Pubbl/distr/stampa	New York, New York : , : IEEE, , 1980
Descrizione fisica	1 online resource
Disciplina	621.381
Soggetto topico	Microelectronics - Materials Electronic circuits - Standards
ISBN	0-7381-4294-8
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Altri titoli varianti	C57.12.11-1980 - IEEE Guide for Installation of Oil-Immersed Transformers ANSI/IEEE Std C57.12.11-1980: IEEE Guide for Installation of Oil-Immersed Transformers (10 MVA and Larger 69-287 kV Rating)
Record Nr.	UNINA-9910135770503321

Pubbl/distr/stampa	Washington, D.C., : National Academy Press, 1992
Descrizione fisica	1 online resource (101 p.)
Disciplina	621.381
Soggetto topico	Microelectronics industry Molecular beams - Industrial applications Microelectronics - Materials Plasma-enhanced chemical vapor deposition - Industrial applications
Soggetto genere / forma	Electronic books.
ISBN	1-280-21147-4 9786610211470 0-309-58395-0 0-585-14945-3
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Record Nr.	UNINA-9910455972503321

Edizione	[1st ed.]
Pubbl/distr/stampa	Washington, D.C., : National Academy Press, 1992
Descrizione fisica	1 online resource (101 p.)
Disciplina	621.381
Soggetto topico	Microelectronics industry Molecular beams - Industrial applications Microelectronics - Materials Plasma-enhanced chemical vapor deposition - Industrial applications
ISBN	9786610211470 9781280211478 1280211474 9780309583954 0309583950 9780585149455 0585149453
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Nota di contenuto	BEAM TECHNOLOGIES FOR INTEGRATED PROCESSING -- Copyright -- ABSTRACT -- PREFACE -- ACKNOWLEDGMENTS -- Contents -- 1 Introduction -- 2 SUMMARY AND RECOMMENDATIONS -- SUMMARY -- Electronic Materials -- Engineered Materials -- Integrated Processing -- RECOMMENDATIONS -- 3 BEAM TECHNOLOGIES -- ATOMIC AND MOLECULAR MATERIAL BEAMS -- Physical Vapor Deposition -- Direct Evaporation Processes -- Direct Reactive Evaporation Processes -- Direct Sputtering Processes -- Reactive Sputtering Processes -- Ion Beam Sputtering Processes -- Molecular Beam Epitaxy -- Chemical Vapor Deposition Processes -- Microwave Electron Cyclotron Resonance Plasmas -- Ion Beams -- Energy Beams -- Laser Beams -- Electron Beams -- X-Ray Lithography -- Microwave Beams -- REFERENCES -- 4 BEAM APPLICATIONS IN MICROELECTRONICS -- BEAM APPLICATIONS IN SEMICONDUCTOR DEVICE MANUFACTURE -- Silicon Integrated Circuits -- Beam Technologies For Materials Deposition -- Beam Technologies For Patterning -- Beam Technologies For Etching -- BEAM TECHNOLOGIES FOR COMPOUND SEMICONDUCTOR ICS -- Beam Technologies For Materials Deposition -- Beam Technologies For Heating -- OPTOELECTRONICS -- REFERENCES -- 5 BEAM APPLICATIONS IN ENGINEERED MATERIALS -- COATINGS -- Diamond, Diamond-Like Carbon, And Cubic Boron Nitride Coatings -- SURFACE MODIFICATION -- APPLICATIONS OF LASERS TO MATERIALS FORMING -- Shaping And Removal -- Desktop Deposition -- Joining -- POWDER PREPARATION -- COMPOSITES FABRICATION -- Fiber And Whisker Preparation -- Metal-Matrix Composites Fabrication -- Ceramic-Matrix Composites Fabrication -- NANOPHASE MATERIALS -- OPTICAL SURFACES AND DEVICES -- POLYMERS -- MATERIALS FOR ENERGY PRODUCTION -- BIOIMPLANT DEVICES -- REFERENCES -- 6 INTEGRATED PROCESSING -- INTEGRATED PROCESSING IN MICROELECTRONICS -- Integrated Processing For Integrated Circuits. Traditional Integrated Circuit Processing Techniques -- Advances Toward Integrated Processing -- Integrated Processing Tools -- Applications For Integrated Processing Tools -- INTEGRATED PROCESSING FOR METALS AND CERAMICS -- Architectural Glass Coatings -- In-Line Dry Coating Process For Stainless Steel Sheet -- Mechanical Fabrication -- REFERENCES -- 7 REQUIREMENTS AND PROBLEMS FOR FURTHER INTEGRATION -- REFERENCE -- APPENDIX A ACRONYMS AND ABBREVIATIONS -- APPENDIX B BIOGRAPHICAL SKETCHES OF COMMITTEE MEMBERS.
Record Nr.	UNINA-9910960966703321

Autore	Steigerwald Joseph M
Pubbl/distr/stampa	Weinheim, : Wiley-VCH, 2004
Descrizione fisica	1 online resource (339 p.)
Disciplina	621.3815 621.38152
Altri autori (Persone)	MurarkaS. P GutmannRonald J
Soggetto topico	Microelectronics - Materials Grinding and polishing
ISBN	1-281-84314-8 9786611843144 3-527-61774-4 3-527-61775-2
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Nota di contenuto	Chemical Mechanical Planarization of Microelectronic Materials; CONTENTS; Preface; 1 Chemical Mechanical Planarization - An Introduction; 1.1 Introduction; 1.2 Applications; 1.3 The CMP Process; 1.4 CMP Tools; 1.5 Process Integration; 1.6 Conclusion and Book Outline; References; 2 Historical Motivations for CMP; 2.1 Advanced Metallization Schemes; 2.1.1 Interconnect Delay Impact on Performance; 2.1.2 Methods of Reducing Interconnect Delay; 2.1.3 Planarity Requirements for Multilevel Metallization; 2.2 Planarization Schemes; 2.2.1 Smoothing and Local Planarization; 2.2.2 Global Planarization 2.3 CMP Planarization2.3.1 Advantages of CMP; 2.3.2 Disadvantages of CMP; 2.3.3 The Challenge of CMP; References; 3 CMP Variables and Manipulations; 3.1 Output Variables; 3.2 Input Variables; References; 4 Mechanical and Electrochemical Concepts for CMP; 4.1 Preston Equation; 4.2 Fluid Layer Interactions; 4.3 Boundary Layer Interactions; 4.3.1 Fluid Boundary Layer; 4.3.2 Double Layer; 4.3.3 Metal Surface Films; 4.3.4 Mechanical Abrasion; 4.4 Abrasion Modes; 4.4.1 Polishing vs. Grinding; 4.4.2 Hertzian Indentation vs. Fluid-Based Wear; 4.5 The Polishing Pad; 4.5.1 Pad Materials and Properties 4.5.2 Pad Conditioning4.6 Electrochemical Phenomena; 4.6.1 Reduction-Oxidation Reactions; 4.6.2 Pourbaix Diagrams; 4.6.3 Mixed Potential Theory; 4.6.4 Example: Copper CMP in NH3-Based Slurries; 4.6.5 Example: Copper-Titanium Interaction; 4.7 Role of Chemistry in CMP; 4.8 Abrasives; References; 5 Oxide CMP Processes - Mechanisms and Models; 5.1 The Role of Chemistry in Oxide Polishing; 5.1.1 Glass Polishing Mechanisms; 5.1.2 The Role of Water in Oxide Polishing; 5.1.3 Chemical Interactions Between Abrasive and Oxide Surface; 5.2 Oxide CMP in Practice; 5.2.1 Polish Rate Results 5.2.2 Planarization Results5.2.3 CMP in Manufacturing; 5.2.4 Yield Issues; 5.3 Summary; References; 6 Tungsten and CMP Processes; 6.1 Inlaid Metal Patterning; 6.1.1 RIE Etch Back; 6.1.2 Metal CMP; 6.2 Tungsten CMP; 6.2.1 Surface Passivation Model for Tungsten CMP; 6.2.2 Tungsten CMP Processes; 6.3 Summary; References; 7 Copper CMP; 7.1 Proposed Model for Copper CMP; 7.2 Surface Layer Formation - Planarization; 7.2.1 Formation of Native Surface Films; 7.2.2 Formation of Nonnative Cu-BTA Surface Film; 7.3 Material Dissolution; 7.3.1 Removal of Abraded Material 7.3.2 Increasing Solubility with Complexing Agent7.3.3 Increasing Dissolution Rate with Oxidizing Agents; 7.3.4 Chemical Aspect of the Copper CMP Model; 7.4 Preston Equation; 7.4.1 Preston Coefficient; 7.4.2 Polish Rates; 7.4.3 Comparison of Kp Values; 7.5 Polish-Induced Stress; 7.6 Pattern Geometry Effects; 7.6.1 Dishing and Erosion in Cu/SiO2 System; 7.6.2 Optimization of Process to Minimize Dishing and Erosion; 7.6.3 Summary; References; 8 CMP of Other Materials and New CMP Applications; 8.1 The Front-End Applications in Silicon IC Fabrication 8.1.1 Polysilicon CMP for Deep Trench Capacitor Fabrication
Record Nr.	UNINA-9910144581703321

Pubbl/distr/stampa	Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2007
Descrizione fisica	1 online resource (510 p.)
Disciplina	621.381
Altri autori (Persone)	BaklanovMikhail GreenMartin MaexKaren
Collana	Wiley series in materials for electronic and optoelectronic applications
Soggetto topico	Dielectric films Microelectronics - Materials
ISBN	1-282-34620-2 9786612346200 0-470-01794-5 0-470-06541-9
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Nota di contenuto	Low and ultralow dielectric constant films prepared by plasma-enhanced chemical vapor deposition / A. Grill -- Spin-on dielectric materials / Geraud Dubois, Robert D. Miller, Willi Volksen -- Positron annihilation spectroscopy / David W. Gidley, Hua-Gen Peng, Richard Vallery -- Structure characterization of nanoporous interlevel dielectric thin films with x-ray and neutron radiation / Christopher L. Soles ... [et al.] -- Ellipsometric porosimetry / Mikhail R. Baklanov -- Mechanical and transport properties of low-k dielectrics / J. L. Plawsky ... [et al.] -- Integration of low-k dielectric films in damascene processes / R. J. O. M. Hoofman ... [et al.] -- ONO structures and oxynitrides in modern microelectronics : material science, characterization and application / Yakov Roizin, Vladimir Gritsenko -- Material engineering of high-k gate dielectrics / Akira Toriumi, Koji Kita -- Physical characterization of ultra-thin high-k dielectric / T. Conard, H. Bender, W. Vandervorst -- Electrical characterization of advanced gate dielectrics / Robin Degraeve ... [et al.] -- Integration issues of high-k gate dielectrics / Yasuo Nara -- Anisotropic conductive film (ACF) for advanced microelectronic interconnects / Yi Li, C. P. Wong.
Record Nr.	UNINA-9910143706103321