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Liquid phase epitaxy of electronic, optical, and optoelectronic materials [[electronic resource] /] / edited by Peter Capper, Michael Mauk
| Liquid phase epitaxy of electronic, optical, and optoelectronic materials [[electronic resource] /] / edited by Peter Capper, Michael Mauk |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 |
| Descrizione fisica | 1 online resource (465 p.) |
| Disciplina |
537.622
621.3815/2 621.38152 |
| Altri autori (Persone) |
CapperPeter
MaukMichael |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Electronics - Materials
Optical materials Optoelectronic devices - Materials Semiconductors Liquid phase epitaxy Crystal growth |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-03220-4
9786611032203 0-470-31950-X 0-470-31949-6 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials; Contents; Series Preface; Preface; Acknowledgements; List of Contributors; 1 Introduction to Liquid Phase Epitaxy; 1.1 General aspects of liquid phase epitaxy; 1.2 Epitaxial growth modes, growth mechanisms and layer thicknesses; 1.3 The substrate problem; 1.4 Conclusions; Acknowledgements; References; 2 Liquid Phase Epitaxy in Russia Prior to 1990; 2.1 Introduction; 2.2 Specific features of growth of quantum-well heterostructures by LPE; 2.2.1 LPE growth from a capillary; 2.2.2 Low-temperature LPE
2.2.3 LPE growth of InGaAsP quantum well heterostructures2.3 Rare-earth elements in LPE technology of some III-V binary compounds and solid solutions; 2.4 Conclusions; Acknowledgements; References; 3 Phase Diagrams and Modeling in Liquid Phase Epitaxy; 3.1 Introduction; 3.2 Equilibrium phase diagrams; 3.2.1 Binary, ternary and quaternary phase diagrams; 3.2.2 Calculation of binary, ternary and quaternary phase diagrams; 3.2.3 Calculation of phase diagrams considering the surface, interface and strain energies; 3.2.4 Experimental determination of phase diagrams; 3.2.5 Miscibility gap 3.3 Technologies of LPE growth3.4 III-V materials for LPE growth; 3.5 Lattice matching; 3.6 Growth of misfit-dislocation-free wafers; 3.7 Phase diagrams of growth mode; 3.8 Growth kinetics; 3.8.1 Calculation of III-V layer thickness; 3.8.2 Compositional variation in III-V ternary layers; 3.9 Summary; References; Appendix; 4 Equipment and Instrumentation for Liquid Phase Epitaxy; 4.1 Introduction; 4.2 Overview, general description and operation of horizontal slideboat LPE system; 4.3 Crucibles and slideboats; 4.4 Alternative slideboat designs; 4.5 Furnaces and heating; 4.6 LPE ambient 4.7 Tubes, sealing and gas handling4.8 Controllers and heating; 4.9 Temperature measurements and other instrumentation; 4.10 Safety; 4.11 Production LPE systems; References; 5 Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy; 5.1 Introduction and scope of review; 5.2 Historical perspective; 5.3 Basis of silicon and germanium LPE; 5.3.1 Nucleation of silicon from a molten metal solution; 5.4 Silicon LPE methods; 5.4.1 Steady-state methods of solution growth and LPE; 5.5 Solvent selection; 5.6 Low-temperature silicon LPE 5.7 Purification of silicon for solar cells in an LPE process5.8 Electrical properties of LPE-grown silicon; 5.9 LPE of Si- and Ge-based alloys; 5.10 Selective LPE and liquid phase ELO; 5.11 Solar cells; 5.11.1 Epitaxial silicon solar cells by LPE; 5.11.2 Si solution growth on nonsilicon substrates for solar cells; 5.12 Other applications of silicon and germanium LPE; 5.13 Conclusions and outlook; References; Appendix 1. Phase equilibria modeling: The silicon-metal liquidus; A1.1 The silicon-metal binary liquidus; A1.2 Alloy solvents; Appendix 2. Impurities and doping in silicon LPE Appendix 3. Effects of oxygen and water vapor in Si LPE |
| Record Nr. | UNINA-9910144593503321 |
| Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Liquid phase epitaxy of electronic, optical, and optoelectronic materials [[electronic resource] /] / edited by Peter Capper, Michael Mauk
| Liquid phase epitaxy of electronic, optical, and optoelectronic materials [[electronic resource] /] / edited by Peter Capper, Michael Mauk |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 |
| Descrizione fisica | 1 online resource (465 p.) |
| Disciplina |
537.622
621.3815/2 621.38152 |
| Altri autori (Persone) |
CapperPeter
MaukMichael |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Electronics - Materials
Optical materials Optoelectronic devices - Materials Semiconductors Liquid phase epitaxy Crystal growth |
| ISBN |
1-281-03220-4
9786611032203 0-470-31950-X 0-470-31949-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials; Contents; Series Preface; Preface; Acknowledgements; List of Contributors; 1 Introduction to Liquid Phase Epitaxy; 1.1 General aspects of liquid phase epitaxy; 1.2 Epitaxial growth modes, growth mechanisms and layer thicknesses; 1.3 The substrate problem; 1.4 Conclusions; Acknowledgements; References; 2 Liquid Phase Epitaxy in Russia Prior to 1990; 2.1 Introduction; 2.2 Specific features of growth of quantum-well heterostructures by LPE; 2.2.1 LPE growth from a capillary; 2.2.2 Low-temperature LPE
2.2.3 LPE growth of InGaAsP quantum well heterostructures2.3 Rare-earth elements in LPE technology of some III-V binary compounds and solid solutions; 2.4 Conclusions; Acknowledgements; References; 3 Phase Diagrams and Modeling in Liquid Phase Epitaxy; 3.1 Introduction; 3.2 Equilibrium phase diagrams; 3.2.1 Binary, ternary and quaternary phase diagrams; 3.2.2 Calculation of binary, ternary and quaternary phase diagrams; 3.2.3 Calculation of phase diagrams considering the surface, interface and strain energies; 3.2.4 Experimental determination of phase diagrams; 3.2.5 Miscibility gap 3.3 Technologies of LPE growth3.4 III-V materials for LPE growth; 3.5 Lattice matching; 3.6 Growth of misfit-dislocation-free wafers; 3.7 Phase diagrams of growth mode; 3.8 Growth kinetics; 3.8.1 Calculation of III-V layer thickness; 3.8.2 Compositional variation in III-V ternary layers; 3.9 Summary; References; Appendix; 4 Equipment and Instrumentation for Liquid Phase Epitaxy; 4.1 Introduction; 4.2 Overview, general description and operation of horizontal slideboat LPE system; 4.3 Crucibles and slideboats; 4.4 Alternative slideboat designs; 4.5 Furnaces and heating; 4.6 LPE ambient 4.7 Tubes, sealing and gas handling4.8 Controllers and heating; 4.9 Temperature measurements and other instrumentation; 4.10 Safety; 4.11 Production LPE systems; References; 5 Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy; 5.1 Introduction and scope of review; 5.2 Historical perspective; 5.3 Basis of silicon and germanium LPE; 5.3.1 Nucleation of silicon from a molten metal solution; 5.4 Silicon LPE methods; 5.4.1 Steady-state methods of solution growth and LPE; 5.5 Solvent selection; 5.6 Low-temperature silicon LPE 5.7 Purification of silicon for solar cells in an LPE process5.8 Electrical properties of LPE-grown silicon; 5.9 LPE of Si- and Ge-based alloys; 5.10 Selective LPE and liquid phase ELO; 5.11 Solar cells; 5.11.1 Epitaxial silicon solar cells by LPE; 5.11.2 Si solution growth on nonsilicon substrates for solar cells; 5.12 Other applications of silicon and germanium LPE; 5.13 Conclusions and outlook; References; Appendix 1. Phase equilibria modeling: The silicon-metal liquidus; A1.1 The silicon-metal binary liquidus; A1.2 Alloy solvents; Appendix 2. Impurities and doping in silicon LPE Appendix 3. Effects of oxygen and water vapor in Si LPE |
| Record Nr. | UNINA-9910830383003321 |
| Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Liquid phase epitaxy of electronic, optical, and optoelectronic materials / / edited by Peter Capper, Michael Mauk
| Liquid phase epitaxy of electronic, optical, and optoelectronic materials / / edited by Peter Capper, Michael Mauk |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 |
| Descrizione fisica | 1 online resource (465 p.) |
| Disciplina | 621.3815/2 |
| Altri autori (Persone) |
CapperPeter
MaukMichael |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Electronics - Materials
Optical materials Optoelectronic devices - Materials Semiconductors Liquid phase epitaxy Crystal growth |
| ISBN |
9786611032203
9781281032201 1281032204 9780470319505 047031950X 9780470319499 0470319496 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials; Contents; Series Preface; Preface; Acknowledgements; List of Contributors; 1 Introduction to Liquid Phase Epitaxy; 1.1 General aspects of liquid phase epitaxy; 1.2 Epitaxial growth modes, growth mechanisms and layer thicknesses; 1.3 The substrate problem; 1.4 Conclusions; Acknowledgements; References; 2 Liquid Phase Epitaxy in Russia Prior to 1990; 2.1 Introduction; 2.2 Specific features of growth of quantum-well heterostructures by LPE; 2.2.1 LPE growth from a capillary; 2.2.2 Low-temperature LPE
2.2.3 LPE growth of InGaAsP quantum well heterostructures2.3 Rare-earth elements in LPE technology of some III-V binary compounds and solid solutions; 2.4 Conclusions; Acknowledgements; References; 3 Phase Diagrams and Modeling in Liquid Phase Epitaxy; 3.1 Introduction; 3.2 Equilibrium phase diagrams; 3.2.1 Binary, ternary and quaternary phase diagrams; 3.2.2 Calculation of binary, ternary and quaternary phase diagrams; 3.2.3 Calculation of phase diagrams considering the surface, interface and strain energies; 3.2.4 Experimental determination of phase diagrams; 3.2.5 Miscibility gap 3.3 Technologies of LPE growth3.4 III-V materials for LPE growth; 3.5 Lattice matching; 3.6 Growth of misfit-dislocation-free wafers; 3.7 Phase diagrams of growth mode; 3.8 Growth kinetics; 3.8.1 Calculation of III-V layer thickness; 3.8.2 Compositional variation in III-V ternary layers; 3.9 Summary; References; Appendix; 4 Equipment and Instrumentation for Liquid Phase Epitaxy; 4.1 Introduction; 4.2 Overview, general description and operation of horizontal slideboat LPE system; 4.3 Crucibles and slideboats; 4.4 Alternative slideboat designs; 4.5 Furnaces and heating; 4.6 LPE ambient 4.7 Tubes, sealing and gas handling4.8 Controllers and heating; 4.9 Temperature measurements and other instrumentation; 4.10 Safety; 4.11 Production LPE systems; References; 5 Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy; 5.1 Introduction and scope of review; 5.2 Historical perspective; 5.3 Basis of silicon and germanium LPE; 5.3.1 Nucleation of silicon from a molten metal solution; 5.4 Silicon LPE methods; 5.4.1 Steady-state methods of solution growth and LPE; 5.5 Solvent selection; 5.6 Low-temperature silicon LPE 5.7 Purification of silicon for solar cells in an LPE process5.8 Electrical properties of LPE-grown silicon; 5.9 LPE of Si- and Ge-based alloys; 5.10 Selective LPE and liquid phase ELO; 5.11 Solar cells; 5.11.1 Epitaxial silicon solar cells by LPE; 5.11.2 Si solution growth on nonsilicon substrates for solar cells; 5.12 Other applications of silicon and germanium LPE; 5.13 Conclusions and outlook; References; Appendix 1. Phase equilibria modeling: The silicon-metal liquidus; A1.1 The silicon-metal binary liquidus; A1.2 Alloy solvents; Appendix 2. Impurities and doping in silicon LPE Appendix 3. Effects of oxygen and water vapor in Si LPE |
| Record Nr. | UNINA-9911019486503321 |
| Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Low-cost engineering of laser rods and slabs with liquid phase epitaxy [[electronic resource] /] / Jeffrey O. White and Carl E. Mungan
| Low-cost engineering of laser rods and slabs with liquid phase epitaxy [[electronic resource] /] / Jeffrey O. White and Carl E. Mungan |
| Autore | White Jeffrey O (Jeffrey Owen) |
| Pubbl/distr/stampa | Adelphi, MD : , : Army Research Laboratory, , [2011] |
| Descrizione fisica | 1 online resource (vi, 16 pages) : illustrations (some color) |
| Altri autori (Persone) | MunganCarl E |
| Collana | ARL-TR |
| Soggetto topico |
Lasers - Design and construction
Liquid phase epitaxy |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910701279403321 |
White Jeffrey O (Jeffrey Owen)
|
||
| Adelphi, MD : , : Army Research Laboratory, , [2011] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
