Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Oxide reliability [[electronic resource] ] : a summary of silicon oxide wearout, breakdown, and reliability / / editor, D.J. Dumin
| Oxide reliability [[electronic resource] ] : a summary of silicon oxide wearout, breakdown, and reliability / / editor, D.J. Dumin |
| Pubbl/distr/stampa | [River Edge, NJ], : World Scientific, c2002 |
| Descrizione fisica | 1 online resource (281 p.) |
| Disciplina | 621.39/732 |
| Altri autori (Persone) | DuminD. J |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Metal oxide semiconductors - Reliability
Silicon oxide - Deterioration |
| Soggetto genere / forma | Electronic books. |
| ISBN | 981-277-806-3 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS ; Foreword ; Oxide Wearout, Breakdown, and Reliability; 1. Introduction ; 2. Oxide Breakdown ; 3. Oxide Leakage Currents ; 4. Oxide Trap Generation ; 5. Statistics of Wearout and Breakdown ; 6. Reliability ; 7. Summary ; Reliability of Flash Nonvolatile Memories ; 1. Introduction
2. Implications to Scaling and Reliability 3. Dielectric Damage Caused by Program/Erase Cycling ; 4. Overerase Effects ; 5. Stress Induced Leakage Current and Post-Cycling Data Retention ; 6 Other Failure Mechanisms ; 7. Conclusions ; Physics and Chemistry of Intrinsic Time-Dependent Dielectric Breakdown in SiO2 Dielectrics 1. Introduction 2. Time-Dependent Dielectric Breakdown ; 3. Chemistry and Physics of Amorphous SiO2 ; 4. Molecular Models for Dielectric Degradation ; 5. Electron and Hole Injection into SiO2 ; 6. Role of Hole Capture in TDDB ; 7. Complementary Model for TDDB 8. Conditions Under Which the E and 1/E Models are Valid 9. Extention of the Complementary Model to Hyper-Thin SiO2; 10. Summary ; Breakdown Modes and Breakdown Statistics of Ultrathin SiO2 Gate Oxides; 1. Introduction ; 2. Breakdown related to the generation of oxide defects ; 3. Modeling the Breakdown Statistics 4. Breakdown modes: Soft breakdown and Hard Breakdown 5. Breakdown effectiveness, energy dissipation and device failure; 6. Conclusions ; MOSFET Gate Oxide Reliability: Anode Hole Injection Model and Its Applications ; 1. Introduction ; 2. Development of the Anode Hole Injection Model ; 3. Recent Developments 4. Gross-Defect Related Breakdown and Burn-in Model |
| Record Nr. | UNINA-9910458440603321 |
| [River Edge, NJ], : World Scientific, c2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Oxide reliability [[electronic resource] ] : a summary of silicon oxide wearout, breakdown, and reliability / / editor, D.J. Dumin
| Oxide reliability [[electronic resource] ] : a summary of silicon oxide wearout, breakdown, and reliability / / editor, D.J. Dumin |
| Pubbl/distr/stampa | [River Edge, NJ], : World Scientific, c2002 |
| Descrizione fisica | 1 online resource (281 p.) |
| Disciplina | 621.39/732 |
| Altri autori (Persone) | DuminD. J |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Metal oxide semiconductors - Reliability
Silicon oxide - Deterioration |
| ISBN | 981-277-806-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS ; Foreword ; Oxide Wearout, Breakdown, and Reliability; 1. Introduction ; 2. Oxide Breakdown ; 3. Oxide Leakage Currents ; 4. Oxide Trap Generation ; 5. Statistics of Wearout and Breakdown ; 6. Reliability ; 7. Summary ; Reliability of Flash Nonvolatile Memories ; 1. Introduction
2. Implications to Scaling and Reliability 3. Dielectric Damage Caused by Program/Erase Cycling ; 4. Overerase Effects ; 5. Stress Induced Leakage Current and Post-Cycling Data Retention ; 6 Other Failure Mechanisms ; 7. Conclusions ; Physics and Chemistry of Intrinsic Time-Dependent Dielectric Breakdown in SiO2 Dielectrics 1. Introduction 2. Time-Dependent Dielectric Breakdown ; 3. Chemistry and Physics of Amorphous SiO2 ; 4. Molecular Models for Dielectric Degradation ; 5. Electron and Hole Injection into SiO2 ; 6. Role of Hole Capture in TDDB ; 7. Complementary Model for TDDB 8. Conditions Under Which the E and 1/E Models are Valid 9. Extention of the Complementary Model to Hyper-Thin SiO2; 10. Summary ; Breakdown Modes and Breakdown Statistics of Ultrathin SiO2 Gate Oxides; 1. Introduction ; 2. Breakdown related to the generation of oxide defects ; 3. Modeling the Breakdown Statistics 4. Breakdown modes: Soft breakdown and Hard Breakdown 5. Breakdown effectiveness, energy dissipation and device failure; 6. Conclusions ; MOSFET Gate Oxide Reliability: Anode Hole Injection Model and Its Applications ; 1. Introduction ; 2. Development of the Anode Hole Injection Model ; 3. Recent Developments 4. Gross-Defect Related Breakdown and Burn-in Model |
| Record Nr. | UNINA-9910784783703321 |
| [River Edge, NJ], : World Scientific, c2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Oxide reliability : a summary of silicon oxide wearout, breakdown, and reliability / / editor, D.J. Dumin
| Oxide reliability : a summary of silicon oxide wearout, breakdown, and reliability / / editor, D.J. Dumin |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | [River Edge, NJ], : World Scientific, c2002 |
| Descrizione fisica | 1 online resource (281 p.) |
| Disciplina | 621.39/732 |
| Altri autori (Persone) | DuminD. J |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Metal oxide semiconductors - Reliability
Silicon oxide - Deterioration |
| ISBN | 981-277-806-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS ; Foreword ; Oxide Wearout, Breakdown, and Reliability; 1. Introduction ; 2. Oxide Breakdown ; 3. Oxide Leakage Currents ; 4. Oxide Trap Generation ; 5. Statistics of Wearout and Breakdown ; 6. Reliability ; 7. Summary ; Reliability of Flash Nonvolatile Memories ; 1. Introduction
2. Implications to Scaling and Reliability 3. Dielectric Damage Caused by Program/Erase Cycling ; 4. Overerase Effects ; 5. Stress Induced Leakage Current and Post-Cycling Data Retention ; 6 Other Failure Mechanisms ; 7. Conclusions ; Physics and Chemistry of Intrinsic Time-Dependent Dielectric Breakdown in SiO2 Dielectrics 1. Introduction 2. Time-Dependent Dielectric Breakdown ; 3. Chemistry and Physics of Amorphous SiO2 ; 4. Molecular Models for Dielectric Degradation ; 5. Electron and Hole Injection into SiO2 ; 6. Role of Hole Capture in TDDB ; 7. Complementary Model for TDDB 8. Conditions Under Which the E and 1/E Models are Valid 9. Extention of the Complementary Model to Hyper-Thin SiO2; 10. Summary ; Breakdown Modes and Breakdown Statistics of Ultrathin SiO2 Gate Oxides; 1. Introduction ; 2. Breakdown related to the generation of oxide defects ; 3. Modeling the Breakdown Statistics 4. Breakdown modes: Soft breakdown and Hard Breakdown 5. Breakdown effectiveness, energy dissipation and device failure; 6. Conclusions ; MOSFET Gate Oxide Reliability: Anode Hole Injection Model and Its Applications ; 1. Introduction ; 2. Development of the Anode Hole Injection Model ; 3. Recent Developments 4. Gross-Defect Related Breakdown and Burn-in Model |
| Record Nr. | UNINA-9910810147603321 |
| [River Edge, NJ], : World Scientific, c2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
