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Compact MOSFET models for VLSI design / / A.B. Bhattacharyya
| Compact MOSFET models for VLSI design / / A.B. Bhattacharyya |
| Autore | Bhattacharyya A. B. (Amalendu Bhushan) |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | Singapore ; , : John Wiley & Sons (Asia), , c2009 |
| Descrizione fisica | 1 online resource (458 p.) |
| Disciplina |
621.39/5
621.395 |
| Soggetto topico |
Integrated circuits - Very large scale integration - Design and construction
Metal oxide semiconductor field-effect transistors - Design and construction |
| ISBN |
1-282-38210-1
9786612382109 0-470-82344-5 0-470-82343-7 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Semiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method. |
| Record Nr. | UNINA-9910139778103321 |
Bhattacharyya A. B. (Amalendu Bhushan)
|
||
| Singapore ; , : John Wiley & Sons (Asia), , c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Compact MOSFET models for VLSI design / / A.B. Bhattacharyya
| Compact MOSFET models for VLSI design / / A.B. Bhattacharyya |
| Autore | Bhattacharyya A. B. (Amalendu Bhushan) |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | Singapore ; , : John Wiley & Sons (Asia), , c2009 |
| Descrizione fisica | 1 online resource (458 p.) |
| Disciplina |
621.39/5
621.395 |
| Soggetto topico |
Integrated circuits - Very large scale integration - Design and construction
Metal oxide semiconductor field-effect transistors - Design and construction |
| ISBN |
1-282-38210-1
9786612382109 0-470-82344-5 0-470-82343-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Semiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method. |
| Record Nr. | UNINA-9910830209303321 |
|
Bhattacharyya A. B. (Amalendu Bhushan)
|
||
| Singapore ; , : John Wiley & Sons (Asia), , c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
