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Biblioteca

MARC Lista (tabellare)
Fifth biennial nonvolatile memory technology review : proceedings, 1993 conference, June 23-24, 1993, Linthicum Heights, MD, USA
Fifth biennial nonvolatile memory technology review : proceedings, 1993 conference, June 23-24, 1993, Linthicum Heights, MD, USA
Pubbl/distr/stampa [Place of publication not identified], : Institute of Electrical and Electronics Engineers, 1993
Disciplina 621.39/7
Soggetto topico Semiconductor storage devices
Magnetic memory (Computers)
Flash memories (Computers)
Electrical & Computer Engineering
Engineering & Applied Sciences
Electrical Engineering
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996209198003316
[Place of publication not identified], : Institute of Electrical and Electronics Engineers, 1993
Materiale a stampa
Lo trovi qui: Univ. di Salerno
Opac: Controlla la disponibilità qui
Introduction to magnetic random-access memory / / edited by Bernard Dieny, Ronald B. Goldfarb, Kyung-Jin Lee
Introduction to magnetic random-access memory / / edited by Bernard Dieny, Ronald B. Goldfarb, Kyung-Jin Lee
Pubbl/distr/stampa Hoboken, New Jersey : , : Wiley-IEEE Press, , [2017]
Descrizione fisica 1 online resource (263 pages) : illustrations
Disciplina 004.5/3
Collana IEEE magnetics
Soggetto topico Magnetic memory (Computers)
ISBN 1-119-07935-7
1-119-07941-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Basic Spintronic Transport Phenomena / Nicolas Locatelli, Vincent Cros -- Magnetic Properties of Materials for MRAM / Shinji Yuasa -- Micromagnetism Applied to Magnetic Nanostructures / Liliana D Buda-Prejbeanu -- Magnetization Dynamics / William E Bailey -- Magnetic Random-Access Memory / Bernard Dieny, I Lucian Prejbeanu -- Magnetic Back-End Technology / Michael C Gaidis -- Beyond MRAM: Nonvolatile Logic-in-Memory VLSI / Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, Hideo Ohno -- Appendix: Units for Magnetic Properties.
Record Nr. UNINA-9910151742203321
Hoboken, New Jersey : , : Wiley-IEEE Press, , [2017]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Introduction to magnetic random-access memory / / edited by Bernard Dieny, Ronald B. Goldfarb, Kyung-Jin Lee
Introduction to magnetic random-access memory / / edited by Bernard Dieny, Ronald B. Goldfarb, Kyung-Jin Lee
Pubbl/distr/stampa Hoboken, New Jersey : , : Wiley-IEEE Press, , [2017]
Descrizione fisica 1 online resource (263 pages) : illustrations
Disciplina 004.5/3
Collana IEEE magnetics
Soggetto topico Magnetic memory (Computers)
ISBN 1-119-07935-7
1-119-07941-1
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Basic Spintronic Transport Phenomena / Nicolas Locatelli, Vincent Cros -- Magnetic Properties of Materials for MRAM / Shinji Yuasa -- Micromagnetism Applied to Magnetic Nanostructures / Liliana D Buda-Prejbeanu -- Magnetization Dynamics / William E Bailey -- Magnetic Random-Access Memory / Bernard Dieny, I Lucian Prejbeanu -- Magnetic Back-End Technology / Michael C Gaidis -- Beyond MRAM: Nonvolatile Logic-in-Memory VLSI / Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, Hideo Ohno -- Appendix: Units for Magnetic Properties.
Record Nr. UNINA-9910830189003321
Hoboken, New Jersey : , : Wiley-IEEE Press, , [2017]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Magnetic memory technology : spin-transfer-torque MRAM and beyond / / Denny D. Tang, Chi-Feng Pai
Magnetic memory technology : spin-transfer-torque MRAM and beyond / / Denny D. Tang, Chi-Feng Pai
Autore Tang Denny D.
Pubbl/distr/stampa Hoboken, New Jersey : , : Wiley-IEEE Press, , [2021]
Descrizione fisica 1 PDF
Disciplina 621.3973
Soggetto topico Magnetic memory (Computers)
Nonvolatile random-access memory
ISBN 1-119-56222-8
1-119-56226-0
1-119-56228-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto 1. Basic electromagnetism (25 pages) -- 1.1 Introduction -- 1.2 Magnetic force, pole, field, dipole -- 1.3 Magnetic dipole moment, torque and energy -- 1.4 Magnetic flux and magnetic induction -- 1.5 Ampere's circuital law, Biot-Savart law and magnetic field from magnetic material -- 1.5.1 Ampere's Law -- 1.5.2 Biot=Savart's Law -- 1.5.3 Magnetic field from magnetic material -- 1.6 Equations, cgs-SI unit conversion tables -- -- 2 Magnetism and magnetic materials (51 pages) -- 2.1 Introduction -- 2.2 Origin of magnetization -- 2.2.1 From Ampère to Einstein -- 2.2.2 Precession -- 2.2.3 Electron spin -- 2.2.4 Spin-orbit interaction -- 2.2.5 Hund's rules -- 2.3 Classification of magnetisms -- 2.3.1 Diamagnetism -- 2.3.2 Paramagnetism -- 2.3.3 Ferromagnetism -- 2.3.4 Antiferromagnetism -- 2.3.5 Ferrimagnetism -- 2.4 Exchange interactions -- 2.4.1 Direct exchange -- 2.4.2 Indirect exchange: Superexchange -- 2.4.3 Indirect exchange: RKKY interaction -- 2.5 Magnetization in magnetic metals and oxides -- 2.5.1 Slater-Pauling curve -- 2.5.2 Rigid band model -- 2.5.3 Iron oxides and iron garnets -- 2.6 Phenomenology of magnetic anisotropy -- 2.6.1 Uniaxial anisotropy -- 2.6.2 Cubic anisotropy -- 2.7 2Origins of magnetic anisotropy -- 2.7.1 Shape anisotropy -- 2.7.2 Magnetocrystalline anisotropy (MCA) -- 2.7.3 Perpendicular magnetic anisotropy (PMA) -- 2.8 Magnetic domain and domain walls -- 2.8.1 Domain wall -- 2.8.2 Single domain and superparamagnetism -- -- 3 Magnetic thin films -- 3.1 Introduction -- 3.2 Magnetic thin film growth -- 3.2.1 Sputter deposition -- 3.2.2 Molecular beam epitaxy (MBE) -- 3.3 Magnetic thin film characterization -- 3.3.1 Vibrating-sample magnetometer (VSM) -- 3.3.2 Magneto-optical Kerr effect (MOKE) -- -- 4 Magnetoresistance effects (14 pages) -- 4.1 Introduction -- 4.2 Anisotropic magnetoresistance (AMR) -- 4.3 Giant magnetoresistance (GMR) -- 4.4 Tunneling magnetoresistance (TMR) and magnetic tunnel junction (MTJ).
4.5 Contemporary MTJ designs and characterization -- -- 5 Magnetization switching and Field MRAMs (12 pages text + Figs) -- -- 5.1 Introduction -- 5.2 Magnetization reversible rotation and irreversible switching under external field -- 5.2.1 Full film and patterned device -- [homework] -- 5.2.2 Magnetization rotation and switching under a field in easy axis direction -- 5.2.3 Magnetization rotation and switching Under two orthogonal applied fields -- 5.2.4 Magnetization behavior of a Synthetic Anti-Ferromagnetic (SAF) stack -- 5.3 Field MRAMs -- 5.3.1 MTJ of Field MRAM -- 5.3.2 Half select bit disturbance issue -- 5.4 Applications -- references -- -- 6 Spin current and spin dynamics (17 pages) -- 6.1 Introduction to Hall effects -- 6.1.1 Ordinary Hall effect -- 6.1.2 Anomalous Hall effect and spin Hall effect -- 6.2 Spin current -- 6.2.1 Electro spin polarization in NM/FM/NM film stack -- 6.2.2 Non-local spin valve: Spin current injection, diffusion and inverse spin Hall effect -- 6.2.3 Generalized carrier and spin current draft-diffusion equation -- 6.3 Spin dynamics -- 6.3.1 Landau-Lifshitz and Landau-Lifshitz-Gilbert dynamics equation of motion -- 6.3.2 Ferromagnetic resonance -- 6.3.3 Spin pumping and effective damping in FM/NM film stack -- 6.3.4 FM/NM/FM coupling through spin current -- 6.4 Interaction between polarized conduction electron and local magnetization -- 6.4.1 Electron spin torque transfer to local magnetization -- 6.4.2 Macrospin model -- 6.4.3 Spin torque transfer in spin valve -- 6.4.3.1 Switching threshold current density -- 6.4.3.2 Switching time -- 6.4.4 Spin-torque transfer in magnetic tunnel junction -- 6.4.5 Spin-torque ferromagnetic resonance and torkance -- 6.5 Spin current interaction with domain wall -- 6.5.1 LLG description of domain wall motion under spin current -- 6.5.2 Threshold current density -- -- 7 Spin-torque-transfer (STT) MRAM engineering (46 pages) -- 7.1 Introduction.
7.2 Thermal stability energy and switching energy -- 7.3 STT switching properties -- 7.3.1 Switching probability and wrote error rate (WER) -- 7.3.2 Switching current in precession regime -- 7.3.3 Switching delay o a STT-MRAM cell -- 7.3.4 Read disturb rate -- 7.3.5 Switching under a magnetic field - phase diagram -- 7.3.6 MTJ switching abnormality -- 7.3.6.1 Magnetic back hopping -- 7.3.6.2 Bifurcation switching (Ballooning in WER) -- 7.3.6.3 Domain mediated magnetic reversal -- 7.4 The integrity of MTJ tunnel barrier -- 7.4.1 Write current stress -- 7.4.2 MgO degradation model -- 7.5 Data retention -- 7.5.1 Energy barrier extraction based on bit switching probability -- 7.5.2 Energy barrier extraction based on aiding field -- 7.5.3 Energy barrier extraction with retention bake at chip level -- 7.5.4 Data retention at chip level -- 7.6 The cell design consideration and scaling -- 7.6.1 MRAM bit cell and array -- 7.6.2 CMOS options -- 7.6.3 Cell switching efficiency -- 7.6.4 The cell design considerations -- 7.6.4.1 Write current and cell size -- 7.6.4.2 Read access performance -- 7.6.4.3 READ and WRITE margin -- 7.6.4.4 Stray field control for perpendicular MTJ -- 7.6.4.5 Suppression of stochastic switching time variation ideas -- 7.6.5 The scaling of MTJ for memory -- 7.6.5.1 In-plane MTJ -- 7.6.5.2 Out-of-plane (perpendicular) MTJ -- 7.7 MRAM cell SPICE model -- 7.7.1 Introduction -- 7.7.2 MTJ SPICE model embedded with Macrospin calculator -- 7.8 Test chip and chip level weak bit screening methodology -- 7.8.1 READ margin bits -- 7.8.2 WRITE margin bits -- 7.8.3 Weak retention bits -- 7.8.4 Low endurance bits -- -- 8 Advanced switching MRAM modes -- -- 8.1 Introduction -- 8.2 Current Induced-Domain-wall-motion (CIDM) memory -- 8.2.1 Single-bit cell -- 8.2.2 Multi-bit cell: Racetrack -- 8.3 Spin-orbit Torque (SOT) Memory -- 8.3.1 Introduction -- 8.3.2 Spin-orbit-Torque (SOT) MRAM cells -- 8.3.2.1 In-plane SOT cell.
in-plane SOT cell structure and switching behavior -- Device engineering and Cell scaling -- 8.3.2.2 Perpendicular SOT Cell -- 8.3.3 Materials choice for SOT-MRAM cell -- 8.3.3.1 Transition metals and their alloys -- 8.3.3.2 Emergent materials systems -- 8.3.3.3 Benchmarking of SOT switching efficiency -- 8.4 Magneto-electric effects and voltage-control magnetic anisotropy (VCMA) MRAM -- 8.4.1 Magneto-electric effects -- 8.4.2 VCMA-assisted MRAMS -- 8.4.2.1 VCMA-assisted Field-MRAM -- 8.4.2.2 VCMA-assisted multi-bit-word SOT-MRAM -- 8.4.2.3 VCMA-assisted Precession-toggle MRAM -- 8.5 Relative Merit of advanced switching mode MRAMs -- -- 9 MRAM applications, market position and production (31 pages) -- 9.1 Introduction -- 9.2 Intrinsic properties and product attributes of emerging non-volatile memories -- 9.2.1 Intrinsic properties -- 9.2.2 Product attributes -- 9.3 Memory landscape and MRAM opportunity -- 9.3.1 MRAM as embedded memory in logic SoC chips -- MTJ process integration issue of embedded MRAM -- MRAM as embedded FLASH in micro-controller -- embedded MRAM cell size -- MRAM as cache memory in processor -- improvement of access latency -- 9.3.2 High-density discrete MRAM -- 9.3.2.1 Technology status -- 9.3.2.2 Ideal CMOS technology for high-density MRAM -- 9.3.3 Applications and market opportunity -- 9.3.3.1 Battery-back memory applications -- 9.3.3.2 Internet -of-things (IoT), Cybersecurity applications -- 9.3.3.3 Applications to in-memory computing, artificial intelligence (AI) -- 9.3.3.4 MRAM based Memory-driven computing -- 9.4 MRAM production -- 9.4.1 MRAM product ecosystem -- 9.4.2 MRAM production history -- 9.4.2.1 1st generation MRAM - Field MRAM -- 9.4.2.2 2nd generation MRAM - STT MRAM -- 9.4.2.3 Potential 3rd generation MRAM -SOT MRAM -- Appendix -- A. Retention bake (include two-way flip) (1 pages) -- B. Memory Functionality-based scaling (10 pages) -- C. High-bandwidth MRAM architecture (6 pages).
Record Nr. UNINA-9910555253903321
Tang Denny D.  
Hoboken, New Jersey : , : Wiley-IEEE Press, , [2021]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Magnetic memory technology : spin-transfer-torque MRAM and beyond / / Denny D. Tang, Chi-Feng Pai
Magnetic memory technology : spin-transfer-torque MRAM and beyond / / Denny D. Tang, Chi-Feng Pai
Autore Tang Denny D.
Pubbl/distr/stampa Hoboken, New Jersey : , : Wiley-IEEE Press, , [2021]
Descrizione fisica 1 PDF
Disciplina 621.3973
Soggetto topico Magnetic memory (Computers)
Nonvolatile random-access memory
ISBN 1-119-56222-8
1-119-56226-0
1-119-56228-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto 1. Basic electromagnetism (25 pages) -- 1.1 Introduction -- 1.2 Magnetic force, pole, field, dipole -- 1.3 Magnetic dipole moment, torque and energy -- 1.4 Magnetic flux and magnetic induction -- 1.5 Ampere's circuital law, Biot-Savart law and magnetic field from magnetic material -- 1.5.1 Ampere's Law -- 1.5.2 Biot=Savart's Law -- 1.5.3 Magnetic field from magnetic material -- 1.6 Equations, cgs-SI unit conversion tables -- -- 2 Magnetism and magnetic materials (51 pages) -- 2.1 Introduction -- 2.2 Origin of magnetization -- 2.2.1 From Ampère to Einstein -- 2.2.2 Precession -- 2.2.3 Electron spin -- 2.2.4 Spin-orbit interaction -- 2.2.5 Hund's rules -- 2.3 Classification of magnetisms -- 2.3.1 Diamagnetism -- 2.3.2 Paramagnetism -- 2.3.3 Ferromagnetism -- 2.3.4 Antiferromagnetism -- 2.3.5 Ferrimagnetism -- 2.4 Exchange interactions -- 2.4.1 Direct exchange -- 2.4.2 Indirect exchange: Superexchange -- 2.4.3 Indirect exchange: RKKY interaction -- 2.5 Magnetization in magnetic metals and oxides -- 2.5.1 Slater-Pauling curve -- 2.5.2 Rigid band model -- 2.5.3 Iron oxides and iron garnets -- 2.6 Phenomenology of magnetic anisotropy -- 2.6.1 Uniaxial anisotropy -- 2.6.2 Cubic anisotropy -- 2.7 2Origins of magnetic anisotropy -- 2.7.1 Shape anisotropy -- 2.7.2 Magnetocrystalline anisotropy (MCA) -- 2.7.3 Perpendicular magnetic anisotropy (PMA) -- 2.8 Magnetic domain and domain walls -- 2.8.1 Domain wall -- 2.8.2 Single domain and superparamagnetism -- -- 3 Magnetic thin films -- 3.1 Introduction -- 3.2 Magnetic thin film growth -- 3.2.1 Sputter deposition -- 3.2.2 Molecular beam epitaxy (MBE) -- 3.3 Magnetic thin film characterization -- 3.3.1 Vibrating-sample magnetometer (VSM) -- 3.3.2 Magneto-optical Kerr effect (MOKE) -- -- 4 Magnetoresistance effects (14 pages) -- 4.1 Introduction -- 4.2 Anisotropic magnetoresistance (AMR) -- 4.3 Giant magnetoresistance (GMR) -- 4.4 Tunneling magnetoresistance (TMR) and magnetic tunnel junction (MTJ).
4.5 Contemporary MTJ designs and characterization -- -- 5 Magnetization switching and Field MRAMs (12 pages text + Figs) -- -- 5.1 Introduction -- 5.2 Magnetization reversible rotation and irreversible switching under external field -- 5.2.1 Full film and patterned device -- [homework] -- 5.2.2 Magnetization rotation and switching under a field in easy axis direction -- 5.2.3 Magnetization rotation and switching Under two orthogonal applied fields -- 5.2.4 Magnetization behavior of a Synthetic Anti-Ferromagnetic (SAF) stack -- 5.3 Field MRAMs -- 5.3.1 MTJ of Field MRAM -- 5.3.2 Half select bit disturbance issue -- 5.4 Applications -- references -- -- 6 Spin current and spin dynamics (17 pages) -- 6.1 Introduction to Hall effects -- 6.1.1 Ordinary Hall effect -- 6.1.2 Anomalous Hall effect and spin Hall effect -- 6.2 Spin current -- 6.2.1 Electro spin polarization in NM/FM/NM film stack -- 6.2.2 Non-local spin valve: Spin current injection, diffusion and inverse spin Hall effect -- 6.2.3 Generalized carrier and spin current draft-diffusion equation -- 6.3 Spin dynamics -- 6.3.1 Landau-Lifshitz and Landau-Lifshitz-Gilbert dynamics equation of motion -- 6.3.2 Ferromagnetic resonance -- 6.3.3 Spin pumping and effective damping in FM/NM film stack -- 6.3.4 FM/NM/FM coupling through spin current -- 6.4 Interaction between polarized conduction electron and local magnetization -- 6.4.1 Electron spin torque transfer to local magnetization -- 6.4.2 Macrospin model -- 6.4.3 Spin torque transfer in spin valve -- 6.4.3.1 Switching threshold current density -- 6.4.3.2 Switching time -- 6.4.4 Spin-torque transfer in magnetic tunnel junction -- 6.4.5 Spin-torque ferromagnetic resonance and torkance -- 6.5 Spin current interaction with domain wall -- 6.5.1 LLG description of domain wall motion under spin current -- 6.5.2 Threshold current density -- -- 7 Spin-torque-transfer (STT) MRAM engineering (46 pages) -- 7.1 Introduction.
7.2 Thermal stability energy and switching energy -- 7.3 STT switching properties -- 7.3.1 Switching probability and wrote error rate (WER) -- 7.3.2 Switching current in precession regime -- 7.3.3 Switching delay o a STT-MRAM cell -- 7.3.4 Read disturb rate -- 7.3.5 Switching under a magnetic field - phase diagram -- 7.3.6 MTJ switching abnormality -- 7.3.6.1 Magnetic back hopping -- 7.3.6.2 Bifurcation switching (Ballooning in WER) -- 7.3.6.3 Domain mediated magnetic reversal -- 7.4 The integrity of MTJ tunnel barrier -- 7.4.1 Write current stress -- 7.4.2 MgO degradation model -- 7.5 Data retention -- 7.5.1 Energy barrier extraction based on bit switching probability -- 7.5.2 Energy barrier extraction based on aiding field -- 7.5.3 Energy barrier extraction with retention bake at chip level -- 7.5.4 Data retention at chip level -- 7.6 The cell design consideration and scaling -- 7.6.1 MRAM bit cell and array -- 7.6.2 CMOS options -- 7.6.3 Cell switching efficiency -- 7.6.4 The cell design considerations -- 7.6.4.1 Write current and cell size -- 7.6.4.2 Read access performance -- 7.6.4.3 READ and WRITE margin -- 7.6.4.4 Stray field control for perpendicular MTJ -- 7.6.4.5 Suppression of stochastic switching time variation ideas -- 7.6.5 The scaling of MTJ for memory -- 7.6.5.1 In-plane MTJ -- 7.6.5.2 Out-of-plane (perpendicular) MTJ -- 7.7 MRAM cell SPICE model -- 7.7.1 Introduction -- 7.7.2 MTJ SPICE model embedded with Macrospin calculator -- 7.8 Test chip and chip level weak bit screening methodology -- 7.8.1 READ margin bits -- 7.8.2 WRITE margin bits -- 7.8.3 Weak retention bits -- 7.8.4 Low endurance bits -- -- 8 Advanced switching MRAM modes -- -- 8.1 Introduction -- 8.2 Current Induced-Domain-wall-motion (CIDM) memory -- 8.2.1 Single-bit cell -- 8.2.2 Multi-bit cell: Racetrack -- 8.3 Spin-orbit Torque (SOT) Memory -- 8.3.1 Introduction -- 8.3.2 Spin-orbit-Torque (SOT) MRAM cells -- 8.3.2.1 In-plane SOT cell.
in-plane SOT cell structure and switching behavior -- Device engineering and Cell scaling -- 8.3.2.2 Perpendicular SOT Cell -- 8.3.3 Materials choice for SOT-MRAM cell -- 8.3.3.1 Transition metals and their alloys -- 8.3.3.2 Emergent materials systems -- 8.3.3.3 Benchmarking of SOT switching efficiency -- 8.4 Magneto-electric effects and voltage-control magnetic anisotropy (VCMA) MRAM -- 8.4.1 Magneto-electric effects -- 8.4.2 VCMA-assisted MRAMS -- 8.4.2.1 VCMA-assisted Field-MRAM -- 8.4.2.2 VCMA-assisted multi-bit-word SOT-MRAM -- 8.4.2.3 VCMA-assisted Precession-toggle MRAM -- 8.5 Relative Merit of advanced switching mode MRAMs -- -- 9 MRAM applications, market position and production (31 pages) -- 9.1 Introduction -- 9.2 Intrinsic properties and product attributes of emerging non-volatile memories -- 9.2.1 Intrinsic properties -- 9.2.2 Product attributes -- 9.3 Memory landscape and MRAM opportunity -- 9.3.1 MRAM as embedded memory in logic SoC chips -- MTJ process integration issue of embedded MRAM -- MRAM as embedded FLASH in micro-controller -- embedded MRAM cell size -- MRAM as cache memory in processor -- improvement of access latency -- 9.3.2 High-density discrete MRAM -- 9.3.2.1 Technology status -- 9.3.2.2 Ideal CMOS technology for high-density MRAM -- 9.3.3 Applications and market opportunity -- 9.3.3.1 Battery-back memory applications -- 9.3.3.2 Internet -of-things (IoT), Cybersecurity applications -- 9.3.3.3 Applications to in-memory computing, artificial intelligence (AI) -- 9.3.3.4 MRAM based Memory-driven computing -- 9.4 MRAM production -- 9.4.1 MRAM product ecosystem -- 9.4.2 MRAM production history -- 9.4.2.1 1st generation MRAM - Field MRAM -- 9.4.2.2 2nd generation MRAM - STT MRAM -- 9.4.2.3 Potential 3rd generation MRAM -SOT MRAM -- Appendix -- A. Retention bake (include two-way flip) (1 pages) -- B. Memory Functionality-based scaling (10 pages) -- C. High-bandwidth MRAM architecture (6 pages).
Record Nr. UNINA-9910830138003321
Tang Denny D.  
Hoboken, New Jersey : , : Wiley-IEEE Press, , [2021]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Magnetoelectronics [e-book] / edited by Mark Johnson
Magnetoelectronics [e-book] / edited by Mark Johnson
Pubbl/distr/stampa Amsterdam ; San Diego, CA : Elsevier, 2004
Descrizione fisica xii, 396 p. : ill. (some col.) ; 25 cm
Disciplina 621.3
Altri autori (Persone) Johnson, Mark Brian
Soggetto topico Spintronics
Magnetic memory (Computers)
ISBN 9780120884872
0120884879
Formato Risorse elettroniche
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Introduction to magnetoelectronics / Mark Johnson -- Spin valves / B. Dieny -- Spin-polarized tunneling / Jagadeesh S. Moodera and Robert H. Meservey -- Magnetoresistive random access memories / James Daughton -- Magnetic tunnel junction based magnetoresistive random access memory / Johan Åkerman ... [et al.] -- Broader digital electronics applications of magnetoelectronics / Mark Johnson -- Magnetoresistive DNA chips / P.P. Freitas ... [et al.]
Record Nr. UNISALENTO-991003233859707536
Amsterdam ; San Diego, CA : Elsevier, 2004
Risorse elettroniche
Lo trovi qui: Univ. del Salento
Opac: Controlla la disponibilità qui
Nanomagnetic and spintronic devices for energy-efficient memory and computing / / edited by Jayasimha Atulasimha and Supriyo Bandyopadhyay
Nanomagnetic and spintronic devices for energy-efficient memory and computing / / edited by Jayasimha Atulasimha and Supriyo Bandyopadhyay
Pubbl/distr/stampa Chichester, West Sussex, England : , : Wiley, , 2016
Descrizione fisica 1 online resource (359 p.)
Disciplina 621.39/73
Soggetto topico Magnetic memory (Computers)
Spintronics
Nanoelectronics
ISBN 1-118-86923-0
1-118-86925-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Introduction to spintronic and nanomagnetic computing devices -- Potential applications of all electric spin valves made of asymmetrically biased quantum point contacts -- Spin-transistor technology for spintronics/CMOS hybrid logic circuits and systems -- Spin transfer torque : a multiscale picture -- Magnetic tunnel junction based and integrated logic and computation -- Magnetization switching and domain wall motion due to spin orbit torque -- Magnonic logic devices -- Strain mediated magnetoelectric memory -- Hybrid spintronics-strainronics -- Unconventional nanocomputing with physical wave interference functions.
Record Nr. UNINA-9910136254703321
Chichester, West Sussex, England : , : Wiley, , 2016
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Nanomagnetic and spintronic devices for energy-efficient memory and computing / / edited by Jayasimha Atulasimha and Supriyo Bandyopadhyay
Nanomagnetic and spintronic devices for energy-efficient memory and computing / / edited by Jayasimha Atulasimha and Supriyo Bandyopadhyay
Pubbl/distr/stampa Chichester, West Sussex, England : , : Wiley, , 2016
Descrizione fisica 1 online resource (359 p.)
Disciplina 621.39/73
Soggetto topico Magnetic memory (Computers)
Spintronics
Nanoelectronics
ISBN 1-118-86923-0
1-118-86925-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Introduction to spintronic and nanomagnetic computing devices -- Potential applications of all electric spin valves made of asymmetrically biased quantum point contacts -- Spin-transistor technology for spintronics/CMOS hybrid logic circuits and systems -- Spin transfer torque : a multiscale picture -- Magnetic tunnel junction based and integrated logic and computation -- Magnetization switching and domain wall motion due to spin orbit torque -- Magnonic logic devices -- Strain mediated magnetoelectric memory -- Hybrid spintronics-strainronics -- Unconventional nanocomputing with physical wave interference functions.
Record Nr. UNINA-9910821620303321
Chichester, West Sussex, England : , : Wiley, , 2016
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Nonvolatile memory design : magnetic, resistive, and phase change / / Hai Li, Yiran Chen
Nonvolatile memory design : magnetic, resistive, and phase change / / Hai Li, Yiran Chen
Autore Li Hai <1975, >
Pubbl/distr/stampa Boca Raton, Fla. : , : CRC Press, , 2012
Descrizione fisica 1 online resource (200 p.)
Disciplina 004.568
621.39732
Altri autori (Persone) ChenYiran <1976->
Soggetto topico Semiconductor storage devices
Magnetic memory (Computers)
Flash memories (Computers)
Change of state (Physics) - Industrial applications
Soggetto genere / forma Electronic books.
ISBN 1-280-12159-9
9786613525451
1-4398-0746-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto 1. Introduction to semiconductor memories -- 2. Phase change memory -- 3. Spin-transfer torque RAM -- 4. Resistive random access memory -- 5. Memristors -- 6. The future of nonvolatile memory.
Record Nr. UNINA-9910458158103321
Li Hai <1975, >  
Boca Raton, Fla. : , : CRC Press, , 2012
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Nonvolatile memory design : magnetic, resistive, and phase change / / Hai Li, Yiran Chen
Nonvolatile memory design : magnetic, resistive, and phase change / / Hai Li, Yiran Chen
Autore Li Hai <1975, >
Pubbl/distr/stampa Boca Raton, Fla. : , : CRC Press, , 2012
Descrizione fisica 1 online resource (200 p.)
Disciplina 004.568
621.39732
Altri autori (Persone) ChenYiran <1976->
Soggetto topico Semiconductor storage devices
Magnetic memory (Computers)
Flash memories (Computers)
Change of state (Physics) - Industrial applications
ISBN 1-315-21830-5
1-351-83419-3
1-280-12159-9
9786613525451
1-4398-0746-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto 1. Introduction to semiconductor memories -- 2. Phase change memory -- 3. Spin-transfer torque RAM -- 4. Resistive random access memory -- 5. Memristors -- 6. The future of nonvolatile memory.
Record Nr. UNINA-9910781525203321
Li Hai <1975, >  
Boca Raton, Fla. : , : CRC Press, , 2012
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