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Broadband microwave amplifiers / / Bal S. Virdee, Avtar S. Virdee, Ben Y. Banyamin
Broadband microwave amplifiers / / Bal S. Virdee, Avtar S. Virdee, Ben Y. Banyamin
Autore Virdee Bal S.
Pubbl/distr/stampa Boston : , : Artech House, , ©2004
Descrizione fisica 1 online resource (251 p.)
Disciplina 621.381/325
Altri autori (Persone) VirdeeAvtar S
BanyaminBen Y
Collana Artech House microwave library
Soggetto topico Microwave amplifiers
Microwave devices
Soggetto genere / forma Electronic books.
ISBN 1-58053-893-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Machine generated contents note: Ch. 1 Overview of broadband amplifiers -- Ch. 2 Principles and applications of distributed amplifiers -- Ch. 3 Device structure and mode of operation -- Ch. 4 Device characterization and modeling -- Ch. 5
Record Nr. UNINA-9910451039303321
Virdee Bal S.  
Boston : , : Artech House, , ©2004
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Broadband microwave amplifiers / / Bal S. Virdee, Avtar S. Virdee, Ben Y. Banyamin
Broadband microwave amplifiers / / Bal S. Virdee, Avtar S. Virdee, Ben Y. Banyamin
Autore Virdee Bal S.
Pubbl/distr/stampa Boston : , : Artech House, , ©2004
Descrizione fisica 1 online resource (251 p.)
Disciplina 621.381/325
Altri autori (Persone) VirdeeAvtar S
BanyaminBen Y
Collana Artech House microwave library
Soggetto topico Microwave amplifiers
Microwave devices
ISBN 1-58053-893-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Machine generated contents note: Ch. 1 Overview of broadband amplifiers -- Ch. 2 Principles and applications of distributed amplifiers -- Ch. 3 Device structure and mode of operation -- Ch. 4 Device characterization and modeling -- Ch. 5
Record Nr. UNINA-9910784135703321
Virdee Bal S.  
Boston : , : Artech House, , ©2004
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Broadband microwave amplifiers / / Bal S. Virdee, Avtar S. Virdee, Ben Y. Banyamin
Broadband microwave amplifiers / / Bal S. Virdee, Avtar S. Virdee, Ben Y. Banyamin
Autore Virdee Bal S.
Pubbl/distr/stampa Boston : , : Artech House, , ©2004
Descrizione fisica 1 online resource (251 p.)
Disciplina 621.381/325
Altri autori (Persone) VirdeeAvtar S
BanyaminBen Y
Collana Artech House microwave library
Soggetto topico Microwave amplifiers
Microwave devices
ISBN 1-58053-893-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Machine generated contents note: Ch. 1 Overview of broadband amplifiers -- Ch. 2 Principles and applications of distributed amplifiers -- Ch. 3 Device structure and mode of operation -- Ch. 4 Device characterization and modeling -- Ch. 5
Record Nr. UNINA-9910829143503321
Virdee Bal S.  
Boston : , : Artech House, , ©2004
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl
Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl
Autore Bahl I. J
Pubbl/distr/stampa Oxford, : Wiley, 2009
Descrizione fisica 1 online resource (697 p.)
Disciplina 621.3815/35
621.381535
Soggetto topico Amplifiers, Radio frequency
Microwave amplifiers
Transistor amplifiers
Soggetto genere / forma Electronic books.
ISBN 1-282-36840-0
9786612368400
0-470-46234-5
0-470-46231-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Fundamentals of RF and Microwave Transistor Amplifiers; Contents in Brief; Contents; Foreword; Preface; 1. Introduction; 1.1. Transistor Amplifier; 1.2. Early History of Transistor Amplifiers; 1.3. Benefits of Transistor Amplifiers; 1.4. Transistors; 1.5. Design of Amplifiers; 1.6. Amplifier Manufacturing Technologies; 1.7. Applications of Amplifiers; 1.8. Amplifier Cost; 1.9. Current Trends; 1.10. Book Organization; References; 2. Linear Network Analysis; 2.1. Impedance Matrix; 2.2. Admittance Matrix; 2.3. ABCD Parameters; 2.4. S-Parameters; 2.4.1. S-Parameters for a One-Port Network
2.5. Relationships Between Various Two-Port ParametersReferences; Problems; 3. Amplifier Characteristics and Definitions; 3.1. Bandwidth; 3.2. Power Gain; 3.3. Input and Output VSWR; 3.4. Output Power; 3.5. Power Added Efficiency; 3.6. Intermodulation Distortion; 3.6.1. IP3; 3.6.2. ACPR; 3.6.3. EVM; 3.7. Harmonic Power; 3.8. Peak-to-Average Ratio; 3.9. Combiner Efficiency; 3.10. Noise Characterization; 3.10.1. Noise Figure; 3.10.2. Noise Temperature; 3.10.3. Noise Bandwidth; 3.10.4. Optimum Noise Match; 3.10.5. Constant Noise Figure and Gain Circles; 3.10.6. Simultaneous Input and Noise Match
3.11. Dynamic Range3.12. Multistage Amplifier Characteristics; 3.12.1. Multistage IP3; 3.12.2. Multistage PAE; 3.12.3. Multistage NF; 3.13. Gate and Drain Pushing Factors; 3.14. Amplifier Temperature Coefficient; 3.15. Mean Time to Failure; References; Problems; 4. Transistors; 4.1. Transistor Types; 4.2. Silicon Bipolar Transistor; 4.2.1. Figure of Merit; 4.2.2. High-Frequency Noise Performance of Silicon BJT; 4.2.3. Power Performance; 4.3. GaAs MESFET; 4.3.1. Small-Signal Equivalent Circuit; 4.3.2. Figure of Merit; 4.3.3. High-Frequency Noise Properties of MESFETs
4.4. Heterojunction Field Effect Transistor4.4.1. High-Frequency Noise Properties of HEMTs; 4.4.2. Indium Phosphide pHEMTs; 4.5. Heterojunction Bipolar Transistors; 4.5.1. High-Frequency Noise Properties of HBTs; 4.5.2. SiGe Heterojunction Bipolar Transistors; 4.6. MOSFET; References; Problems; 5. Transistor Models; 5.1. Transistor Model Types; 5.1.1. Physics/Electromagnetic Theory Based Models; 5.1.2. Analytical or Hybrid Models; 5.1.3. Measurement Based Models; 5.2. MESFET Models; 5.2.1. Linear Models; 5.2.2. Nonlinear Models; 5.3. pHEMT Models; 5.3.1. Linear Models; 5.3.2. Nonlinear Models
5.4. HBT Model5.5. MOSFET Models; 5.6. BJT Models; 5.7. Transistor Model Scaling; 5.8. Source-Pull and Load-Pull Data; 5.8.1. Theoretical Load-Pull Data; 5.8.2. Measured Power and PAE Source Pull and Load Pull; 5.8.3. Measured IP3 Source and Load Impedance; 5.8.4. Source and Load Impedance Scaling; 5.9. Temperature-Dependent Models; References; Problems; 6. Matching Network Components; 6.1. Impedance Matching Elements; 6.2. Transmission Line Matching Elements; 6.2.1. Microstrip; 6.2.2. Coplanar Lines; 6.3. Lumped Elements; 6.3.1. Capacitors; 6.3.2. Inductors; 6.3.3. Resistors
6.4. Bond Wire Inductors
Record Nr. UNINA-9910139979603321
Bahl I. J  
Oxford, : Wiley, 2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl
Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl
Autore Bahl I. J
Pubbl/distr/stampa Oxford, : Wiley, 2009
Descrizione fisica 1 online resource (697 p.)
Disciplina 621.3815/35
621.381535
Soggetto topico Amplifiers, Radio frequency
Microwave amplifiers
Transistor amplifiers
ISBN 1-282-36840-0
9786612368400
0-470-46234-5
0-470-46231-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Fundamentals of RF and Microwave Transistor Amplifiers; Contents in Brief; Contents; Foreword; Preface; 1. Introduction; 1.1. Transistor Amplifier; 1.2. Early History of Transistor Amplifiers; 1.3. Benefits of Transistor Amplifiers; 1.4. Transistors; 1.5. Design of Amplifiers; 1.6. Amplifier Manufacturing Technologies; 1.7. Applications of Amplifiers; 1.8. Amplifier Cost; 1.9. Current Trends; 1.10. Book Organization; References; 2. Linear Network Analysis; 2.1. Impedance Matrix; 2.2. Admittance Matrix; 2.3. ABCD Parameters; 2.4. S-Parameters; 2.4.1. S-Parameters for a One-Port Network
2.5. Relationships Between Various Two-Port ParametersReferences; Problems; 3. Amplifier Characteristics and Definitions; 3.1. Bandwidth; 3.2. Power Gain; 3.3. Input and Output VSWR; 3.4. Output Power; 3.5. Power Added Efficiency; 3.6. Intermodulation Distortion; 3.6.1. IP3; 3.6.2. ACPR; 3.6.3. EVM; 3.7. Harmonic Power; 3.8. Peak-to-Average Ratio; 3.9. Combiner Efficiency; 3.10. Noise Characterization; 3.10.1. Noise Figure; 3.10.2. Noise Temperature; 3.10.3. Noise Bandwidth; 3.10.4. Optimum Noise Match; 3.10.5. Constant Noise Figure and Gain Circles; 3.10.6. Simultaneous Input and Noise Match
3.11. Dynamic Range3.12. Multistage Amplifier Characteristics; 3.12.1. Multistage IP3; 3.12.2. Multistage PAE; 3.12.3. Multistage NF; 3.13. Gate and Drain Pushing Factors; 3.14. Amplifier Temperature Coefficient; 3.15. Mean Time to Failure; References; Problems; 4. Transistors; 4.1. Transistor Types; 4.2. Silicon Bipolar Transistor; 4.2.1. Figure of Merit; 4.2.2. High-Frequency Noise Performance of Silicon BJT; 4.2.3. Power Performance; 4.3. GaAs MESFET; 4.3.1. Small-Signal Equivalent Circuit; 4.3.2. Figure of Merit; 4.3.3. High-Frequency Noise Properties of MESFETs
4.4. Heterojunction Field Effect Transistor4.4.1. High-Frequency Noise Properties of HEMTs; 4.4.2. Indium Phosphide pHEMTs; 4.5. Heterojunction Bipolar Transistors; 4.5.1. High-Frequency Noise Properties of HBTs; 4.5.2. SiGe Heterojunction Bipolar Transistors; 4.6. MOSFET; References; Problems; 5. Transistor Models; 5.1. Transistor Model Types; 5.1.1. Physics/Electromagnetic Theory Based Models; 5.1.2. Analytical or Hybrid Models; 5.1.3. Measurement Based Models; 5.2. MESFET Models; 5.2.1. Linear Models; 5.2.2. Nonlinear Models; 5.3. pHEMT Models; 5.3.1. Linear Models; 5.3.2. Nonlinear Models
5.4. HBT Model5.5. MOSFET Models; 5.6. BJT Models; 5.7. Transistor Model Scaling; 5.8. Source-Pull and Load-Pull Data; 5.8.1. Theoretical Load-Pull Data; 5.8.2. Measured Power and PAE Source Pull and Load Pull; 5.8.3. Measured IP3 Source and Load Impedance; 5.8.4. Source and Load Impedance Scaling; 5.9. Temperature-Dependent Models; References; Problems; 6. Matching Network Components; 6.1. Impedance Matching Elements; 6.2. Transmission Line Matching Elements; 6.2.1. Microstrip; 6.2.2. Coplanar Lines; 6.3. Lumped Elements; 6.3.1. Capacitors; 6.3.2. Inductors; 6.3.3. Resistors
6.4. Bond Wire Inductors
Record Nr. UNINA-9910831054003321
Bahl I. J  
Oxford, : Wiley, 2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl
Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl
Autore Bahl I. J
Pubbl/distr/stampa Oxford, : Wiley, 2009
Descrizione fisica 1 online resource (697 p.)
Disciplina 621.3815/35
621.381535
Soggetto topico Amplifiers, Radio frequency
Microwave amplifiers
Transistor amplifiers
ISBN 1-282-36840-0
9786612368400
0-470-46234-5
0-470-46231-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Fundamentals of RF and Microwave Transistor Amplifiers; Contents in Brief; Contents; Foreword; Preface; 1. Introduction; 1.1. Transistor Amplifier; 1.2. Early History of Transistor Amplifiers; 1.3. Benefits of Transistor Amplifiers; 1.4. Transistors; 1.5. Design of Amplifiers; 1.6. Amplifier Manufacturing Technologies; 1.7. Applications of Amplifiers; 1.8. Amplifier Cost; 1.9. Current Trends; 1.10. Book Organization; References; 2. Linear Network Analysis; 2.1. Impedance Matrix; 2.2. Admittance Matrix; 2.3. ABCD Parameters; 2.4. S-Parameters; 2.4.1. S-Parameters for a One-Port Network
2.5. Relationships Between Various Two-Port ParametersReferences; Problems; 3. Amplifier Characteristics and Definitions; 3.1. Bandwidth; 3.2. Power Gain; 3.3. Input and Output VSWR; 3.4. Output Power; 3.5. Power Added Efficiency; 3.6. Intermodulation Distortion; 3.6.1. IP3; 3.6.2. ACPR; 3.6.3. EVM; 3.7. Harmonic Power; 3.8. Peak-to-Average Ratio; 3.9. Combiner Efficiency; 3.10. Noise Characterization; 3.10.1. Noise Figure; 3.10.2. Noise Temperature; 3.10.3. Noise Bandwidth; 3.10.4. Optimum Noise Match; 3.10.5. Constant Noise Figure and Gain Circles; 3.10.6. Simultaneous Input and Noise Match
3.11. Dynamic Range3.12. Multistage Amplifier Characteristics; 3.12.1. Multistage IP3; 3.12.2. Multistage PAE; 3.12.3. Multistage NF; 3.13. Gate and Drain Pushing Factors; 3.14. Amplifier Temperature Coefficient; 3.15. Mean Time to Failure; References; Problems; 4. Transistors; 4.1. Transistor Types; 4.2. Silicon Bipolar Transistor; 4.2.1. Figure of Merit; 4.2.2. High-Frequency Noise Performance of Silicon BJT; 4.2.3. Power Performance; 4.3. GaAs MESFET; 4.3.1. Small-Signal Equivalent Circuit; 4.3.2. Figure of Merit; 4.3.3. High-Frequency Noise Properties of MESFETs
4.4. Heterojunction Field Effect Transistor4.4.1. High-Frequency Noise Properties of HEMTs; 4.4.2. Indium Phosphide pHEMTs; 4.5. Heterojunction Bipolar Transistors; 4.5.1. High-Frequency Noise Properties of HBTs; 4.5.2. SiGe Heterojunction Bipolar Transistors; 4.6. MOSFET; References; Problems; 5. Transistor Models; 5.1. Transistor Model Types; 5.1.1. Physics/Electromagnetic Theory Based Models; 5.1.2. Analytical or Hybrid Models; 5.1.3. Measurement Based Models; 5.2. MESFET Models; 5.2.1. Linear Models; 5.2.2. Nonlinear Models; 5.3. pHEMT Models; 5.3.1. Linear Models; 5.3.2. Nonlinear Models
5.4. HBT Model5.5. MOSFET Models; 5.6. BJT Models; 5.7. Transistor Model Scaling; 5.8. Source-Pull and Load-Pull Data; 5.8.1. Theoretical Load-Pull Data; 5.8.2. Measured Power and PAE Source Pull and Load Pull; 5.8.3. Measured IP3 Source and Load Impedance; 5.8.4. Source and Load Impedance Scaling; 5.9. Temperature-Dependent Models; References; Problems; 6. Matching Network Components; 6.1. Impedance Matching Elements; 6.2. Transmission Line Matching Elements; 6.2.1. Microstrip; 6.2.2. Coplanar Lines; 6.3. Lumped Elements; 6.3.1. Capacitors; 6.3.2. Inductors; 6.3.3. Resistors
6.4. Bond Wire Inductors
Record Nr. UNINA-9910841471403321
Bahl I. J  
Oxford, : Wiley, 2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Handbook of RF and microwave power amplifiers / / edited by John L.B. Walker [[electronic resource]]
Handbook of RF and microwave power amplifiers / / edited by John L.B. Walker [[electronic resource]]
Pubbl/distr/stampa Cambridge : , : Cambridge University Press, , 2012
Descrizione fisica 1 online resource (xiii, 687 pages) : digital, PDF file(s)
Disciplina 621.384/12
Collana The Cambridge RF and microwave engineering series
Soggetto topico Power amplifiers
Amplifiers, Radio frequency
Microwave amplifiers
ISBN 1-107-22450-0
1-139-15259-9
1-283-34222-7
9786613342225
1-139-16002-8
1-139-16102-4
1-139-15546-6
1-139-15721-3
1-139-01534-6
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Silicon LDMOS and VDMOS transistors : physics, design, and technology / Wayne Burger and Christopher P. Dragon -- GaAs FETs : physics, design, and models / Rob Davis -- Wide band gap transistors -- SiC and GaN : physics, design and models / Robert J. Trew -- Amplifier classes, A-S / Steve C. Cripps -- Computer-aided design of power amplifiers / Steven Maas -- Practical HF/VHF/UHF RF power amplifier realization / Daniel P. Myer -- Microwave hybrid amplifier realization / Dominic FitzPatrick -- Monolithic power amplifiers / Inder J. Bahl -- RF power amplifier thermal design / Mali Mahalingam -- Reliability / Bill Roesch -- Power amplifier applications / Mustafa Akkul and Wolfgang Bösch -- Amplifier measurements / Michael G. Hiebel.
Altri titoli varianti Handbook of RF & Microwave Power Amplifiers
Record Nr. UNINA-9910457510503321
Cambridge : , : Cambridge University Press, , 2012
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Handbook of RF and microwave power amplifiers / / edited by John L.B. Walker [[electronic resource]]
Handbook of RF and microwave power amplifiers / / edited by John L.B. Walker [[electronic resource]]
Pubbl/distr/stampa Cambridge : , : Cambridge University Press, , 2012
Descrizione fisica 1 online resource (xiii, 687 pages) : digital, PDF file(s)
Disciplina 621.384/12
Collana The Cambridge RF and microwave engineering series
Soggetto topico Power amplifiers
Amplifiers, Radio frequency
Microwave amplifiers
ISBN 1-107-22450-0
1-139-15259-9
1-283-34222-7
9786613342225
1-139-16002-8
1-139-16102-4
1-139-15546-6
1-139-15721-3
1-139-01534-6
Classificazione TEC024000
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Silicon LDMOS and VDMOS transistors : physics, design, and technology / Wayne Burger and Christopher P. Dragon -- GaAs FETs : physics, design, and models / Rob Davis -- Wide band gap transistors -- SiC and GaN : physics, design and models / Robert J. Trew -- Amplifier classes, A-S / Steve C. Cripps -- Computer-aided design of power amplifiers / Steven Maas -- Practical HF/VHF/UHF RF power amplifier realization / Daniel P. Myer -- Microwave hybrid amplifier realization / Dominic FitzPatrick -- Monolithic power amplifiers / Inder J. Bahl -- RF power amplifier thermal design / Mali Mahalingam -- Reliability / Bill Roesch -- Power amplifier applications / Mustafa Akkul and Wolfgang Bösch -- Amplifier measurements / Michael G. Hiebel.
Altri titoli varianti Handbook of RF & Microwave Power Amplifiers
Record Nr. UNINA-9910781867803321
Cambridge : , : Cambridge University Press, , 2012
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Handbook of RF and microwave power amplifiers / / edited by John L.B. Walker [[electronic resource]]
Handbook of RF and microwave power amplifiers / / edited by John L.B. Walker [[electronic resource]]
Pubbl/distr/stampa Cambridge : , : Cambridge University Press, , 2012
Descrizione fisica 1 online resource (xiii, 687 pages) : digital, PDF file(s)
Disciplina 621.384/12
Collana The Cambridge RF and microwave engineering series
Soggetto topico Power amplifiers
Amplifiers, Radio frequency
Microwave amplifiers
ISBN 1-107-22450-0
1-139-15259-9
1-283-34222-7
9786613342225
1-139-16002-8
1-139-16102-4
1-139-15546-6
1-139-15721-3
1-139-01534-6
Classificazione TEC024000
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Silicon LDMOS and VDMOS transistors : physics, design, and technology / Wayne Burger and Christopher P. Dragon -- GaAs FETs : physics, design, and models / Rob Davis -- Wide band gap transistors -- SiC and GaN : physics, design and models / Robert J. Trew -- Amplifier classes, A-S / Steve C. Cripps -- Computer-aided design of power amplifiers / Steven Maas -- Practical HF/VHF/UHF RF power amplifier realization / Daniel P. Myer -- Microwave hybrid amplifier realization / Dominic FitzPatrick -- Monolithic power amplifiers / Inder J. Bahl -- RF power amplifier thermal design / Mali Mahalingam -- Reliability / Bill Roesch -- Power amplifier applications / Mustafa Akkul and Wolfgang Bösch -- Amplifier measurements / Michael G. Hiebel.
Altri titoli varianti Handbook of RF & Microwave Power Amplifiers
Record Nr. UNINA-9910827956603321
Cambridge : , : Cambridge University Press, , 2012
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
High efficiency RF and microwave solid state power amplifiers [[electronic resource] /] / Paolo Colantonio, Franco Giannini, Ernesto Limiti
High efficiency RF and microwave solid state power amplifiers [[electronic resource] /] / Paolo Colantonio, Franco Giannini, Ernesto Limiti
Autore Colantonio Paolo
Pubbl/distr/stampa Chichester, UK, : J. Wiley, 2009
Descrizione fisica 1 online resource (520 p.)
Disciplina 621.381325
Altri autori (Persone) GianniniFranco <1944->
LimitiErnesto
Collana Wiley series in microwave and optical engineering
Soggetto topico Power amplifiers
Amplifiers, Radio frequency
Microwave amplifiers
Solid state electronics
ISBN 1-282-23756-X
9786612237560
0-470-74654-8
0-470-74655-6
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto High Efficiency RF and Microwave Solid State Power Amplifiers; Contents; Preface; About the Authors; Acknowledgments; 1 Power Amplifier Fundamentals; 1.1 Introduction; 1.2 Definition of Power Amplifier Parameters; 1.3 Distortion Parameters; 1.3.1 Harmonic Distortion; 1.3.2 AM-AM/AM-PM; 1.3.3 Two-tone Intermodulation; 1.3.4 Intercept Point IPn; 1.3.5 Carrier to Intermodulation Ratio; 1.3.6 Spurious Free Dynamic Range; 1.3.7 Adjacent Channel Power Ratio; 1.3.8 Noise and Co-Channel Power Ratio (NPR and CCPR); 1.3.9 Multi-tone Intermodulation Ratio; 1.3.10 Error Vector Magnitude
1.4 Power Match Condition 1.5 Class of Operation; 1.6 Overview of Semiconductors for PAs; 1.7 Devices for PA; 1.7.1 Requirements for Power Devices; 1.7.2 BJT; 1.7.3 HBT; 1.7.4 FET; 1.7.5 MOSFET; 1.7.6 LDMOS; 1.7.7 MESFET; 1.7.8 HEMT; 1.7.9 General Remarks; 1.8 Appendix: Demonstration of Useful Relationships; 1.9 References; 2 Power Amplifier Design; 2.1 Introduction; 2.2 Design Flow; 2.3 Simplified Approaches; 2.4 The Tuned Load Amplifier; 2.5 Sample Design of a Tuned Load PA; 2.6 References; 3 Nonlinear Analysis for Power Amplifiers; 3.1 Introduction; 3.2 Linear vs. Nonlinear Circuits
3.3 Time Domain Integration 3.3.1 Iterative Algorithm (Newton-Raphson and Fixed-point); 3.4 Example; 3.4.1 Forward Euler Solution; 3.4.2 Backward Euler Solution; 3.4.3 Steady-state Analysis and Shooting Method; 3.4.4 Example; 3.5 Solution by Series Expansion; 3.6 The Volterra Series; 3.6.1 Response to a Single-tone Excitation; 3.6.2 Response to a Two-tone Excitation; 3.6.3 The Probing Method; 3.6.4 Example; 3.6.5 Cascade of Systems; 3.7 The Fourier Series; 3.8 The Harmonic Balance; 3.8.1 Example; 3.8.2 Multi-tone HB Analysis; 3.9 Envelope Analysis; 3.10 Spectral Balance
3.11 Large Signal Stability Issue 3.12 References; 4 Load Pull; 4.1 Introduction; 4.2 Passive Source/Load Pull Measurement Systems; 4.3 Active Source/Load Pull Measurement Systems; 4.3.1 Two-signal Path Technique; 4.3.2 Active Loop Technique; 4.4 Measurement Test-sets; 4.4.1 Scalar Systems; 4.4.2 VNA Based Systems; 4.4.3 Six-port Reflectometer Based Systems; 4.5 Advanced Load Pull Measurements; 4.5.1 Intermodulation Measurements; 4.5.2 Time-domain Waveform Load Pull; 4.5.3 Pulsed Load Pull; 4.6 Source/Load Pull Characterization; 4.7 Determination of Optimum Load Condition
4.7.1 Example of Simplified Load Pull Contour 4.7.2 Design of an Amplifier Stage using Simplified Load Pull Contours; 4.8 Appendix: Construction of Simplified Load Pull Contours through Linear Simulations; 4.9 References; 5 High Efficiency PA Design Theory; 5.1 Introduction; 5.2 Power Balance in a PA; 5.3 Ideal Approaches; 5.3.1 Tuned Load; 5.3.2 Class F or Inverse Class F (Class F-1); 5.3.3 Class E or General Switched-mode; 5.4 High Frequency Harmonic Tuning Approaches; 5.4.1 Mathematical Statements; 5.5 High Frequency Third Harmonic Tuned (Class F); 5.6 High Frequency Second Harmonic Tuned
5.7 High Frequency Second and Third Harmonic Tuned
Record Nr. UNINA-9910139765403321
Colantonio Paolo  
Chichester, UK, : J. Wiley, 2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui