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Advanced SPICE model for GaN HEMTs (ASM-HEMT) : a new industry-standard compact model for GaN-based power and RF circuit design / / Sourabh Khandelwal
| Advanced SPICE model for GaN HEMTs (ASM-HEMT) : a new industry-standard compact model for GaN-based power and RF circuit design / / Sourabh Khandelwal |
| Autore | Khandelwal Sourabh |
| Pubbl/distr/stampa | Cham, Switzerland : , : Springer, , [2022] |
| Descrizione fisica | 1 online resource (194 pages) |
| Disciplina | 621.3815284 |
| Soggetto topico |
Modulation-doped field-effect transistors
Radio frequency integrated circuits Semiconductors |
| ISBN |
9783030777302
9783030777296 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910523725103321 |
Khandelwal Sourabh
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| Cham, Switzerland : , : Springer, , [2022] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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IEEE Recommended Practices for Modulating Current in High-Brightness LEDs for Mitigating Health Risks to Viewers / / IEEE
| IEEE Recommended Practices for Modulating Current in High-Brightness LEDs for Mitigating Health Risks to Viewers / / IEEE |
| Pubbl/distr/stampa | New York, N.Y. : , : IEEE, , 2015 |
| Descrizione fisica | 1 online resource (x, 66 pages) : illustrations |
| Disciplina | 621.3 |
| Collana | IEEE Std |
| Soggetto topico | Modulation-doped field-effect transistors |
| ISBN | 0-7381-9644-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | IEEE Std 1789-2015: IEEE Recommended Practices for Modulating Current in High-Brightness LEDs for Mitigating Health Risks to Viewers |
| Record Nr. | UNISA-996278282903316 |
| New York, N.Y. : , : IEEE, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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IEEE Recommended Practices for Modulating Current in High-Brightness LEDs for Mitigating Health Risks to Viewers / / IEEE
| IEEE Recommended Practices for Modulating Current in High-Brightness LEDs for Mitigating Health Risks to Viewers / / IEEE |
| Pubbl/distr/stampa | New York, N.Y. : , : IEEE, , 2015 |
| Descrizione fisica | 1 online resource (x, 66 pages) : illustrations |
| Disciplina | 621.3 |
| Collana | IEEE Std |
| Soggetto topico | Modulation-doped field-effect transistors |
| ISBN | 0-7381-9644-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | IEEE Std 1789-2015: IEEE Recommended Practices for Modulating Current in High-Brightness LEDs for Mitigating Health Risks to Viewers |
| Record Nr. | UNINA-9910136020703321 |
| New York, N.Y. : , : IEEE, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva
| Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva |
| Autore | Nosaeva Ksenia |
| Edizione | [1. Auflage.] |
| Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2016 |
| Descrizione fisica | 1 online resource (155 pages) : illustrations (some color), tables, graphs |
| Disciplina | 621.3815284 |
| Collana | Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik |
| Soggetto topico | Modulation-doped field-effect transistors |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-7369-8287-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910511640503321 |
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Nosaeva Ksenia
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| Gottingen, [Germany] : , : Cuvillier Verlag, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva
| Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva |
| Autore | Nosaeva Ksenia |
| Edizione | [1. Auflage.] |
| Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2016 |
| Descrizione fisica | 1 online resource (155 pages) : illustrations (some color), tables, graphs |
| Disciplina | 621.3815284 |
| Collana | Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik |
| Soggetto topico | Modulation-doped field-effect transistors |
| ISBN | 3-7369-8287-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910794942703321 |
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Nosaeva Ksenia
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| Gottingen, [Germany] : , : Cuvillier Verlag, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva
| Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva |
| Autore | Nosaeva Ksenia |
| Edizione | [1. Auflage.] |
| Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2016 |
| Descrizione fisica | 1 online resource (155 pages) : illustrations (some color), tables, graphs |
| Disciplina | 621.3815284 |
| Collana | Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik |
| Soggetto topico | Modulation-doped field-effect transistors |
| ISBN | 3-7369-8287-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910821367203321 |
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Nosaeva Ksenia
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| Gottingen, [Germany] : , : Cuvillier Verlag, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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