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Computational mathematics, nanoelectronics, and astrophysics : cmna 2018, indore, india, november 1-3 / / edited by Shaibal Mukherjee, 3 others
Computational mathematics, nanoelectronics, and astrophysics : cmna 2018, indore, india, november 1-3 / / edited by Shaibal Mukherjee, 3 others
Pubbl/distr/stampa Singapore : , : Springer, , [2021]
Descrizione fisica 1 online resource (202 pages) : illustrations
Disciplina 700
Collana Springer Proceedings in Mathematics and Statistics
Soggetto topico Nanoelectronics - Mathematics
Numerical analysis - Data processing
Astrophysics - Mathematics
Anàlisi numèrica
Processament de dades
Nanoelectrònica
Astrofísica
Matemàtica
Soggetto genere / forma Congressos
Llibres electrònics
ISBN 981-15-9708-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996466547303316
Singapore : , : Springer, , [2021]
Materiale a stampa
Lo trovi qui: Univ. di Salerno
Opac: Controlla la disponibilità qui
Computational mathematics, nanoelectronics, and astrophysics : cmna 2018, indore, india, november 1-3 / / edited by Shaibal Mukherjee, 3 others
Computational mathematics, nanoelectronics, and astrophysics : cmna 2018, indore, india, november 1-3 / / edited by Shaibal Mukherjee, 3 others
Pubbl/distr/stampa Singapore : , : Springer, , [2021]
Descrizione fisica 1 online resource (202 pages) : illustrations
Disciplina 700
Collana Springer Proceedings in Mathematics and Statistics
Soggetto topico Nanoelectronics - Mathematics
Numerical analysis - Data processing
Astrophysics - Mathematics
Anàlisi numèrica
Processament de dades
Nanoelectrònica
Astrofísica
Matemàtica
Soggetto genere / forma Congressos
Llibres electrònics
ISBN 981-15-9708-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910484739203321
Singapore : , : Springer, , [2021]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Nanoelectronic Materials : Fundamentals and Applications / / by Loutfy H. Madkour
Nanoelectronic Materials : Fundamentals and Applications / / by Loutfy H. Madkour
Autore Madkour Loutfy H
Edizione [1st ed. 2019.]
Pubbl/distr/stampa Cham : , : Springer International Publishing : , : Imprint : Springer, , 2019
Descrizione fisica 1 online resource (XLV, 783 p. 669 illus., 543 illus. in color.)
Disciplina 620.115
Collana Advanced Structured Materials
Soggetto topico Nanoelectrònica
Nanotecnologia
Nanotechnology
Optical materials
Electronics - Materials
Engineering—Materials
Optical and Electronic Materials
Materials Engineering
Soggetto genere / forma Llibres electrònics
ISBN 9783030216207
9783030216214 (e-book)
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Introduction to Nanotechnology (Nt) and Nanomaterials (Nms) -- Principles of Computational Simulations Devices and Characterization of Nanoelectronic Materials -- Where are Nanomaterials (Nms) Found -- Benefits of Nanomaterials and Nanowire Geometry -- Why So Much Interest in Nanomaterials (Nms) -- Examples of Nanomaterials With Various Morphologies -- Carbon Nanomaterials and Two—Dimensional Transition Metal Dichalcogenides (2d Tmdcs) -- Nanoelectronics and Role of Surfaces Interfaces -- Classification of Nanostructured Materials -- Processing of Nanomaterials (Nms) -- Techniques for Elaboration of Nanomaterials -- Synthesis Methods for 2d Nanostructured Materials, Nanoparticles (Nps), Nanotubes (Nts) and Nanowires (Nws) -- Chemistry and Physics for Nanostructures Semiconductivity -- Roperties of Nanostructured Materials (Nsms) and Physicochemical Properties of (Nps) -- Applications of Nanomaterials and Nanoparticles -- Environmental Impact of Nanotechnology and Novel Applications of Nano Materials and Nano Devices -- Interfacing Biology Systems with Nanoelectronics -- Future Perspectives -- Conclusions.
Record Nr. UNINA-9910337933503321
Madkour Loutfy H  
Cham : , : Springer International Publishing : , : Imprint : Springer, , 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Stochastic approaches to electron transport in micro- and nanostructures / / Mihail Nedjalkov, Ivan Dimov, Siegfried Selberherr
Stochastic approaches to electron transport in micro- and nanostructures / / Mihail Nedjalkov, Ivan Dimov, Siegfried Selberherr
Autore Nedjalkov Mihail
Pubbl/distr/stampa Cham, Switzerland : , : Birkhäuser, , [2021]
Descrizione fisica 1 online resource (xvi, 214 pages) : illustrations
Disciplina 574.192
Collana Modeling and simulation in science, engineering & technology
Soggetto topico Electron transport - Mathematical models
Microelectronics - Mathematical models
Nanoelectronics - Mathematical models
Charge carrier processes
Transport d'electrons
Microelectrònica
Nanoelectrònica
Models matemàtics
Soggetto genere / forma Llibres electrònics
ISBN 3-030-67917-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Intro -- Preface -- Introduction to the Parts -- Contents -- Part I Aspects of Electron Transport Modeling -- 1 Concepts of Device Modeling -- 1.1 About Microelectronics -- 1.2 The Role of Modeling -- 1.3 Modeling of Semiconductor Devices -- 1.3.1 Basic Modules -- 1.3.2 Transport Models -- 1.3.3 Device Modeling: Aspects -- 2 The Semiconductor Model: Fundamentals -- 2.1 Crystal Lattice Electrons -- 2.1.1 Band Structure -- 2.1.2 Carrier Dynamics -- 2.1.3 Charge Transport -- 2.2 Lattice Imperfections -- 2.2.1 Phonons -- 2.2.2 Phonon Scattering -- 3 Transport Theories in Phase Space -- 3.1 Classical Transport: Boltzmann Equation -- 3.1.1 Phenomenological Derivation -- 3.1.2 Parametrization -- 3.1.3 Classical Distribution Function -- 3.2 Quantum Transport: Wigner Equation -- 3.2.1 Operator Mechanics -- 3.2.2 Quantum Mechanics in Phase Space -- 3.2.3 Derivation of the Wigner Equation -- 3.2.4 Properties of the Wigner Equation -- 3.2.5 Classical Limit of the Wigner Equation -- 4 Monte Carlo Computing -- 4.1 The Monte Carlo Method for Solving Integrals -- 4.2 The Monte Carlo Method for Solving Integral Equations -- 4.3 Monte Carlo Integration and Variance Analysis -- Part II Stochastic Algorithms for Boltzmann Transport -- 5 Homogeneous Transport: Empirical Approach -- 5.1 Single-Particle Algorithm -- 5.1.1 Single-Particle Trajectory -- 5.1.2 Mean Values -- 5.1.3 Concept of Self-Scattering -- 5.1.4 Boundary Conditions -- 5.2 Ensemble Algorithm -- 5.3 Algorithms for Statistical Enhancement -- 6 Homogeneous Transport: Stochastic Approach -- 6.1 Trajectory Integral Algorithm -- 6.2 Backward Algorithm -- 6.3 Iteration Approach -- 6.3.1 Derivation of the Backward Algorithm -- 6.3.2 Derivation of Empirical Algorithms -- 6.3.3 Featured Applications -- 7 Small Signal Analysis -- 7.1 Empirical Approach -- 7.1.1 Stationary Algorithms.
7.1.2 Time Dependent Algorithms -- 7.2 Iteration Approach: Stochastic Model -- 7.3 Iteration Approach: Generalizing the Empirical Algorithms -- 7.3.1 Derivation of Finite Difference Algorithms -- 7.3.2 Derivation of Collinear Perturbation Algorithms -- 8 Inhomogeneous Stationary Transport -- 8.1 Stationary Conditions -- 8.2 Iteration Approach: Forward Stochastic Model -- 8.2.1 Adjoint Equation -- 8.2.2 Boundary Conditions -- 8.3 Iteration Approach: Single-Particle Algorithm and Ergodicity -- 8.3.1 Averaging on Before-Scattering States -- 8.3.2 Averaging in Time: Ergodicity -- 8.3.3 The Choice of Boundary -- 8.4 Iteration Approach: Trajectory Splitting Algorithm -- 8.5 Iteration Approach: Modified Backward Algorithm -- 8.6 A Comparison of Forward and Backward Approaches -- 9 General Transport: Self-Consistent Mixed Problem -- 9.1 Formulation of the Problem -- 9.2 The Adjoint Equation -- 9.3 Initial and Boundary Conditions -- 9.3.1 Initial Condition -- 9.3.2 Boundary Conditions -- 9.3.3 Carrier Number Fluctuations -- 9.4 Stochastic Device Modeling: Features -- 10 Event Biasing -- 10.1 Biasing of Initial and Boundary Conditions -- 10.1.1 Initial Condition -- 10.1.2 Boundary Conditions -- 10.2 Biasing of the Natural Evolution -- 10.2.1 Free Flight -- 10.2.2 Phonon Scattering -- 10.3 Self-Consistent Event Biasing -- Part III Stochastic Algorithms for Quantum Transport -- 11 Wigner Function Modeling -- 12 Evolution in a Quantum Wire -- 12.1 Formulation of the Problem -- 12.2 Generalized Wigner Equation -- 12.3 Equation of Motion of the Diagonal Elements -- 12.4 Closure at First-Off-Diagonal Level -- 12.5 Closure at Second-Off-Diagonal Level -- 12.5.1 Approximation of the fFOD+ Equation -- 12.5.1.1 Contribution from fSOD++, -- 12.5.1.2 Contribution from fSOD+,- -- 12.5.1.3 Correction from fSOD+-, -- 12.5.1.4 Correction from fSOD+,+.
Record Nr. UNINA-9910484446203321
Nedjalkov Mihail  
Cham, Switzerland : , : Birkhäuser, , [2021]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Stochastic approaches to electron transport in micro- and nanostructures / / Mihail Nedjalkov, Ivan Dimov, Siegfried Selberherr
Stochastic approaches to electron transport in micro- and nanostructures / / Mihail Nedjalkov, Ivan Dimov, Siegfried Selberherr
Autore Nedjalkov Mihail
Pubbl/distr/stampa Cham, Switzerland : , : Birkhäuser, , [2021]
Descrizione fisica 1 online resource (xvi, 214 pages) : illustrations
Disciplina 574.192
Collana Modeling and simulation in science, engineering & technology
Soggetto topico Electron transport - Mathematical models
Microelectronics - Mathematical models
Nanoelectronics - Mathematical models
Charge carrier processes
Transport d'electrons
Microelectrònica
Nanoelectrònica
Models matemàtics
Soggetto genere / forma Llibres electrònics
ISBN 3-030-67917-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Intro -- Preface -- Introduction to the Parts -- Contents -- Part I Aspects of Electron Transport Modeling -- 1 Concepts of Device Modeling -- 1.1 About Microelectronics -- 1.2 The Role of Modeling -- 1.3 Modeling of Semiconductor Devices -- 1.3.1 Basic Modules -- 1.3.2 Transport Models -- 1.3.3 Device Modeling: Aspects -- 2 The Semiconductor Model: Fundamentals -- 2.1 Crystal Lattice Electrons -- 2.1.1 Band Structure -- 2.1.2 Carrier Dynamics -- 2.1.3 Charge Transport -- 2.2 Lattice Imperfections -- 2.2.1 Phonons -- 2.2.2 Phonon Scattering -- 3 Transport Theories in Phase Space -- 3.1 Classical Transport: Boltzmann Equation -- 3.1.1 Phenomenological Derivation -- 3.1.2 Parametrization -- 3.1.3 Classical Distribution Function -- 3.2 Quantum Transport: Wigner Equation -- 3.2.1 Operator Mechanics -- 3.2.2 Quantum Mechanics in Phase Space -- 3.2.3 Derivation of the Wigner Equation -- 3.2.4 Properties of the Wigner Equation -- 3.2.5 Classical Limit of the Wigner Equation -- 4 Monte Carlo Computing -- 4.1 The Monte Carlo Method for Solving Integrals -- 4.2 The Monte Carlo Method for Solving Integral Equations -- 4.3 Monte Carlo Integration and Variance Analysis -- Part II Stochastic Algorithms for Boltzmann Transport -- 5 Homogeneous Transport: Empirical Approach -- 5.1 Single-Particle Algorithm -- 5.1.1 Single-Particle Trajectory -- 5.1.2 Mean Values -- 5.1.3 Concept of Self-Scattering -- 5.1.4 Boundary Conditions -- 5.2 Ensemble Algorithm -- 5.3 Algorithms for Statistical Enhancement -- 6 Homogeneous Transport: Stochastic Approach -- 6.1 Trajectory Integral Algorithm -- 6.2 Backward Algorithm -- 6.3 Iteration Approach -- 6.3.1 Derivation of the Backward Algorithm -- 6.3.2 Derivation of Empirical Algorithms -- 6.3.3 Featured Applications -- 7 Small Signal Analysis -- 7.1 Empirical Approach -- 7.1.1 Stationary Algorithms.
7.1.2 Time Dependent Algorithms -- 7.2 Iteration Approach: Stochastic Model -- 7.3 Iteration Approach: Generalizing the Empirical Algorithms -- 7.3.1 Derivation of Finite Difference Algorithms -- 7.3.2 Derivation of Collinear Perturbation Algorithms -- 8 Inhomogeneous Stationary Transport -- 8.1 Stationary Conditions -- 8.2 Iteration Approach: Forward Stochastic Model -- 8.2.1 Adjoint Equation -- 8.2.2 Boundary Conditions -- 8.3 Iteration Approach: Single-Particle Algorithm and Ergodicity -- 8.3.1 Averaging on Before-Scattering States -- 8.3.2 Averaging in Time: Ergodicity -- 8.3.3 The Choice of Boundary -- 8.4 Iteration Approach: Trajectory Splitting Algorithm -- 8.5 Iteration Approach: Modified Backward Algorithm -- 8.6 A Comparison of Forward and Backward Approaches -- 9 General Transport: Self-Consistent Mixed Problem -- 9.1 Formulation of the Problem -- 9.2 The Adjoint Equation -- 9.3 Initial and Boundary Conditions -- 9.3.1 Initial Condition -- 9.3.2 Boundary Conditions -- 9.3.3 Carrier Number Fluctuations -- 9.4 Stochastic Device Modeling: Features -- 10 Event Biasing -- 10.1 Biasing of Initial and Boundary Conditions -- 10.1.1 Initial Condition -- 10.1.2 Boundary Conditions -- 10.2 Biasing of the Natural Evolution -- 10.2.1 Free Flight -- 10.2.2 Phonon Scattering -- 10.3 Self-Consistent Event Biasing -- Part III Stochastic Algorithms for Quantum Transport -- 11 Wigner Function Modeling -- 12 Evolution in a Quantum Wire -- 12.1 Formulation of the Problem -- 12.2 Generalized Wigner Equation -- 12.3 Equation of Motion of the Diagonal Elements -- 12.4 Closure at First-Off-Diagonal Level -- 12.5 Closure at Second-Off-Diagonal Level -- 12.5.1 Approximation of the fFOD+ Equation -- 12.5.1.1 Contribution from fSOD++, -- 12.5.1.2 Contribution from fSOD+,- -- 12.5.1.3 Correction from fSOD+-, -- 12.5.1.4 Correction from fSOD+,+.
Record Nr. UNISA-996466553703316
Nedjalkov Mihail  
Cham, Switzerland : , : Birkhäuser, , [2021]
Materiale a stampa
Lo trovi qui: Univ. di Salerno
Opac: Controlla la disponibilità qui