and outlook; References; Appendix 1. Phase equilibria modeling: The silicon-metal liquidus; A1.1 The silicon-metal binary liquidus; A1.2 Alloy solvents; Appendix 2. Impurities and doping in silicon LPE Appendix 3. Effects of oxygen and water vapor in Si LPE |
| Record Nr. | UNINA-9910830383003321 |
| Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Liquid phase epitaxy of electronic, optical, and optoelectronic materials / / edited by Peter Capper, Michael Mauk
| Liquid phase epitaxy of electronic, optical, and optoelectronic materials / / edited by Peter Capper, Michael Mauk |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 |
| Descrizione fisica | 1 online resource (465 p.) |
| Disciplina | 621.3815/2 |
| Altri autori (Persone) |
CapperPeter
MaukMichael |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Electronics - Materials
Optical materials Optoelectronic devices - Materials Semiconductors Liquid phase epitaxy Crystal growth |
| ISBN |
1-281-03220-4
9786611032203 0-470-31950-X 0-470-31949-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials; Contents; Series Preface; Preface; Acknowledgements; List of Contributors; 1 Introduction to Liquid Phase Epitaxy; 1.1 General aspects of liquid phase epitaxy; 1.2 Epitaxial growth modes, growth mechanisms and layer thicknesses; 1.3 The substrate problem; 1.4 Conclusions; Acknowledgements; References; 2 Liquid Phase Epitaxy in Russia Prior to 1990; 2.1 Introduction; 2.2 Specific features of growth of quantum-well heterostructures by LPE; 2.2.1 LPE growth from a capillary; 2.2.2 Low-temperature LPE
2.2.3 LPE growth of InGaAsP quantum well heterostructures2.3 Rare-earth elements in LPE technology of some III-V binary compounds and solid solutions; 2.4 Conclusions; Acknowledgements; References; 3 Phase Diagrams and Modeling in Liquid Phase Epitaxy; 3.1 Introduction; 3.2 Equilibrium phase diagrams; 3.2.1 Binary, ternary and quaternary phase diagrams; 3.2.2 Calculation of binary, ternary and quaternary phase diagrams; 3.2.3 Calculation of phase diagrams considering the surface, interface and strain energies; 3.2.4 Experimental determination of phase diagrams; 3.2.5 Miscibility gap 3.3 Technologies of LPE growth3.4 III-V materials for LPE growth; 3.5 Lattice matching; 3.6 Growth of misfit-dislocation-free wafers; 3.7 Phase diagrams of growth mode; 3.8 Growth kinetics; 3.8.1 Calculation of III-V layer thickness; 3.8.2 Compositional variation in III-V ternary layers; 3.9 Summary; References; Appendix; 4 Equipment and Instrumentation for Liquid Phase Epitaxy; 4.1 Introduction; 4.2 Overview, general description and operation of horizontal slideboat LPE system; 4.3 Crucibles and slideboats; 4.4 Alternative slideboat designs; 4.5 Furnaces and heating; 4.6 LPE ambient 4.7 Tubes, sealing and gas handling4.8 Controllers and heating; 4.9 Temperature measurements and other instrumentation; 4.10 Safety; 4.11 Production LPE systems; References; 5 Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy; 5.1 Introduction and scope of review; 5.2 Historical perspective; 5.3 Basis of silicon and germanium LPE; 5.3.1 Nucleation of silicon from a molten metal solution; 5.4 Silicon LPE methods; 5.4.1 Steady-state methods of solution growth and LPE; 5.5 Solvent selection; 5.6 Low-temperature silicon LPE 5.7 Purification of silicon for solar cells in an LPE process5.8 Electrical properties of LPE-grown silicon; 5.9 LPE of Si- and Ge-based alloys; 5.10 Selective LPE and liquid phase ELO; 5.11 Solar cells; 5.11.1 Epitaxial silicon solar cells by LPE; 5.11.2 Si solution growth on nonsilicon substrates for solar cells; 5.12 Other applications of silicon and germanium LPE; 5.13 Conclusions and outlook; References; Appendix 1. Phase equilibria modeling: The silicon-metal liquidus; A1.1 The silicon-metal binary liquidus; A1.2 Alloy solvents; Appendix 2. Impurities and doping in silicon LPE Appendix 3. Effects of oxygen and water vapor in Si LPE |
| Record Nr. | UNINA-9910876906603321 |
| Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Molecular beam epitaxy [[electronic resource] ] : from research to mass production / / edited by Mohamed Henini
| Molecular beam epitaxy [[electronic resource] ] : from research to mass production / / edited by Mohamed Henini |
| Pubbl/distr/stampa | Amsterdam, : Elsevier, c2012 |
| Descrizione fisica | 1 online resource (745 p.) |
| Disciplina |
621.3815
621.38152 |
| Altri autori (Persone) | HeniniMohamed |
| Soggetto topico |
Molecular beam epitaxy
Optoelectronic devices - Materials Semiconductors - Materials |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-283-73426-5
0-12-391859-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Molecular Beam Epitaxy: From research to mass production; Copyright; Contents; Preface; Contributors; Chapter 1 - Molecular beam epitaxy: fundamentals, historical background and future prospects; 1.1 INTRODUCTION; 1.2 BASICS OF MBE; 1.3 THE TECHNOLOGY OF MBE; 1.4 DIAGNOSTIC TECHNIQUES AVAILABLE IN MBE SYSTEMS; 1.5 THE PHYSICS OF MBE; 1.6 HISTORICAL BACKGROUND; 1.7 FUTURE PROSPECTS; 1.8 CONCLUSIONS; REFERENCES; Chapter 2 - Molecular beam epitaxy in the ultra-vacuum of space: present and near future; 2.1 INTRODUCTION; 2.2 WAKE SHIELD FACILITY; 2.3 SHIELD; 2.4 CURRENT STATUS
2.5 CONCLUSIONSREFERENCES; Chapter 3 - Growth of semiconductor nanowires by molecular beam epitaxy; 3.1 INTRODUCTION; 3.2 NANOWIRES GROWN BY MOLECULAR BEAM EPITAXY: AN OVERVIEW; 3.3 GROWTH DYNAMICS: MODELS AND EXPERIMENTAL STUDIES; 3.4 CHARACTERISATION AND STRUCTURAL COMPLEXITY; 3.5 OPTICAL PROPERTIES; 3.6 MBE-GROWN NANOWIRE DEVICES: FROM FUNDAMENTALS TO APPLICATIONS; 3.7 CONCLUSIONS; REFERENCES; Chapter 4 - Droplet epitaxy of nanostructures; 4.1 INTRODUCTION; 4.2 DROPLET EPITAXY; 4.3 DROPLET DEPOSITION; 4.4 NANOSTRUCTURE FORMATION; 4.5 CAPPING AND POST-GROWTH ANNEALING PROCEDURES 4.6 PULSED DROPLET EPITAXYACKNOWLEDGEMENTS; REFERENCES; Chapter 5 - Migration-enhanced epitaxy for low-dimensional structures; 5.1 INTRODUCTION; 5.2 AREA SELECTIVE EPITAXY BY MEE; 5.3 POLAR DIAGRAM OF THE GROWTH RATE OF III-V COMPOUND SEMICONDUCTORS; 5.4 FORMATION OF CRYSTAL FACETS AT THE BOUNDARIES OF MICROSTRUCTURES; 5.5 AREA SELECTIVE GROWTH ON (001) GAAS SUBSTRATE BY MEE USING AS4 AND AS2; 5.6 AREA SELECTIVE GROWTH ON (111)B GAAS SUBSTRATE BY MEE; 5.7 SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; Chapter 6 - MBE growth of high-mobility 2DEG; 6.1 INTRODUCTION; 6.2 HIGH-MOBILITY MBE SYSTEM Chapter 10 - Effect of antimony coverage on InAs/GaAs (001) heteroepitaxy |
| Record Nr. | UNINA-9910462143903321 |
| Amsterdam, : Elsevier, c2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Molecular beam epitaxy [[electronic resource] ] : from research to mass production / / edited by Mohamed Henini
| Molecular beam epitaxy [[electronic resource] ] : from research to mass production / / edited by Mohamed Henini |
| Pubbl/distr/stampa | Amsterdam, : Elsevier, c2012 |
| Descrizione fisica | 1 online resource (745 p.) |
| Disciplina |
621.3815
621.38152 |
| Altri autori (Persone) | HeniniMohamed |
| Soggetto topico |
Molecular beam epitaxy
Optoelectronic devices - Materials Semiconductors - Materials |
| ISBN |
1-283-73426-5
0-12-391859-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Molecular Beam Epitaxy: From research to mass production; Copyright; Contents; Preface; Contributors; Chapter 1 - Molecular beam epitaxy: fundamentals, historical background and future prospects; 1.1 INTRODUCTION; 1.2 BASICS OF MBE; 1.3 THE TECHNOLOGY OF MBE; 1.4 DIAGNOSTIC TECHNIQUES AVAILABLE IN MBE SYSTEMS; 1.5 THE PHYSICS OF MBE; 1.6 HISTORICAL BACKGROUND; 1.7 FUTURE PROSPECTS; 1.8 CONCLUSIONS; REFERENCES; Chapter 2 - Molecular beam epitaxy in the ultra-vacuum of space: present and near future; 2.1 INTRODUCTION; 2.2 WAKE SHIELD FACILITY; 2.3 SHIELD; 2.4 CURRENT STATUS
2.5 CONCLUSIONSREFERENCES; Chapter 3 - Growth of semiconductor nanowires by molecular beam epitaxy; 3.1 INTRODUCTION; 3.2 NANOWIRES GROWN BY MOLECULAR BEAM EPITAXY: AN OVERVIEW; 3.3 GROWTH DYNAMICS: MODELS AND EXPERIMENTAL STUDIES; 3.4 CHARACTERISATION AND STRUCTURAL COMPLEXITY; 3.5 OPTICAL PROPERTIES; 3.6 MBE-GROWN NANOWIRE DEVICES: FROM FUNDAMENTALS TO APPLICATIONS; 3.7 CONCLUSIONS; REFERENCES; Chapter 4 - Droplet epitaxy of nanostructures; 4.1 INTRODUCTION; 4.2 DROPLET EPITAXY; 4.3 DROPLET DEPOSITION; 4.4 NANOSTRUCTURE FORMATION; 4.5 CAPPING AND POST-GROWTH ANNEALING PROCEDURES 4.6 PULSED DROPLET EPITAXYACKNOWLEDGEMENTS; REFERENCES; Chapter 5 - Migration-enhanced epitaxy for low-dimensional structures; 5.1 INTRODUCTION; 5.2 AREA SELECTIVE EPITAXY BY MEE; 5.3 POLAR DIAGRAM OF THE GROWTH RATE OF III-V COMPOUND SEMICONDUCTORS; 5.4 FORMATION OF CRYSTAL FACETS AT THE BOUNDARIES OF MICROSTRUCTURES; 5.5 AREA SELECTIVE GROWTH ON (001) GAAS SUBSTRATE BY MEE USING AS4 AND AS2; 5.6 AREA SELECTIVE GROWTH ON (111)B GAAS SUBSTRATE BY MEE; 5.7 SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; Chapter 6 - MBE growth of high-mobility 2DEG; 6.1 INTRODUCTION; 6.2 HIGH-MOBILITY MBE SYSTEM Chapter 10 - Effect of antimony coverage on InAs/GaAs (001) heteroepitaxy |
| Record Nr. | UNINA-9910785910603321 |
| Amsterdam, : Elsevier, c2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
