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Development of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors / / Vijay Parameshwaran [and six others]
Development of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors / / Vijay Parameshwaran [and six others]
Autore Parameshwaran Vijay
Pubbl/distr/stampa Adelphi, MD : , : US Army Research Laboratory, , December 2017
Descrizione fisica 1 online resource (vi, 10 pages) : illustrations
Soggetto topico Photoelectrochemistry
Nitrides
Inhomogeneous materials
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910706902403321
Parameshwaran Vijay  
Adelphi, MD : , : US Army Research Laboratory, , December 2017
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Dilute nitride semiconductors [[electronic resource] /] / [edited by] M. Henini
Dilute nitride semiconductors [[electronic resource] /] / [edited by] M. Henini
Autore Henini Mohamed
Edizione [1st ed.]
Pubbl/distr/stampa Amsterdam, : Elsevier, 2005
Descrizione fisica 1 online resource (648 p.)
Disciplina 621.38152
621.3'8152
Soggetto topico Semiconductors
Nitrides
ISBN 1-280-62834-0
9786610628346
0-08-045599-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover; Frontmatter; Half Title Page; Copyright; Title Page; Copyright; Preface; Contents; 1. MBE Growth and Characterization of Long Wavelength Dilute Nitride III-V Alloys; 1.1. INTRODUCTION; 1.3. DILUTE NITRIDE CHARACTERIZATION; 1.4. ENERGY BAND AND CARRIER TRANSPORT PROPERTIES; 1.6. SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; 2. Epitaxial Growth of Dilute Nitrides by Metal-Organic Vapour Phase Epitaxy; 2.1. INTRODUCTION; 2.2. EPITAXIAL GROWTH OF GaInAsN-BASED STRUCTURES; 2.3. LONG WAVELENGTH GaAs-BASED LASER PERFORMANCES; 2.4. CONCLUSION; ACKNOWLEDGEMENTS; REFERENCES
3. The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors3.1. INTRODUCTION TO DILUTE NITRIDE SEMICONDUCTORS; 3.2. THE CHEMICAL BEAM EPITAXIAL/METALORGANIC MOLECULAR BEAM EPITAXIAL (CBE/MOMBE) GROWTH PROCESS; 3.3. CBE OF DILUTE NITRIDE SEMICONDUCTORS; 3.4. FUNDAMENTAL STUDIES OF GaNxAs(1-x) BAND STRUCTURE; 3.5. THE COMPOSITIONS AND PROPERTIES OF DILUTE NITRIDES GROWN BY CBE; 3.6. CBE-GROWN DILUTE NITRIDE DEVICES; 3.7. THE POTENTIAL FOR PRODUCTION CBE OF DILUTE NITRIDES; 3.8. CONCLUSIONS; ACKNOWLEDGEMENTS; REFERENCES
4. MOMBE Growth and Characterization of III-V-N Compounds and Application to InAs Quantum DotsABSTRACT; 4.1. INTRODUCTION; 4.2. MOMBE GROWTH AND CHARACTERIZATION OF GaAsN; 4.3. RELATION OF In AND N INCORPORATIONS IN THE GROWTH OF GaInNAs; 4.4. GROWTH AND CHARACTERIZATION OF GaAsNSe NEW ALLOY; 4.5. APPLICATION OF GaAsN TO InAs QUANTUM DOTS; 4.6. SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; 5. Recent Progress in Dilute Nitride Quantum Dots; 5.1. SELF-ORGANIZED QUANTUM DOTS; 5.2. DILUTE NITRIDE QUANTUM DOTS; 5.3. RECENT EXPERIMENTAL PROGRESS IN GaInNAs QDs; 5.4. OTHER KINDS OF DILUTE NITRIDE QDs
5.5. SUMMARY AND FUTURE CHALLENGES IN DILUTE NITRIDE QDsACKNOWLEDGEMENTS; REFERENCES; 6. Physics of Isoelectronic Dopants in GaAs; 6.1. NITROGEN ISOELECTRONIC IMPURITIES; 6.2. THE FAILURE OF THE VIRTUAL CRYSTAL APPROXIMATION; 6.3. PREVALENT THEORETICAL MODELS ON DILUTE NITRIDES; 6.4. ELECTROREFLECTANCE STUDY OF GaAsN; 6.5. RESONANT RAMAN SCATTERING STUDY OF CONDUCTION BAND STATES; 6.6. COMPATIBILITY WITH OTHER EXPERIMENTAL RESULTS; 6.7. A COMPLEMENTARY ALLOY: GaAsBi; 6.8. SUMMARY; 6.9. CONCLUSION; REFERENCES
7. Measurement of Carrier Localization Degree, Electron Effective Mass, and Exciton Size in InxGa1-xAs1-yNy AlloysABSTRACT; 7.1. INTRODUCTION; 7.2. EXPERIMENTAL; 7.4. MEASUREMENT OF THE ELECTRON EFFECTIVE MASS AND EXCITON WAVE FUNCTION SIZE; 7.5. CONCLUSIONS; ACKNOWLEDGEMENTS; REFERENCES; 8. Probing the "Unusual" Band Structure of Dilute Ga(AsN) Quantum Wells by Magneto-Tunnelling Spectroscopy and Other Techniques; 8.1. INTRODUCTION; 8.2. RESONANT TUNNELLING DIODES BASED ON DILUTE NITRIDES; 8.3. MAGNETO-TUNNELLING SPECTROSCOPY TO PROBE THE CONDUCTION BAND STRUCTURE OF DILUTE NITRIDES
8.4. ELECTRONIC PROPERTIES: FROM THE VERY DILUTE REGIME (~0.1%) TO THE DILUTE REGIME
Record Nr. UNINA-9910784537803321
Henini Mohamed  
Amsterdam, : Elsevier, 2005
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Dilute nitride semiconductors / / [edited by] M. Henini
Dilute nitride semiconductors / / [edited by] M. Henini
Autore Henini Mohamed
Edizione [1st ed.]
Pubbl/distr/stampa Amsterdam, : Elsevier, 2005
Descrizione fisica 1 online resource (648 p.)
Disciplina 621.38152
Soggetto topico Semiconductors
Nitrides
ISBN 1-280-62834-0
9786610628346
0-08-045599-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover; Frontmatter; Half Title Page; Copyright; Title Page; Copyright; Preface; Contents; 1. MBE Growth and Characterization of Long Wavelength Dilute Nitride III-V Alloys; 1.1. INTRODUCTION; 1.3. DILUTE NITRIDE CHARACTERIZATION; 1.4. ENERGY BAND AND CARRIER TRANSPORT PROPERTIES; 1.6. SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; 2. Epitaxial Growth of Dilute Nitrides by Metal-Organic Vapour Phase Epitaxy; 2.1. INTRODUCTION; 2.2. EPITAXIAL GROWTH OF GaInAsN-BASED STRUCTURES; 2.3. LONG WAVELENGTH GaAs-BASED LASER PERFORMANCES; 2.4. CONCLUSION; ACKNOWLEDGEMENTS; REFERENCES
3. The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors3.1. INTRODUCTION TO DILUTE NITRIDE SEMICONDUCTORS; 3.2. THE CHEMICAL BEAM EPITAXIAL/METALORGANIC MOLECULAR BEAM EPITAXIAL (CBE/MOMBE) GROWTH PROCESS; 3.3. CBE OF DILUTE NITRIDE SEMICONDUCTORS; 3.4. FUNDAMENTAL STUDIES OF GaNxAs(1-x) BAND STRUCTURE; 3.5. THE COMPOSITIONS AND PROPERTIES OF DILUTE NITRIDES GROWN BY CBE; 3.6. CBE-GROWN DILUTE NITRIDE DEVICES; 3.7. THE POTENTIAL FOR PRODUCTION CBE OF DILUTE NITRIDES; 3.8. CONCLUSIONS; ACKNOWLEDGEMENTS; REFERENCES
4. MOMBE Growth and Characterization of III-V-N Compounds and Application to InAs Quantum DotsABSTRACT; 4.1. INTRODUCTION; 4.2. MOMBE GROWTH AND CHARACTERIZATION OF GaAsN; 4.3. RELATION OF In AND N INCORPORATIONS IN THE GROWTH OF GaInNAs; 4.4. GROWTH AND CHARACTERIZATION OF GaAsNSe NEW ALLOY; 4.5. APPLICATION OF GaAsN TO InAs QUANTUM DOTS; 4.6. SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; 5. Recent Progress in Dilute Nitride Quantum Dots; 5.1. SELF-ORGANIZED QUANTUM DOTS; 5.2. DILUTE NITRIDE QUANTUM DOTS; 5.3. RECENT EXPERIMENTAL PROGRESS IN GaInNAs QDs; 5.4. OTHER KINDS OF DILUTE NITRIDE QDs
5.5. SUMMARY AND FUTURE CHALLENGES IN DILUTE NITRIDE QDsACKNOWLEDGEMENTS; REFERENCES; 6. Physics of Isoelectronic Dopants in GaAs; 6.1. NITROGEN ISOELECTRONIC IMPURITIES; 6.2. THE FAILURE OF THE VIRTUAL CRYSTAL APPROXIMATION; 6.3. PREVALENT THEORETICAL MODELS ON DILUTE NITRIDES; 6.4. ELECTROREFLECTANCE STUDY OF GaAsN; 6.5. RESONANT RAMAN SCATTERING STUDY OF CONDUCTION BAND STATES; 6.6. COMPATIBILITY WITH OTHER EXPERIMENTAL RESULTS; 6.7. A COMPLEMENTARY ALLOY: GaAsBi; 6.8. SUMMARY; 6.9. CONCLUSION; REFERENCES
7. Measurement of Carrier Localization Degree, Electron Effective Mass, and Exciton Size in InxGa1-xAs1-yNy AlloysABSTRACT; 7.1. INTRODUCTION; 7.2. EXPERIMENTAL; 7.4. MEASUREMENT OF THE ELECTRON EFFECTIVE MASS AND EXCITON WAVE FUNCTION SIZE; 7.5. CONCLUSIONS; ACKNOWLEDGEMENTS; REFERENCES; 8. Probing the "Unusual" Band Structure of Dilute Ga(AsN) Quantum Wells by Magneto-Tunnelling Spectroscopy and Other Techniques; 8.1. INTRODUCTION; 8.2. RESONANT TUNNELLING DIODES BASED ON DILUTE NITRIDES; 8.3. MAGNETO-TUNNELLING SPECTROSCOPY TO PROBE THE CONDUCTION BAND STRUCTURE OF DILUTE NITRIDES
8.4. ELECTRONIC PROPERTIES: FROM THE VERY DILUTE REGIME (~0.1%) TO THE DILUTE REGIME
Record Nr. UNINA-9910828094803321
Henini Mohamed  
Amsterdam, : Elsevier, 2005
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Epitaxial Growth of Nitrides on Germanium / / Ruben Lieten ; field director Stefan Degroote ; thesis advisor Gustaaf Borghs, Maarten Kuijk
Epitaxial Growth of Nitrides on Germanium / / Ruben Lieten ; field director Stefan Degroote ; thesis advisor Gustaaf Borghs, Maarten Kuijk
Autore Lieten Ruben
Pubbl/distr/stampa Brussels, Belgium : , : VUBPress, , 2008
Descrizione fisica 1 online resource (174 p.)
Disciplina 546.684
Altri autori (Persone) DegrooteStefan
BorghsGustaaf
KuijkMaarten
Collana Vrije Universiteit Brussel
Soggetto topico Germanium
Nitrides
Soggetto genere / forma Electronic books.
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto ""Front ""; ""Table of contents""; ""Acronyms""; ""Chapter 1 Introduction""; ""Chapter 2 Growth of GaN on Ge(111)""; ""Chapter 3 Growth of InN on Ge(111) using a GaN buffer""; ""Chapter 4 Formation of crystalline Ge3N4 on Ge(111)""; ""Chapter 5 Ohmic contact formation on ntype Ge""; ""Chapter 6 Crystallization of amorphous Ge on Si""; ""Chapter 7 Conclusions and outlook""; ""Appendix A Report on direct photo electrolysis""; ""Appendix B Characterization techniques""; ""List of publications""
Record Nr. UNINA-9910464940803321
Lieten Ruben  
Brussels, Belgium : , : VUBPress, , 2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Epitaxial Growth of Nitrides on Germanium / / Ruben Lieten ; field director Stefan Degroote ; thesis advisor Gustaaf Borghs, Maarten Kuijk
Epitaxial Growth of Nitrides on Germanium / / Ruben Lieten ; field director Stefan Degroote ; thesis advisor Gustaaf Borghs, Maarten Kuijk
Autore Lieten Ruben
Pubbl/distr/stampa Brussels, Belgium : , : VUBPress, , 2008
Descrizione fisica 1 online resource (174 p.)
Disciplina 546.684
Altri autori (Persone) DegrooteStefan
BorghsGustaaf
KuijkMaarten
Collana Vrije Universiteit Brussel
Soggetto topico Germanium
Nitrides
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto ""Front ""; ""Table of contents""; ""Acronyms""; ""Chapter 1 Introduction""; ""Chapter 2 Growth of GaN on Ge(111)""; ""Chapter 3 Growth of InN on Ge(111) using a GaN buffer""; ""Chapter 4 Formation of crystalline Ge3N4 on Ge(111)""; ""Chapter 5 Ohmic contact formation on ntype Ge""; ""Chapter 6 Crystallization of amorphous Ge on Si""; ""Chapter 7 Conclusions and outlook""; ""Appendix A Report on direct photo electrolysis""; ""Appendix B Characterization techniques""; ""List of publications""
Record Nr. UNINA-9910789184203321
Lieten Ruben  
Brussels, Belgium : , : VUBPress, , 2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Epitaxial Growth of Nitrides on Germanium / / Ruben Lieten ; field director Stefan Degroote ; thesis advisor Gustaaf Borghs, Maarten Kuijk
Epitaxial Growth of Nitrides on Germanium / / Ruben Lieten ; field director Stefan Degroote ; thesis advisor Gustaaf Borghs, Maarten Kuijk
Autore Lieten Ruben
Pubbl/distr/stampa Brussels, Belgium : , : VUBPress, , 2008
Descrizione fisica 1 online resource (174 p.)
Disciplina 546.684
Altri autori (Persone) DegrooteStefan
BorghsGustaaf
KuijkMaarten
Collana Vrije Universiteit Brussel
Soggetto topico Germanium
Nitrides
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto ""Front ""; ""Table of contents""; ""Acronyms""; ""Chapter 1 Introduction""; ""Chapter 2 Growth of GaN on Ge(111)""; ""Chapter 3 Growth of InN on Ge(111) using a GaN buffer""; ""Chapter 4 Formation of crystalline Ge3N4 on Ge(111)""; ""Chapter 5 Ohmic contact formation on ntype Ge""; ""Chapter 6 Crystallization of amorphous Ge on Si""; ""Chapter 7 Conclusions and outlook""; ""Appendix A Report on direct photo electrolysis""; ""Appendix B Characterization techniques""; ""List of publications""
Record Nr. UNINA-9910813155103321
Lieten Ruben  
Brussels, Belgium : , : VUBPress, , 2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Handbook of nitride semiconductors and devices . Vol. 3 GaN-based optical and electronic devices / / Hadis Morkoc
Handbook of nitride semiconductors and devices . Vol. 3 GaN-based optical and electronic devices / / Hadis Morkoc
Autore Morkoc Hadis
Pubbl/distr/stampa Weinheim, : Wiley-VCH
Descrizione fisica 1 online resource (905 p.)
Disciplina 621.38152
Altri autori (Persone) MorkocHadis
Collana Handbook of Nitride Semiconductors and Devices (VCH)
Soggetto topico Semiconductors - Materials
Nitrides
ISBN 1-282-27933-5
9786612279331
3-527-62844-4
3-527-62845-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Handbook of Nitride Semiconductors and Devices; Contents; Preface; Color Tables; 1 Light-Emitting Diodes and Lighting; Introduction; 1.1 Current-Conduction Mechanism in LED-Like Structures; 1.2 Optical Output Power; 1.3 Losses and Efficiency; 1.4 Current Crowding; 1.5 Packaging; 1.6 Perception of Visible Light and Color; 1.7 Visible-Light Terminology; 1.7.1 Luminous Efficacy; 1.7.2 Chromaticity Coordinates and Color Temperature; 1.8 Inroads by LEDs; 1.9 Nitride LED Performance; 1.9.1 LEDs on Sapphire Substrates; 1.9.1.1 Blue and Green LEDs; 1.9.1.2 Amber LEDs; 1.9.1.3 UV LEDs
1.9.1.4 Resonant Cavity-Enhanced LED1.9.1.5 Effect of Threading Dislocation on LEDs; 1.9.2 LEDs on SiC Substrates; 1.9.3 LEDs on Si Substrates; 1.9.4 LEDs Utilizing Rare Earth Transitions; 1.10 On the Nature of Light Emission in Nitride-Based LEDs; 1.10.1 Pressure Dependence of Spectra; 1.10.2 Current and Temperature Dependence of Spectra; 1.11 LED Degradation; 1.12 LED Efficiency; 1.13 Monochrome Applications of LEDs; 1.14 Luminescence Conversion and White-Light Generation with Nitride LEDs; 1.14.1 Color as Related to White-Light LEDs; 1.14.2 Color Rendering Index
1.15 Approaches to White-Light Generation1.15.1 White Light from Three-Chip LEDs; 1.15.2 White Light from Four-Chip LEDs; 1.15.3 Combining LEDs and Phosphor(s); 1.15.4 Other Photon Conversion Schemes; 1.16 Toward the White-Light Applications; 1.17 Organic/Polymeric LEDs (OLED, PLED); 1.17.1 OLED Structures; 1.17.2 Charge and Energy Transport Fundamentals; 1.17.3 Properties of Organic Crystals; 1.17.4 Light Emission Dynamics; 1.17.4.1 Nonradiative Recombination; 1.17.4.2 Internal Conversion; 1.17.4.3 Intersystem Crossing; 1.17.4.4 Singlet Fission; 1.17.4.5 Aggregation and Davydov Splitting
1.17.4.6 Charge-Transfer Excitons1.17.5 OLED Devices; 1.17.5.1 White OLEDs; 1.17.5.2 Displays; 1.17.6 Lighting with OLEDs; References; 2 Semiconductor Lasers; Introduction; 2.1 A Primer to the Principles of Lasers; 2.2 Waveguiding; 2.2.1 Refractive Index of GaN and AlGaN; 2.2.2 Refractive Index of InGaN; 2.2.3 Analytical Solution to the Waveguide Problem; 2.2.4 Numerical Solution of the Waveguide Problem; 2.2.5 Far-Field Pattern; 2.3 Loss, Threshold, and Cavity Modes; 2.4 Optical Gain; 2.4.1 A Glossary for Semiconductor Lasers; 2.4.2 Optical Gain in Bulk Layers: A Semiconductor Approach
2.4.2.1 Relating Absorption Rate to Absorption Coefficient2.4.2.2 Relating Stimulated Emission Rate to Absorption Coefficient; 2.4.2.3 Relating Spontaneous Emission Rate to Absorption Coefficient; 2.4.2.4 Fermi's Golden Rule, Stimulated and Spontaneous Emission Rates, and Absorption Coefficient Within the k-Selection Rule; 2.4.3 Gain in Quantum Wells; 2.5 Coulombic Effects; 2.6 Numerical Gain Calculations for GaN; 2.6.1 Optical Gain in Bulk GaN; 2.6.2 Gain in GaN Quantum Wells; 2.6.3 Gain Calculations in Wz GaN Q Wells Without Strain; 2.6.4 Gain Calculations in Wz Q Wells with Strain
2.6.5 Gain in ZB Q Wells Without Strain
Record Nr. UNINA-9910877823803321
Morkoc Hadis  
Weinheim, : Wiley-VCH
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Handbook of nitride semiconductors and devices . Vol. 1 Materials properties, physics and growth / / Hadis Morkoc
Handbook of nitride semiconductors and devices . Vol. 1 Materials properties, physics and growth / / Hadis Morkoc
Autore Morkoc Hadis
Pubbl/distr/stampa Weinheim, : Wiley-VCH, 2008
Descrizione fisica 1 online resource (1323 p.)
Disciplina 621.38152
Altri autori (Persone) MorkocHadis
Collana Handbook of Nitride Semiconductors and Devices (VCH)
Soggetto topico Semiconductors - Materials
Nitrides
ISBN 1-282-27935-1
9786612279355
3-527-62843-6
3-527-62846-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Handbook of Nitride Semiconductors and Devices; Contents; Preface; Color Tables; 1 General Properties of Nitrides; Introduction; 1.1 Crystal Structure of Nitrides; 1.2 Gallium Nitride; 1.2.1 Chemical Properties of GaN; 1.2.2 Mechanical Properties of GaN; 1.2.3 Thermal Properties of GaN; 1.3 Aluminum Nitride; 1.3.1 Mechanical Properties of AlN; 1.3.2 Thermal and Chemical Properties of AlN; 1.3.3 Electrical Properties of AlN; 1.3.4 Brief Optical Properties of AlN; 1.4 Indium Nitride; 1.4.1 Crystal Structure of InN; 1.4.2 Mechanical Properties of InN; 1.4.3 Thermal Properties of InN
1.4.4 Brief Electrical Properties of InN1.4.5 Brief Optical Properties of InN; 1.5 Ternary and Quaternary Alloys; 1.5.1 AlGaN Alloy; 1.5.2 InGaN Alloy; 1.5.3 InAlN Alloy; 1.5.4 InAlGaN Quaternary Alloy; 1.5.5 Dilute GaAs(N); References; 2 Electronic Band Structure and Polarization Effects; Introduction; 2.1 Band Structure Calculations; 2.1.1 Plane Wave Expansion Method; 2.1.2 Orthogonalized Plane Wave (OPW) Method; 2.1.3 Pseudopotential Method; 2.1.4 Augmented Plane Wave (APW) Method; 2.1.5 Other Methods and a Review Pertinent to GaN; 2.2 General Strain Considerations
2.3 Effect of Strain on the Band Structure of GaN2.4 k·p Theory and the Quasi-Cubic Model; 2.5 Quasi-Cubic Approximation; 2.6 Temperature Dependence of Wurtzite GaN Bandgap; 2.7 Sphalerite (Zinc blende) GaN; 2.8 AlN; 2.8.1 Wurtzite AlN; 2.8.2 Zinc Blende AlN; 2.9 InN; 2.9.1 Wurtzitic InN; 2.9.2 Zinc Blende InN; 2.10 Band Parameters for Dilute Nitrides; 2.10.1 GaAsN; 2.10.2 InAsN; 2.10.3 InPN; 2.10.4 InSbN; 2.10.5 GaPN; 2.10.6 GaInAsN; 2.10.7 GaInPN; 2.10.8 GaAsSbN; 2.11 Confined States; 2.11.1 Conduction Band; 2.11.2 Valence Band; 2.11.3 Exciton Binding Energy in Quantum Wells
2.12 Polarization Effects2.12.1 Piezoelectric Polarization; 2.12.2 Spontaneous Polarization; 2.12.3 Nonlinearity of Polarization; 2.12.3.1 Origin of the Nonlinearity; 2.12.3.2 Nonlinearities in Spontaneous Polarization; 2.12.3.3 Nonlinearities in Piezoelectric Polarization; 2.12.4 Polarization in Heterostructures; 2.12.4.1 Ga-Polarity Single AlGaN/GaN Interface; 2.12.4.2 Ga-Polarity Single Al(x)In(1-x)N/GaN Interface; 2.12.5 Polarization in Quantum Wells; 2.12.5.1 Nonlinear Polarization in Quantum Wells; 2.12.5.2 InGaN/GaN Quantum Wells
2.12.6 Effect of Dislocations on Piezoelectric Polarization2.12.7 Thermal Mismatch Induced Strain; References; 3 Growth and Growth Methods for Nitride Semiconductors; Introduction; 3.1 Substrates for Nitride Epitaxy; 3.1.1 Conventional Substrates; 3.1.2 Compliant Substrates; 3.1.3 van der Waals Substrates; 3.2 A Primer on Conventional Substrates and their Preparation for Growth; 3.2.1 GaAs; 3.2.1.1 A Primer on GaAs; 3.2.1.2 Surface Preparation of GaAs for Epitaxy; 3.2.2 Si; 3.2.2.1 A Primer on Si; 3.2.2.2 Surface Preparation of Si for Epitaxy; 3.2.3 SiC; 3.2.3.1 A Primer on SiC
3.2.3.2 Surface Preparation of SiC for Epitaxy
Record Nr. UNINA-9910877380403321
Morkoc Hadis  
Weinheim, : Wiley-VCH, 2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Handbook of nitride semiconductors and devices . Vol. 1 Materials properties, physics and growth [[electronic resource] /] / Hadis Morkoc ʹ
Handbook of nitride semiconductors and devices . Vol. 1 Materials properties, physics and growth [[electronic resource] /] / Hadis Morkoc ʹ
Autore Morkoc ʹ Hadis
Pubbl/distr/stampa Weinheim, : Wiley-VCH, 2008
Descrizione fisica 1 online resource (1323 p.)
Disciplina 621.38152
Altri autori (Persone) Morkoc ʹHadis
Collana Handbook of Nitride Semiconductors and Devices (VCH)
Soggetto topico Semiconductors - Materials
Nitrides
ISBN 1-282-27935-1
9786612279355
3-527-62843-6
3-527-62846-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Handbook of Nitride Semiconductors and Devices; Contents; Preface; Color Tables; 1 General Properties of Nitrides; Introduction; 1.1 Crystal Structure of Nitrides; 1.2 Gallium Nitride; 1.2.1 Chemical Properties of GaN; 1.2.2 Mechanical Properties of GaN; 1.2.3 Thermal Properties of GaN; 1.3 Aluminum Nitride; 1.3.1 Mechanical Properties of AlN; 1.3.2 Thermal and Chemical Properties of AlN; 1.3.3 Electrical Properties of AlN; 1.3.4 Brief Optical Properties of AlN; 1.4 Indium Nitride; 1.4.1 Crystal Structure of InN; 1.4.2 Mechanical Properties of InN; 1.4.3 Thermal Properties of InN
1.4.4 Brief Electrical Properties of InN1.4.5 Brief Optical Properties of InN; 1.5 Ternary and Quaternary Alloys; 1.5.1 AlGaN Alloy; 1.5.2 InGaN Alloy; 1.5.3 InAlN Alloy; 1.5.4 InAlGaN Quaternary Alloy; 1.5.5 Dilute GaAs(N); References; 2 Electronic Band Structure and Polarization Effects; Introduction; 2.1 Band Structure Calculations; 2.1.1 Plane Wave Expansion Method; 2.1.2 Orthogonalized Plane Wave (OPW) Method; 2.1.3 Pseudopotential Method; 2.1.4 Augmented Plane Wave (APW) Method; 2.1.5 Other Methods and a Review Pertinent to GaN; 2.2 General Strain Considerations
2.3 Effect of Strain on the Band Structure of GaN2.4 k·p Theory and the Quasi-Cubic Model; 2.5 Quasi-Cubic Approximation; 2.6 Temperature Dependence of Wurtzite GaN Bandgap; 2.7 Sphalerite (Zinc blende) GaN; 2.8 AlN; 2.8.1 Wurtzite AlN; 2.8.2 Zinc Blende AlN; 2.9 InN; 2.9.1 Wurtzitic InN; 2.9.2 Zinc Blende InN; 2.10 Band Parameters for Dilute Nitrides; 2.10.1 GaAsN; 2.10.2 InAsN; 2.10.3 InPN; 2.10.4 InSbN; 2.10.5 GaPN; 2.10.6 GaInAsN; 2.10.7 GaInPN; 2.10.8 GaAsSbN; 2.11 Confined States; 2.11.1 Conduction Band; 2.11.2 Valence Band; 2.11.3 Exciton Binding Energy in Quantum Wells
2.12 Polarization Effects2.12.1 Piezoelectric Polarization; 2.12.2 Spontaneous Polarization; 2.12.3 Nonlinearity of Polarization; 2.12.3.1 Origin of the Nonlinearity; 2.12.3.2 Nonlinearities in Spontaneous Polarization; 2.12.3.3 Nonlinearities in Piezoelectric Polarization; 2.12.4 Polarization in Heterostructures; 2.12.4.1 Ga-Polarity Single AlGaN/GaN Interface; 2.12.4.2 Ga-Polarity Single Al(x)In(1-x)N/GaN Interface; 2.12.5 Polarization in Quantum Wells; 2.12.5.1 Nonlinear Polarization in Quantum Wells; 2.12.5.2 InGaN/GaN Quantum Wells
2.12.6 Effect of Dislocations on Piezoelectric Polarization2.12.7 Thermal Mismatch Induced Strain; References; 3 Growth and Growth Methods for Nitride Semiconductors; Introduction; 3.1 Substrates for Nitride Epitaxy; 3.1.1 Conventional Substrates; 3.1.2 Compliant Substrates; 3.1.3 van der Waals Substrates; 3.2 A Primer on Conventional Substrates and their Preparation for Growth; 3.2.1 GaAs; 3.2.1.1 A Primer on GaAs; 3.2.1.2 Surface Preparation of GaAs for Epitaxy; 3.2.2 Si; 3.2.2.1 A Primer on Si; 3.2.2.2 Surface Preparation of Si for Epitaxy; 3.2.3 SiC; 3.2.3.1 A Primer on SiC
3.2.3.2 Surface Preparation of SiC for Epitaxy
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Morkoc ʹ Hadis  
Weinheim, : Wiley-VCH, 2008
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Handbook of nitride semiconductors and devices . Vol. 2 Electronic and optical processes in nitrides [[electronic resource] /] / Hadis Morkoc ʹ
Handbook of nitride semiconductors and devices . Vol. 2 Electronic and optical processes in nitrides [[electronic resource] /] / Hadis Morkoc ʹ
Autore Morkoc ʹ Hadis
Pubbl/distr/stampa Weinheim, : Wiley-VCH
Descrizione fisica 1 online resource (885 p.)
Disciplina 621.38152
Altri autori (Persone) Morkoc ʹHadis
Collana Handbook of Nitride Semiconductors and Devices (VCH)
Soggetto topico Semiconductors - Materials
Nitrides
ISBN 1-282-27952-1
9786612279522
3-527-62841-X
3-527-62842-8
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Handbook of Nitride Semiconductors and Devices; Contents; Preface; Color Tables; 1 Metal Contacts to GaN and Processing; Introduction; 1.1 A Primer for Semiconductor-Metal Contacts; 1.2 Current Flow in Metal-Semiconductor Junctions; 1.2.1 The Regime Dominated by Thermionic Emission; 1.2.2 Thermionic Field Emission Regime; 1.2.3 Direct Tunneling Regime; 1.2.4 Leakage Current; 1.3 GaN Schottky Barriers for High-Voltage Rectifiers; 1.4 Ohmic Contact Resistance; 1.4.1 Specific Contact Resistivity; 1.4.2 Semiconductor Resistance; 1.5 Determination of the Contact Resistivity
1.6 Ohmic Contacts to GaN1.6.1 Nonalloyed Ohmic Contacts; 1.6.2 Alloyed Ohmic Contacts on n-Type GaN; 1.6.3 Contacts to p-Type GaN and Transparent Conducting Oxides; 1.6.4 Effect of Surface Treatment on Ohmic Contacts; 1.6.5 Case of a Forward-Biased p-n Junction in Conjunction with Nonohmic Contacts to p-GaN; 1.7 Structural Analysis of Ohmic Contacts on GaN; 1.8 Etching Techniques for III Nitrides; 1.8.1 Dry (Plasma) Etching; 1.8.1.1 Electron Cyclotron Resonance Etching; 1.8.1.2 Ion Milling; 1.8.1.3 Reactive Ion Etching; 1.8.1.4 Inductively Coupled Plasma Etching
1.8.1.5 Selective Etching of GaN/AlGaN1.8.1.6 Dry Etching of p-GaN; 1.8.1.7 Dry Etching on Ga- and N-Face of Freestanding GaN Substrate; 1.8.1.8 Magnetron Reactive Ion Etching; 1.8.1.9 Chemically Assisted Ion Beam Etching (CAIBE); 1.8.1.10 RF Plasma Etching of GaN; 1.8.2 Laser Ablation Etching of GaN; 1.8.3 Wet Etching; 1.8.4 Photochemical Etching; 1.9 Implant Isolation; 1.10 Process Damage; References; 2 Determination of Impurity and Carrier Concentrations; Introduction; 2.1 Impurity Binding Energy; 2.2 Conductivity Type: Hot Probe and Hall Measurements; 2.2.1 Measurement of Mobility
2.3 Semiconductor Statistics, Density of States, and Carrier Concentration2.3.1 Degeneracy Factor; 2.3.2 Charge Balance Equation and Carrier Concentration; 2.3.2.1 n-Type Semiconductor; 2.3.2.2 p-Type Semiconductor; 2.3.2.3 Multiple Occupancy of the Valence Bands; 2.4 Capacitance-Voltage Measurements; Appendix 2.A. Fermi Integral; Appendix 2.B. Density of States in 3D, 2D, and 1D Systems; 2.B.1. Three-Dimensional Structure; 2.B.2. Two-Dimensional Structure; 2.B.3. One-Dimensional Structure; References; 3 Carrier Transport; 3.1 Prelude; 3.2 Carrier Scattering
3.2.1 Boltzmann Transport Equation3.2.2 Impurity Scattering; 3.2.2.1 Ionized Impurity Scattering; 3.2.2.2 Neutral Impurity Scattering; 3.2.3 Acoustic Phonon Scattering; 3.2.3.1 Deformation Potential Scattering; 3.2.3.2 Piezoelectric Scattering; 3.2.4 Optical Phonon Scattering; 3.2.4.1 Nonpolar Optical Phonon Scattering; 3.2.4.2 Polar Optical Phonon Scattering; 3.2.5 Short-Range Potential-Induced Scattering; 3.2.5.1 Alloy Potential-Induced Scattering; 3.2.5.2 Potential Barrier Scattering; 3.2.5.3 Potential Well Scattering; 3.2.5.4 Space Charge Scattering; 3.2.5.5 Dipole Scattering
3.2.6 Carrier-Carrier Scattering
Record Nr. UNINA-9910139771403321
Morkoc ʹ Hadis  
Weinheim, : Wiley-VCH
Materiale a stampa
Lo trovi qui: Univ. Federico II
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