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Characterization of magnetron sputtered copper-nickel thin films and alloys / / by Eugene Zakar [and five others]
| Characterization of magnetron sputtered copper-nickel thin films and alloys / / by Eugene Zakar [and five others] |
| Autore | Zakar Eugene |
| Pubbl/distr/stampa | Adelphi, MD : , : US Army Research Laboratory, , 2016 |
| Descrizione fisica | 1 online resource (iv, 12 pages) : color illustrations |
| Collana | ARL-TR |
| Soggetto topico |
Magnetron sputtering
Thin films Metallic films |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910707714803321 |
Zakar Eugene
|
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| Adelphi, MD : , : US Army Research Laboratory, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
The chemistry of metal CVD / / edited by Toivo T. Kodas and Mark J. Hampden-Smith
| The chemistry of metal CVD / / edited by Toivo T. Kodas and Mark J. Hampden-Smith |
| Pubbl/distr/stampa | Weinheim, [Germany] : , : VCH, , 1994 |
| Descrizione fisica | 1 online resource (566 p.) |
| Disciplina |
546.3
621.3815 |
| Soggetto topico |
Electronic circuit design
Chemical vapor deposition Metallic films |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-84291-5
9786611842918 3-527-61585-7 3-527-61584-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
The Chemistry of Metal CVD; Contents; List of Contributors; Chemical Abbreviations; General Abbreviations; 1 Introduction; 1.1 Introduction; 1.2 Current Interconnect Schemes in Silicon Devices; 1.2.1 Metal-Silicon Contacts; 1.2.2 Diffusion Barrier Layers; 1.2.2.1 Sacrificial Diffusion Barriers; 1.2.2.2 Stuffed Diffusion Barriers; 1.2.2.3 Passive Diffusion Barriers; 1.2.2.4 Amorphous Diffusion Barriers; 1.2.3 Contact Layers; 1.2.3.1 Platinum Silicide (PtSi); 1.2.3.2 Titanium Silicide (TiSi2); 1.2.3.3 Cobalt Silicide (CoSi2); 1.2.3.4 Other Near Noble Silicides (Nisi, PdzSi, MoSi2)
1.2.4 Primary Interconnection1.2.4.1 Aluminum Metallization; 1.2.4.2 Tungsten Metallization; 1.2.4.3 Copper Metallization; 1.2.4.4 Gold Metallization; 1.3 Metallization Requirements for the Year 2001 in Silicon-Based Technologies; 1.3.1 Trends in Device and Process Architecture; 1.3.2 CVD of Titanium; 1.3.3 CVD of Metal Silicides; 1.3.4 CVD of Metal Nitrides; 1.3.5 CVD of Copper and Barrier Layers; 1.3.6 Other Metallizations; 1.4 Metal Deposition Techniques; 1.4.1 Physical Vapor Deposition by Evaporation; 1.4.2 Physical Vapor Deposition by Sputtering 1.4.2.1 Conventional Sputter Deposition Techniques1.4.2.2 Magnetron-Based Sputter Deposition; 1.4.3 Chemical Vapor Deposition; 1.5 Manufacturing Issues in CVD Processes; 1.6 Summary and Conclusions; Acknowledgments; References; 2 Chemical Vapor Deposition of Aluminum; 2.1 Applications of Aluminum Films; 2.1.1 Microelectronics; 2.1.2 Metallized Polymers; 2.1.2.1 Gas Diffusion Barriers; 2.1.2.2 Optical Properties; 2.1.3 Adhesion; 2.2 Comparison Between Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) of Aluminum; 2.3 Understanding the CVD Process; 2.3.1 Surface Diffusion 2.3.2 Transport Phenomena2.3.3 Gas-Phase Reactions; 2.3.4 Surface Reactivity; 2.3.5 Nucleation; 2.3.6 Summary of Aluminum Precursors; 2.4 CVD Using Triisobutylaluminum; 2.4.1 Early Developments; 2.4.2 Optimization of Aluminum CVD; 2.4.2.1 Morphology of Aluminum Deposits; 2.4.2.2 Alloys with Cu and Si; 2.4.2.3 Nucleation Promoters; 2.4.2.4 Aluminum Epitaxy on Si; 2.4.3 Surface Decomposition Mechanism of TIBA; 2.4.4 Patterning of Aluminum Films; 2.5 Deposition of Aluminum from Trimethylaluminum; 2.5.1 Thermal Activation of TMA; 2.5.2 Plasma-Assisted Aluminum Deposition Using TMA 2.5.3 Laser-Assisted Aluminum Deposition from TMA2.6 Deposition of Aluminum Films from Alane Precursors; 2.6.1 Surface Reaction Mechanism of TMAA; 2.6.2 Deposition in Cold-Wall Reactors Using TMAA; 2.6.3 Deposition in Hot-Wall Reactors Using TMAA; 2.6.4 Aluminum Deposition from TEAA; 2.6.5 Aluminum Deposition from DMEAA; 2.6.6 Selectivity of Deposition Using Alane Precursors; 2.6.7 Aluminum Deposition Using Aluminaborane Precursors; 2.6.8 Gas-Phase Aluminum Particle Formation From Amine Alanes; 2.7 Alternative Aluminum Alkyl Sources; 2.7.1 Triethylaluminum; 2.7.2 Dimethylaluminum Hydride 2.7.3 Diethylaluminum Chloride |
| Record Nr. | UNINA-9910144717903321 |
| Weinheim, [Germany] : , : VCH, , 1994 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
The chemistry of metal CVD / / edited by Toivo T. Kodas and Mark J. Hampden-Smith
| The chemistry of metal CVD / / edited by Toivo T. Kodas and Mark J. Hampden-Smith |
| Pubbl/distr/stampa | Weinheim, [Germany] : , : VCH, , 1994 |
| Descrizione fisica | 1 online resource (566 p.) |
| Disciplina |
546.3
621.3815 |
| Soggetto topico |
Electronic circuit design
Chemical vapor deposition Metallic films |
| ISBN |
1-281-84291-5
9786611842918 3-527-61585-7 3-527-61584-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
The Chemistry of Metal CVD; Contents; List of Contributors; Chemical Abbreviations; General Abbreviations; 1 Introduction; 1.1 Introduction; 1.2 Current Interconnect Schemes in Silicon Devices; 1.2.1 Metal-Silicon Contacts; 1.2.2 Diffusion Barrier Layers; 1.2.2.1 Sacrificial Diffusion Barriers; 1.2.2.2 Stuffed Diffusion Barriers; 1.2.2.3 Passive Diffusion Barriers; 1.2.2.4 Amorphous Diffusion Barriers; 1.2.3 Contact Layers; 1.2.3.1 Platinum Silicide (PtSi); 1.2.3.2 Titanium Silicide (TiSi2); 1.2.3.3 Cobalt Silicide (CoSi2); 1.2.3.4 Other Near Noble Silicides (Nisi, PdzSi, MoSi2)
1.2.4 Primary Interconnection1.2.4.1 Aluminum Metallization; 1.2.4.2 Tungsten Metallization; 1.2.4.3 Copper Metallization; 1.2.4.4 Gold Metallization; 1.3 Metallization Requirements for the Year 2001 in Silicon-Based Technologies; 1.3.1 Trends in Device and Process Architecture; 1.3.2 CVD of Titanium; 1.3.3 CVD of Metal Silicides; 1.3.4 CVD of Metal Nitrides; 1.3.5 CVD of Copper and Barrier Layers; 1.3.6 Other Metallizations; 1.4 Metal Deposition Techniques; 1.4.1 Physical Vapor Deposition by Evaporation; 1.4.2 Physical Vapor Deposition by Sputtering 1.4.2.1 Conventional Sputter Deposition Techniques1.4.2.2 Magnetron-Based Sputter Deposition; 1.4.3 Chemical Vapor Deposition; 1.5 Manufacturing Issues in CVD Processes; 1.6 Summary and Conclusions; Acknowledgments; References; 2 Chemical Vapor Deposition of Aluminum; 2.1 Applications of Aluminum Films; 2.1.1 Microelectronics; 2.1.2 Metallized Polymers; 2.1.2.1 Gas Diffusion Barriers; 2.1.2.2 Optical Properties; 2.1.3 Adhesion; 2.2 Comparison Between Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) of Aluminum; 2.3 Understanding the CVD Process; 2.3.1 Surface Diffusion 2.3.2 Transport Phenomena2.3.3 Gas-Phase Reactions; 2.3.4 Surface Reactivity; 2.3.5 Nucleation; 2.3.6 Summary of Aluminum Precursors; 2.4 CVD Using Triisobutylaluminum; 2.4.1 Early Developments; 2.4.2 Optimization of Aluminum CVD; 2.4.2.1 Morphology of Aluminum Deposits; 2.4.2.2 Alloys with Cu and Si; 2.4.2.3 Nucleation Promoters; 2.4.2.4 Aluminum Epitaxy on Si; 2.4.3 Surface Decomposition Mechanism of TIBA; 2.4.4 Patterning of Aluminum Films; 2.5 Deposition of Aluminum from Trimethylaluminum; 2.5.1 Thermal Activation of TMA; 2.5.2 Plasma-Assisted Aluminum Deposition Using TMA 2.5.3 Laser-Assisted Aluminum Deposition from TMA2.6 Deposition of Aluminum Films from Alane Precursors; 2.6.1 Surface Reaction Mechanism of TMAA; 2.6.2 Deposition in Cold-Wall Reactors Using TMAA; 2.6.3 Deposition in Hot-Wall Reactors Using TMAA; 2.6.4 Aluminum Deposition from TEAA; 2.6.5 Aluminum Deposition from DMEAA; 2.6.6 Selectivity of Deposition Using Alane Precursors; 2.6.7 Aluminum Deposition Using Aluminaborane Precursors; 2.6.8 Gas-Phase Aluminum Particle Formation From Amine Alanes; 2.7 Alternative Aluminum Alkyl Sources; 2.7.1 Triethylaluminum; 2.7.2 Dimethylaluminum Hydride 2.7.3 Diethylaluminum Chloride |
| Record Nr. | UNISA-996199395603316 |
| Weinheim, [Germany] : , : VCH, , 1994 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
The chemistry of metal CVD / / edited by Toivo T. Kodas and Mark J. Hampden-Smith
| The chemistry of metal CVD / / edited by Toivo T. Kodas and Mark J. Hampden-Smith |
| Pubbl/distr/stampa | Weinheim, [Germany] : , : VCH, , 1994 |
| Descrizione fisica | 1 online resource (566 p.) |
| Disciplina |
546.3
621.3815 |
| Soggetto topico |
Electronic circuit design
Chemical vapor deposition Metallic films |
| ISBN |
1-281-84291-5
9786611842918 3-527-61585-7 3-527-61584-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
The Chemistry of Metal CVD; Contents; List of Contributors; Chemical Abbreviations; General Abbreviations; 1 Introduction; 1.1 Introduction; 1.2 Current Interconnect Schemes in Silicon Devices; 1.2.1 Metal-Silicon Contacts; 1.2.2 Diffusion Barrier Layers; 1.2.2.1 Sacrificial Diffusion Barriers; 1.2.2.2 Stuffed Diffusion Barriers; 1.2.2.3 Passive Diffusion Barriers; 1.2.2.4 Amorphous Diffusion Barriers; 1.2.3 Contact Layers; 1.2.3.1 Platinum Silicide (PtSi); 1.2.3.2 Titanium Silicide (TiSi2); 1.2.3.3 Cobalt Silicide (CoSi2); 1.2.3.4 Other Near Noble Silicides (Nisi, PdzSi, MoSi2)
1.2.4 Primary Interconnection1.2.4.1 Aluminum Metallization; 1.2.4.2 Tungsten Metallization; 1.2.4.3 Copper Metallization; 1.2.4.4 Gold Metallization; 1.3 Metallization Requirements for the Year 2001 in Silicon-Based Technologies; 1.3.1 Trends in Device and Process Architecture; 1.3.2 CVD of Titanium; 1.3.3 CVD of Metal Silicides; 1.3.4 CVD of Metal Nitrides; 1.3.5 CVD of Copper and Barrier Layers; 1.3.6 Other Metallizations; 1.4 Metal Deposition Techniques; 1.4.1 Physical Vapor Deposition by Evaporation; 1.4.2 Physical Vapor Deposition by Sputtering 1.4.2.1 Conventional Sputter Deposition Techniques1.4.2.2 Magnetron-Based Sputter Deposition; 1.4.3 Chemical Vapor Deposition; 1.5 Manufacturing Issues in CVD Processes; 1.6 Summary and Conclusions; Acknowledgments; References; 2 Chemical Vapor Deposition of Aluminum; 2.1 Applications of Aluminum Films; 2.1.1 Microelectronics; 2.1.2 Metallized Polymers; 2.1.2.1 Gas Diffusion Barriers; 2.1.2.2 Optical Properties; 2.1.3 Adhesion; 2.2 Comparison Between Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) of Aluminum; 2.3 Understanding the CVD Process; 2.3.1 Surface Diffusion 2.3.2 Transport Phenomena2.3.3 Gas-Phase Reactions; 2.3.4 Surface Reactivity; 2.3.5 Nucleation; 2.3.6 Summary of Aluminum Precursors; 2.4 CVD Using Triisobutylaluminum; 2.4.1 Early Developments; 2.4.2 Optimization of Aluminum CVD; 2.4.2.1 Morphology of Aluminum Deposits; 2.4.2.2 Alloys with Cu and Si; 2.4.2.3 Nucleation Promoters; 2.4.2.4 Aluminum Epitaxy on Si; 2.4.3 Surface Decomposition Mechanism of TIBA; 2.4.4 Patterning of Aluminum Films; 2.5 Deposition of Aluminum from Trimethylaluminum; 2.5.1 Thermal Activation of TMA; 2.5.2 Plasma-Assisted Aluminum Deposition Using TMA 2.5.3 Laser-Assisted Aluminum Deposition from TMA2.6 Deposition of Aluminum Films from Alane Precursors; 2.6.1 Surface Reaction Mechanism of TMAA; 2.6.2 Deposition in Cold-Wall Reactors Using TMAA; 2.6.3 Deposition in Hot-Wall Reactors Using TMAA; 2.6.4 Aluminum Deposition from TEAA; 2.6.5 Aluminum Deposition from DMEAA; 2.6.6 Selectivity of Deposition Using Alane Precursors; 2.6.7 Aluminum Deposition Using Aluminaborane Precursors; 2.6.8 Gas-Phase Aluminum Particle Formation From Amine Alanes; 2.7 Alternative Aluminum Alkyl Sources; 2.7.1 Triethylaluminum; 2.7.2 Dimethylaluminum Hydride 2.7.3 Diethylaluminum Chloride |
| Record Nr. | UNINA-9910830567303321 |
| Weinheim, [Germany] : , : VCH, , 1994 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Metal based thin films for electronics [[electronic resource] /] / Klaus Wetzig, Claus M. Schneider (eds.)
| Metal based thin films for electronics [[electronic resource] /] / Klaus Wetzig, Claus M. Schneider (eds.) |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2003 |
| Descrizione fisica | 1 online resource (390 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
WetzigKlaus
SchneiderClaus M (Claus Michael) |
| Soggetto topico |
Thin films
Metallic films |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-52109-0
9786610521098 3-527-60647-5 3-527-60253-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Metal Based Thin Films for Electronics; List of Contributors; Contents; 1 Introduction; 2 Thin Film Systems: Basic Aspects; 2.1 Interconnects for Microelectronics; 2.1.1 Introduction; 2.1.2 Metallization Layers; 2.1.3 Materials Science of Metallic Interconnects; 2.1.4 Function of Barrier and Nucleation Layers and Materials Selection; 2.2 Metallization Structures in Acoustoelectronics; 2.2.1 Introduction; 2.2.2 Fundamentals of Surface Acoustic Waves; 2.2.3 Interdigital Transducers (IDTs); 2.2.4 Reflector Gratings; 2.2.5 Waveguides, Energy Trapping; 2.2.6 Multistrip Couplers
2.3 Silicide Layers for Electronics2.3.1 Introduction; 2.3.2 The Basic Chemical and Physical Properties; 2.3.3 Preparation of Silicides; 2.3.4 Silicides with Metallic Conductivity; 2.3.5 Semiconducting Silicides; 2.3.6 Heterogeneously Disordered Silicide Films; 2.4 Complex Layered Systems for Magnetoelectronics; 2.4.1 Introduction; 2.4.2 Magnetism: A Primer; 2.4.3 Magnetic Coupling Phenomena; 2.4.4 Electric Transport in Layered Magnetic Systems; 2.4.5 Functional Thin Film Systems; 2.5 Multilayer and Single-Surface Reflectors for X-Ray Optics; 2.5.1 Introduction 2.5.2 Refraction and Reflection at Single Boundaries2.5.3 Bragg Reflection at 1D Lattice Systems; 2.5.4 Multilayer Preparation; References; 3 Thin Film Preparation and Characterization Techniques; 3.1 Thin Film Preparation Methods; 3.1.1 Introduction; 3.1.2 Physical Vapor Deposition; 3.1.3 Chemical Vapor Deposition; 3.1.4 Non-Vacuum Based Deposition; 3.1.5 Outlook; 3.2 Electron Microscopy and Diffraction; 3.2.1 Transmission Electron Microscopy (TEM) - Imaging; 3.2.2 TEM - Selected Area Electron Diffraction; 3.2.3 In situ-SEM Methods; 3.2.4 Electron Backscatter Diffraction 3.3 X-Ray Scattering Techniques3.3.1 Wide Angle Diffraction; 3.3.2 Reflectometry; 3.3.3 Soft X-Rays and Magnetic Scattering; 3.4 Spectroscopic Techniques; 3.4.1 Element Distribution Analysis; 3.4.2 Element Depth Profile Analysis; 3.5 Stress Measurement Techniques; 3.5.1 Stress and Strain; 3.5.2 Substrate Curvature; 3.5.3 Measurement Techniques; References; 4 Challenges for Thin Film Systems Characterization and Optimization; 4.1 Electromigration in Metallization Layers; 4.1.1 Fundamentals; 4.1.2 Methods for Quantitative Damage Analysis; 4.1.3 Al Interconnects; 4.1.4 Cu Interconnects 4.2 Barrier and Nucleation Layers for Interconnects4.2.1 Introduction; 4.2.2 PVD Barrier Layers for Copper Interconnects; 4.2.3 Barrier/Seed Microstructure and Step Coverage; 4.2.4 New Barrier/Seed Concepts using CVD and ALD; 4.2.5 Atomic Layer Deposition (ALD); 4.3 Acoustomigration in Surface Acoustic Waves Structures; 4.3.1 General Remarks; 4.3.2 Acoustomigration Mechanism; 4.3.3 Metallization Concepts for Power SAW Structures; 4.3.4 Experimental Set-up; 4.3.5 Acoustomigration Experiments; 4.4 Thermal Stability of Magnetoresistive Layer Stacks 4.4.1 Metallic Multilayers as GMR Model Systems |
| Record Nr. | UNINA-9910146230803321 |
| Weinheim, : Wiley-VCH, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Metal based thin films for electronics [[electronic resource] /] / Klaus Wetzig, Claus M. Schneider (eds.)
| Metal based thin films for electronics [[electronic resource] /] / Klaus Wetzig, Claus M. Schneider (eds.) |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2003 |
| Descrizione fisica | 1 online resource (390 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
WetzigKlaus
SchneiderClaus M (Claus Michael) |
| Soggetto topico |
Thin films
Metallic films |
| ISBN |
1-280-52109-0
9786610521098 3-527-60647-5 3-527-60253-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Metal Based Thin Films for Electronics; List of Contributors; Contents; 1 Introduction; 2 Thin Film Systems: Basic Aspects; 2.1 Interconnects for Microelectronics; 2.1.1 Introduction; 2.1.2 Metallization Layers; 2.1.3 Materials Science of Metallic Interconnects; 2.1.4 Function of Barrier and Nucleation Layers and Materials Selection; 2.2 Metallization Structures in Acoustoelectronics; 2.2.1 Introduction; 2.2.2 Fundamentals of Surface Acoustic Waves; 2.2.3 Interdigital Transducers (IDTs); 2.2.4 Reflector Gratings; 2.2.5 Waveguides, Energy Trapping; 2.2.6 Multistrip Couplers
2.3 Silicide Layers for Electronics2.3.1 Introduction; 2.3.2 The Basic Chemical and Physical Properties; 2.3.3 Preparation of Silicides; 2.3.4 Silicides with Metallic Conductivity; 2.3.5 Semiconducting Silicides; 2.3.6 Heterogeneously Disordered Silicide Films; 2.4 Complex Layered Systems for Magnetoelectronics; 2.4.1 Introduction; 2.4.2 Magnetism: A Primer; 2.4.3 Magnetic Coupling Phenomena; 2.4.4 Electric Transport in Layered Magnetic Systems; 2.4.5 Functional Thin Film Systems; 2.5 Multilayer and Single-Surface Reflectors for X-Ray Optics; 2.5.1 Introduction 2.5.2 Refraction and Reflection at Single Boundaries2.5.3 Bragg Reflection at 1D Lattice Systems; 2.5.4 Multilayer Preparation; References; 3 Thin Film Preparation and Characterization Techniques; 3.1 Thin Film Preparation Methods; 3.1.1 Introduction; 3.1.2 Physical Vapor Deposition; 3.1.3 Chemical Vapor Deposition; 3.1.4 Non-Vacuum Based Deposition; 3.1.5 Outlook; 3.2 Electron Microscopy and Diffraction; 3.2.1 Transmission Electron Microscopy (TEM) - Imaging; 3.2.2 TEM - Selected Area Electron Diffraction; 3.2.3 In situ-SEM Methods; 3.2.4 Electron Backscatter Diffraction 3.3 X-Ray Scattering Techniques3.3.1 Wide Angle Diffraction; 3.3.2 Reflectometry; 3.3.3 Soft X-Rays and Magnetic Scattering; 3.4 Spectroscopic Techniques; 3.4.1 Element Distribution Analysis; 3.4.2 Element Depth Profile Analysis; 3.5 Stress Measurement Techniques; 3.5.1 Stress and Strain; 3.5.2 Substrate Curvature; 3.5.3 Measurement Techniques; References; 4 Challenges for Thin Film Systems Characterization and Optimization; 4.1 Electromigration in Metallization Layers; 4.1.1 Fundamentals; 4.1.2 Methods for Quantitative Damage Analysis; 4.1.3 Al Interconnects; 4.1.4 Cu Interconnects 4.2 Barrier and Nucleation Layers for Interconnects4.2.1 Introduction; 4.2.2 PVD Barrier Layers for Copper Interconnects; 4.2.3 Barrier/Seed Microstructure and Step Coverage; 4.2.4 New Barrier/Seed Concepts using CVD and ALD; 4.2.5 Atomic Layer Deposition (ALD); 4.3 Acoustomigration in Surface Acoustic Waves Structures; 4.3.1 General Remarks; 4.3.2 Acoustomigration Mechanism; 4.3.3 Metallization Concepts for Power SAW Structures; 4.3.4 Experimental Set-up; 4.3.5 Acoustomigration Experiments; 4.4 Thermal Stability of Magnetoresistive Layer Stacks 4.4.1 Metallic Multilayers as GMR Model Systems |
| Record Nr. | UNINA-9910830309903321 |
| Weinheim, : Wiley-VCH, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Metal based thin films for electronics / / Klaus Wetzig, Claus M. Schneider (eds.)
| Metal based thin films for electronics / / Klaus Wetzig, Claus M. Schneider (eds.) |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2003 |
| Descrizione fisica | 1 online resource (390 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
WetzigKlaus
SchneiderClaus M (Claus Michael) |
| Soggetto topico |
Thin films
Metallic films |
| ISBN |
1-280-52109-0
9786610521098 3-527-60647-5 3-527-60253-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Metal Based Thin Films for Electronics; List of Contributors; Contents; 1 Introduction; 2 Thin Film Systems: Basic Aspects; 2.1 Interconnects for Microelectronics; 2.1.1 Introduction; 2.1.2 Metallization Layers; 2.1.3 Materials Science of Metallic Interconnects; 2.1.4 Function of Barrier and Nucleation Layers and Materials Selection; 2.2 Metallization Structures in Acoustoelectronics; 2.2.1 Introduction; 2.2.2 Fundamentals of Surface Acoustic Waves; 2.2.3 Interdigital Transducers (IDTs); 2.2.4 Reflector Gratings; 2.2.5 Waveguides, Energy Trapping; 2.2.6 Multistrip Couplers
2.3 Silicide Layers for Electronics2.3.1 Introduction; 2.3.2 The Basic Chemical and Physical Properties; 2.3.3 Preparation of Silicides; 2.3.4 Silicides with Metallic Conductivity; 2.3.5 Semiconducting Silicides; 2.3.6 Heterogeneously Disordered Silicide Films; 2.4 Complex Layered Systems for Magnetoelectronics; 2.4.1 Introduction; 2.4.2 Magnetism: A Primer; 2.4.3 Magnetic Coupling Phenomena; 2.4.4 Electric Transport in Layered Magnetic Systems; 2.4.5 Functional Thin Film Systems; 2.5 Multilayer and Single-Surface Reflectors for X-Ray Optics; 2.5.1 Introduction 2.5.2 Refraction and Reflection at Single Boundaries2.5.3 Bragg Reflection at 1D Lattice Systems; 2.5.4 Multilayer Preparation; References; 3 Thin Film Preparation and Characterization Techniques; 3.1 Thin Film Preparation Methods; 3.1.1 Introduction; 3.1.2 Physical Vapor Deposition; 3.1.3 Chemical Vapor Deposition; 3.1.4 Non-Vacuum Based Deposition; 3.1.5 Outlook; 3.2 Electron Microscopy and Diffraction; 3.2.1 Transmission Electron Microscopy (TEM) - Imaging; 3.2.2 TEM - Selected Area Electron Diffraction; 3.2.3 In situ-SEM Methods; 3.2.4 Electron Backscatter Diffraction 3.3 X-Ray Scattering Techniques3.3.1 Wide Angle Diffraction; 3.3.2 Reflectometry; 3.3.3 Soft X-Rays and Magnetic Scattering; 3.4 Spectroscopic Techniques; 3.4.1 Element Distribution Analysis; 3.4.2 Element Depth Profile Analysis; 3.5 Stress Measurement Techniques; 3.5.1 Stress and Strain; 3.5.2 Substrate Curvature; 3.5.3 Measurement Techniques; References; 4 Challenges for Thin Film Systems Characterization and Optimization; 4.1 Electromigration in Metallization Layers; 4.1.1 Fundamentals; 4.1.2 Methods for Quantitative Damage Analysis; 4.1.3 Al Interconnects; 4.1.4 Cu Interconnects 4.2 Barrier and Nucleation Layers for Interconnects4.2.1 Introduction; 4.2.2 PVD Barrier Layers for Copper Interconnects; 4.2.3 Barrier/Seed Microstructure and Step Coverage; 4.2.4 New Barrier/Seed Concepts using CVD and ALD; 4.2.5 Atomic Layer Deposition (ALD); 4.3 Acoustomigration in Surface Acoustic Waves Structures; 4.3.1 General Remarks; 4.3.2 Acoustomigration Mechanism; 4.3.3 Metallization Concepts for Power SAW Structures; 4.3.4 Experimental Set-up; 4.3.5 Acoustomigration Experiments; 4.4 Thermal Stability of Magnetoresistive Layer Stacks 4.4.1 Metallic Multilayers as GMR Model Systems |
| Record Nr. | UNINA-9910876805303321 |
| Weinheim, : Wiley-VCH, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Polymer-film coating of magnesium for paraboloidal mirrors / / by Thaddeus S. Mroz and Robert B. King
| Polymer-film coating of magnesium for paraboloidal mirrors / / by Thaddeus S. Mroz and Robert B. King |
| Autore | Mroz Thaddeus S. |
| Pubbl/distr/stampa | Washington, D.C. : , : National Aeronautics and Space Administration, , August 1968 |
| Descrizione fisica | 1 online resource (ii, 13 pages) : illustrations |
| Collana | NASA technical note |
| Soggetto topico |
Magnesium
Coatings Metallic films |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910715010903321 |
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Mroz Thaddeus S.
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| Washington, D.C. : , : National Aeronautics and Space Administration, , August 1968 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Structure and electronic properties of ultrathin in films on Si(111) / / Shigemi Terakawa
| Structure and electronic properties of ultrathin in films on Si(111) / / Shigemi Terakawa |
| Autore | Terakawa Shigemi |
| Pubbl/distr/stampa | Singapore : , : Springer, , [2022] |
| Descrizione fisica | 1 online resource (83 pages) |
| Disciplina | 621.38171 |
| Collana | Springer theses |
| Soggetto topico |
Metallic films
Semiconductor films |
| ISBN |
9789811968723
9789811968716 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Supervisor's Foreword -- Abstract -- Acknowledgements -- Contents -- 1 Introduction -- 1.1 Ultrathin Metal Films -- 1.2 Thin Indium Films on Si(111) -- 1.3 In/Si(111) Surface Superstructures -- 1.4 Bonding Between Metal Layers and Substrates -- 1.5 Outline of the Thesis -- References -- 2 Experimental Methods -- 2.1 Low-Energy Electron Diffraction (LEED) -- 2.1.1 Kinematic Theory -- 2.1.2 Dynamical Theory -- 2.1.3 Apparatus -- 2.2 Scanning Tunneling Microscopy (STM) -- 2.2.1 Theory and Apparatus -- 2.3 Angle-Resolved Photoelectron Spectroscopy (ARPES) -- 2.3.1 Theory -- 2.3.2 Apparatus -- 2.4 Four-Point-Probe (4PP) Conductivity Measurements -- 2.4.1 Theory and Apparatus -- 2.5 Experiments -- 2.5.1 Chamber 1 (ARPES, LEED) -- 2.5.2 Chamber 2 (ARPES, LEED) -- 2.5.3 Chamber 3 (STM) -- 2.5.4 Chamber 4 (4PP Conductivity Measurements, LEED) -- 2.5.5 Chamber 5 (LEED) -- 2.5.6 Samples -- References -- 3 Structure and Electronic Properties of In Single-Layer Metal on Si(111) -- 3.1 Introduction -- 3.2 Preparation of the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Hex and left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Striped Phases -- 3.3 The Atomic Structure of the In/Si(111) ``left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )''-Hex Phase -- 3.3.1 LEED and STM Observations -- 3.3.2 Structure Model -- 3.3.3 First-Principles Calculation -- 3.4 Electronic Structure and Phase Transition of the Indium Monolayer on Si(111) -- 3.4.1 Electronic Structure of the In/Si(111) Hex Phase -- 3.4.2 Phase Transition of the In/Si(111) Hex Phase -- 3.5 Summary -- References -- 4 Structure and Electronic Properties of Ultrathin (In, Mg) Films on Si(111) -- 4.1 Introduction.
4.2 Structure Change by Mg Deposition onto the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Rect Phase -- 4.2.1 LEED and STM Observations -- 4.2.2 Structure Determination by First-Principles Calculation -- 4.3 The Electronic Structure of the (In, Mg)/Si(111) left parenthesis StartRoot 3 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt3 timessqrt3 ) Phase -- 4.3.1 ARPES Experiments -- 4.3.2 Band Calculation -- 4.4 Summary -- References -- 5 Conclusions -- Appendix Curriculum Vitae. |
| Record Nr. | UNINA-9910629294203321 |
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Terakawa Shigemi
|
||
| Singapore : , : Springer, , [2022] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Structure and electronic properties of ultrathin in films on Si(111) / / Shigemi Terakawa
| Structure and electronic properties of ultrathin in films on Si(111) / / Shigemi Terakawa |
| Autore | Terakawa Shigemi |
| Pubbl/distr/stampa | Singapore : , : Springer, , [2022] |
| Descrizione fisica | 1 online resource (83 pages) |
| Disciplina | 621.38171 |
| Collana | Springer theses |
| Soggetto topico |
Metallic films
Semiconductor films |
| ISBN |
9789811968723
9789811968716 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Supervisor's Foreword -- Abstract -- Acknowledgements -- Contents -- 1 Introduction -- 1.1 Ultrathin Metal Films -- 1.2 Thin Indium Films on Si(111) -- 1.3 In/Si(111) Surface Superstructures -- 1.4 Bonding Between Metal Layers and Substrates -- 1.5 Outline of the Thesis -- References -- 2 Experimental Methods -- 2.1 Low-Energy Electron Diffraction (LEED) -- 2.1.1 Kinematic Theory -- 2.1.2 Dynamical Theory -- 2.1.3 Apparatus -- 2.2 Scanning Tunneling Microscopy (STM) -- 2.2.1 Theory and Apparatus -- 2.3 Angle-Resolved Photoelectron Spectroscopy (ARPES) -- 2.3.1 Theory -- 2.3.2 Apparatus -- 2.4 Four-Point-Probe (4PP) Conductivity Measurements -- 2.4.1 Theory and Apparatus -- 2.5 Experiments -- 2.5.1 Chamber 1 (ARPES, LEED) -- 2.5.2 Chamber 2 (ARPES, LEED) -- 2.5.3 Chamber 3 (STM) -- 2.5.4 Chamber 4 (4PP Conductivity Measurements, LEED) -- 2.5.5 Chamber 5 (LEED) -- 2.5.6 Samples -- References -- 3 Structure and Electronic Properties of In Single-Layer Metal on Si(111) -- 3.1 Introduction -- 3.2 Preparation of the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Hex and left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Striped Phases -- 3.3 The Atomic Structure of the In/Si(111) ``left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )''-Hex Phase -- 3.3.1 LEED and STM Observations -- 3.3.2 Structure Model -- 3.3.3 First-Principles Calculation -- 3.4 Electronic Structure and Phase Transition of the Indium Monolayer on Si(111) -- 3.4.1 Electronic Structure of the In/Si(111) Hex Phase -- 3.4.2 Phase Transition of the In/Si(111) Hex Phase -- 3.5 Summary -- References -- 4 Structure and Electronic Properties of Ultrathin (In, Mg) Films on Si(111) -- 4.1 Introduction.
4.2 Structure Change by Mg Deposition onto the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Rect Phase -- 4.2.1 LEED and STM Observations -- 4.2.2 Structure Determination by First-Principles Calculation -- 4.3 The Electronic Structure of the (In, Mg)/Si(111) left parenthesis StartRoot 3 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt3 timessqrt3 ) Phase -- 4.3.1 ARPES Experiments -- 4.3.2 Band Calculation -- 4.4 Summary -- References -- 5 Conclusions -- Appendix Curriculum Vitae. |
| Record Nr. | UNISA-996499863903316 |
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Terakawa Shigemi
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| Singapore : , : Springer, , [2022] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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