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Computational mathematics, nanoelectronics, and astrophysics : cmna 2018, indore, india, november 1-3 / / edited by Shaibal Mukherjee, 3 others
| Computational mathematics, nanoelectronics, and astrophysics : cmna 2018, indore, india, november 1-3 / / edited by Shaibal Mukherjee, 3 others |
| Pubbl/distr/stampa | Singapore : , : Springer, , [2021] |
| Descrizione fisica | 1 online resource (202 pages) : illustrations |
| Disciplina | 700 |
| Collana | Springer Proceedings in Mathematics and Statistics |
| Soggetto topico |
Nanoelectronics - Mathematics
Numerical analysis - Data processing Astrophysics - Mathematics Anàlisi numèrica Processament de dades Nanoelectrònica Astrofísica Matemàtica |
| Soggetto genere / forma |
Congressos
Llibres electrònics |
| ISBN | 981-15-9708-1 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996466547303316 |
| Singapore : , : Springer, , [2021] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Computational mathematics, nanoelectronics, and astrophysics : cmna 2018, indore, india, november 1-3 / / edited by Shaibal Mukherjee, 3 others
| Computational mathematics, nanoelectronics, and astrophysics : cmna 2018, indore, india, november 1-3 / / edited by Shaibal Mukherjee, 3 others |
| Pubbl/distr/stampa | Singapore : , : Springer, , [2021] |
| Descrizione fisica | 1 online resource (202 pages) : illustrations |
| Disciplina | 700 |
| Collana | Springer Proceedings in Mathematics and Statistics |
| Soggetto topico |
Nanoelectronics - Mathematics
Numerical analysis - Data processing Astrophysics - Mathematics Anàlisi numèrica Processament de dades Nanoelectrònica Astrofísica Matemàtica |
| Soggetto genere / forma |
Congressos
Llibres electrònics |
| ISBN | 981-15-9708-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910484739203321 |
| Singapore : , : Springer, , [2021] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nanoelectronic Materials : Fundamentals and Applications / / by Loutfy H. Madkour
| Nanoelectronic Materials : Fundamentals and Applications / / by Loutfy H. Madkour |
| Autore | Madkour Loutfy H |
| Edizione | [1st ed. 2019.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2019 |
| Descrizione fisica | 1 online resource (XLV, 783 p. 669 illus., 543 illus. in color.) |
| Disciplina | 620.115 |
| Collana | Advanced Structured Materials |
| Soggetto topico |
Nanoelectrònica
Nanotecnologia Nanotechnology Optical materials Electronic materials Engineering—Materials Optical and Electronic Materials Materials Engineering |
| Soggetto genere / forma | Llibres electrònics |
| ISBN |
9783030216207
9783030216214 (e-book) |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction to Nanotechnology (Nt) and Nanomaterials (Nms) -- Principles of Computational Simulations Devices and Characterization of Nanoelectronic Materials -- Where are Nanomaterials (Nms) Found -- Benefits of Nanomaterials and Nanowire Geometry -- Why So Much Interest in Nanomaterials (Nms) -- Examples of Nanomaterials With Various Morphologies -- Carbon Nanomaterials and Two—Dimensional Transition Metal Dichalcogenides (2d Tmdcs) -- Nanoelectronics and Role of Surfaces Interfaces -- Classification of Nanostructured Materials -- Processing of Nanomaterials (Nms) -- Techniques for Elaboration of Nanomaterials -- Synthesis Methods for 2d Nanostructured Materials, Nanoparticles (Nps), Nanotubes (Nts) and Nanowires (Nws) -- Chemistry and Physics for Nanostructures Semiconductivity -- Roperties of Nanostructured Materials (Nsms) and Physicochemical Properties of (Nps) -- Applications of Nanomaterials and Nanoparticles -- Environmental Impact of Nanotechnology and Novel Applications of Nano Materials and Nano Devices -- Interfacing Biology Systems with Nanoelectronics -- Future Perspectives -- Conclusions. |
| Record Nr. | UNINA-9910337933503321 |
Madkour Loutfy H
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| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Stochastic approaches to electron transport in micro- and nanostructures / / Mihail Nedjalkov, Ivan Dimov, Siegfried Selberherr
| Stochastic approaches to electron transport in micro- and nanostructures / / Mihail Nedjalkov, Ivan Dimov, Siegfried Selberherr |
| Autore | Nedjalkov Mihail |
| Pubbl/distr/stampa | Cham, Switzerland : , : Birkhäuser, , [2021] |
| Descrizione fisica | 1 online resource (xvi, 214 pages) : illustrations |
| Disciplina | 574.192 |
| Collana | Modeling and simulation in science, engineering & technology |
| Soggetto topico |
Electron transport - Mathematical models
Microelectronics - Mathematical models Nanoelectronics - Mathematical models Charge carrier processes Transport d'electrons Microelectrònica Nanoelectrònica Models matemàtics |
| Soggetto genere / forma | Llibres electrònics |
| ISBN | 3-030-67917-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Preface -- Introduction to the Parts -- Contents -- Part I Aspects of Electron Transport Modeling -- 1 Concepts of Device Modeling -- 1.1 About Microelectronics -- 1.2 The Role of Modeling -- 1.3 Modeling of Semiconductor Devices -- 1.3.1 Basic Modules -- 1.3.2 Transport Models -- 1.3.3 Device Modeling: Aspects -- 2 The Semiconductor Model: Fundamentals -- 2.1 Crystal Lattice Electrons -- 2.1.1 Band Structure -- 2.1.2 Carrier Dynamics -- 2.1.3 Charge Transport -- 2.2 Lattice Imperfections -- 2.2.1 Phonons -- 2.2.2 Phonon Scattering -- 3 Transport Theories in Phase Space -- 3.1 Classical Transport: Boltzmann Equation -- 3.1.1 Phenomenological Derivation -- 3.1.2 Parametrization -- 3.1.3 Classical Distribution Function -- 3.2 Quantum Transport: Wigner Equation -- 3.2.1 Operator Mechanics -- 3.2.2 Quantum Mechanics in Phase Space -- 3.2.3 Derivation of the Wigner Equation -- 3.2.4 Properties of the Wigner Equation -- 3.2.5 Classical Limit of the Wigner Equation -- 4 Monte Carlo Computing -- 4.1 The Monte Carlo Method for Solving Integrals -- 4.2 The Monte Carlo Method for Solving Integral Equations -- 4.3 Monte Carlo Integration and Variance Analysis -- Part II Stochastic Algorithms for Boltzmann Transport -- 5 Homogeneous Transport: Empirical Approach -- 5.1 Single-Particle Algorithm -- 5.1.1 Single-Particle Trajectory -- 5.1.2 Mean Values -- 5.1.3 Concept of Self-Scattering -- 5.1.4 Boundary Conditions -- 5.2 Ensemble Algorithm -- 5.3 Algorithms for Statistical Enhancement -- 6 Homogeneous Transport: Stochastic Approach -- 6.1 Trajectory Integral Algorithm -- 6.2 Backward Algorithm -- 6.3 Iteration Approach -- 6.3.1 Derivation of the Backward Algorithm -- 6.3.2 Derivation of Empirical Algorithms -- 6.3.3 Featured Applications -- 7 Small Signal Analysis -- 7.1 Empirical Approach -- 7.1.1 Stationary Algorithms.
7.1.2 Time Dependent Algorithms -- 7.2 Iteration Approach: Stochastic Model -- 7.3 Iteration Approach: Generalizing the Empirical Algorithms -- 7.3.1 Derivation of Finite Difference Algorithms -- 7.3.2 Derivation of Collinear Perturbation Algorithms -- 8 Inhomogeneous Stationary Transport -- 8.1 Stationary Conditions -- 8.2 Iteration Approach: Forward Stochastic Model -- 8.2.1 Adjoint Equation -- 8.2.2 Boundary Conditions -- 8.3 Iteration Approach: Single-Particle Algorithm and Ergodicity -- 8.3.1 Averaging on Before-Scattering States -- 8.3.2 Averaging in Time: Ergodicity -- 8.3.3 The Choice of Boundary -- 8.4 Iteration Approach: Trajectory Splitting Algorithm -- 8.5 Iteration Approach: Modified Backward Algorithm -- 8.6 A Comparison of Forward and Backward Approaches -- 9 General Transport: Self-Consistent Mixed Problem -- 9.1 Formulation of the Problem -- 9.2 The Adjoint Equation -- 9.3 Initial and Boundary Conditions -- 9.3.1 Initial Condition -- 9.3.2 Boundary Conditions -- 9.3.3 Carrier Number Fluctuations -- 9.4 Stochastic Device Modeling: Features -- 10 Event Biasing -- 10.1 Biasing of Initial and Boundary Conditions -- 10.1.1 Initial Condition -- 10.1.2 Boundary Conditions -- 10.2 Biasing of the Natural Evolution -- 10.2.1 Free Flight -- 10.2.2 Phonon Scattering -- 10.3 Self-Consistent Event Biasing -- Part III Stochastic Algorithms for Quantum Transport -- 11 Wigner Function Modeling -- 12 Evolution in a Quantum Wire -- 12.1 Formulation of the Problem -- 12.2 Generalized Wigner Equation -- 12.3 Equation of Motion of the Diagonal Elements -- 12.4 Closure at First-Off-Diagonal Level -- 12.5 Closure at Second-Off-Diagonal Level -- 12.5.1 Approximation of the fFOD+ Equation -- 12.5.1.1 Contribution from fSOD++, -- 12.5.1.2 Contribution from fSOD+,- -- 12.5.1.3 Correction from fSOD+-, -- 12.5.1.4 Correction from fSOD+,+. |
| Record Nr. | UNINA-9910484446203321 |
|
Nedjalkov Mihail
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| Cham, Switzerland : , : Birkhäuser, , [2021] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Stochastic approaches to electron transport in micro- and nanostructures / / Mihail Nedjalkov, Ivan Dimov, Siegfried Selberherr
| Stochastic approaches to electron transport in micro- and nanostructures / / Mihail Nedjalkov, Ivan Dimov, Siegfried Selberherr |
| Autore | Nedjalkov Mihail |
| Pubbl/distr/stampa | Cham, Switzerland : , : Birkhäuser, , [2021] |
| Descrizione fisica | 1 online resource (xvi, 214 pages) : illustrations |
| Disciplina | 574.192 |
| Collana | Modeling and simulation in science, engineering & technology |
| Soggetto topico |
Electron transport - Mathematical models
Microelectronics - Mathematical models Nanoelectronics - Mathematical models Charge carrier processes Transport d'electrons Microelectrònica Nanoelectrònica Models matemàtics |
| Soggetto genere / forma | Llibres electrònics |
| ISBN | 3-030-67917-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Preface -- Introduction to the Parts -- Contents -- Part I Aspects of Electron Transport Modeling -- 1 Concepts of Device Modeling -- 1.1 About Microelectronics -- 1.2 The Role of Modeling -- 1.3 Modeling of Semiconductor Devices -- 1.3.1 Basic Modules -- 1.3.2 Transport Models -- 1.3.3 Device Modeling: Aspects -- 2 The Semiconductor Model: Fundamentals -- 2.1 Crystal Lattice Electrons -- 2.1.1 Band Structure -- 2.1.2 Carrier Dynamics -- 2.1.3 Charge Transport -- 2.2 Lattice Imperfections -- 2.2.1 Phonons -- 2.2.2 Phonon Scattering -- 3 Transport Theories in Phase Space -- 3.1 Classical Transport: Boltzmann Equation -- 3.1.1 Phenomenological Derivation -- 3.1.2 Parametrization -- 3.1.3 Classical Distribution Function -- 3.2 Quantum Transport: Wigner Equation -- 3.2.1 Operator Mechanics -- 3.2.2 Quantum Mechanics in Phase Space -- 3.2.3 Derivation of the Wigner Equation -- 3.2.4 Properties of the Wigner Equation -- 3.2.5 Classical Limit of the Wigner Equation -- 4 Monte Carlo Computing -- 4.1 The Monte Carlo Method for Solving Integrals -- 4.2 The Monte Carlo Method for Solving Integral Equations -- 4.3 Monte Carlo Integration and Variance Analysis -- Part II Stochastic Algorithms for Boltzmann Transport -- 5 Homogeneous Transport: Empirical Approach -- 5.1 Single-Particle Algorithm -- 5.1.1 Single-Particle Trajectory -- 5.1.2 Mean Values -- 5.1.3 Concept of Self-Scattering -- 5.1.4 Boundary Conditions -- 5.2 Ensemble Algorithm -- 5.3 Algorithms for Statistical Enhancement -- 6 Homogeneous Transport: Stochastic Approach -- 6.1 Trajectory Integral Algorithm -- 6.2 Backward Algorithm -- 6.3 Iteration Approach -- 6.3.1 Derivation of the Backward Algorithm -- 6.3.2 Derivation of Empirical Algorithms -- 6.3.3 Featured Applications -- 7 Small Signal Analysis -- 7.1 Empirical Approach -- 7.1.1 Stationary Algorithms.
7.1.2 Time Dependent Algorithms -- 7.2 Iteration Approach: Stochastic Model -- 7.3 Iteration Approach: Generalizing the Empirical Algorithms -- 7.3.1 Derivation of Finite Difference Algorithms -- 7.3.2 Derivation of Collinear Perturbation Algorithms -- 8 Inhomogeneous Stationary Transport -- 8.1 Stationary Conditions -- 8.2 Iteration Approach: Forward Stochastic Model -- 8.2.1 Adjoint Equation -- 8.2.2 Boundary Conditions -- 8.3 Iteration Approach: Single-Particle Algorithm and Ergodicity -- 8.3.1 Averaging on Before-Scattering States -- 8.3.2 Averaging in Time: Ergodicity -- 8.3.3 The Choice of Boundary -- 8.4 Iteration Approach: Trajectory Splitting Algorithm -- 8.5 Iteration Approach: Modified Backward Algorithm -- 8.6 A Comparison of Forward and Backward Approaches -- 9 General Transport: Self-Consistent Mixed Problem -- 9.1 Formulation of the Problem -- 9.2 The Adjoint Equation -- 9.3 Initial and Boundary Conditions -- 9.3.1 Initial Condition -- 9.3.2 Boundary Conditions -- 9.3.3 Carrier Number Fluctuations -- 9.4 Stochastic Device Modeling: Features -- 10 Event Biasing -- 10.1 Biasing of Initial and Boundary Conditions -- 10.1.1 Initial Condition -- 10.1.2 Boundary Conditions -- 10.2 Biasing of the Natural Evolution -- 10.2.1 Free Flight -- 10.2.2 Phonon Scattering -- 10.3 Self-Consistent Event Biasing -- Part III Stochastic Algorithms for Quantum Transport -- 11 Wigner Function Modeling -- 12 Evolution in a Quantum Wire -- 12.1 Formulation of the Problem -- 12.2 Generalized Wigner Equation -- 12.3 Equation of Motion of the Diagonal Elements -- 12.4 Closure at First-Off-Diagonal Level -- 12.5 Closure at Second-Off-Diagonal Level -- 12.5.1 Approximation of the fFOD+ Equation -- 12.5.1.1 Contribution from fSOD++, -- 12.5.1.2 Contribution from fSOD+,- -- 12.5.1.3 Correction from fSOD+-, -- 12.5.1.4 Correction from fSOD+,+. |
| Record Nr. | UNISA-996466553703316 |
|
Nedjalkov Mihail
|
||
| Cham, Switzerland : , : Birkhäuser, , [2021] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
