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Charge-based MOS transistor modeling [[electronic resource] ] : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz
| Charge-based MOS transistor modeling [[electronic resource] ] : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz |
| Autore | Enz Christian |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006 |
| Descrizione fisica | 1 online resource (329 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | VittozEric A. <1938-> |
| Soggetto topico |
Metal oxide semiconductors - Mathematical models
Metal oxide semiconductor field-effect transistors - Mathematical models |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-64993-3
9786610649938 0-470-85546-0 0-470-85545-2 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Charge-based MOS Transistor Modeling; Contents; Foreword; Preface; List of Symbols; 1 Introduction; 1.1 The Importance of Device Modeling for IC Design; 1.2 A Short History of the EKV MOS Transistor Model; 1.3 The Book Structure; Part I The Basic Long-Channel Intrinsic Charge-Based Model; 2 Definitions; 2.1 The N-channel Transistor Structure; 2.2 Definition of Charges, Current, Potential, and Electric Fields; 2.3 Transistor Symbol and P-Channel Transistor; 3 The Basic Charge Model; 3.1 Poisson's Equation and Gradual Channel Approximation; 3.2 Surface Potential as a Function of Gate Voltage
3.3 Gate Capacitance3.4 Charge Sheet Approximation; 3.5 Density of Mobile Inverted Charge; 3.5.1 Mobile Charge as a Function of Gate Voltage and Surface Potential; 3.5.2 Mobile Charge as a Function of Channel Voltage and Surface Potential; 3.6 Charge-Potential Linearization; 3.6.1 Linearization of Qi (s); 3.6.2 Linearized Bulk Depletion Charge Qb; 3.6.3 Strong Inversion Approximation; 3.6.4 Evaluation of the Slope Factor; 3.6.5 Compact Model Parameters; 4 Static Drain Current; 4.1 Drain Current Expression; 4.2 Forward and Reverse Current Components; 4.3 Modes of Operation 4.4 Model of Drain Current Based on Charge Linearization4.4.1 Expression Valid for All Levels of Inversion; 4.4.2 Compact Model Parameters; 4.4.3 Inversion Coefficient; 4.4.4 Approximation of the Drain Current in Strong Inversion; 4.4.5 Approximation of the Drain Current in Weak Inversion; 4.4.6 Alternative Continuous Models; 4.5 Fundamental Property: Validity and Application; 4.5.1 Generalization of Drain Current Expression; 4.5.2 Domain of Validity; 4.5.3 Causes of Degradation; 4.5.4 Concept of Pseudo-Resistor; 4.6 Channel Length Modulation; 4.6.1 Effective Channel Length 4.6.2 Weak Inversion4.6.3 Strong Inversion; 4.6.4 Geometrical Effects; 5 The Small-Signal Model; 5.1 The Static Small-Signal Model; 5.1.1 Transconductances; 5.1.2 Residual Output Conductance in Saturation; 5.1.3 Equivalent Circuit; 5.1.4 The Normalized Transconductance to Drain Current Ratio; 5.2 A General NQS Small-Signal Model; 5.3 The QS Dynamic Small-Signal Model; 5.3.1 Intrinsic Capacitances; 5.3.2 Transcapacitances; 5.3.3 Complete QS Circuit; 5.3.4 Domains of Validity of the Different Models; 6 The Noise Model; 6.1 Noise Calculation Methods; 6.1.1 General Expression 6.1.2 Long-Channel Simplification6.2 Low-Frequency Channel Thermal Noise; 6.2.1 Drain Current Thermal Noise PSD; 6.2.2 Thermal Noise Excess Factor Definitions; 6.2.3 Circuit Examples; 6.3 Flicker Noise; 6.3.1 Carrier Number Fluctuations (Mc Worther Model); 6.3.2 Mobility Fluctuations (Hooge Model); 6.3.3 Additional Contributions Due to the Source and Drain Access Resistances; 6.3.4 Total 1/f Noise at the Drain; 6.3.5 Scaling Properties; 6.4 Appendices; Appendix: The Nyquist and Bode Theorems; Appendix: General Noise Expression; 7 Temperature Effects and Matching; 7.1 Introduction 7.2 Temperature Effects |
| Record Nr. | UNINA-9910143747403321 |
Enz Christian
|
||
| Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Charge-based MOS transistor modeling [[electronic resource] ] : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz
| Charge-based MOS transistor modeling [[electronic resource] ] : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz |
| Autore | Enz Christian |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006 |
| Descrizione fisica | 1 online resource (329 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | VittozEric A. <1938-> |
| Soggetto topico |
Metal oxide semiconductors - Mathematical models
Metal oxide semiconductor field-effect transistors - Mathematical models |
| ISBN |
1-280-64993-3
9786610649938 0-470-85546-0 0-470-85545-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Charge-based MOS Transistor Modeling; Contents; Foreword; Preface; List of Symbols; 1 Introduction; 1.1 The Importance of Device Modeling for IC Design; 1.2 A Short History of the EKV MOS Transistor Model; 1.3 The Book Structure; Part I The Basic Long-Channel Intrinsic Charge-Based Model; 2 Definitions; 2.1 The N-channel Transistor Structure; 2.2 Definition of Charges, Current, Potential, and Electric Fields; 2.3 Transistor Symbol and P-Channel Transistor; 3 The Basic Charge Model; 3.1 Poisson's Equation and Gradual Channel Approximation; 3.2 Surface Potential as a Function of Gate Voltage
3.3 Gate Capacitance3.4 Charge Sheet Approximation; 3.5 Density of Mobile Inverted Charge; 3.5.1 Mobile Charge as a Function of Gate Voltage and Surface Potential; 3.5.2 Mobile Charge as a Function of Channel Voltage and Surface Potential; 3.6 Charge-Potential Linearization; 3.6.1 Linearization of Qi (s); 3.6.2 Linearized Bulk Depletion Charge Qb; 3.6.3 Strong Inversion Approximation; 3.6.4 Evaluation of the Slope Factor; 3.6.5 Compact Model Parameters; 4 Static Drain Current; 4.1 Drain Current Expression; 4.2 Forward and Reverse Current Components; 4.3 Modes of Operation 4.4 Model of Drain Current Based on Charge Linearization4.4.1 Expression Valid for All Levels of Inversion; 4.4.2 Compact Model Parameters; 4.4.3 Inversion Coefficient; 4.4.4 Approximation of the Drain Current in Strong Inversion; 4.4.5 Approximation of the Drain Current in Weak Inversion; 4.4.6 Alternative Continuous Models; 4.5 Fundamental Property: Validity and Application; 4.5.1 Generalization of Drain Current Expression; 4.5.2 Domain of Validity; 4.5.3 Causes of Degradation; 4.5.4 Concept of Pseudo-Resistor; 4.6 Channel Length Modulation; 4.6.1 Effective Channel Length 4.6.2 Weak Inversion4.6.3 Strong Inversion; 4.6.4 Geometrical Effects; 5 The Small-Signal Model; 5.1 The Static Small-Signal Model; 5.1.1 Transconductances; 5.1.2 Residual Output Conductance in Saturation; 5.1.3 Equivalent Circuit; 5.1.4 The Normalized Transconductance to Drain Current Ratio; 5.2 A General NQS Small-Signal Model; 5.3 The QS Dynamic Small-Signal Model; 5.3.1 Intrinsic Capacitances; 5.3.2 Transcapacitances; 5.3.3 Complete QS Circuit; 5.3.4 Domains of Validity of the Different Models; 6 The Noise Model; 6.1 Noise Calculation Methods; 6.1.1 General Expression 6.1.2 Long-Channel Simplification6.2 Low-Frequency Channel Thermal Noise; 6.2.1 Drain Current Thermal Noise PSD; 6.2.2 Thermal Noise Excess Factor Definitions; 6.2.3 Circuit Examples; 6.3 Flicker Noise; 6.3.1 Carrier Number Fluctuations (Mc Worther Model); 6.3.2 Mobility Fluctuations (Hooge Model); 6.3.3 Additional Contributions Due to the Source and Drain Access Resistances; 6.3.4 Total 1/f Noise at the Drain; 6.3.5 Scaling Properties; 6.4 Appendices; Appendix: The Nyquist and Bode Theorems; Appendix: General Noise Expression; 7 Temperature Effects and Matching; 7.1 Introduction 7.2 Temperature Effects |
| Record Nr. | UNINA-9910830878003321 |
|
Enz Christian
|
||
| Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider
| MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider |
| Autore | Galup-Montoro Carlos |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2007 |
| Descrizione fisica | 1 online resource (445 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | SchneiderMárcio Cherem |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors - Mathematical models
Field-effect transistors - Mathematical models |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-12087-1
9786611120870 981-270-759-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension
Appendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index |
| Record Nr. | UNINA-9910450680703321 |
|
Galup-Montoro Carlos
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider
| MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider |
| Autore | Galup-Montoro Carlos |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2007 |
| Descrizione fisica | 1 online resource (445 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | SchneiderMárcio Cherem |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors - Mathematical models
Field-effect transistors - Mathematical models |
| ISBN |
1-281-12087-1
9786611120870 981-270-759-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension
Appendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index |
| Record Nr. | UNINA-9910784046503321 |
|
Galup-Montoro Carlos
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
MOSFET modeling for circuit analysis and design / / Carlos Galup-Montoro, Márcio Cherem Schneider
| MOSFET modeling for circuit analysis and design / / Carlos Galup-Montoro, Márcio Cherem Schneider |
| Autore | Galup-Montoro Carlos |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2007 |
| Descrizione fisica | 1 online resource (445 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | SchneiderMárcio Cherem |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors - Mathematical models
Field-effect transistors - Mathematical models |
| ISBN |
1-281-12087-1
9786611120870 981-270-759-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension
Appendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index |
| Record Nr. | UNINA-9910809418503321 |
|
Galup-Montoro Carlos
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Operation and modeling of the MOS transistor / Yannis Tsividis
| Operation and modeling of the MOS transistor / Yannis Tsividis |
| Autore | Tsividis, Yannis |
| Edizione | [2nd ed] |
| Pubbl/distr/stampa | Boston : WCB/McGraw-Hill, c1999 |
| Descrizione fisica | xx, 620 p. : ill. ; 24 cm |
| Disciplina | 621.3815 |
| Soggetto topico |
Metal oxide semiconductors - Mathematical models
Metal oxide semiconductor field-effect transistors - Mathematical models |
| ISBN | 0070655235 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISALENTO-991001315779707536 |
|
Tsividis, Yannis
|
||
| Boston : WCB/McGraw-Hill, c1999 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Salento | ||
| ||
The physics and modeling of MOSFETS [[electronic resource] ] : surface-potential model HiSIM / / Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki
| The physics and modeling of MOSFETS [[electronic resource] ] : surface-potential model HiSIM / / Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
| Autore | Miura-Mattausch Mitiko <1949-> |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2008 |
| Descrizione fisica | 1 online resource (378 p.) |
| Disciplina | 621.3815/284015118 |
| Altri autori (Persone) |
MattauschHans Jurgen
EzakiTatsuya |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors
Metal oxide semiconductor field-effect transistors - Mathematical models |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-96089-6
9786611960896 981-281-205-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Semiconductor device physics. 1.1. Band structure concept. 1.2. Carrier density and fermi level in semiconductors. 1.3. P-N junction. 1.4. Device simulation. 1.5. Summary of equations and symbols presented in chapter 1 for semiconductor device physics -- 2. Basic compact surface-potential model of the MOSFET. 2.1. Compact modeling concept. 2.2. Device structure parameters of the MOSFET. 2.3. Surface potentials. 2.4. Charge densities. 2.5. Drain current. 2.6. Summary of equations and model parameters presented in chapter 2 for basic compact surface-potential model of the MOSFET -- 3. Advanced MOSFET phenomena modeling. 3.1. Threshold voltage shift. 3.2. Depletion effect of the poly-si gate. 3.3. Quantum-mechanical effects. 3.4. Mobility model. 3.5. Channel-length modulation. 3.6. Narrow-channel effects. 3.7. Effects of the length of the diffused source/drain contacts in Shallow-Trench Isolation (STI) technologies. 3.8. Temperature dependences. 3.9. Conservation of symmetry at V[symbol] = 0. 3.10. Harmonic distortions. 3.11. Summary of equations and model parameters appearing in chapter 3 for advanced MOSFET phenomena modeling -- 4. Capacitances. 4.1. Intrinsic capacitances. 4.2. Overlap capacitances. 4.3. Longitudinal (lateral) -field-induced capacitance. 4.4. Fringing capacitance. 4.5. Summary of equations and model parameters appearing in chapter 4 for capacitances -- 5. Leakage currents and junction diode. 5.1. Leakage currents. 5.2. Bulk/source and bulk/drain junction models. 5.3. Summary of equations and model parameters appeared in chapter 5 for leakage currents and junction diode -- 6. Modeling of phenomena important for RF applications. 6.1. Noise models. 6.2. Non-Quasi-Static (NQS) model. 6.3. External MOS transistor resistances. 6.4. Summary of equations and model parameters appeared in chapter 6 for modeling of phenomena important for RF applications -- 7. Summary of HiSIM's model equations, parameters, and parameter-extraction method. 7.1. Model equations of HiSIM. 7.2. Model flags and exclusion of modeled effects. 7.3. Model parameters and their meaning. 7.4. Default values of the model parameter. 7.5. Parameter extraction method. |
| Record Nr. | UNINA-9910454177003321 |
|
Miura-Mattausch Mitiko <1949->
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
The physics and modeling of MOSFETS [[electronic resource] ] : surface-potential model HiSIM / / Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki
| The physics and modeling of MOSFETS [[electronic resource] ] : surface-potential model HiSIM / / Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
| Autore | Miura-Mattausch Mitiko <1949-> |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2008 |
| Descrizione fisica | 1 online resource (378 p.) |
| Disciplina | 621.3815/284015118 |
| Altri autori (Persone) |
MattauschHans Jurgen
EzakiTatsuya |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors
Metal oxide semiconductor field-effect transistors - Mathematical models |
| ISBN |
1-281-96089-6
9786611960896 981-281-205-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Semiconductor device physics. 1.1. Band structure concept. 1.2. Carrier density and fermi level in semiconductors. 1.3. P-N junction. 1.4. Device simulation. 1.5. Summary of equations and symbols presented in chapter 1 for semiconductor device physics -- 2. Basic compact surface-potential model of the MOSFET. 2.1. Compact modeling concept. 2.2. Device structure parameters of the MOSFET. 2.3. Surface potentials. 2.4. Charge densities. 2.5. Drain current. 2.6. Summary of equations and model parameters presented in chapter 2 for basic compact surface-potential model of the MOSFET -- 3. Advanced MOSFET phenomena modeling. 3.1. Threshold voltage shift. 3.2. Depletion effect of the poly-si gate. 3.3. Quantum-mechanical effects. 3.4. Mobility model. 3.5. Channel-length modulation. 3.6. Narrow-channel effects. 3.7. Effects of the length of the diffused source/drain contacts in Shallow-Trench Isolation (STI) technologies. 3.8. Temperature dependences. 3.9. Conservation of symmetry at V[symbol] = 0. 3.10. Harmonic distortions. 3.11. Summary of equations and model parameters appearing in chapter 3 for advanced MOSFET phenomena modeling -- 4. Capacitances. 4.1. Intrinsic capacitances. 4.2. Overlap capacitances. 4.3. Longitudinal (lateral) -field-induced capacitance. 4.4. Fringing capacitance. 4.5. Summary of equations and model parameters appearing in chapter 4 for capacitances -- 5. Leakage currents and junction diode. 5.1. Leakage currents. 5.2. Bulk/source and bulk/drain junction models. 5.3. Summary of equations and model parameters appeared in chapter 5 for leakage currents and junction diode -- 6. Modeling of phenomena important for RF applications. 6.1. Noise models. 6.2. Non-Quasi-Static (NQS) model. 6.3. External MOS transistor resistances. 6.4. Summary of equations and model parameters appeared in chapter 6 for modeling of phenomena important for RF applications -- 7. Summary of HiSIM's model equations, parameters, and parameter-extraction method. 7.1. Model equations of HiSIM. 7.2. Model flags and exclusion of modeled effects. 7.3. Model parameters and their meaning. 7.4. Default values of the model parameter. 7.5. Parameter extraction method. |
| Record Nr. | UNINA-9910782479403321 |
|
Miura-Mattausch Mitiko <1949->
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
The physics and modeling of MOSFETS : surface-potential model HiSIM / / Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki
| The physics and modeling of MOSFETS : surface-potential model HiSIM / / Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
| Autore | Miura-Mattausch Mitiko <1949-> |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2008 |
| Descrizione fisica | 1 online resource (378 p.) |
| Disciplina | 621.3815/284015118 |
| Altri autori (Persone) |
MattauschHans Jurgen
EzakiTatsuya |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors
Metal oxide semiconductor field-effect transistors - Mathematical models |
| ISBN |
1-281-96089-6
9786611960896 981-281-205-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Semiconductor device physics. 1.1. Band structure concept. 1.2. Carrier density and fermi level in semiconductors. 1.3. P-N junction. 1.4. Device simulation. 1.5. Summary of equations and symbols presented in chapter 1 for semiconductor device physics -- 2. Basic compact surface-potential model of the MOSFET. 2.1. Compact modeling concept. 2.2. Device structure parameters of the MOSFET. 2.3. Surface potentials. 2.4. Charge densities. 2.5. Drain current. 2.6. Summary of equations and model parameters presented in chapter 2 for basic compact surface-potential model of the MOSFET -- 3. Advanced MOSFET phenomena modeling. 3.1. Threshold voltage shift. 3.2. Depletion effect of the poly-si gate. 3.3. Quantum-mechanical effects. 3.4. Mobility model. 3.5. Channel-length modulation. 3.6. Narrow-channel effects. 3.7. Effects of the length of the diffused source/drain contacts in Shallow-Trench Isolation (STI) technologies. 3.8. Temperature dependences. 3.9. Conservation of symmetry at V[symbol] = 0. 3.10. Harmonic distortions. 3.11. Summary of equations and model parameters appearing in chapter 3 for advanced MOSFET phenomena modeling -- 4. Capacitances. 4.1. Intrinsic capacitances. 4.2. Overlap capacitances. 4.3. Longitudinal (lateral) -field-induced capacitance. 4.4. Fringing capacitance. 4.5. Summary of equations and model parameters appearing in chapter 4 for capacitances -- 5. Leakage currents and junction diode. 5.1. Leakage currents. 5.2. Bulk/source and bulk/drain junction models. 5.3. Summary of equations and model parameters appeared in chapter 5 for leakage currents and junction diode -- 6. Modeling of phenomena important for RF applications. 6.1. Noise models. 6.2. Non-Quasi-Static (NQS) model. 6.3. External MOS transistor resistances. 6.4. Summary of equations and model parameters appeared in chapter 6 for modeling of phenomena important for RF applications -- 7. Summary of HiSIM's model equations, parameters, and parameter-extraction method. 7.1. Model equations of HiSIM. 7.2. Model flags and exclusion of modeled effects. 7.3. Model parameters and their meaning. 7.4. Default values of the model parameter. 7.5. Parameter extraction method. |
| Record Nr. | UNINA-9910811398903321 |
|
Miura-Mattausch Mitiko <1949->
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
